| Document | Document Title |
|---|---|
| US08742773B2 |
Capacitance detection in electrochemical assay with improved response
Systems and methods are provided to determine a capacitance of an electrochemical biosensor test cell of a test strip via determination of a phase angle between an output signal and input oscillating signal from the electrochemical test cell with measurement of an amplitude of the output signal from the electrochemical test cell along with conversion of the measured amplitude into a complex impedance of the electrochemical test cell based on the oscillating signal, phase angle and electrical resistance between the test cell and the connectors to derive a capacitance of the electrochemical test cell based on the complex impedance and predetermined frequency of the electrochemical test cell. |
| US08742772B2 |
Touch panel sensor
A touch panel sensor with which unevenness of interference can be reduced is provided. A touch panel sensor of the present invention includes a film base material, a first transparent electrode pattern formed on a first face of the film base material, a first adhesive layer laminated on the first face of the film base material so as to cover the first transparent electrode pattern, a second transparent electrode pattern formed on a second face of the film base material, and a second adhesive layer laminated on the second face of the film base material so as to cover the second transparent electrode pattern, and the film base material has an in-plane phase difference of λ/4 with respect to a wavelength λ in the visible light region. |
| US08742769B2 |
Sensor probe and methods of assembling same
A method of assembling a sensor probe for use in a sensor assembly is provided. The method includes providing an emitter configured to generate at least one forward propagating electromagnetic field from at least one microwave signal and to generate at least one backward propagating electromagnetic field. A data conduit is coupled to the emitter. Moreover, a ground conductor is extended substantially circumferentially about the data conduit. The ground conductor is configured to substantially reduce electromagnetic radiation within the sensor assembly. |
| US08742767B2 |
Parameter estimation system and method for an induction motor
A method of estimating stator resistance of an induction motor includes applying voltage pulses through two phase paths of the motor for a plurality of electrical cycles to inject current in the motor, wherein the voltage pulses are applied until rotor flux of the motor is substantially stabilized and measuring stator voltage and stator current in response to the applied voltage pulses for each of the plurality of electrical cycles. The method also includes calculating the stator resistance based upon the measured stator voltages and the stator currents. |
| US08742766B2 |
Stacked via structure for metal fuse applications
A back end of the line (BEOL) fuse structure having a stack of vias. The stacking of vias leads to high aspect ratios making liner and seed coverage inside the vias poorer. The weakness of the liner and seed layers leads to a higher probability of electromigration (EM) failure. The fuse structure addresses failures due to poor liner and seed coverage. Design features permit determining where failures occur, determining the extent of the damaged region after fuse programming and preventing further propagation of the damaged dielectric region. |
| US08742763B2 |
Battery module state detection method
The present invention provides a battery module state detection method. The battery module includes a battery unit and is connected to a load. The method for detecting the battery module status includes the following steps. First, measure an on-load voltage value of the battery unit and a load current value of a load. Next, calculate an instant resistance value of the battery unit according to a no-load voltage value of the battery unit, the on-load voltage value and the load current value. Finally, obtain an operating state of the battery unit according to the instant resistance and a relationship between the internal resistance and discharging time. By the method of the present invention, the user can monitor the remaining energy of the battery module accurately in real time and therefore prevent the electrical hazard caused by over-discharging the battery module. |
| US08742760B2 |
Transmit coil arrangement for a magnetic resonance device and magnetic resonance device
A transmit coil arrangement for a magnetic resonance device includes a plurality of individually actuatable conductor loops following one after another in a peripheral direction and a longitudinal direction on a cylinder surface. At least two groups, at a distance from one another in the peripheral direction, of at least two conductor loops following one after the other in the longitudinal direction are provided in the peripheral direction. To decouple the at least two groups, each of the at least two groups is bounded at least in the peripheral direction by at least one screen surface extending essentially in a radial direction and the longitudinal direction. |
| US08742755B2 |
Positive magnetic resonance imaging contrast methods and apparatus using chemical exchange saturation transfer
In one aspect, an apparatus for performing chemical exchange saturation transfer (CEST) magnetic resonance imaging on a region of an object being imaged is provided. The method comprises at least one coil capable of being operated to emit radio frequency (RF) signals, at least one detector capable of detecting nuclear magnetic resonance signals, and at least one controller to operate the at least one coil to provide at least one inversion sequence to the region to flip at least some spins in the region by a desired flip-angle, operate the at least one coil to provide at least one first pulse sequence at a first frequency offset from a peak resonant frequency of water by a first amount in a first direction to magnetize at least one exchange group in the region, operate the at least one coil to provide at least one second pulse sequence at a second frequency offset from the peak resonant frequency of water by the first amount in a second direction opposite the first direction, operate the at least one detector to measure a first signal emitted from the region as a result of providing the at least one first pulse sequence after a predetermined time interval after applying the first inversion sequence, and operate the at least one detector to measure a second signal emitted from the region as a result of providing the at least one second sequence at the predetermined time interval after applying the at least one inversion sequence, wherein the predetermined time interval is selected such that positive contrast is achieved with respect to the first signal relative to the second signal. |
| US08742754B2 |
Method and system for diffusion tensor imaging
Methods and systems for displaying microstructural integrity and/or connectivity of a region of interest (ROI) in a patient are disclosed. Methods and systems for tissue segmentation and atlas-based tissue segmentation in ROI of a patient using diffusion MRI data are also described. A method for studying microstructural integrity and/or connectivity of a region of interest (ROI) in a patient includes acquiring, via an imaging system, diffusion magnetic resonance (MRI) data in the ROI by using an Icosahedral Diffusion Tensor Encoding Scheme (IDTES); computing, via the imaging system, mean diffusivity (MD) and fractional anisotropy (FA) by using logarithm-moment algorithm (LMA); and displaying, on a display, the microstructural integrity and/or connectivity of ROI based on the computed MD and FA. The diffusion MRI data includes diffusion-weighted imaging (DWI) data or diffusion tensor imaging (DTI) data. In some cases, displaying the microstructural integrity and/or connectivity of ROI takes place in real time. |
| US08742752B2 |
Nondestructive inspection method for a heat exchanger employing adaptive noise thresholding
A method of eddy current testing for flaws in a tube is provided that includes passing an eddy current probe through the tube and obtaining eddy current data for a number of positions along the tube, analyzing the eddy current data to generate background noise data for a number of positions along the tube, analyzing the eddy current data to generate extracted data for a number of positions along the tube, and determining whether a flaw of a particular category is present in the tube based on a set of one or more of rules applied to at least a portion of the extracted data, wherein at least one of the rules uses a particular part of the extracted data and employs a threshold that is a function a particular part of the background noise data that is associated with the particular part of the extracted data. |
| US08742750B2 |
Speed sensor pick-up for fluid device
A speed pick-up ring includes a main body having a plurality of targets and defining a plurality of notches. Each notch is disposed between adjacent targets. Each notch includes a base wall, a first sidewall and an oppositely disposed second sidewall. The base wall includes a convex portion. A fluid device includes a housing and a variable reluctance speed sensor engaged to the housing. The fluid device further includes a speed pick-up ring disposed within the housing. The speed pick-up ring includes a main body having a plurality of targets and defining a plurality of notches. Each notch is disposed between adjacent targets. Each notch includes a base wall, a first sidewall that is generally concave and an oppositely disposed second sidewall that is generally concave. The base wall includes a convex portion. |
| US08742749B2 |
Test and measurement instrument including asynchronous time-interleaved digitizer using harmonic mixing
A test and measurement instrument including a splitter configured to split an input signal having a particular bandwidth into a plurality of split signals, each split signal including substantially the entire bandwidth of the input signal; a plurality of harmonic mixers, each harmonic mixer configured to mix an associated split signal of the plurality of split signals with an associated harmonic signal to generate an associated mixed signal; and a plurality of digitizers, each digitizer configured to digitize a mixed signal of an associated harmonic mixer of the plurality of harmonic mixers. A first-order harmonic of at least one harmonic signal associated with the harmonic mixers is different from an effective sample rate of at least one of the digitizers. |
| US08742747B2 |
Detector for detecting a current carrying conductor
A locator for determining the location and/or orientation of a concealed conductor, comprising a reference field detector operable to detect an alternating magnetic field along a reference axis; a first field detector operable to detect an alternating magnetic field along a first axis; and a processor operable to calculate an in-phase component of a signal detected by the first field detector, the in-phase component being in phase with a signal detected at the reference field detector and to calculate a signal indicative of a position of the concealed conductor relative to the locator using at least the in-phase component. |
| US08742746B1 |
Ultra low-noise true sub-volt band gap
A method and device are disclosed for providing an ultra low-noise hand gap voltage reference. The method detects a first voltage drop across a first diode reference, and a second voltage drop across a second voltage reference that includes a second diode. The first and second voltage drops are compared. Temperature compensation currents are supplied to the first diode reference and second voltage references in addition to constant currents, where the constant currents have the same value across a first temperature range. As a result of the constant current, a minimal amount of temperature compensation current is required. Alternatively stated, temperature compensation current is provided having a rate of change greater than PTAT. In response to comparing the first voltage drop to the second voltage drop, a true sub-volt hand gap voltage is supplied across a third voltage reference including a diode, that is constant across the first temperature range. |
| US08742743B2 |
Switching control circuit
A switching-control circuit to control a switching operation of a transistor, having an input electrode applied with the input voltage and an output electrode connected to a load via an inductor, to generate an output voltage of a target level from an input voltage, includes: a voltage-generating circuit to generate a slope voltage based on the output voltage in each of a switching period of the transistor, the slope voltage changing with a slope corresponding to the output voltage; an adding circuit to add the slope voltage to a reference voltage, indicating a reference of the output voltage of the target level, or a feedback voltage corresponding to the output voltage; and a drive circuit to perform the switching operation of the transistor, when a level of either one voltage, added with the slope voltage, of the reference and feedback voltages reaches a level of an other voltage thereof. |
| US08742740B2 |
Digital peak input voltage detector for a power converter controller
An example integrated circuit controller for a power converter includes a digital peak detector and a switching block. The digital peak detector is coupled to output a digital count signal representative of a peak input voltage of the power converter. The switching block is coupled to control switching of a power switch of the power converter to regulate an output of the power converter. The switching block is further coupled to control the switching of the power switch in response to the digital count signal. |
| US08742738B2 |
Voltage regulator system and method for efficiency optimization using duty cycle measurements
A method and system control the adding or dropping of phases in a multiphase voltage regulator. The regulator has an efficiency and this efficiency of the regulator is calculated for a given number of phases being activated from an output voltage, input voltage, output current, and duty cycle of the regulator. The efficiency of the regulator is also calculated if a phase is added using the derivative of the duty cycle as a function of the output current. The efficiency of the regulator is further calculated if a phase is dropped using the derivative of the duty cycle as a function of the output current. From these operations of calculating, a phase is either added, dropped, or the phase is maintained at its current value to thereby optimize the efficiency of the regulator. |
| US08742737B2 |
Switched-mode power supply controlling circuit and switched-mode power supply using the same
A controlling circuit is provided for controlling an output voltage of a main circuit of a switched-mode power supply. The controlling circuit includes components that generate a switching status selecting signal reflecting a voltage change of the main circuit, and output a reference voltage according to a voltage output status selected according to the switching status selecting signal. Other components output a pulse width modulation controlling signal according to the reference voltage and a current signal reflecting a current change of the main circuit, and output a pulse frequency modulation controlling signal with a frequency according to a frequency output status selected according to the switching status selecting signal. Yet other components output a switching controlling signal according to the controlling signals, and control a switch of the main circuit to switch-on or switch off according to the switching controlling signal to stabilize the output voltage of the main circuit. |
| US08742736B2 |
System and method for biasing analog circuitry in a distributed power delivery network for image sensors and other circuit structures
A distributed power supply delivery network includes an analog biased circuit array having current sources for delivering current to adjacent circuits, and a resistive ladder of resistor elements, where each resistor element is disposed between adjacent current sources. A tuned IR voltage drop network is included to match voltage drops across the resistive ladder. The tuned IR voltage drop network includes series connected resistors and a static current draw to induce the IR drop. The resistors may be matched with respect to the distributed power supply delivery system. The current source providing the static current for the IR drop may be programmed based on the power supply delivery load, in order to adjust the voltage drop across the biasing delivery route and match the voltage drop in the referenced power supply. |
| US08742732B2 |
Control method for doubly-fed electric generator
Exemplary embodiments provide a method of controlling a doubly-fed electric generator using a frequency converter having a torque and flux controller. The frequency converter is connected to a rotor of the generator. The frequency converter calculates a stator flux positive sequence component from a stator flux. A rotor flux amplitude reference and an estimated torque is then calculated by using the stator flux positive sequence component. The frequency converter selects a voltage vector to steer the rotor flux by using the rotor flux amplitude reference and the estimated torque. |
| US08742731B2 |
Voltage conversion circuit and charging device employing the same
A voltage conversion circuit for a charging device includes a voltage-stabilizing circuit and a switching circuit. The voltage-stabilizing circuit includes a voltage stabilizer circuit and a feedback resistor, the voltage stabilizer circuit comprises an input pin, an output pin, and a feedback pin. The switching circuit includes a switch and at least two divider resistors, the switch comprises at least two data input terminals, a data output terminal, and two control terminals. The input pin is connected to a power source, and the feedback resistor is connected between the feedback pin and ground. The data input terminals are respectively connected to the output pin through one of the divider resistors, the data output terminal is connected between the feedback pin and the feedback resistor, the two control terminals are capable of receiving control signals to control the data output terminal to selectively connect to one of the data input terminals. |
| US08742730B2 |
Charging circuit
A charging circuit that prevents a system abnormality caused by removal of a battery. The charging circuit includes a constant voltage charge controller which detects charge voltage and performs a constant voltage charging operation. A constant current charge controller detects charge current and performs a constant current charging operation. A controller controls the constant voltage charge controller to perform the constant voltage charging operation during a period from when the charge voltage reaches a fully charged voltage to when the charge current decreases to a charge completion current. The controller suspends charging the battery when the constant voltage charging operation is being performed and detects whether or not the battery is coupled to the charging circuit based on the charge voltage during the charging suspension. |
| US08742727B2 |
Apparatus and method for estimating voltage of secondary battery including blended cathode material
Disclosed is an apparatus for estimating a voltage of a secondary battery which includes a cathode comprising a first cathode material and a second cathode material with different operating voltage ranges, an anode comprising an anode material and a separator for separating the cathode from the anode. The apparatus comprises a control unit configured to estimate a voltage of a secondary battery based on a circuit model including a first cathode material circuit, a second cathode material circuit and an anode material circuit, each circuit modeled to change its voltage according to State Of Charge (SOC) of the electrode material corresponding the circuit and a current flowing through the circuit. |
| US08742726B2 |
System and method for idle charge of hybrid vehicle
A method for idle charging of a hybrid vehicle according to an exemplary embodiment of the present invention may include: detecting an SOC of a battery and entering times to an idle charge control state; changing an entering point and a releasing point of the idle charge control according to a number of entering times to the idle charge control state for a predetermined period; performing idle charging by forcibly starting an engine when the SOC of the battery reaches the entering point of the idle charge control; and stopping the engine when the SOC of the battery reaches the releasing point of the idle charge control state as the idle charge is performed. |
| US08742725B2 |
Secondary battery system
Provided is a secondary battery system which can accurately detect a state of a secondary battery system (such as a secondary battery state and a secondary battery system failure). The secondary battery system (6) includes dV/dQ calculation means which calculates a dV/dQ value as a ratio of a change amount dV of a battery voltage V of a secondary battery (100) against a change amount dQ of an accumulation amount Q when the accumulation amount Q of the secondary battery (100) is changed. The secondary battery system (6) detects the state of the secondary battery system (6) by using the dV/dQ value. |
| US08742724B2 |
Battery pack for power tool, and power tool
A battery pack for power tool includes a battery, a monitoring circuit, and a sleep mode switching unit. The battery includes at least one battery cell. The monitoring circuit is operated by receiving power supply from the battery. The sleep mode switching unit switches the battery pack to a sleep mode by stopping at least a part or all of operations of the monitoring circuit when the monitoring circuit detects a discharge end state where a discharge current from the battery is equal to or lower than a predetermined set current value, and the monitoring circuit further detects at least one of a voltage stable state where a voltage change amount in the battery cell is within a predetermined stable range of voltage change amount and a temperature stable state where a temperature change amount in the battery is within a predetermined stable range of temperature change amount. |
| US08742723B2 |
Battery pack assembled with recycled batteries and method of assembly
Provided is a battery pack producing method and a battery pack capable of suppressing defects such as overcharging or overdischarging in one or more of the used secondary batteries constituting a battery pack, and sufficiently exhibiting the performance of the used secondary batteries of the battery pack. This method includes an obtaining process for obtaining each full charge capacity of the used secondary batteries, a selecting process for selecting one or more used secondary batteries having similar full charge capacities from the used secondary batteries whose full charge capacities have been obtained, and an assembling process for assembling the selected secondary batteries. |
| US08742720B2 |
Charging station
A lockable charging station for charging rechargeable electric devices comprising a base to encapsulate the electrical charging station and a plurality of locking cover members, wherein each locking cover member is removably mechanically engageable with the base via tab and slot engagement and is individually lockable to the base using a lock. Each locking cover member secures an individual electric device to the base so that the electric device is held in electrical engagement with the charging station until the individual user removes the locking cover. The lockable charging station may include a multi-unit charger with an encapsulating base and plurality of locking cover members or a base with mounting points for individual chargers and a plurality of locking covers. |
| US08742718B2 |
Charging apparatus for vehicle
A vehicle is equipped with a main battery, an auxiliary machinery battery, a high-capacitance DC/DC converter which converts power on an electric path between the main battery and a motor-generator for traveling to supply the converted power to the auxiliary machinery battery, a low-capacitance sub power supply which converts power on an electric path between the main battery and an external power supply to supply the converted power to the auxiliary machinery battery, and a control device which controls the sub power supply. The control device determines whether or not the DC/DC converter has an abnormality, and operates the sub power supply to perform precharging when it is determined that the DC/DC converter is abnormal. An auxiliary machinery battery voltage V2 when precharging has been performed is set to a value which is higher by a predetermined voltage a than an auxiliary machinery battery voltage V1 when precharging has not been performed. |
| US08742712B2 |
Methods, systems and apparatus for controlling third harmonic voltage when operating a multi-phase machine in an overmodulation region
Methods, system and apparatus are provided for controlling third harmonic voltages when operating a multi-phase machine in an overmodulation region. The multi-phase machine can be, for example, a five-phase machine in a vector controlled motor drive system that includes a five-phase PWM controlled inverter module that drives the five-phase machine. Techniques for overmodulating a reference voltage vector are provided. For example, when the reference voltage vector is determined to be within the overmodulation region, an angle of the reference voltage vector can be modified to generate a reference voltage overmodulation control angle, and a magnitude of the reference voltage vector can be modified, based on the reference voltage overmodulation control angle, to generate a modified magnitude of the reference voltage vector. By modifying the reference voltage vector, voltage command signals that control a five-phase inverter module can be optimized to increase output voltages generated by the five-phase inverter module. |
| US08742706B2 |
Electronically commutated electric motor having emergency running properties
The invention relates to an electronically commutated electric motor. The electric motor comprises a stator, and a rotor, in particular a permanent-magnetic rotor. The electric motor further comprises a control unit connected to the stator. The control unit is designed to actuate the stator such that the stator can generate a magnetic rotating field for rotationally moving the rotor. According to the invention, the control unit of the electric motor is provided with a power output stage having semiconductor switches. Subject to the low-resistance, or short-circuited, semiconductor switch of the power output stage, in particular as a result of defect, the control unit is designed to actuate the stator for generating the rotating field such that during a complete rotor revolution, the rotor can provide a mechanical output, or in the operational mode, a braking torque of the electric motor caused by the defect is reduced, or completely neutralized, by the low-resistance, or short-circuited, semiconductor switch. |
| US08742703B2 |
Blower apparatus having an electric drive motor
The invention relates to a blower apparatus (1) having a blower wheel (4) for generating a blower air flow (50). The blower wheel (4) is arranged in a housing (2), wherein the blower wheel is driven by an electric drive motor (8). A blower tube (6) via which the generated blower air flow (50) is guided connects at an outlet (5). A control unit (17) is provided for controlling the rotational speed of the electric drive motor. For a quick reduction of the blower air flow (50), it is provided that the control unit (17) supports the deceleration of the drive motor (8) through a braking current (I). |
| US08742698B2 |
Light emitting diode (LED) light source control system for intelligentized layer breeding
A Light Emitting Diode (LED) light source control system for intelligentized layer breeding, comprises a plurality of LED lamps (30) equipped at a layer breeding place and a LED light source controller (10). Each of the LED lamps (30) comprises a red light LED and a green light LED. The LED light source controller (10) controls the LED lamps (30) to emit green light during the brooding period and the improved period of a layer; and the LED light source controller (10) controls the LED lamps (30) to emit red light during the egg producing period of a layer. The LED light source controller (10) controls the illumination intensity of the LED lamps (30) by regulating the duty ratio of an output Pulse-Width Modulation (PWM). The LED light source controller (10) controls the illumination time of the LED lamps (30) by utilizing a clock unit so as to implement different illumination time respectively during various stages of the brooding period, the improved period and the egg producing period of a layer. The system can improve the production performance of the layer effectively, realize the purpose of increasing production and emission reduction, and decrease the mortality of the layer. |
| US08742696B2 |
Illuminating apparatus and method thereof
An illuminating apparatus adapted to receive an input power which is a pulse DC includes a lighting unit, a detecting unit and a controlling unit. The lighting unit includes a plurality of lighting sets and a switching unit. The switching unit may be used to cause the lighting sets interconnected in a serial fashion and/or in a parallel manner. The detecting unit detects a state of the input power. The control unit couples the detecting unit and the lighting unit, and controls the switching unit according to the detecting unit detecting the state of the input power. As such, the turn-on voltages of the lighting unit may adjust at different stages of the input power. |
| US08742692B2 |
LED driving circuit and short-circuit protection circuit
An LED driving circuit, adapted to drive an LED module, is disclosed. The LED driving circuit comprises a converting circuit, a converting controller, and a short-circuit protection circuit. The converting circuit, having a capacitor coupled to the LED module, is coupled to an input power source to proceed converting operation to supply an output current for driving the LED module. The converting controller controls the converting circuit to provide a stable current flowing through the LED module. The short-circuit protection circuit is coupled to the LED module in series and cuts the current flowing through the LED module off when detecting that the current higher than a current protection value. |
| US08742686B2 |
Systems and methods for providing an OEM level networked lighting system
The present application is generally directed to systems and methods for control and management of lighting components connected in a network. A user specified rule is executed to control lighting effects in a lighting network which comprises an interface module in communication with one or more lighting control modules. The interface module may receive a rule for controlling a lighting network. The rule may comprise a user identified input and a user specified lighting effect to occur responsive to the user identified input. The interface module detects receipt of the user identified input and executes the rule to trigger the user specified lighting effect via the one or more lighting control modules. |
| US08742685B1 |
Magnetic amplifier assisted LED constant current sink overhead voltage regulation
A power circuit include a plurality of LED strings, each LED string having multiple LEDs connected in series. A plurality of magnetic amplifiers, reset current sources, and a control circuit are used to drive each LED string with equal current and to independently regulate the amount of voltage supplied to each LED to maximize efficiency. One magnetic amplifier, one reset current source, and one current sink are dedicated to each LED string. The control circuit measures the voltage drop across each LED string and determines an amount of reset control current in response to the measured voltage drop. The reset control current is supplied by the reset current source to the magnetic amplifier dedicated to the regulated LED string. The amount of reset control current supplied to the magnetic amplifier dictates the amount of voltage supplied to the LED string. |
| US08742684B2 |
LED lighting system with accurate current control
A light emitting diode (LED) lighting system and method are disclosed. The LED lighting system and method include an LED controller to accurately control a current in an LED system. The LED controller includes components to calculate, based on the current and an active time period of an LED current time period, an actual charge amount delivered to the LED system wherein the LED current time period is duty cycle modulated at a rate of greater than fifty (50) Hz and to utilize the actual charge amount to modify and provide a desired target charge amount to be delivered during a future active time period of the LED current time period. The LED system and method further involve components to compare the actual charge amount to a desired charge amount for the active time period and compensate for a difference between the actual charge amount and the desired charge amount during the future active time period. |
| US08742679B2 |
Apparatus and system for providing power to solid state lighting
An apparatus and computer readable storage medium are disclosed for supplying power to a load such as a plurality of light emitting diodes. A representative apparatus comprises a primary module, a first secondary module couplable to a first load, and a second secondary module couplable to a second load. The primary module comprises a transformer having a transformer primary. The first secondary module comprises a first transformer secondary magnetically coupled to the transformer primary, and the second secondary module comprises a second transformer secondary magnetically coupled to the transformer primary, with the second secondary module couplable through the first or second load to the first secondary module. |
| US08742678B2 |
Discharge lamp system for constant power control and controlling method of the same
A discharge lamp system includes a discharge lamp; a power supply device for providing DC input voltage and current; a converter connected to the discharge lamp and the power supply device for providing power for the discharge lamp; a DC input voltage detecting unit connected to the power supply device for detecting the DC input voltage; a DC input current detecting unit connected to the power supply device for detecting the DC input current; a lamp state detecting unit for detecting a signal responsive to the lamp state; a controller connected to the converter, the DC input voltage detecting unit, the DC input current detecting unit and the lamp state detecting unit for controlling the discharge lamp according to the signal responsive to the lamp state, the DC input voltage and the DC input current. A controlling method for the discharge lamp system is also disclosed herein. |
| US08742676B2 |
Drive circuit for light emitting diode array based on sepic or cuk topology
Features of the invention are related to drive circuits that provide both power factor correction and voltage conversion in a single circuit and in some instances drive an LED array. This single stage converter uses a SEPIC or Cuk topology and can operate LED arrays that have DC voltages above or below the AC line voltage. An output side filter and bulk energy storage device is placed at the output of the circuit. Bulk energy storage can be provided by an inductor, a capacitor, or a combination of an inductor and a capacitor. The output side filtering can be provided by a capacitor or a capacitor and an inductor. The circuit also includes a switch and a switch control device for controlling the switch to provide power factor correction. |
| US08742674B2 |
Adaptive current regulation for solid state lighting
Exemplary embodiments provide an apparatus, system and method for power conversion to provide power to solid state lighting, and which may be coupled to a first switch, such as a dimmer switch. An exemplary system comprises: a switching power supply; solid state lighting; a first adaptive interface circuit to provide a resistive impedance to the first switch and conduct current from the first switch in a default mode; and a second adaptive interface circuit to create a resonant process. An exemplary apparatus comprises: a switching power supply; and an adaptive interface circuit comprising a resistive impedance coupled in series to a reactive impedance to conduct current from the first switch in a first current path in a default mode, and further comprising a second switch coupled to the reactive impedance to conduct current from the first switch in a second current path, with the adaptive interface circuit further damping oscillation when the first switch turns on. |
| US08742672B2 |
Light source dimming control circuit
The present invention provides a light source dimming control circuit, which includes a voltage signal generator for generating a first voltage signal between a predetermined voltage level and a ground level; a reference voltage signal generator for generating a reference voltage signal at an output end according to the first voltage signal and a second voltage signal; a first switch with a first end coupled to an output end of alight source; a first resistor with a first end coupled to a second end of the first switch, and a second end coupled to a ground end; a switch controller coupled to the first switch and the voltage signal generator for controlling on/off states of the first switch according to a sawtooth signal and the first voltage signal; and a current controller for controlling current flowing through the first resistor according to the reference voltage signal. |
| US08742669B2 |
Passive power distribution for multiple electrode inductive plasma source
Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma. |
| US08742667B2 |
Method and system for increasing the lifespan of a plasma
A method and a system for increasing the lifespan of a plasma obtained in the atmosphere. The method includes the following steps: emitting a femtosecond laser pulse, referred to as a first pulse, generating a column of plasma by the filamentation phenomenon, and emitting a second YAG laser pulse, focused by way of an axicon on a line in the plasma column, the energy of the photons of the second laser pulse being greater than the attachment energy of the electrons in the plasma to neutral molecules such as oxygen molecules. The duration of the second pulse is greater than the duration of the first pulse, and the delay between the two pulses is greater than one microsecond. |
| US08742665B2 |
Plasma source design
Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region. |
| US08742664B2 |
Apparatus and method for controlling room lamp of vehicle
Disclosed are an apparatus and a method for controlling a room lamp of a vehicle. The present invention relates to collecting information associated with the vehicle and information associated with an ambient environment using a global positioning system (GPS) or a controller area network (CAN) and then controlling the room lamp using at least one of turn-off of the room lamp, change of an irradiation angle of the room lamp, and adjustment of illumination of the room lamp based on the collected information. |
| US08742663B2 |
Transformer and lamp base element, lamp base, and discharge lamp having such a lamp base
In various embodiments, a lamp base element for holding a transformer is provided. The lamp base element may include a transformer chamber which holds the transformer, wherein the transformer is held completely in the transformer chamber, and wherein the contact pins of the transformer are passed through a contact-making face of the transformer chamber, which contact-making face is opposite an opening face. |
| US08742659B2 |
Display pixel and display device including the same
A display pixel includes: a first stack including a transparent anode layer having first and second anode elements, a cathode layer, and a functional layer disposed between the anode layer and the cathode layer; a second stack disposed on the first stack and including an insulating layer and a conductive column line disposed on a surface of the insulating layer; a conductive bridging line disposed in the first stack and connected to the first and second anode elements; and an upper via unit including an upper contact via extending from the conductive column line into the first stack and connected to the bridging line or one of the first and second anode elements. |
| US08742658B2 |
Full-color active matrix organic light emitting display with hybrid
A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band. |
| US08742657B2 |
Triplet-Triplet annihilation up conversion (TTA-UC) for display and lighting applications
Novel devices comprising a layer including compounds that are capable of triplet triplet annihilation up conversion (TTA-UC). In particular, the up-conversion layer absorbs light emitted by the OLED device and emits up-converted light with shorter wavelength in response. These devices may be used to provide improved lifetime for blue emitting devices. |
| US08742653B2 |
Spark plug and metal shell for spark plug
An adhesion of a nickel plating layer to a metal shell is improved, and an effect of improving a corrosion resistance by providing the nickel plating layer is sufficiently exerted. A spark plug 1 includes a cylindrical metal shell 3 that extends in an axial CL1 direction, and a nickel plating layer 31 that is made of metal containing nickel as a main component and covers an outer surface of the metal shell. In a monochrome image of 256 gradations where black is 0 and white is 255, which is obtained by observing a cross-section perpendicular to an outer surface of the nickel plating layer by a transmission electron microscope with an acceleration voltage of 200 kV, an average value in 256 gradations of the monochrome image is 170 or larger and 230 or smaller. |
