Semiconductor junction capacitor
专利汇可以提供Semiconductor junction capacitor专利检索，专利查询，专利分析的服务。并且PURPOSE:To improve the withstand voltage of a junction capacity by forming a deep base region in an epitaxial layer grown on a semiconductor substrate and a shallow emitter region diposed within the base region, producing the end of a p-n junction at deep position from the surface of the epitaxial layer, and forming a base pickup region at the base region end. CONSTITUTION:An n type buried region is diffused in a p type Si substrate, an n type layer 1 is epitaxially grown in the entire surface including the buried region, the layer 1 is surrounded by a p type rgion reaching the substrate, and the layer 1 is divided into insular state including the buried region. A deep p type base region 2 is diffused in the layer 1 becoming insular state, a shallow n type emitter region 3 is formed therein, and a p type base pickup region 6 is formed at the end of the p-n junction produced thereby. Thereafter, an insulating film is coated on the entire surface, a window is opened thereat, and electrodes 4, 7 are mounted at the regions 3, 6 respectively. Thus, one end B of the p-n junction produced with the regions 2, 3 is disposed deeply in the layer 1, thereby increasing the withstand voltage of the junction capacity.，下面是Semiconductor junction capacitor专利的具体信息内容。
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