最新美国发明专利第2014-09-16期 - 专利汇|PatentHub专利检索|专利查询网|发明专利查询分析

Document	Document Title
US08836455B2	Soft-collision electromagnetic driving mechanism A soft-collision electromagnetic driving mechanism comprises a movable shaft driven by an electromagnetic mechanism, wherein the movable shaft is fixed to a movable iron core, an upper part of the movable shaft is connected to a movable damping mechanism, the movable damping mechanism comprises a first cylinder, the first cylinder has a movable damping piston therein, the movable damping piston is formed by a damping piston head and damping piston rods disposed at two sides of the damping piston head, first and second sealing chambers are at the two sides of the damping piston head respectively, a damping liquid is filled in the first and second sealing chambers, and a two-way discharge channel is arranged between the first and second sealing chambers. The driving mechanism is a permanent magnetic linear driving mechanism having a simple structure, a strong driving force and smooth contact, which can be used to drive electrical switches or devices requiring smooth contact, strong driving force and high speed.
US08836454B2	Miniature magnetic switch structures A switching device structure comprising a top magnet, a bottom magnet, and a movable member disposed between the top and bottom magnets, the movable member having an electromagnet positioned thereon, the electromagnet comprising a plurality of laminated layers, the layers including a layer bearing an iron core and a number of armature layers which establish electrical conductor windings around the iron core.
US08836453B2	Electronic circuit breaker, electronic circuit breaker subassembly, circuit breaker secondary electrical contact assembly, and powering methods Embodiments provide an electronic circuit breaker subassembly and circuit breaker secondary electrical contact assembly. The circuit breaker secondary electrical contact assembly has a main contact terminal connectable to a main power terminal, a secondary electrical contact set having a stationary secondary electrical contact and a moveable secondary electrical contact, a lockout conductor provided in spring-engaged contact with the main contact terminal on a first end and including one of the stationary or moving secondary electrical contacts on a second end, and a spring having the moveable secondary electrical contact provided on a moveable portion. Circuit breakers and methods of operating the electronic circuit breaker are provided, as are other aspects.
US08836450B2	Adjustable resonator filter An adjustable resonator filter comprised of cavity resonators. There is a movable conductive tuning element in the filter for adjusting each electromagnetic coupling, which element is located outside the resonator cavities. When the coupling between two resonators is the case, the movement of the tuning element changes the coupling between the signal ground and a fixed coupling element which extends from a resonator cavity to the next cavity, whereupon the strength of the coupling between the resonators changes. When the coupling between a resonator and the input/output line of the filter is the case, by means of the tuning element it is implemented a section with a low impedance inside a range with a relatively high impedance on the transmission path. This section moves together with the tuning element, in which case the strength of the coupling between the resonator and the line changes.
US08836449B2	Vertically integrated module in a wafer level package In one aspect of the present invention, an integrated wafer level package includes a first wafer and a second wafer spaced apart to define a first gap therebetween, a first bulk acoustic wave (BAW) filter disposed on the first wafer and a second BAW filter disposed on the second wafer, where the second BAW filter faces directly the first BAW filter to define a second gap therebetween, a seal ring disposed between the first wafer and the second wafer in the first gap such that a seal is formed surrounding the first BAW filter and the second BAW filter and defining a cavity between the seal ring and the first BAW filter and the second BAW filter, and at least one external contact accessible externally to the wafer level package and electrically coupled to at least one of the first BAW filter and the second BAW filter.
US08836448B2	Magnetic interface circuit A noise filtering magnetic interface circuit used for an electrical connector is provided. The magnetic interface circuit includes a number of signal channels and a capacitor (40). Each channel has a transformer (10) and a 3-wire common mode choke (20). The transformer has a first winding (100) connected and a second winding (110), the first winding having two opposite outputs, the second winding having two outputs and a center tap (111). The 3-wire common mode choke has a center winding (220) and two outer windings (210, 230), the center winding having a first output connected to the center tap of the second winding and a second output opposite to the first output, the two outer windings being respectively connected to the two outputs of the second winding. The capacitor has a first pole connected to the second outputs of the center windings of the channels and an opposite second pole connected to a ground.
US08836441B2	Surface mount piezoelectric oscillator A surface mount piezoelectric oscillator includes a piezoelectric resonator with a container main body, a plurality of external terminals, a mounting board with an IC chip, a plurality of connecting terminals, and a solder ball. The solder ball bonds the plurality of external terminals and the plurality of connecting terminals by melting and hardening. The solder bonding portion has approximately a circular shape with approximately a same size as a size of the connecting terminal of the mounting board. The solder ball placed on the connecting terminal of the mounting board is melted, self-aligned, and hardened so as to form a solder fillet of nearly axial symmetry. The solder fillet bridges between the both electrodes and bonds the connecting terminal of the mounting board and the solder bonding portion of the external terminal of the piezoelectric resonator.
US08836440B2	Electromechanical oscillators, parametric oscillators, and torsional resonators based on piezoresistive nanowires Doubly-clamped nanowire electromechanical resonators that can be used to generate parametric oscillations and feedback self-sustained oscillations. The nanowire electromechanical resonators can be made using conventional NEMS and CMOS fabrication methods. In very thin nanowire structures (sub-micron-meter in width), additive piezoresistance patterning and fabrication can be highly difficult and thus need to be avoided. This invention shows that, in piezoresistive nanowires with homogeneous material composition and symmetric structures, no conventional and additive piezoresistance loops are needed. Using AC and DC drive signals, and bias signals of controlled frequency and amplitude, output signals having a variety of frequencies can be obtained. Various examples of such resonators and their theory of operation are described.
US08836432B2	Amplifier An amplifier includes an amplifying element that amplifies an input signal; an output terminal that outputs the signal amplified by the amplifying element; a matching circuit disposed in series between the amplifying element and the output terminal, and performing impedance matching; an impedance converter disposed in series between the amplifying element and the matching circuit or between the matching circuit and the output terminal; and a first resonator and a second resonator connected at the ends of the impedance converter.
US08836431B2	High-efficiency power amplifier with multiple power modes In a representative embodiment, a multiple mode power amplifier that is operable in a first power mode and a second power mode. The multiple mode power amplifier comprises a first amplifying unit; a second amplifying unit; a first impedance matching network connected to an output port of the first amplifying unit; a second impedance matching network connected to an output port of the second amplifying unit and to the first impedance matching network; and a third impedance matching network connected to the output ports of the first and the second amplifying units. The third impedance matching network reduces a phase difference between signals amplified by the first and the second amplifying units in the first mode.
US08836429B2	CMOS integrated circuit and amplifying circuit There is provided a CMOS integrated circuit capable of avoiding deterioration of NF characteristic and achieving a high degree of linearity in the case in which an LNA circuit is formed on an SOI substrate and an LAN circuit is formed in a bulk CMOS process. The CMOS integrated circuit includes a field effect transistor having a gate electrode connected to a signal input terminal, a drain electrode connected to a power terminal, and a source electrode connected to a ground terminal, wherein the field effect transistor is formed on the SOI substrate and a connection between a body potential and a potential lower than a source potential are formed by a resistor element. The deterioration of NF characteristic can be avoided and a high degree of linearity can be achieved by using this CMOS integrated circuit.
US08836423B2	Method and apparatus for automatically adjusting the bandwidth of an electronic amplifier A method and apparatus are provided for using an automatic BW adjustment circuit to automatically adjust the bandwidth of an electronic amplifier based on the amplitude of a signal that is output from a variable gain amplifier or of one or more variable gain stages that follow the amplifier. By automatically adjusting the bandwidth of the electronic amplifier based on the amplitude of the signal, bandwidth enhancement can be provided while also preventing, or at least reducing, peaking of the frequency response of the electronic amplifier.
US08836418B2	High frequency semiconductor switch A switch circuit, a control circuit, a grounding wire and a control wire are formed on a substrate. The switch circuit connects an antenna terminal with one of multiple high frequency terminals. The control circuit outputs a control signal to the switch circuit. The grounding wire is disposed between the switch circuit and the control circuit and extends from a location proximate to an edge of the substrate to a location proximate to an opposite edge of the substrate. The control wire that carries the control signal is disposed between one end of the grounding wire and an edge of the semiconductor substrate.
US08836413B2	Low-power resistor-less voltage reference circuit A method for generating a reference voltage includes generating a proportional-to-absolute temperature (PTAT) voltage across a first pseudo resistor. The first pseudo resistor includes a transistor. The method also includes converting the PTAT voltage to a current based on a resistance of the first pseudo resistor. The method also includes mirroring the current using a current mirror circuit and converting the mirrored current to a converted PTAT voltage using a second pseudo resistor. The second pseudo resistor includes a transistor. The first pseudo resistor and the second pseudo resistor include equal transistor types. The method also includes generating a complementary-to-absolute temperature (CTAT) voltage, and summing the converted PTAT voltage and the CTAT voltage to produce the reference voltage. The resulting reference voltage is temperature independent.
US08836408B1	High-speed switch with signal-follower control offsetting effective visible-impedance loading A data link circuit switches high-speed signals through FET-based circuitry between channels. A FET responds to control signals at the gate terminal to operate in either a signal-passing mode or another (blocking) mode. In the passing mode, an AC (high-speed) signal is passed between the S-D terminals by coupling a first signal portion (of the AC signal) and with another signal portion diverted by the inherent capacitances associated with the FET. For offsetting the loading caused by the inherent capacitances associated with the FET-based switch, a biasing circuit is configured and arranged to bias the back-gate terminal of the FET transistor with a follower signal.
US08836407B1	Gilbert mixer with negative gm to increase NMOS mixer conversion A cross coupled NMOS transistors providing a negative gm transistor feedback allows a mixer to saturate at a reduced input signal swing voltage when compared to a conventional mixer allowing the mixer to enter into the current mode operation at a reduced signal input voltage range. The linearity of the baseband signal path can be traded against the mixer gain and is improved if the signal swing in the baseband signal path is reduced. The input mixer transistors operate in the saturated mode at a reduced input signal swing voltage causing the power efficiency of the system to increase since the transmit chain operates at a class-D power efficient. Efficiency is very important in mobile applications to save and extend the battery power of a mobile phone providing a better utilization of the available power since most of that power is supplied to the energy of the outgoing modulated signal.
US08836406B2	Voltage level shifter A level shifter includes a latch supplied at a first voltage VDD1. First and second switches are connected in series with first and second latches and are cross-coupled to maintain the state of the latches during a stability period. A controller responds to a change of state of an input signal at a voltage different from the first voltage at an end of the stability period to deactivate both the first and second switches, to cause third and fourth switches to deactivate both the first and second latches during a transition period, and subsequently to change the state of the latch and maintain the changed state during the subsequent stability period. This avoids undesirable compromise between current consumption and transfer delay, as in a conventional level shifter.
US08836403B2	Programmable clock driver A clock driver circuit supplies a clock signal with a drive strength determined according to one or more control signals supplied to the clock driver that vary during run-time. The clock driver is operated with a first drive strength in a non-resonant mode of operation of an associated clock network and with a second drive strength in a resonant mode of operation of the associated clock network, the first drive strength being higher than the second drive strength.
US08836399B2	Positive edge flip-flop with dual-port slave latch In an embodiment of the invention, a flip-flop circuit contains a 2-input multiplexer, a master latch, a transfer gate and a slave latch. The scan enable control signals SE and SEN of the multiplexer determine whether data or scan data is input to the master latch. The clock signals CLK and CLKN and retention control signals RET and RETN determine when the master latch is latched. The slave latch is configured to receive the output of the master latch, a second data bit D2, the clock signals CLK and CLN, the retain control signals RET and RETN, the slave control signals SS and SSN. The signals CLK, CLKN, RET, RETN, SS and SSN determine whether the output of the master latch or the second data bit D2 is latched in the slave latch. Control signals RET and RETN determine when data is stored in the slave latch during retention mode.
US08836397B2	Duty cycle ratio correction circuit A duty ratio correction circuit includes a duty cycle ratio controlling unit configured to generate an internal clock signal having a duty cycle ratio defined according to a first reference clock signal and a reset signal and a reset signal generating unit configured to generate the reset signal in response to a second reference clock signal and the internal clock signal fed back thereto.
US08836396B2	PWM duty cycle synthesizer and method with adjustable corner frequency A circuit is provided that includes summing circuit for comparing the PWM output signal to the PWM input signal and producing an increment signal if a value of the PWM input signal exceeds a corresponding value of the PWM output signal and producing a decrement signal if a value of the PWM input signal is less than a corresponding value of the PWM output signal. An integrator produces a duty cycle signal by producing an increase in value of the duty cycle signal in response to each increment signal and a decrease in value of the duty cycle signal in response to each decrement signal. A PWM generator produces the PWM output signal in response to the duty cycle signal to cause the duty cycle of the PWM output signal to equal the duty cycle of the PWM input signal with no loss of duty cycle resolution.
US08836392B2	Digital locked loop for producing a clock having a selected frequency ratio relative to a clock produced by a MEMS-based oscillator A Micro Electrical Mechanical System (MEMS) oscillator supplies a MEMS clock signal to a digital locked loop that generates an output clock signal having a frequency that corresponds to a desired frequency ratio between the MEMS oscillator output signal and the digital locked loop output signal. The frequency ratio may be determined, at least in part, as a function of temperature.
US08836390B2	Phase-locked loops that share a loop filter and frequency divider An integrated circuit die stack includes a first die having a first phase locked loop (PLL) and a second die having a second PLL. The first PLL includes a first voltage controlled oscillator (VCO) and the second PLL includes a second VCO. The first VCCO and the second VCCO share a frequency divider and a loop filter.
US08836388B2	Smart card clock generator circuits wth autonomous operation capability and method of operating the same An apparatus includes a reference clock signal generator circuit configured to generate a reference clock signal in response to a carrier signal and a clock selection signal generator circuit configured to generate a clock selection signal in response to the carrier signal. The apparatus further includes a multiplexer (MUX) circuit configured to selectively output the reference clock signal and a PLL output clock signal in response to the clock selection signal and a phase-locked loop (PLL) circuit configured to receive the selectively output signal between the reference clock signal and the PLL output clock signal at a reference input thereof and to generate the PLL output clock signal therefrom. An ISO 14443 type A smart card may include such apparatus.
US08836387B1	Methods and systems for reducing jitter Methods and systems for compensating reducing jitter produced by a phase-locked loop are disclosed. For example, in a particular embodiment, a phase-locked loop device for reducing jitter may include a voltage-control oscillator (VCO) signal configured to produce a VCO signal, phase-detection circuitry configured to compare an input signal and the VCO signal to produce a phase error signal, and slew-rate limiting circuitry configured to receive the phase error signal and apply a slew-rate limit process on the phase error signal to produce a modified error signal.
US08836383B2	Multipurpose half bridge signal output circuit The present invention discloses a multipurpose half bridge signal output circuit. The multipurpose half bridge signal output circuit is capable of selectively operating under a charge sharing mode or a gate pulsing modulation mode. The multipurpose half bridge signal output circuit includes: a first output pin; a second output pin; a first circuit zone having a first common end coupled to the first output pin; and a second circuit zone having a second common end coupled to the second output pin.
US08836382B1	Mixed voltage driving circuit A driving circuit is provided. The driving circuit has: a level shifter configured to receive a reference voltage and an input signal at a first voltage to generate a second voltage; an differential amplifier, coupled to the level shifter, configured to receive the second voltage and an output signal to provide an operating voltage, wherein the differential amplifier is supplied by a first power source at a third voltage; and an output stage, coupled to the differential amplifier, configured to receive the input signal and the operating voltage for switching the output signal, wherein the first voltage is smaller than the third voltage, and the output signal has a fourth voltage between the first voltage and the third voltage.
US08836381B2	Pseudo-supply hybrid driver A hybrid output driver includes a voltage mode main driver having an adjustable differential output voltage swing, and a current mode emphasis driver. Differential output voltage swing is adjusted by controlling the resistance of a first adjustable resistor coupled to a first voltage supply terminal, and the resistance of a second adjustable resistor coupled to a second voltage supply terminal. Resistances of the first and second adjustable resistors are adjusted by modifying a number of resistors connected in parallel. A calibration process measures the actual resistance of a similar resistor, and uses this resistance measurement to determine the number of resistors to be connected in parallel to provide the desired resistance. The current mode emphasis driver sources/sinks currents to/from differential output terminals of the hybrid output driver in response to an emphasis signal. These currents are selected in view of the selected differential output voltage swing and selected emphasis level.
US08836377B1	Sampled reference supply voltage supervisor A power supervisor circuit is provided. The circuit includes a first sample circuit that periodically samples a first reference voltage derived from a high output rail of a voltage source and generates a first sampled output voltage. The circuit includes second sample circuit that periodically samples a second reference voltage associated with a low output rail of the voltage source and generates a second sampled output voltage. A voltage supervisor in the circuit generates a trip point signal when a combination of the first and second sampled output voltage crosses a predetermined threshold indicating that the voltage source output voltage has fallen below a desired output voltage.
US08836374B2	High performance pre-mixer buffer in wireless communications systems According to one embodiment, a high performance buffer for use in a communications system includes first and second differential blocks. Each of the first and second differential blocks comprise one or more driving transistors for generating a driving current for a load of the high performance buffer, and a feedback path for adjusting the operation of the one or more driving transistors. The feedback path includes a feedback transistor for receiving a common mode bias voltage, wherein the common mode bias voltage depends at least in part on a threshold voltage of the feedback transistor. The feedback path includes a programmable resistor and capacitor to reduce out of band loop gain and the noise. The high performance buffer is configured to achieve a high linearity, low output impedance, and low noise, and is suitable for use as a pre-mixer buffer in a wireless communications system.
US08836373B2	Phase difference quantization circuit, delay value control circuit thereof, and delay circuit A delay value control circuit of a phase difference quantization circuit, wherein the phase difference quantization circuit has first to Nth (N is an integer equal to or greater than 2) delay units with binary weights. The delay value control circuit includes a replica delay unit replicating an Ath (2≦A≦N) delay unit; and a delay control unit configured to compare a phase of a first output signal generated from delaying an input signal with an A−1th delay unit and a phase of a second output signal generated from delaying the input signal with the Ath delay unit and the replica delay unit and configured to control a delay value of the Ath delay unit using a comparison result.
US08836366B2	Method for testing integrated circuits with hysteresis A system and method for testing circuits. A generated input voltage waveform for a first phase of a test may use transitions with a voltage swing between expected low and high trigger points for an integrated circuit (IC) with hysteresis. A generated input voltage waveform for a second phase of the test may use transitions with a voltage swing between the expected low trigger point and a high sub-threshold value. The high sub-threshold value may be a tolerable voltage difference below the expected high trigger point. A generated input voltage waveform for a third phase of the test may use transitions with a voltage swing between the expected high trigger point and a low sub-threshold value. The low sub-threshold value may be a tolerable voltage difference above the expected low trigger point. The expected trigger points and sub-threshold values may be found from earlier characterization studies for the IC.
US08836365B2	Apparatus and method for testing electromigration in semiconductor devices An apparatus and method for testing electromigration in semiconductor devices includes providing an electromigration test structure, where the electromigration test structure includes a first metal line; a metal bridge operatively coupled to the first metal line; a second metal line operatively coupled to the metal bridge; a barrier layer surrounding the electromigration test structure; current contact pads; and voltage contact pads. The current contact pads are connected to a current source and the voltage contact pads are connected to a voltage source. The barrier layer is exposed to the elevated current density as current travels from the first metal line across the barrier layer through the metal bridge to the second metal line.
US08836362B2	Switch probe and device and system for substrate inspection A switch probe for use in a substrate inspection device to inspect a substrate includes a first tubular element, a first rod element partially accommodated in the first tubular element, and pressed into the first tubular element when the certain part is mounted for substrate inspection, a second tubular element fixed in the first tubular element, a second rod element partially accommodated in the second tubular element which is inside the first tubular element, and contacting with the first rod element when the first rod element is pressed into the first tubular element, and a fixing mechanism configured to temporarily fix the second rod element in a position so that the second rod element does not contact with the first rod element even when the first rod element is pressed into the first tubular element.
US08836361B2	Wiring board and probe card using the same A wiring board and a probe card using the wiring board which respond to a demand for improving electrical reliability.
US08836359B2	Capacitive input test method Method and system are provided for evaluating linearity of a capacitive-to-digital converter (CDC) of a capacitive sensor integrated circuit chip. The evaluating employs multiple test capacitors, which may be on-chip with the CDC, and includes: obtaining capacitance values for the multiple test capacitors and parasitic capacitances of a first input A and a second input B to the capacitive-to-digital converter; applying the multiple test capacitors in multiple permutations to the first input A and the second input B, and for each of at least some permutations, determining an error between an expected output of the CDC using the obtained capacitance values and an actual measured output of the CDC; and determining linearity error for the CDC using the determined errors for the permutations of applying the multiple test capacitors to the first input A and the second input B of the CDC.
US08836356B2	Vertical probe assembly with air channel A vertical probe assembly includes an upper die; a lower die; a plurality of probes, the probes including an electrically conductive material, wherein the probes extend from the upper die through the lower die; and an air channel located between the upper die and the lower die, such that airflow through the air channel passes through the plurality of probes.
US08836354B2	Apparatus for thermal testing of a printed circuit board An apparatus for thermal testing of a printed circuit board being electrically energized and being unpopulated or populated with electrical or electronic components is disclosed. The apparatus includes a device for pyrometrical scanning of surface temperatures, wherein the scanning device comprises a pyrometric sensor being movable for the purpose of scanning and being adjustable with respect to its distance from the printed circuit board. A method for operating such an apparatus is disclosed. The method includes adjusting the distance between the sensor and the printed circuit board during scanning.
US08836350B2	Capacitive touch sensing using an internal capacitor of an analog-to-digital converter (ADC) and a voltage reference An internal sampling capacitor of an analog-to-digital converter (ADC) in a digital device is charged to a reference voltage, then some of the voltage charge on the internal sampling capacitor is transferred to an external unknown capacitor through a low resistance switch internal to the digital device. After the charge transfer has stabilized, the voltage charge remaining on the internal sampling capacitor is measured. The difference between the known reference voltage and the voltage remaining on the internal sampling capacitor is used to determine the capacitance value of the external capacitor. Alternatively, the external capacitor may be charged to a reference voltage then the external capacitor is coupled to the internal sampling capacitor, e.g., having no charge or a known charge on it, and the resulting voltage charge on the internal sampling capacitor is measured and used for determining the capacitance value of the external capacitor.
US08836348B2	Electrostatic capacitance type physical quantity sensor and angular velocity sensor The present invention provides a high-accuracy electrostatic capacitance type physical quantity sensor and angular velocity sensor configured so as to be capable of suppressing noise derived from internal noise while maintaining resistance to externally-incoming noise. A detection element 10 has a movable mass 18 supported displaceably by a physical quantity given from the outside, and a detection electrode Ef. A shield wire 16 is disposed around wirings connected to the input of a capacitance detection circuit 30 and is connected to a dc potential of low impedance. A value Cin of an input capacitance relative to a fixed potential of low impedance at a portion at which the detection element 10 is connected with the capacitance detection circuit 30 is set to fall within a range of 1.5 pF
US08836347B2	Obscured feature detector with width indication A surface-conforming obscured feature detector includes a plurality of sensor plates, each having a capacitance that varies based on the dielectric constant of the materials that compose the surrounding objects and the proximity of those objects. A sensing circuit is coupled to the sensor plates 32 to measure the capacitances of the sensor plates. A controller is coupled to the sensing circuit to analyze the capacitances measured by the sensing circuit. One or a plurality of indicators are coupled to the controller, and are selectively activated to identify the location of an obscured feature behind a surface.
US08836344B2	Intrusion detection and tracking system In one aspect, a method to detect an object in an area includes forming a wireless network among a plurality of nodes, each of the nodes being configured to generate an electromagnetic field (EMF) in the area and determining changes in the EMF between two nodes based on: a first difference in received signal strength values between a previously determined received signal strength value and a currently determined received signal strength value, a second difference in received signal strength values between the currently determined received signal strength value and an average received signal strength value and a third difference in link quality values between a previously determined link quality value and a currently determined link quality value. The method further comprises detecting the object based on the changes in the EMF.
US08836341B2	Semiconductor circuit, semiconductor device, method of diagnosing abnormality of wire, and computer readable storage medium There is provided a semiconductor circuit including: a selection circuit, to which are connected batteries in series, and which selects any one of the batteries; a difference detecting circuit, to which voltage of a high potential side of the selected battery inputted, and to which voltage of a low potential side of the selected battery is inputted, and which outputs a difference between the voltage at the high-potential side and the voltage at the low-potential side; and a voltage applying unit that applies diagnostic voltage to a wire that is for inputting the high potential voltage to the difference detecting circuit when diagnosing an abnormality of a wire associated with the selected battery if the selected battery is a battery of a highest position in the series or a battery of a lowest position in the series.
US08836339B2	Switching device In a switching device with at least one first electrical switching device input and at least one first electrical switching device output and at least one second electrical switching device output, wherein in a first operating state of the switching device the first switching device input is electrically connected with the first switching device output, wherein in a second operating state of the switching device the first switching device input is electrically connected with the second switching device output, is proposed to configure the switching device for uninterrupted switchover from the first operating state to the second operating state and/or from the second operating state to the first operating state to allow functional testing of a fault current circuit breaker without interruption.
US08836338B2	Switching circuits and methods of testing thereof A switching circuit for connection to a load and to a voltage source is provided. The switching circuit includes at least one switching device for switching on and off power to the load. A pulldown device is provided for shorting out the load thereby isolating the load from the voltage source; and a controller operable while the load is shorted to activate at least one of the switching devices at a time. The current passes through the activated switching device and is measurable to test whether the activated switching device is operating correctly.
US08836325B2	Valve position sensor A valve position sensor of a sliding sleeve of a flow control valve comprising a sleeve displacement converting means for converting a sleeve displacement into a radial displacement, and a measuring means for detecting the radial displacement and correlating the radial displacement to the position of the sliding sleeve within the flow control valve.
US08836323B2	System and method for determining slue position A slue position sensing system and method of modifying a machine to include such a slue position sensing system are disclosed. The slue position sensing system may include a swing sensor housing disposed between a swing motor and a swing drive. The swing sensor housing may be coupled to a rotary position sensor that indirectly detects rotation of the target gear or a speed sensor that directly detects rotation of the target gear. For embodiments with no target gear, but with upper and lower frames rotatably coupled together by a ring gear and a swing gear, the sensor may be a rotary position sensor mounted to a slip ring assembly and magnet that are connected to a hydraulic swivel between the upper and lower frames or the sensor may be a speed sensor that detects rotation of the swing gear. The sensors generate a signal that is communicated to a controller or an ECM that accurately reflects the angular movement imparted to the work implement by the swing drive.
US08836322B2	Method and system of a sensor interface having dynamic automatic gain control dependent on speed Embodiments of the invention described herein provide a magnetic sensor interface capable of adjusting signal conditioning dynamically using a speed signal of a target such that the true positive and negative peaks of the input signal are maintained for the given target across its entire speed range (0-Max rpm), therefore increasing the signal to noise ratio at low speeds and avoiding clipping or distortion at high speeds. In one aspect, a method comprises receiving an alternating differential voltage signal from a sensor. The differential voltage signal has an amplitude that changes relative to a change in speed of a target. The alternating differential voltage signal is converted to an attenuated single-ended voltage signal that can be dynamically scaled. The attenuated single-ended voltage signal can be scaled by multiplying the attenuated single-ended voltage signal by a scaling factor. The scaling factor is selected relative to the speed signal and is selected relative to a signal-to-noise ratio of the scaled attenuated single-ended voltage signal.
US08836321B2	Motor speed detection apparatus and motor control apparatus The motor speed detection apparatus detects rotational speed of a motor. The apparatus includes an FG coil (21) and a magnet (22) to be relatively moved with rotation of the motor, the FG coil outputting an alternating-current signal to be sampled by the apparatus, an A/D converter (1) to convert the alternating-current signal into a digital signal, an integrator (2) to perform time integration on the digital signal, a first determiner (3, 9) to determine which one of plural threshold ranges includes an integration value obtained by the integrator, a second determiner (3, 8) to determine whether change of the integration value is increase or decrease, and a logical product calculator (3, 10) to produce a binary signal showing a logical product of determination results of the first and second determiners. The apparatus calculates the rotational speed based on a production cycle of the binary signal.
US08836320B2	Apparatus for decoupling a radio-frequency signal transmitted on a data transmission line An apparatus for decoupling a radio-frequency signal transmitted on a data transmission line having a first line element and a second line element, or for decoupling interference voltages includes: a tapping module, connected to the first and second line elements at a first tapping location of the data transmission line, for decoupling the radio-frequency signal or interference voltages; a current probe module, coupled to the first line element at a second tapping location of the data transmission line; and an output capable of being matched to different input impedances of a device connected to the output.
US08836319B2	Method for measuring the current level of an alternating current A method for measuring a current level of an alternating current uses a current transformer having a measurement winding and a test winding. The resistance of the test winding is measured, the temperature of the test winding and therefore of the measurement winding is determined therefrom, and a value for a current level measured on the measurement winding is corrected using that temperature.
US08836315B2	Resistance signal generating circuit with n temperature characteristic adjusting elements According to one embodiment, a reference signal generating circuit includes a first nonlinear element that generates a first reference voltage, a second nonlinear element that generates a second reference voltage, a current controlling circuit that controls a current flowing to the first nonlinear element and a current flowing to the second nonlinear element based on an output voltage of the current controlling circuit itself, and N temperature characteristic adjusting elements (N is an integer of 2 or larger) that individually adjust the temperature characteristics of the output voltage of the current controlling circuit.
US08836309B2	Control device for buck-boost converter A control device is disclosed, having a signal generating circuit and a mode decision circuit. The signal generating circuit is used to generate a first control signal and a second control signal according to an output voltage of a buck-boost converter. The first control signal is used to conduct a first switch and a second switch of the buck-boost converter. The second control signal is used to conduct a third switch and a fourth switch of the buck-boost converter. When the duty cycle of the first control signal is greater than a first predetermined value and the duty cycle of the second control signal is less than a second predetermined value, the mode decision circuit configures the signal generating circuit to generate the first control signal and the second control signal with substantially the same duty cycle.
US08836298B1	Multi-phase switching regulator and control method thereof The present invention discloses a multi-phase switching regulator and a control method thereof. The multi-phase switching regulator includes plural power stage circuits, wherein at least one power stage circuit is enabled or disabled according to a phase adding/shedding signal; at least one zero current detection circuit, which is coupled to one of the power stage circuit, for generating a trigger signal according to an inductor current in a corresponding one of the power stage circuits, a zero current reference signal, and an average reference signal; and a phase control circuit controlling the phase adding/shedding operation according to the trigger signal.
US08836295B2	Load driving device, and lighting apparatus and liquid crystal display device using the same A load driving device disclosed in the specification includes a power supply circuit for supplying to a load an output voltage converted from an input voltage, a detection voltage generation circuit for generating a detection voltage which varies depending on a magnitude of a voltage drop which across the load, and a control circuit for controlling the power supply circuit so that it performs output feedback control of the output voltage, on the basis of the detection voltage.
US08836293B1	Variable speed constant frequency system with generator and rotating power converter An electric power generating system includes a brushless wound field synchronous generator with n-number of power generating channels and n-number of bidirectional switches alternatively controlled to provide ac power at the output. Each power generating channel includes a control rotating transformer, a rotating power converter supplying power to field winding from the rotating power supply, and a center-tap single phase armature winding connected to the bidirectional switches. Rotating power converter modulates current in the field winding to obtain desired frequency and phase at the system output.