| US08742651B2 |
Piezoelectric vibrating pieces and piezoelectric devices comprising same, and methods for manufacturing same
Exemplary piezoelectric vibrating pieces have an excitation electrode and an extraction electrode having uniform thickness in the vibrating region to prevent unnecessary vibrations and degradation of vibration characteristics. An exemplary piezoelectric vibrating piece includes a vibrating portion having an excitation electrode of a first thickness (d1), an outer frame surrounding the vibrating portion with a gap therebetween, a joining portion connecting the vibrating portion and the outer frame, and an extraction electrode connected to the excitation electrode and extending on the vibrating portion, joining portion, and outer frame. The extraction electrode has the first thickness d1 throughout the vibrating portion and a second thickness (d2>d1) on the outer frame. |
| US08742648B2 |
Method and apparatus for harvesting energy based on the random occurrence of common direction molecules
An energy collecting device is disclosed. For example, the energy collecting device comprises a plate layer having a plurality of perforations for receiving a plurality of molecules, a molecular energy collecting layer, coupled to the plate layer, having an impacting structure for receiving the plurality of molecules, and a substrate layer, coupled to the molecular energy collecting layer, having a conductor wire coil for collecting electrons that are generated when the plurality of molecules impacts the impacting structure. |
| US08742645B2 |
Surface acoustic wave sensor system
A surface acoustic wave sensor system includes a base substrate, a piezoelectric substrate disposed on the base substrate, inter-digital transducer (IDT) electrodes disposed along a longitudinal direction on the piezoelectric substrate, each IDT electrode including an input inter-digital transducer and an output inter-digital transducer paired with and facing the input inter-digital transducer, each pair of input and output IDTs forming a surface acoustic wave unit sensor with the piezoelectric substrate, and connection electrodes disposed in the base substrate and electrically connected to the surface acoustic wave unit sensors. |
| US08742644B2 |
Power generation apparatus
A power generation apparatus includes a dielectric, a movable member being opposed to the dielectric with a predetermined distance, and an electret and an opposing electrode that are formed on the surface of the movable member facing the dielectric so as to generate a fringe electric field penetrating the dielectric between the two electrodes. When the volume occupancy of the dielectric between the electret and the opposing electrode varies in accordance with a displacement of the movable member, the power generation apparatus outputs the electric charge induced in the opposing electrode as electric current. |
| US08742638B1 |
Hydrodynamic bearing assembly and spindle motor having the same
There is provided a hydrodynamic bearing assembly including a sleeve; and a shaft rotatably inserted into a shaft hole and constituting a bearing clearance, wherein at least one of an inner circumferential surface of the sleeve and an outer circumferential surface of the shaft includes upper and lower radial dynamic pressure grooves having a herringbone pattern, and conditional expressions a+b>c+d and b−a>c−d>0 are satisfied. |
| US08742634B2 |
Linear vibration motor
Disclosed herein is a linear vibration motor including: a stator part including a magnetic force part and a casing receiving the magnetic force part therein; and a vibrator part including a coil facing the magnetic force part to thereby generate electromagnetic force and a printed circuit board having one end coupled to the stator part and the other end coupled to the coil, wherein the vibrator part moves linearly along a longitudinal outer peripheral surface of the casing receiving the magnetic force part therein. |
| US08742632B1 |
Linear motor with two magnets and a coil carrier having multiple winding areas with each area having a section of a coil wound with one continuous wire, or separate coils respectively wound around each area with all coils wound in the same direction
A linear motor includes an assembly of two magnets separated by a non-magnetic spacer wherein the assembly is coaxially affixed inside of a housing, which results in an air gap therebetween. The magnets are positioned to have a same direction of magnetization. A first embodiment of the motor includes a coil carrier having a single electrical coil of two sections wound in the same direction and positioned into the corresponding two winding areas of the carrier. The coil carrier is movably positioned into the air gap and further to surround the assembly, thereby moving along an axial direction of the motor. A second embodiment includes two coils that wound in a same direction with the respective separated wires and positioned into the respective two winding areas of the coil carrier. |
| US08742631B2 |
Power module and power supply system
A power module includes a power conversion circuit, a fan, a controlling unit, a capacitor, a current-adjusting element and a soft start controlling unit. The power conversion circuit is used for outputting a DC voltage. The fan is connected with the power conversion circuit. The controlling unit is used for issuing a control signal to the fan, thereby controlling operation of the fan. The capacitor is connected with the fan in parallel. The current-adjusting element is connected with the capacitor in series for adjusting the magnitude of current flowing through the capacitor. The soft start controlling unit is connected with the current-adjusting element. When the power module is connected with a connector of a power supply system, the soft start controlling unit controls the magnitude of current flowing through the current-adjusting element to be gradually increased, so that the magnitude of current flowing through the capacitor is gradually increased. |
| US08742630B2 |
One wire self referencing circuits for providing power and data
A one wire self referencing circuit provides power or data at relatively low power and relatively high frequency. |
| US08742626B2 |
Wireless power transmission system
A wireless power transmission system is designed to transmit power between a power-transmitting resonator 105 and a power-receiving resonator 107, which are implemented as inductors LL and Ls of mutually different sizes, by a non-contact method over a resonant magnetic field with a resonant frequency f0. When measured at the resonant frequency f0, the resistance value Rs per unit length of at least a part of wiring that forms the smaller inductor Ls is lower than that (RL) of wiring that forms the other larger inductor LL. In this manner, high transmission efficiency can be maintained between those power-transmitting and power-receiving resonators without increasing the overall length of wiring used wastefully. |
| US08742620B1 |
Electrical cogeneration system and method
An electrical cogeneration system and AC coupling method for efficiently distributing power from multiple AC sources. The system includes a main AC source, an AC generator, a solar panel, and an automatic transfer switch. The main AC source and the AC generator are connected to the transfer switch. The system also includes a DC/AC inverter, which is in communication with the solar panel. The transfer switch and the inverter are both connected to a common AC load panel where the power provided by the solar panel, the AC generator, and the main AC source is used to satisfy a common electrical load. The system further includes a system control device that is in communication with the inverter and the transfer switch and is capable of selectively determining power input to the AC load panel. An AC coupling method for distributing power from multiple AC sources is also provided. |
| US08742618B2 |
Method for designing power distribution network of circuit system and related circuit system
A method for designing a power distribution network of a circuit system includes the following steps: determining positions of a plurality of power source nodes; estimating a current distribution condition of the circuit system; and creating a first part of the power distribution network according to at least the positions of the power source nodes. |
| US08742611B2 |
Hydropower generating system
A hydropower generating system includes a pump, a container data center, and a hydropower generating module. The container data center includes a number of cooling pipes. Each of the cooling pipes includes a water intake and a water outlet. The water outlet is connected to the pump. The pump is for pumping water from a source to the cooling pipes. The water flows along the pipes to dissipate the heat generated by the container data center. The hydropower generating module includes a turbine and a generator. The turbine is arranged under the water outlet. The hydropower generating module is electrically connected to the pump. The water flowing out from the water outlets is able to turn the turbine, causing the turbine to drive the generator to generate electrical power, the generated electrical power is supplied to the pump. |
| US08742609B2 |
Power management during grid faults
A method for operating a wind turbine facility during for example a grid fault, the wind turbine facility comprising a power dissipation/storage being adapted to dissipate or store electrical energy exceeding an amount to be delivered to an associated power supply grid during the grid fault. The method includes operating the wind turbine facility in accordance with an allowed amount of electrical energy that can be dissipated or stored in the power dissipation/storage of the wind turbine facility by ensuring that a total amount of electrical energy generated by the wind turbine facility does not exceed a sum of the allowed amount and the amount to be delivered to the power supply grid. |
| US08742608B2 |
Drive system for use with flowing fluids
The present invention includes a drive system for use in a flowing fluid, the drive system preferably having a first turbine connected to a shaft, a first gear connected to the shaft, a second turbine rotatably mounted on a pipe, a second gear rotatably mounted on the pipe and connected to the second turbine, and two or more satellite gears in fixed locations relative to the pipe and rotatably engaged, directly or indirectly, with the first gear and the second gear. The drive system may be used, for example, in a wind generator to generate electrical energy. |
| US08742606B2 |
Power converting device for hybrid
The present disclosure prevents an inrush current generated when one side is completely discharged, or charged voltages are different from one another because a DC link capacitor and an ultra-capacitor are directly connected to each other, by driving a load motor after completing initial charging by making each voltage the same through the performing of switching between a DC link capacitor and an ultra-capacitor during initial ignition, so as to safely perform initializing regardless of the charged-discharged state of an electricity storage device during initial ignition. |
| US08742599B2 |
Identification mechanism for semiconductor device die
A method and system for uniquely identifying each semiconductor device die from a wafer is provided. Identifying features are associated with device die bond pads. In one embodiment, one or more tab features are patterned and associated with each of one or more device die bond pads. These features can represent a code (e.g., binary or ternary) that uniquely identifies each device die on the wafer. Each tab feature can be the same shape or different shapes, depending upon the nature of coding desired. Alternatively, portions of the one or more device die bond pads can be omitted as a mechanism for providing coded information, rather than adding portions to the device die bond pads. |
| US08742592B2 |
Semiconductor device including a plug and method for manufacturing the same
According to one embodiment, a method for manufacturing a semiconductor device includes: forming a silicon oxide film on a semiconductor substrate; forming a via in the silicon oxide film; forming a contact layer inside the via; forming a silicon layer on the contact layer; and forming a tungsten film embedded in the via by making a tungsten-containing gas react with the silicon layer. |
| US08742591B2 |
Semiconductor device and method of forming insulating layer in notches around conductive TSV for stress relief
A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A notch is formed in the semiconductor wafer around each of the conductive vias. The notch around the conductive vias can be formed by wet etching, dry etching, or LDA. A first insulating layer is formed over a surface of the semiconductor wafer and conductive vias and into the notch to provide stress relief between the conductive vias and semiconductor wafer. A portion of the first insulating layer is removed to expose the conductive vias. A first conductive layer and second insulating layer can be formed around the conductive vias. A second conductive layer can be formed over the conductive vias. The notch can extend into the second insulating layer. |
| US08742590B2 |
Method for forming isolation trenches
A method is provided for forming at least one TSV interconnect structure surrounded by at least one isolating trench-like structure having at least one airgap. The method comprises at least the steps of providing a substrate having a first main surface and producing simultaneous at least one a TSV hole and a trench-like structure surrounding the TSV hole and separated by remaining substrate material. The method also comprises thereafter depositing a dielectric liner in order to smoothen the sidewalls of the etched TSV hole and to pinch-off the opening of the trench-like structure at the first main surface of the substrate in order to create at least one airgap in said trench-like structure and depositing a conductive material in said TSV hole in order to create a TSV interconnect. A corresponding substrate is also provided. |
| US08742587B1 |
Metal interconnection structure
A metal interconnection structure includes a substrate and a protective layer. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN). |
| US08742584B2 |
Semiconductor device
An externally connecting electrode is formed above a semiconductor substrate with interlayer insulation films and disposed in the externally connecting electrode. The externally connecting electrode has a pad metal layer whose upper surface is exposed, a first metal layer formed between the pad metal layer and the semiconductor substrate, and at least two first vias which penetrate the interlayer insulation film and electrically connect the pad metal layer to the first metal layer and are formed in the interlayer insulation film. The maximum interval b between the first vias is larger than the width a of the pad metal layer. |
| US08742580B2 |
Method of wire bonding over active area of a semiconductor circuit
A method and structure are provided to enable wire bond connections over active and/or passive devices and/or low-k dielectrics, formed on an Integrated Circuit die. A semiconductor substrate having active and/or passive devices is provided, with interconnect metallization formed over the active and/or passive devices. A passivation layer formed over the interconnect metallization is provided, wherein openings are formed in the passivation layer to an upper metal layer of the interconnect metallization. Compliant metal bond pads are formed over the passivation layer, wherein the compliant metal bond pads are connected through the openings to the upper metal layer, and wherein the compliant metal bond pads are formed substantially over the active and/or passive devices. The compliant metal bond pads may be formed of a composite metal structure. |
| US08742579B2 |
Semiconductor device and method of providing Z-interconnect conductive pillars with inner polymer core
A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar. |
| US08742575B2 |
Semiconductor device and fabrication method thereof
Disclosed is a semiconductor device that comprises a first insulating film provided on a main face of a semiconductor substrate; a first pedestal provided at a first wiring layer on the first insulating layer; a second insulating film provided on the first wiring layer; and a second pedestal provided at a second wiring layer on the second insulating film, wherein, when the first and second pedestals are projected in a direction perpendicular to the main face onto a plane parallel to the main face, the second pedestal is larger than the first pedestal, and the whole of the first pedestal is disposed at an inside of the second pedestal. |
| US08742574B2 |
Semiconductor device having a through-substrate via
Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a top wafer and a bottom wafer bonded together with a patterned adhesive material. The top wafer and the bottom wafer include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the top and bottom wafers. A via is formed through the top wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the top wafer and the integrated circuits formed in the bottom wafer. The via includes a conductive material that furnishes the electrical interconnection between the top and bottom wafers. |
| US08742573B2 |
Package structure and manufacturing method thereof
A package structure comprises a substrate, a plurality of first electronic components, at least a second electronic component, a first covering layer and a wiring layer. A surface of the substrate includes a first region and a second region. The first electronic components are disposed in the first region, wherein at least one of the first electronic components has a first conductive contact. The second electronic component is disposed in the second region. The first covering layer includes a recess and a first exposing region for exposing the first conductive contact. The wiring layer is formed on the recess and electronically coupled to the first conductive contact. |
| US08742571B2 |
Diode array and method for producing a diode array
A diode arrangement includes a diode and two electrodes. Each electrode is connected to the diode in an electrically conductive manner via a soldered connection on one of two oppositely arranged contact surfaces of the diode. The contact surfaces of the diode are formed substantially by the surfaces of a lower side and an upper side of the diode and are contacted with the contact extensions of the electrodes via the soldered connection. The contact extensions forming counter contact surfaces are substantially congruent with the contact surfaces of the diode. |
| US08742570B2 |
Backplate interconnect with integrated passives
This disclosure provides systems, methods and apparatus for manufacturing display devices having electronic components mounted within a display device package. In one aspect, the electronic component connects to the exterior of the display device through pads that run below a seal that holds a substrate and a backplate of the display device together. In another aspect the electronic components also connect to an electromechanical device within the display device, as well as connecting to pads that are external to the display device. |
| US08742569B2 |
Semiconductor package configured to electrically couple to a printed circuit board and method of providing same
In some examples, a semiconductor package can be configured to electrically couple to a printed circuit board. The semiconductor package can include: (a) a lid having one or more first electrically conductive leads; (b) a base coupled to the lid and having one or more second electrically conductive leads electrically coupled to the one or more first electrically conductive leads; (c) one or more first semiconductor devices mechanically coupled to the lid and electrically coupled to the one or more first electrically conductive leads; and (d) one or more first micro-electrical-mechanical system devices mechanically coupled to the lid and electrically coupled to the one or more first electrically conductive leads. At least one of the lid or the base can have at least one port hole. The one or more first electrically conductive leads can be configured to couple to the printed circuit board. Other embodiments are disclosed. |
| US08742563B2 |
Component and method for producing a component
A component and a method for producing a component are disclosed. The component comprises an integrated circuit, a housing body, a wiring device overlapping the integrated circuit and the housing body, and one or more external contact devices in communication with the wiring device. |
| US08742562B2 |
Electronic device protected against electro static discharge
An embodiment of a method for manufacturing an electronic device realized on a semiconductor substrate and protected against electro static discharge by the provision of supporting means for the electronic device to keep it far from contacts with possible sources of an ESD event during the manufacturing phases. The supporting means are associated with said electronic device in all the manufacturing stages for instance when assembling the device, when picking and placing it in trays a first time, during the burning-in testing phases, when picking and placing it in trays a second time, or when picking and placing it in a scanner. In an embodiment, the supporting means are protective notches associated with the back side of the semiconductor substrate and provided at each edge corner of the semiconductor substrate. |
| US08742559B2 |
Manufacturing method of semiconductor device, and semiconductor device
To suppress the reduction in reliability of a resin-sealed semiconductor device. A first cap (member) and a second cap (member) with a cavity (space formation portion) are superimposed and bonded together to form a sealed space. A semiconductor including a sensor chip (semiconductor chip) and wires inside the space is manufactured in the following way. In a sealing step of sealing a joint part between the caps, a sealing member is formed of resin such that an entirety of an upper surface of the second cap and an entirety of a lower surface of the first cap are respectively exposed. Thus, in the sealing step, the pressure acting in the direction of crushing the second cap can be decreased. |
| US08742558B2 |
Component protection for advanced packaging applications
A method of protecting sensitive components prior to, during or subsequent to advanced die packaging processing includes applying a metal stack layer such as titanium/copper (Ti/Cu) onto the front surface of a die assembly such that the die assembly front surface is covered with the metal stack layer. A layer of titanium/copper/titanium (Ti/Cu/Ti) or a solder alloy is also applied to the back surface of the die assembly such that the back surface of the die assembly is covered with the Ti/Cu/Ti layer or solder alloy. The front surface metal stack layer and the back surface Ti/Cu/Ti layer or solder alloy prevent degradation of die metallization prior to, during or subsequent to the advanced die packaging processing. |
| US08742557B2 |
Die mounting stress isolator
One method of the present invention includes preparing a die with traces and pads as desired for the intended use of the die. A MEMS device is mounted to the die. The die is then mounted to a substrate of the same material as the die. The substrate is then mounted to a package. The die and/or the substrate may be flip-chip mounted. |
| US08742556B2 |
Semiconductor module
A semiconductor module comprises: a metal block; a semiconductor device installed via a solder layer in a semiconductor device installation area on a surface of the metal block; and a molded portion formed by molding a resin on the metal block and the semiconductor device; wherein the surface of the metal block includes a plating area and a roughened area, and the semiconductor device installation area is provided in the plating area. |
| US08742554B2 |
Circuit member, manufacturing method for circuit members, semiconductor device, and surface lamination structure for circuit member
A circuit member includes a frame substrate formed, by patterning a rolled copper plate or a rolled copper alloy plate, with a die pad portion for a semiconductor chip to be mounted thereon, and a lead portion for an electrical connection to the semiconductor chip, having rough surfaces formed as roughed surfaces on upsides and lateral wall sides of the die pad portion and the lead portion, and smooth surfaces formed on downsides of the die pad portion and the lead portion, and the die pad portion and the lead portion are buried in a sealing resin, having a downside of the lead portion exposed. |
| US08742553B2 |
Printed wiring board
A printed wiring board includes a core substrate, a first buildup layer laminated on a first surface of the core substrate and including the outermost interlayer resin insulation layer and the outermost conductive layer formed on the outermost interlayer resin insulation layer of the first buildup layer, and a second buildup layer laminated on a second surface of the core substrate and including the outermost interlayer resin insulation layer and the outermost conductive layer formed on the outermost interlayer resin insulation layer of the second buildup layer. The outermost conductive layer of the first buildup layer includes pads positioned to mount a semiconductor device on a surface of the first buildup layer, and the outermost interlayer resin insulation layer of the first buildup layer has a thermal expansion coefficient which is set lower than a thermal expansion coefficient of the outermost interlayer resin insulation layer of the second buildup layer. |
| US08742552B2 |
Semiconductor device
The semiconductor device according to the present invention includes a semiconductor chip, an island having an upper surface to which the semiconductor chip is bonded, a lead arranged around the island, a bonding wire extended between the surface of the semiconductor chip and the upper surface of the lead, and a resin package collectively sealing the semiconductor chip, the island, the lead and the bonding wire, while the lower surface of the island and the lower surface of the lead are exposed on the rear surface of the resin package, and the lead is provided with a recess concaved from the lower surface side and opened on a side surface thereof. |
| US08742550B2 |
Charge compensation semiconductor device
A semiconductor device is provided. The semiconductor device includes a semiconductor body and a source metallization which is arranged on the semiconductor body. The semiconductor body includes in a cross-section a drift region of a first conductivity type, a first body region of a second conductivity type which adjoins the drift region, a first compensation region of the second conductivity type which adjoins the first body region, has a lower maximum doping concentration than the first body region and forms a first pn-junction with the drift region, and a first charge trap. The first charge trap adjoins the first compensation region and includes a field plate and an insulating region which adjoins the drift region and partly surrounds the field plate. The source metallization is arranged in resistive electric connection with the first body region. Further, a method for producing a semiconductor device is provided. |
| US08742548B2 |
Semiconductor device with one-side contact and fabrication method thereof
A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming first spacers covering both sidewalls of each of the first trenches, forming a plurality of second trenches by etching a bottom of each of the first trenches, forming second spacers covering both sidewalls of each of the second trenches, forming a plurality of third trenches by etching a bottom of each of the second trenches, forming an insulation layer covering exposed surfaces of the plurality of the substrate, and forming a contact which exposes one sidewall of each of the second trenches by selectively removing the second spacers. |
| US08742544B2 |
Semiconductor device and manufacturing method thereof
A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon. |
| US08742543B2 |
Microchannel avalanche photodiode (variants)
The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces. |
| US08742540B2 |
Insulation layer to improve capacitor breakdown voltage
A metal-insulator-metal (MIM) capacitor and a method for forming the same are provided. The MIM capacitor includes an insulator on a bottom metal plate, a top metal plate on the insulator, a dielectric layer on the top metal plate and on at least sidewalls of the top metal plate and the insulator, and an anti-reflective coating (ARC) layer over the top metal plate and the bottom metal plate. The dielectric layer preferably extends on an exposed portion of the bottom metal plate not covered by the top metal plate and the insulator. |
| US08742538B2 |
SiGe HBT and manufacturing method thereof
A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is disclosed, which includes: two isolation structures each being formed in a trench; a set of three or more pseudo buried layers formed under each trench with every adjacent two pseudo buried layers of the set being vertically contacted with each other; and a collector region. In this design, the lowermost pseudo buried layers of the two sets are laterally in contact with each other, and the collector region is surrounded by the two isolation structures and the two sets of pseudo buried layers. As the breakdown voltage of a SiGe HBT according to the present invention is determined by the distance between an uppermost pseudo buried layer and the edge of an active region, SiGe HBTs having different breakdown voltages can be achieved. A manufacturing method of the SiGe HBT is also disclosed. |
| US08742534B2 |
Semiconductor device having lateral diode
A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer. |
| US08742532B2 |
Dopant applicator system and method of applying vaporized doping compositions to PV solar wafers
Silicon wafer processing system, apparatus and method of doping silicon wafers with hot concentrated acid dopant compositions for forming p-n junction and back contact layers during processing into PV solar cells. Highly concentrated acid dopant is atomized with pressurized gas and heated in the range of 80-200° C., then introduced into a concentrated acid vapor processing chamber to apply vapor over 1.5-6 min to wafers moving horizontally on a multi-lane conveyor system through the processing chamber. The wafers are dried and forwarded to a diffusion furnace. An optional UV pre-treatment assembly pre-conditions the wafers with UV radiation prior to dopant application, and doped wafers may be post-treated in a UV treatment module before being fired. The wafers may be cooled in the processing chamber. Post-firing, the wafers exhibit excellent sheet resistance in the 60-95Ω/sq range, and are highly uniform across the wafers and wafer-to-wafer. |
| US08742529B2 |
Semiconductor memory
A semiconductor memory includes: a plurality of active regions AAi, AAi−1, . . . , AAn, which extend on a memory cell array along the column length; a plurality of non-uniformly arranged word line patterns WL1, WL2, . . . , extending along the row length; a plurality of select gate line patterns SG1, SG2, . . . , arranged parallel to the plurality of word line patterns; borderless contacts formed near the ends of the word line patterns on the memory cell array, in contact with part of an interconnect extended from the end of the memory cell array, but not in contact with interconnects adjacent to that interconnect; and bit line contacts formed within contact forming regions provided by removing part of the plurality of word line patterns and select gate line patterns through double exposure. |
| US08742524B2 |
Semiconductor device, manufacturing method thereof, and electronic apparatus
A semiconductor device, which is configured as a backside illuminated solid-state imaging device, includes a stacked semiconductor chip which is formed by bonding two or more semiconductor chip units to each other and in which, at least, a pixel array and a multi-layer wiring layer are formed in a first semiconductor chip unit and a logic circuit and a multi-layer wiring layer are formed in a second semiconductor chip unit; a semiconductor-removed region in which a semiconductor section of a part of the first semiconductor chip unit is completely removed; and a plurality of connection wirings which is formed in the semiconductor-removed region and connects the first and second semiconductor chip units to each other. |
| US08742518B2 |
Magnetic tunnel junction with free layer having exchange coupled magnetic elements
A magnetic tunnel junction device includes a reference magnetic layer and a magnetic free layer including first and second magnetic elements that are magnetically exchange coupled. The magnetic exchange coupling between the first and second magnetic elements is configured to achieve a switching current distribution less than about 200% and a long term thermal stability criterion of greater than about 60 kBT. |
| US08742517B2 |
Collapsed mode capacitive sensor
A capacitive sensor is configured for collapsed mode, e.g. for measuring sound or pressure, wherein the moveable element is partitioned into smaller sections. The capacitive sensor provides increased signal to noise ratio. |
| US08742515B2 |
Memory device having a dielectric containing dysprosium doped hafnium oxide
The use of a monolayer or partial monolayer sequencing process, such as atomic layer deposition, to form a dielectric layer of hafnium oxide doped with dysprosium and a method of fabricating such a combination produces a reliable structure for use in a variety of electronic devices. The dielectric structure can include hafnium oxide on a substrate surface followed by dysprosium oxide, and repeating to form a thin laminate structure. A dielectric layer of dysprosium doped hafnium oxide may be used as the gate insulator of a MOSFET, as a capacitor dielectric in a DRAM, as a tunnel gate insulator in flash memories, or as a dielectric in NROM devices. |
| US08742512B2 |
Border between semiconductor transistors with different gate structures
A semiconductor device according to the invention includes: a first region on a semiconductor substrate, in which a first transistor is formed, the first transistor including first gate insulating film 4 containing a high dielectric constant material and first metal gate electrode 5 formed on first gate insulating film 4; a second region adjacent to the first region on the semiconductor substrate, in which a second transistor is formed, the second transistor including second gate insulating film 4 and second metal gate electrode 12 formed on the second gate insulating film, a layered structure of electrode materials of the second transistor being different from a layered structure of electrode materials of the first transistor; and a first and a second line, the lines being of different potentials, wherein a border between the first and the second region overlaps with at most only the first or the second line. |
| US08742508B2 |
Three dimensional FET devices having different device widths
A three dimensional FET device structure which includes a plurality of three dimensional FET devices. Each of the three dimensional FET devices include an insulating base, a three dimensional fin oriented perpendicular to the insulating base, a gate dielectric wrapped around the three dimensional fin and a gate wrapped around the gate dielectric and extending perpendicularly to the three dimensional fin, the three dimensional fin having a device width being defined as the circumference of the three dimensional fin in contact with the gate dielectric. At least a first of the three dimensional FET devices has a first device width while at least a second of the three dimensional FET devices has a second device width. The first device width is different than the second device width. Also included is a method of making the three dimensional FET device structure. |
| US08742506B2 |
Protecting element having first and second high concentration impurity regions separated by insulating region
With a microwave FET, an incorporated Schottky junction capacitance or PN junction capacitance is small and such a junction is weak against static electricity. However, with a microwave device, the method of connecting a protecting diode cannot be used since this method increases the parasitic capacitance and causes degradation of the high-frequency characteristics. In order to solve the above problems, a protecting element, having a first n+-type region-insulating region-second n+-type region arrangement is connected in parallel between two terminals of a protected element having a PN junction, Schottky junction, or capacitor. Since discharge can be performed between the first and second n+ regions that are adjacent each other, electrostatic energy that would reach the operating region of an FET can be attenuated without increasing the parasitic capacitance. |
| US08742504B2 |
Fully-depleted son
A semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a semiconductor substrate, an insulating layer, a first semiconductor layer, a dielectric layer, a second semiconductor layer, a source and drain junction, a gate, and a spacer. The method includes the steps of forming a semiconductor substrate, forming a shallow trench isolation layer, growing a first epitaxial layer, growing a second epitaxial layer, forming a gate, forming a spacer, performing a reactive ion etching, removing a portion of the first epitaxial layer, filling the void with a dielectric, etching back a portion of the dielectric, growing a silicon layer, implanting a source and drain junction, and forming an extension. |
| US08742503B2 |
Recessed single crystalline source and drain for semiconductor-on-insulator devices
After formation of a gate stack, regions in which a source and a drain are to be formed are recessed through the top semiconductor layer and into an upper portion of a buried single crystalline rare earth oxide layer of a semiconductor-on-insulator (SOI) substrate so that a source trench and drain trench are formed. An embedded single crystalline semiconductor portion epitaxially aligned to the buried single crystalline rare earth oxide layer is formed in each of the source trench and the drain trench to form a recessed source and a recessed drain, respectively. Protrusion of the recessed source and recessed drain above the bottom surface of a gate dielectric can be minimized to reduce parasitic capacitive coupling with a gate electrode, while providing low source resistance and drain resistance through the increased thickness of the recessed source and recessed drain relative to the thickness of the top semiconductor layer. |
| US08742497B2 |
Semiconductor device
A semiconductor device is provided, in which work of a parasitic bipolar transistor can be suppressed and a potential difference can be provided between a source region and a back gate region. A high voltage tolerant transistor formed over a semiconductor substrate includes: a well region of a first conductivity type; a first impurity region as the source region; and a second impurity region as a drain region. The semiconductor device further includes a third impurity region and a gate electrode for isolation. The third impurity region is formed, in planar view, between a pair of the first impurity regions, and from which a potential of the well region is extracted. The gate electrode for isolation is formed over the main surface between the first impurity region and the third impurity region. |
| US08742494B2 |
Semiconductor device and method of forming the same
A semiconductor device includes a semiconductor substrate having a groove and an active region adjacent to the groove; a buried gate electrode in the groove; and a capacitor contact including a first portion and a second portion over the first portion. The first portion is greater in horizontal dimension than the second portion. The first portion has a bottom surface that is in contact with an upper surface of the active region. |
| US08742492B2 |
Device with a vertical gate structure
A device includes a wafer substrate, a conical frustum structure formed in the wafer substrate, and a gate all-around (GAA) structure circumscribing the middle portion of the conical frustum structure. The conical frustum structure includes a drain formed at a bottom portion of the conical frustum, a source formed at a top portion of the vertical conical frustum, and a channel formed at a middle portion of the conical frustum connecting the source and the drain. The GAA structure overlaps with the source at one side of the GAA structure, crosses over the channel, and overlaps with the drain at another side of the GAA structure. |
| US08742489B2 |
Nonvolatile semiconductor memory
According to one embodiment, a nonvolatile semiconductor memory including a first gate insulating film formed on a channel region of a semiconductor substrate, a first particle layer formed in the first gate insulating film, a charge storage part formed on the first gate insulating film, a second gate insulating film which is formed on the charge storage part, a second particle layer formed in the second gate insulating film, and a gate electrode formed on the second gate insulating film. The first particle layer includes first conductive particles that satisfy Coulomb blockade conditions. The second particle layer includes second conductive particles that satisfy Coulomb blockade conditions and differs from the first conductive particles in average particle diameter. |
| US08742485B2 |
Inversion mode varactor
