Semiconductor device
专利汇可以提供Semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To restrict unevenness of noise characteristic and Hfe of a lateral type bipolar transistor by a method wherein respective junction faces of an emitter and a collector are formed in full-cheeked shapes, and the base length is shortened in the deep part. CONSTITUTION:An N type epitaxial layer 2 on a P type Si substrate 1 is isolated by a P type layer 3, and an SiO2 mask 62 is applied and diffusion is performed to form the first P type emitter 4 and the first collector 5. The mask 62 is removed, an N type epitaxial layer 70 is accumulated thereon, an SiO2 mask 63 having narrow openings is applied and diffusion is performed to accumulate the second P type emitter 9, the second collector 10, the second step isolation layer 8 respectively on the first layer. Then an SiO2 layer 64 is formed by vapor growth, openings are formed and Al electrodes 11-13 are provided. By this constitution, because carriers injected from the emitter are conducted inside of the substrate without being conducted in the surface of the substrate having many surface states, swing of the collector current or increase of the base current are not generated and unevenness of noise characteristic and Hfe can be restricted easily.，下面是Semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
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| 用于电膜工艺中非对称极性反转的方法和设备 | 2020-05-08 | 245 |
| 一种新型高性能线性功率放大器 | 2020-05-11 | 918 |
| 变压器模型的仿真方法、控制方法、电子设备及存储介质 | 2020-05-11 | 251 |
| 一种基于双极型工艺的轨到轨输入与输出运算放大器 | 2020-05-11 | 633 |
| 具有加强结构的边缘终端装置 | 2020-05-08 | 524 |
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