US08836291B2	Battery charger and battery charging method A rectification processor includes rectifier elements that control charge to batteries independently for each of the batteries. A charge-state detector detects charge states of the batteries from their voltages, and determines whether to select the batteries for charging in a half-cycle determined beforehand in accordance with the detected result. A synchronous signal detector detects a signal synchronized with the phase of the 3-phase alternate current (AC) generator from the 3-phase AC generator, and outputs a synchronous signal. A charge controller controls the charge in the rectification processor in synchronization with the 3-phase AC generator according to the synchronous signal from the synchronous signal detector, and, in accordance with the charge states of the batteries output from the charge-state detector, controls charge amounts to the battery/batteries that was determined for selection.
US08836289B2	Combination charger and motive power device A combined battery charger and motor driver circuit assembly includes a rechargeable battery, a traction motor configured to accept a pulse-width-modulated (PWM) drive, a PNP transistor array, a charging source of chopped and rectified DC, and a control circuit configured to apply a discrete PWM drive signal to the gate of each transistor in the PNP transistor array.
US08836279B2	Power supply apparatus, method for controlling the power supply apparatus, and computer-readable storage medium If a plurality of power receiving apparatuses are in a predetermined range, a power supply apparatus selects a power receiving apparatus to be preferentially charged based on the remaining capacities of batteries of the respective power receiving apparatuses, and stops charging of the power receiving apparatuses other than the selected power receiving apparatus until the remaining capacity of the selected power receiving apparatus reaches a predetermined value.
US08836271B2	Method and system for charging transportation vehicle without contact wire A charging method is used for a transportation vehicle without a contact wire. The transportation vehicle is configured so that when a vehicle (1) equipped with an energy storage device (5) stops at a station on a track (2), the energy storage device (5) of the vehicle (1) is charged by a charging device (9) provided on a ground side. The charging method includes charging, by the charging device (9), the energy storage device (5) with a voltage set value (VS) which is near a maximum allowable voltage value (VH) of the energy storage device (5).
US08836270B2	Inverter system and communication method In an inverter system, a phase adjusting unit configured to adjust, according to reception timing of first data, a phase of second PWM carrier to match a phase of first PWM carrier. A master inverter further includes an amplitude adjusting unit configured to adjust, when second data is received by a communication unit, according to the received second data, amplitude of a first command voltage to balance an actual output current output from a master inverter to the motor and an actual output current output from each of one or more slave inverters to the motor.
US08836268B2	Position sensing device, rotational actuator having the same, shift-by-wire system having the rotational actuator, and method for detecting position of movable member A pulse signal output unit sends three-phase pulse signals according to movement of the movable member. A counter unit adds a first predetermined value or a second predetermined value to a count value or subtracts the first predetermined value or the second predetermined value from the count value, according to a combination of the pulse signals appearing when all the pulse signals are normal and a combination of the pulse signals appearing when one of the pulse signals malfunctions. A position detection unit detects the position of the movable member according to the count value.
US08836267B2	Torque detection device and electric power steering system A torque detection device includes: a torsion bar that couples a first shaft to a second shaft; a magnet that is fixed to the first shaft; and a pair of magnetic yokes that are fixed to the second shaft and that are arranged to face each other in an axial direction. Each of the magnetic yokes includes a yoke ring and a plurality of lugs that are arranged in a circumferential direction on the corresponding yoke ring. Each yoke ring includes an extending portion that extends radially outward from base portions of the lugs, and a bent portion that is bent in the axial direction from a radially outer end portion of the extending portion. The outer size of the pair of magnetic yokes in the axial direction is larger than or equal to the length of the magnet in the axial direction.
US08836262B2	Method and arrangement for determining the dynamic state of an electric motor In a method for the determination of a current initial rotational position of a rotor and in an arrangement for carrying out same, an incremental position encoder outputs an output signal. The output signal is produced by superposition of a chronologically random and systematically fluctuating signal interference on a basic signal, and composed of at least two component signals which change periodically in accordance with the rotational position of the rotor and are in a fixed angular relationship to one another. To determine the position, the output signal is used exclusively. The current initial rotational position of the rotor relative to a reference initial rotational position is determined by comparing the time profile of the portion of the systematically fluctuating signal interference of a current measured value sequence of the signal and the measured values of a signal sequence acquired starting from the reference initial rotational position.
US08836261B2	Detection control system A detection control system includes a sensing unit, a control module and a driving module for a motor including a rotor and a stator. The sensing unit electrically connects the motor to sense a first and a second magnetic pole of the rotor cross a chip disposed between the rotor and the stator; a third magnetic pole is alternated to a forth magnetic pole of the stator to generate a sensing signal. A detection unit of the control module detects a kickback voltage value generated by a first current value changing to a second current value to calculate a minimum current value to generate a detecting signal. A timing unit receives the sensing and the detecting signal to calculate a first and a second period of time, and a discharging time. The driving module drives the rotor by receiving a control signal the control unit generates by controlling an alternating time.
US08836260B2	Method and apparatus for reducing torque variation in motor drive systems A method for controlling a specific electric machine includes receiving with a controller a back electromotive force (BEMF) coefficient for the specific electric machine. The controller is configured to control operation of an inverter coupled to the electric machine where the inverter is configured to provide or receive multi-phase electricity to or from the electric machine in motor mode or generator mode, respectively. The method further includes receiving with the controller an input related to a selected torque to be applied by or a selected power to be removed from the electric machine. The method further includes determining a first electrical parameter the inverter is to apply to in motor mode or a second electrical parameter the inverter is to convert power to in generator mode using the BEMF coefficient, and applying the first electrical parameter to the electric machine or converting the received power to the second electrical parameter.
US08836257B2	Household appliance including a fan speed controller A household appliance including a fan speed controller, and a method of controlling fan speed of a household appliance, are provided. The system includes a fan speed controller that cut a voltage to the fan motor, measures an electromotive force (EMF) of the fan motor at a predetermined time after the cutting of the voltage to the fan motor, and compares the measured electromotive force (EMF) to a table.
US08836255B2	Control device A control device that controls an electric motor drive device including a DC/AC conversion section that converts a DC voltage into an AC voltage using a detected angle detected by a resolver provided in an AC electric motor to supply the resulting AC voltage to the AC electric motor. The control device includes a correction information acquisition section that acquires first correction information on the basis of the rotational speed, and that acquires the second correction information on the basis of the modulation rate at the angle acquisition time point in the case where the rotational speed at the angle acquisition time point is less than the rotational speed threshold. A detected angle correction section corrects the detected angle on the basis of the correction information acquired by the correction information acquisition section.
US08836250B2	Systems and methods for cargo scanning and radiotherapy using a traveling wave linear accelerator based x-ray source using current to modulate pulse-to-pulse dosage Provided herein are systems and methods for operating a traveling wave linear accelerator to generate stable electron beams at two or more different intensities by varying the number of electrons injected into the accelerator structure during each pulse by varying the electron beam current applied to an electron gun. The electron beams may be used to generate x-rays having selected doses and energies, which may be used for cargo scanning or radiotherapy applications.
US08836249B2	Methods and systems for confining charged particles to a compact orbit during acceleration using a non-scaling fixed field alternating gradient magnetic field A method is described wherein a beam of charged particles is confined to an orbit within a compact region of space as it is accelerated across a wide range of energies. This confinement is achieved using a non-scaling magnetic field based on the Fixed Alternating Gradient principle where the field strength includes non-linear components. Examples of magnet configurations designed using this method are disclosed.
US08836247B2	Drift-tube linear accelerator A drift-tube linear accelerator that passes an injected particle beam through inside a plurality of cylindrical drift-tube electrodes arranged in a cylindrical cavity in a particle beam traveling direction and accelerates the particle beam by a radio-frequency electric field generated between the plurality of cylindrical drift-tube electrodes, wherein at least part of a focusing device for focusing the particle beam is disposed inside an end drift-tube electrode that is arranged nearest the injection side of the cylindrical cavity among the plurality of cylindrical drift-tube electrodes, with the focusing device being positionally adjustable independently of the end drift-tube electrode.
US08836243B2	LED lighting system A system and method involving lighting fixtures, a control network, a controller and other devices such as light sensors, input devices and network adapters for coordinating precise brightness and color schedules among the lighting fixtures while maintaining a high color reliability including provisions for managing a plurality of lighting fixtures. The lighting fixtures contain lighting elements selected such that when controlled properly, operating along a daytime locus, the resultant light output closely resembles sunlight on a cloudless day in spectral characteristics, and wherein the total flux of blue light can be adjusted from a relative level of 1-100% the maximum blue flux of the lighting fixture by controlling individual lighting elements.
US08836242B2	LED voltage adjustment device and drive system thereof The present invention provides LED voltage adjustment device and drive system thereof. The device includes PI regulator, with negative terminal connected to negative terminal of LED light bar to receive negative terminal voltage of light bar and positive terminal of PI regulator being for receiving reference voltage; integrator, for performing integral on output signal of PI regulator; a subtractor, with positive input terminal receiving output signal from PI regulator and negative terminal receiving overcurrent protection detection voltage from boost converter for driving light bar, and subtracting overcurrent protection detection voltage from output signal of PI regulator; comparator, with positive terminal receiving output signal from integrator and negative terminal receiving output signal from subtractor; and integrated circuit (IC) module, for receiving output signal from comparator and based on received output signal to control a control signal to conduct or cut off switch transistor of boost converter.
US08836239B2	LED lighting device and illumination apparatus including same An LED lighting device includes a converter for converting a power source voltage into a DC voltage and outputting it to an LED unit; and a controller for controlling an output of the converter. The converter has a chopper circuit including a series circuit of an inductance element and a capacitor; a switching element connected to the inductance element in series and turned on/off by the controller; and a diode as discharging path of the inductance element during an OFF state of the switching element. The controller controls an on/off time of the switching element such that a current supplied to the LED unit during a specific time period after a lighting operation is started becomes smaller than a current supplied to the LED unit in a steady state by using a voltage generated in a secondary coil of the inductance coil as an operating voltage thereof.
US08836238B2	Detect method for step dimming selection A detect method is provided for performing step dimming selection in an electronic ballast including an End of Lamp Life detect circuit and a half-bridge inverter, the End of Lamp Life detect circuit being connected to an input terminal of the control circuit, wherein each time when the power switch is turned on, it is judged whether the electronic ballast should enter the dimming mode or not by detecting the voltage at the input terminal of the control circuit before the half-bridge inverter starts operating.
US08836234B2	Power supply for lighting and luminaire According to one embodiment, a power supply for lighting includes a rectifying circuit, a smoothing capacitor, and a current control circuit. The rectifying circuit rectifies a phase-controlled alternating-current voltage supplied to between a pair of input terminals. The smoothing capacitor is connected to a high-potential terminal and a low-potential terminal of the rectifying circuit. A first electric current flows to the current control circuit in a period when an absolute value of the alternating-current voltage is lower than a specified value. After a second electric current larger than the first electric current flows when the absolute value of the alternating-current voltage increases to be equal to or larger than the specified value, the current control circuit is shut off to reduce a current value to be smaller than the second electric current until the absolute value of the alternating-current voltage decreases to be lower than the specified value.
US08836232B2	Adjustable light fixture Methods and apparatus for controlling a light fixture having at least one adjustable attribute are described. In one embodiment, a light fixture having at least one adjustable attribute comprises a housing, a light source disposed within the housing, a cover secured to the housing that allows at least some light from the light source to pass, a light control circuit, coupled to the light source and disposed within the housing, for detecting a state change of a switch and for providing a control signal for varying an attribute of the light fixture, and the switch, coupled to the light control circuit and disposed within the housing, comprising contacts that are opened and closed in response to a non-mechanical stimulus external to the housing.
US08836229B2	LED driver circuit An LED driver circuit includes: a bridge rectifier, a first compensation capacitor, a second compensation capacitor, and an LED module. The bridge rectifier is connected to an AC input power for producing a rectification output power. The first compensation capacitor is connected to a first rectification output terminal and an AC input terminal of the bridge rectifier. The second compensation capacitor is connected to a second rectification terminal and the AC input terminal of the bridge rectifier. The LED module is connected to the first rectification output terminal and the second rectification output terminal of the bridge rectifier. The first and second compensation capacitors in the present invention can effectively improve the total current harmonic distortion of the LED module and its utilization.
US08836226B2	Leading-edge phase-cut bleeder control A bleeder arrangement for a phase-cut circuit for a high-impedance load and having a leading-edge phase-cut device is disclosed, the bleeder arrangement comprising: a controllable current sink adapted to sink a latching current through the leading-edge phase-cut device, and a controller for controlling the controllable current sink, wherein the controller is configured to disable the current sink after the leading-edge phase phase-cut device has latched in at least two stages. A controller for use in such an arrangement is also disclosed, as is a method of controller such a bleeder arrangement.
US08836225B2	Dimming of LED driver A dimmable LED driver circuit comprises a resonant DC-DC converter coupled to an output circuit. The converter comprises a half bridge or full bridge switching circuit coupled to a resonant circuit. An output of the resonant circuit is rectified and fed to the output circuit. The output circuit may comprise at least one LED series or shunt switch for switching an LED unit on and off. A control circuit controls the switches of the switching circuit at a variable switching frequency. The control circuit is also configured for controlling the switching circuit for amplitude modulating the converter and for pulse-width modulating the converter at a first pulse-width modulation frequency lower than the switching frequency. The control circuit is may further be configured for controlling the switching of the LED switch at a second pulse-width modulation frequency lower than the switching frequency.
US08836224B2	Compact converter plug for LED light strings Disclosed is a compact inverter plug that can be used with LED lighting strings. The converter plug has a size and shape that is comparable to a standard wall plug and is capable of plugging into a standard wall socket. The converter plug is waterproof and can be easily assembled. A unique converter circuit is utilized that is compact and highly efficient. Monitoring is performed by a transformer coil that generates a monitoring signal. The converter is controlled by controlling the modulation frequency of a direct current signal using a controller.
US08836223B2	OLED panel with fuses Embodiments may provide a first device that may comprise a substrate, a plurality of conductive bus lines disposed over the substrate, and a plurality of OLED circuit elements disposed on the substrate, where each of the OLED circuit elements comprises one and only one pixel electrically connected in series with a fuse. Each pixel may further comprise a first electrode, a second electrode, and an organic electroluminescent (EL) material disposed between the first and the second electrodes. The fuse of each of the plurality of OLED circuit elements may electrically connect each of the OLED circuit elements to at least one of the plurality of bus lines. Each of the plurality of bus lines may be electrically connected to a plurality of OLED circuit elements that are commonly addressable and at least two of the bus lines may be separately addressable.
US08836218B2	Methods of treatment using combination therapy Provided herein are methods of treating a proliferative disease in a subject, comprising administering to the subject a therapeutically effective amount of AC220 and a nucleoside analog, a topoisomerase inhibitor or an anthracycline, or a combination thereof.
US08836216B2	Flat panel display device and method of manufacturing the same A flat panel display device and a method of manufacturing the same. The method of manufacturing the flat panel display device includes: forming a display on a substrate; preparing an organic layer mask comprising a first mask body, a regulator extending from the first mask body and contacting the organic layer, and a tunnel having a space between the first mask body and the regulator; forming an organic layer covering the display in a region divided by the regulator of the organic layer mask, and condensing a part of the organic layer permeating through the tunnel; preparing an inorganic layer mask; and forming an inorganic layer covering the organic layers formed in the region divided by the regulator through the inorganic layer mask and in the tunnel.
US08836215B2	Display panel integrating a driving circuit A display panel includes a periphery area, an active display area adjacent to the periphery, a driving chip disposed out of the active display area for driving the active display area, and a plurality of wires electrically connecting the driving chip and the active display area. The width of at least one wire at a portion adjacent to the driving chip is smaller than the width of the at least one wire at the other portion adjacent to the active display area.
US08836213B2	Organic light emitting diode display An OLED display is disclosed. The OLED display includes two substrates with organic light emitting elements therebetween. The organic light emitting elements include a second electrode in common among the organic light emitting elements, and one of the substrates includes an auxiliary electrode to connect to the common second electrode to reduce resistance in the electrical path from a power source to the second electrode.
US08836210B2	Light emitting device provided with lens for controlling light distribution characteristic The light emitting device comprises a substrate (2), a positive electrode (6) and a negative electrode (4) formed on the substrate (2), a light emitting diode (8) connected to the positive electrode (6) and the negative electrode (4), the transparent resin (12 and 14) that covers the light emitting diode (8), a fluorescent material (16) that absorbs at least part of light emitted by the light emitting diode (8) and converts it to light of longer wavelength, and the lens that changes the direction of light emission from the light emitting diode (8) and/or the fluorescent material (16). The resin (12 and 14) includes the fluorescent material (16) and is formed so as to constitute the lens of substantially semi-cylindrical shape, and the fluorescent material (16) included in the resin (12 and 14) is distributed with a higher concentration in a region near the surface of the light emitting diode (8) than in a region near the surface of the portion that constitutes the lens.
US08836208B2	Light-emitting device including LED element whose upper surface is free from white resin and method of manufacturing the same A light-emitting device includes a substrate that includes at least a pair of electrodes, an LED element electrically mounted on the substrate, a phosphor plate adhered to an upper surface of the LED element and including an upper surface and a lower surface each having an area larger than that of the upper surface of the LED element, a white resin provided on an upper surface of the substrate and seamlessly covering a peripheral side surface of the LED element and a peripheral side surface of the phosphor plate. A lower surface of the phosphor plate is adhered to the upper surface of the LED element through a transparent adhesive.
US08836207B2	Fluorescent layer and its preparation method and uses A fluorescent layer, its preparation method and uses are provided. The fluorescent layer is provided from a fluorescent material and a calcining material. The fluorescent material is in an amount ranging from about 5 wt % to about 95 wt % based on the total weight of the fluorescent layer. The fluorescent layer of the present invention can be used in a light-emitting diode to change the color of emitting-light and improve the heat dissipation of the light-emitting diode. Furthermore, the fluorescent layer of the present invention is free of an organic resin, and thus, does not have the problem of aging (etiolation). The final product has a stable, lasting and durable luminescent quality.
US08836206B2	Plasma display panel and phosphor A plasma display panel having a short decay time, high luminance, and high efficiency is provided. The plasma display panel includes a green phosphor layer that emits visible light when excited with vacuum ultraviolet rays. The green phosphor layer contains a green phosphor represented by the general formula aBaO.(2-a)EuO.bMgO.cSiO2.fCaCl2 (where 1.800≦a≦1.980, 0.950≦b≦1.050, 1.900≦c≦2.100, and 0.001≦f≦0.020).
US08836199B2	Power generation unit, secondary cell, and electronic apparatus A power generation unit includes a deforming member adapted to repeatedly deform a piezoelectric element, a pair of electrodes provided to the piezoelectric element, an inductor disposed between the pair of electrodes, and constituting a resonant circuit together with a capacitive component of the piezoelectric element, a first switch connected in series to the inductor, a member adapted to detect a timing at which a deformation direction of the deforming member is switched, a full bridge rectifier adapted to rectify a current output from the pair of electrodes, a capacitor connected to the full bridge rectifier, and adapted to store a current supplied from the full bridge rectifier, a second switch connected between either one of the pair of electrodes and the capacitor, and a control circuit adapted to operate the first switch and the second switch.
US08836197B2	Brush holder having radio frequency identification (RFID)temperature monitoring system An apparatus including: a brush holder; a radio frequency identification (RFID) device affixed to the brush holder, the RFID device including: a temperature sensor system for determining temperature(s) at one or more distinct locations on the brush holder; and a transmitter for providing indication of the temperature(s).
US08836195B2	Three-phase electric-motor winding with differing turn numbers forming fractional effective turns A motor is provided. When m is half of a number of slots of one phase and n is a divisor of m, the overall parallel winding of a total number of parallels p is equally divided n-fold into partial parallel windings Ni, having a number of parallels p/n, each partial parallel winding Ni comprises m sub-coils, the m sub-coils including n types of m/n sub-coils having a number of turns tj, at least one of the sub-coils differing in number of turns from the other sub-coils, and, for each pair of the slots in the stator, one sub-coil of each partial parallel winding Ni is wound around the pair of slots, and n sub-coils wound around the pair of the slots include every one of the n types of the sub-coils of the numbers of tj.
US08836194B2	Motor comprising asymmetric uneven preload indentations A motor including a rotor and a stator that supports and rotates the rotor is disclosed. In accordance with an embodiment of the present invention, the motor includes a magnetic member, which is installed in the rotor such that the magnetic member faces the stator, and a stator magnetic body, which is a part of the stator and has a part corresponding to the magnetic member formed asymmetrically therein. In this way, the motor can prevent a whirling effect by installing the magnetic member, which forms a preload, even the motor is thinner.
US08836190B2	Magnetic bearing, a rotary stage, and a reflective electron beam lithography apparatus A magnetic bearing (108) with an axis of rotation (106), wherein the magnetic bearing comprises: a cylindrical rotor (116) comprising a ferromagnetic material (118, 338, 440) wherein the cylindrical rotor has an axis of symmetry (114), wherein the cylindrical rotor has an inner radius (124), wherein the cylindrical rotor has a top side (128), a static hub (120), wherein the static hub has an overhang (122) which protrudes from the static hub and is located adjacent to the top side, a lift magnetic actuator apparatus (130) for controlling the distance (126) between the top side and the overhang, a radial magnetic actuator apparatus (132) for controlling the distance (136) between the inner radius and the axis of rotation.
US08836183B2	Rotating machine provided with coil and method of producing the rotating machine In a rotating machine, a recording disk is mounted on a hub. A base rotatably supports the hub through a bearing unit. A core is fixed to the base and includes an annular portion and a salient pole radially extending therefrom. A coil is formed by winding a wire around the salient pole. The wire is pulled out to the back surface of the base through a pull-out hole provided in the base and soldered to a wiring.
US08836180B2	Generator motor cooling structure and generator motor A generator motor cooling structure for cooling a generator motor, which includes a housing storing an input/output shaft to which a rotor is attached and a stator disposed at an outer periphery portion of the rotor, by a cooling medium, includes: a protrusion portion that protrudes toward the rotor from a surface at a side of the housing of an end side member disposed at one end portion of the housing in a direction of a central rotation axis of the input/output shaft, wherein the protrusion portion is provided on an inner side of a coil of the stator in a radial direction, on an outer side of a bearing attached to the input/output shaft in the radial direction, in at least a partial region on a periphery of the central rotation axis.
US08836178B2	Linear vibrator Disclosed herein is a linear vibrator, including: a stator including a coil; and a vibrator including a magnet opposite to the coil, wherein the linear vibrator is linearly vibrated due to electromagnetic induction of the coil and the magnet, the magnet is formed in a disc shape in which a cut part is formed by cutting a portion thereof, a magnetic fluid band is formed on an outer peripheral surface of the magnet, and a portion of the magnetic fluid band is in contact with the coil. According to the present invention, there is provided the linear vibrator capable of suppressing weak vibration generated at the time of external impact or movement, previously preventing noise generated as the vibrator applies an impact to the stator due to excessive vibration, and minimizing attenuation of the linear vibration quantity as the cut part that is formed by cutting a portion of the magnet to form the air gap with the coil.
US08836177B2	Voice coil motor A VCM (voice coil motor) is disclosed, the VCM including: a rotor including a lens-accommodating, both ends opened cylindrical bobbin and a coil block including a coil wound on a periphery of the bobbin; a stator including a cylindrical yoke formed with a lens-exposing opening, a plurality of magnets disposed inside the yoke and opposite to the coil block, and a magnet fixing member disposed inside the yoke to fix the plurality of magnets; and an elastic member elastically supporting the bobbin.
US08836171B2	Modulation circuit and method The present invention provides a modulation circuit and a method for modulating a wireless power transfer circuit. The modulation circuit has a switching circuit having a first state and a second state. The modulation circuit also has a modulation mode in which the first state defines a normal state and the second state defines an operative state. In the operative state, the modulation circuit modulates an electrical parameter of the wireless power transfer circuit in a modulation direction. The modulation circuit is configured to apply a trial modulation to the electrical parameter to determine whether the modulation direction is in a desired modulation direction. The modulation circuit is also configured to apply a modulation translation if the modulation direction is not in the desired modulation direction, with the modulation translation changing the modulation mode such that the modulation direction is in the desired modulation direction.
US08836168B2	Remaining capacity equalizing device and method, and remaining capacity equalizing device set A remaining capacity equalizing device is provided having an inductance connected to a reference node of a battery pack and first and second switching elements. A first closed circuit is formed through selecting sequentially a first switching switch from a first switching switch group that is connected to the high-voltage side of the reference node. A second closed circuit is formed by selecting sequentially a second switching switch from among a second switching switch group that is connected to the low-voltage side of the reference node. The first and second switching elements are turned ON/OFF alternatingly for each combination of first and second closed circuits so that, during a specific interval, the ratio of the conductive times of the first and second switching elements is the inverse of the ratio of the numbers of storage cells in the first and second closed circuits.
US08836162B2	Inverter for photovoltaic systems An inverter for solar panels which includes at least two inverter inputs to each of which a group of solar panels can be connected, and an inverter output to which a network can be connected. The inverter includes an inverter element with a direct voltage input and an alternating voltage output which converts a direct voltage into alternating voltage and sends it to the inverter output. An electronic control system monitors the direct voltage and the network voltage and/or the network frequency of the network. A switching system is electrically arrayed between one of the at least two inverter inputs and the direct voltage input of the inverter element. The electronic control system triggers the switching system to disconnect the at least one inverter input of the inverter from the direct voltage input of the inverter element.
US08836156B2	Fluid flow energy converter A novel oscillator comprises a curved sheet structure. The curved sheet structure comprises a curved sheet and a tensioner. The curved sheet structure oscillates when the tensioner of the curved sheet structure is extended between two rigidly or semi rigidly fixed points and the curved sheet structure is exposed to a fluid flow. The oscillation results in oscillating tension in the tensioner and oscillating motion of the tensioner in directions perpendicular and parallel to the direction of fluid flow. Energy conversion devices to couple the energy out of the oscillator include a coupling in line with the tensioner and a coupling generally perpendicular to the extension of the tensioner.
US08836152B2	Hydraulic wave energy converter with variable damping A wave energy converter has a shell, a pendulum pivotally positioned in the shell, a pump linked to the pendulum and operable by a movement of the pendulum so as to pump a hydraulic fluid outwardly therefrom, a motor interconnected to the pump such that the hydraulic fluid from the pump causes a rotation of the motor, and an electrical generator connected to the motor such that the rotation of the motor causes the electrical generator to produce electrical energy. A pendulum adjuster can be operatively connected to the pendulum so as to change a center of gravity of the pendulum.
US08836149B2	Hybrid substrates, semiconductor packages including the same and methods for fabricating semiconductor packages Provided are a hybrid substrate, a semiconductor package including the same, and a method for fabricating the semiconductor package. The hybrid substrate may include an insulation layer, and an organic layer. The insulation layer may include a top, a bottom opposite to the top, and a conductive pattern having different pitches. The organic layer may be connected to the bottom of the insulation layer, and may include a circuit pattern connected to the conductive pattern. The conductive pattern may include a first metal pattern, and a second conductive pattern. The first metal pattern may have a first pitch, and may be disposed in the top of the insulation layer. The second conductive pattern may have a second pitch greater than the first pitch, and may be extended from the first metal pattern to be connected to the circuit pattern through the insulation layer.
US08836148B2	Interposer for stacked semiconductor devices A semiconductor device is disclosed, comprising a substrate having at least one substrate bonding pad. A plurality of semiconductor dies are stacked on the substrate. Each semiconductor die has at least one die bonding pad located on an active surface of the die. A plurality of interposers are each mounted on a corresponding one of the semiconductor dies. Each interposer has an aperture formed therethrough in alignment with the at least one die bonding pad. An electrical connection between the at least one die bonding pad and the at least one substrate bonding pad is formed at least in part by the interposer. The electrical connection includes at least one wire bond.
US08836146B2	Chip package and method for fabricating the same A chip package includes a semiconductor substrate, a first metal pad over the semiconductor substrate, and a second metal pad over the semiconductor substrate. In a case, the first metal pad is tape automated bonded thereto, and the second metal pad is solder bonded thereto. In another case, the first metal pad is tape automated bonded thereto, and the second metal pad is wirebonded thereto. In another case, the first metal pad is solder bonded thereto, and the second metal pad is wirebonded thereto. In another case, the first metal pad is bonded to an external circuitry using an anisotropic conductive film, and the second metal pad is solder bonded thereto. In another case, the first metal pad is bonded to an external circuitry using an anisotropic conductive film, and the second metal pad is wirebonded thereto.
US08836142B2	Semiconductor devices Semiconductor devices are disclosed. The semiconductor device may include a semiconductor substrate having a first surface and a second surface opposite to each other and a pad trench formed at a portion of the second surface, a through-electrode penetrating the semiconductor substrate and protruding from a bottom surface of the pad trench. A buried pad may be disposed in the pad trench and may surround the through-electrode.
US08836141B2	Conductor layout technique to reduce stress-induced void formations A semiconductor device is prepared by an annealing process to interconnect at least two components of the device by a conductor line surrounded by an insulator material. The annealing process results in formation of residual stresses within the conductor line and the insulator material. A notch is designed in the layout on a selective portion of the mask for patterning conductor line. The existence of a shape of notch on the selective portion generates extra stress components within the conductor line than if without the existence of the notch. The position of the notch is selected so that the extra stress components substantially counteract the residual stresses, thereby causing a net reduction in the residual stresses. The reduction in the residual stresses results in a corresponding mechanical stress migration and therefore improvement in the reliability of the device.
US08836140B2	Three-dimensional vertically interconnected structure The present invention discloses a three-dimensional vertically interconnected structure and a fabricating method for the same. The structure comprises at least two layers of chips which are stacked in sequence or stacked together face to face, and an adhesive material is used for adhesion between adjacent layers of said chips, each layer of chips contains a substrate layer and a dielectric layer sequentially bottom to top; an front surface of the chip has a first concave with an annular cross section, and the first concave is filled with metal inside to form a first electrical conductive ring connecting to microelectronic devices inside the chip via a redistribution layer; a first through layers of chips hole having the same radius and center as inner ring of the first electrical conductive ring penetrates the stacked chips and has a first micro electrical conductive pole inside that is electrically connected to the first electrical conductive ring. The three-dimensional vertically interconnected structure of the present invention enhances the strength of the electric interconnection and the adhesion between adjacent layers of chips, and in the meantime the disclosed fabricating method simplifies the process difficulty and therefore improves the yield.
US08836139B2	CD control A method includes providing a substrate with a patterned second layer over a first layer. The second layer includes a second layer opening having a first CD equal to the CD produced by a lithographic system (CDL). CDL is larger than a desired CD (CDD). A third layer is formed to fill the opening, leaving a top surface of the second layer exposed. The second layer is removed to produce a mesa formed by the third layer. The CD of the mesa is equal to about the first CD. The mesa is trimmed to produce a mesa with a second CD equal to about CDD. A fourth layer is formed to cover the first layer, leaving a top of the mesa exposed. The substrate is etched to remove the mesa and a portion of the first layer below the mesa to form an opening in the first layer with CDD.
US08836138B2	Wiring substrate and semiconductor package A wiring substrate includes: a substrate body made of an inorganic material; a first electrode portion, having a flat-plate shape, which penetrates through the substrate body in a thickness direction of the substrate body; a second electrode portion, having a flat-plate shape, which penetrates through the substrate body in the thickness direction and faces the first electrode portion at a prescribed interval; and a first signal electrode, which is provided between the first electrode portion and the second electrode portion and penetrates through the substrate body in the thickness direction, wherein one of the first electrode portion and the second electrode portion is a ground electrode and the other is a power electrode.