In one exemplary embodiment of the invention, a method includes: providing an inversion mode varactor having a substrate, a backgate layer overlying the substrate, an insulating layer overlying the backgate layer, a semiconductor layer overlying the insulating layer and at least one metal-oxide semiconductor field effect transistor (MOSFET) device disposed upon the semiconductor layer, where the semiconductor layer includes a source region and a drain region, where the at least one MOSFET device includes a gate stack defining a channel between the source region and the drain region, where the gate stack has a gate dielectric layer overlying the semiconductor layer and a conductive layer overlying the gate dielectric layer; and applying a bias voltage to the backgate layer to form an inversion region in the semiconductor layer at an interface between the semiconductor layer and the insulating layer. |
| US08742483B2 |
DRAM arrays
The invention includes methods for utilizing partial silicon-on-insulator (SOI) technology in combination with fin field effect transistor (finFET) technology to form transistors particularly suitable for utilization in dynamic random access memory (DRAM) arrays. The invention also includes DRAM arrays having low rates of refresh. Additionally, the invention includes semiconductor constructions containing transistors with horizontally-opposing source/drain regions and channel regions between the source/drain regions. The transistors can include gates that encircle at least three-fourths of at least portions of the channel regions, and in some aspects can include gates that encircle substantially an entirety of at least portions of the channel regions. |
| US08742475B2 |
Field effect transistor device and fabrication
In one aspect of the present invention, a field effect transistor (FET) device includes a first FET including a dielectric layer disposed on a substrate, a first portion of a first metal layer disposed on the dielectric layer, and a second metal layer disposed on the first metal layer, a second FET including a second portion of the first metal layer disposed on the dielectric layer, and a boundary region separating the first FET from the second FET. |
| US08742474B2 |
Power semiconductor device having an active region and an electric field reduction region
A power semiconductor device of the present invention has an active region and an electric field reduction region and includes: an emitter region of a first conductivity type; a base region of a second conductivity type in contact with the emitter region; an electrical strength providing region of the first conductivity type in contact with the base region; a collector region of the second conductivity type in contact with the electrical strength providing region; and a collector electrode in contact with the collector region; wherein the collector region is disposed on both a active region and a electric field reduction region each containing a dopant of the second conductivity type, and the collector region disposed on the electric field reduction region includes a region having a lower density of carriers of the second conductivity type than the collector region disposed on the active region. |
| US08742472B2 |
Chemically sensitive sensors with sample and hold capacitors
Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. |
| US08742470B2 |
pH sensor and manufacturing method
Disclosed is a pH sensor comprising a carrier (10) comprising a plurality of conductive tracks and an exposed conductive area (40) defining a reference electrode connected to one of said conductive tracks; a sensing device (30) mounted on the carrier and connected at least one other of said conductive tracks; an encapsulation (20) covering the carrier, said encapsulation comprising a first cavity (22) exposing a surface (32) of the sensing device and a second cavity (24) exposing the exposed conductive area, said second cavity comprising a reference electrode material (42) and an ion reservoir material (44) sharing at least one ion type with said reference electrode material, the reference electrode material being sandwiched between the exposed conductive area and the ion reservoir material. A method of manufacturing such a pH sensor is also disclosed. |
| US08742465B2 |
Semiconductor device
A method of cutting an electrical fuse including a first conductor and a second conductor, the first conductor including a first cutting target region, the second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on a semiconductor substrate, the method includes flowing a current in the first conductor, causing material of the first conductor to flow outward near a coupling portion connecting the first conductor to the second conductor, and cutting the first cutting target region and the second cutting target region. |
| US08742463B2 |
Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with outer positioned gate contacts
A semiconductor device includes first and second p-type diffusion regions, and first and second n-type diffusion regions that are each electrically connected to a common node. A gate electrode level region is formed in accordance with a virtual grate defined by virtual lines that extend in only a first parallel direction, such that an equal perpendicular spacing exists between adjacent ones of the virtual lines. Conductive features are each defined within any one gate level channel that is uniquely associated with and defined along one of a number of virtual lines of the virtual grate. The conductive features form gate electrodes of first and second PMOS transistor devices, and first and second NMOS transistor devices. The gate electrodes of the first PMOS and second NMOS transistor devices are electrically connected, and the gate electrodes of the second PMOS and first NMOS transistor devices are electrically connected. |
| US08742459B2 |
High voltage III-nitride semiconductor devices
A III-N device is described has a buffer layer, a first III-N material layer on the buffer layer, a second III-N material layer on the first III-N material layer on an opposite side from the buffer layer and a dispersion blocking layer between the buffer layer and the channel layer. The first III-N material layer is a channel layer and a compositional difference between the first III-N material layer and the second III-N material layer induces a 2DEG channel in the first III-N material layer. A sheet or a distribution of negative charge at an interface of the channel layer and the dispersion blocking layer confines electrons away from the buffer layer. |
| US08742457B2 |
Anti-fuses on semiconductor fins
A device includes a substrate, isolation regions at a surface of the substrate, and a semiconductor region over a top surface of the isolation regions. A conductive feature is disposed over the top surface of the isolation regions, wherein the conductive feature is adjacent to the semiconductor region. A dielectric material is disposed between the conductive feature and the semiconductor region. The dielectric material, the conductive feature, and the semiconductor region form an anti-fuse. |
| US08742455B2 |
Apparatus for electrostatic discharge protection
An apparatus includes an electrostatic discharge (ESD) protection device. In one embodiment, the protection device electrically coupled between a first node and a second node of an internal circuit to be protected from transient electrical events. The protection device includes a bipolar device or a silicon-controlled rectifier (SCR). The bipolar device or SCR can have a modified structure or additional circuitry to have a selected holding voltage and/or trigger voltage to provide protection over the internal circuit. The additional circuitry can include one or more resistors, one or more diodes, and/or a timer circuit to adjust the trigger and/or holding voltages of the bipolar device or SCR to a desired level. The protection device can provide protection over a transient voltage that ranges, for example, from about 100 V to 330V. |
| US08742452B2 |
Semiconductor device and method for manufacturing semiconductor device
Disclosed herein are a semiconductor device, and a method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate, a base region formed on an upper region of an inside of the semiconductor substrate, at least one gate electrode that penetrates through the base region and has an inverted triangular shape, a gate insulating film formed to enclose an upper portion of the semiconductor substrate and the gate electrode, an inter-layer insulating film formed on an upper portion of the gate electrode and the gate insulating film, an emitter region formed inside the base region and on both sides of the gate electrode, an emitter metal layer formed on an upper portion of the base region and inter-layer insulating film, and a buffer region formed to enclose a lower portion of the gate electrode and to be spaced apart from the base region. |
| US08742448B2 |
Optoelectronic component
An optoelectronic component has an optoelectronic semiconductor chip, a contact frame, a contact carrier, a first electrical connection zone and a second electrical connection zone electrically insulated from the first electrical connection zone, which each have a part of the contact frame and a part of the contact carrier, wherein the contact frame has a recess which separates the first electrical connection zone at least in places from the second electrical connection zone and into which the optoelectronic semiconductor chip projects, and wherein the contact frame has a contact element which connects the contact frame electrically with the optoelectronic semiconductor chip. |
| US08742446B2 |
Light emitting element and method of manufacturing the same
A light emitting element includes a first electrode, an organic layer formed on the first electrode, a resistance layer formed on the organic layer, a second electrode, and a conductive resin layer formed between the resistance layer and the second electrode. |
| US08742445B2 |
Light emitting device and light unit
Provided are a light emitting device and a light unit. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a first conductive layer having a first portion disposed under the second conductive type semiconductor layer and a second portion electrically connected to the first conductive type semiconductor layer; a second conductive layer under the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; an insulation layer between the first conductive layer and the second conductive layer; and a tunnel barrier between the first portion of the first conductive layer and the second conductive layer. |
| US08742441B2 |
Light-emitting diode with embedded elements
A light-emitting diode (LED) device is provided. The LED device has a substrate and an LED structure overlying the substrate. Embedded elements are embedded within one or more layers of the LED structure. In an embodiment, the embedded elements include a dielectric material extending through the LED structure such that the embedded elements are surrounded by the LED structure. In another embodiment, the embedded elements only extend through an upper layer of the LED structure, or alternatively, partially through the upper layer of the LED structure. Another conductive layer may be formed over the upper layer of the LED structure and the embedded elements. |
| US08742438B2 |
Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency. |
| US08742436B2 |
Organic light emitting display device and method for fabricating the same
The present invention relates to an organic light emitting display device which can prevent a light compensation layer from cracking and a method for fabricating the same. |
| US08742434B2 |
Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
The present invention aims to provide a semiconductor light emitting device that may be firmly attached to a substrate with maintaining excellent light emitting efficiency, and a manufacturing method of the same, and a lighting apparatus and a display apparatus using the same.In order to achieve the above object, the semiconductor light emitting device according to the present invention includes a luminous layer, a light transmission layer disposed over a main surface of the luminous layer, and having depressions on a surface facing away from the luminous layer, and a transmission membrane disposed on the light transmission layer so as to follow contours of the depressions, and light from the luminous layer is irradiated so as to pass through the light transmission layer and the transmission membrane. |
| US08742431B2 |
Photo-coupler device
A photo-coupler device includes a P-type substrate, a P-type epitaxial layer, an insulation layer, a plurality of shielding layers, a metal layer and a passivation layer. The P-type epitaxial layer is deposited on the P-type substrate and includes two conducting regions and a plurality of N+ electrode regions between the two conducting regions. The insulation layer is deposited on the P-type epitaxial layer. The shielding layers comprising first shielding layers and second shielding layers are deposited in the insulation layer in parallel in a horizontal direction, and the first shielding layers are arranged for correspondingly covering the two conducting regions, the second shielding layers are arranged for correspondingly covering the at least one of the N+ electrode regions. The metal layer is made of Ag and is deposited on the insulation layer. The passivation layer is deposited on the metal layer. |
| US08742429B2 |
Semiconductor light emitting device and fabrication method thereof
A semiconductor light emitting device includes a first semiconductor layer having a bottom surface with uneven patterns, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, a second electrode formed on the second semiconductor layer, and a first electrode formed under the first semiconductor layer. |
| US08742419B2 |
Display unit
A display unit with which lowering of long-term reliability of a transistor is decreased is provided. The display unit includes a display section having a plurality of organic EL devices with light emitting color different from each other and a plurality of pixel circuits that are singly provided for every said organic EL device for every pixel. The pixel circuit has a first transistor for writing a video signal, a second transistor for driving the organic EL device based on the video signal written by the first transistor, and a retentive capacity, and out of the first transistor and the second transistor, a third transistor provided correspondingly to a second organic EL device adjacent to a first organic EL device is arranged farther from the first organic EL device than a first retentive capacity provided correspondingly to the second organic EL device out of the retentive capacity. |
| US08742418B2 |
Thin film transistor and display device
A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof. |
| US08742417B2 |
Thin film transistor array panel and manufacturing method of the same
According to this disclosure of a thin film transistor array panel and the manufacturing method thereof, dams have a function of forming a light blocking member by an inkjet printing method and are formed along with color filters. Spacers are formed by the inkjet printing method along with the light blocking member and color filters. Advantages of this panel and its manufacturing method are a reduction in an alignment error of the light blocking member and the color filters, reduced manufacturing cost, and a simplified manufacturing. |
| US08742413B2 |
Photosensor and method of manufacturing the same
In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer. |
| US08742407B2 |
Light emitting element with layers having complementary colors for absorbing light
A light emitting element with a high contrast is realized. A light emitting device with a high contrast is achieved by using the light emitting element with an excellent contrast. The light emitting element has a layer containing a light emitting substance interposed between a first electrode and a second electrode, and the layer containing the light emitting substance includes a light emitting layer, a layer containing a first organic compound, and a layer containing a second organic compound. The first electrode has a light-transmitting property, and the layer containing the first organic compound and the layer containing the second organic compound are interposed between the second electrode and the light emitting layer. Furthermore, color of the first organic compound and color of the second organic compound are complementary. |
| US08742402B2 |
Organic light-emitting device having a cyano compound
An organic light-emitting device including a first electrode and a first layer, wherein the first electrode includes a first element-containing zinc oxide layer and the first layer includes a cyano group-containing compound. |
| US08742400B2 |
Graphene switching device including tunable barrier
A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode. |
| US08742395B2 |
Semiconductor light emitting device
In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape. |
| US08742390B1 |
Logic compatible RRAM structure and process
A memory cell and method including a first electrode conformally formed through a first opening in a first dielectric layer, a resistive layer conformally formed on the first electrode, a second electrode conformally formed on the resistive layer, and a second dielectric layer conformally formed on the second electrode, the second dielectric layer including a second opening. The first dielectric layer is formed on a substrate including a first metal layer. The first electrode and the resistive layer collectively include a first lip region that extends a first distance beyond a region defined by the first opening. The second electrode and the second dielectric layer collectively include a second lip region that extends a second distance beyond the region defined by the first opening. The second electrode is coupled to a second metal layer using a via that extends through the second opening. |
| US08742388B2 |
Variable resistance memory devices
Variable resistance memory devices may include a semiconductor layer including first, second, third doped regions, a variable resistance pattern on the semiconductor layer, a lower electrode between the semiconductor layer and the variable resistance pattern, and a first metal silicide pattern in contact with the semiconductor layer. The third doped region may be spaced apart from the first metal silicide pattern, the first doped region may be spaced apart from the third doped region, and a second doped region may be interposed between the first and third doped regions and be in contact with the first metal silicide pattern. The first doped region may have the same conductivity type as the third doped region and a different conductivity type from the second doped region. |
| US08742386B2 |
Oxide based memory with a controlled oxygen vacancy conduction path
Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming a substoichiometric oxide over the first conductive element, forming a second conductive element over the substoichiometric oxide, and oxidizing edges of the substoichiometric oxide by subjecting the substoichiometric oxide to an oxidizing environment to define a controlled oxygen vacancy conduction path near a center of the oxide. |
| US08742381B2 |
Radiation source with cleaning apparatus
A radiation source includes an uncapped Mo/Si multilayer mirror, and a cleaning apparatus configured to remove a deposition comprising Sn on the uncapped Mo/Si multilayer mirror. The cleaning apparatus is configured to provide a gas comprising one or more of H2, D2 and HD and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the radiation source, to produce hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas, and to supply the hydrogen and/or deuterium radicals and radicals of the one or more additional compounds to the uncapped Mo/Si multilayer mirror to remove at least part of the deposition. |
| US08742380B2 |
Target supply device, extreme ultraviolet light generation apparatus, and method for supplying target
A target supply device is provided that may include a pair of rails arranged to face each other, the rails having electrically conductive properties, a target transport mechanism configured to supply a target material into a space between the rails and in contact with the rails, and a power supply connected to the rails and configured to supply a current to the target material through the rails. Methods and systems using the target supply device are also provided. |
| US08742379B2 |
Window unit, window device, laser apparatus, and extreme ultraviolet light generation system
A window unit may include: a window configured to allow a laser beam to be transmitted therethrough; and a holder for holding the window at a periphery thereof, the holder being provided with a flow channel thereinside configured to allow a fluid to flow. |
| US08742377B2 |
Hadron treatment planning with adequate biological weighting
Treatment planning methods are provided that determine the variability of relative biological effectiveness (RBE) along a beam line and calculate, among other things, what intensity of hadron beam such as a proton or a carbon ion beam should be applied to achieve a desired biological dose at treatment site of a patient afflicted with a medical condition. Typically, three or four RBE values at three or four corresponding spacially-dispersed intervals along the beam line are calculated. In one embodiment, two RBE values for the spread-out Bragg peak (SOBP) region of the treatment site; one for the proximal section and one for the declining distal section is calculated. A third and different RBE value may be determined for the distal edge region of the SOBP. A fourth value may also be calculated for a pre-SOBP region. |
| US08742376B2 |
Method and apparatus of mask drawing using a grounding body at lowest resistance value position of the mask
A mask drawing method includes: disposing a grounding body provided with a grounding pin at a plurality of different places on a mask substrate to measure resistance values; disposing the grounding body at a position where the resistance value is lowest, among the plural positions where the resistance values are measured; and irradiating an electron beam to the mask substrate to draw a desired pattern. |
| US08742374B2 |
Ion implantation apparatus
A hybrid ion implantation apparatus that is equipped with shaping masks that shape the two edges of a ribbon-like ion beam IB in the short-side direction, a profiler that measures the current distribution in the long-side direction of the ion beam IB shaped by the shaping masks, and an electron beam supply unit that supplies an electron beam EB across the entire region in the long-side direction of the ion beam IB prior to its shaping by the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam EB at each location in the long-side direction of the ion beam IB according to results of measurements by the profiler. |
| US08742372B2 |
Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (PL) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling PL measurements to be analyzed in terms of effective minority carrier lifetime. In another embodiment the effective lifetime is measured by another technique, enabling PL measurements to be analyzed in terms of background doping density. In yet another embodiment, the effect of background doping density is removed by calculating intensity ratios of two PL measurements obtained in different spectral regions, or generated by different excitation wavelengths. The methods are particularly useful for bulk samples such as bricks or ingots of silicon, where information can be obtained over a much wider range of bulk lifetime values than is possible with thin, surface-limited samples such as silicon wafers. The methods may find application in solar cell manufacturing for improving the manufacture of silicon ingots and bricks, or for providing a cutting guide for wafering. |
| US08742371B2 |
Method for generating optical tomographic information, optical tomographic information generating apparatus, and storage medium
Measurement data of intensities of fluorescence obtained by directing excitation light onto a subject is acquired. An initial value of an absorption coefficient of the phosphor is set on the basis of a concentration distribution of the phosphor, an intensity distribution of the fluorescence on the basis of an absorption coefficient and a diffusion coefficient (reduced scattering coefficient) of the subject, which are set beforehand, are calculated, and the measurement data is compared with the calculation result. If these are found not to be matched, an absorption coefficient of the phosphor at which the error will be a minimum is estimated by performing an inverse problem calculation using a mathematical model. The calculation of the intensity distribution of the fluorescence and evaluation of the error from the obtained concentration distribution are repeated using the absorption coefficient, and a concentration distribution for which the error is the minimum is acquired. |
| US08742370B2 |
Gas sensor
In one aspect of the disclosure, a gas sensor is provided, comprising: a chamber for containing a gas sample in use, and a radiation source adapted to emit radiation within a first waveband. A photoluminescent material, upon absorption of radiation of a first wavelength within the first waveband, emits radiation of a second wavelength, the photoluminescent material being responsive to the presence of a target gas species in the gas sample. The gas sensor further comprises a luminescence detector assembly. The luminescence detector assembly is adapted to detect radiation of the second wavelength and output a corresponding measurement signal related to the concentration of the target gas species. An optics assembly is adapted to receive radiation emitted by the radiation source and to converge the radiation towards a location at which the luminescence detector assembly cannot receive radiation. |
| US08742368B2 |
Device and method for measuring scattering of radiation
A photometric device for investigating a sample, comprises an array of radiation sources that are spaced apart from one another, and which are operable to generate radiation that differs from that generated by the other radiation sources in the array. The device includes a lens arrangement for focusing the radiation at a region of space where a sample may be located for example by means of a sample holder, and at least one detector for receiving radiation from the region of space. Preferably, a number of detectors are employed that are spaced apart from one another, and especially about an axis of the device, so that one radiation detector can detect radiation transmitted by the sample and the other detectors can detect radiation scattered by it. The radiation sources may be time division multiplexed so that in each time slot the detectors receive radiation originating from each radiation source. In an alternative embodiment, the radiation from the region of space may be transmitted to the sample via a beam homogeniser, for example an optical waveguide in the form of an optical fibre, which may be used to reduce or remove speckle where laser diodes are employed as the radiation sources. The device may be used to determine the particle size distribution of particles in a sample by a method employing Bayesian inference. |
| US08742366B2 |
UV liquid steriliser
A fluid treatment apparatus particularly for sterilizing drinks comprises an elongate tubular duct (110) and an elongate UV light source (111) extending longitudinally of the duct (110). The fluid flows longitudinally of the duct (110) in a thin annular low passage (114) which extends around the UV light source (111). A mixing device (112) disposed between adjacent longitudinal portions of the duct (110) for diverts all of the fluid flowing along a first portion of the passage (114) through fluid mixing means (113,116) in the device (112) and returns the mixed fluid to a second portion of the passage (114). Micro-organisms in the thin flow of fluid are killed as they come within close proximity of the light source (111). The mixing device (112) causes all of the flow to be thoroughly mixed and returned to the flow passage (114). The provision of a plurality of mixing devices along the length of the duct (110) increases the likelihood that all microorganisms receive a sufficient lethal dose of UV radiation. |
| US08742365B2 |
Ultraviolet water treatment apparatus
According to one embodiment, an ultraviolet water treatment apparatus includes an ultraviolet lamp unit provided with a first plumbing flange coupling on each of both ends thereof, and further provided therein with an ultraviolet irradiation tube including an ultraviolet lamp and a lamp protective tube configured to protect the ultraviolet lamp, and a cleaning device drive unit provided with a second plumbing flange coupling on each of both ends thereof and configured to drive a cleaning device configured to clean a surface of the lamp protective tube. The ultraviolet lamp unit and the cleaning device drive unit are coupled with each other on the first and second plumbing flange couplings. |
| US08742361B2 |
Focused charged particle column for operation at different beam energies at a target
A charged particle column having improved performance at multiple beam energies. The column employs a four-element objective lens to enable improved beam focusing performance at both high and low beam energies at a target, with differing focus voltage configurations for different beam energies. By changing the voltages applied to the four electrodes of the objective lens, different focusing conditions may be rapidly configured, enabling rapid toggling between optimized imaging and optimized processing of a target. |
| US08742359B2 |
Solid-state imaging apparatus and imaging system
An imaging apparatus has an imaging area formed by arranging a plurality of imaging blocks each including a pixel array, a plurality of vertical signal lines, a horizontal output line commonly provided for the plurality of vertical signal lines to read out signals read out to the plurality of vertical signal lines, a first scanning circuit, and a second scanning circuit, wherein signals of the pixels of a selected row in the pixel array are read out to the plurality of vertical signal lines in accordance with a driving pulse from the first scanning circuit, the signals read out to the plurality of vertical signal lines are sequentially read out to the horizontal output line in accordance with a driving pulse from the second scanning circuit, and a length in a row direction of the pixel array is smaller than a length in a column direction of the pixel array. |
| US08742358B2 |
Photonic radiation detection device, and methods for dimensioning and operating such device
A photonic radiation detection device includes a collimator, a detector, means for localization in the detection plane defining on the one hand the partitioning of the detection plane in physical or virtual pixels of transversal dimensions smaller than those of the collimator channels, and associating on the other hand one of said pixels to each photon interaction. The detection device has at least in one previously selected acquisition configuration, a degree of pixelation in the detection plane greater than 1 and a collimator-detector distance (c) greater than one tenth of the septal height (h) of the collimator. A method for dimensioning such a device includes, for at least one given spatial frequency, calculating and comparing merit indicator values for different acquisition configurations of a structural model of the detection device. |
| US08742354B2 |
Radiation image capturing device and radiation image capturing method
A radiation image capturing device includes: an image capturing unit that captures a radiation image using irradiated radiation; a radiation detection unit that detects the radiation; a determination unit that determines whether image capturing preparation is completed; and a control unit that starts detection of the radiation by the radiation detection unit, in a case in which the determination unit determines that the image capturing preparation is completed, and controls the image capturing unit to capture a radiation image, in a case in which the radiation detection unit detects the radiation. |
| US08742353B2 |
Single terahertz wave time-waveform measuring device
A single terahertz wave time-waveform measuring device 1 acquires information on an object to be measured 9 by using a terahertz wave, and includes a light source 11, a beam diameter adjuster 12, a separator 13, a terahertz wave generator 21, a light path length difference adjuster 31, a pulse front tilting unit 32, a polarizer 33, a wave synthesizer 41, an electro-optic crystal 42, an analyzer 43, and a photodetector 44. The terahertz wave generator 21 generates a pulse terahertz wave in response to an input of pump light and outputs the pulse terahertz wave. The pulse front tilting unit 32 makes pulse fronts of the terahertz wave and the probe light when being input into the electro-optic crystal 42 nonparallel to each other by tilting the pulse front of the probe light. |
| US08742351B2 |
Spectrophotometer
When a system is powered on and becomes ready for a measurement, it automatically begins to acquire an interferogram (IFG). When a new IFG is acquired, if a background (BKG) IFG is present in a memory but there is no sample IFG (S2 and S4), the new IFG is compared with the BKG-IFG and, if the two IFGs are identical, the new IFG is added to the BKG-IFG (S5, S6 and S7). When an operator sets a sample in a sample chamber and the new IFG shows a change, the IFG is stored as a sample IFG (S8). Then, a sample measurement is initiated. After that, when a new IFG is found to be identical to the sample IFG stored in the memory (S9 and S10), the new IFG is added to the sample IFG (S13). The sample measurement is completed when the number of sample IFGs stored in the memory has reached a predetermined accumulation number. Thus, the sample measurement is automatically performed, for which the operator only needs to set a sample. The workload on the operator is reduced and the measurement task can be efficiently performed. |
| US08742350B2 |
Proximity sensor
A proximity sensor includes a printed circuit board (PCB); a first cup and a second cup embedded in the PCB; an electromagnetic radiation transmitter operably mounted in the first cup; and an electromagnetic radiation receiver operably mounted in the second cup. |
| US08742347B2 |
Three-dimensional hot spot localization
A non-destructive approach for the 3D localization of buried hot spots in electronic device architectures by use of Lock-in Thermography (LIT). The 3D analysis is based on the principles of thermal wave propagation through different material layers and the resulting phase shift/thermal time delay. With more complex multi level stacked die architectures it is necessary to acquire multiple LIT results at different excitation frequencies for precise hot spot depth localization. Additionally, the use of multiple time-resolved thermal waveforms, measured in a minimized field of view on top of the hot spot location, can be used to speed up the data acquisition. The shape of the resulting waveforms can be analyzed to further increase the detection accuracy and confidence level. |
| US08742344B2 |
Inspection apparatus
An inspection apparatus includes: beam generation means for generating any of charged particles and electromagnetic waves as a beam; a primary optical system that guides the beam into an inspection object held in a working chamber and irradiates the inspection object with the beam; a secondary optical system that detects secondary charged particles occurring from the inspection object; and an image processing system that forms an image on the basis of the detected secondary charged particles. The primary optical system includes a photoelectron generator having a photoelectronic surface. The base material of the photoelectronic surface is made of material having a higher thermal conductivity than the thermal conductivity of quartz. A central portion of the inspection object is provided with a central flat portion 390. The periphery of the central flat portion 390 is provided with peripheral flat portion 392 via a step 391. The periphery of the step 391 is provided with an electric field correction plate 400. A surface voltage equivalent to a surface voltage applied to the inspection object is applied to an electrode 401 on the electric field correction plate 400. |
| US08742343B2 |
Charged particle beam system and method of axial alignment of charged particle beam
A method of axially aligning a charged particle beam involves an image data acquisition step and a calculation step. The image data acquisition step consists of obtaining first to third sets of image data by scanning a shielding member placed in the path of the beam with the beam while varying conditions of the excitation currents through first and second alignment coils, respectively. The calculation step consists of calculating the values of the excitation currents through the first and second alignment coils, respectively, for axial alignment of the beam, based on the obtained first to third sets of image data. |
| US08742339B2 |
Mass spectrometer
A mass analyzer is provided comprising a plurality of electrodes having apertures through which ions are transmitted. A plurality of pseudo-potential corrugations are created along the axis of the mass analyzer. The amplitude or depth of the pseudo-potential corrugations is inversely proportional to the mass to charge ratio of an ion. Transient DC voltages are applied to the electrodes in order to urge ions along the length of the mass analyzer. The amplitude of the transient DC voltages applied to the electrodes is increased with time and ions are caused to be emitted from the mass analyzer in reverse order of their mass to charge ratio. Two AC or RF voltages are applied to the electrodes. The first AC or RF voltage is arranged to provide optimal pseudo-potential corrugations while the second AC or RF voltage is arranged to provide optimal radial confinement of ions within the mass analyzer. |
| US08742334B2 |
Spinning cell device for fast standardization in laser ablation inductively coupled plasma spectrometry
A spinning cell device is described for fast and convenient standardization and analysis of constituents and isotopes in solid samples by laser ablation inductively coupled plasma (LA-ICP) spectrometry. The method and apparatus for performing the method require the sample under test and a standard to be spun during ablation allowing the quasi-simultaneous ablation of both materials. The aerosols resulting from the ablation of sample and standard are mixed in the ablation cell allowing quantification of the ablated metals by the method of standard addition or isotope dilution. The relative proportion of standard verses sample ablated can be changed by altering the trajectory of the laser beam. The ablated aerosol is swept into an inductively coupled plasma by a carrier gas and analyzed by mass spectrometry. |
| US08742328B2 |
Logging-while-drilling tool incorporating electronic radiation generator and method for using same
Logging-while-drilling tools incorporating an electronic radiation generator, such as an electronic X-ray generator, and a method for using the same are provided. One example of such a logging-while-drilling tool may include a circumferential drill collar, a chassis disposed radially interior to the drill collar, and an electronic X-ray generator and an X-ray detector disposed within the chassis. The electronic X-ray generator may emit X-rays out of the logging-while-drilling tool into a subterranean formation. The X-ray detector may detect X-rays that return to the logging-while-drilling tool after scattering in the subterranean formation, which may be used to determine a density and/or a lithology of the subterranean formation. |
| US08742326B2 |
Determination of beam parameters for asymmetrical photon beams
An apparatus and a method for determining a beam parameter of an asymmetrical photon beam generated by an accelerator are provided. A beam profile of a symmetrical photon beam is measured and normalized. For the asymmetrical photon beam, a normalization of the beam profile is implemented such that the maximum of the profile corresponds to a value of the normalized symmetrical beam profile at the site of the maximum. The parameter determination takes place using a conventional beam parameter definition. |
| US08742323B2 |
Semiconductor module
A semiconductor module including a semiconductor chip having a light receiving device formed at a front thereof and a light permeable cover having a front, a back, and a side. The light permeable cover is disposed opposite to the front of the semiconductor chip such that the front of the semiconductor chip is covered by the back of the light permeable cover. The light permeable cover is provided at the outer circumferential region of the front thereof and at the side thereof with a light shielding layer. It is possible to prevent the incidence of unnecessary light from the side of the light permeable cover of a CSP and to easily adjust the distance between a lens and the front of the semiconductor chip within tolerance. |
| US08742319B2 |
Sensor and inspection system deploying an optical conduit
Embodiments of an inspection system comprise a conduit that can transmit light between a sensor and a processing component. In one embodiment, the sensor comprises an element that generates an electromagnetic field in response to an input from the processing component. The input comprises a light signal that traverses the conduit to the sensor. The sensor converts the light signal to an electrical signal to operate the element. In one example, the sensor generates a plurality of light signals, which also traverse the conduit to the diagnostic component where the lights signals are processed to determine, in one example, proximity of an object to the sensor. |
| US08742318B2 |
Tool length measuring method and tool length measuring device
