Production of photo exposure mask
专利汇可以提供Production of photo exposure mask专利检索，专利查询，专利分析的服务。并且PURPOSE: To produce an optical mask having fine positive type patterns by making combination use of electron beam exposure techniques capable of making fine working and dry etching of good selectivity.
CONSTITUTION: A Si light shield film 4 of a sufficient thickness is provided on a glass substrate 5, and positive type resist PBS of a high rate of dry etching but of a high resolving power is spin-coated thereon and is then baked. Desired positive type patterns 1 are created by performing exposure and development. Next, the surface is covered with optical resist 3 of a rate of dry etching smaller than that of PBS, then serrations are greater at the pattern edge. Next, the surface is sputter etched by CF
4 . If OMR-83 is used for the resist 3, the OMR-83 of the surface is first etched because its rate of etching is 1/15 that of PBS. When PBS exposues, PBS is etched extremely fast and the remained patterns become the negative patterns of OMR-83. When etching is done further, desired fine positive patterns of the film 4 may be readily formed.
COPYRIGHT: (C)1979,JPO&Japio，下面是Production of photo exposure mask专利的具体信息内容。
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