US08836136B2	Package-on-package assembly with wire bond vias A microelectronic package can include wire bonds having bases bonded to respective conductive elements on a substrate and ends opposite the bases. A dielectric encapsulation layer extending from the substrate covers portions of the wire bonds such that covered portions of the wire bonds are separated from one another by the encapsulation layer, wherein unencapsulated portions of the wire bonds are defined by portions of the wire bonds which are uncovered by the encapsulation layer. Unencapsulated portions can be disposed at positions in a pattern having a minimum pitch which is greater than a first minimum pitch between bases of adjacent wire bonds.
US08836135B2	Semiconductor device with interconnection connecting to a via A semiconductor device including: a semiconductor substrate; a plurality of interconnect layers disposed at different heights from the semiconductor substrate, each interconnect layer including an interconnection formed therein; and a via formed in a columnar shape extending in the stack direction of the interconnect layers, the via electrically connecting the interconnections of the different interconnect layers, the interconnections including an intermediate interconnection in contact with the via in the intermediate portion thereof, and the intermediate interconnection including a first type intermediate interconnection passing through the via in a direction perpendicular to the stack direction and in contact with the via on the top surface, bottom surface, and both side surfaces thereof.
US08836130B2	Light emitting semiconductor element bonded to a base by a silver coating An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. In the semiconductor device, silver arranged on a semiconductor element and silver arranged on a base are bonded. No void is present or a small void, if any, is present at an interface between the semiconductor element and the silver arranged on the semiconductor element, no void is present or a small void, if any, is present at an interface between the base and the silver arranged on the base, and one or more silver abnormal growth grains and one or more voids are present in a bonded interface between the silver arranged on the semiconductor element and the silver arranged on the base.
US08836129B1	Plug structure A plug structure including a first dielectric layer, a second dielectric layer, a barrier layer and a second plug is provided. The first dielectric layer having a first plug therein is located on a substrate, wherein the first plug physically contacts a source/drain in the substrate. The second dielectric layer having an opening exposing the first plug is located on the first dielectric layer. The barrier layer conformally covers the opening, wherein the barrier layer has a bottom part and a sidewall part, and the bottom part is a single layer and physically contacts the first plug while the sidewall part is a dual layer. The second plug fills the opening and on the barrier layer. Moreover, a process of forming a plug structure is also provided.
US08836128B1	Forming fence conductors in an integrated circuit A spacer etching process produces ultra-narrow conductive lines in a plurality of semiconductor dice. Sub-lithographic patterning of the conductive lines are compatible with existing aluminum and copper backend processing. A first dielectric is deposited onto the semiconductor dice and trenches are formed therein. A conductive film is deposited onto the first dielectric and the trench surfaces. All planar conductive film is removed from the faces of the semiconductor dice and bottoms of the trenches, leaving only conductive films on the trench walls, whereby “fence conductors” are created therefrom. Thereafter the gap between the conductive films on the trench walls are filled in with insulating material. A top portion of the insulated gap fill is thereafter removed to expose the tops of the fence conductors. Portions of the fence conductors and surrounding insulating materials are removed at appropriate locations to produce desired conductor patterns comprising isolated fence conductors.
US08836124B2	Fuse and integrated conductor A fuse structure includes within an aperture within a dielectric layer located over a substrate that exposes a conductor contact layer within the substrate a seed layer interposed between the conductor contact layer and another conductor layer. The seed layer includes a doped copper material that includes a dopant immobilized predominantly within the seed layer. The fuse structure may be severed while not severing a conductor interconnect structure also located over the substrate that exposes a second conductor contact layer within a second aperture. In contrast with the fuse structure that includes the doped seed layer having the immobilized dopant, the interconnect structure includes a doped seed layer having a mobile dopant.
US08836123B2	Methods for discretized formation of masking and capping layers on a substrate The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes used in integrated circuit fabrication. A substrate having an array of differentially processed regions thereon is processed by delivering materials to or modifying regions of the substrate.
US08836122B2	Semiconductor device having copper wiring with increased migration resistance A semiconductor device has: a semiconductor substrate formed with a plurality of semiconductor elements, a plurality of interlevel insulating films laminated above the semiconductor substrate, including a first and a second interlevel insulating films adjacent to each other; a first wiring trench formed in the first interlevel insulating film; and a first damascene wiring including: a first barrier metal film having a diffusion preventive function, formed covering inner surface of the first wiring trench and defining a first main wiring trench; and a first main wiring layer filling the first main wiring trench, formed of first metal element, and added with second metal element having migration suppressing function, at spatially different concentration.
US08836113B2	Electronic module An electronic module. One embodiment includes a carrier. A first transistor is attached to the carrier. A second transistor is attached to the carrier. A first connection element includes a first planar region. The first connection element electrically connects the first transistor to the carrier. A second connection element includes a second planar region. The second connection element electrically connects the second transistor to the carrier. In one embodiment, a distance between the first planar region and the second planar region is smaller than 100 μm.
US08836112B2	Semiconductor package for high power devices A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.
US08836107B2	High pin count, small SON/QFN packages having heat-dissipating pad A plastic SON/QFN package (300) for high power has a pair of oblong metal pins (320, 321) exposed from a surface of the plastic (301), the pins straddling a corner (302) of the package; each pin has a long axis (320a, 321a), the long axes of the pair forming a non-orthogonal angle. Package (300) further includes a chip assembly pad (310), acting as a thermal spreader.
US08836106B2	Semiconductor device In a QFN that includes a die pad, a semiconductor chip mounted on the die pad, a plurality of leads arranged around the semiconductor chip, a plurality of wires that electrically connect the plurality of electrode pads of the semiconductor chip with the plurality of leads, respectively, and a sealing member sealing the semiconductor chip and the plurality of wires, first and second step portions are formed at shifted positions on the left and right sides of each of the leads to make the positions of the first and second step portions shifted between the adjacent leads. As a result, the gap between the leads is narrowed, thereby achieving the miniaturization or the increase in the number of pins of the QFN.
US08836105B2	Semiconductor device package with cap element A method of assembling a semiconductor device includes providing a substrate having an array of substrate elements linked by substrate corner elements and separated by slots extending between the corner elements. Semiconductor dies are positioned on the substrate elements. A cap, frame and contact structure is provided that has a corresponding array of caps supported by corner legs linking the caps to frame corner elements, frame elements linking the frame corner elements, and sets of electrical contact elements supported by the frame elements. The cap, frame and contact structure is fitted on the substrate with the caps extending over corresponding dies, the frame corner elements extending over the substrate corner elements, and the sets of electrical contact elements disposed in the slots. The dies are connected electrically with the electrical contact elements and the assembly is encapsulated and singulated. Singulating removes the frame elements.
US08836102B2	Multilayered semiconductor device, printed circuit board, and method of manufacturing multilayered semiconductor device Provided is a multilayered semiconductor device, including: a first semiconductor package including a first semiconductor element and a first wiring board; a second semiconductor package including: a second semiconductor element, a second wiring board and a first encapsulating resin for encapsulating the second semiconductor element therein; and a plate member disposed between the first semiconductor package and the second semiconductor package, the first semiconductor package, the plate member, and the second semiconductor package being stacked in this order, in which the first wiring board and the second wiring board are electrically connected to each other via a metal wire through one of a notch and an opening formed in the plate member and the first semiconductor element, the second semiconductor package, and the metal wire are encapsulated in a second encapsulating resin.
US08836101B2	Multi-chip semiconductor packages and assembly thereof Semiconductor packages and method of fabricating them are described. In one embodiment, the semiconductor package includes a substrate having a first and a second die attach pad. A first die is disposed over the first die attach pad. A second die is disposed over the second die attach pad. A third die is disposed between the first and the second die. The third die having a first, a second, and a third portion such that the first portion is disposed above a portion of the first die, the second portion is disposed above a portion of the second die, and the third portion is disposed above an area between the first die and the second die.
US08836100B2	Slotted configuration for optimized placement of micro-components using adhesive bonding An arrangement for improving adhesive attachment of micro-components in an assembly utilizes a plurality of parallel-disposed slots formed in the top surface of the substrate used to support the micro-components. The slots are used to control the flow and “shape” of an adhesive “dot” so as to quickly and accurately attach a micro-component to the surface of a substrate. The slots are formed (preferably, etched) in the surface of the substrate in a manner that lends itself to reproducible accuracy from one substrate to another. Other slots (“channels”) may be formed in conjunction with the bonding slots so that extraneous adhesive material will flow into these channels and not spread into unwanted areas.
US08836099B2	Leadless package housing having a symmetrical construction with deformation compensation A leadless package for semiconductor elements has at least two semiconductor elements which are situated on a connection region of a lead frame of the leadless package in such a way that when deformations of the semiconductor elements occur, the deformations of the semiconductor elements compensate one another.
US08836097B2	Semiconductor device and method of forming pre-molded substrate to reduce warpage during die molding A semiconductor device has a substrate with a plurality of conductive vias formed through the substrate and conductive layer formed over the substrate. A first encapsulant is deposited over the substrate outside a die attach area of the substrate. The first encapsulant surrounds each die attach area over the substrate and the die attach area is devoid of the first encapsulant. A channel connecting adjacent die attach areas is also devoid of the first encapsulant. A first semiconductor die is mounted over the substrate within the die attach area after forming the first encapsulant. A second semiconductor die is mounted over the first die within the die attach area. An underfill material can be deposited under the first and second die. A second encapsulant is deposited over the first and second die and first encapsulant. The first encapsulant reduces warpage of the substrate during die mounting.
US08836095B2	Electronic component package and base of the same A base of an electronic component package holds an electronic component element. The base has a bottom face in a rectangular shape in plan view. The base includes a pair of terminal electrodes having a rectangular shape on the bottom face. The pair of terminal electrodes are to be bonded on an external circuit substrate with a conductive bonding material. The pair of terminal electrodes have mutually symmetrical shapes. Each of the terminal electrodes has a long side adjacent to or on an edge of a long side of the bottom face. The long side of each of the terminal electrodes is disposed parallel to the long side of the bottom face. The long side of each of the terminal electrodes has a length that is more than half a length of the long side of the bottom face.
US08836094B1	Package device including an opening in a flexible substrate and methods of forming the same Methods and apparatus are disclosed for forming ultra-thin packages for semiconductor devices on flexible substrates. A flexible substrate may comprise a plurality of insulating layers and redistribution layers. Openings of the flexible substrate may be formed at one side of the flexible substrate, two sides of the flexible substrate, or simply cut through the flexible substrate to divide the flexible substrate into two parts. Connectors may be placed within the opening of the flexible substrate and connected to redistribution layers of the flexible substrate. Dies can be attached to the connectors and electrically connected to the connectors and to the redistribution layers of the flexible substrate. Structure supports may be placed at another side of the flexible substrate on the surface or within an opening.
US08836089B2	Positive photosensitive resin composition, method of creating resist pattern, and electronic component The positive-type photosensitive resin composition according to the present invention comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound that produces an acid by light, a thermal crosslinking agent, and a silane compound having at least one functional group selected from an epoxy group and a sulfide group.
US08836088B2	Semiconductor structure having etch stop layer A semiconductor structure includes a substrate, a conductive feature over the substrate, a conductive plug structure contacting a portion of an upper surface of the conductive feature, a first etch stop layer over another portion of the upper surface of the conductive feature, and a second etch stop layer over the first etch stop layer. The first etch stop layer is a doped etch stop layer. The first etch stop layer is to function as an etch stop layer during a predetermined etching process for etching the second etch stop layer.
US08836083B2	Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices A method of forming features on a target layer. The features have a critical dimension that is triple- or quadruple-reduced compared to the critical dimension of portions of a resist layer used as a mask. An intermediate layer is deposited over a target layer and the resist layer is formed over the intermediate layer. After patterning the resist layer, first spacers are formed on sidewalls of remaining portions of the resist layer, masking portions of the intermediate layer. Second spacers are formed on sidewalls of the portions of the intermediate layer. After removing the portions of the intermediate layer, the second spacers are used as a mask to form the features on the target layer. Integrated circuit devices are also disclosed.
US08836069B2	Method and apparatus for a lateral radiation detector A lateral Metal-Semiconductor-Metal (MSM) Photodetector (PD) is based on amorphous selenium (a-Se). It has low dark current, high photoconductive gain towards short wavelengths, and high speed of operation up to several KHz. From processing point of view, a lateral structure is more attractive due to ease of fabrication as well as compatibility with conventional thin-film transistor (TFT) processes. The lateral a-Se MSM PD therefore has potentials in a variety of optical sensing applications particularly in indirect X-ray imaging utilizing scintillators and ultraviolet (UV) imaging for life sciences.
US08836068B2	Backside illumination image sensor and electronic system including the backside illumination image sensor A backside illumination image sensor, a method of fabricating the same, and an electronic system including the backside illumination image sensor, the backside illumination image sensor including a semiconductor substrate, the semiconductor substrate having an upper surface and a lower surface; photodiodes in the semiconductor substrate; and metal interconnections below the semiconductor substrate, wherein each of the photodiodes includes a N-type region, a lower P-type region below the N-type region, and an upper P-type region on the N-type region.
US08836067B2	Transistor device and manufacturing method thereof A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate. The STI is disposed in the second well. The STI has at least one floating diffusion island. The source is disposed in the first well. The drain is disposed in the second well. The electric type of the floating diffusion island is different from or the same with that of the drain. The gate is disposed above the first well and the second well, and partially overlaps the first well and the second well.
US08836066B1	Avalanche photodiode configured for an image sensor An avalanche photodiode includes silicon crystal doped with impurities, where the doping profile of the silicon crystal includes a smoothly arcing donor-acceptor concentration curve decreasing with respect to distance into the interior of the silicon crystal that is interrupted by a narrower peak of increased concentration in the interior of the silicon crystal prior to further decreasing with respect to distance along the smoothly arcing donor-acceptor concentration curve.
US08836063B2	Integrated passive component An integrated passive component having a semiconductor body, arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a passivation layer formed on the surface, an integrated circuit formed near the surface of the semiconductor body, whereby the integrated circuit is connected to metal surfaces via traces formed below the passivation layer, a part of the metal surfaces is connected to pins via bonding wires, and a first coil formed above the passivation layer, whereby the first coil with a plurality of turns has a longitudinal axis formed substantially parallel to the surface of the semiconductor body, and in a lower part of the first coil, said part which is formed substantially parallel to the longitudinal axis of the coil on the surface of the semiconductor body, parts of a plurality of turns are formed as sections of traces.
US08836062B2	Integrated passive component An integrated passive component having a semiconductor body, arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, and an integrated circuit formed on the surface of the semiconductor body, whereby the integrated circuit is connected by traces to the metal surfaces, and having a dielectric passivation layer formed on the surface, and the metal surfaces are connected to pins by bonding wires, and a first coil former, formed above the dielectric layer, with a winding, whereby the winding has a first connector and a second connector, and whereby the winding is formed as a wire or litz wire and the first connector of the winding is connected to a first metal surface and the second connector to a second metal surface.
US08836061B2	Magnetic tunnel junction with non-metallic layer adjacent to free layer A spin transfer torque magnetic random access memory (STTMRAM) magnetic tunnel junction (MTJ) stack includes layers to which when electric current is applied cause switching of the direction of magnetization of at least one of the layer. The STTMRAM MTJ stack includes a reference layer (RL) with a direction of magnetization that is fixed upon manufacturing of the STTMRAM MTJ stack, a junction layer (JL) formed on top of the RL, a free layer (FL) formed on top of the JL. The FL has a direction of magnetization that is switchable relative to that of the RL upon the flow of electric current through the spin transfer torque magnetic random access memory (STTMRAM) magnetic tunnel junction (MTJ) stack. The STTMRAM MTJ stack further includes a spin confinement layer (SCL) formed on top of the FL, the SCL made of ruthenium.
US08836058B2	Electrostatic control of magnetic devices A magnetic device includes a first electrode portion, a free layer portion arranged on the first electrode portion, the free layer portion including a magnetic insulating material, a reference layer portion contacting the free layer portion, the reference layer portion including a magnetic metallic layer, and a second electrode portion arranged on the reference layer portion.
US08836056B2	Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.
US08836042B2	Semiconductor device comprising an IGBT and a constant voltage circuit having switches and normally-on type MOSFETs connected in parallel A semiconductor device includes an IGBT, a constant voltage circuit, and protection Zener diodes. The IGBT makes/breaks a low-voltage current flowing in a primary coil. The constant voltage circuit and the protection Zener diodes are provided between an external gate terminal and an external collector terminal. The constant voltage circuit supplies a constant gate voltage to the IGBT to thereby set a saturation current value of the IGBT to a predetermined limiting current value. The IGBT has the saturation current value in a limiting current value range of the semiconductor device.
US08836036B2	Method for fabricating semiconductor devices using stress engineering A method for fabricating a semiconductor device is presented. The method comprises providing a gate stack including a gate dielectric and gate electrode over a substrate. Stressor regions comprising stressor material incorporated into substitutional sites of the substrate are formed within the substrate on opposed sides of the gate stack. A first stressor layer having a first stress value is formed over the semiconductor device after forming the stressor regions followed by an anneal to memorize at least a portion of the first stress value in the semiconductor device, wherein the anneal is conducted at a low temperature.
US08836035B2	Method and apparatus for reducing gate resistance An apparatus has a semiconductor device that includes: a semiconductor substrate having a channel region, a high-k dielectric layer disposed at least partly over the channel region, a gate electrode disposed over the dielectric layer and disposed at least partly over the channel region, wherein the gate electrode is made substantially of metal, and a gate contact engaging the gate electrode at a location over the channel region. A different aspect involves a method for making a semiconductor device that includes: providing a semiconductor substrate having a channel region, forming a high-k dielectric layer at least partly over the channel region, forming a gate electrode over the dielectric layer and at least partly over the channel region, the gate electrode being made substantially of metal, and forming a gate contact that engages the gate electrode at a location over the channel region.
US08836033B1	Method and apparatus for removing metallic nanotubes without transferring carbon nanotubes from one substrate to another substrate Embodiments of a method and apparatus for removing metallic nanotubes without transferring CNTs from one substrate to another substrate provide two methods of transferring a thin layer of crystalline ST-cut quartz wafer to the surface of a carrier silicon wafer for subsequent CNT growth, without resorting to CNT transfer. In other words, embodiments of a method and apparatus allow CNTs to be grown on the same substrate that metallic nanotube removal is performed, therefore eliminating the costly and messy step of transferring CNTs from one substrate to another. This is achieved through a residual thin layer of crystalline ST-cut quartz layer on a silicon wafer. The ST-cut quartz wafer promotes aligned growth of CNTs, while the underlying silicon wafer allows backgate burnout.
US08836031B2	Electrical isolation structures for ultra-thin semiconductor-on-insulator devices After formation of raised source and drain regions, a conformal dielectric material liner is deposited within recessed regions formed by removal of shallow trench isolation structures and underlying portions of a buried insulator layer in a semiconductor-on-insulator (SOI) substrate. A dielectric material that is different from the material of the conformal dielectric material liner is subsequently deposited and planarized to form a planarized dielectric material layer. The planarized dielectric material layer is recessed selective to the conformal dielectric material liner to form dielectric fill portions that fill the recessed regions. Horizontal portions of the conformal dielectric material liner are removed by an anisotropic etch, while remaining portions of the conformal dielectric material liner form an outer gate spacer. At least one contact-level dielectric layer is deposited. Contact via structures electrically isolated from a handle substrate can be formed within the contact via holes.
US08836027B2	Switch circuit using LDMOS element The present invention relates to a switch circuit, and more particularly, to a switch circuit that uses an LDMOS (lateral diffusion metal oxide semiconductor) device inside an IC (Integrated Circuit). In the switch circuit that uses the LDMOS device according to an embodiment of the present invention, a gate-source voltage (VGS) of the LDMOS device may be stably controlled through a current source and resistances, the characteristics of a switch may be maintained regardless of the voltages of both terminals (A and B) by using an N-type LDMOS and a P-type LDMOS in a complementary manner, and the current generated by the current source is offset inside the switch without flowing to the outside of the switch.
US08836023B2	Memory device with recessed construction between memory constructions A recessed transistor construction is formed between a first access transistor construction and a second access transistor construction to provide isolation between the access transistor constructions of a memory device. In some embodiments, a gate of the recessed transistor construction is grounded. In an embodiment, the access transistor constructions are recess access transistors. In an embodiment, the memory device is a DRAM. In another embodiment, the memory device is a 4.5F2 DRAM cell.
US08836021B2	Semiconductor device A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 Å or smaller. The interface between the source electrode and the source region is silicidized.
US08836020B2	Vertical nonvolatile memory devices having reference features A memory device includes a substrate having a cell array region defined therein. A dummy structure is disposed on or in the substrate near a boundary of the cell array region. The memory device also includes a vertical channel region disposed on the substrate in the cell array region. The memory device further includes a plurality of vertically stacked conductive gate lines with insulating layers interposed therebetween, the conductive gate lines and interposed insulating layers disposed laterally adjacent the vertical channel region and extending across the dummy structure, at least an uppermost one of the conductive gate lines and insulating layers having a surface variation at the crossing of the dummy structure configured to serve as a reference feature. The dummy structure may include a trench, and the surface variation may include an indentation overlying the trench.
US08836018B2	Semiconductor integrated device with channel region A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device precursor. The semiconductor device precursor includes a substrate, source/drain regions on the substrate, dummy gate stacks separating the source/drain regions on the substrate and a doped region under the dummy gate stacks. The dummy gate stack is removed to form a gate trench. The doped region in the gate trench is recessed to form a channel trench. A channel layer is deposited in the channel trench to form a channel region and then a high-k (HK) dielectric layer and a metal gate (MG) are deposited on the channel region.
US08836015B2	Planar SRFET using no additional masks and layout method A semiconductor power device is supported on a semiconductor substrate with a bottom layer functioning as a bottom electrode and an epitaxial layer overlying the bottom layer as the bottom layer. The semiconductor power device includes a plurality of FET cells and each cell further includes a body region extending from a top surface into the epitaxial layer. The body region encompasses a heavy body dopant region. An insulated gate is disposed on the top surface of the epitaxial layer, overlapping a first portion of the body region. A barrier control layer is disposed on the top surface of the epitaxial layer next to the body region away from the insulated gate. A conductive layer overlies the top surface of the epitaxial layer covering a second portion of the body region and the heavy body dopant region extending over the barrier control layer forming a Schottky junction diode.
US08836008B2	Semiconductor device and method of manufacturing same Certain embodiments provide a semiconductor device comprising a plurality of memory cell arrays each of which includes a plurality of memory cell transistors and select transistors each of which is disposed at either end of the memory cell transistors, a diffused layer formed between a first and a second select transistors adjacent to each other, a first sidewall film formed on each of the opposed sidewalls of said first and second select transistors, a second sidewall film formed on said first sidewall film, and a conducting layer which contacts with said diffused layer. The second sidewall film covers at least part of the top surface and the side surface of said first sidewall film. The edge of said contact portion is positioned at a distance no less than the total thickness of said first and second sidewall films from the sidewalls of said first and second select transistors.
US08836005B2	Memory array A memory array includes a charge storage structure and a plurality of conductive materials over the charge storage structure is provided. Each conductive material, serving as a word line, has a substantially arc-sidewall and a substantially straight sidewall.
US08835993B2	Gate-all-around integrated circuit devices Gate-all-around integrated circuit devices include first and second source/drain regions on an active area of an integrated circuit substrate. The first and second source/drain regions form p-n rectifying junctions with the active area. A channel region extends between the first and second source/drain regions. An insulated gate electrode surrounds the channel region.
US08835989B2	Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate electrode placement specifications A semiconductor device includes first and second p-type diffusion regions, and first and second n-type diffusion regions that are each electrically connected to a common node. Conductive features are each defined within any one gate level channel that is uniquely associated with and defined along one of a number of parallel gate electrode tracks. The conductive features respectively form gate electrodes of first and second PMOS transistor devices, and first and second NMOS transistor devices. The gate electrodes of the first PMOS and second NMOS transistor devices are electrically connected in part by a first conductor within a first interconnect level. The gate electrodes of the second PMOS and first NMOS transistor devices are electrically connected in part by a second conductor within the first interconnect level. The first PMOS, second PMOS, first NMOS, and second NMOS transistor devices define a cross-coupled transistor configuration having commonly oriented gate electrodes.
US08835988B2	Hybrid monolithic integration The present invention describes a hybrid integrated circuit comprising both CMOS and III-V devices, monolithically integrated in a single chip. It allows the almost complete elimination of the contamination issues related to the integration of different technologies, maintaining at the same time a good planarization of the structure. It further simplifies the fabrication process, allowing the growth of high quality III-V materials on (100) silicon substrates lowering the manufacturing cost. Moreover, differently from many prior art attempts, it does not require silicon on insulator technologies and/or other expensive process steps. This invention enables the consolidation on the same integrated circuit of a hybrid switching power converter that takes advantage of the established circuit topologies of CMOS circuitries and of the higher mobility and voltage withstanding of III-V HEMT devices.
US08835987B2	Insulated gate bipolar transistors including current suppressing layers An insulated gate bipolar transistor (IGBT) includes a first conductivity type substrate and a second conductivity type drift layer on the substrate. The second conductivity type is opposite the first conductivity type. The IGBT further includes a current suppressing layer on the drift layer. The current suppressing layer has the second conductivity type and has a doping concentration that is larger than a doping concentration of the drift layer. A first conductivity type well region is in the current suppressing layer. The well region has a junction depth that is less than a thickness of the current suppressing layer, and the current suppressing layer extends laterally beneath the well region. A second conductivity type emitter region is in the well region.
US08835983B2	Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×1018 cm−3 or more and less than 1×1021 cm−3. The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.
US08835971B2	Light emitting device A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.
US08835969B2	Light emitting device package and lighting system Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.
US08835959B2	Transparent light emitting diodes A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.
US08835947B2	Display apparatus In a display apparatus including an organic EL element utilizing the optical interference effect, and a lens, a diameter of the lens is set such that, of light radiated from the organic EL element into a protective layer, light radiated at a larger angle than an angle, at which a light intensity distribution of the light radiated into the protective layer with respect to a radiation angle of the light takes a local minimum value, is not output to the outside of the display apparatus.
US08835943B2	Light-emitting element, light-emitting device, display device, and electronic apparatus A light-emitting element includes: an anode; a cathode; a light-emitting layer which is provided between the anode and the cathode and emits light as the anode and the cathode are electrically connected to each other; and an organic layer which is provided between the anode and the light-emitting layer to come in contact with both layers. The organic layer has a first function of transporting holes and a second function of preventing electrons infiltrating from the light-emitting layer from staying in the organic layer.
US08835941B2	Displays including semiconductor nanocrystals and methods of making same A display comprises a substrate and a light-emitting device disposed on the substrate, wherein the substrate comprises a semiconducting material and a circuit for controlling the light-emitted from the light-emitting device. A light-emitting device includes a light-emitting material comprising semiconductor nanocrystals and an electrode in electrical connection with the light-emitting material on a side thereof remote from the substrate.
US08835940B2	Micro device stabilization post A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is formed on an array of stabilization posts formed from a thermoset material. Each micro device includes a bottom surface that is wider than a corresponding stabilization post directly underneath the bottom surface.
US08835932B2	Normally-off compound semiconductor tunnel transistor with a plurality of charge carrier gases A tunnel transistor includes a first compound semiconductor, a second compound semiconductor on the first compound semiconductor, and a third compound semiconductor on the second compound semiconductor. A source extends through the second compound semiconductor into the first compound semiconductor. A drain spaced apart from the source extends through the third compound semiconductor into the second compound semiconductor. A first two-dimensional charge carrier gas extends in the first compound semiconductor from the source toward the drain and ends prior to reaching the drain. A second two-dimensional charge carrier gas extends in the second compound semiconductor from the drain toward the source and ends prior to reaching the source. A gate is over the first and second two-dimensional charge carrier gases. A corresponding method of manufacturing the tunnel transistor is also provided.
US08835930B2	Gallium nitride rectifying device A gallium nitride rectifying device includes a p-type gallium nitride based semiconductor layer and an n-type gallium nitride based semiconductor layer, the two layers forming a pn junction with each other. The p-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×1018 cm−3, or the n-type gallium nitride based semiconductor layer has a carrier trap (level) density of not more than 1×1016 cm−3.
US08835928B2	Semiconductor device and process for production thereof A semiconductor device (100) according to the present invention includes a plurality of source lines (16), a thin film transistor (50A), and a diode element (10A) that electrically connects two source lines (16) among the plurality of source lines (16). A connection region (26) in which the source lines (16) and the diode element (10A) are connected to each other includes a first electrode (3), a second electrode (6a), a third electrode (9a), and a fourth electrode (9b). A part of each source line (16) is a source electrode of the thin film transistor (50A), and the second electrode (6a) and the source lines (16) are formed separately from each other.
US08835927B2	Display substrate A display substrate includes a gate line extended in one direction of a base substrate, a first data line extended in a direction crossing the gate line, a transverse storage line extended in the extending direction of the gate line and crossing the first data line, a longitudinal storage line extended in the extending direction of the first data line and crossing the transverse storage line, a portion of an overlapping area between the longitudinal storage line and the transverse storage line is exposed in a contact part region having an opening partially exposing the transverse storage line. A contact electrode covers the contact part opening and makes electrical contact with each of the transverse storage line and the longitudinal storage line.
US08835925B2	Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same An array substrate for an IPS mode LCD device comprises a substrate; a gate line along a first direction; a data line along a second direction; a TFT connected to the gate and data lines; a common electrode having a plate shape on the substrate and formed of a first transparent conductive material; and a pixel electrode formed of a second transparent conductive material on the common electrode and including first and second portions and a plurality of third portions combining the first portion with the second portion. The first and second portions are parallel to the second direction and separated from each other and the plurality of third portions are oblique to the first and second portions and separated from one another.
US08835923B2	Protection method for an electronic device and corresponding device The semiconductor wafer for a silicon-on-insulator integrated circuit comprises an insulating region located between a first semiconductor substrate intended to receive the integrated circuit and a second semiconductor substrate containing at least one buried layer comprising at least one metal silicide.
US08835919B2	Thin film transistor substrate having metal oxide and method for manufacturing A thin film transistor substrate and a method for manufacturing the same are disclosed. The thin film transistor substrate includes a gate electrode disposed on a substrate, a gate insulating film disposed on the gate electrode, an active layer disposed on the gate insulating film and including metal oxide, a source electrode contacted with one side of the active layer and a pixel electrode contacted with the other side of the active layer; and an etch stopper interposed between the source electrode and the pixel electrode.
US08835914B2	Organic light emitting display devices and methods of manufacturing organic light emitting display devices An organic light emitting display device may include a first substrate, a first electrode disposed on the first substrate, a pixel defining layer disposed on the first electrode and the first substrate, an organic light emitting structure disposed on the first electrode, a second electrode disposed on the organic light emitting structure and the pixel defining layer, a second substrate disposed on the second electrode, etc. The pixel defining layer may include a fine uneven structure positioned in the display and the non-display regions. The organic light emitting structure may be substantially uniformly formed on the first electrode through the pixel defining layer having the fine uneven structure, so that an organic light emitting display device may exhibit increased lifetime and may show improved image quality.