In a tool length measuring method measuring a length of a tool based on a movement amount of the tool from a predetermined position when the tool is moved from the predetermined position in a predetermined direction and interrupts a laser beam, the movement of the tool in a direction in which the tool approaches a main body of a laser device is stopped when a static signal indicating that the tool is interrupting the laser beam is detected. |
| US08742316B2 |
Photo detector having coupling capacitor
Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode. |
| US08742314B2 |
Light amount detecting apparatus, and light amount information processing apparatus
A light amount detecting apparatus includes: a photoelectric converting element converting quantity of light inputted to current; a current/voltage converting device having a positive input terminal connected to a first terminal of the photoelectric converting element, a negative input terminal connected to a second terminal of the photoelectric converting element, a negative output terminal for reversing polarity of a current inputted to the positive input terminal and outputting it as a voltage, a positive output terminal for reversing polarity of a current inputted to the negative input terminal and outputting it as a voltage, a first negative feedback resistor connecting the positive and negative output terminals, and a second negative feedback resistor connected between the negative and positive output terminals, the current/voltage converting device setting the photoelectric converting element in zero bias and converting the converted current to the voltage; and an amplifying device for amplifying the converted voltage. |
| US08742310B2 |
Imaging device with high dynamic range
A high dynamic range imaging device including a first substrate with multiple pixels, each pixel having a photodetector associated with multiple read-out circuits. Each read-out circuit including a device for charging and discharging the photodetector that is associated with the read-out circuit. Each charging and discharging device being controlled by a charge and discharge activation signal imposing an integration time of the photodetector of each pixel associated with the read-out circuit. The device further including a second substrate, distinct from the first, with an electronic control circuit for controlling the charging and discharging devices, designed for generating multiple charge and discharge activation signals to be transmitted to the charging and discharging devices using electrical connections between the first and second substrates. Each pixel or group of pixels is associated to an activation signal imposing an integration time specific and appropriate to the pixel or group of pixels. |
| US08742303B2 |
Heating apparatus and method for making the same
A heating apparatus includes a heating element adapted to be disposed on a substrate. The heating element includes electrodes and a multi-layer conductive coating of nano-thickness disposed between the substrate and electrodes. The multi-layer conductive coating has a structure and composition which stabilize performance of the heating element at high temperatures. The multi-layer conductive coating may be produced by spray pyrolysis. |
| US08742301B2 |
Heater apparatus for a display panel
A heater apparatus includes: a heater unit including a heater resistor; a first switching unit disposed on a downstream side of the heater resistor for on/off controlling a power supply path from a supply voltage; a second switching unit disposed on an upstream side of the heater resistor for on/off controlling the power supply path from the supply voltage; and a controller outputting first and second control signals for on/off controlling the first and second switching units, respectively. The first switching unit is switched on when the first control signal is high, and the second switching unit is switched on when the second control signal is low. The heater unit is switched on when the sensor temperature is equal to or lower than a first threshold, and is switched off when the sensor temperature is equal to or higher than a second threshold. |
| US08742299B2 |
Method for heating a container placed on a cooktop by heating means associated to inductors
A method for heating a container (Ri) placed on a cooktop including heating elements which are associated respectively with inductors which form elements for detecting the presence of the container and are distributed along a frame which is embodied such that it is two-dimensional in a cooking area. The method includes searching (E20) a heating area (Zi) having the heating elements arrangement which are at least partially covered by the container and computing (E60) a power supplied by each heating element of the heating area (Zi) according to a total specified power (Pi) associated thereto and the degree of coverage of each detection element associated to heating element by the container (Ri). Utilization, in particular, is for an inductive cooktop. |
| US08742296B2 |
Self-inflating heat sanitizer
The present invention is a self-inflating heat sanitizer, which uses convective heat transfer to eradicate bed bugs within an item. The heater unit propagates and reheats the air within the present invention as the heated air flows through the present invention. The heat chamber enclosure is a compartment that allows the heated air to circulate around the item and raise the temperature of the item to above 140° F. The structure of the heat chamber enclosure is inflatable walls, which are pressurized when the heated air flows into the heat chamber enclosure. The heated air will then vent out of the inflatable walls into the treatment volume, where the item is located. The insulated ducts lead the heated air from the heater unit into the inflatable walls and lead the heated air from the treatment volume back to the heater unit. |
| US08742294B2 |
MIG welded joint between aluminum and steel members and MIG welding process
A MIG welded joint between aluminum and steel members is obtained by overlapping the aluminum member and the steel member each other and performing MIG welding using a filler wire made of a 4000 or 5000 series aluminum alloy on an end face of the overlapped aluminum member, wherein the aluminum member has a thickness P ranging from 0.5 to 2.0 mm, and the steel member has a thickness Q satisfying the following formula: 0.6≦Q/P≦0.8. |
| US08742293B2 |
Inverter output rectifier circuit
In a power source of a welding system, an inverter rectifier output circuit and method for reducing the blocking voltages across saturable reactors associated with a rectifier coupled to a transformer winding in the inverter rectifier output circuit during both turn-on and turn-off transitions of the rectifier. At least a portion of a reverse recovery current associated with the rectifier is blocked by allowing blocking voltages to build across associated saturable reactors during a transition phase of the rectifier. During a turn-off portion of the transition phase, the blocking voltages are reduced using a RC circuit, thereby suppressing a peak voltage associated with the rectifier. During a turn-on portion of the transition phase, the blocking voltages are reduced using another saturable reactor in series with a free-wheeling diode. |
| US08742292B2 |
Robot controller that controls tandem arc welding system, arc tracking controlling method using the robot controller, and the tandem arc welding system
A robot controller that controls a tandem arc welding system according to the present invention includes a leading-electrode correcting section that calculates a leading-electrode correction amount, used for correcting a displacement in a left-right direction and an up-down direction, from a leading-electrode changing amount calculated by a leading-electrode processing section; a leading-electrode correcting section that calculates a trailed-electrode correction amount, used for correcting a displacement in a rotational direction, from a trailed-electrode changing amount calculated by a trailed-electrode processing section; a rotational-displacement correction controlling processing section that calculates a rotational-center correction amount for correcting the displacement of the leading electrode; and a robot trajectory planning processing section that corrects a teaching position and a position of a rotational center of a welding torch during tracking correction. By such a structure, even if arc tracking is carried out at any rotational center, displacement of the leading electrode does not occur, so that defective welding does not occur. |
| US08742291B2 |
Method of controlling arc welding in a tandem arc welding system
A method of controlling arc welding, which method shifting the speed of welding operation continuously and mildly. By so doing, a sharp change in the speed of weld wire supply, which is caused as the result of efforts to try to comply with an abrupt change in operation speed, can be moderated. This helps keeping a welding operation under a stable control. |
| US08742288B2 |
Laser apparatus for singulation, and a method of singulation
An apparatus 101 for singulating an object is disclosed. The apparatus 101 comprises a laser 103 configured to emit a laser beam 105 with a Gaussian irradiance profile, as well as a beam-shaping device 115 configured to reshape the Gaussian irradiance profile of the laser beam 105 emitted from the laser 103. In particular, the beam-shaping device 115 has a plurality of aspherical lenses 117, 119 to redistribute irradiance of the laser beam 105, so as to reduce variation of the irradiance in an effective irradiation spectrum of the laser beam 105 for singulating the object. By redistributing the irradiance of the laser beam 105, irradiation energy may be more efficiently delivered to the semiconductor wafer 102 for laser singulation, compared with conventional laser beams with Gaussian irradiance profiles which are non-uniform. A method of singulating an object is also disclosed. |
| US08742286B1 |
Apparatus and method for improving the intensity profile of a beam image used to process a substrate
Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam. |
| US08742271B2 |
Electric plug
A plug including a shell and a mounting body disposed inside the shell. The mounting body is provided with a first movable contact spring and a second movable contact spring, a phase contact and a zero contact, and a button assembly. A transverse block disposed above the first movable contact spring and the second movable contact spring includes a phase terminal and a zero terminal. The button assembly includes an electric magnet disposed on the mounting body and a sliding part having a cavity. The cavity of the sliding part is provided with a reset spring. A hook is disposed in a lower part of the cavity. The transverse block is connected with a pull block. An upper part of the pull block is connected with the electric magnet. The center of the pull block includes a limiting hole for accommodating the hook. |
| US08742270B2 |
Switch with locking mechanism
The present invention provides a switch that can prevent a locking member from being lost, that allows easy operations of handle locking and unlocking, and that allows more secure handle locking. A switch of the present invention includes a fixed contact point, a moving contact point capable of making contact with the fixed contact point, a handle to move the moving contact point, and a locking lever to lock the handle. The handle is equipped integrally with an overhang portion. The overhang portion is formed with a notched portion. The locking lever is equipped integrally with a projecting portion. The locking lever is pressed upwardly by a spring. When the handle is at a first position, an operation of the handle is locked by engaging the projecting portion to the notched portion. When the handle is at a second position opposite to the first position, an operation of the handle is allowed by letting the projecting portion abut on a lower surface of the overhang portion. |
| US08742268B2 |
Head part for an implantable medical device
An electrical bushing for use in a housing of an implantable medical device is proposed. The electrical bushing includes at least one electrically insulating base body and at least one electrical conducting element. The conducting element establishes, through the base body, at least one electrically conductive connection between an internal space of the housing and an external space. The conducting element is hermetically sealed with respect to the base body, at least in part. The at least one conducting element includes at least one cermet. The electrical bushing includes at least one head part. The head part includes at least one plug connector element that enables electrical connection of at least one plug element from the external space to the plug connector element. |
| US08742266B2 |
Hi-definition multimedia interface gasket with fingers
An electromagnetic gasket comprises a substantially rectangular sheet having a plurality of resilient fingers on an outer peripheral. The fingers are bent outward and at least four resilient prongs are bent inward to form a passageway that is sized and dimensioned to receive an HDMI connector. When the HDMI connector is inserted through the passageway, the resilient prongs are adapted to urge against top, bottom, and two side surfaces of the shell of the HDMI connector in such a manner to prevent the gasket from disengaging from the HDMI connector. The plurality of resilient fingers extend outward and beyond the top, bottom, and two side surfaces of the shell of the HDMI connector and are adapted to urge against a surface of a faceplate. The plurality of fingers and prongs of the gasket provide a direct grounding path between surfaces of the shell of the HDMI connector and surface of the faceplate. |
| US08742265B2 |
1-D tire patch apparatus and methodology
Disclosed is a tire mountable apparatus and method that includes a substrate defining a longitudinal direction, a top surface and a bottom surface. The substrate has a plurality of conductor terminals arranged in a substantially linear relationship. A first support element is located below the bottom surface of the substrate and a second support element is located above the top surface of the substrate. The plurality of conductor terminals are positioned between the first and second support elements. The substrate may be a piezoelectric device having a piezoelectric layer arranged between first and second conductive layers. The plurality of conductor terminals may be arranged in a substantially linear relationship along a line about 80° to about 100° to the longitudinal direction of the substrate, and the longitudinal direction of the substrate being substantially perpendicular to the direction of rotation of the tire. |
| US08742263B2 |
Anisotropically conductive member and method for producing the same
Provided is an anisotropically conductive member that has a dramatically increased density of disposed conductive paths, can be used as an electrically connecting member or inspection connector for electronic components such as semiconductor devices even today when still higher levels of integration have been achieved, and has excellent flexibility. The anisotropically conductive member includes an insulating base and a plurality of conductive paths made of a conductive material, insulated from one another, and extending through the insulating base in the thickness direction of the insulating base, one end of each of the conductive paths protruded on one side of the insulating base, the other end of each of the conductive paths exposed or protruded on the other side thereof. The insulating base is made of a resin material and the conductive paths are formed at a density of at least 1,000,000 conductive paths/mm2. |
| US08742254B2 |
Apparatus, method, and system for grounding support structures using an integrated grounding electrode
Disclosed herein are apparatus, methods, and systems for grounding outdoor light poles, as well as other structures, which may be exposed to lightning or other adverse electrical effects and may require a low impedance path to ground. Inventive aspects include a combination of apparatus integral to the pole or other structure and installation considerations whereby the ease of installation, reduction of onsite installation error, and reduction of impedance may be tailored to each installation. An apparatus can include a pre-installed earth grounding electrode at the lower end of the pole or structure to be inserted into the earth. A method can include installing an earth grounding electrode to/on/in a lower end of a pole or structure prior to insertion into the earth. |
| US08742251B2 |
Multi-segment photovoltaic power converter with a center portion
The invention provides a photovoltaic power converter that includes a plurality of spatially separated device segments supported by a substrate, wherein the device segments are arranged in a circular pattern wherein a first group of the device segments consisting of one or more of the device segments is centrally positioned and is surrounded by a second group of the device segments comprising at least two device segments and wherein two or more of the plurality of the device segments are connected in series for developing a voltage when radiation of selected wavelengths is incident on the device. |
| US08742249B2 |
Solar module structures and assembly methods for three-dimensional thin-film solar cells
Solar module structures 210 and 270 and methods for assembling solar module structures. The solar module structures 210 and 270 comprise three-dimensional thin-film solar cells 110 arranged in solar module structures 210 and 270. The three-dimensional thin-film solar cell comprises a three-dimensional thin-film solar cell substrate (124 and 122, respectively) with emitter junction regions 1352 and doped base regions 1360. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The 3-D TFSC substrate comprises a plurality of single-aperture or dual-aperture unit cells. The solar module structures 270 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of dual-aperture unit cells may be used in solar glass applications. The solar module structures 210 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of single-aperture unit cells may be used in building façade and rooftop installation applications as well as for centralized solar electricity generation. |
| US08742247B2 |
Solar cell module and method of manufacturing the same
A solar cell module includes a substrate, a lower electrode layer, a semiconductor layer and an upper electrode layer for an embodiment. The lower electrode layer may include a plurality of area-separating grooves separating the substrate into an active area and a peripheral area surrounding the active area, and a plurality of first cell-separating grooves formed in the active area. The semiconductor layer is formed on the lower electrode layer. The semiconductor layer includes a plurality of second cell-separating grooves that are spaced apart from the first cell-separating grooves. The upper electrode layer is formed on the semiconductor layer. The upper electrode layer includes a plurality of third cell-separating grooves that are spaced apart from the second separating grooves. |
| US08742245B2 |
Method and apparatus for using thermionic devices to recover energy from light sources and other energy conversion devices
A lamp having a light emitting diode, a Peltier device, a heat sink, a translucent, thermally conductive window, and an optical fluid. The Peltier device is in thermal communication with the light emitting diode and converts a waste thermal energy discharged by the light emitting diode into an electrical energy. Conductors transfer the electrical energy from the Peltier device to a boost circuit which converts a level of a voltage associated with the electrical energy output from the Peltier device to a higher, more useful value. The heat sink transfers a second thermal energy from the Peltier device. The optical fluid is located between the translucent, thermally conductive window and the light emitting diode. The optical fluid has an angle of diffraction having an intermediate value relative to an angle of diffraction associated with the light emitting diode and an angle of diffraction associated with the translucent, thermally conductive window. |
| US08742243B2 |
Method and apparatus for melody recognition
The present disclosure provides a method for recognition. The method includes inputting a melody and obtaining pitch tracking information of the melody; obtaining beat information of the melody; determining a clarity value according to the pitch tracking information; implementing a first comparison process first to filter a first set of candidate songs from a database and then implementing a second comparison process to filter a second set of candidate songs from the first set of candidate songs if the clarity value is larger than a predetermined threshold; and determining at least one final candidate song from the second set of candidate songs. |
| US08742241B2 |
Electronic keyboard instrument
An electronic keyboard instrument capable of suppressing warpage of a keybed having a keyboard placed thereon and improving the appearance of the instrument by shared use of a backboard covering an instrument body and a speaker box. A piano body of an electronic piano has a keybed. A bottom board is disposed below the keybed in a manner spaced therefrom and extends further rearward than a rear end thereof. A front board is erected on a front end of the bottom board and connected to the keybed. The speaker box accommodates a speaker. A screen board is erected rearward of the front board in the speaker box on the bottom board, and connected to the keybed. A backboard is connected to the rear end of the bottom board in a manner covering the rear sides of the piano body and the speaker box. |
| US08742239B1 |
Easy access flexible container and pick holder for stringed musical instrument picks
The present invention is a flexible container and pick holder for a musical instrument. The flexible container and pick holder has a plurality of thin slots on its face, in which can be placed musical instrument picks. The thin slots have a raised lip or ridge that keeps the pick at a small acute angle with respect to the face of the flexible container and pick holder. The material of the face of the flexible container and pick holder is such that the musician's thumb can easily swipe or move a guitar pick across it. The present invention can be positioned so that the musician can easily reach the face containing the picks using the thumb of the strumming hand. |
| US08742236B1 |
Maize variety hybrid X18C115
A novel maize variety designated X18C115 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X18C115 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X18C115 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X18C115, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X18C115. This invention further relates to methods for producing maize varieties derived from maize variety X18C115. |
| US08742235B1 |
Maize variety hybrid X08B735
A novel maize variety designated X08B735 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X08B735 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X08B735 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X08B735, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X08B735. This invention further relates to methods for producing maize varieties derived from maize variety X08B735. |
| US08742229B1 |
Inbred corn line XHA21BM
An inbred corn line, designated XHA21BM, the plants and seeds of the inbred corn line XHA21BM, methods for producing a corn plant, either inbred or hybrid, produced by crossing the inbred corn line XHA21BM with itself or with another corn plant, and hybrid corn seeds and plants produced by crossing the inbred line XHA21BM with another corn line or plant and to methods for producing a corn plant containing in its genetic material one or more transgenes and to the transgenic corn plants produced by that method. This invention also relates to inbred corn lines derived from inbred corn line XHA21BM, to methods for producing other inbred corn lines derived from inbred corn line XHA21BM and to the inbred corn lines derived by the use of those methods. |
| US08742227B1 |
Maize variety hybrid X05A912
A novel maize variety designated X05A912 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X05A912 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X05A912 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X05A912, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X05A912. This invention further relates to methods for producing maize varieties derived from maize variety X05A912. |
| US08742221B2 |
Soybean variety XB31AX12
A novel soybean variety, designated XB31AX12 is provided. Also provided are the seeds of soybean variety XB31AX12, cells from soybean variety XB31AX12, plants of soybean XB31AX12, and plant parts of soybean variety XB31AX12. Methods provided include producing a soybean plant by crossing soybean variety XB31AX12 with another soybean plant, methods for introgressing a transgenic trait, a mutant trait, and/or a native trait into soybean variety XB31AX12, methods for producing other soybean varieties or plant parts derived from soybean variety XB31AX12, and methods of characterizing soybean variety XB31AX12. Soybean seed, cells, plants, germplasm, breeding lines, varieties, and plant parts produced by these methods and/or derived from soybean variety XB31AX12 are further provided. |
| US08742214B2 |
Soybean cultivar S100289
A soybean cultivar designated S100289 is disclosed. The invention relates to the seeds of soybean cultivar S100289, to the plants of soybean cultivar S100289, to the plant parts of soybean cultivar S100289, and to methods for producing progeny of soybean cultivar S100289. The invention also relates to methods for producing a soybean plant containing in its genetic material one or more transgenes and to the transgenic soybean plants and plant parts produced by those methods. The invention also relates to soybean cultivars or breeding cultivars, and plant parts derived from soybean cultivar S100289. The invention also relates to methods for producing other soybean cultivars, lines, or plant parts derived from soybean cultivar S100289, and to the soybean plants, varieties, and their parts derived from use of those methods. The invention further relates to hybrid soybean seeds, plants, and plant parts produced by crossing cultivar S100289 with another soybean cultivar. |
| US08742208B2 |
Tetraploid watermelons producing small fruits
Tetraploid watermelon inbreds are disclosed. The invention relates to the seeds and plants of the tetraploid watermelon inbreds, the methods of propagating the tetraploid inbreds through seeds and tissue culture. The invention also relates to methods of producing the triploid seedless watermelon seeds and plants by crossing the tetraploid inbreds with diploid watermelon inbreds, and to the triploid plants produced therefrom. |
| US08742207B2 |
Disease resistant plants
The present invention relates to a plant, which is resistant to a pathogen of viral, bacterial, fungal or oomycete origin, wherein the plant has a reduced level, reduced activity or complete absence of DMR6 protein as compared to a plant that is not resistant to the said pathogen, in particular organisms of the Fungi or the phylum Oomycota. The invention further relates to a method for obtaining a plant, which is resistant to a pathogen of viral, bacterial, fungal or oomycete origin, comprising reducing the endogenous level or activity of DMR6 protein in the plant. In addition, the invention relates to the use of a DMR6 promotor for providing disease resistant plants. |
| US08742203B2 |
Chemically Inducible Expression of Biosynthetic Pathways
Methods and constructs for the introduction of multiple genes encoding enzymes in a multi-enzyme biosynthetic pathway are provided. In one embodiment, the constructs contain two or more enzyme-encoding genes, each under the control of an inducible promoter and each with a polyadenylation signal. The constructs are used to produce transgenic plants, in which the expression of the enzymes are increased when a chemical inducing agent is applied, and a biosynthetic product of the series of enzymes encoded by the transgenes is produced. Constructs may be used which contain two or more enzyme-encoding genes under the control of one or more promoters activated by activator molecules or complexes expressed from a transgene or transgenes, which are themselves under the control of one or more inducible promoters and switched on following the external application of a chemical. The transgene or transgenes expressing the activator molecules or complexes may be included in the same construct containing multiple genes encoding enzymes in a multi-enzyme biosynthetic pathway. Alternatively, the transgene or transgenes expressing the activator molecules or complexes may be on a different construct from the construct containing multiple genes encoding enzymes in a multi-enzyme biosynthetic pathway. The activator molecule can be expressed using a constitutive promoter in an inactive form which is converted to the active form following application of the chemical inducing agent. |
| US08742197B2 |
Methods and apparatus for applying adhesives in patterns to an advancing substrate
Methods and apparatuses herein may provide for the application of viscous fluids, such as adhesives, in pre-determined patterns to an advancing substrate. The fluid application apparatus may include a slot die applicator and a substrate carrier. The substrate carrier may include one or more pattern elements and may be adapted to advance the substrate past the slot die applicator as the slot die applicator discharges adhesive onto the substrate. In operation, the substrate is disposed on the substrate carrier; the substrate carrier advances the substrate past the slot opening of the slot die applicator. In turn, the substrate is intermittently compressed between the slot die applicator and the pattern surface of the pattern element. As the substrate is intermittently compressed, adhesive discharged from the slot die applicator is applied onto the substrate in an area having a shape substantially the same as a shape defined by the pattern surface. |
| US08742196B2 |
Precut adhesive body support articles and support system
The invention provides an adhesive support article for supporting a body part of a user. A single-sided stretchable adhesive tape blank is precut into a sheet having a central anchoring portion and a plurality of outwardly extending fingers. The sheet is marked with visual indicators to guide the user of the support article for applying the central anchoring portion onto a first exterior surface of the body part and for stretching the fingers before adhering them at a predetermined distance away from the central anchoring portion. The adhesive support article can also be provided in a support system with at least one corresponding body landmark article, providing further guidance for applying the support article to the desired body part. |
| US08742193B2 |
Process for oligomerization of light olefins using a catalyst based on an amorphous material with hierarchized and organized porosity
A process for oligomerization of an olefinic feedstock that contains olefinic hydrocarbon molecules that have 2 to 10 carbon atoms per molecule is described, whereby said process comprises bringing said feedstock into contact with a catalyst that comprises at least one amorphous material with hierarchized and organized porosity and consists of at least two elementary spherical particles, each of said particles comprising a mesostructured silicon-oxide-based matrix that has a mesopore diameter of between 1.5 and 30 nm and that exhibits amorphous and microporous walls with a thickness of between 1 and 50 nm, whereby said elementary spherical particles have a maximum diameter of 200 microns. |
| US08742192B2 |
Oligomerisation of olefins with zeolite catalyst
The conversion and run length for oligomerization of olefins over a molecular sieve catalyst in a tubular reactor is improved by controlling the peak temperature to not exceed 50 degrees C. above the temperature of the temperature control fluid exiting the shell side outlet of the reactor. A tubular reactor containing molecular sieve catalyst is provided with a multipoint thermocouple in at least one tube, and optionally with a bottom design adapted for fast unloading of the molecular sieve catalyst from the tubular reactor. |
| US08742191B2 |
Alkylation of aromatic substrates and transalkylation process
A process for transalkylation of polyalkylated aromatic components can include providing a transalkylation reaction zone containing a transalkylation catalyst. A feedstock can be introduced into an inlet of the transalkylation reaction zone and into contact with the transalkylation catalyst. The feedstock can include a polyalkylated aromatic component derived from an aromatic substrate. The aromatic substrate can be supplied to the transalkylation reaction zone. The transalkylation reaction zone can be operated at temperature and pressure conditions sufficient to cause disproportionation of the polyalkylated aromatic component to produce a disproportionation product having a reduced polyalkylated aromatic content and an enhanced monoalkylated aromatic content. The disproportionation product can be withdrawn from the transalkylation reaction zone. Amounts of nitrogen containing compounds in the aromatic substrate can be monitored in a range of from 15 to 35 wppm by dry colorimetry. |
| US08742190B2 |
Dilute ethylene alkylation of benzene
Methods of forming ethylbenzene are described herein. In one embodiment, the method includes contacting dilute ethylene with benzene in the presence of an alkylation catalyst to form ethylbenzene, wherein such contact occurs in a reaction zone containing a gaseous phase and recovering ethylbenzene from the reaction zone. |
| US08742180B1 |
Process control with Raman spectroscopy
Embodiments of the present disclosure include methods of effecting process control in a reaction system for the production of 1,4-butanediol, the method including determining at least one property of a sample from the reaction system using Raman spectroscopy, and adjusting at least one parameter of the reaction system in response to the at least one determined property. Embodiments may also include methods of producing 1,4-butanediol, the method including reacting allyl alcohol with carbon monoxide and hydrogen in the presence of a solvent and a catalyst to produce a reactor fluid, sampling the reaction, determining at least one property of the sample using Raman spectroscopy, and adjusting the reaction in response to the at least one determined property. |
| US08742177B2 |
Catalyst and process to produce branched unsaturated aldehydes
A continuous process and system for preparing branched aldehydes by reacting aldehyde with an acid polymeric catalyst absent any metal from Group VIII to produce a product having about 10 to 99.99% by weight branched unsaturated aldehyde and at least 92% selectivity of reaction to the branched aldehyde and recycling a portion of the product. |
| US08742174B2 |
Method for preparing higher ethanolamines
The present invention relates to a process for preparing ethanolamines by reacting glycolaldehyde with monoethanolamine and/or diethanolamine in the presence of a catalyst. |
| US08742172B2 |
Polymorphic forms of N-[4-(trifluoromethyl)benzyl]-4-methoxybutyramide
Crystalline polymorphic forms of a compound of formula N-[4-(trifluoromethyl)benzyl]-4-methoxybutyramide are described. The two polymorphic forms, named polymorphic Form A and polymorphic Form B, can be used in the treatment of drug addiction and alcoholism and have very good stability. Methods for preparing the polymorphic forms are also described. |
| US08742171B2 |
Process for preparing formic acid
A process for preparing formic acid by hydrogenation of carbon dioxide in the presence of a tertiary amine (I) and a catalyst at a pressure of from 0.2 to 30 MPa abs and a temperature of from 20 to 200° C., wherein the catalyst is a heterogeneous catalyst comprising gold. |
| US08742167B2 |
Therapeutic formulations based on asiatic acid and selected salts thereof
A highly pure asiaticoside and a pharmaceutical grade asiatic acid can be prepared, along with salts of asiatic acid, for use in formulating therapeutic compositions that are suitable for treating arthritis, psoriasis and other inflammatory diseases, as well as pulmonary fibrosis, diabetic nephropathy, and other fibrotic diseases. |
| US08742166B2 |
Preparation of polyisocyanates having isocyanurate groups and their use
The present invention relates to a novel process for preparing polyisocyanates having isocyanurate groups by a partial trimerization of (cyclo)aliphatic diisocyanates in the presence of at least one trimerization catalyst from the group of ammonium salts of lactames and to the use of the thus obtainable polyisocyanates having isocyanurate groups as a polyisocyanate component in polyurethane coatings. |
| US08742164B2 |
Method for producing toluenedicarbamate, method for producing toluenediisocyanate, and toluenedicarbamate
A method for producing toluenedicarbamate includes a carbamate production process of producing toluenedicarbamate by reaction between toluenediamine, urea, and/or N-unsubstituted carbamic acid ester, and alcohol; and a benzoyleneurea reduction process of reducing a disubstituted benzoyleneurea and a derivative thereof to 10 mol or less relative to 100 mol of toluenedicarbamate, wherein the disubstituted benzoyleneurea is represented by formula (1) below and has a methyl group and an amino group: |
| US08742159B2 |
Fluorinated compound and fluorinated polymer
To provide a fluorinated compound having an RF group with at most 6 carbon atoms, whereby a fluorinated polymer having a highly durable water/oil repellency can be produced, and an environmental load is little, and a fluorinated polymer having a highly durable water/oil repellency and presenting little environmental load, obtainable by polymerizing such a fluorinated compound. A fluorinated compound represented by the following formula (I) and its polymer: CH2═C(M)COOXPhCOO(CH2)mCrF2r+1 (I) (in the formula (I), M is a hydrogen atom, a methyl group or a halogen atom, X is CHR1CH2O or CH2CHR1O, R1 is a C1-4 linear or branched alkyl group or CH2OR2, R2 is a C1-4 linear or branched alkyl group, Ph is a phenylene group, m is an integer of from 1 to 4, and r is an integer of from 1 to 6). |
| US08742155B2 |
Preparation of organoxysilyl or siloxy-containing ethylnorbornene compound
When an organoxysilyl or siloxy-containing ethylnorbornene compound is prepared by hydrosilylation of 5-vinyl-2-norbornene with a hydrogen organoxysilane or siloxy compound in the presence of a platinum catalyst, hydrosilylation is conducted in the co-presence of an ammonium salt. The organoxysilyl or siloxy-containing ethylnorbornene compound is effectively prepared at high reactivity and selectivity. |
| US08742147B2 |
Process for improving the selectivity of an EO catalyst
The present invention relates to a process for improving the overall selectivity of an EO process for converting ethylene to ethylene oxide utilizing a highly selective EO silver catalyst containing a rhenium promoter wherein following normal operation a chloride strip of the chloride on the surface of the catalyst is conducted in order to remove a portion of the chlorides on the surface of the catalyst. The chloride strip involves the addition of certain saturated hydrocarbons to the feed. Following the chloride strip, the catalyst is optionally re-optimized. |
| US08742144B2 |
Hydroxymethylfurfural reduction methods and methods of producing furandimethanol
A method of reducing hydroxymethylfurfural (HMF) where a starting material containing HMF in a solvent comprising water is provided. H2 is provided into the reactor and the starting material is contacted with a catalyst containing at least one metal selected from Ni, Co, Cu, Pd, Pt, Ru, Ir, Re and Rh, at a temperature of less than or equal to 250° C. A method of hydrogenating HMF includes providing an aqueous solution containing HMF and fructose. H2 and a hydrogenation catalyst are provided. The HMF is selectively hydrogenated relative to the fructose at a temperature at or above 30° C. A method of producing tetrahydrofuran dimethanol (THFDM) includes providing a continuous flow reactor having first and second catalysts and providing a feed comprising HMF into the reactor. The feed is contacted with the first catalyst to produce furan dimethanol (FDM) which is contacted with the second catalyst to produce THFDM. |
| US08742143B2 |
Process for the preparation of prostaglandin analogues
A process for preparing a prostaglandin analogue comprising a step of converting a compound of formula (8′): to the prostaglandin analogue, wherein R3 represents hydrogen or a hydroxyl protecting group. |
| US08742142B2 |
Process for producing perfluorinated organic compounds
A process for producing a perfluorinated functional compound is disclosed, which comprises: A. converting an at least partially hydrogenated alcohol into an at least partially hydrogenated fluoroformate compound; B. reacting said at least partially hydrogenated fluoroformate compound with fluorine in the presence of at least one (per)haloolefin comprising at least one carbon-carbon double bond and having at least one fluorine or chlorine atom on either one of the carbon atoms of said double bond, to obtain a perfluorinated fluoroformate compound. |
| US08742141B2 |
Inhibition and treatment of prostate cancer metastasis
The present invention provides compounds and methods of inhibiting and treating metastatic prostate cancer. The compounds include MEK4 inhibitors. In another aspect the invention provides methods of identifying inhibitors of metastatic prostate cancer by screening for inhibitors of MEK4. |
| US08742140B2 |
