Semiconductor laser array
专利汇可以提供Semiconductor laser array专利检索，专利查询，专利分析的服务。并且PURPOSE:To reduce man-hours on manufacture, and to obtain a semiconductor laser array, which has high yield on the manufacture of an element and enables single wavelength oscillation, by forming a line tying the apices of the periodic structure of diffraction gratings in each stripe in one part of a curve. CONSTITUTION:Diffraction gratings 100 consisting of the circular arcs of concentric circles having a 4,000Angstrom period and a 18mm. radius are formed on an N-InP substrate 1, and buried crystal growth functioning as the formation of parallel grooves and the formation of current confinement structure in combination is conducted to a double hetero-junction wafer in which an N-InGaAsP optical waveguide layer 2 having a 1.15mum compositional wavelength, an InGaAsP active layer 3 having a 1.30mum compositional wavelength and a P-InP clad layer 4 are shaped through a liquid phase growth method, thus manufacturing semiconductor lasers 11, 12, 13. Accordingly, a semiconductor laser array, wavelengths thereof differ little by little through the formation of the diffraction gratings only by one-time process, can be integrated.，下面是Semiconductor laser array专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
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| 基于光量子技术的高灵敏度光纤光栅传感方法及系统 | 2020-05-12 | 245 |
| 光模块 | 2020-05-12 | 465 |
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