US08835911B2	Light emitting element, light emitting device, display, and electronic device A light emitting element has an anode, a cathode, a light emitting layer which is provided between the anode and the cathode and emits light by energizing the anode and the cathode, and a functional layer (a hole injecting layer and a hole transporting layer) which is provided between the anode and the light emitting layer in contact therewith and has a function of transporting a hole, in which the hole injecting layer and the hole transporting layer each are constituted including an electron transporting material having electron transporting properties. The content of the electron transporting material contained in the hole injecting layer and the content thereof contained in the hole transporting layer are different from each other.
US08835908B2	Organic light-emitting device Disclosed is an organic light-emitting device (OLED), wherein a lower electrode, an organic emitting unit, an upper electrode, and a light enhance layer are subsequently formed between a bottom substrate and a top substrate. The light enhance layer has higher refractive index, between 2 and 3, than that of the top substrates, thereby efficiently improving the luminance intensity of the OLED.
US08835903B2	Light-emitting diode display and method of producing the same This invention relates light-emitting diode displays with simple structure and fabricating method as well as excellent efficiency. In an embodiment, the display features a nanorod LED array arranged on a substrate and divided into a first, second, and third sub-pixels. Two electrodes are preferably arranged in a vertical configuration for driving the sub-pixels. In another embodiment, a method features the sub-pixels for emitting multi-primary colors being formed on a conductive substrate and thus simplifies the steps.
US08835901B2	Semiconductor light emitting device According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting part, and a multilayered structural body. The light emitting part is provided between the first and second semiconductor layers and includes barrier layers and well layers alternately stacked. The multilayered structural body is provided between the first semiconductor layer and the light emitting part and includes high energy layers and low energy layers alternately stacked. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the multilayered structural body. An average In composition ratio on a side of the second semiconductor is higher than that on a side of the first semiconductor in the light emitting part.
US08835898B2	Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor A memory array including a plurality of memory cells. Each word line is electrically coupled to a set of memory cells, a gate contact and a pair of dielectric pillars positioned parallel to the word line with a spacer of electrically insulating material surrounding the gate contact. Also a method to prevent a gate contact from electrically connecting to a source contact for a plurality of memory cells on a substrate. The method includes depositing and etching gate material to partially fill a space between the pillars and to form a word line for the memory cells, etching a gate contact region for the word line between the pair of pillars, forming a spacer of electrically insulating material in the gate contact region, and depositing a gate contact between the pair of pillars to be in electrical contact with the gate material such that the spacer surrounds the gate contact.
US08835896B2	Nonvolatile variable resistance element According to one embodiment, a nonvolatile variable resistance element includes a first electrode, a second electrode, a variable resistance layer, and a dielectric layer. The second electrode includes a metal element. The variable resistance layer is arranged between the first electrode and the second electrode. A resistance change is reversibly possible in the variable resistance layer according to move the metal element in and out. The dielectric layer is inserted between the second electrode and the variable resistance layer and has a diffusion coefficient of the metal element smaller than that of the variable resistance layer.
US08835894B2	Resistive memory structure and method for fabricating the same The present invention discloses a resistive memory structure and a method for fabricating the same. The memory structure comprises a plurality of memory cells. Each memory cell further comprises two separate upper sub-electrodes fabricated from an upper electrode, two separate lower sub-electrodes fabricated from a lower electrode and intersecting the upper sub-electrodes, and a resistive layer arranged between the upper sub-electrodes and the lower sub-electrodes. Thereby, four sub-memory cells are formed in the intersections of the two upper sub-electrodes, the two lower sub-electrodes, and the resistive layer. Thus is increased the density of a memory structure in an identical area.
US08835893B2	Resistive memory cell fabrication methods and devices A phase change memory cell and methods of fabricating the same are presented. The memory cell includes a variable resistance region and a top and bottom electrode. The shapes of the variable resistance region and the top electrode are configured to evenly distribute a current with a generally hemispherical current density distribution around the first electrode.
US08835886B2	UV nail lamp A lamp includes: a housing; a platform supported by the housing; a left light source disposed on a left side of the lamp; a right light source disposed on a right side of the lamp; a first top light source disposed at least partially above the platform, wherein; the left and right sources extend closer to a front of the lamp than the first top light source; and a space between the platform and the; light sources; to simultaneously receive therein five nails of all five digits of a hand or foot of a user. The positions of the sources and platform may be designed so as to provide substantially uniform light flux to all five nails so as to synchronously and uniformly cure light-curable nail gel or acrylic on the user's nails.
US08835885B2	Charged particle beam irradiation device A charged particle beam irradiation device includes an accelerator that accelerates charged particles and emits a charged particle beam; an irradiation unit that irradiates a body with the charged particle beam; a duct that transports the charged particle beam to the irradiation unit; a tubular body arranged on a propagation path of the charged particle beam within the irradiation unit, has inert gas filled thereinto, and has particle beam transmission films transmitting the charged particle beam therethrough at an inlet and an outlet thereof; a gas supply unit that supplies the inert gas into the tubular body; and a leak valve that leaks the inert gas inside the tubular body to the outside when the internal pressure of the tubular body is equal to or higher than a set pressure. The gas supply unit has a plurality of supply lines having different amounts of supply of inert gas.
US08835884B2	Charged particle beam apparatus with cleaning photo-irradiation apparatus A charged particle beam apparatus including a charged particle emission gun with which cleaning of a tip is possible without stopping the operation of the charged particle emission gun for a long time and without heating the tip. The charged particle emission gun includes a cleaning photo-irradiation apparatus that generates ultraviolet light or infrared light to irradiate a tip, and an optical fiber for guiding the ultraviolet light or the infrared light toward the tip. The cleaning photo-irradiation apparatus generates ultraviolet light or an infrared light with a predetermined wavelength and intensity to desorb a molecule adsorbed on the tip through photon stimulated desorption, or to desorb a molecule adsorbed on the tip through photon stimulated desorption and ionize the desorbed molecule.
US08835875B2	Detection apparatus and detection method To overcome the disadvantages introduced by using UV sensors to detect the intensity of UV light in water purification apparatuses, a novel detection apparatus to “visualize” the quality of water in the form of visible light, instead of digitizing the intensity of UV light includes s a first detection window, coated with a first material for converting a received first ultraviolet light into a first visible light. The first ultraviolet light is emitted from an ultraviolet light source and traverses the liquid, and the detection apparatus further mixes the first visible light with second visible light to generate a third visible light. The different color of the third visible light can represent the different quality of the water.
US08835874B2	Fluorescing gel formulations and their applications Fluorescing gel formulations are disclosed for monitoring cleaning of a surface. The fluorescing gel formulations are stable, fluoresce under UV light, and do not leave a mark after drying and removal. The compositions include an oppositely charged complexing agent which is used in combination with an anionic or cationic optical brightener. In some embodiments, the compositions include a cationic optical brightener with no complexing agent.
US08835872B2	Sample stage device A sample stage device (10) is so configured as to calculate ideal position information xtg(i), tg(i) per predetermined period that is unaffected by drive conditions relating to gaps (25, 26), etc., and to determine, per predetermined cycle and in real time, deviations dx(i), dy(i) between real-time measured positions x(i), y(i) by position detectors comprising laser interferometers (33, 34), etc., and ideal position information xtg(i), tg(i). In addition, it calculates, based on deviations dx(i), dy(i) thus determined, such speed command values vx(i), vy(i) for motors (27, 28) that measured values x(i), y(i) would follow ideal position information xtg(i), tg(i), and performs stable and high-speed positioning control for a sample table (11) through feedback control that controls speed in real time. Thus, with respect to a sample stage device, it is possible to provide a stable and high-speed positioning control method for a sample table, which is capable of suppressing noise caused by thermal drift and vibration, without being affected by drive conditions, such as the initial states of gaps, etc.
US08835867B2	Multi-axis magnetic lens for focusing a plurality of charged particle beams A cellular-type PD unit is proposed and a plurality of the cellular-type PD units is used in pairs in a multi-axis magnetic lens for focusing a plurality of charged beams. First type PD units or second type PD units (called as hybrid PD unit as well) can be applied to cellular-type PD units to flexibly construct sub-lenses. Furthermore, magnetic shielding plates with a plurality of through openings can be placed above and/or below the multi-axis magnetic lens to make magnetic flux leaking out of the multi-axis magnetic lens vanish away rapidly outside the magnetic shielding plates.
US08835862B2	Radiation image photographing apparatus A radiation image photographing apparatus is provided with a bias source to apply a bias voltage via bias lines to radiation detecting elements arranged in a two dimensional form in regions divided by scanning lines and signal lines. The bias lines are connected to the radiation detecting elements with a ratio of one bias line to the radiation detecting elements arranged on one column in an extension direction of the signal line, and the bias lines are connected per a predetermined number of bias lines to either one of a plurality of connection lines. The bias voltage is applied from the bias source to the connection lines via the bias lines so that the bias voltage is applied to the radiation detecting elements via the bias lines connected to the connection lines.
US08835861B1	Microactuators based on insulator-to-metal transition materials and method of using the same The invention utilizes the changes in physical properties of materials during a solid-solid phase transition in order to actuate microactuators. The substantial changes in properties during insulator-to-metal transitions (IMTs) of some materials are useful for controlling purposes. Methods of using the microactuators are also explained.
US08835857B2	Device for a radiation detector and radiation detector with the device A device for a radiation detector includes a main body, which includes a material G and is at least partially provided with a coating. The coating has at least a first layer with a material A1. The material G of the main body can be excited by a primary radiation impinging on the coating, so that an x-ray fluorescence radiation is produced with an x-ray fluorescence spectrum, which has a maximum MG at an energy EG. Furthermore, at an energy E1, the material A1 has an absorption edge. In this case, the material A1 is chosen such that the relationships E1
US08835850B2	Human body sensing device and image processing apparatus having the same A human body sensing device being mounted on an object comprises: a first and second sensor being mounted on a vertical plane of the object and each having a pair of a positive and negative electrode; and a lens covering over the first and second sensors, wherein: the lens forms a sensing block in a sensing area constituting a plane perpendicular to the vertical plane, the sensing block including the positive and negative electrodes of the first sensor, and the positive and negative electrodes of the second sensor; either a first virtual line or an extended part thereof and either a second virtual line or an extended part thereof have a point of intersection in the sensing area; and the first and second virtual lines are symmetric with respect to a line perpendicular to the vertical plane of the object and passing through the point of intersection.
US08835848B2	Ultra-miniaturized electron optical microcolumn An ultra-miniaturized electron optical microcolumn is provided. The electron optical microcolumn includes an electron-emitting source emitting electrons using a field emission principle, an extraction electrode causing the emission of electrons from the electron-emitting source, a focusing electrode to which voltage is flexibly applied in response to a working distance to a target for regulating a focusing force of electron beams emitted from the electron-emitting source, an acceleration electrode accelerating electrons emitted by the extraction electrode, a limit electrode regulating an amount and a size of electron beams using electrons accelerated by the acceleration electrode, and a deflector deflecting electron beams towards the target.
US08835845B2	In-situ STEM sample preparation A method for TEM/STEM sample preparation and analysis that can be used in a FIB-electron microscope system without a flip stage. The method allows a dual beam FIB electron microscope system with a typical tilt stage having a maximum tilt of approximately 60° to be used to extract a TEM/STEM sample to from a substrate, mount the sample onto a sample holder, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to a vertical electron beam column for TEM/STEM imaging.
US08835839B1	Ion manipulation device An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electric field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area.
US08835836B2	Method of avoiding space charge saturation effects in an ion trap A mass spectrometer includes a first ion trap arranged upstream of an analytical second ion trap. The charge capacity of the first ion trap is set at a value such that if all the ions stored within the first ion trap up to the charge capacity limit of the first ion trap are then transferred to the second ion trap, then the analytical performance of the second ion trap is not substantially degraded due to space charge effects.
US08835834B2	Mass spectrometer and mass spectrometry method An object is to measure both cations and anions with high duty cycle. In a mass spectrometer comprising an ion source (1), an ion guide part (31), and an ion trap (32), while ions are being mass-selectively ejected from the ion trap, ions having a polarity reverse to that of the ions trapped in the ion trap are introduced into the ion guide part.
US08835830B2	Voltage output circuit, connector module, and active cable According to one embodiment, a circuit comprises a first resistor configured to have one end to which a first voltage is input and the other end which outputs a second voltage and a first amplifier configured to have an inverting input connected to the other end of the first resistor and a noninverting input to which a third voltage is input. The circuit further comprises a first capacitor configured to have one end to which an output of the first amplifier is input and the other end to which the other end of the first resistor is connected. An output of the first amplifier or an output of a second amplifier connected to the other end of the first resistor is a fourth voltage. In the circuit, the first resistor and a mirror capacitance composed of the first capacitor and the first amplifier constitute a low-pass filter.
US08835829B2	Image sensor formed by silicon rich oxide material An image sensor includes a light-sensing element, a first transistor, and a second transistor. The light-sensing element has a first end and a second end electrically connected to a select line. The first transistor has a first end electrically connected to a first control line, a control end electrically connected to the first end, and a second end electrically connected to the first end of the light-sensing element. The second transistor has a first end electrically connected to a voltage source, a control end electrically connected to the first end of the light-sensing element, and a second end electrically connected to an output line. The light-sensing element uses the material of silicon rich oxide so that the light-sensing element can sense the luminance variance and have the characteristic of the capacitor for the level boost.
US08835824B2	Method and system for active imaging with a large field The present disclosure relates to an imaging system comprising an impulsion light source for an input light beam oriented toward an observed area and an optoelectronic sensor having a photosensitive surface with a visibility capable of substantially covering the observed area. An impulsion of the incident light beam is backscattered by only by a portion of the observed area into a backscattered spot on the photosensitive surface. A deflection device deflects the impulsions of the incident light beam onto the respective portions of the observed area. A device acquires the thumbnail images corresponding to the backscattered spots resulting in impulsions of the incident light beam. The system combines said thumbnail images to produce an image having a sufficiently high signal-to-noise ratio for portions of interest of the observed area, a high spatial resolution, and a greater insensitivity to motion blurs.
US08835818B2	Self-regulating heater There is disclosed a self-regulating electric heater assembly arranged to heat an electrically conductive substrate such as a flexible substrate of shape memory alloy for use as an actuator. The heater assembly comprises a plurality of substantially rigid PTC elements arranged in spaced-apart relation to one another in a flexible array, said PTC elements each having a contact surface arranged in contact with the substrate and being urged against said substrate so as to remain in contact with the substrate upon flexure of the substrate. The substrate serves as one of a pair of electrical conductors electrically connected to the PTC elements for the supply of electric current to the PTC elements.
US08835815B2	Heater control device, image forming apparatus, and heater controlling method A heater control device comprising: a storage unit that stores therein a turn-on pattern of a heater specified in units of a predetermined control cycle including a plurality of half-wavelengths of an alternating-current voltage supplied to the heater so as to prevent flickering; a color temperature detecting unit that detects a color temperature of light emitted from a filament of the heater; and a heater control unit that, while operating in a standby mode in which power supplied to the heater is reduced, causes the heater to be fully turned ON at every first period, and then turns ON the heater in the turn-on pattern when the color temperature exceeds a predetermined threshold after the heater is fully turned ON.
US08835814B2	Domestic appliance device A domestic appliance device is provided which has an operating means carrier that carries operating means. The operating means carrier is formed by a panel and differs from a hob. The operating means carrier also has a functional support surface to absorb at least a part of the weight force of the operating means in a functionally-coupled state.
US08835812B2	Home appliance with unitary broil element mount and reflector A home appliance having an oven with a broil element, the home appliance including an appliance body; an oven cavity defined within the appliance body; a broil element mounted within the oven cavity; a broil element reflector mounted to a wall of the oven cavity; and a mounting arrangement formed integrally with the broil element reflector for mounting the broil element within the oven cavity.
US08835811B2	Thermal processing apparatus and method of controlling the same A control unit can select a large-number control zone model in which the number of control zones, which are independently controlled, is large, and a small-number control zone model in which the number of control zones, which are independently controlled, is small. When a temperature is increased or decreased, the control unit can select the small-number control zone model so as to control, based on signals from temperature sensors of the respective control zones C1 . . . C5 whose number is small, heaters located on the respective control zones C1 . . . C5. When a temperature is stabilized, the control unit can select the large-number control zone model so as to control, based on signals from the temperature sensors of the respective control zones C1 . . . C10 whose number is large, the heaters located on the respective control zones C1 . . . C10.
US08835810B2	System and method for a programmable counter-top electric dehydrator A system and method directed to a dehydrating device, which may include a dehydrating enclosure and an adapter. The adapter may be operable to couple the dehydrating enclosure to a power unit, which may include a power source disposed inside the power unit, and a control source operable to control the power source. The power unit may be detachably couplable to at least one of the dehydrating enclosure or a cooking enclosure. The power unit and the cooking enclosure may collectively combine into a multi-stage counter-top electric oven. The power unit and the dehydrating enclosure may also collectively combine into a dehydrator. The dehydrating enclosure may include a plurality of stackable dehydrating trays through which dehydrating air is circulated from the power unit.
US08835809B2	Heatable covering system The present invention relates to a heatable covering system for floors, ceilings, and walls. The covering system comprises covering panels which at least on one longitudinal edge comprise coupling means in order to be able to join covering panels with each other wherein the covering panels are provided with electrical heating means and have electrical contacting means in order to electrically contact the panels.
US08835808B2	Apparatus for joining sections of pipe The present invention relates to a method and apparatus to be used when welding two abutting sections of pipe or tubing, and also to purge blocks for establishing a localized inert atmosphere inside two abutting pipe sections in the region of a desired weld joint. The present invention comprises an inflatable bladder with elongated engaging members that can be removable positioned within the ends of two abutting pipe sections in order to center the two abutting sections of pipe and create the purge block.
US08835807B2	Web configuration system for customizing welding systems Embodiments of the present disclosure are also directed to a web-configuration system that includes at least one processor and one or more tangible, machine-readable media at least collectively including or storing instructions executable by the at least one processor. The instructions include a module configured to limit configuration options for a welding system based on user selection of a power source for the welding system, a module configured to calculate a weld cable size for the welding system based on the user selection of the power source and user selection of an input voltage, a module configured to assign weld cable characteristics based on the weld cable size and a user selected cable length, and a module configured to assemble a welding system order based at least on the user selection of the power source and the weld cable characteristics.
US08835805B2	Method for patterning nano particles The invention provides a simple and inexpensive method to assemble nanomaterials into millimeter lengths. The method can be used to generate optical, sensing, electronic, magnetic and or catalytic materials. Also provided is a substrate comprised of fused nanoparticles. The invention also provides a diode comprised of assembled nanoparticles.
US08835796B2	Diffuser shape vent slots in a hand torch shield castellation A torch tip for a plasma arc torch includes a body having a first end, configured to attach to the torch, and a second end, where an end wall is disposed. A plasma exit orifice is formed in the end wall. At least two castellations are formed in the end wall. At least one slot is disposed between two castellations. Each slot is defined by a first and second castellation wall, and a slot floor. The first castellation wall is opposite the second castellation wall. The torch tip has at least one of the following characteristics: a slope of the slot floor within the at least one slot tapers in an outward radial direction relative to the plasma exit orifice toward the first end of the body, or a distance between the first and second castellation walls along the slot floor increases with distance away from the exit orifice.
US08835795B2	Method for implementing spatter-less welding A method for optimizing a schedule for impulse welding including generating a weld lobe using a preexisting welding schedule, the schedule prescribing a current, a weld time, and a pressure; identifying an operating window on the weld lobe; analyzing the operating window, the analysis including determining a maximum time range of the operating window, and determining a maximum current range of the operating window; until (i) the determined maximum time range of the operating window is greater than a predetermined percentage of the prescribed weld time of the schedule and (ii) the determined maximum current range is greater than the prescribed current of the schedule, creating additional weld lobes by varying the pressure and repeating the identifying an operating window and the analyzing the operating window steps; and selecting, within the operating window satisfying conditions (i) and (ii), a second schedule including a second weld time, a second current, and a second pressure.
US08835794B2	Procedure for making a low distortion welded connection In a process to connect components, especially metal components (1, 2), by at least one welding process, the components (1, 2) are at first brought together, or joined together, and are then simultaneously welded together at—at least—two differently located joining spots (3, 4) by a laser welding process and with the aid of robot control.
US08835790B2	Winding for a contact of a medium-voltage vacuum circuit-breaker with improved arc extinction, and an associated circuit-breaker and vacuum circuit-breaker, such as an AC generator disconnector circuit-breaker A design for a winding is based on a material of low electrical resistance, such as copper, and of a diameter typically greater than 90 mm, intended to generate a magnetic field in an electrical contact for a medium voltage vacuum circuit-breaker. The winding includes a hollow cylinder including helical slots that are empty of material, arranged in parallel around its longitudinal axis, and that open out both to the hollow and to the outside of the cylinder. The angular length of each helical slot is equal to at least 360°. The design makes it possible to increase the level of the axial magnetic field (AMF) obtained by the winding(s) incorporated into an electrical contact of a vacuum circuit-breaker while improving uniformity, symmetry of the field, and production cost.
US08835788B2	Slide switch A slide switch includes a housing, a plurality of fixed electrodes, and a slider. The housing includes a first face provided with an accommodating recessed part and a second face configured to be attached to an attaching board. The fixed electrodes are provided in the accommodating recessed part. Each of the fixed electrodes has an external terminal exposed on the second face. The slider has a movable electrode configured to be electrically conducted to the fixed electrodes, and is movably provided in the accommodating recessed part so as to switch an electrical conducted state of the movable electrode and the fixed electrodes.
US08835787B2	Push switch A push switch includes a switch contact part for carrying out electrical connection by pressing, a case having a wall part on a periphery thereof and accommodating the switch contact part in a concave portion surrounded by the wall part, and a protective sheet covering the concave portion. The protective sheet and at least a part of an upper surface of the wall part of the case are welded together as a first welding place.
US08835786B2	Actuating device for a power switch A switch includes a handle for activation and deactivation and an actuating device. The actuating device includes a motor drive, which tensions a spring held in a tensioned state by latching by way of a gear. Two spring pairs are provided for activation and deactivation. The two bridges are arranged, with the spring pairs thereof nested within each other and displaceable with respect to each other. The bridges facing each other are pressed apart from one another to tension the spring pairs, and an actuation element is arranged on the one bridge for activation and an actuation element is arranged on the other bridge for deactivation.
US08835784B2	Push button structure A push button structure includes: a panel 1 in which an opening 2 for exposing a button 7 is provided; a button 7 having a leg of which one end side is supported by a rotational central section 5 of the panel 1 and of which the other end side has a leg 6 extending in an orthogonal direction to the panel 1, wherein the other end side is rotated about the rotational central section 5 when the button is pushed with exposed from the opening 2 of the panel 1; and a board 3 on which a switch 4 is mounted and which is attached at an angle to the panel 1 such that a direction C tangential to a rotational path of the leg 6 is substantially the same as a stroke direction D of the switch 4.
US08835779B2	Coordinated ratiometric compensation for high-precision load-cells Apparatus and associated methods relate to a load-cell measurement system having an output that is substantially independent of the system voltage source, by providing compensation for the source voltage variation using both a compensating offset voltage and a compensating reference voltage, these compensating voltages having a predetermined relationship with each other. In an illustrative example, the supply voltage may be directly connected to a load-cell, an instrumentation amplifier, and a compensation circuit. In some examples, the compensation circuit may include a chain of impedances which may generate two mutually related voltages both being scaled to the supply voltage. The first scaled voltage may, for example, substantially compensate offset of the load-cell measurement system. The second scaled voltage may, for example, substantially compensate for gain. In various examples, the compensating offset voltage and gain voltage may have a predetermined relationship so as to provide coordinated compensation of the system.
US08835775B2	Localized skew compensation technique for reducing electromagnetic radiation Techniques are provided for electrically connecting components on a printed circuit board (PCB), semiconductor chip package, or other electronic device. More specifically, a first component, configured to generate a differential signal, is disposed on the PCB, while a second component, configured to receive the differential signal from the first component, is also disposed on the PCB. A differential conductor pair comprising first and second parallel conductors extends along a path between the first and second components. The path of the differential conductor pair comprises at least one turn that causes a change in direction of the first and second conductors. The first conductor comprises at least one localized skew compensation bend disposed at the turn such that, at the end of the turn, the first and second conductors have substantially the same length with respect to the first component.
US08835772B2	Production method of connection structure In order to lower the substantial heating temperature of a thermosetting adhesive and to realize favorable connection reliability during connecting an electrical element to a circuit board by anisotropic conductive connection with using solder particles, a product in which solder particles having a melting temperature Ts are dispersed in an insulating acrylic-based thermosetting resin having a minimum melt viscosity temperature Tv is used as an anisotropic conductive adhesive in producing a connection structure by connecting the circuit board and the electrical element to each other by anisotropic conductive connection.
US08835771B2	PCB terminal and method for manufacturing the same The invention forms a Sn coating layer and a Cu—Sn alloy coating layer having a suitably controllable planar shape in a PCB terminal. A group of Sn coating layers being as a plurality of essentially parallel lines is formed as the surface coating layer, and a Cu—Sn alloy coating layer 2 is exposed on the outermost surface on both sides of Sn coating layers each constituting the group of Sn coating layers. The Sn coating layers have a width of 1 to 500 μm, an interval between adjacent Sn coating layers is 1 to 20000 μm, and an outermost maximum height roughness in a terminal insertion direction is at most 10 μm.
US08835770B2	Electronic component and method for manufacturing the same An electronic component that includes an electronic component body, sealing members sealing the electronic component body, and adhesive layers which adhere the electronic component body and the sealing members, respectively. Between the electronic component body and the sealing members, sealed spaces are formed, respectively. The adhesive layers each contain organic fillers and inorganic fillers. The organic fillers are in contact with both the electronic component body and the sealing members. The inorganic fillers each have a minimum particle diameter smaller than the thickness of each of the adhesive layers. When the adhesive layers are viewed in a thickness direction thereof, the inorganic fillers are provided between the organic fillers and the electronic component body and between the organic fillers and each of the sealing members.
US08835766B2	Audio/video cable An audio/video cable includes a plurality of parallel arranged insulated wires or twisted pair insulated wires each including a copper conductor and an insulation layer formed on a periphery thereof. The copper conductor includes a soft dilute copper alloy material containing pure copper, an additive element and an inevitable impurity as a balance. The soft dilute copper alloy material includes a recrystallized structure having a grain size distribution such that crystal grains in a surface layer are smaller than internal crystal grains. The surface layer includes a crystal structure such that an average crystal grain size from a surface of the surface layer up to a depth of 50 μm toward inside of the soft dilute copper alloy material is not more than 20 μm.
US08835765B2	FEP modification using titanium dioxide to reduce skew in data communications cables A cable is provided with a first twisted pair of insulated conductors having a first lay length and a first insulation resulting in a first signal propagation rate and a second twisted pair of insulated conductors having a second lay length and a second insulation resulting in a second signal propagation rate. The second signal propagation rate is faster than the first signal propagation rate resulting a first amount of signal skew between signals travelling through the first twisted pair and the second twisted pair. A jacket covers the pairs. Titanium dioxide is added to the insulation of the conductors of the second twisted pair so that the dielectric constant of the insulation of the conductors of the second twisted pair is raised, lowering the second signal propagation rate, resulting in a second amount of signal skew which is less than the first amount of signal skew.
US08835764B2	Universal receptacle faceplate assembly Systems and other embodiments associated with a universal faceplate assembly are described. According to one embodiment, a faceplate includes a substantially planar plate base configured to mount on a wiring enclosure. At least one opening in the plate base is configured receive a receptacle. The opening is configured to receive receptacles of a first receptacle type or a second receptacle type. The faceplate also includes a faceplate notch in a front surface of the plate base configured to receive a receptacle tab. The receptacle tab is disposed on receptacles of the first receptacle type or the second receptacle type. The receptacle tab is configured to allow a fastener to pass through the faceplate notch and the receptacle tab to attach the receptacle to the faceplate.
US08835761B2	Sealing structure To minimize thermal influence when integrally forming the sealing member on a flexible wiring board, a sealing structure includes a housing, a flexible wiring board inserted therethrough, and a sealing member integrally formed with the flexible wiring board to airtightly seal a gap between the housing and the flexible wiring board, the flexible wiring board includes a base substrate made of an elastic material, an electrically conductive printed wiring layer formed on a surface of the base substrate, and a cover film covering a surface of the printed wiring layer, and the printed wiring layer which crosses the sealing member is formed as a plurality of divided print wiring layers at only a crossing region with the sealing member and its vicinity.
US08835758B2	Electronic device with connector An electronic device includes an enclosure body, a mounting apparatus, a securing apparatus, and a connector. The connector defines an engaging hole. The mounting apparatus includes a receiving housing and a first elastic member mounted in the receiving housing. The securing apparatus includes a sliding member mounted to the receiving housing and an engaging member. The engaging member is secured between the receiving housing and the sliding member. The engaging member is engaged in the engaging hole in a first position. The connector is received in the receiving housing and the first elastic member is compressed between the receiving housing and the connector in the first position. The connector moves out of the receiving housing from the first position to a second position when the sliding member slides relative to the receiving housing, to drive the engaging member to disengage from the engaging hole.
US08835757B2	Locking subgrade vault A subgrade vault system and method of forming the same is provided. Specifically, a subgrade vault suitable for housing utility and similar equipment is provided, the vault comprising a main body portion, a cap, and a lid that may be selectively secured to prevent or deter unauthorized access to vault contents.
US08835755B2	Dye-sensitized solar cell, and electrode and laminated film for the same A laminated film comprising a porous semiconductor layer, a transparent conductive layer and a transparent plastic film, wherein the porous semiconductor layer comprises crystalline titanium oxide fibers and crystalline titanium oxide fine particles, the crystalline titanium oxide fibers and the crystalline titanium oxide fine particles are substantially composed of an anatase phase and a rutile phase, the anatase phase content ratio calculated from the integral intensity ratio of X-ray diffraction is between 1.00 and 0.32, and the laminated film is used in an electrode for dye-sensitized solar cells, and the electrode and a dye-sensitized solar cell comprising the same.
US08835753B2	Solar cell and method of fabricating the same A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.
US08835752B2	Solar cells and method of making solar cells A multi-junction photovoltaic cell includes at least two P-N junctions electrically connected to each other in series. Each P-N junction includes a P-type absorber layer and a N-type emitter layer, each P-type absorber layer including a plurality of alternating thin film layers of zinc telluride and lead telluride, wherein zinc telluride and lead telluride have respective bandgaps when in bulk thickness and the effective bandgap of each P-type absorber layer is between the respective bandgaps. The effective bandgap of at least one P-type absorber layer is different from that of at least one other P-type absorber layer.
US08835750B2	Multilayer composite films and articles prepared therefrom The present invention is an optically transparent laminate film comprising: at least three layers of film, wherein at least two of the at least three layers comprise ionomeric films, and wherein the film can be suitable for use in a photovoltaic cell or in packaging.
US08835748B2	Multi-junction PV module A photovoltaic device is provided which includes a plurality of junction layers. Each junction layer includes a plurality of photovoltaic cells electrically connected to one another. At least one of the junction layers is at least in part optically transmissive. The junction layers are arranged in a stack on top of each other.
US08835745B2	Supplemental solar energy collector A supplemental solar energy collection system including a photovoltaic panel which converts incident radiation into electricity. A housing includes a top thermally conductive surface mated with the photovoltaic panel and serving as a thermal collector. Open channels behind the thermally conductive surface carry fluid in contact with the top thermally conductive surface for removing heat from the photovoltaic panel.