Chiral intermediate, process for producing the same and its use in the manufacture of tolterodine, fesoterodine, or the active metabolite thereof
The compound of formula (I): is provided. It may be produced by subjecting a compound of formula (IV) to a reduction reaction wherein R represents hydrogen, straight or branched C1-C6 alkyl. This compound is a valuable intermediate which may be used in the synthesis of fesoterodine, tolterodine, its active metabolite, and related compounds. |
| US08742137B2 |
2-oxo-1, 3-dioxolane-4-carboxylic acid and derivatives thereof, their preparation and use
Proposed are 2-oxo-1,3-dioxolane-4-carboxylic acid and derivatives thereof, according to the following formula, in which R1 represents a negative charge, hydrogen or can be preferably Me or Et or a radical having a valency of 2 to 5, which is substituted with an amount of further 2-oxo-1,3-dioxolane-4-carboxyl groups equal to the radical valency minus 1, as well as a process for their preparation by means of carboxylation of the corresponding epoxides, a process for their transesterification and their use for the preparation of hydroxyurethanes and as end groups for the blocking of amines. |
| US08742136B2 |
Method for producing cyclic disulfonic acid ester
It is an object of the present invention to provide a commercially advantageous method for producing a cyclic disulfonic acid ester with high yield, the present invention discloses a method for producing a cyclic disulfonic acid ester represented by the general formula (3), which comprises reacting a silver alkanedisulfonate represented by the general formula (1) with a dihaloalkane represented by the general formula (2) in a nonpolar solvent. Wherein X1 and X2 are each independently a chlorine atom, a bromine atom or an iodine atom; and Y and Z are each independently a substituted or unsubstituted alkylene chain which may have a heteroatom in the chain. |
| US08742134B2 |
7-azoniabicyclo[2.2.1]heptane derivatives, methods of production, and pharmaceutical uses thereof
Muscarinic acetylcholine receptor antagonists and methods of using them for the treatment of muscarinic acetylcholine receptor-mediated diseases, such as pulmonary diseases, are provided. |
| US08742133B2 |
Triazole compounds that modulate HSP90 activity
The present invention relates to substituted triazole compounds and compositions comprising substituted triazole compounds. The invention further relates to methods of inhibiting the activity of Hsp90 in a subject in need thereof and methods for preventing or treating hyperproliferative disorders, such as cancer, in a subject in need thereof comprising administering to the subject a substituted triazole compound of the invention, or a composition comprising such a compound. |
| US08742124B2 |
Amide derivatives bearing a cyclopropylaminoacarbonyl substituent useful as cytokine inhibitors
The invention concerns a compound of the Formula (I), wherein Qa is heteroaryl and is substituted with halogeno; R1 and R2 are hydrogen; and Qb is phenyl or heteroaryl, and Qb may optionally bear 1 or 2 substituents selected from hydroxy, halogeno and (1-6C)alkyl, or a pharmaceutically-acceptable salt thereof; processes for their preparation, pharmaceutical compositions containing them and their use in the treatment of diseases or medical conditions mediated by cytokines. |
| US08742121B2 |
Process for the preparation of small molecule inhibitors of MDM2 and intermediates used therein
The invention relates to small molecules which function as inhibitors of the interaction between p53 and MDM2. The invention also relates to the use of these compounds for inhibiting cell growth, inducing cell death, inducing cell cycle arrest and/or sensitizing cells to additional agent(s). |
| US08742113B2 |
Furanone derivative
To provide a novel furanone derivative, and a medicine including the same. The furanone derivative is represented by the formula (I): wherein A represents —COOR1 or a hydrogen atom; R1 represents a hydrogen atom, an optionally substituted hydrocarbon group, or an optionally substituted heterocycle; R2 and R3 are the same or different and each independently represent a hydrogen atom, an optionally substituted hydrocarbon group, an optionally substituted phenyl group, an optionally substituted heterocycle, an optionally substituted heterocyclic fused ring, or an optionally substituted amino group; or alternatively, R2 and R3, taken together with the nitrogen atom to which they are attached, may form an optionally substituted heterocycle or an optionally substituted heterocyclic fused ring; and R4 represents a hydrogen atom or a halogen atom; with the proviso that when A represents —COOR1, R2 and R3 are not optionally substituted amino groups at the same time, and when A represents a hydrogen atom, R3 represents a hydrogen atom. |
| US08742110B2 |
Spiroxazolidinone compounds
Substituted spirocyclic amines of structural formula (I) are selective antagonists of the somatostatin subtype receptor 5 (SSTR5) and are useful for the treatment, control or prevention of disorders responsive to antagonism of SSTR5, such as Type 2 diabetes, insulin resistance, lipid disorders, obesity, atherosclerosis, Metabolic Syndrome, depression, and anxiety. |
| US08742107B1 |
Process for manufacturing bis(2-methoxyethyl)-2,3,6,7-tetracyano-1,4,5,8,9,10-hexazaanthracene
A process to manufacture substituted tetracyano-hexaazatricyclics with the substitutions occurring at the 9 and 10 hydrogens. The process begins with 2,3-dichloro-5,6-dicyanopyrazine, which is reacted to form the desired tetracyano-hexaazatricyclic. Different process embodiments enable different reaction paths to the desired tetracyano-hexaazatricyclic. Different tetracyano-hexaazatricyclic embodiments include bis(2-methoxyethyl)-2,3,6,7-tetracyano-1,4,5,8,9,10-hexazaanthracene and bis(2-methoxyethoxyethyl)-2,3,6,7-tetracyano-1,4,5,8,9,10-hexazaanthracene. |
| US08742103B2 |
Separation of triazine derivatives enantiomers using tartaric acid
The present invention relates to a new process of separation of triazine derivatives enantiomers involving tartaric acid. |
| US08742101B2 |
Purine nucleoside analogues for treating flaviviridae including hepatitis C
This invention is directed to a method for treating a host, especially a human, infected with hepatitis C, flavivirus and/or pestivirus, comprising administering to that host an effective amount of an anti-HCV biologically active pentofuranonucleoside where the pentofuranonucleoside base is an optionally substituted 2-azapurine. The optionally substituted pentofuranonucleoside, or a salt or prodrug thereof, may be administered alone or in combination with one or more optionally substituted pentofuranonucleosides or other anti-viral agents. |
| US08742098B2 |
Inhibitors of Bruton's tyrosine kinase
This application discloses compounds according to generic Formula I: wherein the variables are defined as described herein, and which inhibit Btk. The compounds disclosed herein are useful to modulate the activity of Btk and treat diseases associated with excessive Btk activity. The compounds are further useful to treat inflammatory and auto immune diseases associated with aberrant B-cell proliferation, such as rheumatoid arthritis. Also disclosed are compositions containing compounds of Formula I and at least one carrier, diluent or excipient. |
| US08742097B2 |
Triazole compounds I
The present invention is concerned with novel triazole compounds of formula (I) wherein A, X, Y, Z, R1, R2, and R3 are as described herein, as well as pharmaceutically acceptable salts and esters thereof. The active compounds of present invention have affinity and selectivity for the GABA A α5 receptor. Further the present invention is concerned with the manufacture of the compounds of formula (I), pharmaceutical compositions comprising them and their use as medicaments. |
| US08742096B2 |
Methods and compositions for preparing noribogaine from voacangine
Disclosed are methods and compositions for preparing and purifying the non-addictive alkaloid noribogaine. |
| US08742095B2 |
Method of producing a bran product
The present invention relates to a method of manufacturing a cereal bran product containing beta-glucan. According to the method, a plastic mass is formed from cereal bran by means of a thermo-mechanical treatment, and the mass is brought into contact with an enzyme that breaks up beta-glucan, with or without an enzyme that breaks up starch. After inactivating the enzyme, the bran is dried and, when so needed, ground. The cereal bran product manufactured according to the method has an essentially inextensible structure in a water environment. The product is suitable to be added to aqueous foodstuffs or to foodstuffs, the manufacture of which employs water. |
| US08742090B2 |
Property effecting and/or property exhibiting compositions for therapeutic and diagnostic uses
The present invention provides an array of compositions useful for effecting and/or exhibiting changes in biological functioning and processing within cells and in biological systems containing such cells. In effect, these compositions combine chemical modifications and/or ligand additions with biological functions. The chemical modifications and/or ligand additions provide additional characteristics to the compositions without interfering substantially with their biological function. Such additional characteristics include nuclease resistance, targeting specific cells or specific cell receptors localizing to specific sites within cells and augmenting interactions between the compositions and target cells of interest as well as decreasing such interactions when desired. Also provided by the present invention are processes and kits. |
| US08742088B2 |
Nucleic acids encoding antibodies or portions thereof comprising a heterologous T cell epitope and their use in modulating T cell responses
The present invention provides a nucleic acid which comprises a non-specific promoter and at least one sequence that encodes a polypeptide that has at least one heterologous T cell epitope therein but does not have any regulatory T cell epitopes. The polypeptide may be one chain of a heterodimer such as the heavy or light chain of an antibody molecule, the heterologous T cell epitope causing disruption of the heterodimer chain such that it cannot bind with the other chain of the heterodimer. The nucleic acid can be used to raise a T cell response against the at least one heterologous T cell epitope. |
| US08742085B2 |
Method for preparing a transgenic animal of simultaneous multiple-gene expression
A method for preparing a transgenic animal of simultaneous multiple-gene expression is provided. Additionally, a method for preparing a transgenic embryo, which introduces both phytase gene and human myxovirus resistant gene A into a target embryo, to obtain a transgenic embryo is provided. The transgenic animal of simultaneous multiple-gene expression can be achieved by transplanting the transgenic embryo into the body of a female target animal. A significant advantage of the foregoing methods, among many others, exists in that the simultaneous expression of multiple genes can be achieved in one transgenosis, which provides a convenient method for the preparation of combined-gene transferred animals. |
| US08742082B2 |
Compositions and methods for influencing satiety, lipid metabolism, and fat utilization
The invention provides (1) genes differentially expressed in animals administered fatty acid amides that affect one or more of food intake, satiety, lipid metabolism, and fat utilization and (2) compositions and methods relating to the use of the genes to identify new compounds that affect one or more of food intake, satiety, lipid metabolism, and fat utilization. |
| US08742081B2 |
Fluorescent GFP variant displaying highly increased fluorescence intensity without a spectral shift
The present invention relates to a nucleic acid molecule encoding a polypeptide having a fluorescence emission activity with a maximum emission at 505 to 515 nm, wherein said nucleic acid molecule is selected from the group consisting of (a) a nucleic acid molecule encoding a polypeptide having the amino acid sequence of SEQ ID NO: 2; (b) a nucleic acid molecule having the DNA sequence of SEQ ID NO: 1; (c) a nucleic acid molecule hybridizing under stringent conditions to the complementary strand of (i.) a nucleic acid molecule of (a), wherein said nucleic acid molecule of (c) encodes a polypeptide having at the position corresponding to position 146 of SEQ NO:2 a phenylalanine and at the position corresponding to position 203 of SEQ NO:2 a threonine; or (ii) a nucleic acid molecule of (b), wherein said nucleic acid molecule of (c) has at the positions corresponding to positions 438 to 440 of SEQ ID NO: 1 a nucleotide triplet selected from the group consisting of TTT and TTC; and at the positions corresponding to positions 609 to 611 of SEQ ID NO: 1 a nucleotide triplet selected from the group consisting of ACT, ACC, ACA, ACG; wherein the polypeptide encoded by the nucleic acid molecule of (c) has a fluorescence enhanced by at least the factor of 2.5 as compared to the polypeptide having the amino acid sequence of SEQ ID NO: 10; or (d) a nucleic acid molecule degenerate with respect to the nucleic acid molecule of (b). The present invention furthermore relates to a polypeptide encoded by the nucleic acid molecule of the invention, a vector and a host cell comprising the nucleic acid molecule of the invention, a method of producing said polypeptide, a fusion protein comprising the polypeptide of the invention and methods of detecting the presence and/or localization of a protein of interest and methods of detecting the activity of a promoter. |
| US08742078B2 |
Antibacterial 4,6-substituted 6′, 6″ and 1 modified aminoglycoside analogs
The present invention is directed to analogs of aminoglycoside compounds as well as their preparation and use as prophylactic or therapeutics against microbial infection. |
| US08742074B2 |
Optimized FC variants
A variant of a parent polypeptide including an Fc region, which variant exhibits increased binding to FcRn as compared to the parent polypeptide and includes at least one amino acid modification in the Fc region. |
| US08742070B2 |
Method for selecting a candidate drug compound
The disclosure relates to the field of candidate drug testing and drug development. Described are methods for providing a compound composed of at least one molecule attached via at least two linkages to a molecular scaffold, the method comprising providing a scaffold comprising at least a first and a second reactive group; providing at least one molecule able to react with the at least first and second reactive group; and contacting the scaffold with at least one molecule to form at least two linkages between the scaffold and the molecule in a coupling reaction, wherein the formation of a linkage accelerates the formation of a consecutive linkage. The coupling reaction may be performed in solution, such as an aqueous solution. Furthermore, described is a method for selecting a candidate drug compound comprising providing a library of the compounds and determining the binding of a target molecule to the compounds. |
| US08742068B2 |
Treatment and prevention of inflammatory diseases and autoimmune diseases
The present invention relates to the use of fragments of heat shock proteins for the treatment and/or prevention of autoimmune diseases such as arthritis or inflammatory diseases such as Inflammatory Bowel Diseases. Preferably bacterial and/or mammalian heat shock proteins belonging to the HSP70 families are used. |
| US08742066B2 |
Recycled butyl ionomers and recycling processes
The present invention relates to processes for recycling articles made from butyl ionomers and processes for producing recycled butyl ionomers. The invention further relates to composites comprising recycled butyl ionomers and fillers and articles made from recycled butyl ionomers. The invention also relates to uncured filled articles made from butyl ionomers having certain physical properties. Exemplary fillers include silica, carbon black, talc and clay, particularly onium substituted high aspect ratio nanoclays. |
| US08742061B2 |
Polyarylene sulfide film
It is aimed to provide a polyarylene sulfide film for an acoustic instrument vibrating plate excellent in heat resistance, molding processability, acoustic properties, and also heat moldability. Provided is a polyarylene sulfide film wherein the elongation at break in either a longitudinal direction or a width direction of the film is 100% or more and 250% or less, and the Young's modulus in either a longitudinal direction or a width direction of the film is 1.5 GPa or more and less than 4 GPa. |
| US08742060B2 |
Processes for producing hexamethylenediamine (HMD), adiponitrile (ADN), adipamide (ADM) and derivatives thereof
Processes for producing nitrogen containing compounds include producing hexamethylenediamine (HMD), adiponitrile (ADN), adipamide (ADM) and derivatives thereof from adipic acid (AA) obtained from fermentation broths containing diammonium adipate (DAA) or monoammonium adipate (MAA). |
| US08742058B2 |
Biaxially oriented polyester film and linear magnetic recording medium
A biaxially oriented polyester film has a ratio of Young's modulus in the transverse direction to Young's modulus in the machine direction of 1.5 to 3, an average value of refractive indices in the machine direction, in the transverse direction, and in the thickness direction of 1.590 to 1.680, a minor melting peak temperature of 160 to 190° C., and a coefficient of hygroscopic expansion in the transverse direction of 0 to 6 ppm/% RH. |
| US08742056B2 |
Solid resol-type phenolic resin and method of manufacturing the same
Disclosed is a solid resol-type phenolic resin having: methylol groups and dimethylene ether bonds, as functional groups bound to phenolic nuclei; a content of methylol group, per 1 mol of the phenolic nuclei, of 0.8 mol or more and 1.3 mol or less; a content of dimethylene ether bond, per 1 mol of the phenolic nuclei, of 0.1 mol or less; a weight-average molecular weight of a tetrahydrofuran-soluble fraction, measured by gel permeation chromatography (GPC), of 800 or larger and 4,000 or smaller; and a content of mononuclear phenolic compound of 10% by weight or less. |
| US08742054B2 |
Polyester-polyurethane hybrid resin molding compositions comprising polyurethane with units derived from aliphatic isocyanates
A hybrid resin composition is described, the composition comprising: A. An A part composition comprising an aliphatic polyfunctional isocyanate compound and a free radical polymerization initiator; and B. A B part composition comprising an ethylenically unsaturated, substantially water-free polyester polyol and a polyurethane catalyst. The A part composition can contain a non-interfering solvent, e.g., styrene, and the B part composition typically has an acid value of 5 or less (based on solids). For outdoor use, the B part composition is preferably free of tertiary hydrogens, ether glycols and terephthalic acid residues. |
| US08742053B2 |
Polyamide-polysiloxane compounds
The invention relates to novel polyamide-polysiloxane compounds, processes for their preparation, their use, precursors for their preparation and reactive compositions which contain the precursors. |
| US08742052B2 |
Polyurea compound
A polyurea compound obtainable by reacting one or more polyisocyanates with one or more non-chiral mono-amines (I) and one or more chiral mono-amines (II) and co-precipitating the reaction products to form the polyurea compound, wherein 2-98 mole % of the mono-amines in the polyurea compound are chiral mono-amines. The invention also relates to the use of said polyurea compound as a rheology modification agent, in particular as sag control agent (SCA) in coating compositions. The invention further relates to sag control agent compositions, coating compositions and coatings comprising the polyurea compound as sag control agent. |
| US08742051B2 |
Method of preparing a bodied siloxane resin including M, Q, and T-propyl units and capped with additional M units
A bodied siloxane resin comprises M, Q, and T-propyl units and is capped with additional M units. The bodied siloxane resin contains less silanol groups than the bodied siloxane resin before being capped with additional M units. |
| US08742047B2 |
Polymerizable ionic liquid comprising multifunctional cation and antistatic coatings
A multifunctional polymerizable ionic liquid is described comprising an anion and a cationic group having at least two ethylenically unsaturated polymerizable groups, each bonded to the cationic group via a divalent non-alkyl linking group. The multifunctional linking groups independently comprise a heteroatom such as oxygen or nitrogen. The linking groups may independently comprise one or more linkages such as an amide, urea, or ether linkage and more typically a urethane or ester linkage. The ethylenically unsaturated polymerizable groups are typically (meth)acrylate groups. Coatings and coated articles are also described. |
| US08742046B2 |
Maleimide copolymer, process for the production thereof, and heat resistant resin compositions containing same
Provided is a maleimide copolymer which exhibits an excellent hue, an effect of imparting high heat resistance, and excellent kneadability. Specifically provided is a maleimide copolymer which comprises 50 to 60 mass % of a styrene monomer unit, 30 to 50 mass % of a maleimide monomer unit, and 0 to 10 mass % of an unsaturated dicarboxylic anhydride monomer unit, and which has a weight-average molecular weight (Mw) of 90,000 to 130,000 and a residual maleimide monomer content of 300 ppm or lower. |
| US08742044B2 |
Method for producing polymer nanocomposite, and flame-retardant polymer nanocomposite formed by the production method
A method for producing a polymer nanocomposite, includes: after expanding an interlayer space of a layered inorganic compound using an organic onium salt, immobilizing a radical polymerization initiator having a group represented by formula (1) on an interlayer surface of the layered inorganic compound via a covalent bond; and carrying out surface-initiated radical polymerization in a monomer from the immobilized radical polymerization initiator. Preferably, in the radical polymerization initiator having the group represented by the general formula (1), at least one of X1 to X3 in the formula is a chlorine atom, or R1 in the formula is a C1-25 alkylene group or a C2-25 alkenylene group optionally interrupted by an oxygen atom or an ester group and optionally substituted by a phenyl group: R1 represents a C1-25 alkylene group, a C2-25 alkenylene group, a C5-8 cycloalkylene group, or a C6-12 arylene group. |
| US08742040B2 |
Solid titanium catalyst component, olefin polymerization catalyst, and olefin polymerization process
A solid titanium catalyst component (I) comprising titanium, magnesium, halogen, a specific cyclic ester compound (a) and a specific cyclic ester compound (b), an olefin polymerization catalyst containing this catalyst component (I), and an olefin polymerization process using this olefin polymerization catalyst are disclosed. According to the solid titanium catalyst component, the olefin polymerization catalyst and the process for preparing an olefin polymer of the invention, an olefin polymer having high stereoregularity and a wide molecular weight distribution can be prepared with high activity, preparation of an olefin polymer excellent not only in molding properties such as high-speed streatchability and high-speed moldability but also in rigidity becomes possible, and besides, production cost can be reduced. |
| US08742039B2 |
Methods for making polyolefins
A method for making a polyolefin composition according to one embodiment includes altering the concentration of the chain transfer agent present in the reactor to control the HMW and LMW fractions of the polyolefin composition. |
| US08742031B2 |
Solvent-soluble 6,6-polyimide copolymers and processes for preparing them
Heat-resistant polyimide copolymers having the following four components: pyromellitic dianhydride (PMDA), 1,4-diaminodiphenyl ether (DADE), biphenyltetracarboxylic dianhydride (BPDA), and 2,4-diaminotoluene (DAT) are provided. In an embodiment the molar ratio of (BPDA):(DADE):(PMDA):(DAT) is 2:2:m:m, in which m is an integer of 3, 4 or 5. |
| US08742028B2 |
Solid support for Fmoc-solid phase synthesis of peptide acids
The present invention provides a solid support for Fmoc-solid phase synthesis of peptides. In particular, the solid supports of the invention may be utilized to produce peptide acids. |
| US08742025B2 |
Adhesive composition and polarizing plate comprising the same
Disclosed are an adhesive composition and a polarizing plate including the same and, more particularly, an adhesive composition including a vinyl-acrylate copolymer including a hydroxyalkylvinylether monomer as a repeating unit, a cross-linking agent, ionic solid, and a silane coupling agent and, in addition, a polarizing plate including the same. Such adhesive composition may have desired re-workability without decrease in durability caused by surface transfer of an ionic compound, and allow effective gelling of adhesive fraction, to thereby considerably reduce a curing period. |
| US08742024B2 |
Mixture of surface postcrosslinked superabsorbers with different surface postcrosslinking
A mixture of superabsorbents having differing surface postcrosslinking, more particularly a mixture of differingly surface-postcrosslinked sieve cuts of a base polymer, exhibits improved absorption and retention over a unitarily surface-postcrosslinked superabsorbent. |
| US08742022B2 |
Coating compositions comprising non-ionic surfactant exhibiting reduced fingerprint visibility
Presently described are coating compositions comprising a polymerizable resin composition and a non-ionic unpolymerizable surfactant. In some embodiments, the coating comprises greater than 10 wt-% of non-ionic unpolymerizable surfactant. In other embodiments, the coating composition comprises an an additive comprising a silicone group or a fluorinated group and a hydrophobic group. Also described are articles comprising the cured coating compositions. In one embodiment, an article is described comprising a cured coating wherein the cured coating exhibits a property of an initially visible simulated fingerprint reducing in visibility in 1-20 minutes. Also described is a method of determining the fingerprint visibility of a coating composition and a polyacylate composition useful as an additive. In another embodiment a coated surface is described comprising a polymeric organic material comprising a plurality of pores wherein a portion of the pores are interconnected and comprise a lipophilic liquid. |
| US08742021B2 |
Ionomers with ionic groups in the side chain
Ionomers and ionomer membranes, consisting of a non-fluorinated or partly fluorinated non-, partly or fully-aromatic main chain and a non- or partly-fluorinated side chain with ionic groups or their non-ionic precursors, have a positive impact on the proton conductivity of the ionomers. Various processes produce these polymeric proton conductors. |
| US08742019B2 |
Crosslinked polyolefin polymer blends
Crosslinked polyolefin blends, methods for their production, and articles made of the same are provided. In at least one specific embodiment, the polyolefin blends comprise a first polymer formed in a first reactor and a second polymer formed in a second reactor. The first and second polymers, as well as the resulting blend, may comprise units derived from propylene, ethylene, and a diene. The blended composition can then be compounded with one or more coagents, antioxidants, and/or other additives and crosslinked, preferably by exposure to energetic photons. The crosslinked polymers are particularly useful for making fibers, films, and nonwovens. |
| US08742015B2 |
Thermoplastic resin composition and molded article
The objective of the present invention is to provide a thermoplastic resin composition having an excellent balance of chemical resistance, heat resistance and impact resistance and a molded article comprising this thermoplastic resin composition. The present thermoplastic resin composition comprises a rubber-reinforced resin, an ethylene•(meth)acrylic acid ester•carbon monoxide copolymer, and polytetrafluoroethylene, and contents of ethylene•(meth)acrylic acid ester•carbon monoxide copolymer and polytetrafluoroethylene are respectively from 0.5 to 20 parts by weight and from 0.01 to 5 parts by weight, with respect to 100 parts by weight of the rubber-reinforced resin. A modified polyolefin resin may be contained. |
| US08742011B2 |
Vehicle member and manufacturing method therefor
Disclosed is a vehicle member that includes a molded body and a protective film disposed on a surface of the molded body and formed by curing of an active energy ray-curing composition. The active energy ray-curing composition contains an active energy ray-curing prepolymer (A) obtainable by a reaction of an acrylic-based prepolymer having a hydroxyl group and an acrylic monomer (a4) having an isocyanate group, an active energy ray-curing compound (B) having a benzotriazole group, another active energy ray-curing compound (C) differing from the (A) component and the (B) component, and inorganic oxide particles (D). The acrylic-based prepolymer having the hydroxyl group is a copolymer that includes an acrylic monomer (a1) having a piperidinyl group, an acrylic monomer (a2) having a hydroxyl group, etc., as monomer units. |
| US08742010B2 |
Two-component waterborne polyurethane coatings
A polyaziridine introduced into a two-component waterborne polyurethane dispersion coating system increases the cure rate of a coating composition formed from the coating system. |
| US08742003B2 |
Silylated amino resins
The present invention relates to silylated amino resins, to processes for preparing them, to their use, and to coating compositions comprising them. |
| US08741999B2 |
Process for preparing a polymer dispersion and a polymer dispersion
The present invention relates to a process for preparing a polymer dispersion comprising polymerising one or more water soluble anionic monomers (m1) and one or more non-ionic vinyl monomers (m2) present in a reaction mixture further comprising a polymeric stabiliser (B) and a polymeric co-stabiliser (C). It further relates to a polymer dispersion, the use of the polymer dispersion and a process for producing paper. |
| US08741994B1 |
Alkoxysilyl group-containing azo compound and rubber composition using the same
An alkoxysilyl group-containing azo compound represented by the following formula (1), a method for easily obtaining the alkoxysilyl group-containing azo compound, and a rubber composition having improved heat build-up characteristic and the like obtained using the azo compound are provided. The alkoxysilyl group-containing azo compound is preferably obtained by reacting a compound represented by the following formula (2) and a compound represented by the following formula (3): HS—(CH2)m—Si(OR1)n(R2)3-n (3) wherein R1 and R2 represent an alkyl group having from 1 to 3 carbon atoms, R3 and R8 represent an alkylene group having from 1 to 3 carbon atoms, R4, R5, R6 and R7 represent hydrogen or an alkyl group having from 1 to 3 carbon atoms, n is an integer of from 1 to 3, and m is an integer of from 1 to 5. |
| US08741993B2 |
Polyolefin member and method of manufacturing
The invention concerns an improved process for producing high performance polyolefin member. The process comprises the steps of preparing a solution comprising a polyolefin and a solvent, extruding or spinning the solution into an air gap to form a fluid member, cooling the fluid member to form a solvent-containing gel member, and removing at least partly the solvent from the gel member to form a solid member before, during and/or after drawing the member. Furthermore, the process involves the presence of an antifoaming agent comprising an aryl sulphonic acid or an alkyl naphtyl sulphonic acid. The invention further concerns the geltruded polyolefin member comprising aryl sulphonic acid or alkyl naphtyl sulphonic acid. |
| US08741987B2 |
Polymer silica-reinforced masterbatch with nanomaterial
A polymer masterbatch in latex form having nanomaterials and a compatibilized silica for incorporation into natural and synthetic polymers in latex form using precipitated or fumed silica with at least two organosilicon coupling compounds attached to the silica in an aqueous suspension. |
| US08741983B2 |
Antifouling coating composition including a metal-containing copolymer, 4,5-dichloro-2-N-octyl-4-isothiazolin-3-one, and metal-pyrithione compound and using thereof
Antifouling coating compositions that do not substantially contain cuprous oxide and organotins, and that comprise: A) a metal-containing copolymer obtained by copolymerization of a polymerizable unsaturated monomer (a1) containing a metal and an unsaturated monomer (a2) capable of radical polymerization containing no metals; (B) 4,5-dichloro-2-n-octyl-4-isothiazolin-3-one; and (C) a metal pyrithione compound. |
| US08741979B2 |
Process for producing siloxane copolymers with urethane-sulphonamido linking groups
Readily emulsifyable silicone copolymers containing urethanesulfonamido linking groups are prepared by reacting a hydroxyl-functional organic polymer with a halo- or pseudohalo-sulfonyl isocyanate, and then reacting the halo- or pseudohalo-sulfonyl product with an organopolysiloxane bearing aminoalkyl groups, preferably in stoichiometric excess. |
| US08741972B2 |
Recycled polyethylene terephthalate compositions, fibers and articles produced therefrom, and methods for producing same
In one aspect, the invention relates to recycled polyethylene terephthalate compositions, fibers and articles produced therefrom, and methods for producing same. In a further aspect, the invention relates to homogenized post-consumer polyethylene terephthalate. In a further aspect, the invention relates to extruded polymer compositions, polymer mixtures, fibers, and/or Bulked Continuous Filament fibers comprising post-consumer polyethylene terephthalate. In a further aspect, the invention relates to processes for preparing recycled polyethylene terephthalate compositions. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention. |
| US08741970B2 |
Composition and method for the enhancement of the efficacy of drugs
The present invention relates to the enhancement of the efficacy of drugs, and more particularly, with overcoming the resistance of cells or organisms to drugs. In particular, the present invention provides a method for enhancing the effectiveness of a cytotoxic or anti-neoplastic agent, comprising the step of co-administering said agent with hyaluronan, wherein co-administration with hyaluronan enhances the agent's cancer cell-killing potential. |
| US08741968B2 |
Aqueous fungicidal composition and use thereof for combating harmful microorganisms
The invention relates to aqueous fungicidal active substance compositions and to their use in the control of harmful microorganisms and in particular in the protection of cellulose-comprising materials, particularly wood, from infection by microorganisms, in particular those harmful fungi which can damage wood or cellulose.The active substance composition according to the invention comprises: a) at least one fungicidal organic active substance with a solubility in water of not more than 5 g/l at 25° C./1013 mbar, and b) a finely-divided polymer with an average particle size, determined by dynamic light scattering, of not more than 300 nm, in which the polymer particles comprise the active substance, the polymer being formed from ethylenically unsaturated monomers M comprising: at least 60% by weight, based on the total amount of the monomers M, of at least one neutral monoethylenically unsaturated monomer M1 with a solubility in water of not more than 30 g/l at 25° C., and up to 40% by weight, based on the total amount of the monomers M, of one or more ethylenically unsaturated monomers M2 other than the monomers M1. |
| US08741966B2 |
Lipid compounds for use in cosmetic products, as food supplement or as a medicament
The present disclosure relates to lipid compounds of formula (I): wherein: R1 is chosen from a C10-C21 alkyl, a C10-C21 alkenyl having 1-6 double bonds, and a C10-C21 alkynyl having 1-6 triple bonds; R2 and R3 are the same or different and are chosen from hydrogen and a C1-C6 alkyl; X is chosen from O, S, SO, SO2, Si, and Se; n=1 or 3; and P1 is chosen from hydrogen; a C10-C21 alkyl, a C10-C21 alkenyl having 1-6 double bonds, a C10-C21 alkynyl having 1-6 triple bonds, optionally substituted; a group of formula (II) or formula (III), wherein P2, P3, and P4 are chosen from hydrogen, an alkyl, an alkenyl, and an alkynyl, optionally substituted; and a group of formula (IV) or formula (V), wherein P5 is chosen from hydrogen and a C1-C6 alkyl; or a pharmaceutically acceptable salt, complex, or solvate thereof. Also disclosed are pharmaceutical compositions and lipid compositions comprising such compounds, and methods of use thereof, for example in the treatment of diseases related to cardiovascular, metabolic, and inflammatory conditions. |
| US08741963B2 |
S1P receptor modulators for treating multiple sclerosis
The present invention relates to the use of the S1P receptor modulator 2-amino-2-[2-(4-octylphenyl)ethyl]propane-1,3-diol, administered at a daily dosage of 0.5 mg, for inhibiting or treating neo-angiogenesis associated with multiple sclerosis. |
| US08741962B2 |
Process for preparation of Rasagiline and salts thereof
The present invention relates to an improved process for the preparation of Rasagiline or pharmaceutically acceptable salts thereof. The present invention also relates to Rasagiline salts, polymorphs thereof and process for preparation thereof. |
| US08741961B2 |
Use of pargyline for the treatment of hair follicles
Use of Pargyline for the production of a medicament for influencing the metabolism of hair follicles and the modulation of their vital cycle. |
| US08741960B2 |
Substituted aromatic compounds for inflammation and immune-related uses
The invention relates to compounds of structural formula (I): or a pharmaceutically acceptable salt, solvate, clathrate, or prodrug thereof, wherein Y, L, A, W1, W2, and R′1 are defined herein. These compounds are useful as immunosuppressive agents and for treating and preventing inflammatory conditions, allergic disorders, and immune disorders. |
| US08741958B2 |
Synthetic spilanthol and use thereof
The present application provides a synthetic spilanthol flavor composition that includes (2E,6Z,8E)-N-(2-methylpropyl)-2,6,8-decatrienamide. The synthetic spilanthol composition can also contain, and at least one of (2E,6E,8E)-N-(2-methylpropyl)-2,6,8-decatrienamide and (2E,6Z,8Z)-N-(2-methylpropyl)-2,6,8-decatrienamide, the (N-(2-methylpropyl)-2,6,8-decatrienamide being present in amounts effective to impart a salivating or tingle effect while reducing the perception of off notes, as compared to the off-notes perceived upon consumption of natural spilanthol (e.g. spilanthol obtained from jambu oleoresin). Methods of increasing salivation and/or providing a tingling sensation upon consuming an orally consumable product that include adding to the product a synthetic spilanthol flavor composition are also provided. Synthetic spilanthol flavor compositions can be added to orally consumed products, such as, but not limited to, foods, beverages, pharmaceuticals, nutraceuticals, or therapeutic compositions, oral personal care products, gums (e.g. chewing gum or bubble gum), candy or lozenges. |
| US08741957B2 |
Alpha-aminoamide derivatives useful in the treatment of cognitive disorders
The present invention is in the field of pharmacotherapy of cognitive deficits in learning and memory by administering an α-aminoamide, particularly safinamide. Examples of disturbances in cognition that can be treated with compounds of the invention are the ones associated with disorders such as autism, dyslexia, attention deficit hyperactivity disorder, schizophrenia, obsessive compulsive disorders, psychosis, bipolar disorders, depression, Tourette's syndrome, Mild Cognitive Impairment (MCI) and disorders of learning in children, adolescents and adults, Age Associated Memory Impairment, Age Associated Cognitive Decline, Alzheimer's Disease, Parkinson's Disease, Down's Syndrome, traumatic brain injury Huntington's Disease, Progressive Supranuclear Palsy (PSP), HIV, stroke, vascular diseases, Pick's or Creutzfeldt-Jacob diseases, multiple sclerosis (MS), other white matter disorders and drug-induced cognitive worsening. |
| US08741956B2 |
Treatment of pain with topical diclofenac
The field involves compositions useful for pain relief, including diclofenac solution and gel formulations, in particular methods of use thereof, articles of manufacture and kits that provide novel preclinical, clinical and other information to users. |
| US08741955B2 |
D-serine transporter inhibitors as pharmaceutical compositions for the treatment of central nervous system disorders
The present invention relates to pharmaceutical compositions comprising D-serine transporter inhibitors and therapeutic methods using such pharmaceutical compositions in methods for the treatment of central nervous system disorders. |
| US08741954B2 |
Synergistic enhancement of calcium propionate
A novel composition comprised of a monocarboxylic fatty acid synergistically enhanced with a dual quaternary ammonium compound to provide immediate fungal and sporicidal destruction with long term residual resistance. |
| US08741949B2 |
Inhibitors of carnitin-palmitoyl-tranferase-1 for the treatment and prevention of disorders caused by delipidation of neural tissue
Carnitin-Palmitoyl-Transferase-1 (CPT-1) inhibitor for use in treating and/or preventing disorders caused by delipidation of neural tissue. |
| US08741945B2 |
Compounds
The present invention pertains generally to certain compounds of the deoxyactagardine A and B type. Such compounds are suitable for use in the treatment of microbial infections, for example Clostridium infection, such as C. perfringens, C. difficile, C. tetani, and/or C. botulinum, in particular C. difficile, especially infection of the colon and/or lower intestines and diarrhea associated with the microbial infection. |
