专利汇可以提供Semiconductor device专利检索,专利查询,专利分析的服务。并且PURPOSE:To form guard rings in narrow width and to permit high integration by performing oxidating isolation after forming diffusion layers serving as guard rings at concave sections provided for the oxidating isolation in an LSI incorporated a Schottky barrier diode (SBD). CONSTITUTION:An SiO2 film 4 and an Si3N4 film 5 are stacked on an N epitaxial layer 3 to form concave sections 6 by using the film 5 as a mask and shallow P type diffusion regions 7 are uniformly formed in the concave sections 6 and the depth of the regions 7 prescribes guard rings for an SBD. Next, the film 5 is used as a mask by keeping the film 5 intact and Si in the concave sections 6 is selectively oxided to grow SiO2 layers reaching as far as a substrate 1 and isoplanar structure is formed. Next, high concentration N regions 2a, 2b for taking out electrodes are formed by selectively etching the film 4, furthermore, P type and N type regions 9, 10 are formed at the part forming an N-P-N bipolar transistor and electrodes 11-15 are formed by patterning Al to compose an SBD with guard rings.,下面是Semiconductor device专利的具体信息内容。
标题 | 发布/更新时间 | 阅读量 |
---|---|---|
一种用于直流电网的组合限流型直流断路器 | 2020-05-11 | 639 |
电流采样方法和电流采样电路 | 2020-05-11 | 364 |
用于晶体管单元电路故障诊断的虚拟仿真实验方法 | 2020-05-11 | 730 |
电器件晶片 | 2020-05-08 | 412 |
一种三维的高电压电路结构及紧凑型Marx发生器 | 2020-05-11 | 860 |
一种低损耗模块化多电平直流直流变换器的故障穿越方法 | 2020-05-11 | 662 |
基于负阻效应器件实现磁电阻比值放大的电路结构 | 2020-05-08 | 764 |
换流器MMC及基于MMC的直流故障隔离方法和系统 | 2020-05-08 | 92 |
一种新型高性能线性功率放大器 | 2020-05-11 | 918 |
基于三管五电平拓扑的单相功率因数校正电路 | 2020-05-08 | 132 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台,是提供专利分析,专利查询,专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据,免费查、免费专利分析。
专利汇分析报告产品可以对行业情报数据进行梳理分析,涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度,系统通过AI智能系统对图表进行解读,只需1分钟,一键生成行业专利分析报告。