专利汇可以提供Preparation of semiconductor device专利检索,专利查询,专利分析的服务。并且PURPOSE:To prevent the self-blending of a buried layer by a method wherein poly- Si is laid on a Si substrate with a dense buried layer and a single crystal is made by selectively applying energy beams in such a way that impurities are diffused into the poli-Si melted out of the buried layer. CONSTITUTION:A field oxide film 12 and an N layer 11 are formed on a P type Si 10, and poly-Si 13 without an additive is placed on the surface, using the CVD method. Next, all the portion excluding the upper part of the N layer is converted into SiO2 14 in order to limit the element region. Then the power and wave length of laser are regulated so that the laser is allowed to irradiate the whole layer 13 and the surface layer 11a of the layer 11 and melt them to form an N type single crystalline layer 13. The thickness of the obtained N layer 15 is not smaller than that of the N layer and the density of the N layer 15 can be correctly determined from the density of the N layer 11 and the volume of the surface layer 11a. After this, an NPN bypolar transistor is made, using the conventional method. With this constitution, since there is no creeping up of the buried layer 11, the layer 15 can be made thinner, while its integration can be improved.,下面是Preparation of semiconductor device专利的具体信息内容。
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