| US08741944B2 |
Anti-infective agents against intracellular pathogens
A new class of phosphoinositide-dependent kinase-1 (PDK-1) inhibitors of Formula I: wherein X wherein X is —CF3, Ar is selected from and R is selected from where R′ is L-Lys, D-Lys, β-Ala, L-Lue, L-Ile, Phe, SO2CH2CH2NH2, SO2NH2, Asn, Glu or Gyl, and R″ is methyl, ethyl, allyl, CH2CH2OH, CH2CN, CH2CH2CN, CH2CONH2, |
| US08741943B2 |
Bicyclic compound, production and use thereof
The present invention provides a new cyclic compound having a CCR antagonist activity, especially a CCR5 antagonist activity, and the use thereof. The compound of the present invention is represented by the formula: wherein, R1 is a 5- to 6-membered ring group which may be substituted; X1 is a bond or the like; ring A is a 5- to 6-membered ring group which may be substituted; ring B is a 8- to 10-membered ring group which may be substituted; X2 is a bivalent group of 1 to 4 atoms; Z1 is a bivalent cyclic ring group or the like; Z2 is a bond or the like; and R2 is an amino group, a nitrogen-containing heterocyclic group which may be substituted or the like, or a salt thereof. |
| US08741940B2 |
Microbicidal composition
Synergistic microbicidal compositions containing N-(n-butyl)-1,2-benzisothiazolin-3-one or N-methyl-1,2-benzisothiazolin-3-one. |
| US08741939B2 |
Modulators of ATP-binding cassette transporters
The present invention relates to modulators of ATP-Binding Cassette (“ABC”) transporters or fragments thereof, including CF Transmembrane Regulator (“CFTR”), compositions thereof, and methods therewith. The present invention also relates to methods of treating ABC transporter mediated diseases using such modulators. |
| US08741938B2 |
Compounds that are useful for improving pharmacokinetics
Novel compounds of formula 1 or a pharmaceutically acceptable salt thereof inhibit cytochrome P450 monooxygenase. |
| US08741937B2 |
Gamma glutamyl transpeptidase inhibitors and methods of use
Compositions and methods for inhibiting human gamma-glutamyl transpeptidase (GGT) in vivo or in vitro and for inhibiting and killing neoplastic cancer cells, for example for the treatment, inhibition or prevention of tumors or malignant growths or other neoplasias in mammals, or sensitizing tumor to other therapies including radiation therapy. The GGT inhibitor compounds comprise a class of benzylthiadiazol benzenesulfoniamides. The compounds may also be used to treat a reversible airways obstruction in a mammal or a disease associated with reverse airways obstruction such as asthma, chronic obstructive pulmonary disease (COPD), allergic reaction, respiratory tract infection or upper respiratory tract disease. Other diseases or conditions which may be treated include, for example, degenerative diseases, renal diseases, liver diseases, cardiovascular disease and inner ear conditions or diseases. |
| US08741930B2 |
Treating xerophthalmia with norketotifen
Methods of using a cycloheptathiophene compound for the treatment of xerophthalmia are described, as are formulations and compositions for such treatment. |
| US08741929B2 |
Methods using 3-(4-amino-1-oxo-1,3-dihydro-isoindol-2-yl)-piperidine-2,6-dione for treatment of mantle cell lymphomas
Methods of treating, preventing or managing mantle cell lymphomas are disclosed. The methods encompass the administration of an immunomodulatory compound of the invention known as Revlimid® or lenalidomide. The invention further relates to methods of treatment using this compound with chemotherapy, radiation therapy, hormonal therapy, biological therapy or immunotherapy. Pharmaceutical compositions and single unit dosage forms suitable for use in the methods of the invention are also disclosed. |
| US08741927B2 |
Production method of intermediate compound for synthesizing medicament
The present invention relates to a novel method for preparing a compound of formula (2) as the intermediate, which can be effectively used for preparation of a compound of formula (1) exhibiting good inhibitory activity against dipeptidyl peptidase IV enzyme. |
| US08741926B2 |
Macrocyclic inhibitors of hepatitis C virus
Inhibitors of HCV replication of formula (I) and the N-oxides, salts, and stereoisomers, wherein each dashed line represents an optional double bond; X is N, CH and where X bears a double bond it is C; R1 is —OR7, —NH—SO2R8; R2 is hydrogen, and where X is C or CH, R2 may also be C1-6alkyl; R3 is hydrogen, C1-6alkyl, C1-6alkoxyC1-6alkyl, C3-7cycloalkyl; R4 is aryl or Het; n is 3, 4, 5, or 6; R5 is halo, C1-6alkyl, hydroxy, C1-6alkoxy, phenyl, or Het; R6 is C1-6alkoxy, or dimethylamino; R7 is hydrogen; aryl; Het; C3-7cycloalkyl optionally substituted with C1-6alkyl; or C1-6alkyl optionally substituted with C3-7cycloalkyl, aryl or with Het; R8 is aryl; Het; C3-7cycloalkyl optionally substituted with C1-6alkyl; or C1-6alkyl optionally substituted with C3-7cycloalkyl, aryl or with Het; aryl is phenyl optionally substituted with one, two or three substituents; Het is a 5 or 6 membered saturated, partially unsaturated or completely unsaturated heterocyclic ring containing 1 to 4 heteroatoms selected from nitrogen, oxygen and sulfur, and being optionally substituted with one, two or three substituents; pharmaceutical compositions containing compounds (I) and processes for preparing compounds (I). Bioavailable combinations of the inhibitors of HCV of formula (I) with ritonavir are also provided. |
| US08741922B2 |
Solid forms of N-(4-(7-azabicyclo[2.2,1]heptan-7-yl)-2-trifluoromethyl)phenyl)-4-oxo-5-(trifluoromethyl)-1,4-dihydroquinoline-3-carboxamide
The present invention relates to substantially crystalline and solid state forms of N-(4-(7-azabicyclo[2.2.1]heptan-7-yl)-2-(trifluoromethyl)phenyl)-4-oxo-5-(trifluoromethyl)-1,4-dihydroquinoline-3-carboxamide (Form A-HCl, Form B, Form B-HCl, or any combination of these forms), pharmaceutical compositions thereof, and methods of treatment therewith. |
| US08741920B2 |
Process for the manufacture of pharmaceutically active compounds
The present invention relates to a composition comprising the compound of formula (1), and the compound of formula (B), |
| US08741917B2 |
Benzo [C] phenanthridines as antimicrobial agents
The present invention provides compounds of formula I: formula (I) wherein X1-X4 and R1-R12 have any of the values defined in the specification, as well as salts and prodrugs thereof, which inhibit major molecular mechanisms associated with bacterial cell division and proliferation so as to be useful for the treatment and/or prevention of bacterial infections. The invention also provides compositions comprising these compounds as well as methods for using these compounds to inhibit bacterial cell division and proliferation and to treat bacterial infections. |
| US08741904B2 |
Polymorphous forms of rifaximin, processes for their production and use thereof in the medicinal preparations
Crystalline polymorphous forms of the rifaximin (INN) antibiotic named rifaximin δ and rifaximin ε useful in the production of medicinal preparations containing rifaximin for oral and topical use and obtained by means of a crystallization process carried out by hot-dissolving the raw rifaximin in ethyl alcohol and by causing the crystallization of the product by addition of water at a determinate temperature and for a determinate period of time, followed by a drying carried out under controlled conditions until reaching a settled water content in the end product, are the object of the invention. |
| US08741897B2 |
Glucocorticoid mimetics, methods of making them, pharmaceutical compositions and uses thereof
Compounds of Formula (IA), (IB), (IC), and (ID) wherein R1, R2, R3, R4, R5, and R6 are as respectively defined herein for Formula (IA), (IB), (IC), and (ID), or a tautomer, prodrug, solvate, or salt thereof; pharmaceutical compositions containing such compounds, and methods of modulating the glucocorticoid receptor function and methods of treating disease-states or conditions mediated by the glucocorticoid receptor function or characterized by inflammatory, allergic, or proliferative processes in a patient using these compounds. |
| US08741893B2 |
6,7-dihydro-[1,3,4]thiadiazolo-[3,2-a][1,3]diazepin derivatives and pharmaceutical compositions containing the same as hypnotic or anesthetic agent and method for their preparation
The present invention relates to a compound represented by formula 1 or an addition salt thereof, a pharmaceutical composition containing the compound, a method for its preparation as well as the use of the compound as an hypnotic agent or anesthetic agent: wherein each symbol is as defined in the Specification. |
| US08741890B2 |
Substituted amides, manufacturing and use thereof as medicaments
The present invention relates to new substituted prolinamides of general formula (I) wherein D, Y, A, B, R3, R4 and R5 are defined as in the specification, the tautomers, the enantiomers, the diastereomers, the mixtures thereof and the salts thereof, particularly the physiologically acceptable salts thereof with inorganic or organic acids or bases, which have valuable properties. |
| US08741885B1 |
Gastric retentive extended release pharmaceutical compositions
The present disclosure provides extended release pharmaceutical compositions comprising an opioid and an additional active pharmaceutical ingredient, wherein the composition exhibits gastric retentive properties which are achieved by a combination of a physical property of the composition and release of the opioid, wherein upon administration to a subject, the composition has at least one pharmacokinetic parameter that differs by less than about 30% when the subject is in a fasted state as compared to a fed state. |
| US08741880B2 |
Antiglucocorticoid therapy for the prevention of neurological damage in premature infants
This invention pertains to the discovery that agents which inhibit the binding of cortisol to its receptors can be used in methods for preventing neurological damage associated with glucocorticoid therapy in ventilator-dependent low birth weight preterm infants. Mifepristone, a potent glucocorticoid receptor antagonist, can be used in these methods. |
| US08741876B2 |
Therapeutic agent for ulcerative colitis
A method for treating a patient having ulcerative colitis, by administering a drug which containing an effective amount of tetracyclines is provided. The drug may also contain penicillins and/or metronidazoles. |
| US08741873B2 |
Controls and kit for thrombocyte activity tests
The present invention is in the field of coagulation diagnostics and relates to a kit and method for preparing controls for use in test methods for determining thrombocyte function. |
| US08741868B2 |
Pharmaceutical composition including an HIF-2 alpha inhibitor as an active ingredient for preventing or treating arthritis
The present invention relates to a pharmaceutical composition for preventing or treating arthritis, including, as an active ingredient, a material which inhibits the expression of the hypoxia-inducible factor-2α (HIF-2α) gene or the activity of the HIF-2α protein. According to the present invention, the HIF-2α of the present invention increases the expression thereof in chondrocytes or tissue in which osteoarthritis is induced, and triggers the expression of various cartilage degeneration factors and the activation of mitogen-activated protein (MAP) kinase. In addition, when HIF-2α is inhibited, the expression level of cartilage degeneration factors and the phosphorylation of MAP kinase are significantly reduced by the inhibited degree of HIF-2α. Thus, the composition of the present invention may be applied to the prevention or treatment of arthritis, and may be used for the development of therapeutics for arthritis. |
| US08741867B2 |
Retinoid-liposomes for treating fibrosis
What is described are pharmaceutical compositions comprising a double-stranded nucleic acid molecule comprising a sense strand and an antisense strand wherein the sense and antisense strands are selected from the oligonucleotides described as SERPINH1_2 (SEQ ID NOS: 60 and 127), SERPINH1_45a (SEQ ID NOS: 98 and 165), and SERPINH1_51 (SEQ ID NOS: 101 and 168), and drug carrier comprising a mixture of a retinoid and a lipid vesicle, and methods of using these pharmaceutical compositions to treat a disease associated with hsp47 expression, including fibrosis. |
| US08741865B2 |
Treatment of immune disorders with Hom-1 inhibitors
Disclosed are methods for treating immune disorders using inhibitors of Hom-1. The inhibitors include an RNAi agent containing the sequence of SEQ ID NO: 6. |
| US08741864B2 |
Gene expression and pain
The present invention relates to double-stranded oligonucleotides, pharmaceutical compositions thereof, and use of such double-stranded oligonucleotides and pharmaceutical compositions to modulate nociceptive signaling in a cell or prevent and/or treat pain in a patient. |
| US08741862B2 |
PHD2 inhibition for blood vessel normalization, and uses thereof
A key function of blood vessels, to supply oxygen, is impaired in tumors because of abnormalities in their endothelial lining. PHD proteins serve as oxygen sensors and may regulate oxygen delivery. Therefore the role of endothelial PHD2 in vessel shaping by implanting tumors in PHD2+/− mice was studied. Haplodeficiency of PHD2 did not affect tumor vessel density or lumen size, but normalized the endothelial lining and vessel maturation. This resulted in improved tumor perfusion and oxygenation, and inhibited tumor cell invasion, intravasation and metastasis. Haplodeficiency of PHD2 redirected the specification of endothelial tip cells to a more quiescent phenotype of a filopodia-lacking “phalanx” cell type. Without being bound to a particular mechanism, this transition could at least in part be explained by upregulation of (soluble) VEGFR-1 and VE-cadherin. Thus, decreased activity of an oxygen sensor in hypoxic conditions prompts endothelial cells to readjust their shape and phenotype to restore oxygen supply. Inhibiting PHD2 may offer alternative therapeutic opportunities for anti-cancer therapy, or other therapies where vascular normalization is beneficial. |
| US08741860B2 |
Modulation of T cell signaling threshold and T cell sensitivity to antigens
MicroRNAs (miRNAs) are a diverse and abundant class of ˜22-nucleotide (nt) endogenous regulatory RNAs that play a variety of roles in animal cells by controlling gene expression at the posttranscriptional level. Increased miR-181a expression in mature T cells is shown to cause a marked increase in T cell activation and augments T cell sensitivity to peptide antigens. Moreover, T cell blasts with higher miR-181a expression become reactive to antagonists. The effects of miR-181a on antigen discrimination are in part achieved by dampening the expression of multiple negative regulators in the T cell receptor (TCR) signaling pathway, including PTPN22 and the dual specificity phosphatases DUSP5 and DUSP6. This results in a reduction in the TCR signaling threshold, thus quantitatively and qualitatively enhancing T cell sensitivity to antigens. |
| US08741856B2 |
Avermectins and milbemycins for the treatment, prevention or amelioration of flavivirus infections
Avermectin and milbemycin compounds, particularly the substance ivermectin, for preparing an antiviral medicament for the treatment, prevention or amelioration of a Flavivirus infection, such as those caused by YFV (yellow fever virus), DENV (Dengue virus), JEV (Japanese encephalitis virus), TBEV (tick-borne encephalitis virus) or MODV (Modoc virus) are provided. The antiviral compositions of the present invention are suitable for oral administration to a Flavivirus-infected subject or a subject at risk of a infection, such as a human or other mammal. |
| US08741855B2 |
Anti-biofilm compositions and methods for using
The present invention provides polyphenolic compositions derived from a plant that inhibit the formation of a biofilm. Also provided are combinations that comprise at least one phenolic phytochemical and at least one antimicrobial agent that inhibit the growth of an established biofilm. Further, the present invention provides methods for inhibiting the formation and growth of biofilms. |
| US08741853B2 |
Mitochondria-targeting antioxidant therapeutics
The instant invention constitutes an unique subject matter as a whole which has four individual aspects: (1) a class of chiral, non-racemic, synthetic carnitinoid analog carrier molecules which constitute biocompatible transport compounds not found in nature; (2) a subsequently formed, mitochondria-targeting, coupled antioxidant-carrier complex comprising an antioxidant reversibly attached to and releasable from the synthetic carrier molecule; (3) a method for introducing a biologically active antioxidant into the interior of mitochondria of a living cell for subsequent reaction with such reactive oxygen species may then be present; and (4) a system for delivering a biologically active antioxidant to the interior of mitochondria within a living cell. |
| US08741849B2 |
Kinase inhibitors and uses thereof
The present invention relates to kinase inhibiting compositions and uses thereof. The invention further provides isolated kinase inhibiting peptides and uses thereof for inhibiting hyperplasia, for inhibiting the growth of neoplasms, and for inducing programmed cell death in a cell population. |
| US08741842B2 |
Chimeric natriuretic polypeptides with unique pharmacologic profiles
This document provides natriuretic polypeptides. For example, this document provides polypeptides having a natriuretic activity. In some cases, a polypeptide provided herein can have natriuretic activities without inducing excessive hypotension. This document also provides methods and materials for inducing natriuretic activities within a mammal. |
| US08741841B2 |
Fibroblast growth factor 21 proteins
This present invention relates to pharmacologically potent and stable human fibroblast growth factor 21 (FGF21) proteins, pharmaceutical compositions comprising FGF21 proteins, and methods for treating type 2 diabetes, obesity, dyslipidemia, and/or metabolic syndrome using such proteins. |
| US08741840B2 |
BMP-7 for use in treating neointimal hyperplasia
The present invention relates to prevention and treatment of vascular sclerosis, vascular calcification (VC) and neointimal hyperplasia using a morphogen. |
| US08741839B2 |
Polypeptides targeting vascular endothelial growth factor receptor-2 and αvβ3 integrin
Polypeptides comprising variant vascular endothelial growth factor sequences are provided. The polypeptides are useful in cancer imaging, cancer diagnosis, monitoring and treatment as well as treatment of diseases characterized by excessive neovascularization. |
| US08741830B2 |
Method for producing liquid preparations having a solid body content
A method for producing a liquid preparation having a solid body content and the resulting liquid preparation. According to the method, the addition of at least a portion of the solid bodies takes place only (a) in the last stage of the method preceding the pouring of the liquid preparation into a packing unit or (b) during the pouring into a packing unit. |
| US08741829B2 |
Azeotrope-like compositions of tetrafluoropropene and hydrofluorocarbons
Provided are azeotrope-like compositions comprising tetrafluoropropene and hydrofluorocarbons and uses thereof, including use in refrigerant compositions, refrigeration systems, blowing agent compositions, and aerosol propellants. |
| US08741828B2 |
Azeotrope and azeotrope-like compositions useful for the production of haloolefins
The present invention pertains to ternary azeotrope and azeotrope-like composition including 2-chloro-3,3,3-trifluoropropene (HCFO-1233xf), HF, and either 1,1,2,3-tetrachloropropene (TCP) or 1,1,1,2,2-pentafluoropropane (HFC-245cb). The present invention also relates to binary azeotropes of 2,3,3,3-tetrachloropropene and HF. Such azeotropic and azeotrope-like compositions are useful as intermediates in the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf). |
| US08741823B2 |
Grease composition
There is provided a grease composition, in which a grease film on the surface of the applied part is made thicker compared with conventional grease compositions, this thickness is maintained for a long period of time, and as a result, a longer service life against seizure compared with conventional grease compositions is assured. The grease composition comprises a base oil and a thickener, wherein the thickener is a diurea compound obtained by allowing an amine mixture comprising alkylphenylamine, an alkyl group of which has 8 to 16 carbon atoms, and cyclohexylamine, to react with a diisocyanate compound, and an amount of cyclohexylamine in the total amount of the alkylphenylamine and cyclohexylamine is from 91 to 99% by mole. |
| US08741820B2 |
Lubrication kit and small electronic device using the same
[Object] To provide a lubrication kit which is capable of improving wear resistance and durability of a sliding portion mounted in a small electronic device and which is capable of reducing a sound generated during driving.[Solution] A lubrication kit used for a small electronic device having a sliding portion, according to the present invention comprises at least one lubricant selected from a lubricant (1) comprising an anti-wear agent and a base oil which contains a polyol ester oil and/or a paraffinic hydrocarbon oil and a lubricant (2) comprising an anti-wear agent, polytetrafluoroethylene particles, and a base oil which contains a polyol ester oil and/or a paraffinic hydrocarbon oil, and a surface-treating agent obtained from a fluorine type surfactant and a phosphoric ester having a hydrocarbon group in which a part or all of hydrogen atoms have been substituted with a fluorine atom. |
| US08741818B2 |
Lost circulation compositions and associated methods
An embodiment includes a method of servicing a well bore. The method may comprise introducing a lost circulation composition into a lost circulation zone, the lost circulation composition comprising hydraulic cement, nano-particles, amorphous silica, clay, and water. The method further may comprise allowing the lost circulation composition to set in the lost circulation zone. Another embodiment includes a lost circulation composition. The lost circulation may comprise hydraulic cement, nano-particles, amorphous silica, clay, and water. |
| US08741816B2 |
Compositions and methods for treatment of well bore tar
Of the many compositions and methods provided herein, one method includes a method comprising: contacting tar resident in a well bore with a tar stabilizing polymer comprising at least one polymer selected from the group consisting of a styrene polymer, an acrylate polymer, a styrene-acrylate polymer, and any combination thereof; and allowing the tar stabilizing polymer to interact with the tar to at least partially reduce the tendency of the tar to adhere to a surface. |
| US08741814B2 |
T cell receptor display
A proteinaceous particle, for example a bacteriophage, ribosome or cell, displaying on its surface a T-cell receptor (TCR). The displayed TCR is preferably a heterodimer having a non-native disulfide bond between constant domain residues. Such display particles may be used for the creation of diverse TCR libraries for the identification of high affinity TCRs. Several high affinities are disclosed. |
| US08741812B2 |
Class of sterol ligands and their uses in regulation of cholesterol and gene expression
This invention relates to novel physiological oxysteroids and oxysteroid hormones which are C27 modified sterols, particularly derivatives of intermediates in cholesterol synthesis, including lanosterol, zymosterol and desmosterol, including C27 diol and C27 acid derivatives, as well as related compounds and analogs thereof. The invention relates to treatment of cholesterol-related conditions by modulating the rate of cholesterol synthesis or cholesterol metabolism by administration of the oxysteroids, analogs or antagonists thereof. Methods are provided for ameliorating, treating or preventing macular degeneration by administering an agent which stimulates the expression or activity of steroid sulphotransferase (SLUT2), particularly SLUT2B1b, or which stimulates the expression or activity of CYP27A1 or sterol 27-hydroxylase. Assays for identification of analogs, antagonists or modulators of the oxysteroids or of sterol 27-hydroxylase are provided. |
| US08741808B2 |
Methods to produce polymer nanoparticles and formulations of active ingredients
The present invention provides a composition including a polymer nanoparticle and at least one agricultural active compound incorporated with the nanoparticle, wherein the nanoparticle are less than 100 nm in diameter, and the polymer includes a polyelectrolyte. |
| US08741807B2 |
Plant activator
A compound useful as a plant activator for activating an endogenous defense system of a plant to control disease damage is provided. A compound represented by the formula: (R3)NH—(CH2)4—N(R1)—(CH2)3—NH(R2) (one of R1 and R2 represents a linear C6-18 alkanoyl group or alkenoyl group, the other represents hydrogen atom or a protective group of amino group; and R3 represents hydrogen atom or a protective group of amino group). |
| US08741805B2 |
Enhanced nitrification inhibitor composition
The present invention relates to an improved nitrification inhibitor composition and its use in agricultural applications. |
| US08741804B2 |
Microcapsules adapted to rupture in a magnetic field
Controlled release of one or more agricultural chemicals is provided by microcapsules adapted to rupture in a magnetic field. The microcapsules, which may be applied to soil, seeds and/or plants, each have a shell that encapsulates an agricultural chemical, such as a fertilizer, herbicide or insecticide. One or more organosilane-coated magnetic nanoparticles is/are covalently bound into the shell of each microcapsule. For example, (3-aminopropyl) trimethylsilane-coated magnetite nanoparticles may be incorporated into the shell of a urea-formaldehyde (UF) microcapsule during in situ polymerization. In one embodiment, microcapsules encapsulating a fertilizer are applied during seed planting. Controlled release is subsequently triggered after an appropriate period of dormancy by positioning a magnetic field generating device proximate the microcapsules to generate a magnetic field sufficient to rupture the microcapsule shells through magnetic stimulation of the organosilane-coated magnetic nanoparticles. The ruptured microcapsule shells release the fertilizer. |
| US08741799B2 |
Exhaust gas-purifying catalyst
An exhaust gas-purifying catalyst includes a substrate, and a catalytic layer facing the substrate and including a precious metal, alumina, an oxygen storage material, and a sulfate of an alkaline-earth metal having an average particle diameter falling within a range of 0.01 to 0.70 μm, the average particle diameter being obtained by observation using a scanning electron microscope. Another exhaust gas-purifying catalyst includes a substrate, and a catalytic layer formed on the substrate using slurry containing a precious metal, alumina, an oxygen storage material, and a sulfate of an alkaline-earth metal having an average particle diameter falling within a range of 0.01 to 0.70 μm, the average particle diameter being obtained by observation using a scanning electron microscope. |
| US08741795B2 |
Optical glass
An optical glass having high-refractivity and low-dispersion properties and containing, by mol %, 0.1 to 40% of SiO2, 10 to 50% of B2O3, wherein the mass ratio of the content of SiO2 to the content of B2O3, SiO2/B2O3, is 1 or less, 0.5 to 22% of ZnO, 5 to 50% of La2O3, and optionally other ingredients. The optical glass has a refractive index nd of 1.86 to 1.95 and an Abbe's number νd of (2.36−nd)/0.014 or more but less than 38, and a glass transition temperature of equal to or greater than 640° C. |
| US08741793B2 |
Vitreous material with visual effects and its applications
The present invention relates to a vitreous material possessing visual effects, particularly of fluorescence, when it is lit by ultraviolet light in the visible spectrum. These glasses are particularly applicable to the manufacture of decorative objects. |
| US08741787B2 |
Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment
A silicon-based low-k dielectric material is formed on the basis of a single precursor material, such as OMTCS, without incorporating a porogen species. To this end, the initial deposition of the low-k dielectric material may be formed on the basis of a reduced process temperature, while a subsequent treatment, such as a UV treatment, may allow the adjustment of the final material characteristics without causing undue out-gassing of volatile organic components. |
| US08741784B2 |
Process for fabricating semiconductor device and method of fabricating metal oxide semiconductor device
A process for fabricating a semiconductor device is described. A silicon oxide layer is formed. A nitridation process including at least two steps is performed to nitridate the silicon oxide layer into a silicon oxynitride (SiON) layer. The nitridation process comprises a first nitridation step and a second nitridation step in sequence, wherein the first nitridation step and the second nitridation step are different in the setting of at least one parameter. |
| US08741776B2 |
Patterning process for fin-like field effect transistor (finFET) device
A method for patterning a plurality of features in a non-rectangular pattern on an integrated circuit device includes providing a substrate including a surface with a first layer and a second layer. Forming a plurality of elongated protrusions in a third layer above the first and second layers. Forming a first patterned layer over the plurality of elongated protrusions. The plurality of elongated protrusions are etched to form a first pattern of the elongated protrusions, the first pattern including at least one inside corner. Forming a second patterned layer over the first pattern of elongated protrusions and forming a third patterned layer over the first pattern of elongated protrusions. The plurality of elongated protrusions are etched using the second and third patterned layers to form a second pattern of the elongated protrusions, the second pattern including at least one inside corner. |
| US08741774B2 |
Method for producing an electrical feedthrough in a substrate, and a substrate having an electrical feedthrough
A method for producing an electrical feedthrough in a substrate includes: forming a first printed conductor on a first side of a substrate which electrically connects a first contact area of the substrate on the first side; forming a second printed conductor on a second side of a substrate which electrically connects a second contact area of the substrate on the second side; forming an annular trench in the substrate, a substrate punch being formed which extends from the first contact area to the second contact area; and selectively depositing an electrically conductive layer on an inner surface of the annular trench, the substrate punch being coated with an electrically conductive layer and remaining electrically insulated from the surrounding substrate due to the annular trench. |
| US08741773B2 |
Nickel-silicide formation with differential Pt composition
Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers over at least one of a gate, a source, and a drain region of a field-effect-transistor (FET) through a physical vapor deposition (PVD) process, wherein the first metal layer is deposited using a first nickel target material containing platinum (Pt), and the second metal layer is deposited on top of the first metal layer using a second nickel target material containing no or less platinum than that in the first nickel target material; and annealing the first and second metal layers covering the FET to form a platinum-containing nickel-silicide layer at a top surface of the gate, source, and drain regions. |
| US08741772B2 |
In-situ nitride initiation layer for RRAM metal oxide switching material
A resistive memory device having an in-situ nitride initiation layer is disclosed. The nitride initiation layer is formed above the first electrode, and the metal oxide switching layer is formed above the nitride initiation layer to prevent oxidation of the first electrode. The nitride initiation layer may be a metal nitride layer that is formed by atomic layer deposition in the same chamber in which the metal oxide switching layer is formed. The nitride initiation layer and metal oxide switching layer may alternatively be formed in a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber. |
| US08741769B2 |
Semiconductor device having a copper plug
Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. There may also be a cap layer over the copper plug to protect it from oxidation. There may also be a dielectric layer over the cap layer. |
| US08741768B2 |
Method for reducing dielectric overetch when making contact to conductive features
A method is provided that includes forming conductive or semiconductive features above a first dielectric material, depositing a second dielectric material above the conductive or semiconductive features, etching a void in the second dielectric material, wherein the etch stops on the first dielectric material, and exposing a portion of the conductive or semiconductive features. Numerous other aspects are provided. |
| US08741766B2 |
Semiconductor device and method of confining conductive bump material during reflow with solder mask patch
A semiconductor device has a semiconductor die with die bump pads and substrate with trace lines having integrated bump pads. A solder mask patch is formed interstitially between the die bump pads or integrated bump pads. The solder mask patch contains non-wettable material. Conductive bump material is deposited over the integrated bump pads or die bump pads. The semiconductor die is mounted over the substrate so that the conductive bump material is disposed between the die bump pads and integrated bump pads. The bump material is reflowed without a solder mask around the integrated bump pads to form an interconnect between the semiconductor die and substrate. The solder mask patch confines the conductive bump material within a footprint of the die bump pads or integrated bump pads during reflow. The interconnect can have a non-fusible base and fusible cap. |
| US08741763B2 |
Layout designs with via routing structures
An approach for providing layout designs with via routing structures is disclosed. Embodiments include: providing a gate structure and a diffusion contact on a substrate; providing a gate contact on the gate structure; providing a metal routing structure that does not overlie a portion of the gate contact, the diffusion contact, or a combination thereof; and providing a via routing structure over the portion and under a part of the metal routing structure to couple the gate contact, the diffusion contact, or a combination thereof to the metal routing structure. |
| US08741760B2 |
Method of manufacturing semiconductor device including first conductive pattern and second conductive pattern having top surface which decreases in height
A semiconductor device has a semiconductor substrate, a plurality of first conductive patterns, a second conductive pattern having a top surface of which stepwisely or gradually decreases in height in a direction from a side facing the first conductive pattern toward an opposite side, a first insulation film formed over the plurality of first conductive patterns and the second conductive pattern, and a third conductive pattern formed over the first insulation film. |
| US08741759B2 |
Method for fabricating a semiconductor device
A method for fabricating a semiconductor device is disclosed. The method includes forming a gate stack over a substrate, forming spacers adjoining opposite sidewalls of the gate stack, forming a sacrificial layer adjoining the spacers, removing a portion of the sacrificial layer, removing a portion of the spacers to form a recess cavity below the left spacers. Then, a strain feature is formed in the recess cavity. The disclosed method provides an improved method by providing a space between the spacer and the substrate for forming the strained feature, therefor, to enhance carrier mobility and upgrade the device performance. |
| US08741757B2 |
Replacement gate electrode with multi-thickness conductive metallic nitride layers
Gate electrodes having different work functions can be provided by providing conductive metallic nitride layers having different thicknesses in a replacement gate scheme. Upon removal of disposable gate structures and formation of a gate dielectric layer, at least one incremental thickness conductive metallic nitride layer is added within some gate cavities, while not being added in some other gate cavities. A minimum thickness conductive metallic nitride layer is subsequently added as a contiguous layer. Conductive metallic nitride layers thus formed have different thicknesses across different gate cavities. A gate fill conductive material layer is deposited, and planarization is performed to provide multiple gate electrode having different conductive metallic nitride layer thicknesses. The different thicknesses of the conductive metallic nitride layers can provide different work functions having a range of about 400 mV. |
| US08741756B2 |
Contacts-first self-aligned carbon nanotube transistor with gate-all-around
A method of fabricating a semiconducting device is disclosed. A carbon nanotube is deposited on a substrate of the semiconducting device. A first contact on the substrate over the carbon nanotube. A second contact on the substrate over the carbon nanotube, wherein the second contact is separated from the first contact by a gap. A portion of the substrate in the gap between the first contact and the second contact is removed. |
| US08741755B2 |
Semiconductor device having gate trench and manufacturing method thereof
Disclosed herein is a semiconductor device that includes a trench formed across active regions and the element isolation regions. A conductive film is formed at a lower portion of the trench, and a cap insulating film is formed at an upper portion of the trench. The cap insulating film has substantially the same planer shape as that of the conductive film. |
| US08741751B2 |
Double contacts for carbon nanotubes thin film devices
A method of fabricating a semiconductor device is disclosed. A first contact layer of the semiconductor device is fabricated. An electrical connection is formed between a carbon nanotube and the first contact layer by electrically coupling of the carbon nanotube and a second contact layer. The first contact layer and second contact layer may be electrically coupled. |
| US08741750B2 |
Method for fabricating a semiconductor having a graded pn junction
A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors. |
| US08741742B2 |
Method of fabricating an integrated circuit without ground contact pad
The disclosure relates to a method of fabricating an integrated circuit of CMOS technology in a semiconductor wafer comprising scribe lines. According to the disclosure, a ground contact pad of the integrated circuit is made in a scribe line of the wafer and is destroyed during a step of individualizing the integrated circuit by singulation of the wafer. A ground contact of the integrated circuit is made on the back side of the integrated circuit when it is assembled in an interconnection package. |
| US08741741B2 |
Method for designing SOI wafer and method for manufacturing SOI wafer
A method for manufacturing an SOI wafer that has an SOI layer formed on a buried insulator layer and is suitable for photolithography with an exposure light having a wavelength λ comprises: designing a thickness of the buried insulator layer of the SOI wafer on the basis of the wavelength λ of the exposure light utilized for the photolithography that is to be performed on the SOI wafer after manufacturing; and fabricating the SOI wafer that has the SOI layer formed on the buried insulator layer having the designed thickness. As a result, there is provided a method for designing an SOI wafer and a method for manufacturing an SOI wafer that enable the variation in the reflection rate of the exposure light due to the variation in the SOI layer thickness and hence variation in the exposure state of a resist to be inhibited in a photolithography operation. |
| US08741737B2 |
Three-dimensional wafer stacking with vertical interconnects
Described are three-dimensional stacked semiconductor structures having one or more vertical interconnects. Vertical stacking relies on vertical interconnects and wafer bonding using a patternable polymer. The polymer is preferably lithographically patternable and photosensitive. Curing of the polymer is preselected from about 35% to up to about 100%, depending on a desired outcome. When fabricated, such vertically stacked structures include electrical interconnects provided by solder reflow. Solder reflow temperature is bounded by a curing and glass transition temperatures of a polymer used for bonding. |
| US08741735B1 |
Method of forming a semiconductor memory device
A semiconductor memory device includes a semiconductor substrate defining active regions partitioned by an isolation region, conductive lines spaced apart from each other and crossing the active regions over the semiconductor substrate, a thin film pattern formed on a top portion of the conductive lines having opening portions exposing part of the conductive lines in a width wider than a width of the conductive lines, an insulating layer filling the opening portions and formed over the thin film pattern, and an air gap formed between the conductive lines below the insulating layer and the thin film pattern. |
| US08741733B2 |
Stress in trigate devices using complimentary gate fill materials
Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device. |
| US08741732B2 |
Forming metal-insulator-metal capacitors over a top metal layer
A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer. |
| US08741727B2 |
Method of manufacturing semiconductor device capable of reducing a size of the semiconductor device