US08835744B2	Solar cell module A solar cell module having a solar cell panel with strings of electrically-coupled solar cells arranged in a row includes one or more lead wires that electrically couple the strings and a junction box. The one or more lead wires are arranged such that they do not overlap with each other and such that one or more of the lead wires includes a portion that overlaps and does not electrically connect to interconnector of a string. The lead wires include an interconnector connection part connected to a respective string interconnector, and the interconnector connection parts of the lead wires are arranged in a straight line.
US08835740B2	Video game controller A controller configured to interactively control images, such as visual images including video images in interactive-multi-media including video games and the like. In one preferred embodiment, a controller is configured to generate a plurality of electromagnetic beams, whereby the user may selectively interrupt one or more of the electromagnetic beams to generate, control, or manipulate a visual image, rendered on a display. Advantageously, the user may control the visual image without having to physically depress buttons, to control one or more visual subjects.
US08835737B2	Piano tablature system and method A piano tablature includes tab keys indicating a new measure where the tab keys display a standard piano keyboard. Middle C on a piano keyboard is highlighted. A tab measure includes note indicators for a selected song. The first beat of a tab measure is indicated by the bottom horizontal line of the tab header and each horizontal line of the tab measure below the bottom horizontal line represents a new beat in the measure, the placement of the note indicator can be traced vertically to a tab header to a corresponding note. White keys are represented by placing a note indicator between 2 vertical lines in the tab measure and black keys are represented by placing a note indicator directly on a vertical line. A piano tab is read from top to bottom.
US08835732B2	Tone control device Provided is a tone control device coupled to a musical instrument including a plurality of pipes capable of generating tones with differing pitches for keys, wherein the pipes are arranged in rows, comprising: a tone generation device that generates tone; a pipe designation device that designates a specified pipe among the pipes installed; and a control device that causes the tone generation device to generate a substituting tone corresponding to the specified pipe when a depressed key comprising one of the keys corresponds to the specified pipe designated by the pipe designation device, and the specified pipe is a pipe belonging to one of the rows of pipes designated as a tone generation subject for the depressed key.
US08835730B2	Latch for travel guitar with hinged neck The inventive folding guitar comprises a guitar body and a guitar neck which includes a fretboard. A hinge connects the guitar neck to the guitar body. The hinge is configured to enable the guitar neck to pivot relative to the guitar body. A securing means for selectively securing the guitar neck to the guitar body that prevents the guitar neck from pivoting relative to the guitar body. A guitar neck angle adjusting means for adjusting an angle of the guitar neck relative to the guitar body is provided so that a height of a guitar string relative to the fretboard can be adjusted.
US08835729B2	Plants and seeds of corn variety CV185675 According to the invention, there is provided seed and plants of the corn variety designated CV185675. The invention thus relates to the plants, seeds and tissue cultures of the variety CV185675, and to methods for producing a corn plant produced by crossing a corn plant of variety CV185675 with itself or with another corn plant, such as a plant of another variety. The invention further relates to corn seeds and plants produced by crossing plants of variety CV185675 with plants of another variety, such as another inbred line. The invention further relates to the inbred and hybrid genetic complements of plants of variety CV 185675.
US08835727B2	Plants and seeds of corn variety CV960250 According to the invention, there is provided seed and plants of the corn variety designated CV960250. The invention thus relates to the plants, seeds and tissue cultures of the variety CV960250, and to methods for producing a corn plant produced by crossing a corn plant of variety CV960250 with itself or with another corn plant, such as a plant of another variety. The invention further relates to corn seeds and plants produced by crossing plants of variety CV960250 with plants of another variety, such as another inbred line. The invention further relates to the inbred and hybrid genetic complements of plants of variety CV960250.
US08835726B2	Plants and seeds of corn variety CV622302 According to the invention, there is provided seed and plants of the corn variety designated CV622302. The invention thus relates to the plants, seeds and tissue cultures of the variety CV622302, and to methods for producing a corn plant produced by crossing a corn plant of variety CV622302 with itself or with another corn plant, such as a plant of another variety. The invention further relates to corn seeds and plants produced by crossing plants of variety CV622302 with plants of another variety, such as another inbred line. The invention further relates to the inbred and hybrid genetic complements of plants of variety CV622302.
US08835725B2	Plants and seeds of corn variety CV832231 According to the invention, there is provided seed and plants of the corn variety designated CV832231. The invention thus relates to the plants, seeds and tissue cultures of the variety CV832231, and to methods for producing a corn plant produced by crossing a corn plant of variety CV832231 with itself or with another corn plant, such as a plant of another variety. The invention further relates to corn seeds and plants produced by crossing plants of variety CV832231 with plants of another variety, such as another inbred line. The invention further relates to the inbred and hybrid genetic complements of plants of variety CV832231.
US08835715B1	Plants expressing Δ6-desaturase genes and oils from these plants containing PUFAS and method for producing unsaturated fatty acids The present invention relates to an improved process for the preparation of unsaturated fatty acids and to a process for the preparation of triglycerides with an increased content of unsaturated fatty acids. The invention relates to the generation of transgenic organism, preferably of a transgenic plant or of a transgenic microorganism, with an increased content of fatty acids, oils or lipids with Δ6 double bonds owing to the expression of a moss Δ-6-desaturase [sic].The invention furthermore relates to transgenic organisms comprising a Δ6-desaturase gene, and to the use of the unsaturated fatty acids or of the triglycerides with an increased content of unsaturated fatty acids prepared in the process.
US08835713B1	Maize variety hybrid X08B733 A novel maize variety designated X08B733 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X08B733 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X08B733 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X08B733, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X08B733. This invention further relates to methods for producing maize varieties derived from maize variety X08B733.
US08835709B2	Articles containing nanofibers produced from low melt flow rate polymers The present invention is directed to hygiene articles comprising nanofibers. The nanofibers are made from a melt film fibrillation process with a polymer composition having a melt flow rate of less than about 400 decigram per minute. The nanofibers, having a diameter of less than 1 micron, must comprise a significant number of the fibers in one layer of the web contained by the hygiene article. The hygiene articles include diapers, training pants, adult incontinence pads, catamenials products such as feminine care pads and pantiliners, tampons, personal cleansing articles, personal care articles, and personal care wipes including baby wipes, facial wipes, and feminine wipes.
US08835704B2	Thermal treatment of biomass A biomass pyrolysis process is provided in which biomass feedstock is mixed with a heat carrier. The heat carrier at least partly comprises char. The ratio by weight of biomass to char is in the range 1:1 to 1:20. The process may be carried out by in a screw/auger pyrolysis reactor in which the solid feedstock components are conveyed along the reactor by a first screw. A second screw conveys at least a portion of the solid products of the biomass pyrolysis back to a heat transfer medium input port. Thus, the heat transfer medium includes char from the biomass pyrolysis.
US08835703B2	Method for the production of one or more olefins, an olefin, and a polymer The present invention describes a method for the production of one or more olefins from the residue of at least one renewable natural raw material. The present invention is advantageously related to a method that is integrated with a processing method for processing renewable natural agricultural raw materials for the production of propylene, and optionally of ethylene and butylene, mainly from the residues of the processed renewable natural agricultural raw material. The propylene is obtained from the gasification reaction of the lignocellulosic materials and of other organic products contained in the raw material residues, followed by the formation of methanol and its subsequent transformation into propylene, where this route may further generate ethylene and/or butylene as by-products.
US08835702B2	Method for mitigating the formation of by-products during the production of haloalkane compounds Disclosed is a process for the manufacture of haloalkane compounds, and more particularly, an improved process for the manufacture of the compound 1,1,1,3,3-penta-chloropropane (HCC-240fa), which mitigates the formation of by-products from vinyl chloride (CH2═CHCl). The present invention is also useful in the manufacture of other haloalkane compounds such as HCC-250 and HCC-360. One embodiment of the invention comprises a method for mitigating 1,1,3,3,5,5-hexachloropentane and 1,1,1,3,5,5-hexachloropentane formation in the HCC-240fa manufacturing process, in which FeCl3, is introduced to a reactor only after the start-up phase has ended and a continuous operation has started. In a preferred embodiment, “pre-chelated” FeCl3, which is concentrated in a catalyst recovery column, is introduced to reactor after the continuous operation has started.
US08835699B2	Process for preparing R-1234yf by base mediated dehydrohalogenation The invention relates to a process for preparing 2,3,3,3-tetrafluoropropene (CF3CF═CH2), performed using the steps of dehydrohalogenating 1,1,1,2,2-pentafluoropropane (CH3CF2CF3, HFC-245ca) 1,1,1,2-tetrafluoro-2-chloropropane, 1,1,1,2,3-pentafluoropropane (CH2FCHFCF3, HFC-245eb) and/or 1,1,1,2-tetrafluoro-3-chloropropane in the presence of a base, and converting a trifluorodichloropropane or a difluorotrichloropropane or a fluorotetrachloropropane to CH3CF2CF3, 1,1,1,2-tetrafluoro-2-chloropropane, CH2FCHFCF3, and/or 1,1,1,2-tetrafluoro-3-chloropropane.
US08835697B2	Biphenyl derivative, resist bottom layer material, bottom layer forming method, and patterning process A biphenyl derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and x and z each are 0 or 1. A material comprising the biphenyl derivative or a polymer comprising recurring units of the biphenyl derivative is spin coated and heat treated to form a resist bottom layer having improved properties, optimum values of n and k, step coverage, etch resistance, heat resistance, solvent resistance, and minimized outgassing.
US08835694B2	Process for transformation of lignocellulosic biomass or cellulose by catalysts based on tin oxide and/or antimony oxide and a metal that is selected from the groups 8 to 11 The invention relates to a process for transformation of lignocellulosic biomass or cellulose using heterogeneous catalysts that are based on tin oxide and/or antimony oxide, dispersed on a substrate and containing at least one element in the particular metal state. The use of these catalysts makes it possible to obtain directly upgradable products, in particular hydroxyacetone and propylene glycol with high selectivity.
US08835690B2	Process for the production of amino alcohols The present invention relates to a process for the manufacture of APD and N-alkyl-APD wherein 1-CPD is reacted with aqueous ammonium or aqueous alkyl-amine under alkaline conditions and where the process is conducted in a continuous manner in a reactor comprising a tubular reactor wherein at least two reaction zones are established.
US08835686B2	Controlled assembly of charged nanoparticles using functionalized graphene nanomesh A method, an apparatus and an article of manufacture for attracting charged nanoparticles using a graphene nanomesh. The method includes creating a graphene nanomesh by generating multiple holes in graphene, wherein each of the multiple holes is of a size appropriate to a targeted charged nanoparticle, selectively passivating the multiple holes of the graphene nanomesh to form a charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting the target charged nanoparticle to the oppositely charged ring to facilitate docking of the charged nanoparticle to the graphene nanomesh.
US08835682B2	Alkaloid aminoester derivatives and medicinal composition thereof Alkaloid aminoester compounds which act as muscarinic receptor antagonists are useful for the prevention and/or treatment of a broncho-obstructive or inflammatory diseases.
US08835679B2	Process for the preparation of 2,4,5-trifluorophenylacetic acid The present invention relates to a new process for the preparation of 2,4,5-trifluorophenylacetic acid and salts thereof by new synthetic intermediates.
US08835677B2	Methods for producing aminonitrobenzoic acids Methods of producing aminonitrobenzoic acids are disclosed. A dinitrobenzoic acid may be reduced to an aminonitrobenzoic acid. In some specific embodiments, 2,6-initrobenzoic acid may be converted to 2-amino-6-nitrobenzoic acid. An end product may be used as an intermediate in the manufacture of various compounds including agricultural chemicals and pharmaceuticals.
US08835673B2	Process for preparing isocyanates Process for preparing aromatic isocyanates by reacting the corresponding formamides with an oxygen-comprising gas over noble metal catalysts at temperatures of from 300 to 600° C. and a contact time of from 1 to 1000 ms, wherein: a. the formamide is vaporized before entering the reaction zone, b. the reaction mixture obtained is quenched with an alcohol-comprising quenching liquid and c. the urethane formed is dissociated into isocyanate and alcohol.
US08835666B2	Pre calcination additives for mixed metal oxide ammoxidation catalysts A process for preparation of catalysts for the production of acrylonitrile, acetonitrile and hydrogen cyanide comprising contacting at an elevated temperature, propylene, ammonia and oxygen in the vapor phase in the presence of a catalyst, said catalyst comprising a complex of metal oxides wherein a heat-decomposable nitrogen containing compound is added during the process for the preparation of the catalyst.
US08835661B2	Process for the synthesis of C11 and C12 omega-aminoalkanoic acid esters comprising a nitrilation step A process for the synthesis of C11 and C12 ω-amino-alkanoic acid esters including a step of continuous nitrilation in the gas phase or in a mixed gas-liquid phase, a step of metathesis and a step of reduction by hydrogenation, using, as raw material, C10 and C11 ω-alkenoic acid esters.
US08835660B2	Method for extracting organic compounds from aqueous mixtures The invention provides a method to extract organic compounds from aqueous mixtures, using a specially selected organic compound as an extraction liquid. The method can be applied to remove compounds such as acetic acid or ethanol from complex aqueous mixtures, including fermentation reactions or broths, and can be used for in situ extraction of products or by-products from a fermentation reaction. Some suitable extraction liquids for use in these methods include diethylene glycol dibutyl ether, tripropionin, and di(ethylene glycol) diisobutyl ether.
US08835657B2	Cyclopentanedione compounds and their use as insecticides, acaricides and/or fungicides The present invention relates to the use of compounds of Formula (I) wherein R1, R2, R3, R4, R5, R6, R7, R3, R9, R10, R11, R12 and G have the meanings given above as insecticides and/or acaricides and/or fungicides.
US08835653B2	Chlorothiophene-isoxazoles as inhibitors of coagulation factors Xa and thrombin The present invention relates to compounds of the formula I, wherein R1; R2; R3; R4; R5, R16, X and M have the meanings indicated in the claims. The compounds of formula I are valuable pharmacologically active compounds. They exhibit a strong anti-thrombotic effect and are suitable, for example, for the therapy and prophylaxis of cardio-vascular disorders like thromboembolic diseases or restenoses. They are reversible inhibitors of the blood clotting enzymes factor Xa and thrombin and can in general be applied in conditions in which an undesired activity of factor Xa and/or thrombin are present or for the cure or prevention of which an inhibition of factor Xa and thrombin are intended. The invention furthermore relates to processes for the preparation of compounds of the formula I, their use, in particular as active ingredients in pharmaceuticals, and pharmaceutical preparations comprising them.
US08835647B2	2-((R)-2-methylpyrrolidin-2-yl)-1H-benzimidazole-4-carboxamide crystalline form 1 2-((R)-2-Methylpyrrolidin-2-yl)-1H-benzimidazole-4-carboxamide Crystalline Form 1, ways to make it, compositions comprising it and made using it, and methods of treating patients having disease using it are disclosed.
US08835643B2	Molecules, compositions, and methods for light absorption Embodiments provided herein relate to molecules, compositions, and methods for light absorption. In some embodiments, the molecules and/or compositions can be used to absorb ultraviolet light. In some embodiments, the ultraviolet light absorption compound can be used in a sunscreen composition. In some embodiments, the compound includes an azobenzene group for the absorption of ultraviolet light.
US08835636B2	Method for producing dichloropyrazine derivative A method for producing a hydroxypyrazine derivative represented by formula (I) (wherein R1 represents a halogen atom), the method including reacting a pyrazine derivative represented by formula (III) (wherein R2 represents a nitrile group, an N-unsubstituted or N-substituted carbamoyl group, an ester group or a carboxyl group, M represents a cation capable of forming a salt, and n represents a number corresponding with the valence of M) with a halogenating agent. According to the present invention, a hydroxypyrazine derivative that functions as a production intermediate for the dichloropyrazine derivative can be produced efficiently at low cost.
US08835635B2	Amorphous form of vilazodone hydrochloride substantially free of crystalline forms Disclosed herein is a stable amorphous form of vilazodone hydrochloride substantially free of crystalline forms, a process for the preparation, pharmaceutical compositions, and methods of treating thereof. Disclosed also herein are stable amorphous co-precipitates of vilazodone hydrochloride and a pharmaceutically acceptable excipient, methods for the preparation, pharmaceutical compositions, and method of treating thereof.
US08835633B2	Process for the preparation of benzoimidazol-2-yl pyrimidine derivatives The present invention is directed to benzoimidazol-2-yl pyrimidine derivatives useful as histamine H4 receptor modulators and processes for the preparation of such compounds.
US08835631B2	Therapeutic agent for cerebral infarction The present invention provides a novel therapeutic drug for cerebral infarction, which contains a piperazine compound as an active ingredient.The compound of the present invention can be provided as a novel therapeutic drug for cerebral infarction having an effect of suppressing brain injury volume or improving neurological deficit, since it suppresses production of plural inflammatory cytokines and chemokines present in the brain such as TNF-α, IL-1β, IL-6 and MCP-1 and the like.
US08835630B1	Acyclic nucleoside phosphonate diesters The present disclosure relates, inter alia, to compositions and methods for treating viral diseases and cancer. There are disclosed lipophilic antiviral and anticancer acyclic nucleoside phosphonate diesters, preparation thereof, and methods of using the compounds to treat viral diseases and cancer.
US08835627B2	Process for the synthesis of ivabradine and addition salts thereof with a pharmaceutically acceptable acid Process for the synthesis of ivabradine of formula (I): and addition salts thereof with a pharmaceutically acceptable acid.
US08835621B2	Synthetic 5'UTRs, expression vectors, and methods for increasing transgene expression The present invention provides synthetic 5′UTRs comprising a first polynucleotide fragment and a second polynucleotide fragment, wherein the first polynucleotide fragment comprises at least one splice site of a first eukaryotic gene, the second polynucleotide fragment comprises at least a portion of 5′ untranslated region of a second eukaryotic gene, and the first polynucleotide fragment is located 5′ of the second polynucleotide fragment. In one embodiment, the first polynucleotide fragment comprises the second intron of a sarcoplasmic/endoplasmic reticulum calcium ATPase gene and the second polynucleotide fragment comprises at least a portion of the 5′ untranslated region (5′UTR) of a eukaryotic casein gene. The synthetic 5′UTRs are useful for increasing the expression of a transgene when positioned between a promoter and a transgene within an expression vector. The present invention also provides vectors comprising synthetic 5′UTRs and methods for increasing the expression of a transgene using synthetic 5′UTRs.
US08835620B2	Vaccines against multiple subtypes of dengue virus An aspect of the present invention is related to nucleic acid constructs capable of expressing a polypeptide that elicits an immune response in a mammal against more than one subtype of dengue virus, and methods of use thereof. Additionally, there are DNA plasmid vaccines capable of generating in a mammal an immune response against a plurality of dengue virus subtypes, comprising a DNA plasmid and a pharmaceutically acceptable excipient, and methods of use thereof. The DNA plasmid is capable of expressing a consensus dengue antigen in a cell of the mammal in a quantity effective to elicit an immune response in the mammal.
US08835617B2	Polynucleotides encoding a human TRIM-Cyp fusion polypeptide, compositions thereof, and methods of using same A nucleic acid is provided which encodes a human TRIM-cyclophilin A fusion sequence encoding a human TRIM-CypA fusion protein which is active as an anti-viral agent, and in particular, as an anti-HIV-1 agent. Also provided is a nucleic acid encoding a polypeptide having both TRIM activity and cyclophilin activity. Also provided is an isolated polynucleotide encoding a human TRIM-CypA fusion protein, or variants thereof retaining the TRIM and cyclophilin A activities. Also provided are compositions thereof, antibodies that specifically bind thereto, and vectors and host cells comprising the nucleic acid or polypeptide. In addition, methods are provided for treating or preventing viral infection, or reducing viral load in a subject comprising administering the nucleic acid, polypeptide, vector, or composition to the subject in an amount effective to treat or prevent the viral infection. In some embodiments, the viral infection is HIV-I infection, hepatitis C infection, pox virus infection, vaccinia virus infection, or HTLV infection.
US08835615B2	2′-fluorine-4′-substituted-nucleoside analogues, preparation methods and uses thereof The present invention provides 2′-fluorine-4′-substituted-nucleoside analogs or their pro-drugs or 5′-phosphate esters (including the pro-drugs of the 5′-phosphate esters), preparation methods and uses thereof. The compounds have the general formula as follows: wherein: The compounds are used in the synthesis of drugs for the treatment of virus infection, especially for the treatment of HBV, HCV or HIV infection.
US08835614B2	Oligosaccharide-protein conjugates Provided herein are conjugates comprising a protein and an oligosaccharide of one of Formulae I-VI. Also provided herein are pharmaceutical compositions comprising such conjugates. Further provided herein are methods of treating a lysosomal storage disorder in a mammal by administration of an oligosaccharide-glycoprotein conjugate.
US08835612B2	Isolation of phosphoproteins, glycoproteins and fragments thereof The invention provides methods and apparatus for the selective isolation of phosphorylated and glycosylated proteins and their fragments. Metal cation is used to precipitate proteins or protein fragments containing phospho groups and/or glyco groups. The sample preparation method can be used for several types of biological samples, including HeLa cells, food, and human cerebrospinal fluid. The proteins are isolated, recovered and ready for analysis by mass spectrometry or other analytical methods allowing detection limits down to the femtomole level. The method and apparatus are valuable tools in the field of protein analysis and diagnostics.
US08835608B2	Anti-MRP3 antibodies and methods of use An antibody having an antigen binding region capable of binding an epitope located in an extracellular portion of MRP3 and methods of utilizing same are provided. In particular, the invention provides antibodies targeted at a MRP3 antigen present on cells expressing MRP3 and methods useful in detecting or targeting cells expression the MRP3 antigen, as well as kits, nucleic acids, polypeptides, and cells for providing the antibodies.
US08835604B2	Antimicrobial peptide variants and polynucleotides encoding same The present invention relates to variants of a parent antimicrobial peptide. The present invention also relates to polynucleotides encoding the variants; nucleic acid constructs, vectors, and host cells comprising the polynucleotides; and methods of using the variants.
US08835601B2	Natriuretic polypeptide delivery systems This document provides natriuretic polypeptide delivery systems. For example, methods and materials related to natriuretic polypeptide delivery systems, methods and materials related to the use of such delivery systems to deliver natriuretic polypeptides to a mammal over a pro-longed period of time (e.g., weeks to months), and methods and materials related to treating heart failure conditions are provided.
US08835600B2	Process of forming an aramid copolymer The invention concerns processes for forming a polymer comprising residues of 2-(4-amino phenyl)-5 (6) amino phenyl benzimidazole (DAPBI), paraphenylene diamine, and terephthaloyl dichloride, comprising the steps of: a) forming a solution of DAPBI and paraphenylene diamine dihydrochloride in a solvent system comprising an organic solvent and an inorganic salt; b) cooling the solution to a temperature of 30° C. or less; c) adding a stoichiometric amount of terephthaloyl dichloride, relative to the total amount of the DAPBI and the paraphenylene diamine dihydrochloride, to the solution; and d) agitating the solution of step c) to form a polymer.
US08835598B2	Conjugated polymers and their use in optoelectronic devices The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.
US08835596B2	Method for producing polyamide A method of producing polyamide by the direct polycondensation of a diamine component and a dicarboxylic acid component without using a solvent, such as water. The diamine component containing 70 mol % or more of p-xylylenediamine is added to a reaction system containing the dicarboxylic acid component under pressure while maintaining the reaction system in a molten state. After the addition of the diamine component, the pressure of the reaction system is reduced to atmospheric pressure over 50 min or more at a pressure falling speed of 1.0 MPa/h or less. By the production method, polyamide with a small molecular weight dispersion is easily produced.
US08835595B2	Polyamide compound A polyamide compound containing: from 25 to 50 mol % of a diamine unit, which contains an aromatic diamine unit represented by the following formula (I), in an amount of 50 mol % or more; from 25 to 50 mol % of a dicarboxylic acid unit, which contains a linear aliphatic dicarboxylic acid unit represented by the following formula (II-1) and/or an aromatic dicarboxylic acid unit represented by the following formula (II-2), in an amount in total of 50 mol % or more; and from 0.1 to 50 mol % of a constitutional unit represented by the following formula (III): wherein n represents an integer of from 2 to 18, Ar represents an arylene group, and R represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group.
US08835591B2	Method for preparing polyurethane prepolymers containing isocyanate groups The present invention relates to the technical field of isocyanates. The present invention provides a method for preparing NCO prepolymers by reacting a stoichiometric excess of an organic isocyanate with an isocyanate-reactive component, the reaction components being mixed together and the mixture being introduced directly into a storage or transport vessel, where it reacts to completion.
US08835587B2	Catalyst system, process for olefin polymerization, and polymer compositions produced therefrom Provided are catalyst systems, processes for polymerizing one or more olefins, polymers resulting therefrom, and articles prepared from such polymers. The processes comprise contacting under polymerization conditions one or more olefin monomers, preferably propylene, with a catalyst system comprising a transition metal compound and an activator of the formula (1) or (2) as described herein. The polymer compositions described herein exhibit advantageously narrow composition distributions and high melting points in comparison to conventional polymers having the same comonomer content. The polymers described herein exhibit improved properties, e.g., pellet stability, impact properties, heat seal properties, and structural integrity in film and fabricated parts applications.
US08835584B2	Copolymer and method for manufacturing the same In one embodiment of the disclosure, a copolymer and method for manufacturing the same are provided. The copolymer is copolymerized from a composition including: (a) a first hydrophilic monomer, including itaconamic acid, itaconamic salt, or combinations thereof; and (b) a second hydrophilic monomer, including acrylic acid, acrylic salt, acrylamide, or combinations thereof.
US08835583B2	Free radical polymerizable compositions comprising ionic silicones A composition including an actinic radiation or thermally curable polyorganosiloxane ionomer having one or more reactive groups, for example, vinyl, acrylate, epoxy groups.
US08835580B2	Catalyst for norbornene monomer polymerization and method for producing norbornene polymer The invention relates to a catalyst for the polymerization of norbornene monomers comprising transition metal complex (A) represented by formula (1); and a method for producing a norbornene (co)polymer, especially a norbornene copolymer containing a monomer unit represented by formulae (2) and (3), wherein a norbornen monomer is homopolyzed or copolymerized in the presence of the polymerization catalyst. Preferable examples of the transition metal complex (A) include (π-allyl){4-(2,6-diisopropylphenylimino)-2-penten-2-olato-κ2N,O}palladium and (π-allyl){4-(1-naphthylimino)-2-penten-2-olato-κ2N,O}palladium. In the formulae, the symbols are as defined in the description. A norbornene (co)polymer which has excellent transparency, excellent heat resistance, excellently low water absorption and excellent electrical insulation characteristics can be efficiently produced by the present invention.
US08835579B2	Process for polymerising (hetero)aromatic compounds The present invention relates to a process for polymerizing (hetero)aromatic compounds under formation of aryl-aryl C—C couplings for preparing conjugated polymers with high molecular weight and high regioregularity, and to novel polymers obtainable by this process. The invention further relates to the use of the novel polymers as semiconductors or charge transport materials in optical, electrooptical or electronic devices including field effect transistors (FETs), thin film transistors (TFT), electroluminescent, photovoltaic and sensor devices.
US08835573B2	Biodegradable composite system and the use thereof The invention relates to a composite system comprising at least one biodegradable blend, containing at least one biodegradable block copolyester urethane (PEU) and also at least one polyhydroxyalkanoate (PHA), possibly a filler comprising a polysaccharide and/or derivatives thereof and also possibly further biocompatible additives. Composite systems of this type are used for producing molded articles, molded parts or extrudates. Furthermore, the invention relates to possibilities for using the composite system.
US08835572B2	Aluminum chelate latent curing agent A novel aluminum chelate latent curing agent that can cure a glycidyl ether epoxy compound at a lower temperature and more quickly than an aluminum chelate latent curing agent produced by emulsification and interfacial polymerization of a polyfunctional isocyanate in the presence of both a radical polymerizable monomer, such as divinyl benzene, and a radical polymerization initiator, is micro-encapsulated in a core-shell form, wherein an aluminum chelate curing agent and a cationic polymerizable compound are included in a capsule formed from an interfacial polymerization product of a polyfunctional isocyanate.
US08835571B2	Fatty acid derivative-polymer conjugate A fatty acid derivative-polymer conjugate including a conjugate comprising a fatty acid derivative and an alkyl substituted polylactide compound is provided. A pharmaceutical composition comprising the conjugate is also provided.
US08835570B2	Hydrophilic material, medical material and sustained drug release material A hydrophilic material having a hydrophilic nature and being biocompatible and processable into nanoparticles wherein a hydrophilic monomer such as threitol or a hydrophilic polymer such as polyethylene glycol is attached to the βposition of an α,β-unsaturated carboxyl group of a (co)polymer comprising an aromatic compound such as 4-hydroxycinnamic acid in which an aromatic ring is substituted by the α,β-unsaturated carboxyl group and one or more hydroxyl groups. In particular, a hydrophilic material having a nanoparticle size which is highly dispersible in water, can well migrate into the blood and is useful as a drug carrier, a medical material and a sustained drug release material.
US08835568B2	Propylene polymer compositions A propylene polymer composition comprising (percent by weight):A) 65%-85% of a propylene copolymer containing from 2.0% to 5.0% of ethylene derived units having MFR L (Melt Flow Rate according to ASTM 1238, condition L, i.e. 230° C. and 2.16 kg load) from 0.5 to 50 g/10 min and a melting temperature Tm ranging from 146° C. to 155° C.; B) 15%-35%, of a copolymer of ethylene and propylene with from 74% to 87%, of ethylene derived units; the composition having the intrinsic viscosity of the fraction soluble in xylene ranging from 0.8 to 1.2 dl/g preferably from 0.9 to 1.1 dl/g.
US08835564B2	Method for producing modified conjugated diene-based polymer, and method for producing polymer composition The present invention relates to a method for producing a modified conjugated diene-based polymer, the method comprising a step of reacting a conjugated diene-based polymer with an organometallic compound, and a step of reacting the resulting product and an epoxy compound.
US08835563B2	Block copolymers from silylated vinyl terminated macromers This invention relates to a process to functionalize polyolefins comprising contacting a metallocene catalyst with a difunctional diblock hydrosilane, and one or more vinyl terminated polyolefins. This invention further relates to the diblock hydrosilane-functionalized polyolefins produced thereby.
US08835558B2	Polylactic acid/polycarbonate resin composition and molded product made using the same Disclosed is a polylactic acid/polycarbonate resin composition including (A) a mixed resin including (a1) a polycarbonate resin and (a2) a polylactic acid resin, and (B) a modified acrylic-based resin, and a molded product made using the same.
US08835554B2	Composition for the production of breathable-waterproof elastic film Novel articles, in particular films, made from polymers, which are elastic, impermeable to water and permeable to water vapor. Said articles are made from a composition comprising a dispersion of an elastomer in an aqueous solvent, a hydrophilic compound and a cross-linking agent.
US08835551B2	Ultra low viscosity iodine containing amorphous fluoropolymers Iodine containing amorphous fluoropolymers having at least one fluoropolymer with a cure site, where the fluoropolymer has a Mooney viscosity of 2 or less (ML 1+10) at 100° C. according to ASTM D1646, and a peel strength to a roll mill of 10 dN/cm or less and methods for making such iodine containing amorphous fluoropolymers are described. Articles derived from the cured product of such iodine containing amorphous fluoropolymers are also described. Solutions, dispersions and coatings derived from such iodine containing amorphous fluoropolymers are also described.
