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Charge storage target and method of manufacture having a plurality of isolated charge storage sites

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专利汇可以提供Charge storage target and method of manufacture having a plurality of isolated charge storage sites专利检索,专利查询,专利分析的服务。并且A charge storage device and method of manufacture of the type in which a target electrode provides a plurality of spatially disturbed isolated charge storage sites of semiconductor material provided within the interstices of an electrical conductive mesh with insulating barrier means provided between the semiconductor storage sites and the conductive mesh. Input excitation is directed onto the input side of the target and may be in the form of electrons or light capable of generating electron-hole pairs within the semiconductor material which diffuse through to the storage sites. The storage sites which are located on the output side of the target are provided with sensing and converting means such as an electron beam for converting the charge into an electrical signal. The process of manufacture of the device includes providing a semiconductor wafer with a substrate and pillars extending from one surface of said substrate, forming a junction within the upper portion of the pillar, providing an insulating coating on the pillars and surrounding intervening surfaces between the pillars, electroplating an electrical conductive support mesh within the moat region surrounding the pillars and etching away the substrate of the wafer so that only the pillar members remain supported within the metallic support mesh framework. The conductive mesh with the insulating coating provides a barrier about each semiconductor storage site and permits passage of minority carriers generated near the input side of the target within the semiconductor member to the storage sites without diffusion to adjacent storage sites. In this manner, the target images intense spots of input radiation in a scene without significant spreading or blooming of the high intensity spots caused by lateral diffusion of the minority carriers through adjacent storage sites.,下面是Charge storage target and method of manufacture having a plurality of isolated charge storage sites专利的具体信息内容。

1. A charge storage target electrode sensitive to input radiations comprising: an electrically conductive base layer; a plurality of spatially distributed semiconductive storage pillar-like members extending from the conductive base layer; a p-n junction within each of said pillar-like members; an insulating layer provided on the conductive base layer between the spatially distributed pillar-like members, which insulating layer extends up the sides of the pillar-like members a predetermined distance to electrically isolate individual pillar-like members; an electrically conductive layer atop the insulating layer between the spatially distributed pillar-like members; an electrically conductive contact pad provided atop each pillar-like member which contact pad extends transversely beyond the sides of pillar-like members and spaced from adjacent contact pads.
2. The charge storage target electrode specified in claim 1, wherein said electrically conductive base layer is transmissive to input radiations in the form of light or electrons and serves as the input side of said electrode.
3. The charge storage target electrode specified in claim 1, wherein said p-n junction is reverse biased during operation.
4. The charge storage target electrode specified in claim 1, wherein said pillar-like members have a cross-sectional area at the base portion upon the conductive base layer greater than the top portion contacting the contact pad.
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