MEMORY CELLS, METHODS OF FABRICATION, SEMICONDUCTOR DEVICES, MEMORY SYSTEMS, AND ELECTRONIC SYSTEMS
专利汇可以提供MEMORY CELLS, METHODS OF FABRICATION, SEMICONDUCTOR DEVICES, MEMORY SYSTEMS, AND ELECTRONIC SYSTEMS专利检索，专利查询，专利分析的服务。并且A magnetic cell includes a free region between an intermediate oxide region (e.g., a tunnel barrier) and a secondary oxide region. Both oxide regions may be configured to induce magnetic anisotropy ("MA") with the free region, enhancing the MA strength of the free region. A getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the secondary oxide region to reduce an oxygen concentration and, thus, an electrical resistance of the secondary oxide region. Thus, the secondary oxide region contributes only minimally to the electrical resistance of the cell core. Embodiments of the present disclosure therefore enable a high effective magnetoresistance, low resistance area product, and low programming voltage along with the enhanced MA strength. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.，下面是MEMORY CELLS, METHODS OF FABRICATION, SEMICONDUCTOR DEVICES, MEMORY SYSTEMS, AND ELECTRONIC SYSTEMS专利的具体信息内容。
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2 重合复合内饰零件