A method of manufacturing a semiconductor device includes forming a flash memory cell in a first region, forming a first electrode of a capacitor in a second region, forming a first silicon oxide film, a silicon nitride film, and a second silicon oxide film in this order as a second insulating film, removing the silicon nitride film and the second silicon oxide film in a partial region of the first electrode, wet-etching a first insulating film and the second insulating film in the third region, forming a second electrode of the capacitor, and etching and removing the first silicon oxide film in the partial region. |
| US08741725B2 |
Butted SOI junction isolation structures and devices and method of fabrication
A structure, a FET, a method of making the structure and of making the FET. The structure including: a silicon layer on a buried oxide (BOX) layer of a silicon-on-insulator substrate; a trench in the silicon layer extending from a top surface of the silicon layer into the silicon layer, the trench not extending to the BOX layer, a doped region in the silicon layer between and abutting the BOX layer and a bottom of the trench, the first doped region doped to a first dopant concentration; a first epitaxial layer, doped to a second dopant concentration, in a bottom of the trench; a second epitaxial layer, doped to a third dopant concentration, on the first epitaxial layer in the trench; and wherein the third dopant concentration is greater than the first and second dopant concentrations and the first dopant concentration is greater than the second dopant concentration. |
| US08741721B2 |
Semiconductor device and manufacturing method thereof
A semiconductor device and manufacturing method thereof capable of improving an operating speed of a MOSFET using an inexpensive structure. The method comprises the steps of forming a stress film to cover a source, drain, sidewall insulating layer and gate of the MOSFET and forming in the stress film a slit extending from the stress film surface toward the sidewall insulating layer. As a result, an effect of allowing local stress components in the stress films on the source and the drain to be relaxed by local stress components in the stress film on the gate is suppressed by the slit. |
| US08741720B2 |
Penetrating implant for forming a semiconductor device
A semiconductor device and method to form a semiconductor device is described. The semiconductor includes a gate stack disposed on a substrate. Tip regions are disposed in the substrate on either side of the gate stack. Halo regions are disposed in the substrate adjacent the tip regions. A threshold voltage implant region is disposed in the substrate directly below the gate stack. The concentration of dopant impurity atoms of a particular conductivity type is approximately the same in both the threshold voltage implant region as in the halo regions. The method includes a dopant impurity implant technique having sufficient strength to penetrate a gate stack. |
| US08741718B2 |
Local interconnects compatible with replacement gate structures
After forming replacement gate structures that are embedded in a planarized dielectric layer on a semiconductor substrate, a contact-level dielectric layer is deposited over a planar surface of the planarized dielectric layer and the replacement gate structures. Substrate contact via holes are formed through the contact-level dielectric layer and the planarized dielectric layer, and metal semiconductor alloy portions are formed on exposed semiconductor materials. Gate contact via holes are subsequently formed through the contact-level dielectric layer. The substrate contact via holes and the gate contact via holes are simultaneously filled with a conductive material to form substrate contact structures and gate contact structures. The substrate contact structures and gate contact structures can be employed to provide local interconnect structures that provide electrical connections between two components that are laterally spaced on the semiconductor substrate. |
| US08741717B2 |
Methods for fabricating integrated circuits having improved metal gate structures
Methods for fabricating integrated circuits are provided. One method includes forming first and second FET trenches in an interlayer dielectric material on a semiconductor substrate. The first FET trench is partially filled with a first work function metal to define an inner cavity in the first FET trench. The first work function metal is a N-type work function metal or a P-type work function metal. The N-type work function metal is selected from the group consisting of titanium, tantalum, hafnium, ytterbium silicide, erbium silicide, and titanium silicide. The P-type work function metal is selected from the group consisting of cobalt, nickel, and tungsten silicide. The inner cavity and the second FET trench are filled with a second work function metal to form corresponding metal gate structures. The second work function metal is the other of the N-type work function metal or the P-type work function metal. |
| US08741711B2 |
Manufacturing method of a MOS transistor using a sidewall spacer
A method of manufacturing a semiconductor device which includes forming first and second gate patterns, forming first and second sidewall spacers on sidewalls of the first and second gate patterns respectively, implanting a first impurity into the semiconductor substrate, forming a third sidewall spacer on the first sidewall spacer and a fourth sidewall spacer on the second sidewall spacer in such a manner that the third sidewall spacer is in contact with the fourth sidewall spacer between the first and second gate patterns, implanting a second impurity into the semiconductor substrate, and removing the third and the fourth sidewall spacers. |
| US08741707B2 |
Method and system for fabricating edge termination structures in GaN materials
A method for fabricating an edge termination, which can be used in conjunction with GaN-based materials, includes providing a substrate of a first conductivity type. The substrate has a first surface and a second surface. The method also includes forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The substrate, the first GaN epitaxial layer and the second GaN epitaxial layer can be referred to as an epitaxial structure. |
| US08741706B2 |
High electron mobility transistor and method of manufacturing the same
A high electron mobility transistor (HEMT) includes a substrate, an HEMT stack spaced apart from the substrate, and a pseudo-insulation layer (PIL) disposed between the substrate and the HEMT stack. The PIL layer includes at least two materials having different phases. The PIL layer defines an empty space that is wider at an intermediate portion than at an entrance of the empty space. |
| US08741704B2 |
Metal oxide semiconductor (MOS) device with locally thickened gate oxide
A method of fabricating a semiconductor device including providing a gate structure on a channel portion of a semiconductor substrate, wherein the gate structure includes at least one gate dielectric on the channel portion of the semiconductor substrate and at least one gate conductor on the at least one gate dielectric. An edge portion of the at least one gate dielectric is removed on each side of the gate structure, wherein the removing of the edge portion of the gate dielectric provides an exposed base edge of the at least one gate conductor and an exposed channel surface of the semiconductor substrate underlying the gate structure. The sidewall of the gate structure is oxidized, which also oxidizes at least one of the exposed base edge of the at least one gate conductor and the exposed channel surface of the semiconductor substrate that is underlying the gate structure. |
| US08741701B2 |
Fin structure formation including partial spacer removal
A method of forming a semiconductor device includes forming a mandrel on top of a substrate; forming a first spacer adjacent to the mandrel on top of the substrate; forming a cut mask over the first spacer and the mandrel, such that the first spacer is partially exposed by the cut mask; partially removing the partially exposed first spacer; and etching the substrate to form a fin structure corresponding to the partially removed first spacer in the substrate. |
| US08741697B2 |
Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer. An antifuse component can include a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer. The second electrode of the antifuse component can be coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor. In an embodiment, the antifuse component can be in the form of a transistor structure. The electronic device can be formed using a single polysilicon process. |
| US08741695B2 |
Semiconductor device and method of manufacturing the same
A semiconductor device includes a metal substrate including a metal base plate, an insulating sheet located on the metal base plate, and a wiring pattern located on the insulating sheet, and a semiconductor element located on the metal substrate. The semiconductor element is sealed with a molding resin. The molding resin extends to side surfaces of the metal substrate. On the side surfaces of the metal substrate, the insulating sheet and the wiring pattern are not exposed from the molding resin, whereas the metal base plate includes a projecting portion exposed from the molding resin. |
| US08741687B2 |
Photovoltaic device with crystalline layer
A method for manufacturing a multilayered structure may include forming a transparent conductive oxide layer including cadmium stannate adjacent to a substrate and annealing the structure in an annealing environment including a reducing agent at a temperature greater than 500 degrees C. to crystallize the cadmium stannate. |
| US08741686B2 |
Semiconductor device
A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type. |
| US08741683B2 |
Chip package and fabrication method thereof
An embodiment of the invention provides a chip package, which includes: a semiconductor substrate having a device region; a package layer disposed on the semiconductor substrate; a spacing layer disposed between the semiconductor substrate and the package layer and surrounding the device region; and an auxiliary pattern having a hollow pattern formed in the spacing layer, a material pattern located between the spacing layer and the device region, or combinations thereof. |
| US08741682B2 |
Microstructure, micromachine, and manufacturing method of microstructure and micromachine
Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other. |
| US08741681B2 |
Solid-state image pickup device and method for producing the same
A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region. |
| US08741669B2 |
Method for the production of an organic light emitting illuminant
In a method for producing an organic light emitting illuminant, a base electrode layer is formed over a substrate, an organic light emitting layer is formed over at least one portion of the base electrode layer, and a top electrode layer is formed over at least one portion of the organic light emitting layer, the layers being formed in the shape of strips. The strip-shaped formation of the layers is carried out in a coating process in an in-line vacuum coating system having stationary shadowing masks on the advancing substrate such that at least one area of the base electrode layer remains uncoated once the layers have been formed. |
| US08741661B2 |
Methods and devices for sampling flowable materials
A method including: a) providing a first well with a first layer of a first flowable material and a second layer of a second flowable material, and a second well with a first layer of a first flowable material different from the first flowable material of the first well, b) locating the flowable material inlet within the first layer, c) sampling a first volume of the first flowable material, d) displacing the flowable material inlet relative to the first well to locate the flowable material inlet within the second layer, e) sampling a second volume of the second flowable material, f) displacing the flowable material inlet relative to the first and second wells to locate the flowable material inlet within the first layer of the second well, and g) sampling or dispensing into the second well a third volume of the first flowable material of the second well. |
| US08741659B2 |
Composition for measuring the binding affinity between nucleic acid and test substance, and use thereof
In one embodiment of the present invention, a composition is disclosed for measuring a binding affinity between a nucleic acid and a test substance, which contains an organic fluorescent substance capable of binding to an RNA and which emits fluorescence having an intensity greater while the organic fluorescent substance is liberated from an RNA than while the organic fluorescent substance is bound to an RNA. This enables a highly accurate and easy measurement of a binding affinity between a test substance and a nucleic acid, and allows various substances to be examined as a test substance. |
| US08741654B2 |
Compositions and methods for improved protein production
The present invention relates to the identification of novel nucleic acid sequences, designated herein as 7p, 8k, 7E, 9G, 8Q and 203, in a host cell which effect protein production. The present invention also provides host cells having a mutation or deletion of part or all of the gene encoding 7p, 8k, 7E, 9G, 8Q and 203, which are presented in FIG. 1, and are SEQ ID NOS.: 1-6, respectively. The present invention also provides host cells further comprising a nucleic acid encoding a desired heterologous protein such as an enzyme. |
| US08741653B2 |
Single recombination system and methods of use
The present invention is directed to a modified poxvirus vector that allows for the generation of recombinant poxviruses by a single recombination event. A modified poxvirus vector comprising at least one reporter gene located between two flanking sequences for homologous recombination is disclosed. Furthermore, a host cell comprising said vector and a method for the generation of recombinant poxviruses using said vector are provided. |
| US08741651B2 |
Chimeric isoprenoid synthases and uses thereof
Provided is a chimeric isoprenoid synthase polypeptide including a first domain from a first isoprenoid synthase joined to a second domain from a second, heterologous, isoprenoid synthase, whereby the chimeric isoprenoid synthase is capable of catalyzing the production of isoprenoid reaction products that are not produced in the absence of the second domain of the second, heterologous, isoprenoid synthase. Also provided is a chimeric isoprenoid synthase polypeptide including an asymmetrically positioned heterologous domain, whereby the chimeric isoprenoid synthase is capable of catalyzing the production of isoprenoid reaction products that are not produced when the domain is positioned at its naturally-occurring site in the isoprenoid synthase polypeptide. |
| US08741650B2 |
Methods for producing minus-strand RNA viral vectors using hybrid promoter comprising cytomegalovirus enhancer and chicken β-actin promoter
The present invention provides methods for producing a minus-strand RNA viral vector, which comprise using a promoter comprising a cytomegalovirus enhancer and a chicken β-actin promoter, to induce the transcription of the genome RNA of a minus-strand RNA viral vector and the expression of minus-strand RNA viral proteins that form a ribonucleoprotein with the genome RNA. The methods of the present invention enable high efficiency production of highly safe minus-strand RNA viral vectors. The methods of the present invention are particularly useful for producing minus-strand RNA viral vectors that are deficient in envelope-constituting protein genes. |
| US08741643B2 |
Differentiation of pluripotent stem cells to definitive endoderm lineage
The present invention provides methods to promote the differentiation of pluripotent stem cells. In particular, the present invention provides an improved method for the formation of pancreatic endoderm, pancreatic hormone expressing cells and pancreatic hormone secreting cells. The present invention also provides methods to promote the differentiation of pluripotent stem cells without the use of a feeder cell layer. |
| US08741642B2 |
Methods for producing autologous immune cells resistant to myeloid-derived suppressor cells effects
Methods for the ex vivo generation of cells of the innate (NKT cells and NK cells) and adaptive (T cells) immune systems for use in adoptive cell transfer (ACT) are provided. The NKT cells render T cells resistant to immune suppression (e.g. they are resistant to the effects of myeloid-derived suppressor cells (MDSCs)). The method involves culturing disease-primed immune cells (obtained from a cancer patient or from a patient with an infectious disease) with i) bryostatin and ionomycin (B/I) to activate and differentiate the cells; followed by sequentially culturing the cells with a) a combination of IL-7 and IL-15 and then b) IL-2, to further differentiate the cells and to render them immune resistant. The resistant immune cells are used to treat and prevent cancer and infectious diseases. |
| US08741640B2 |
Expanding hematopoietic stem cells
A method of expanding hematopoietic stem cells. Also disclosed is a method of diagnosing primary or secondary bone marrow failure syndrome. The invention further includes a method of treating primary or secondary bone marrow failure syndrome. |
| US08741637B2 |
Method for isolating a chemotherapeutic agent resistant cancer cell with stem cell properties
The invention relates to the use of encapsulates of cancer cells, in agarose coated, agarose containing beads, for isolating chemotherapeutic resistant cells which have at least one stem cell property, such as expression of OCT4. The cells thus isolated are also a feature of the invention, as is a method for screening for potential therapeutic agents. |
| US08741634B2 |
Soybean transcription terminators and use in expression of transgenic genes in plants
Five novel plant transcription terminators MYB2, KTI1, PIP1, EF1A2, and MTH1 are isolated from soybean and their functions in the regulation of RNA transcription and processing in plants are described. |
| US08741631B2 |
Submerged perfusion bioreactor
A device for biological purposes such as cell culturing, enzymatic reactions or filtering of fluid has a body with first and second surfaces. The body is delimited by a rim and an aperture in the center of the body. The aperture is covered at the first and second surface by first and second plates. The first and/or second plate has an inlet orifice allowing liquid medium into the aperture. Rotating means are arranged in the aperture between the first and second plate. At least one recessed portion is a cavity in the rim of the body having a first outlet orifice allowing the liquid medium to flow out of the body. At least one outlet channel connects the circular aperture with the recessed portion. Liquid is pumped into the aperture of the device and pumped through at least one outlet channel. |
| US08741628B2 |
Integrated process for the production of oil bearing Chlorella variabilis for lipid extraction utilizing by-products of Jatropha methyl ester (JME) production
An energy efficient process for the preparation of marine microalgae Chlorella fatty acid methyl ester (CME) from hydrolysate of deoiled cake of Jatropha (JOCH) and crude glycerol co-product stream (GL7 and GL8) along with seawater diluted with tap water (1:2). A small part of the crude glycerol layer in case of JME is processed to recover glycerol for glycerol washing and the otherwise problematic still bottom is utilized for microbial synthesis of PHAs and the rest is utilized for Microalgal conversion of JME byproducts into CME. The remaining part of the methanol-depleted glycerol layer is utilized, along with hydrolysate of the Jatropha deoiled cake (JOCH), for single-stage Microalgal production of lipids by a marine Microalgal isolate (Chlorella sp.) without the need for any other nutrients. Waste streams from the microalgal processes can be discharged directly into agricultural fields as biofertilizer or recycled back in the mass cultivation. |
| US08741627B2 |
Alcoholic xylose fermentation at high temperatures by the thermotolerant yeast Hansenula polymorpha
Methods and compositions for the production of ethanol from lignocellulosic starting materials are provided herein. Embodiments provide yeast cells of the genus H. polymorpha with one or more modifications, including, for example, an inactive acid trehalase gene, overexpression of xylulokinase, and/or overexpression of heat-shock protein 104. |
| US08741626B2 |
Mutant strain of Aspergillus setae with enhanced protease activity and preparation method of natural taste enhancer using the same
The present invention relates to a mutant strain of Aspergillus sojae with an enhanced protease activity and a preparation method of a natural taste enhancer using the same. More specifically, the present invention relates to the mutant strain of Aspergillus sojae with an enhanced protease activity is obtained by selecting a strain with high protease activity and treating it with N-methyl-N′-Nitroso-N-nitrosoguanidine (NTG) and inducing a mutation through irradiating, and a preparation method of a natural taste enhancer using protein hydrolysate obtained by hydrolyzing the protein sources with their cultures. |
| US08741624B2 |
Production of polyhydroxyalkanoates from polyols
Recombinant processes are provided whereby additional genes are introduced into E. coli which have been genetically engineered to produce PHA so that the improved strains produce PHA homopolymers and copolymers directly from diols. In preferred embodiments, PHAs containing 4-hydroxybutyrate monomers are produced directly from 1,4-butanediol; PHAs containing 5-hydroxyvalerate are produced from 1,5-pentanediol; PHAs containing 6-hydroxyhexanoate (6HH) are produced from 1,6-hexanediol; PHAs containing 3-hydroxypropionate are produced from 1,3-propanediol; PHAs containing 2-hydroxypropionate (lactate) are produced from 1,2-propanediol (propylene glycol); PHAs containing 2-hydroxyethanoate (glycolate) are produced from 1,2-ethanediol (ethylene glycol). Genes encoding these same enzyme activities can be introduced or their expression amplified in wild type PHA producers to improve the production of PHA homopolymers and copolymers directly from diol and other alcohol feedstocks. The PHA polymers are readily recovered and industrially useful as polymers or as starting materials for a range of chemical intermediates. |
| US08741621B2 |
Enhanced production and purification of a natural high intensity sweetener
Recombinant P. pastoris producing natural sweet proteins and methods for engineering these recombinant yeast are described. Methods for enhancing foreign protein production in yeast fermentation and improved methods for purification of foreign proteins produced in yeast fermentation are presented. |
| US08741619B1 |
Method for purifying protein aqueous
A method for purifying protein aqueous is provided. A protein aqueous is first provided. An absorption material is mixed into the protein aqueous to form a first mixture. The first mixture is separated into a solid-liquid two phases solution by a first separation process. A buffer solution is added into the solid phase from the solid-liquid two phases solution which has a target protein therein to form a second mixture. Then, a second separation process is performed to separate the second mixture to obtain a purified protein aqueous. |
| US08741618B2 |
Labeled enzyme compositions, methods and systems
Disclosed herein are conjugates comprising a biomolecule linked to a label that have biological activity and are useful in a wide variety of biological applications. For example, provided herein are labeled polymerase conjugates including a polymerase linked to one or more labels, wherein the conjugate has polymerase activity. Such conjugates can exhibit enhanced biological activity and/or superior detectability as compared to conventional labeled polymerases. Also disclosed herein are improved methods for preparing such conjugates, and methods and systems for using such conjugates in biological applications such as nucleotide incorporation, primer extension and single molecule sequencing. |
| US08741615B2 |
Magnetic nanoparticle with biocompatibility
A magnetic nanoparticle is provided in the disclosure. The magnetic nanoparticle includes a magnetic nanoparticle; a biocompatible polymer of the following formula (II) covalently coupled to the magnetic nanoparticle, wherein R1 is alkyl, aryl, carboxyl, or amino; n is an integer from 5 to 1000; and m is an integer from 1 to 10. |
| US08741608B2 |
Process for the fermentative preparation of L-ornithine
A process for the fermentative preparation of L-ornithine using microorganisms characterized by an increased export of the amino acid. |
| US08741606B2 |
Method of tagging using a split DBR
Aspects of the present invention include methods and compositions for determining the number of individual polynucleotide molecules originating from the same genomic region of the same original sample that have been sequenced in a particular sequence analysis configuration or process. In these aspects of the invention, a degenerate base region (DBR) is attached to the starting polynucleotide molecules that are subsequently sequenced (e.g., after certain process steps are performed, e.g., amplification and/or enrichment). The number of different DBR sequences present in a sequencing run can be used to determine/estimate the number of different starting polynucleotides that have been sequenced. DBRs can be used to enhance numerous different nucleic acid sequence analysis applications, including allowing higher confidence allele call determinations in genotyping applications. |
| US08741605B2 |
Gene expression markers for breast cancer prognosis
The present invention provides gene sets the expression of which is important in the diagnosis and/or prognosis of breast cancer. |
| US08741603B2 |
Enhancing spinosyn production with oxygen binding proteins
The invention describes the integration of polynucleotides into chromosomal DNA of S. spinosa species, which are useful for the production of insecticides, integrants thereof, and also to the use of the integrants. The invention includes the stable integration and expression of an oxygen-binding protein, VHb, which results in increased spinosyn production. |
| US08741600B2 |
Method for separation of immunoglobulin monomers
A method of accurately separating immunoglobulin monomers by subjecting an immunoglobulin solution containing at least immunoglobulin monomers and immunoglobulin aggregates to cross-flow filtration using an ultrafiltration membrane, an ultrafiltration membrane module, and a cross-flow filtration apparatus. The method can separate immunoglobulin monomers by subjecting an immunoglobulin solution containing at least immunoglobulin monomers and immunoglobulin aggregates and having an immunoglobulin concentration of 1 to 150 g/L to cross-flow filtration using an ultrafiltration membrane having a molecular weight cut-off of 100,000 or more and less than 500,000 so that immunoglobulin monomers passes through the ultrafiltration membrane with a permeability of 80% or more while achieving a fractionation performance in which the permeability ratio of immunoglobulin dimers to immunoglobulin monomers that pass through the ultrafiltration membrane is 0.20 or less. |
| US08741599B2 |
Fermentative production of organic compounds
A process for the fermentative production of at least one organic compound having at least 3 C atoms or having at least 2 C atoms and at least one 1 N atom, comprising the following steps: a1) milling a starch feedstock, thus obtaining a millbase which comprises at least part of the nonstarchy solid constituents of the starch feedstock; a2) suspending the millbase in an aqueous liquid and hydrolysis of the starch portion in the millbase by enzymatic liquefaction and, if appropriate, subsequent saccharification, whereby a first liquid (1) which comprises mono- or oligosaccharides is obtained; and b) addition of the liquid (1) which comprises mono- or oligosaccharides together with metabolizable mono-, di- or oligosaccharides or together with a composition which comprises metabolizable mono-, di- or oligosaccharide in a concentration of at least 50% by weight and which is essentially free from solids which are insoluble in water to a fermentation medium comprising a microorganism which is capable of overproducing the organic compound under fermentation conditions. |
| US08741598B2 |
Photocatalytic hydrogen production in cyanobacteria
A cyanobacterial cell comprising a PSI complex which accepts electrons from at least one respiratory cytochrome is disclosed. Methods of generating same and use of same for the production of hydrogen gas are also disclosed. |
| US08741595B2 |
Coliform detection process and kit for use therein
A process comprises (a) providing (1) at least one sample suspected of comprising at least one coliform strain, (2) at least one culture device comprising at least one culture medium that is hydrated or hydratable, and (3) at least one particulate concentration agent that is substantially optically transparent when in contact with the culture medium in the culture device when the culture medium is hydrated; (b) placing the particulate concentration agent in contact with the sample such that at least a portion of the coliform strain is bound to the particulate concentration agent to form coliform-bound particulate concentration agent; (c) placing the coliform-bound particulate concentration agent in contact with the culture medium; (d) incubating the culture device comprising the coliform-bound particulate concentration agent in contact with the culture medium, the culture medium being hydrated; and (e) optically detecting the presence of the coliform strain without separating the coliform strain from the particulate concentration agent. |
| US08741592B2 |
Methods of screening an agent for an activity in an isolated eye of a teleost
The present invention provides methods of screening an agent for an activity in an isolated organ, e.g., eye, from a teleost, e.g., zebrafish. Methods of isolating eyes from zebrafish are provided. Methods of screening an agent for an ocular activity in the isolated eye are provided. Methods of screening an agent for an ocular activity in a model of ocular disease or disorder are provided. Methods of screening an agent for an ocular activity in the isolated eye and for screening the agent for cell death and/or toxic activity in the eye or other organ or tissue are provided. The invention further provides high throughput methods of screening agents for an activity in isolated eyes of zebrafish in multi-well plates. |
| US08741591B2 |
pH-insensitive glucose indicator protein
The present invention encompasses a glucose indicator protein, a biosensor comprising one or more glucose indicator proteins, and methods of use thereof. |
| US08741588B2 |
Monoclonal antibodies against PBP2A derived from MRSA and methods of use
Mouse monoclonal antibodies specifically recognizing the Penicillin Binding Protein 2a (PBP2a) derived from a strain of Methicillin-Resistant Staphylococcus aureus (MRSA) were produced and characterized. The immunogen used to generate an immune response in a mouse was a PBP2a recombinant protein derived from a strain of Methicillin-Resistant Staphylococcus aureus (MRSA). The data showed that both monoclonal antibodies of the disclosure were able to distinguish MRSA from MSSA bacteria. The monoclonal antibodies have distinct recognition patterns for the regions of the PBP2a protein sequence. Epitope mapping has localized regions of the PBP2a protein specifically recognized by one or both of the monoclonal antibodies. The monoclonal antibodies of the present disclosure having the ability to distinguish between MRSA and MSSA strains can be useful as the basis for a diagnostic assay useful in the clinical setting for determining whether and which antibiotics to administer to a patient. |
| US08741580B2 |
Markers of renal transplant rejection and renal damage
The present invention relates to methods of detecting renal transplant rejection and other forms of renal damage. Protein markers or renal damage are provided, along with assays for detecting said markers. Also provided are methods for identifying markers of renal damage. |
| US08741579B2 |
Compounds and methods for the modulation of beta-1 integrin function to mediate tissue repair
The present invention provides methods and compositions which modulate beta 1 integrin activity by functioning as allosteric antagonists. In particular, the present invention provides methods for mediating tissue repair where insult or injury has occurred by antagonising the allosteric function of beta 1 integrin. |
| US08741576B2 |
Heteroclitic analogs and related methods
Heteroclitic analogs of Class I epitopes are prepared by providing conservative or semi-conservative amino acid substitutions at positions 3 and/or 5 and/or 7 of these epitopes. The analogs are useful in eliciting immune responses with respect to the corresponding wildtype epitopes. |
| US08741574B2 |
Gene expression signature of genomic instability in breast cancer
Methods of assessing genomic instability in breast cancer tissue by measuring the expression level of genes CDKN2A, SCYA18, STK15, NXF1, cDNA Dkfzp762M127, p28 KIAA0882, MYB, Human clone 23948, RERG, HNF3A, and ACADSB or a nucleic acid sequence comprising about 90% or greater sequence identity to SEQ ID NO: 21 in breast cancer tissue, an array suitable for use in such methods, and related methods and compositions. |
| US08741569B2 |
Methods for normalizing and for identifying small nucleic acids
The present teachings are generally directed to methods for normalizing at least one species of small nucleic acid that is present in a population of small nucleic acid species, wherein the relative concentration of at least one small nucleic acid species is substantially greater than the relative concentration of at least one other small nucleic acid species in the population. At least one small nucleic acid species is normalized using a multiplicity of primers comprising degenerate sequences. In some embodiments, a small nucleic acid species is identified by inserting at least part of an extension product from a normalized population into a vector and subsequently sequencing the insert. In some embodiments, a small nucleic acid species is identified by determining the sequence of at least part of an extension product. |
| US08741567B2 |
Composition and methods related to modification of 5-hydroxymethylcytosine (5-hmC)
The present invention relates generally to the field of molecular biology. More particularly, it concerns methods and compositions for detecting, evaluating, and/or mapping 5-hydroxymethyl-modified cytosine bases within a nucleic acid molecule. |
| US08741560B2 |
Stable compositions for nucleic acid amplification and sequencing
The present invention is directed to compositions comprising mixtures of reagents, including thermostable enzymes (e.g., thermostable DNA polymerases), buffers, cofactors and other components, suitable for immediate use in nucleic acid amplification or sequencing techniques without dilution or addition of further components. The compositions contain no stabilizing agents (e.g., glycerol or serum albumin) and unexpectedly maintain activity for extended periods of time upon storage at temperatures above freezing. These compositions are useful, alone or in the form of kits, for nucleic acid amplification (e.g., by the Polymerase Chain Reaction) and sequencing (e.g., by dideoxy or “Sanger” sequencing), or for any procedure utilizing thermostable DNA polymerases in a variety of medical, forensic and agricultural applications. In particular, the compositions and methods are useful for amplifying and sequencing nucleic acid molecules that are larger than about 7 kilobases in size. |
| US08741559B2 |
Cellular assay employing detectable protein
Provided herein are assays useful, for example, for determining the activity of a protein involved in a cellular process. In some embodiments, the activity of the protein is assessed using a nucleic acid tag, and in particular, by detecting the presence of a nucleic acid tag. Such assays can be used, for example, to study the effects of test compounds as modulators, e.g., inhibitors, agonists and antagonists, of protein activity. |
| US08741557B2 |
Predicting graft rejection
Prognostic methods useful in assessing patients who have received a transplant and reagents that can be used to carry out those methods are provided. The inventions are based, in part, on our analysis of gene expression in renal allografts and clinical parameters, i.e., variables associated with the donor, the recipient and/or the graft. The genes that can be assessed include those encoding agents that mediate inflammation, immune activation, and cell death (we may refer to these genes as “inflammatory”, “immune” or “cytoprotective”). Surprisingly, the levels of gene expression could predict the occurrence of DGF, AR, and the quality of later graft function even when analyzed shortly after (e.g., after vascular anastomosis and tissue reperfusion). We also found that clinical parameters available at the time of transplantation correlate with decreased graft health and can be considered in combination with gene expression to evaluate a patient's risk for an adverse outcome. |
| US08741556B2 |
Method for quantifying biomolecules
The present invention relates to a method that allows comprehensive quantitation of one or a plurality biomolecules, including the entire complement of biomolecules in a sample by comparing their quantity to the quantity of reference biomolecules in a standard mixture obtained via extraction from at least two different cell populations. The invention further relates to said standard mixture itself, its preparation and use. |
| US08741553B2 |
Aromatic hydrocarbon resin, underlayer film forming composition for lithography, and method for forming multilayer resist pattern
Provided is an aromatic hydrocarbon resin with a high carbon concentration and a low oxygen concentration that can be used as a coating agent or a resist resin for semiconductors, as well as a composition for forming an underlayer film for photolithography with excellent etching resistance as an underlayer film for a multilayer resist process, an underlayer film formed from the composition, and a method for forming a pattern using the underlayer film. An aromatic hydrocarbon, an aromatic aldehyde, and a phenol derivative are reacted in the presence of an acidic catalyst to yield an aromatic hydrocarbon resin with a high carbon concentration of 90 to 99.9 mass % and a solubility in propylene glycol monomethyl ether acetate of 10 mass % or more. |
| US08741550B2 |
Building up diffractive optics by structured glass coating
The invention relates to optical parts, and in particular to a process for applying an optically active structuring to a substrate, and also to a component produced using a process of this type. The process for applying an optically active structuring to a substrate comprises in particular photolithographic techniques and the deposition of material via physical vapor deposition processes. |
| US08741549B2 |
Method of manufacturing a liquid ejection head and liquid ejection head
Provided is a method of manufacturing a liquid ejection head, including: forming a covering resin layer including a photocationic polymerization initiator and a cationically polymerizable resin on a substrate having provided thereon an energy generating element for generating energy for ejecting liquid and a solid layer which is formed of a positive resist and serves as a pattern for a liquid flow path which communicates with a liquid ejection orifice for ejecting the liquid; exposing the covering resin layer to development to form the liquid ejection orifice; and removing the solid layer to form the liquid flow path, in which the covering resin layer includes, as a cationic polymerization inhibitor, an amine compound having a perfluoroalkyl group. Also provided is a liquid ejection head obtained by the method. |
| US08741542B2 |
Actinic ray-sensitive or radiation-sensitive resin composition, film formed using the composition and pattern forming method using the same
Provided is an actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a specific compound represented by a general formula, (B) a resin which is alkali-insoluble or sparingly alkali-soluble and becomes easily alkali-soluble in the presence of an acid, and (C) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; a film formed using the composition; and a pattern forming method using the same. |
| US08741538B2 |
Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
A polymer compound that, within a chemically amplified positive resist system, exhibits a significant change in alkali solubility from a state prior to exposure to that following exposure, as well as a photoresist composition that includes such a polymer compound and a method for forming a resist pattern, which are capable of forming fine patterns with a high level of resolution. The polymer compound includes, as an alkali-soluble group (i), a substituent group in which a group selected from amongst alcoholic hydroxyl groups, carboxyl groups, and phenolic hydroxyl groups is protected with an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1) shown below: [Formula 1] —CH2—O-AO—CH2—]n (1) (wherein, A represents an organic group of 1 to 20 carbon atoms with a valency of at least n+1, and n represents an integer from 1 to 4). |
| US08741534B2 |
Efficient solvent-based phase inversion emulsification process with defoamer
A process and system for making a resin emulsion suitable for use in forming toner particles including a silicone free anti-foam agent to control foam during formation of a polyester dispersion. |
| US08741529B2 |
Image forming method, image forming apparatus, and process cartridge
