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Piezoelectric resonators and method of tuning the same

阅读:860发布:2023-04-13

专利汇可以提供Piezoelectric resonators and method of tuning the same专利检索,专利查询,专利分析的服务。并且There is disclosed a high frequency piezoelectric resonator having an electroded region and a surrounding nonelectroded region, said resonator having means for suppressing spurious responses comprising a layer of nonabsorbent, insulating and high Q material, said layer being deposited on said nonelectroded region in a collarlike configuration. Also, said layer has been shown to serve as an effective means for fine-tuning piezoelectric resonators.,下面是Piezoelectric resonators and method of tuning the same专利的具体信息内容。

  • 2. A high frequency piezoelectric resonator as described in claim 1 wherein said layer comprises a vapor-deposited member of the group consisting essentially of silicon monoxide, silicon dioxide, and silicon sesquioxide.
  • 3. In a high frequency piezoelectric resonator comprising an electroded region having a frequency fa and a nonelectroded region having a frequency fb, said frequencies fa and fb being in the range of 0.80000 to 0.99999, a means foR suppressing spurious responses comprising in combination to a collarlike layer of high Q, nonabsorbent and insulating material, being deposited on at least a portion of said nonelectroded region, and substantially surrounding said electroded region.
  • 4. A high frequency piezoelectric resonator comprising a quartz wafer having an electroded region having a resonant frequency fa and a nonelectroded region having a frequency fb, said frequencies fa and fb being related whereby fa/fb being in the range of 0.80000 to 0.99999, and an elevated collarlike edge region tapering upwardly from said nonelectroded region to effectively suppress spurious responses of the resonator.
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