Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To enable to significantly improve the reliability of a semiconductor device, the manufacturing yield thereof and the working efficiency by the device by a method wherein, after patterns were formed on the back surface of a semiconductor wafer using resists, an oxygen plasma treatment is performed. CONSTITUTION:A wafer 1, on the surface of which beam lead-type semiconductor elements have been formed, is turned inside out and the wafer 1 is pasted together on a flat plate 5 using a wax 4. Patterns are formed on the back surface of the wafer 1 using resists 2. A wafer 11 is set in a plasma device 17, an oxygen plasma treatment is performed and organic substances remaining on a silicon substrate surface 20 are removed. The wafer 11 is set on a carrier 23 for the exclusive use of etching, the carrier 23 is dipped in the mixed acid liquid 21 of an etching vessel 22 and the wafer 11 is selectively removed using the patterns of the resists 12 of the wafer 11 respectively as a mask for being isolated into pellets 25. A wax 14 is melted and the pellets 25 are separated from a flat plate 15 by an absorption jig, are cleansed and are lined on another flat plate 28.，下面是Manufacture of semiconductor device专利的具体信息内容。
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| 一种双层膜内电子电路结构体 | 2020-05-11 | 29 |
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