US08835550B2	Chlorinated polyethylene composition, method of producing the same, and articles made therefrom The instant invention is a chlorinated polyethylene composition, method of producing the same, and articles made therefrom. The chlorinated polyethylene composition according to the present invention comprises: (a) a chlorinated polyethylene; (b) less than 10 phr by weight of one or more curing agents; (c) from 50 to 150 phr by weight of one or more fillers; (d) from 1 to 8 phr by weight of one or more processing oil; (e) from less than 10 phr by weight of one or more stabilizing agents comprising an acid scavenger; (f) from less than 2 phr by weight of one or more antioxidants; and (g) from 3 to less than 15 phr by weight of an additive polymer comprising the reaction product of an olefin, an acrylate, and a maleic anhydride.
US08835549B2	Coating composition for engine parts and engine part comprising it An engine part coated with an engine-parts-coating composition comprising (i) at least one of a polyfluoroalkyl group and a polyfluoropolyether group, (ii) an organopolysiloxane group, and (iii) an alkoxysilyl group.
US08835542B2	Nucleating agent and thermoplastic compositions comprising the same A composition comprises a thermoplastic and a nucleating agent. The thermoplastic can be a polyolefin selected from the group consisting of polypropylene homopolymers, polypropylene copolymers, polyethylene, polyethylene copolymers, polybutylene, poly(4 methyl 1 pentene) and mixtures thereof. The nucleating agent can comprise a metal salt of a phenylphosphonic acid. The nucleating agent can comprise primary particles having a mean aspect ratio of about two or more. The composition can also comprise an acid scavenger, such as one or more metal salts of stearic acid. The composition can be used to produce thermoplastic articles using, for example, injection molding and thermoforming techniques.
US08835541B2	Phosphorus compounds, use thereof and flame retarding polyester fibers A phosphorus compound represented by the formula (I): wherein R1 and R2 are, the same or different, a hydrogen atom, a straight or branched-chain alkyl group having 1 to 6 carbon atoms or an aryl group having 6 to 12 carbon atoms which may be optionally substituted for an alkyl group having 1 to 4 carbon atoms, R3, R4, R5, R6 and R7 are, the same or different, a hydrogen atom or an aryl group having 6 to 12 carbon atoms which may be optionally substituted for an alkyl group having 1 to 4 carbon atoms, or R3 and R4, R4 and R5, R5 and R6 or R6 and R7 may form a 6 membered ring with carbon atoms wherein these groups bond a benzene ring provided that R3, R4, R5, R6 and R7 are not hydrogen atoms at the same time.
US08835533B2	Thermally resistant anaerobically curable compositions The present invention relates to anaerobically curable compositions demonstrating resistance to elevated temperature conditions.
US08835529B2	Denture adhesive compositions A denture adhesive composition having a denture adhesive component and a cohesion builder component. The cohesion builder component may be of salts of mono-phosphates, salts of di-phosphates, or salts of tri-phosphates.
US08835527B2	Dental composition comprising a calcium source The present invention relates to cements useful in dental applications, and more particularly to dental compositions which may release calcium ions, which may comprise at least one of salicylic acid ester derivative and a calcium source. The present invention further relates to the use of at least one of salicylic acid ester derivative and a calcium source for producing a dental composition, having biological properties and which may release calcium ions for use in dental procedures of intermediate restorations and channel filling.
US08835523B2	Silicone rubber composition curable by radial ray There is disclosed a silicone rubber composition curable by a radial ray comprising, at least, (A) an organopolysiloxane shown by the following general formula (1), (B) a phenyl ester derivative having an acryl group, (C) a sensitizer sensitized by a radial ray, and (D) a photosensitive dye, wherein each R1, R2, and R3 independently represents a monovalent hydrocarbon group having 1 to 10 carbon atoms; X represents the same or different monovalent organic group having an acryl group or a methacryl group. As a result, there is provided a silicone rubber composition capable of being cured by irradiation of a radial ray whereby showing excellent adhesion with various substrates, capable of forming a cured film, and capable of easily distinguishing whether it is cured or not by observing appearance when not irradiated with a radial ray.
US08835522B2	Polyurethane polymer having bisphenol group and photoimageable composition containing the same The present invention provides a polymer having the structure of formula (I) wherein n, R1, R2, R3, R4, R5, R6, a, b and c are as defined in the specification. The present invention also provides a negative-acting photoimageable composition comprising the above-mentioned polymer of formula (I), which is suitable for the fabrication of printed circuit boards.
US08835516B2	Fischer Tropsch process using improved extrudates A process for performing a Fischer Tropsch reaction comprising (a) providing syngas to a reactor, said reactor comprising catalyst particles that have been produced by extruding a paste using a die comprising a plurality of channels extending from an inlet to an outlet, wherein from the inlet to the outlet each channel comprises a first section with a helical bore with a non-circular cross-section, and a second section with a cylindrical bore which has a diameter equal or greater than that of the first section, wherein the second section is at least twice as long as a diameter of the first section; (b) providing the following process conditions in the reactor: a temperature from 125 to 350° C., and a pressure from 5 to 150 bar absolute, and a gaseous hourly space velocity from 500 to 10000 Nl/l/h; and (c) removing Fischer Tropsch product from the reactor.
US08835514B2	Pseudo-thermosetting neutralized chitosan composition forming a hydrogel and a process for producing the same The composition disclosed is a pseudo-thermosetting neutralized chitosan composition, neutralized with an hydroxylated base, forming a phosphate-free transparent hydrogel at a temperature higher than 5° C. Said composition contains a homogeneously reacetylated chitosan derived from a chitosan having a deacetylation degree of 80-90%, having a molecular weight of not smaller than 200 kDa and a deacetylation degree of 30-60%, and may further contain a diol. Said composition may be used as a drug delivery system.
US08835513B2	Drug delivery devices Compositions provided by contacting a biotin-containing component and an avidin-containing component are useful as drug delivery devices. Bioactive agents may be covalently bound to the biotin-containing component, the avidin-containing component, or both, mixed therewith, or combinations of the foregoing.
US08835512B2	Therapeutic application of cembranoids against HIV virus replication, HIV-associated neurocognitive disorders and HIV virus-induced inflammation A method and composition for suppressing replication of the HIV-1 virus strains, modulating the production and liberation of inflammatory mediators; and the prevention and treatment of neurocognitive disorders. The method comprises administering to a subject an effective amount of an a macrocyclic diterpenoid, such as 4R cembranoid.
US08835511B2	Absorbent articles including an odor control system Absorbent articles provided with an odor control system. The odor control system includes at least two classes of odor control materials, wherein one class acts on malodors or a malodorous substance in the absorbent article and a second class acts on nose receptors. The classes of odor control materials may be selected to provide a synergistic effect in terms of malodor reduction.
US08835506B2	Methods and related compositions for the treatment of cancer A method of treatment and/or prevention of cancer comprises administering agents which cause increased intracellular granularity in cancer cells, at least in an amount sufficient to inhibit proliferation of such cells and preferably in an amount sufficient to lead to cancer cell death. The method is particularly directed to refractory cancer, particularly hormone refractory prostate cancer. The agents identified cause increased intracellular granularity in the cancer cells, and also convert adherent cancer cells to non-adherent cancer cells, leading to cancer cell death. Using the present invention, cancer cells undergo increased intracellular granularity at relatively low agent concentrations, while also inhibiting cell proliferation. Increased concentrations lead to conversion of adherent cancer cells to non-adherent cancer cells, then to cell death. While the exact mechanism of cancer cell degradation and death is not completely understood, the treated cancer cells, including refractory prostate cancer cells, give indications of cell death through an autophagic mechanism. Pharmaceutical compositions related to the presently disclosed methods are also disclosed.
US08835505B1	Ready-to-use co-solvents pharmaceutical composition in modified flexible plastic container A ready-to-use injectable, co-solvents (ternary mixture) pharmaceutical composition for the treatment of cardiac conditions and diagnosis applications, comprising methyl-3-[4-(2-hydroxy-3-isopropylamino)propoxy]phenylpropionate hydrochloride (Esmolol hydrochloride), a buffering agent, ethanol and propylene glycol. The ready-to-use injectable, co-solvents (ternary mixture) pharmaceutical composition is capable of being stored in a modified flexible plastic container that may be heat-sterilized without deformation and/or without having the integrity of the closure system being compromised. A method for the manufacture of the ready-to-use injectable, co-solvents (ternary mixture) pharmaceutical composition is also disclosed.
US08835503B2	Pharmaceutical composition containing GLUR2-lacking AMPAR antagonist for preventing or treating psychiatric illnesses A pharmaceutical composition, comprising a GluR2-lacking AMPAR antagonist as an active ingredient, is effective for preventing or treating mental diseases selected from the group consisting of posttraumatic stress disorder (PTSD), drug addiction, and phobia.
US08835502B2	Treatment of friedreich's ataxia using histone deacetylase inhibitors The invention provides methods of treating Friedreich's ataxia using histone deacetylase inhibitors.
US08835496B2	Dermatological compositions comprising a fat or oil of an essential fatty acid triglyceride for treating of skin, mucosa, hair, nails, or scalp The present invention relates to a human beta-defensin inducing agent that comprises at least one fat or oil of an essential fatty acid triglyceride or a derivative thereof as the main active ingredient. It also relates to cosmetic, dermatological and pharmacological formulations comprising the at least one fat or oil.
US08835495B2	Pharmaceutical composition comprising cyclobenzaprine and aceclofenac in association The present invention relates to an association of active ingredients. More specifically: to an association of cyclobenzaprine and aceclofenac. Additionally, the present invention is also related to the use of aceclofenac and cyclobenzaprine, in association for the preparation of a medicine useful in the treatment of painful muscular diseases, as well as to a method of treatment of painful muscular diseases using an association of aceclofenac and cyclobenzaprine.
US08835494B2	Derivatives of 1-(2-halo-biphenyl-4-yl)-Alkanecarboxylic for the treatment of neurodegenerative diseases Pro-drugs of 1-(2-halo-biphenyl-4-yl)alkanecarboxylic acids are useful for preventing and/or treating neurodegenerative diseases, improving cognitive function and treating cognitive impairment.
US08835493B2	Oligo-benzamide compounds for use in treating cancers The present invention provides bis- and tris-benzamide compounds in the treatment of breast, brain and ovarian cancers.
US08835491B2	Aquaporin modulators and methods of using them for the treatment of edema and fluid imbalance Compounds, including 3-carboxy aryl sulfonamide compounds, which agonize or antagonize aquaporin channels and methods of using them to treat disorders or diseases mediated by aquaporins.
US08835484B2	Naphthocyanines for use as contrast agents Cyanine dyes having optional sulfonic acid substituents on the aromatic nucleus have been developed for use as contrast agents for assisting in surgery and diagnosis, especially for simplifying the surgical removal of basal membranes of the eye, such as the internal limiting membrane (ILM), and for dyeing the lens capsule.
US08835483B2	Plant disease control composition and its use A composition comprising a carboxamide compound represented by following formula (I), wherein R1 represents a hydrogen atom or a methyl group, and R2 represents a methyl group, a difluoromethyl group or a trifluoromethyl group, and one or more acylalanine compounds selected from group (A) consisting of methyl N-(methoxyacetyl)-N-(2,6-xylyl)alaninate and methyl N-(phenylacetyl)-N-(2,6-xylyl)alaninate is provided by this invention, and this composition has an excellent effect for controlling plant disease.
US08835478B2	Treatment for cancer The present invention provides methods for the treatment of tumors, comprising administration of an effective amount of at least one taxoid and an effective amount of at least one benzimidazol carbamate compound of formula (I). The invention also provides a method for the treatment of tumors insensitive to one or more anti-mitotic drugs, the method comprising administering a effective amount of at least one benzimidazole carbamate compound of formula (I). Also provide are compositions for carrying out methods of the invention.
US08835477B2	Method for the synthesis of 2-thiohistidine and the like Methods for the synthesis of 2-thiohistidine or a derivative thereof of the formula (I), or of a physiologically acceptable salt, a tautomer, a stereoisomer or a mixture of stereoisomers in any proportions thereof, from a compound of the formula (II) or a physiologically acceptable salt, a tautomer, a stereoisomer or a mixture of stereoisomers in any proportions thereof, by cleavage reaction in the presence of a thiol at a temperature higher than or equal to 60° C. The invention also relates to compounds of the formula (II) and a method for the synthesis thereof.
US08835475B2	Compounds as cannabinoid receptor ligands The present application relates to isothiazolylidene containing compounds of Formula (I) wherein R1, R2, R3, R4, and L are as defined in the specification, compositions comprising such compounds, and methods of treating conditions and disorders using such compounds and compositions.
US08835472B2	Compounds, pharmaceutical compositions and uses thereof The invention relates to new compounds of the formula I to their use as medicaments, to methods for their therapeutic use and to pharmaceutical compositions containing them.
US08835470B2	Mandelamide heterocyclic compounds Disclosed are compounds of Formula (I) or stereoisomers, salts, or prodrugs thereof, wherein: Q is, or R1 is phenyl substituted with zero to 3 substituents; and R1, R2, R3, R4, R5, and G are defined herein. Also disclosed are methods of using such compounds as selective agonists for G protein-coupled receptor S1P1, and pharmaceutical compositions comprising such compounds. These compounds are useful in treating, preventing, or slowing the progression of diseases or disorders in a variety of therapeutic areas, such as autoimmune diseases and vascular disease.
US08835469B2	Substituted benzamide derivatives as glucokinase (GK) activators The present invention relates to substituted benzamide derivatives of the Formula I and their pharmaceutically acceptable salts, pharmaceutically acceptable solvates, enantiomers, diastereomers, prodrugs, metabolites, and polymorphs and can be useful for treating disease states mediated by glucokinase. Compounds disclosed herein can be used for reducing blood glucose levels and for increasing insulin secretion for treating type II diabetes. The invention also relates to processes for the preparation of the compounds of invention, pharmaceutical compositions containing the compounds, and their use.
US08835466B2	Synthesis and uses of pyroglutamic acid derivatives Novel pyroglutamic acid derivatives (I), wherein R1 is —OH, —ORa, wherein Ra is alkyl, cycloalkyl, alkenyl, cycloalkenyl, aryl, aralkyl or heterocyclyl; R2, R3 and R4 are independently H, a nitrogen protecting group which hydrolyzes under acidic conditions or phtalamide; X is a pharmaceutically acceptable anion; and Y is a N-containing group; either in the form of their isolated optically active stereoisomers or in the form of mixtures thereof, are useful compounds for enhancing an immuneresponse in a subject and/or for treating tumors, bacterial, fungal or viral infections, or autoimmune diseases.
US08835464B2	Triazole compounds that modulate HSP90 activity The present invention relates to substituted triazole compounds and compositions comprising substituted triazole compounds. The invention further relates to methods of inhibiting the activity of Hsp90 in a subject in need thereof and methods for preventing or treating hyperproliferative disorders, such as cancer, in a subject in need thereof comprising administering to the subject a substituted triazole compound of the invention, or a composition comprising such a compound.
US08835460B2	Sublingual fentanyl spray and methods of treating pain The present invention is directed to sublingual formulations containing fentanyl, a pharmaceutically acceptable salt thereof, or derivative thereof, suitable for administration to a patient, and methods for treatment with the formulations.
US08835459B2	Sublingual fentanyl spray The present invention is directed to sublingual formulations containing fentanyl, a pharmaceutically acceptable sale thereof, or derivative thereof, suitable for administration to a patient, and methods for treatment with the formulations.
US08835456B1	NS5A inhibitors useful for treating HCV The invention provides compounds of Formula I and the pharmaceutically salts thereof. These compounds may be generally described as bridged-bicyclo indole-containing compounds. The variables shown in Formula I are defined herein. Certain compounds of Formula I are useful as antiviral agents. Compounds as disclosed herein are potent and/or selective inhibitors of viral replication, particularly Hepatitis C virus replication. The invention also provides pharmaceutical compositions containing one or more compounds of Formula I and at least one pharmaceutically acceptable carrier. Such pharmaceutical compositions may contain a compound of Formula I as the only active agent or may contain a combination of a compound of Formula I and one or more other pharmaceutically active agents. The invention also provides methods for treating viral infections, including Hepatitis C infections, in patients.
US08835454B2	Fused bicyclic diamine derivatives as HIV attachment inhibitors Compounds of Formula I, including pharmaceutically acceptable salts thereof: wherein A is selected from the group of: are useful as HIV attachment inhibitors.
US08835451B2	Compounds The present invention provides organic compounds of the following structure; A-L1-B-C-D-L2-E that are useful for treating or preventing conditions or disorders associated with DGAT1 activity in animals, particularly humans.
US08835450B2	Combination of inhibitor of B-Raf and an inhibitor of Akt in the treatment of cancer The present invention relates to a method of treating cancer in a human and to pharmaceutical combinations useful in such treatment. In particular, the method relates to a cancer treatment method that includes administering N-{3-[5-(2-Amino-4-pyrimidinyl)-2-(1,1-dimethylethyl)-1,3-thiazol-4-yl]-2-fluorophenyl}-2,6-difluorobenzenesulfonamide or a pharmaceutically acceptable salt thereof, and N-{(1S)-2-amino-1-[(3,4-difluorophenyl)methyl]ethyl}-5-chloro-4-(4-chloro-1-methyl-1H-pyrazol-5-yl)-2-furancarboxamide, or a pharmaceutically acceptable salt thereof, to a human in need thereof.
US08835448B2	Methods and formulations for modulating lyn kinase activity and treating related disorders The present invention relates to compounds and pharmaceutically acceptable salts thereof and formulations comprising the compounds or a pharmaceutically acceptable salts thereof that are useful in modulating lyn kinase activity. In particular, the compounds or a pharmaceutically acceptable salts thereof are useful for treating or preventing a disease or disorder including cardiovascular disease, dyslipidemia, dyslipoproteinemia, a disorder of glucose metabolism, metabolic syndrome (i.e., Syndrome X), a peroxisome proliferator activated receptor-associated disorder, septicemia, a thrombotic disorder, type II diabetes, obesity, pancreatitis, hypertension, renal disease, inflammation, or impotence.
US08835444B2	Cyclohexyl amide derivatives as CRF receptor antagonists There are described cyclohexyl amide derivatives useful as corticotropin releasing factor (CRF) receptor antagonists Formula (I).
US08835439B2	Pharmaceutical composition containing (2R)-methyl-1-3-[2-(3-pyridinyloxy)ethoxy]-2-pyrazinylpiperazine L-malate for treatment of serotonin-related diseases The present invention relates to a process for the preparation of compounds which are therapeutically active in the central nervous system.In one aspect, the invention relates to a process for the preparation of compounds of the general formula (I): wherein HA is a pharmaceutically acceptable acid and R1-R4 are each independently selected from the group consisting of hydrogen, halogen, C1-C6-alkyl, C1-C6-alkoxy, and di-C1-C6-alkylamino-C2-C6-alkoxy. The invention also relates to the use of said compound to manufacture a medicament for the treatment of a serotonin-related disorder.
US08835437B2	Piperidine/piperazine derivatives The invention further relates to a DGAT inhibitor of formula (I), including any stereochemically isomeric form thereof, wherein A represents CH or N; the dotted line represents an optional bond in case A represents a carbon atom; X represents —NRx—C(═O)—; —Z—C(═O)—; —Z—NRx—C(═O)—; —S(═O)p—; C(═S)—; —NRx—C(═S)—; —Z—C(═S)—; —Z—NRx—C(═S)—; —O—C(═O)—; —C(═O)—C(═O)—; R1 represents a 5-membered monocyclic heterocycle containing at least 2 heteroatoms; a 6-membered aromatic monocyclic heterocycle; or a 5-membered heterocycle containing at least 2 heteroatoms fused with phenyl, cyclohexyl or a 5-or 6-membered heterocycle; wherein each of said heterocycles may optionally be substituted; R2 represents R3; R3 represents C3-6cycloalkyl, phenyl, naphtalenyl, 2,3-dihydro-1,4-benzodioxinyl, 1,3-benzodioxlyl, 2,3-dihydrobenzofuranyl or a 6-membered aromatic heterocycle containing 1 or 2 N atoms, wherein said C3-6cycloalkyl, phenyl, naphtalenyl, 2,3-dihydro-1,4-benzo-dioxinyl, 1,3-benzodioxolyl, 2,3-dihydrobenzofuranyl or 6-membered aromatic heterocycle may optionally be substituted; a N-oxide thereof, a pharmaceutically acceptable salt thereof or a solvate thereof. The invention further relates to methods for preparing such compounds, pharmaceutical compositions comprising said compounds as well as the use as a medicine of said compounds.
US08835436B2	Arylpiperazine-containing imidazole 4-carboxamide derivatives and pharmaceutical composition comprising same A novel arylpiperazine-containing imidazole 4-carboxamide derivative or a pharmaceutically acceptable salt thereof, and a pharmaceutical composition comprising the same as an active ingredient for preventing or treating a depressive disorder are provided.
US08835435B2	2-(3-aminoaryl) amino-4-aryl-thiazoles and their use as c-kit inhibitors Novel compounds selected from 2-(3-aminoaryl)amino-4-aryl-thiazoles of formula (I) that selectively modulate, regulate, and/or inhibit signal transductions mediated by certain native and/or mutant tyrosine kinases implicated in a variety of human and animal diseases such as cell proliferative metabolic, allergic and degenerative disorders. More particularly, these compounds are potent and selective c-kit inhibitors.
US08835432B2	Heterocyclic compounds and their uses Substituted bicyclic heteroaryls and compositions containing them, for the treatment of general inflammation, arthritis, rheumatic diseases, osteoarthritis, inflammatory bowel disorders, inflammatory eye disorders, inflammatory or unstable bladder disorders, psoriasis, skin complaints with inflammatory components, chronic inflammatory conditions, including but not restricted to autoimmune diseases such as systemic lupus erythematosis (SLE), myestenia gravis, rheumatoid arthritis, acute disseminated encephalomyelitis, idiopathic thrombocytopenic purpura, multiples sclerosis, Sjoegren's syndrome and autoimmune hemolytic anemia, allergic conditions including all forms of hypersensitivity, The present invention also enables methods for treating cancers that are mediated, dependent on or associated with p110δ activity, including but not restricted to leukemias, such as Acute Myeloid leukaemia (AML) Myelo-dysplastic syndrome (MDS) myelo-proliferative diseases (MPD) Chronic Myeloid Leukemia (CML) T-cell Acute Lymphoblastic leukaemia (T-ALL) B-cell Acute Lymphoblastic leukaemia (B-ALL) Non Hodgkins Lymphoma (NHL) B-cell lymphoma and solid tumors, such as breast cancer.
US08835423B2	Azepine inhibitors of janus kinases The present invention provides compounds that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases.
US08835417B2	Crystalline hydrochloride salt of (1-(4-fluorophenyl)-1H-indol-5-yl)-(3-(4-(thiazole-2-carbonyl)piperazin-1-yl)azetidin-1-yl)methanone The present invention relates to a crystalline hydrochloride salt of (1-(4-fluorophenyl)-1H-indol-5-yl)(3-(4-(thiazole-2-carbonyl)piperazin-1-yl)azetidin-1-yl)methanone, methods of making said salt, pharmaceutical compositions containing said salt, and the use of said salt in the treatment of pain and diseases that cause such pain, and metabolic disorders such as, obesity, hyperphagia, and diabetes.
US08835415B2	Standardized composition, method of manufacture and use in the resolution of RNA virus infection The present disclosure is in relation to antiviral preparations obtained from plant sources namely Cinnamon, Litchi and Arachis. It provides a composition and a process to prepare the composition comprising pentameric procyanidin flavonoid, trimers and tetramers. The composition improves immunity response and found to be useful in treatment and management of HIV infection and AIDS and for the prevention, treatment and management of Influenza virus and infection.
US08835413B2	Sex steroid precursors alone or in combination with a selective estrogen receptor modulator and/or with estrogens and/or a type 5 cGMP phosphodiesterase inhibitor for the prevention and treatment of vaginal dryness and sexual dysfunction in postmenopausal women Novel methods for treating or reducing the likelihood of acquiring vaginal dysfunctions, more particularly vaginal dryness and dyspareunia, leading to sexual dysfunction and low sexual desire and performance , in susceptible warm-blooded animals including humans involving administration of a sex steroid precursor. Further administration of estrogen or selective estrogen receptor modulator, particularly those selected from the group consisting of Raloxifene, Arzoxifene, Tamoxifen, Droloxifene, Toremifene, Iodoxifene, GW 5638, TSE-424, ERA-923, and lasofoxifene, and more particularly compounds having the general structure: is specifically disclosed for the medical treatment and/or inhibition of development of some of these above-mentioned diseases. Pharmaceutical compositions for delivery of active ingredient(s) and kit(s) useful to the invention are also disclosed.
US08835409B2	3-alkenyl-6-halo-4-aminopicolinates and their use as herbicides 3-Alkenyl-6-halo-4-aminopicolinic acids and their derivatives are potent herbicides demonstrating a broad spectrum of weed control.
US08835407B2	Pharmaceutical compositions comprising prasugrel and cyclodextrin derivatives and methods of making and using the same The present invention is directed to pharmaceutical compositions comprising prasugrel and a cyclodextrin derivative, and methods of making and using the same.
US08835406B2	Treatment of reynaud's disease A method of treating a patient inflicted with Reynaud's Disease including the step of injecting into the back of the patient's hand an effective amount of a hyaluronic product, thereby creating a glove-like insulation to decrease the blood vessel vasospasm.
US08835404B2	Method for preparing polysaccharide of green tea and cosmetic composition for skin whitening, moisturization and anti-wrinkle effects comprising the polysaccharide Disclosed is a method for preparing polysaccharides of green tea, and more particularly to a method for preparing polysaccharides of green tea comprising the steps of: a) removing chlorophyll and a low molecular weight polyphenol from green tea powder using a solvent; b) hot-water extracting a water-soluble active ingredient from the green tea residue of step a); and c) separating the polysaccharides of green tea from the hot-water extract of step b) by ultrafiltration and ethanol precipitation. Also, the present invention relates to a cosmetic composition for skin whitening, moisturization and anti-wrinkle effects comprising the polysaccharides of green tea as an effective ingredient.
US08835402B2	Compound and method for treating myotonic dystrophy Provided are 9-base morpholino antisense compounds targeted to polyCUG repeats in the 3′UTR region of dystrophia myotonica protein kinase (DMPK) mRNA, and related methods for treating myotonic dystrophy DM1.
US08835398B2	Promoters exhibiting endothelial cell specificity and methods of using same for regulation of angiogenesis Isolated polynucleotide sequences exhibiting endothelial cell specific promoter activity, novel cis regulatory elements and methods of use thereof enabling treatment of diseases characterized by aberrant neovascularization or cell growth are disclosed.
US08835395B2	Protein peptide hydrogels The present invention broadly provides novel peptides that can be used to form hydrogels. The peptides are short (preferably 30 amino acid residues or less) and include hydrophilic and hydrophobic segments joined by a turning segment. The hydrogels are formed by altering the pH of a solution of these peptides to an acidic level, or by introducing a source of ions into a solution of these peptides. The resulting hydrogels are shear thinning gels that have high storage moduli and high rates of recovery after destruction. They find use in medical applications, including tissue engineering.
US08835392B2	Mimetic peptides and the use thereof in the form of 20S, 26S and immunoproteasome inhibitors The present invention relates to peptide-mimetic compounds, the synthesis and use thereof fort he inhibition of proteasomes and the induction of apoptosis in tumor cells. The present invention furthermore relates to pharmaceutical compositions comprising the compounds and the use of the compounds for a treatment of diseases, in particular cancer and neurodegenerative diseases.
US08835387B2	Histidyl-tRNA synthetases for treating autoimmune and inflammatory diseases The present invention relates generally to compositions and methods comprising histidyl-tRNA synthetase polypeptides or other specific blocking agents for the treatment autoimmune diseases and other inflammatory diseases, including those related to Jo-1 antibodies.
US08835383B2	Method for controlling the digestive coagulation of proteins This invention relates to the coagulation of protein containing nutritional compositions in the upper gastro-intestinal tract, more in particular in the stomach and provides a method for reducing suchcoagulation.
US08835380B2	Therapeutic conjugates The invention concerns a novel antimicrobial peptide (AMP) polymer conjugate comprising at least one AMP, typically colistin, and a dextrin polymer wherein said dextrin polymer has a molecular weight between 5,000-60,000 g/mol and is modified by the additions of pendant groups which increase the stability of the conjugate and so delays its degradation thereby slowing the rate at which the AMP is released.
US08835378B2	Multi-domain amphipathic helical peptides and methods of their use Disclosed herein are peptides or peptide analogs with multiple amphipathic α-helical domains that promote lipid efflux from cells via an ABCA1-dependent pathway. Also provided herein are methods of using multi-domain amphipathic α-helical peptides or peptide analogs to treat or inhibit dyslipidemic disorders. Methods for identifying non-cytotoxic peptides that promote ABCA1-dependent lipid efflux from cells are also disclosed herein.
US08835376B2	Process for making particles for delivery of drug nanoparticles A process for making particles for delivery of drug nanoparticles is disclosed herein. The process comprises the steps of (a) forming a suspension of drug nanoparticles by mixing a precipitant solution with an anti-solvent solution under micro-mixing environment, where the formed nanoparticles have a narrow particle size distribution; (b) providing an excipient to at least one of the precipitant solution, the anti-solvent solution and the suspension of drug nanoparticles, the excipient being selected to maintain said drug nanoparticles in a dispersed state when in liquid form; and (c) drying the suspension of drug nanoparticles containing the excipient therein to remove solvent therefrom, wherein removal of the solvent causes the excipient to solidify and thereby form micro-sized matrix particles, each micro-sized particle being comprised of drug nanoparticles dispersed in a solid matrix of the excipient.
US08835374B2	Process to prepare an external structuring system for liquid laundry detergent composition The present invention relates to a process to prepare external structuring system(s) (ESS) comprising crystallized triglycerides including crystallized hydrogenated castor oil (HCO) and packing parameter adjusting agent to provide higher structuring ability. The present invention also relates to laundry detergent compositions in liquid or gel form comprising ESS.
US08835365B2	Lubricating oil composition for rolling with round die Provided is a lubricating oil composition for round die rolling, which is obtained by blending a base oil with: (A) 0.5 to 40 mass % of a monoester having 13 to 48 carbon atoms (a-1) and/or 0.5 to 30 mass % of a fatty dicarboxylate having 13 to 34 carbon atoms (a-2); (B) 0.01 to 10 mass % of a thiadiazole compound; (C) 0.01 to 15 mass % of a thiophosphite; and (D) 0.01 to 5 mass % of a triazole compound. The lubricating oil composition for round die rolling shows excellent processing performance without using any chlorine-based compound, and is able to improve lubricity in a bearing to lengthen the life of the bearing.
US08835364B2	Compositions and method for breaking hydraulic fracturing fluids Breaking compositions are disclosed for controlled breaking of borate cross-linked fracturing fluids, and to method for making and using same, where the composition includes an oxidative component and an ester component.
US08835363B2	Drilling, drill-in and completion fluids containing nanoparticles for use in oil and gas field applications and methods related thereto Drilling, drill-in and completion fluids containing nanoparticles for use in hydrocarbon drilling and recovery processes and methods related thereto are provided. The fluids also include a dual acting shield agent that shields the nanoparticles and also acts as a viscosifier. The fluids can be used in various types of hydrocarbon drilling and recovery processes, such as drilling, drill in, completion, and the like.
US08835360B1	Combinatorial therapy for protein signaling diseases A method for selecting combinations of drugs for treatment of diseases that arise from deranged signaling pathways is disclosed. The method involves measuring the activity states for signaling proteins in a diseased cell and determining whether the activity states are different from the activity states observed for a reference cell such as a normal cell. Based on the observed differences, combinations of two or more drugs are selected to reduce these differences. Treatment of a subject with the combinations restores the activity states of the signaling proteins of the deranged disease-associated signaling pathways toward the activity states observed in the reference cell. Since the diseased cell and the reference cell can both be obtained from the same subject, combinations of drugs that specifically target patient-specific signaling derangements is possible.
