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MULTI-STAGE MEMORY SENSING
申请号	US15957742	申请日	2018-04-19	公开(公告)号	US20180308538A1	公开(公告)日	2018-10-25
申请人	Micron Technology, Inc.;			发明人	Huy T. Vo; Adam S. El-Mansouri;
摘要	Methods and devices for reading a memory cell using multi-stage memory sensing are described. The memory cell may be coupled to a digit line after the digit line during a read operation. A transistor may be activated to couple an amplifier capacitor with the digit line during the read operation. The transistor may be deactivated for a portion of the read operation to isolate the amplifier capacitor from the digit line while the memory cell is coupled to the digit line. The transistor may be reactivated to recouple the amplifier capacitor to the digit line to help determine the value of the memory cell.
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