An image forming method including forming an electrostatic latent image on an image bearing member; developing the electrostatic latent image using a color toner and a transparent toner to form a color toner image and a transparent toner image thereon; transferring the color toner image and the transparent toner image to a recording material; and fixing the color toner image and the transparent toner image on the recording material. The color toner includes a polyester resin and a colorant, and the loss tangent of the color toner has a maximum peak at a temperature of from 80° C. to 160° C., and is not greater than 3 at the maximum peak. The transparent toner includes a crystalline polyester resin, and the loss tangent of the transparent toner has a maximum peak at a temperature of from 80° C. to 160° C., and is not less than 3 at the maximum peak. |
| US08741527B2 |
Liquid developer, developer cartridge, process cartridge, image forming apparatus, and image forming method
A liquid developer includes: a carrier liquid; and toner particles that are dispersed in the carrier liquid and that includes a styrene-based thermoplastic elastomer, a styrene-based thermoplastic resin, and a quaternary ammonium base-containing polymer having a constituent unit expressed by Chemical Formula I: wherein R1 represents hydrogen or an alkyl group with a carbon number equal to or less than 3, R2 represents an alkylene group with a carbon number equal to or less than 18, R3 to R5 represent an alkyl group or an aralkyl group with a carbon number equal to or less than 18, X represents —COO— or —CONH—, and Y− represents a halogen ion or an anion having a —COO— group or a —SO3— group in the structure thereof. |
| US08741526B2 |
Developer
There is provided a developer that has excellent positive charging characteristics and charging stability, and which is compatible with high-speed developing. The developer of the invention contains toner particles and an insulating liquid, wherein a fatty acid ester is contained as the insulating liquid, a substance A expressed by the following formula (1) and/or a substance B expressed by the following formula (2) is further contained, and the total percentage in which substance A and substance B are contained is at least 0.1 wt % and no more than 3.0 wt %. |
| US08741524B2 |
Toner, developer, and image forming method
A toner containing at least a binder resin and a colorant, wherein the toner has a core-shell structure composed of a core, and a shell having a thickness of 0.01 μm to 2 μm on a surface of the core, and wherein the toner satisfies the following relation: 1.1≦ST/CT≦2.0 where ST is a softening temperature of the shell, and CT is a softening temperature of the core, both measured by a SPM probe with an integrated heater. |
| US08741522B2 |
Electrostatic charge image developing toner, electrostatic charge image developer, toner cartridge, process cartridge, image forming apparatus, and image forming method
An electrostatic charge image developing toner includes: a polyester resin that has a glass transition temperature of about 45° C. or higher and in which a proportion of repeating units derived from fumaric acid in repeating units derived from acid components is 10 mol % or greater and a proportion of repeating units derived from alkenylsuccinic acid in the repeating units derived from acid components is 10 mol % or greater; and a photopolymerization initiator, wherein a content of the photopolymerization initiator is from about 0.5% by weight to about 10% by weight. |
| US08741521B2 |
Toner, developer, image forming method and image forming apparatus
A toner containing toner particles, each toner particle containing: a releasing agent; a colorant; and a binder resin containing at least a crystalline polyester resin and a non-crystalline polyester resin, wherein in the case where a volume average particle diameter of the toner is defined as Dv, the toner contains a group of the toner particles having 4/5 Dv, and a group of the toner particles having 6/5 Dv, and wherein an endothermic value A of the crystalline polyester resin at a first temperature increase in DSC of the toner, an endothermic value B of the crystalline polyester resin at a first temperature increase in DSC of the group of the toner particle having 4/5 Dv, and an endothermic value C of the crystalline polyester resin at a first temperature increase in DSC of the group of the toner particles having 6/5 Dv satisfy the relation represented by the following formulas: 50<(B/A)×100<90, and 110<(C/A)×100<150. |
| US08741520B2 |
Image forming toner, image forming apparatus, image forming method, and process cartridge
The present invention provides an image forming toner including at least a linear polyester resin (b1) as a binder resin, wherein the linear polyester resin (b1) is obtained by reacting a polyester diol (b11) having a polyhydroxycarboxylic acid skeleton, with a polyester diol (b12) other than the polyester diol (b11) in the presence of a chain extending agent. |
| US08741519B2 |
Toner
Provided is a toner having an excellent low-temperature fixability and hot offset resistance, a broad fixing temperature latitude in low-temperature areas to high-temperature areas, and a high heat-resistant storage stability. The toner includes toner particles having a core-shell structure in which a shell phase containing a resin A is formed on a core containing a binder resin, a colorant and a wax. In measurement of resin A by a differential scanning calorimetry (DSC), the peak temperature TpA (° C.) of a maximum endothermic peak in the first temperature rise is at least 55° C. but not more than 80° C. In measurement of a viscoelasticity of resin A, the loss elastic modulus at TpA−10 (° C.) is at least 1×107 Pa but not more than 1×108 Pa. In measurement of the viscoelasticity of resin A, the loss elastic moduli at TpA (° C.), TpA+10 (° C.) and TpA+25 (° C.) satisfy specific conditions. |
| US08741517B2 |
Toner for developing electrostatic latent image and method of preparing the same
A toner includes a binder including two different weight molecular weight resins, a colorant, and a releasing agent, wherein a gel permeation chromatogram (GPC) molecular weight distribution curve of the toner has a major peak (Mp) present in a range of about 1.0×104 to about 3.0×104 g/mol and a shoulder curve starting at 1.0×105 g/mol or more, and a storage modulus (G′) curve of the toner with respect to temperature has Ts, which is a temperature at which a storage modulus value begins to decrease, in a temperature range of about 50 to about 67° C. |
| US08741510B2 |
Method of calculating amount of fluctuation of imaging characteristic of projection optical system, exposure apparatus, and method of fabricating device
In a case where a substrate is exposed to exposure light of a first wavelength band, an exposure coefficient, which is defined as an amount of fluctuation of an imaging characteristic of a projection optical system per unit of exposure energy, for the first wavelength band is calculated using data of the amount of fluctuation of the optical characteristic of the projection optical system. An exposure coefficient for a second wavelength band that is different from the first wavelength band is calculated using the exposure coefficient for the first wavelength band. In a case where the substrate is exposed to exposure light of the second wavelength band, the amount of fluctuation of the imaging characteristic of the projection optical system is calculated using the exposure coefficient for the second wavelength band. |
| US08741509B2 |
Colored curable composition, color filter, and method for producing color filter
A colored curable composition for a solid-state image sensor comprises a polyhalogenated zinc phthalocyanine pigment, and a compound having at least a structure represented by the following Formula (A). In Formula (A), X1, X2, X3, X4, X5, and X6 each independently represent a substituent selected from —OH, —OR, or —NHCOCH═CH2, R represents a monovalent organic group. When the compound is an oligomer, the oligomer has a configuration in which at least one of X1, X2, X3, X4, X5, and X6 in a structure represented by Formula (A) is eliminated to form a single bond, which is then linked, via —O—, to another structure represented by Formula (A). |
| US08741508B2 |
Colored curable composition, color resist, ink-jet ink, color filter and method for producing the same, solid-state image pickup device, image display device, liquid crystal display, organic el display, and colorant compound and tautomer thereof
A colored curable composition including: at least one selected from the group consisting of a compound represented by the following Formula (1a) and a tautomer thereof; and at least one polymerizable compound, wherein R11, R12, R13, R14, R15, and R16 each independently represent a hydrogen atom or a monovalent substituent; and R11 and R12, and R15 and R16 independently may bond to each other in each pair to form a ring. |
| US08741507B1 |
Method for separating photomask pattern
A method for separating photomask pattern, including the following steps: first, a layout pattern is provided, wherein the layout pattern is defined to have at least one critical pattern and at least one non-critical pattern. Then, a first split process is performed to separate the critical pattern into a plurality of first patterns and a plurality of second patterns. A second split process is performed to separate the non-critical pattern into a plurality of third patterns and a plurality of fourth patterns. Finally, the first patterns and the third patterns are output to a first photomask, and the second patterns and the fourth patterns are output to a second photomask. |
| US08741504B2 |
Solid catalysts and fuel cell employing the solid catalysts
A solid catalyst having a close-packed structure has basic structural units present in the surface of the solid catalyst, the basic structural units including (i) a triangular lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the triangular lattice so that each atom of one of the elements adjoins atoms of the other elements or (ii) a rhombic lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the rhombic lattice in an atomic ratio of 1:2:1 so that each ruthenium atom directly adjoins a platinum atom and an atom of the additional element; and a fuel cell includes either of the solid catalyst as an anode-side electrode catalyst. |
| US08741501B2 |
Nanoengineered membrane-electrode assembly for high-temperature proton exchange membrane fuel cells
A membrane electrode assembly for a high-temperature proton-exchange membrane fuel cell includes a nano-engineered polymeric membrane between an anode and a cathode. The membrane is an electrical insulator, but permits that passage of protons through the membrane. The membrane has a plurality of blind pores therein, each blind pore having an electrically-conductive coating along its inner wall that is in electrical contact with the adjacent one of the anode or cathode. The electrically-conductive coating includes a catalyst, such as platinum, for promoting the liberation of a proton and an electron from a chemical molecule, such as hydrogen, and/or for promoting the combination of a proton, an electron and another molecule, such as oxygen, to form yet another molecule, such as water. |
| US08741498B2 |
Fuel cell
In a fuel cell, one of separators that are opposed to each other and an intermediate body interposed between the separators are sandwiched by a cell monitor. An end portion of the intermediate body extends to an edge portion of a cell monitor mounting portion of the above-indicated one separator. The intermediate body includes at least one of a member that functions to hold an electrolyte body, a spacer (as in the case where the intermediate body is a resin frame), and a seal member or members. A major surface of the separator in the cell monitor mounting portion on which the cell monitor is mounted is in surface contact with a terminal of the cell monitor for conduction therebetween. |
| US08741494B2 |
Fuel cell power plant used as reformate generator
A method for operating a fuel cell power plant to provide end-use electricity, end-use heat and end-use reformate includes the steps of providing a fuel cell power plant that consumes reformate to provide electricity and heat, said fuel cell power plant having a nominal reformate flow rate and including a fuel processor system for generating reformate from a hydrocarbon fuel; operating the fuel processor system so as to provide a reformate flow at a rate greater than the nominal reformate flow rate; operating the fuel cell power plant using a first portion of the reformate flow to generate the electricity and the heat, the first portion being less than or equal to the nominal reformate flow rate; and providing a second portion of the reformate flow as the end-use reformate. |
| US08741491B2 |
Ionic liquid containing sulfonate ions
Embodiments are related to ionic liquids and more specifically to ionic liquids used in electrochemical metal-air cells in which the ionic liquid includes sulfonate ions as the anion. |
| US08741489B2 |
Separator for lithium ion secondary battery, method for manufacture thereof, and lithium ion secondary battery
Disclosed are a separator for lithium ion secondary batteries, having an inorganic layer formed from inorganic particles, characterized in that the inorganic particles have a particle diameter distribution in which the 50% cumulative particle diameter D50 is in the range of 100 nm to 500 nm, the 10% cumulative particle diameter D10 is 0.5D50 or more, and the 90% cumulative particle diameter D90 is 2D50 or less; a method for manufacturing the separator; and a lithium ion secondary battery using the separator. When the separator is used, there can be produced a lithium ion secondary battery in which a short circuit caused by contraction or melting can be definitely prevented, as well as the current density applied to the electrodes during charging and discharging is uniform so that charging and discharging can be efficiently achieved. |
| US08741487B1 |
Electrode current collector with stress-relieving mesh structure
A current collector comprising a frame conductor formed as a closed undulating perimeter, and a conductive mesh formed within the frame conductor is described. The conductive mesh is comprised of a plurality of radial struts, each radial strut having a central end and an outer end. The radial struts emanate from a junction within the undulating perimeter with their outer ends connected to the undulating perimeter of the frame. The conductive mesh may include branch struts having proximal ends and distal ends, with the proximal ends connected to the radial struts. The distal ends of the branch struts may be connected to the undulating perimeter, or to adjacent radial struts. The current collector is used in an electrochemical cell, wherein a first electrode active material is contacted to at least one of first and second major sides of the current collector to provide a first electrode. |
| US08741485B2 |
Layer-layer lithium rich complex metal oxides with high specific capacity and excellent cycling
Lithium rich and manganese rich lithium metal oxides are described that provide for excellent performance in lithium-based batteries. The specific compositions can be engineered within a specified range of compositions to provide desired performance characteristics. Selected compositions can provide high values of specific capacity with a reasonably high average voltage. Compositions of particular interest can be represented by the formula, x Li2MnO3.(1−x) Li Niu+ΔMnu−ΔCowAyO2. The compositions undergo significant first cycle irreversible changes, but the compositions cycle stably after the first cycle. |
| US08741482B2 |
Mixed cathode active material having improved power characteristics and lithium secondary battery including the same
Provided are a mixed cathode active material including layered structure lithium manganese oxide expressed as Chemical Formula 1 and a second cathode active material having a plateau voltage profile in a range of 2.5 V to 3.3 V, and a lithium secondary battery including the mixed cathode active material. The mixed cathode active material and the lithium secondary battery including the same may have improved safety and simultaneously, may be used in an operating device requiring the foregoing battery by widening a state of charge (SOC) range able to maintain power more than a required value by allowing the second cathode active material to complement low power in a low SOC range. |
| US08741480B2 |
Non-aqueous secondary battery comprising a polyvalent organic lithium salt
The non-aqueous secondary battery of the present invention comprises a positive electrode containing a lithium-containing composite oxide as an active material, a negative electrode, a separator, and a non-aqueous electrolyte. The non-aqueous electrolyte contains polyvalent organic lithium salt, and the content of the polyvalent organic lithium salt is 0.001 parts by mass or more and 1 part by mass or less with respect to 100 parts by mass of all of the components of the non-aqueous electrolyte other than the polyvalent organic lithium salt. |
| US08741478B2 |
Pouch-type rechargeable battery and its method of manufacture
A pouch-type rechargeable battery and its method of manufacture includes: an electrode assembly having a resin layer attached to the outer surface of an electrode tap, and a pouch having a sealing part formed on the ends of the top and bottom thereof, housing the electrode assembly. The resin layer is positioned inside the sealing part and sealed by heat and pressure for preventing it from being exposed outside the sealing part. Thus, the pouch-type rechargeable battery is adapted to seal the resin layer in the sealing part, instead of exposing it outside the sealing part so as to reduce the longitudinal length of the battery, thereby improving the capacity of the battery. |
| US08741471B2 |
Battery pack
A battery pack including a core pack including a plurality of unit cells, the plurality of unit cells including a first unit cell including a first electrode tab extending in a first direction, and a second unit cell including a second electrode tab coupled to the first electrode tab at a first coupling region at which the second electrode tab overlaps the first electrode tab; and a lead member coupled to the first electrode tab at a second coupling region at which the lead member overlaps the first electrode tab, the second coupling region being different from the first coupling region. |
| US08741470B2 |
Electrochemical device having different kinds of separators
An electrochemical device includes a plurality of unit cells, each having a first separator and a cathode and an anode positioned at both sides of the first separator, and a continuous single second separator interposed between adjacent unit cells in correspondence with each other in a laminated pattern and arranged to surround each unit cell. The first separator includes a heat-resisting porous substrate having a melt point of 200° C. or above and a first porous coating layer formed on at least one surface of the heat-resisting porous substrate and made of a mixture of a plurality of inorganic particles and a binder polymer. The second separator includes a polyolefin porous substrate and a second porous coating layer formed on at least one surface of the polyolefin porous substrate and made of a mixture of a plurality of inorganic particles and a binder polymer. |
| US08741469B2 |
Electrode assembly with multiple separators wound about a winding center
An electrode assembly for a secondary battery, a method of manufacturing the electrode assembly and a secondary battery having the electrode assembly. The electrode assembly includes a plurality of electrode members arranged in a stacked shape along a baseline extending in one direction and a separation unit separating two adjacent electrode members. The separation unit includes three or more separators having a same winding center. |
| US08741466B2 |
Conduction and convection cooled energy storage system
An energy storage system comprising at least one energy storage module adapted to supply electrical energy to a hybrid vehicle. The energy storage module comprises an enclosure having at least one battery array located within the enclosure. The energy storage module includes a thermal pad disposed between the battery array and an interior surface of the primary enclosure. A heat sink is disposed on an exterior surface of the primary enclosure. The heat sink comprises a plurality of fins which may be disposed angularly with respect to a longitudinal axis of the primary enclosure. The height or length of the fins may be varied relative to a fan location to provide uniform cooling across the battery cells in the battery array. An enclosing plate is mounted exterior to the heat sink and defining an airflow cavity, wherein the enclosing plate directs air from the fan across the heat sink. |
| US08741464B2 |
Inertia enhanced latching system
An electronic device and battery are presented. The electronic device includes the battery, which has a first latch. The first latch has an arm and a hook. The arm is connected with the battery at a connected end and the hook at a free end opposed to the connected end. The hook forms a peak and a base connected with the free end. The base forms an inwardly projecting groove. The electronic device also includes a device housing forming a main cavity bound by first and second side surfaces, a rear surface and a bottom surface. The first side surface includes a ledge for receiving the groove and defines a latch cavity for receiving the first latch. In an engaged position, the peak extends into the latch cavity and the groove engages the ledge. |
| US08741463B2 |
Fuel cell
A fuel cell assembly that includes at least one cell cartridge with two or more cell modules, a pair of electrodes and current collectors, each cell cartridge further having a fixing portion and module connecting portions; and an outer case for storing one or more cell cartridges, the outer case having a plurality of planar cartridge connecting portions. |
| US08741462B1 |
Kit for remote location of smoke detector battery
A kit is provided that provides for remotely locating a smoke detector battery from a surface mounted smoke detector of the type that comprises an internal two wire battery connector. The kit comprises a first connector arranged to mate with the internal two-wire battery connector. The kit also includes a length of surface mountable tape wire comprising at least two, flat, thin, flexible, elongate conductors carried by an insulating tape. A second connector is configured to connect the first pair of electrical wire conductors to the two elongate conductors. A container is provided for containing a smoke detector battery. The container comprises a pair of contacts for electrically connecting to a smoked detector battery. A third connector is provided to connect the container contacts to the elongate conductors. The container is mountable at a location on a wall surface to provide convenient access to the battery. |
| US08741456B2 |
Battery temperature control apparatus and battery temperature control method
A battery temperature control apparatus capable of controlling the temperature of a battery to reach a suitable condition is provided. Thermal capacity determining unit 61, based on the temperature of battery 1 detected by battery temperature detector 2 and a target temperature stored in storage unit 5, determines the thermal capacity necessary for setting the temperature of battery 1 to the target temperature. Temperature regulating ability determining unit 62, based on the temperature of battery 1 detected by battery temperature detector 2 and the temperature of the temperature regulating medium detected by medium temperature detector 4, determines the temperature regulating ability of fan 3. Flow rate controller 63, based on the thermal capacity determined by thermal capacity determining unit 61 and the temperature regulating ability determined by temperature regulating ability determining unit 62, controls the flow rate of the temperature regulating medium sent by the fan. The temperature of battery 1 becomes close to the target temperature due to the temperature regulating medium sent from fan 3. |
| US08741454B2 |
Proton exchange membrane for fuel cell
A proton exchange membrane (PEM) with an ion exchange capacity of not less than 1 molar equivalent per kilogram and less than 20% water swelling is provided. The PEM includes a polymer having a polyphosphazene backbone with a polyaromatic functional group linked to the polyphosphazene as a polyaromatic side chain, a non-polyaromatic functional group linked to the polyphosphazene as a non-polyaromatic side chain, and an acidic functional group linked to the non-polyaromatic side chain. The polyaromatic functional group linked to the polyphosphazene provides for increased thermal and chemical stability, excellent ionic conductivities and low water swelling. The mole fraction of polyaromatic functional groups linked to the polyphosphazene backbone is between 0.05 and 0.60. |
| US08741453B2 |
Current interrupting device and secondary battery including current interrupting device
Disclosed are a current interrupting device and a secondary battery including the same. According to an embodiment, a current interrupting device comprises a first terminal; a second terminal; a fuse coupled to the first and second terminals; and a fuse body surrounding an exterior of the fuse to seal the fuse, wherein the first and second terminals include thin portions connected to the fuse, and the thin portions have a thickness less than a thickness of other portions of the first and second terminals. |
| US08741448B2 |
Fullerene derivatives and optoelectronic devices utilizing the same
Disclosed is a fullerene derivative having a formula of F-Cy, wherein F is an open-cage fullerene, and Cy is a chalcogenyl group. The fullerene derivative can be applied to hydrogen storage material and an optoelectronic device such as an organic light emitting diode (OLED), a solar cell, or an organic thin film transistor (TFT). |
| US08741446B2 |
Organic compound and organic electroluminescent device employing the same
Organic compounds and organic electroluminescent devices employing the same are provided. The organic compound has a chemical structure represented below: wherein, R1, R2, R3, R4, R5, and R6 are independent and can be H, C1-8 alkyl, C1-8 alkoxy, C1-8 halo-alkyl, aryl, heteroaryl, cycloalkyl, hetero-cycloalkyl, or cycloaliphatic group, and A is S, or |
| US08741445B2 |
Aluminum or aluminum alloy material having surface treatment coating film, and method for treating a surface thereof
Provided is an aluminum or aluminum alloy material having a surface treatment coating film on a surface of a substrate formed by an aluminum or aluminum alloy. The aluminum or aluminum alloy material has: a substrate formed by an aluminum or aluminum alloy; and a first protective layer and a second protective layer in the order on a surface of the substrate, wherein the first protective layer is a conversion coating film including vanadium and at least one or more types of metals selected from titanium, zirconium, and hafnium, the second protective layer is an organic coating film having a composition that includes (1) a chitosan derivative and a solubilizing agent, (2) a modified polyvinyl alcohol formed by graft polymerization of a hydrophilic polymer to a side chain of polyvinyl alcohol, and (3) a water-soluble crosslinking agent. |
| US08741442B2 |
Modified electrodes using functional organic materials and electronic devices therefrom
A surface modified electrode, included in an electronic device comprises an electrode layer, and a functional organic material. The functional organic material comprises an amine-substituted polymeric material which is on the surface of and in contact with the electrode layer. Such surface modified electrodes are useful for producing electronic devices. |
| US08741441B2 |
Insulated wire
An insulated wire includes a conductor, and an insulating covering layer formed on a periphery of the conductor and including two or more insulating coatings. The insulating coatings include a polyamide-imide resin insulating material represented by chemical formula 1: where R indicates a divalent aromatic diamine including three or more aromatic rings. The insulating coatings are formed by applying and baking the polyamide-imide resin insulating material, and the polyamide-imide resin insulating material is obtained by reacting an imide group containing dicarboxylic acid with a diisocyanate, the imide group containing dicarboxylic acid being obtained by dehydration reaction of a diamine comprising a divalent aromatic diamine including three or more aromatic rings with an acid using an azeotropic solvent. |
| US08741437B2 |
Substrate with antimicrobial properties
Substrate with Antimicrobial Properties An antimicrobial substrate (glass, ceramic or metallic) coated on at least one of its surface with at least one mixed layer deposited by a sputtering under vacuum magnetically enhanced process is described. The layer comprising at least one antimicrobial agent mixed to binder material chosen amongst the metal oxides, oxynitrides, oxycarbides or nitrides. This substrate present antimicrobial properties, in particular bactericidal activity even when no thermal treatment has been applied. If a tempered and antimicrobial glass is required, the same co-sputtering process can be used, optionally an underlayer can be added. Antimicrobial properties are maintained even after a tempering process. |
| US08741436B2 |
Window glass with conductive ceramic fired body
A window glass with a conductive ceramic fired body includes at least one glass plate having main surfaces, and the conductive ceramic fired body including a feeding point and a linear portion which is disposed on either one of the main surfaces of the glass plate, at least a part of the linear portion being placed in a visible region of the window glass and formed by successively laminating a first colored layer, a conductor layer and a second colored layer on the main surface, wherein the first colored layer and the second colored layer each include a pigment and a glass component, and the conductor layer includes silver and the glass component. |
| US08741435B2 |
Method and apparatus for coating substrates
According to various embodiments, a coating mixture is capable of being applied on a substrate. The coating mixture includes acidified graphite particles, a suspension of polytetrafluoroethylene resin in water, and silver ion doped microporous particles. When the coating mixture is applied to a surface of the substrate, the coating resists growth of microorganisms. |
| US08741434B2 |
Transparent conductive films containing carbon nanotubes and touch panel
Disclosed herein is a transparent conductive polycarbonate film coated with carbon nanotubes, including a transparent conductive layer formed by applying a mixed solution of carbon nanotubes and a binder on one side or both sides of a transparent polycarbonate film, and a touch panel using the transparent conductive polycarbonate film as a lower transparent electrode. The present invention provides a transparent conductive polycarbonate film coated with a mixed solution of carbon nanotubes and a binder, by which a touch panel having high transmissivity can be manufactured by directly forming a transparent conductive layer on a polycarbonate film used as a protective film of a liquid crystal display using carbon nanotubes, without using a polyethylene terephthalate (PET) substrate used for a transparent electrode of a conventional touch panel, by which the production cost of the touch panel can be decreased, and by which a thin touch panel can be manufactured. |
| US08741433B2 |
Packaging films comprising nylon blend compositions
Compositions and packaging films are provided having a blend of an amorphous nylon copolymer, a low temperature polyamide, and a high temperature polyamide. The compositions can be used in making heat shrinkable films and food packages having desirable levels of free shrink. |
| US08741430B2 |
Storage stable amino-formaldehyde resins and applications thereof
Amino-formaldehyde resins may be prepared using formulations including formaldehyde, glycerin and at least one amino compound selected from the group consisting of urea, melamine, and mixtures thereof; under reaction conditions sufficient to prepare a resin, wherein; the amino-formaldehyde resin is prepared in a substantial absence of a sulfonating agent, ethylene glycol, and polyalkylene glycols. If the amino compound is urea, then the urea is present in a molar ratio of formaldehyde to urea ranging from 0.70 to 1.30; if the amino compound is melamine, then the melamine is present in a molar ratio of formaldehyde to melamine ranging from 1.3 to 2.2; and if the amino compound is a mixture of urea and melamine, then the mixture of urea and melamine is present in a molar ratio of formaldehyde to urea and melamine ranging from 0.35 to 1.3. |
| US08741424B2 |
Transparent conductive element, input device, electronic device, and master for fabrication of transparent conductive element
A transparent conductive element includes a base having a first surface and a second surface, and a transparent electrode pattern part and a transparent insulating pattern part formed on at least one of the first surface and the second surface. The transparent electrode pattern part and the transparent insulating pattern part are laid alternately on a base surface. Plural pore portions are randomly formed apart in the transparent electrode pattern part and. Plural island portions are randomly formed apart in the transparent insulating pattern part. |
| US08741421B2 |
Process for the manufacturing of surface elements with a structured top surface
A process for the manufacturing of a decorative surface element, which element comprises a base layer and a decorative upper surface. A radiation curing lacquer is printed in a predetermined pattern as an uppermost layer on the decorative upper surface. The radiation curing lacquer covers only parts of the decorative upper surface whereby the lacquer is exposed to radiation whereby it cures. A surface structure is hereby achieved. |
| US08741418B2 |
Method for manufacturing of cellular board, cellular board, method for producing cellular board element of steel plate strip, and production line
The object of the invention is a method for manufacturing cellular board (1), a cellular board, a method for producing cellular board element of steel plate strip, and a production line. A cellular board (1) according to the invention comprises a number of originally separate profiles (4, 6) of plate-like material, which have been fastened to each other. A single profile is intended to form in a finished cellular board a substantially planar first surface projection (6, 6′), a substantially planar second surface projection (6″, 6′″), a core (4, 4′), which is arranged to interconnect the first and second surface projections. In the cellular board (1) the profiles are fastened to each other so that in the adjacent lamellae the first surface projections (6, 6′) are located side by side and form thus a first surface plate (2) of the cellular board, the second surface projections (6″, 6′″) are located side by side and form thus a second surface plate (3) of the cellular board, the profile cores (4, 4′) form the core structure of the cellular board. |
| US08741416B2 |
Sandwich panel with integrated reinforcing structure and method for the production thereof
A Sandwich panel with a core structure, in particular with a honeycomb-shaped core structure, and plane-parallel cover layers applied to both sides of this core structure, to form a floor surface in a fuselage airframe of an aircraft, the core structure having at least one recess into which at least one reinforcing structure is integrated, wherein the at least one reinforcing structure is formed with at least one core, said core having at least one recess into which a stopper is introduced, into which at least one attachment element can be introduced to attach at least one further component to the sandwich panel, and a plurality of prepreg strips which each have a uniform fiber running direction being wound around the core. In addition, the invention relates to a method for the production of a sandwich panel according to the invention. |
| US08741413B2 |
Large diameter, high quality SiC single crystals, method and apparatus
A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations. |
| US08741412B2 |
Seam and seam tape
A seam comprising a first piece of laminated fabric, a second piece of laminated fabric, a layer of adhesive hydrostatic polymer, and a seam tape wherein the first and second pieces of laminated fabrics are coupled together at a common border with the layer of adhesive hydrostatic polymer to form a seam, and wherein the seam tape is at least partially coupled along the seam. A method of forming a seam comprising stacking, in order, a first piece of laminated fabric, at least one strip of adhesive hydrostatic polymer, and a second piece of laminated fabric, ultrasonically coupling the first piece of laminated fabric, strips of adhesive hydrostatic polymer, and second piece of laminated fabric together, wherein at least a portion of adhesive hydrostatic polymer from the strips of adhesive hydrostatic polymer is extruded through the seam, and applying a seam tape along at least a portion of the seam. |
| US08741410B2 |
Manufacturing method and system and associated rolls of sheets with alternating cuts and pre-cuts
A roll includes a succession of sheets of single-use absorbent paper, the succession of sheets includes a first sheet partially defined by a first line of perforations and a first cut arrangement partially defined by a first cut, a second cut, and a connecting region arranged between the first cut and the second cut and a second sheet partially defined by the first cut arrangement, and a second line of perforations. |
| US08741407B2 |
Tube system
The present invention relates to a hose system, in particular for vehicle tires, having a hose (12) formed into a ring, comprising polyurethane and having an at least substantially constant wall thickness along the extent thereof, wherein the substantially constant value of the wall thickness is in the range between 0.1 mm and 0.4 mm. |
| US08741405B2 |
Package
A package is formed a closed bag made of a multilayer film and contents enclosed in the bag. The film is folded to form the bag and has flat film sides and outer edges that are reinforced by weld seams. The film of the bag has a density of 0.5 g/cm3 to 0.9 g/cm3, a printable outer layer forming an outside surface of the package, an inner seal layer made of a sealable polymer forming an inside surface of the package, and a foamed polymer core layer between the outer layer and the inner layer. The contents are a lumpy or granular bulk material. |
| US08741404B2 |
Packaging for lipophilic materials
The present invention relates to a packaging comprising a container surrounding a container interior, wherein at least the inner surface of the container in contact with the container interior is produced from a composition which comprises a thermoplastic polymer, and a plasticizer composition comprising—a polymeric plasticizer and a polyol ester, and wherein the container is at least partly filled with a lipophilic packed product. |
| US08741402B2 |
Webs with synergists that promote or preserve the desirable color of meat
Food packaging articles, food packaging webs, and food packaging methods comprising a myoglobin blooming agent and synergist that promote or preserve the desirable appearance of food products are provided. The food contact layer of the packaging webs may comprise a myoglobin blooming agent and a synergist. |
| US08741400B2 |
Latent image pattern formed body
This invention provides a latent image pattern formed body that allows to observe a latent image having excellent visibility and authenticity discrimination and design properties than those of related arts when observed from the oblique direction. The latent image pattern formed body includes, in at least part of one surface of a substrate, a latent image region, an outline region arranged on an outline of at least part of the latent image region, and a background region arranged on a background of the latent image region and the outline region. In the latent image region, a plurality of first elements having a concave or convex shape are arranged at a first pitch in a first direction. In the background region, the plurality of first elements are arranged at the first pitch in the first direction in a phase different from that of the first elements in the latent image region. In the outline region, the plurality of first elements are arranged at the first pitch in the first direction in a phase different from that of the first elements in the latent image region or background region adjacent to the outline region. In the latent image region, the background region, and the outline region, a plurality of second elements having a color different from that of the substrate are arranged at a second pitch in a second direction. |
| US08741398B2 |
Liquid crystal panel and alignment film thereof
The present invention provides a liquid crystal panel and an alignment film thereof, and the alignment film is made of a modified polyimide which has conjugated double bond at side chain. Resistance value of the alignment film is less than the resistance value of a liquid crystal material of the liquid crystal panel by properties of the conjugated double bond that can reduce the resistance value of a prior art polyimide. In addition, improving the imidization ratio of a modified polyimide alignment film is important. The present invention is conducted the charged ion from liquid crystal layer to the alignment film by the conjugated double bond of the modified polyimide at the side chain to prevent the increase in the ion density of the liquid crystal in part of this area, and improve the problem of image sticking. |