US08835357B2	Agricultural compositions comprising oil-in-water emulsions The present invention relates to an oil-in-water emulsion, comprising oily globules that include at least one agriculturally active ingredient, in which the oily globules of the emulsion and are coated with a polymeric adsorption layer. The polymeric adsorption layer coating the oily globules includes (1) at least one polymeric surface-active agent having an HLB values in the range of about 16 to about 18, and (2) at least one ionic surface-active agent. The oily globules of the emulsion have mean particle diameter of less than about 800 nanometers, are resistant to Ostwald ripening and are well suited for the treatment of plants. Agriculturally active ingredients that can be used with the emulsion include, pesticides, herbicides, fungicides, mitocides, bactericides and the like. The invention further includes methods of using the inventive oil-in-water emulsions to treat plants and on surfaces adjacent to plants, plant pests or other pests.
US08835355B2	Low-concentration phytotoxic micronutrient compounds for selective control of invasive plant species This invention provides low-dose, low-concentration formulations of phytotoxic trace inorganic compounds for use in methods and systems for selectively and effectively controlling invasive plants.
US08835351B2	Additive for hydroconversion process and method for making and using same An additive for hydroconversion processes includes a solid organic material having a particle size of between about 0.1 and about 2,000 μm, a bulk density of between about 500 and about 2,000 kg/m3, a skeletal density of between about 1,000 and about 2,000 kg/m3 and a humidity of between 0 and about 5 wt %. Methods for preparation and use of the additive are also provided. By the use of the additive of the present invention, the hydroconversion process can be performed at high conversion level.
US08835348B2	Alkoxylation processes and catalysts therefor A process of contacting an alkylene oxide with 2-methoxy-1-propanol (PM1) in the presence of an oligomeric Schiff base metal complex catalyst is disclosed. Further, a process involving contacting an alkylene oxide with an alkyl alcohol using an oligomeric Schiff base metal complex as a catalyst is also disclosed. Additionally, novel compositions which can be used as catalysts in processes involving the contacting of an alkyl alcohol with an alkylene oxide are also disclosed.
US08835345B2	Hybrid catalysts There is provided a catalyst comprising metal nanoparticles supported on nanocrystalline cellulose and a homogeneous catalyst system comprising this catalyst colloidally suspended in a fluid. There is also provided a method of producing this catalyst and various uses thereof.
US08835340B2	Method for regeneration of exhaust gas treatment catalyst, and exhaust gas treatment cataylst produced using the method A regenerated exhaust gas treatment catalyst (17) can be produced by coarsely grinding a used exhaust gas treatment catalyst (11); separating a coarsely ground material into coarse pieces (12) and a fine powder (13); finely grinding the coarse pieces (12); kneading the fine powder together with other raw materials, molding a kneaded material, and drying and burning a molded material to produce a base material (14); grinding a fresh exhaust gas treatment catalyst (15); forming a slurry solution of the ground product of the fresh exhaust gas treatment catalyst (15); coating the surface of the base material (14) with the slurry solution (16); and drying the base material (14) that has been coated with the slurry solution (16) and burning the base material (14) at a temperature higher than the burning temperature employed in the production of the exhaust gas treatment catalyst (15).
US08835337B2	Optical glass, press-molding glass material, and optical element and method of manufacturing the same An optical glass, comprising, denoted as cation percentages: a content of Si4+ and B3+ (35 to 55); a combined content of La3+, Gd3+, and Y3+ (30 to 55), wherein Gd3+ is 5 to 20%; a content of Ti4+, Nb5+, Ta5+ and W6+ (7 to 20); Zr4+ (2 to 8); and Zn2+ (0 to 10); wherein a cation ratio of Zn2+ to Gd3+ is 0 to 0.80; a cation ratio of Gd3+ to Ti4+, Nb5+, Ta5+, and W6+ combined is 0.65 to 2.00; a cation ratio of Ta5+ to Ti4+, Nb5+, Ta5+, and W6+ combined is 0 to 0.30; a cation ratio of Ti4+ to Ti4+, Nb5+, Ta5+, and W6+ combined is 0.30 to 0.90; and a refractive index nd is 1.890 to 1.950, and an Abbé number νd of equal to or lower than 39.0, the Abbé number νd satisfying a relation of νd≧(2.334−nd)/0.012 relative to nd.
US08835320B2	Etching method and device An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first etching step for exposing the insulating film to processing gas that has been turned into a plasma to etch the insulating film to a portion in the thickness direction; a deposition material removing step for exposing the insulating film remaining after completion of the first etching to oxygen plasma to remove deposition material deposited on the surface of the remaining insulating film; and a second etching of exposing the remaining insulating film to processing gas that has been turned into a plasma to etch the remaining insulating film.
US08835316B2	Transistor with primary and semiconductor spacer, method for manufacturing transistor, and semiconductor chip comprising the transistor The disclosure provides a transistor, a method for manufacturing the transistor, and a semiconductor chip comprising the transistor. The transistor comprises: an active area, a gate stack, a primary spacer, and source/drain regions, wherein the active area is on a semiconductor substrate; the gate stack, the primary spacer, and the source/drain regions are on the active area; the primary spacer surrounds the gate stack; the source/drain regions are embedded in the active area and self-aligned with opposite sides of the primary spacer. Wherein the transistor further comprises: a silicide spacer, wherein the silicide spacer is located at opposite sides of the primary spacer, and a dielectric material is filled between the two ends of the silicide spacer in the width direction of the gate stack, so as to isolate the source/drain regions from each other.
US08835314B2	Method for fabricating semiconductor memory device A method for fabricating a semiconductor device includes forming an etch-target layer over a substrate having a first region and a second region, stacking first and second hard mask layers over the etch-target layer, forming spacer patterns over the second hard mask layer of the first area, etching the second hard mask layer using the spacer patterns as an etch barrier, forming a hard mask pattern over the first hard mask layer of the second region, etching the first hard mask layer using the second hard mask layer of the first region and the hard mask pattern of the second region as etch barriers, removing the hard mask pattern of the second region, and etching the etch-target layer using the first and second hard mask layers of the first region and the first hard mask layer of the second region as etch barriers.
US08835304B2	Method of semiconductor integrated circuit fabrication A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate. A sacrifice layer (SL) is formed and patterned on the substrate. The patterned SL has a plurality of openings. The method also includes forming a metal layer in the openings and then removing the patterned SL to laterally expose at least a portion of the metal layer to form a metal feature, which has a substantial same profile as the opening. A dielectric layer is deposited on sides of the metal feature.
US08835302B2	Method of fabricating a package substrate A method of fabricating a package substrate including preparing a substrate having at least one conductive pad, forming an insulating layer having an opening to expose the conductive pad on the substrate, forming a separation barrier layer on the conductive pad inside the opening to be higher than the upper surface of the insulating layer along the side walls thereof, forming a post terminal on the separation barrier layer, and forming a solder bump on the post terminal.
US08835296B2	Electronic component manufacturing method including step of embedding metal film The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.
US08835294B2	Method for improving thermal stability of metal gate The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure on the substrate, the gate structure including a dummy gate, removing the dummy gate from the gate structure thereby forming a trench, forming a work function metal layer partially filling the trench, forming a fill metal layer filling a remainder of the trench, performing a chemical mechanical polishing (CMP) to remove portions of the metal layers outside the trench, and implanting Si, C, or Ge into a remaining portion of the fill metal layer.
US08835292B2	Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layer A method of manufacturing a semiconductor device including a replacement metal gate process incorporating a conductive dummy gate layer (e.g., silicon germanium (SiGe), titanium nitride, etc.) and a related are disclosed. The method includes forming an oxide layer on a substrate; removing a gate portion of the oxide layer from the substrate in a first region of the semiconductor device; forming a conductive dummy gate layer on the semiconductor device in the first region; and forming a gate on the semiconductor device, the gate including a gate conductor disposed in the first region and directly connected to the substrate.
US08835290B2	Methods and compositions for doping silicon substrates with molecular monolayers Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.
US08835288B2	Method of manufacturing silicon carbide semiconductor device A method of manufacturing a silicon carbide semiconductor device of an embodiment includes: implanting ions in a silicon carbide substrate; performing first heating processing of the silicon carbide substrate in which the ions are implanted; and performing second heating processing of the silicon carbide substrate for which the first heating processing is performed, at a temperature lower than the first heating processing.
US08835281B2	Methods for the formation of a trap rich layer An integrated circuit chip is formed with an active layer and a trap rich layer. The active layer is formed with an active device layer and a metal interconnect layer. The trap rich layer is formed above the active layer. In some embodiments, the active layer is included in a semiconductor wafer, and the trap rich layer is included in a handle wafer.
US08835278B2	Method for forming a buried dielectric layer underneath a semiconductor fin Disclosed are methods for forming a localized buried dielectric layer under a fin for use in a semiconductor device. In some embodiments, the method may include providing a substrate comprising a bulk semiconductor material and forming at least two trenches in the substrate, thereby forming at least one fin. The method further includes filling the trenches with an insulating material and partially removing the insulating material to form an insulating region at the bottom of each of the trenches. The method further includes depositing a liner at least on the sidewalls of the trenches, removing a layer from a top of each of the insulating regions to thereby form a window opening at the bottom region of the fin, and transforming the bulk semiconductor material of the bottom region of the fin via the window opening, thereby forming a localized buried dielectric layer in the bottom region of the fin.
US08835277B2	Method to improve charge trap flash memory core cell performance and reliability A semiconductor processing method to provide a high quality bottom oxide layer and top oxide layer in a charged-trapping NAND and NOR flash memory. Both the bottom oxide layer and the top oxide layer of NAND and NOR flash memory determines array device performance and reliability. The method describes overcomes the corner thinning issue and the poor top oxide quality that results from the traditional oxidation approach of using pre-deposited silicon-rich nitride.
US08835275B2	Semiconductor devices having nitrided gate insulating layer and methods of fabricating the same Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches.
US08835271B2	Semiconductor display device It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
US08835269B2	Method of manufacturing solid-state image sensor A method of manufacturing a solid-state image sensor having photoelectric conversion elements and one or more MOS transistors are formed on a semiconductor substrate is provided. The method includes forming a resist pattern having an opening and a shielding portion over the substrate; and implanting ions in the substrate through the opening. When the substrate is viewed from a direction, an isolation region that is positioned between accumulation regions adjacent to one another is exposed in the opening, and when viewed from a different direction, a channel region of the MOS transistors is exposed in the opening, and the isolation region is shielded by the shielding portion. Ions irradiated in the direction are implanted in the isolation region, and ions irradiated in the different direction are implanted in the channel region.
US08835261B2	Field effect transistor structure and method of forming same The disclosure relates generally to a metal-oxide-semiconductor field effect transistor (MOSFET) structures and methods of forming the same. The MOSFET structure includes at least one semiconductor body on a substrate; a dielectric cap on a top surface of the at least one semiconductor body, wherein a width of the at least one semiconductor body is less than a width of the dielectric cap; a gate dielectric layer conformally coating the at least one semiconductor body; and at least one electrically conductive gate on the gate dielectric layer.
US08835257B2	Method of fabricating semiconductor device including a recessed channel A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.
US08835251B2	Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process A semiconductor device includes a transistor, a capacitor and a resistor wherein the capacitor includes a doped polysilicon layer to function as a bottom conductive layer with a salicide block (SAB) layer as a dielectric layer covered by a Ti/TiN layer as a top conductive layer thus constituting a single polysilicon layer metal-insulator-polysilicon (MIP) structure. While the high sheet rho resistor is also formed on the same single polysilicon layer with differential doping of the polysilicon layer.
US08835246B2	Integrated circuits with resistors and methods of forming the same A method of forming an integrated circuit includes forming at least one transistor over a substrate. The at least one transistor includes a first gate dielectric structure disposed over a substrate. A work-function metallic layer is disposed over the first gate dielectric structure. A conductive layer is disposed over the work-function metallic layer. A source/drain (S/D) region is disposed adjacent to each sidewall of the first gate dielectric structure. At least one resistor structure is formed over the substrate. The at least one resistor structure includes a first doped semiconductor layer disposed over the substrate. The at least one resistor structure does not include any work-function metallic layer between the first doped semiconductor layer and the substrate.
US08835242B2	Semiconductor structure and method An embodiment is a semiconductor structure. The semiconductor structure comprises at least two gate structures on a substrate. The gate structures define a recess between the gate structures, and the recess is defined by a depth in a vertical direction. The depth is from a top surface of at least one of the gate structures to below a top surface of the substrate, and the depth extends in an isolation region in the substrate. The semiconductor structure further comprises a filler material in the recess. The filler material has a first thickness in the vertical direction. The semiconductor structure also comprises an inter-layer dielectric layer in the recess and over the filler material. The inter-layer dielectric layer has a second thickness in the vertical direction below the top surface of the at least one of the gate structures. The first thickness is greater than the second thickness.
US08835235B2	Thin-film semiconductor device and method for fabricating thin-film semiconductor device A method for fabricating a thin-film semiconductor device according to the present disclosure includes: preparing a glass substrate; forming, above the glass substrate, an undercoat layer including a nitride film; forming a barrier layer above the undercoat layer; forming a molybdenum metal layer above the barrier layer; forming a gate electrode from the molybdenum metal layer; forming a gate insulating film above the gate electrode; forming a non-crystalline silicon layer as a non-crystalline semiconductor layer above the gate insulating film; forming a polycrystalline semiconductor layer including a polysilicon layer by annealing the non-crystalline silicon layer using a continuous-wave (CW) laser, the non-crystalline silicon layer being crystallized by the annealing; and forming a source electrode and a drain electrode above the polysilicon layer. Part of the barrier layer changes into a layer including oxygen atoms as a major component by the annealing when forming the polysilicon layer.
US08835234B2	MOS having a sic/sige alloy stack A delta doping of silicon by carbon is provided on silicon surfaces by depositing a silicon carbon alloy layer on silicon surfaces, which can be horizontal surfaces of a bulk silicon substrate, horizontal surfaces of a top silicon layer of a semiconductor-on-insulator substrate, or vertical surfaces of silicon fins. A p-type field effect transistor (PFET) region and an n-type field effect transistor (NFET) region can be differentiated by selectively depositing a silicon germanium alloy layer in the PFET region, and not in the NFET region. The silicon germanium alloy layer in the PFET region can overlie or underlie a silicon carbon alloy layer. A common material stack can be employed for gate dielectrics and gate electrodes for a PFET and an NFET. Each channel of the PFET and the NFET includes a silicon carbon alloy layer, and is differentiated by the presence or absence of a silicon germanium layer.
US08835228B2	Substrate-less stackable package with wire-bond interconnect A method for making a microelectronic unit includes forming a plurality of wire bonds on a first surface in the form of a conductive bonding surface of a structure comprising a patternable metallic element. The wire bonds are formed having bases joined to the first surface and end surfaces remote from the first surface. The wire bonds have edge surfaces extending between the bases and the end surfaces. The method also includes forming a dielectric encapsulation layer over a portion of the first surface of the conductive layer and over portions of the wire bonds such that unencapsulated portions of the wire bonds are defined by end surfaces or portions of the edge surfaces that are uncovered by the encapsulation layer. The metallic element is patterned to form first conductive elements beneath the wire bonds and insulated from one another by portions of the encapsulation layer.
US08835227B2	Semiconductor device fabrication method and semiconductor device A semiconductor device is manufactured by forming a first dielectric film on a substrate, forming an aperture in the first dielectric film, mounting a semiconductor chip in the aperture, forming a second dielectric film on the first dielectric film and the semiconductor chip, and forming an interconnection wiring structure on the second dielectric film. The second dielectric film secures the semiconductor chip without the need to etch the substrate or use an adhesive die attachment film.
US08835224B2	Distributing power with through-silicon-vias An integrated circuit with distributed power using through-silicon-vias (TSVs) is presented. The integrated circuit has conducting pads for providing power and ground located within the peripheral region of the top surface. A number of through-silicon-vias are distributed within the peripheral region and a set of TSVs are formed within the non-peripheral region of the integrated circuit. Conducting lines on the bottom surface are coupled between each peripheral through-silicon-via and a corresponding non-peripheral through-silicon-via. Power is distributed from the conducting pads to the TSVs within the non-peripheral region through the TSVs within the peripheral region, thus supplying power and ground to circuits located within the non-peripheral region of the integrated circuit chip.
US08835223B2	Chip assembly having via interconnects joined by plating An assembly and method of making same are provided. The assembly can be formed by juxtaposing a first electrically conductive element overlying a major surface of a first semiconductor element with an electrically conductive pad exposed at a front surface of a second semiconductor element. An opening can be formed extending through the conductive pad of the second semiconductor element and exposing a surface of the first conductive element. The opening may alternatively be formed extending through the first conductive element. A second electrically conductive element can be formed extending at least within the opening and electrically contacting the conductive pad and the first conductive element. A third semiconductor element can be positioned in a similar manner with respect to the second semiconductor element.
US08835221B2	Integrated chip package structure using ceramic substrate and method of manufacturing the same An integrated chip package structure and method of manufacturing the same is by adhering dies on a ceramic substrate and forming a thin-film circuit layer on top of the dies and the ceramic substrate. Wherein the thin-film circuit layer has an external circuitry, which is electrically connected to the metal pads of the dies, that extends to a region outside the active surface of the dies for fanning out the metal pads of the dies. Furthermore, a plurality of active devices and an internal circuitry is located on the active surface of the dies. Signal for the active devices are transmitted through the internal circuitry to the external circuitry and from the external circuitry through the internal circuitry back to other active devices. Moreover, the chip package structure allows multiple dies with different functions to be packaged into an integrated package and electrically connecting the dies by the external circuitry.
US08835214B2	Sputtering target and method for manufacturing semiconductor device An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited.
US08835210B2	Manufacturing method for solar cell The present invention reduces the time required to manufacture a solar cell. After etching main surfaces (10B1, 10B2) of a crystalline silicon substrate (10B) using one etching solution, the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B) are etched at a lower etching rate than the etching performed using the one etching solution by using another etching solution that has a higher concentration of etching components than the one etching solution. In this way, a textured structure is formed in the main surfaces (10B1, 10B2) of the crystalline silicon substrate (10B).
US08835204B2	Method for manufacturing multi-dimensional target waveguide grating and volume grating with micro-structure quasi-phase-matching A method for manufacturing a multi-dimensional target waveguide grating and volume grating with micro-structure quasi-phase-matching. An ordinary waveguide grating is used as a seed grating, and on this basis, a two-dimensional or three-dimensional sampling structure modulated with a refractive index, that is, a sampling grating, is formed. The sampling grating comprises multiple shadow gratings, and one of the shadow gratings is selected as a target equivalent grating. A sampled grating comprises Fourier components in many orders, that is, shadow gratings, a corresponding grating wave vector is [Formula 1], and the grating profile of all the shadow gratings changes with the sampling structure [Formula 2]. In a case where a seed grating wave vector [Formula 3] and a required two-dimensional or three-dimensional grating wave vector do not match, a certain Fourier periodic structure component of the Fourier components of the sampling structure is used to compensate for the wave vector mismatch. The manufacturing method may be applied to design and manufacture a multi-dimensional target waveguide grating and volume grating for any grating profile, and may simplify the grating manufacturing process and also make possible a variety of grating-based photon devices.
US08835198B2	Method for manufacturing LED An LED (light emitting diode) includes a base, a pair of leads fixed on the base, a housing secured on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity to receive the chip. The cavity includes an upper chamber and a lower chamber communicating with the upper chamber. The lower chamber is gradually expanded along a top-to-bottom direction of the LED, and the upper chamber is gradually expanded along a bottom-to-top direction of the LED. The encapsulant substantially fills the lower chamber and the upper chamber. A method for manufacturing the LED is also disclosed.
US08835194B2	Leakage measurement of through silicon vias A method of testing a semiconductor substrate having through substrate vias for current leakage which includes: forming a current leakage measurement structure that includes substrate contacts, sensing circuits to sense current leakage from the through substrate vias, the sensing circuits connected to the through substrate vias and to the substrate contacts so that there is a one-to-one correspondence of a substrate contact and sensing circuit to each through substrate via, and a built-in self test (BIST) engine to sense one of the through substrate vias for current leakage. A reference current is applied to the sensing circuits to set a current leakage threshold for the through substrate vias. A through substrate via is selected for sensing for current leakage. The sensing circuit senses the selected through substrate via to determine whether there is current leakage from the selected through substrate via.
US08835188B2	Screening assays and methods Screening assays and methods of performing such assays are provided. In certain examples, the assays and methods may be designed to determine whether or not two or more species can associate with each other. In some examples, the assays and methods may be used to determine if a known antigen binds to an unknown monoclonal antibody.
US08835176B2	Analysis of microbes from microcolonies by maldi mass spectrometry The invention relates to the cell disruption of microbes and the preparation of the microbe proteins for mass spectrometric analysis. The cells of microbes from microcolonies are disrupted by physical or chemical means directly on the nutrient medium. The released proteins are then transferred to sample supports by direct contact with their contact surfaces; electrophoresis can be used for assistance. Once the proteins are firmly adsorbed on the contact surfaces, they can be washed with water in order to remove substances which interfere with the ionization process. For analysis by matrix-assisted laser desorption (MALDI), the proteins are prepared on the contact surfaces of the sample supports with matrix substances to form MALDI samples; the sample supports are then introduced into a MALDI mass spectrometer for the acquisition of mass spectra. The microbes are identified by similarity comparisons between the mass spectra of the microbe proteins and similarly obtained reference spectra.
US08835175B2	Culture medium for human mesenchymal stem cells A culture medium for human mesenchymal stem cells (hMSC) includes a mesenchymal stem cell basal medium; human leucocyte/platelet coat lysate; insulin; sodium selenite; ethanolamine; and basic fibroblast growth factor. This culture medium is effective for growing hMSC lines, including those which do not grow in culture medium normally used for this type of cell.
US08835174B2	Hemostatic device A hemostatic device, method of making, and method of using for internal and external applications to wounds in the body of a patient to induce hemostasis at an anatomical site.
US08835172B2	Modular functional peptides for delivery of nanoparticles A peptide directs nanoparticles (such as quantum dots) to the plasma membrane of mammalian cells. A method of delivery of a nanoparticle to a plasma membrane of a cell includes providing to the cell a nanoparticle attached to a peptide configured to direct the nanoparticle the plasma membrane, and allowing the cell to take up the nanoparticle. The nanoparticle can be a FRET donor to an organic dye.
US08835168B2	Synthetic mammalian neuromuscular junction and method of making A method for forming neuromuscular junctions includes forming functional neuromuscular junctions between motoneurons and muscle cells by co-culturing one or more human motoneurons and one or more human muscle cells in a substantially serum-free medium. A synthetic mammalian neuromuscular junction includes a human motoneuron functionally linked to a human muscle cell in a substantially serum-free medium. An artificial substrate may be used to support the one or more neuromuscular junctions.
US08835161B2	Bacterial host cell for the direct expression of peptides Expression systems are disclosed for the direct expression of peptide products into the culture media where genetically engineered host cells are grown. High yield was achieved with a special selection of hosts, and/or fermentation processes which include careful control of cell growth rate, and use of an inducer during growth phase. Special universal cloning vectors are provided for the preparation of expression vectors which include control regions having multiple promoters linked operably with coding regions encoding a signal peptide upstream from a coding region encoding the peptide of interest. Multiple transcription cassettes are also used to increase yield. The production of amidated peptides using the expression systems is also disclosed.
US08835159B2	Static solid state bioreactor and method for using same A static solid state bioreactor and method of using same. The bioreactor comprises a vessel having an upper end and a lower end, the upper end having a sealable opening. A gas distribution system in communication with the upper end and the lower end of the vessel. A liquid distribution system in communication with the upper end of the vessel. A liquid recovery system in communication with the lower end of the vessel. A material removal system disposed at the lower end of the vessel for removing biomass from the vessel.
US08835152B2	Altering metabolism in biological processes Compositions of peptides and surface-active agents are described, as are methods of making and using such compositions. The compositions are capable of affecting metabolic rates in biological systems, and to accelerate nutrient uptake without a concomitant increase in biofilm production.
US08835149B2	DGAT genes comprising pleckstrin homology domains and methods of use for triglyceride production in recombinant microorganisms The present invention provides novel diacylglycerol acyltransferase (DGAT) genes comprising Pleckstrin Homology (PH) domains. The present invention also provides for recombinant cells, such as algae, transformed with acyltransferase genes, such as DGAT, comprising PH domains, and methods of using such recombinant cells to produce increased triglyceride levels.
US08835148B2	Production of nucleic acid The present invention provides a process for the production of nucleic acid encoding a target protein, which comprises: (a) providing an array of RNA or DNA molecules including one or more encoding the target protein; (b) generating a target protein from the array to form RNA-protein or DNA-protein complexes in which the RNA or DNA molecule is non-covalently or covalently bound to the complex; (c) separating the complexes into compartments wherein most or all of the compartments contain no more than one complex; (d) subjecting the complexes to reaction conditions which allow target protein activity; and (e) selecting nucleic acid encoding the target protein on the basis of the activity associated therewith, wherein when the complex is a DNA-protein complex in which the DNA is non-covalently bound, step b) is performed in the absence of separate compartments for each complex.
US08835143B2	Method for preparing hybrid cross-linked enzyme-silica aggregates The invention relates to a method for the preparation of hybrid cross-linked enzyme-silica aggregates including the steps of taking up enzyme molecules in a solvent, precipitating the enzyme molecules using a precipitation agent, and adding an alkoxysilane and crosslinking the mixture of alkoxysilane and precipitated enzyme aggregates, using a crosslinking agent comprising an aldehyde, to obtain hybrid crosslinked enzyme-silica aggregates.
US08835140B2	Methods using peracids for controlling corn ethanol fermentation process infection and yield loss A process for the use of peracid compositions to eliminate and/or control the growth of undesirable bacteria, including contaminating bacteria, in the fermentation production of alcohol is disclosed. Beneficially, the peracid compositions and methods of use of the same do not interfere or inhibit the growth or replication of yeast and have low or no adverse environmental impact.
US08835138B2	Glucose valve and other metabolite valves Aspects of the invention relate to the design and construction of Metabolite Valves, such as Glucose Valves, that can be used to divert metabolites from endogenous pathways toward alternative pathways in a cell.
US08835134B2	Cycloastragenol monoglucoside, preparation, pharmaceutical composition and application thereof This invention provides a method for preparing cycloastragenol monoglucoside CMG (cycloastragenol-6-O-β-D-glucoside), comprising the steps of: a. using astragaloside IV or Astragali extracts prepared by a conventional method as raw materials and adding an appropriate solvent thereinto to form a raw material solution; b. adding hydrolase and allowing for hydrolysis at a constant temperature to obtain a hydrolysate; c. separating the hydrolysate with macroporous adsorption resin; and d. obtaining the product by purification and separation. The present invention further provides cycloastragenol-6-O-β-D-glucoside prepared according to the method of this invention as well as its use in the preparation of a medicament for treating cardiovascular diseases and pharmaceutical compositions comprising the same.
US08835133B2	Humanized anti-beta7 antagonists and uses therefor The invention provides therapeutic anti-beta7 antibodies, compositions comprising, and methods of using these antibodies.
US08835132B2	Method for making acylated polypeptides The present invention related to a method of producing polypeptides in transformed host cells by expressing a precursor molecule of the desired polypeptide which are to be acylated in a subsequent in vitro step. The invention is also related to DNA-sequences, vectors and transformed host cells for use in the claimed method. Further, the present invention is related to certain precursors of the desired polypeptides and certain acylation methods. The invention provides a method for making polypeptides being preferentially acylated in certain lysine ε-amino groups.
US08835130B2	Tissue array production method Tissue array production method enables even roll-shaped tissue pieces having various diameters to be steadily fixed to a substrate block is provided. In a method in which roll-shaped tissue pieces formed by rolling sheet-like tissue pieces in the shape of a roll are arranged on a substrate in an array form, a tissue array is produced by placing a holding member which holds a plurality of roll-shaped tissue pieces so that their axis directions are vertically directed in a container into which a melted embedding medium is poured for its accumulation, to hold the respective roll-shaped tissue pieces in the holding member; pouring the embedding medium into the container, to form a substrate block constituted so that the plurality of roll-shaped tissue pieces is arranged in the array form; and slicing the substrate block so that the roll-shaped tissue pieces are ring-shaped.
US08835128B2	Identification method based on surface-enhanced Raman scattering This invention is related to a reproducible identification method based on surface-enhanced Raman scattering (SERS), in which bacterial samples are used in identification of bacteria by mixing with the concentrated silver and gold nanoparticles.
US08835122B2	Methods and system for the automated determination of immunofluorescent foci using a cell-based immunofluorescence assay using synthetic calibration particles The invention relates to a method for automated determination of immunofluorescent foci by means of an immunofluorescence assay using synthetic calibration particles, in addition to a system and kit for carrying out the method. In a preferred embodiment the method is characterized in that the immunofluorescent foci are gamma H2Ax foci.
US08835117B2	Nucleic acids for detection and discrimination of genotypes of Chlamydophila psittaci Methods of detecting Chlamydophila, including differentiating between species of Chlamydophila and/or strains of Chlamydophila psittaci are disclosed, for example to detect and genotype a Chlamydophila psittaci infection. A sample suspected of containing a nucleic acid of a Chlamydophila, is screened for the presence of that nucleic acid. The presence of the Chlamydophila nucleic acid indicates the presence of the Chlamydophila bacterium. Determining whether a Chlamydophila nucleic acid is present in a sample can be accomplished by detecting hybridization between a Chlamydophila specific primer, a Chlamydophila psittaci specific primer, and/or a Chlamydophila psittaci genotype-specific primer and the Chlamydophila nucleic acid containing sample. Thus, primers for the detection, species-specific and/or genotype-specific identification of Chlamydophila psittaci are disclosed. Kits that contain the disclosed primers also are disclosed.
US08835114B2	Compositions, reaction mixtures and methods for detecting nucleic acids from multiple types of human papillomavirus Nucleic acid oligonucleotide sequences are disclosed which include amplification oligomers and probe oligomers which are useful for detecting multiple types of human papillomaviruses (HPV) associated with cervical cancer. Methods for detecting multiple HPV types in biological specimens by amplifying HPV nucleic acid sequences in vitro and detecting the amplified products are disclosed.
US08835110B2	DNA integrity assay (DIA) for cancer diagnostics, using confocal fluorescence spectroscopy The present invention relates, e.g., to a method for determining the size distribution of DNA molecules in a sample comprising cell-free nucleic acid, comprising labeling the DNA with a fluorescent dye in a stoichiometric manner, subjecting the DNA to molecular spectroscopy (e.g., cylindrical illumination confocal spectroscopy), analyzing suitable fluorescent burst parameters of the labeled DNA, and conducting single molecule DNA integrity analysis of the labeled DNA molecules in the sample. In one embodiment of the invention, the method is used as a diagnostic method for detecting cancer.
US08835105B2	Sperm-specific cation channel, CatSper4, and uses therefor Nucleic acid and protein sequences relating to a cation channel which is sperm-specific (CatSper4) are disclosed. The CatSper4 protein is shown to be specifically expressed in sperm. Nucleic acids, vectors, transformed cells, transgenic animals, polypeptides, and antibodies relating to the CatSper4 gene and protein are disclosed. Also provided are methods of in vitro fertilization and contraception, methods of identifying modulators of CatSper4 activity, methods of genotyping subjects with respect to CatSper4, and methods of diagnosing and treating CatSper4-mediated disorders, including infertility. Related business methods are also disclosed.
