Semiconductor integrated circuit device
专利汇可以提供Semiconductor integrated circuit device专利检索，专利查询，专利分析的服务。并且PURPOSE:To increase the integration and the performance of a semiconductor integrated circuit device by forming a buried layer of a bipolar device of oxidized film isolation type in a configuration that a low density region is formed on a high density layer, thereby reducing the creep-up of the buried layer into an epitaxial layer. CONSTITUTION:After a high density N type buried layer 2 is formed in a region forming, for example, a transistor of a P type substrate 1, a P type epitaxial layer 3 of higher density than the substrate 1 is formed on the surface. Then, the second buried layer 4 of lower density than the layer 2 is formed on the layer 2 in the layer 3, and an N type layer 5 is epitaxially grown. Subsequently, an oxidized film 6 is formed on the isolated region, a base region 7, an emitter region 8 and a collector contact region 8' are then formed, an electrode 9 is formed, and an IC device is formed. Thus, the low density region 4 is formed on the layer 2, thereby reducing the creep-up of the buried layer, and accordingly the device in which the epitaxial layer 5 is reduced in thickness can be formed.，下面是Semiconductor integrated circuit device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 一种纵向高压功率双极结型晶体管及其制造方法 | 2020-05-08 | 137 |
| 一种新型智能车位锁 | 2020-05-08 | 377 |
| 高压ESD保护器件、电路及装置 | 2020-05-11 | 881 |
| 一种双向开断的混合式直流断路器 | 2020-05-11 | 28 |
| 用于晶体管单元电路故障诊断的虚拟仿真实验方法 | 2020-05-11 | 730 |
| 一种低损耗模块化多电平直流直流变换器及其子模块 | 2020-05-08 | 286 |
| 变压器模型的仿真方法、控制方法、电子设备及存储介质 | 2020-05-11 | 251 |
| 自供电控制电路及控制方法以及开关电源电路 | 2020-05-11 | 112 |
| 具有加强结构的边缘终端装置 | 2020-05-08 | 524 |
| 一种高兼容性一拖二并联逆变感应加热系统 | 2020-05-11 | 375 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
