Manufacture of composite resonator type semiconductor laser device
专利汇可以提供Manufacture of composite resonator type semiconductor laser device专利检索，专利查询，专利分析的服务。并且PURPOSE: To enable the title laser device to be easily produced with high precision by means of crystal growth on a flat surface without utilizing cleavage, by constructing at least a part of an optical waveguide in a superlattice structure or quantum well structure, converting a part of this superlattice structure or quantum well structure into mix crystal, and forming two or more laser sections having different resonator lengths.
CONSTITUTION: A second clad layer of P-type AlGaAs 6 and an active layer 9 of a multiple quantum well structure are produced successively on a P-type GaAs substrate 7 by the molecular beam epitaxy. A masking material of silicon nitride is provided thereon and a part of the mask 11 is removed by etching to make a mask pattern. The substrate with the mask pattern is encapsulated together with ZnAs
2 and annealed at a temperature of several hundred degrees so as to diffuse Zn in the portion not covered with the mask. Thus, the diffused portion penetrates the multiple quantum well structure to convert it into mix crystal. The mask 11 is then removed and a first clad layer of N-type AlGaAs 4 and an N-type GaAs cap layer 3 are successively produced on the flat surface of the active layer 9 by the molecular beam epitaxy. Current stopping layers 2 of SiO
2 are provided transversely at both ends by the CVD process, and a first electrode 1 and a second electrode 8 are vapor-deposited.
COPYRIGHT: (C)1986,JPO&Japio，下面是Manufacture of composite resonator type semiconductor laser device专利的具体信息内容。
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