US08835101B1	Method for fabricating a circuit A method for fabricating a circuit, by defining a first set of resist features on a substrate and corresponding to a first mask layout, followed by defining a second set of resist features on the substrate corresponding to a second mask layout, wherein the second set adds to the first set for rectifying an error in either mask layout. In another aspect, the method is by defining a first set of resist features on a substrate and corresponding to a first mask layout that has an error, etching the substrate while the first set protects selected regions, defining a second set of resist features on the substrate and corresponding to a second mask layout, followed by etching the substrate to selectively remove portions of the selected regions for rectifying the error.
US08835096B2	Chemically amplified negative resist composition and patterning process A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.
US08835092B2	Resist underlayer film composition, process for forming resist underlayer film, patterning process and fullerene derivative There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
US08835090B2	Developing apparatus and developing method An object of the present invention is to provide a developing apparatus which is less affected by usage environments, has high development efficiency for long term use and can provide a high quality image without image density non-uniformity.The present invention relates to a developing apparatus wherein a magnetic toner-carrying member has a work function value at the surface thereof within a specific range, a toner regulating member which regulates toner carried on the magnetic toner-carrying member is made of a specific material at a portion contacting the magnetic toner, the magnetic toner has an average circularity of 0.950 or more and the magnetic toner has a surface tension index within a specific range.
US08835088B2	Recycled polyethylene terephthalate-based toner The present disclosure describes toner comprising a portion of resin comprising a polyethylene terephthalate oligomer.
US08835086B2	Electrostatic image developing toner An electrostatic image developing toner including: a binder resin; a colorant; and a wax, wherein the intensity ratio of an absorbance at 2,850 cm−1 derived from the wax to an absorbance at 828 cm−1 derived from the binder resin, represented by “absorbance derived from the wax/absorbance derived from the binder resin”, is in the range of 0.1 to 0.5, where the absorbances are measured by FTIR-ATR, and the intensity ratio serves as a value for determining the amount of the wax present within 0.3 μm in depth from surfaces of particles of the toner after the toner has been heated to 140° C. and then cooled, and wherein the toner has a storage elastic modulus of 5,000 Pa or greater at 140° C.
US08835084B2	Electrophotographic photoreceptor, and image forming method, image forming apparatus and process cartridge using same An electrophotographic photoreceptor including an electroconductive substrate, a charge generation layer located overlying the electroconductive substrate, a hole transport layer located on the charge generation layer, and a hole transport protective layer located on the hole transport layer. The hole transport protective layer includes a three-dimensionally crosslinked material obtained by irradiating a composition including at least a radically polymerizable hole transport compound with ultraviolet rays or electron beams so that the radically polymerizable hole transport compound causes chain polymerization. In addition, the protective layer includes a specific cyano-containing styryl aromatic compound or a specific cyano-containing distyryl aromatic compound.
US08835083B2	Manufacturing method of photomask, method for optical proximity correction, and manufacturing method of semiconductor device A manufacturing method of a photomask by which a resist pattern corresponding to a pattern with designed values can be formed, a method for optical proximity correction, and a manufacturing method of a semiconductor device are provided. Proximity design features that are close to each other and estimated to violate a mask rule check are extracted. In the proximity design features, correction prohibited regions where optical proximity correction is not carried out are set based on the distance between the features obtained from the extracted proximity design features and the resolution of an exposure device. Optical proximity correction is carried out on the proximity design features with the correction prohibited regions excluded to obtain corrected proximity patterns. A predetermined mask material is patterned by carrying out electron beam lithography based on the corrected proximity pattern data.
US08835082B2	Method and system for E-beam lithography with multi-exposure The present disclosure provides a method for electron-beam (e-beam) lithography patterning. The method includes forming a resist layer on a substrate; performing a first e-beam exposure process to the resist layer according to a first pattern; performing a second e-beam exposure process to the resist layer according to a second pattern, wherein the second patterned is overlapped to the first pattern on the resist layer; and developing the resist layer.
US08835080B2	Electrolyte mebrane formation method, membrane-electerode assembly, and membrane-electrode assembly manufacturing method A membrane-electrode assembly a solid electrolyte type-structure including a first electrode, an electrolyte membrane, and a second electrode and is formed on one single face of a porous metal support. The electrolyte membrane is obtained by firing a first electrolyte film formed on the first electrode and a second electrolyte film, which has a higher degree of fluidity than the degree of fluidity of the first electrolyte film.
US08835079B2	Fuel cell separator plate surface treatment by laser ablation A composite separator plate for use in an electrochemical fuel cell as well as a method of forming same is disclosed. The plate may be formed of polymeric material and electrically conductive material having a non-conductive polymeric outer layer by compression molding, or alternately of a metallic material having an outer metal oxide layer. Contact regions of the plate surface are subsequently ablated with a laser to remove the outer layer of material from the plate. The removal of the outer layer reduces the contact resistance of the plate when used in an electrochemical fuel cell stack, while offering adequate strength and corrosion resistance for the fuel cell stack environment.
US08835076B2	Electrolyte membrane and fuel cell using the same In a fuel cell 1 including a membrane electrode assembly 2 which includes a reinforcing-membrane-type electrolyte membrane 10A, a dry-up on the anode side is suppressed by actively forming a water content gradient in the electrolyte membrane to enhance water back-diffusion effect from the cathode side to the anode side. For that purpose, two sheets of expanded porous membranes 12a and 12b having different porosities are buried, as reinforcing membranes, in electrolyte resin 11 to obtain the reinforcing-membrane-type electrolyte membrane 10A. The reinforcing-membrane-type electrolyte membrane 10A is used to form the membrane electrode assembly 2, which is sandwiched by separators 20 and 30 such that the side of a reinforcing membrane 12b with a larger porosity becomes the cathode side, thus obtaining the fuel cell 1. When one sheet of the reinforcing membrane is buried, the reinforcing membrane is offset to the anode side to be buried in the electrolyte resin.
US08835073B2	Polymer membrane for battery, method of preparing same and battery including same Disclosed is a polymer membrane for a battery including a porous support including a fiber including a core including a high melting-point polymer; and a sheath including a low melting-point polymer surrounding the core, and a method of preparing the same. The polymer membrane for a battery may further include a proton conductive polymer.
US08835070B2	Fuel cell header wedge A fuel cell system may include a fuel cell stack having a header and active area in fluid communication with the header. The fuel cell system may also include a wedge disposed within the header and configured to alter the cross-sectional area of the header along the length of the stack such that, during operation of the stack, a flow velocity of gas through the active area is generally constant.
US08835068B2	Fuel cell According to one embodiment, a fuel cell includes an electric-power generator, a fuel distribution mechanism, and a pump. The electric-power generator includes a membrane electrode assembly including an anode, a cathode, and an electrolytic membrane. The fuel distribution mechanism includes a container and a thin tube. The container includes a fuel discharge surface, and contains the electric-power generator inside. The thin tube is formed in the container in a manner that a fuel outlet and a fuel inlet communicate with each other. The pump is connected directly to the fuel inlet.
US08835067B2	Saturated vapor block for frozen fuel cell power plant A fuel cell power plant includes a cell stack assembly having an anode and a cathode. A component is arranged in fluid connection with at least one of the anode and cathode. The component has a first shut-down cooling rate. A heat exchanger is arranged in fluid communication with and between the component and one of the anode and cathode. The heat exchanger has a second shut-down cooling rate greater than the first shut-down cooling rate. Water vapor within the fuel cell power plant outside of the cell stack assembly will condense and freeze in the heat exchanger rather than the component, avoiding malfunction of the component upon start-up in below freezing environments.
US08835062B2	Enclosed separator unit for a gas supply of a fuel cell system An enclosed separator unit for incorporation into a gas supply device of a fuel cell system, to separate liquid from the gas supply device, includes a separator for separating the liquid. A housing encloses the separator unit which is arranged in a gas space 21 in the housing and/or is in thermal contact with the gas space. A line system is provided for discharging the liquid from the separator, and at least one fluid dynamically active functional component is arranged in the line system, in the gas space 21.
US08835061B2	Metal oxygen battery There is provided a metal oxygen battery which uses an oxygen-storing material containing YMnO3 as a positive electrode material, and can reduce the discharge overpotential. The metal oxygen battery 1 has a positive electrode 2 to which oxygen is applied as an active substance, a negative electrode 3 to which metallic lithium is applied as an active substance, and an electrolyte layer 4 interposed between the positive electrode 2 and the negative electrode 3. The positive electrode 2 contains, as an oxygen-storing material, a composite metal oxide obtained by crushing and mixing a yttrium salt, a manganese salt and an organic acid, primarily calcining the mixture, and thereafter, adding a zirconium salt to the obtained primarily calcined material, and secondarily calcining the mixture, the composite metal oxide containing YMnO3 and ZrO2.
US08835060B2	Silicon-air batteries Silicon-oxygen batteries comprising a silicon anode as chemical fuel, an air-cathode for dissociating oxygen, and an electrolyte, and applications using the same are provided. The silicon-batteries may utilize air for generating oxygen.
US08835059B2	Lithium rechargeable battery, and separator for lithium rechargeable battery A lithium rechargeable battery, which includes a separator having excellent mechanical strength such as elastic strength, swelling resistance, heat resistance, and peel strength. The lithium rechargeable battery includes a cathode, an anode, a separator for separating both electrodes from each other, and a non-aqueous electrolyte, wherein the separator includes a porous membrane formed of a ceramic material and a binder, and the binder has an elongation ratio of 200 to 300%.
US08835057B2	Anode for secondary battery and secondary battery having the same The present invention relates to an anode for a secondary battery, comprising: a spiral anode having at least two anode wires which are parallel to each other and spirally twisted, each of the anode wires having an anode active material layer coated on the surface of a wire-type current collector; and a conductive layer formed to surround the spiral anode.The anode active material layer of the spirally-twisted has a thin thickness as compared with a single strand of an anode having the same anode active material. Therefore, Li ions can be easily diffused to enhance battery performance. Also, the anode of the present invention has a conductive layer on the surface thereof to prevent or alleviate the release of an anode active material which is caused by volume expansion during charging and discharging processes, and to solve the isolation of the anode active material.
US08835051B2	Negative active material for rechargeable lithium battery, method for preparing same, and rechargeable lithium battery including same Negative active materials for rechargeable lithium batteries are provided. One negative active material includes a metal matrix, and an intermetallic compound including a Si active metal and an additive metal dispersed in the metal matrix. The additive metal may be Ca, Mg, Na, K, Sr, Rb, Ba, Cs, or a combination thereof. The metal matrix may comprise Cu and Al. The negative active material may comprise a X(aM-bSi)—Y(cCu-dAl) material, where X is from about 30 to about 70 wt %, Y is from about 30 to about 70 wt %, X+Y is 100 wt %, a+b is 100 wt %, a is from about 20 to 80 wt %, b is from about 20 to 80 wt %, c+d is 100 wt %, c is from about 80 to about 95 wt %, d is from about 5 to about 20 wt %, and M may be Ca, Mg, Na, K, Sr, Rb, Ba, Cs, or a combination thereof.
US08835050B2	Anode substrate An anode substrate which enables achievement of a battery having a high output voltage and a high energy density, and being superior in charge and discharge cycle characteristics; a secondary cell in which the anode substrate is used; a resin composition for use in forming the anode substrate; and a method for producing the anode substrate are provided. According to anode substrate 10 including metal film 13 formed on support 11 provided with patterned organic film 12 molded by a thermal imprint process or a photoimprint process, a battery having a high output voltage and a high energy density, and being superior in charge and discharge cycle characteristics can be provided.
US08835048B2	Power storage device An electrode for a power storage device with less deterioration due to charge and discharge and a power storage device using the electrode are provided. In the electrode for a power storage device and the power storage device, a region including a metal element which functions as a catalyst is selectively provided over a current collector, and then, an active material layer is formed. By selectively providing the region including the metal element, a whisker can be effectively generated in the active material layer over the current collector, and the whisker generation region can be controlled. Accordingly, the discharge capacity can be increased and the cycle characteristics can be improved.
US08835047B2	Negative electrode active material for non-aqueous electrolyte secondary battery cell, non-aqueous electrolyte secondary battery cell, battery pack and method for manufacturing the negative electrode active material for non-aqueous electrolyte secondary battery cell According to one embodiment, a negative electrode active material for a non-aqueous electrolyte secondary battery cell includes a composite. The composite includes a carbonaceous material, a silicon oxide dispersed in the carbonaceous material, and a silicon dispersed in the silicon oxide. A half-value width of a diffraction peak of a Si (220) plane in powder X-ray diffraction measurement of the composite is in a range of 1.5° to 8.0°. A mean size of a silicon oxide phase is in a range of 50 nm to 1,000 nm. A value of (a standard deviation)/(the mean size) is equal to or less than 1.0 where the standard deviation of a size distribution of the silicon oxide phase is defined by (d84%−d16%)/2.
US08835042B2	Battery pack A battery pack includes: a core pack including a bare cell and a protection circuit module electrically coupled to the bare cell; a lower case receiving the core pack and having a receiving groove on a top surface of a sidewall of the lower case; and a cover plate including a base cover covering a front surface of the bare cell and side covers, a corresponding one of the side covers being inserted into the receiving groove, wherein each of the side covers is bent at least once.
US08835041B2	Electrode materials for sodium batteries The present invention provides an electrode material suitable for use as a cathode in a sodium electrochemical cell or battery, the electrode comprising a layered material of formula NacLidNieMnfMzOb, wherein M comprises one or more metal cation, 0.24≦c/b≦0.5, 0
US08835039B2	Battery cooling plate and cooling system A battery module according to one embodiment of this disclosure includes a battery pack including multiple spaced apart battery cells, and a cooling system having multiple cooling plates providing a cooling plenum. The cooling plates are arranged in an alternating relationship between the battery cells, with each cooling plate including at least a first cooling channel and a second cooling channel. The first cooling channel has a first shape and is arranged in a first thermal region, and the second cooling channel has a second shape different than the first shape, and is arranged in a second thermal region different than the first thermal region.
US08835035B2	Battery pack A battery pack includes a plurality of battery modules each comprising a plurality of battery cells; and a heat absorber mounted adjacent to at least one of the battery modules, wherein the heat absorber includes a phase change material.
US08835032B2	Battery module A battery module in which the temperature of a cell with an increased high temperature due to an abnormal state can be quickly reduced so that the high temperature does not affect adjacent cells is provided.A battery module 200 has a configuration in which a plurality of cells 100 as secondary batteries are housed in a case 90 having a plurality of housing parts housing, but not in contact with, the cells 100, and when a gas is generated in one of the cells 100 to cause the cell 100 to expand, this cell 100 comes into contact with the associated one of the housing parts.
US08835031B2	Rechargeable battery A rechargeable battery including an electrode assembly including a negative electrode and a positive electrode; a case housing the electrode assembly; a cap plate coupled to an opening of the case; a negative terminal and a positive terminal penetrating the cap plate and connected to the negative electrode and the positive electrode, respectively; an external short-circuit unit separately provided between the negative terminal and the cap plate and configured to short-circuit the negative terminal on the cap plate; and a thermistor for connecting the positive terminal and the cap plate, wherein the thermistor is configured to have reduced resistance when its temperature is increased.
US08835025B2	Battery pack having a combined bare cell, protection circuit module and top case A battery pack that implements an electrical coupling structure between a bare cell and a protection circuit module without welding includes: a bare cell including an electrode assembly, a can receiving the electrode assembly and a cap assembly sealing an opening of the can; a protection circuit module provided with a pin that is electrically coupled to an electrode terminal of the bare cell; and a top case, receiving the protection circuit module, and combined with the bare cell.
US08835021B2	Materials for organic electroluminescence devices The invention relates to mononuclear, neutral copper (1) complexes having a bidentate ligand that binds via nitrogen, and two phosphane or arsane ligands, to the use thereof for producing electronic components, and to electronic devices comprising said complexes.
US08835011B2	Cover assembly for electronic display devices A cover assembly for a display device, such as a three-dimensional liquid crystal (3-D LCD) display. The cover assembly includes an aluminosilicate glass substrate that is substantially free of retardance-induced visual defects and has a thickness of less than 2 mm, a retardance of less than or equal to 5 nm over an area of at least 170 in2 (20 in diagonal), a 4-point bend strength of greater than 150 MPa.
US08835010B2	Belt member, fixing device, and image forming apparatus Disclosed are a belt member having high wear resistance and thereby capable of maintaining its initial surface properties for a long period of time and a fixing device provided with, the belt member, and an image forming apparatus. The belt member has a belt shape, and its surface is formed of a cured resin including a structural unit derived from urethane (meth)acrylate (A) having at least three (meth)acryloyloxy groups per molecule, a structural unit derived from a polyfunctional monomer (B) having no urethane bond and having at least three (meth)acryloyloxy groups per molecule, and a structural unit derived from a fluorine-modified acrylate (C). The cured resin contains 18 to 63% by mass of the structural unit derived from the urethane(meth)acrylate (A), 18 to 63% by mass of the structural unit derived from the polyfunctional monomer (B), and 10 to 40% by mass of the structural unit derived from the fluorine-modified acrylate(C).
US08835008B2	Process for the production of a dark-color multi-layer coating A process for the production of a dark-color multi-layer coating, comprising the successive steps: (1) applying an NIR-opaque coating layer A′ from a pigmented, solvent- or waterborne coating composition A to a substrate, (2) applying a coating layer B′ from a pigmented coating composition B onto the substrate provided with coating layer A′, wherein the pigment content of coating composition A consists 90 to 100 wt. % of at least one 10 to 80 nm thick aluminum flake pigment and 0 to 10 wt. % of at least one further pigment, which is selected in such a way that NIR-opaque coating layer A′ exhibits low NIR absorption, wherein the pigment content of coating composition B consists 50 to 100 wt. % of at least one black pigment with low NIR absorption and 0 to 50 wt. % of at least one further pigment, which is selected in such a way that coating layer B′ exhibits low NIR absorption and that the dark-color multi-layer coating exhibits a brightness L* (according to CIELab*, DIN 6174), measured at an illumination angle of 45 degrees to the perpendicular and an observation angle of 45 degrees to the specular, of at most 10 units, wherein the sum of the respective wt. % equals 100 wt. %, and wherein the coating layers A′ and B′ are cured.
US08835006B2	Carbon nanohorn carried material and process for producing carbon nanotube A carbon nanohorn carried material for producing a carbon nanotube by a chemical vapor deposition (CVD) method, including a catalytic metal or a compound thereof contained inside carbon nanohorns or supported on exterior walls of the carbon nanohorns is provided. A carbon nanotube is produced by a CVD reaction using the carbon nanohorn carried material. A novel technical means for producing a carbon nanotube which does not use any noncarbon type carrier, can easily collect and purify the carbon nanotube and can control the length of the carbon nanotube can be provided.
US08835005B2	Process for producing granules The present invention relates to a process for the preparation of granules comprising the steps of: providing a granulation zone comprising particles, the particles being kept in motion; providing a first feed stream comprising a liquid composition into the granulation zone, the liquid composition being applied onto or over the moving particles in the granulation zone; withdrawing a product stream comprising granules from the granulation zone, the granules being the result of layered growth of the moving particles in the granulation zone; wherein a second feed stream comprising granulation nuclei is fed into the granulation zone, wherein the granulation nuclei have a particle size distribution characterized by a standard deviation of the particle size that is less than 15% of the mean particle size, and wherein the second feed stream comprises between 0.05 wt % and 50 wt % of the product stream.
US08835004B2	Sintering support comprising fully stabilized zirconia outer surface and crystalline phase composition, and method of making thereof A sintering support comprising a fully stabilized zirconia outer surface; wherein the sintering support withstands sintering a ceramic part in contact with the outer surface without adhesion between the outer surface and the ceramic part, and methods of making and using the sintering support are disclosed.
US08835003B2	Porous metal oxide particles and their methods of synthesis Methods are generally disclosed for synthesis of porous particles from a solution formed from a leaving agent, a surfactant, and a soluble metal salt in a solvent. The surfactant congregates to form a nanoparticle core such that the metal salt forms about the nanoparticle core to form a plurality of nanoparticles. The solution is heated such that the leaving agent forms gas bubbles in the solution, and the plurality of nanoparticles congregate about the gas bubbles to form a porous particle. The porous particles are also generally disclosed and can include a particle shell formed about a core to define an average diameter from about 0.5 μm to about 50 μm. The particle shell can be formed from a plurality of nanoparticles having an average diameter of from about 1 nm to about 50 nm and defined by a metal salt formed about a surfactant core.
US08834993B2	Thermoplastic single ply protective covering A thermoplastic single ply protective roof covering may have two pressure sensitive rubber-based adhesive backings These dual-adhesive backings may be used to provide for a non-heat welded seam having a combination of good seam strength and fire performance.
US08834992B2	Thermoplastic planks and methods for making the same A thermoplastic laminate plank is described wherein the thermoplastic laminate plank comprises a core, a print layer, and optionally an overlay. The core comprises at least one thermoplastic material and has a top surface and bottom surface wherein a print layer is affixed to the top surface of the core and an overlay layer is affixed to the top surface of the print layer. Optionally, an underlay layer can be located and affixed between the bottom surface of the print layer and the top surface of the core. A method of making the thermoplastic laminate plank is further described which involves extruding at least one thermoplastic material into the shape of the core and affixing a laminate on the core, wherein the laminate comprises an overlay affixed to the top surface of the print layer and optionally an underlay layer affixed to the bottom surface of the print layer.
US08834988B2	Precision spacing for stacked wafer assemblies An assembly including a first wafer, a second wafer, a spacing wafer configured to be positioned between the first wafer and the second wafer, and a plurality of spacing elements configured to be positioned within the spacing wafer and to contact the first wafer and the second wafer, the spacing elements sized to define a first spacing distance between the first wafer and the second wafer.
US08834987B2	Woven ground cover materials A ground cover sheet material for use in agriculture is woven from warp and weft tapes of a plastics material and at least some of the warp or weft tapes have a greater width and/or thickness than the weft or warp tapes, or the material includes a higher density of warp or weft tapes relative to the weft or warp tapes per unit area, or includes slits through the tapes, or the tapes are folded lengthwise, all optionally in one or more high water flow through lengthwise extending parts of the material. In one embodiment the material is woven from warp or weft tapes some having a rectangular or square cross-section and some having a circular or oval cross-section. In some embodiments the material is also a reflective material.
US08834986B2	Continuous web of a plurality of tabs and methods of making and using the same An elongate continuous material web is disclosed that includes a plurality of adjacent tabs arranged in a longitudinal direction of the web with connection regions between adjacent tabs. Each connection region includes three or more incisions that extend in the transverse direction of the web and are arranged in a manner such that at least one extensible connection member, extensible in the longitudinal direction of the web, is formed. At least one incision forms a side incision that travels through one longitudinal edge of the web, and at least one incision forms a further side incision that travels through the other longitudinal edge of the web. Also disclosed are a method for making such a web, a method for manufacturing a tab from such a web, a method for manufacturing an absorbent hygiene product with the help of such a web, and a cutting device to produce such a web.
US08834984B2	Stitch bonded wipe A disinfecting cleaning wipe of stitch-bonded construction. The wipe includes a stitching substrate of fibrous nonwoven material having a mass per unit area of not more than 30 grams per square meter. A first plurality of stitching yarns is disposed in stitched relation through the stitching substrate in a pattern of substantially parallel linear stitch lines extending in a first direction across the stitching substrate. At least a second plurality of stitching yarns is disposed in stitched relation through the stitching substrate in a repeating zigzag pattern to define a first group of surface yarn float segments extending diagonally between stitch positions at opposing linear stitch lines. A disinfecting solution at least partially saturates the cleaning wipe.
US08834980B2	Biocomposite material A biocomposite material (1) and methods of production thereof are described. The biocomposite material (1) exhibits a physical stiffness, strength and toughness comparable to known glass fiber composites while its composition makes it inherently impermeable to water. A general formulation for the biocomposite material (1) is given by the expression: Cel(1-x-y) HPIx HPOy where “Cel” represents cellulose fragments (2), “HPI” represents hydrophilic binders (4), “HPO” represents hydrophobic binders (5) and (x) and (y) quantify the percentage by weight of the hydrophilic (4) and hydrophobic binders (5) present within a material, respectively. The described properties of the biocomposite material (1) are achieved when (x) is within the range of from 0.05 to 0.55 and (y) is within the range of from 0.05 to 0.65.
US08834979B2	Bag for forming an implantable artificial organ A pouch for forming an implantable artificial organ, including a closed shell provided in a semi-pervious membrane. The pouch further includes a sheet contained within the shell, the sheet including projections on the surface thereof for maintaining a space for cells between the sheet and the shell.
US08834975B1	Independent block building system A modular block system that is aesthetically and functionally versatile by providing a plurality of independent puzzle-like block members to form furniture, table, wall and floor coverings.
US08834974B1	Decorative decal and adhesive system for application to vulcanized rubber articles The system (10) includes at least one elastomeric, vulcanizable ink (18) that defines a decorative decal image (20). The decal image (20) has perimeter edges (22) and a display area (24) extending between the perimeter edges (22). The vulcanizable ink is vulcanized upon a carrier sheet (12). A heat-activated adhesive layer (26) is applied to overlie the display area (24) of the decal image (20), and the heat-activated adhesive layer (26) is also partially activated upon the display area (24) of the decal image (20). The decorative decal image (20) having the partially activated adhesive layer (26) is then thermally transferable to a vulcanized rubber product (28) such as a side wall (30) of an automotive tire (32), after which the carrier sheet (12) is removed.
US08834972B2	Coating substrates for catalysts in bundles The invention relates to a process and an apparatus for coating a plurality of catalyst support bodies.
US08834969B2	Method for manufacturing workpieces and apparatus For vacuum treatment of workpieces by a multitude of distinct processing stations (P11-P1n, P21-P2m) the processing stations are grouped in two groups (I and II). The workpieces are handled towards and from the processing stations of the first group (I) simultaneously, whereat the workpieces are treated by the processing stations of the second group (II) in a selectable individual sequence.
US08834966B2	Coated microfluidic devices and methods of making We describe a method of layer-by-layer deposition of a plurality of layers of material onto the wall or walls of a channel of a microfluidic device, the method comprising: loading a tube with a series of segments of solution, a said segment of solution bearing a material to be deposited; coupling said tube to said microfluidic device; and injecting said segments of solution into said microfluidic device such that said segments of solution pass, in turn, through said channel depositing successive layers of material to perform said layer-by-layer deposition onto said wall or walls of said channel. Embodiments of the methods are particularly useful for automated surface modification of plastic, for example PDMS (Poly(dimethylsiloxane)), microchannels. We also describe methods and apparatus for forming double-emulsions.
US08834961B2	Magnetic recording medium manufacturing apparatus Provided is a magnetic recording medium manufacturing apparatus capable of forming a lubricant film with a uniform thickness on the surface of a magnetic recording medium. The magnetic recording medium manufacturing apparatus includes a hanger mechanism (2) that is inserted into a central hole (100a) of a magnetic recording medium (100) and supports the magnetic recording medium (100) in a suspended state and a lifting mechanism (3) that lifts and lowers one of the hanger mechanism (2) and the dip tank (1) relative to the other. The hanger mechanism (2) includes supporting plates (4a, 4b) that have upper ends coming into contact with an inner circumferential portion of the magnetic recording medium (100) and baffle plates (7a, 7b) that have upper ends disposed below the upper ends of the supporting plates (4a, 4b) such that a gap is formed between the upper end of the baffle plate and the inner circumferential portion of the magnetic recording medium (100) and are provided so as to face the supporting plates (4a, 4b).
US08834951B2	Dry glassy composition comprising a bioactive material The present invention relates to formulations and methods for stabilizing and protecting of biologic materials during harsh storing and use conditions, wherein the formulations relate to embedded bioactive materials and biologics, including live bacteria, in a protective glassy matrix.
US08834950B2	Method for inhibiting the deterioration of eating-quality characteristics of foods containing gelatinized starch An object of the present invention is to provide a method for inhibiting the deterioration of eating-quality characteristics of a food containing gelatinized starch and to keep their eating-quality characteristics as just prepared after a relatively prolonged storage under freezing, refrigerating, chilling or room temperature. The present invention achieves the above object by a method of permeating of maltose and/or α,α-trehalose or saccharides comprising the same and other oligosaccharides in a prescribed ratio into the above food containing gelatinized starch by admixing the saccharide to the food and holding them at relatively high temperature for a prescribed period.
US08834944B2	Ointment for the topical treatment of haemorrhoids The present invention provides an ointment comprising aqueous extract of fig leaves, horse chestnut, artichoke leaves and walnut shells, for the treatment of hemorrhoids; a method of manufacturing such an ointment; and the use of fig leaves, artichoke leaves or walnut shells for the manufacture of a medicament for the treatment of hemorrhoids. Preferably, the ointment further comprises lanolin and petroleum jelly (Vaseline). Preferably, the method comprises extracting fig leaves, horse chestnut, artichoke leaves and/or walnut shells using heated water, and admixing thereto lanolin and petroleum jelly (Vaseline) so as to result in the ointment. The ointment preferably further comprises ‘Huile de Cade’.
US08834940B2	Compositions and method for hair loss prevention A formulation for hair loss prevention comprising at least one hair loss preventive ingredient known to inhibit the hormonal mechanism underlying androgenetic hair loss and a mixture of water and at least one aprotic organic solvent capable of solubilizing sebum and allowing the hair loss preventive ingredient to reach the skin and/or hair follicle, and methods of using the same.
US08834935B2	Bone graft and biocomposite for prosthetic dentistry A bone graft or biocomposite for treating osseous defects and neogenesis of bone which is a composite of a biodegradable polymer and granules of beta-tricalciumphosphate, further comprising as active ingredient and embedded in the biodegradable polymer a physiologically effective amount of underglycosylated recombinant human BSP as a multi-dental clathrate with a basic organic compound which simulataneously is active as a plasticizer for the biodegradable polymer. The biocomposite is moldable and shapeable, hardens rapidly in situ when placed by surgery or prosthetic dentistry and which furthers osseous repair and the healing of damage or diseased tissues and lesions.
US08834932B2	Anticoagulant-conjugated carbon nanocapsule, antithrombotic agent containing thereof The embodiments provide a carbon nanocapsule conjugated with at least one of the anticoagulants on the surface and an antithrombotic drug containing the anticoagulant-conjugated carbon nanocapsule as an active ingredient. The anticoagulant-conjugated carbon nanocapsule has less cytotoxicity and good biocompatibility. A method for preparing the anticoagulant-conjugated carbon nanocapsule is also provided.
US08834931B2	Dry powder formulation containing tiotropium for inhalation The present invention is related to a dry powder formulation containing tiotropium to be administered via inhalation, the use of said formulation in the treatment of respiratory diseases especially asthma and COPD (Chronic obstructive pulmonary disease), and the production process of said formulation.
US08834930B2	Pulmonary delivery of a fluoroquinolone A composition for pulmonary administration comprises a fluoroquinolone betaine, such as ciprofloxacin betaine, and an excipient. In one version, the particles have a mass median aerodynamic diameter from about 1 μm to about 5 μm, and the fluoroquinolone has a half life in the lungs of at least 1.5 hours. The composition is useful in treating an endobronchial infection, such as Pseudomonas aeruginosa, and is particularly useful in treating cystic fibrosis.
US08834929B2	Drying of drug-containing particles A secondary drying process is disclosed for removing residual solvent from drug-containing particles that have been formed by solvent-based processes.

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