Semiconductor device and its manufacture
专利汇可以提供Semiconductor device and its manufacture专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain the complemetnary type device in few processes by forming a PNP bipolar transistor while utilizing a forming process of a bipolar NPN transistor in the cnventional structure. CONSTITUTION:P layes 4, 5 are formed to an N epitaxial layer 3 on a P type Si substrate 1 with an N buried layer 2, and connected to the substrate 1. N layers 6, 7 are shaped to the inside of the P layer 4 and the N layer 3 above the buried layer, P layers 8, 9, 10 are each molded into the P layer 4, the N layer 6 and the N layer 3 above the buried layer 2, and N layers 11, 12 are formed selectively to the N layer 6 and the P layer 10. Thus, the layers 4-6-8 and the layers 3-10-12 respectively constitute the bipolar type PNP and NPN transistors. The surface is coated with an oxide film, an electrode is attached and the complementary type device is completed. According to this constitution, processes can be decreased as compared to conentional devices, frequency cutoff is higher than a conventional substrate collector type transistor and a high-frequency characteristic is improved largely.，下面是Semiconductor device and its manufacture专利的具体信息内容。
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