Semiconductor optical amplifier
专利汇可以提供Semiconductor optical amplifier专利检索，专利查询，专利分析的服务。并且PURPOSE: To attain large-slace integration by setting the optical length between an input and an output surface so that the resonance wavelength of a resonator is not one of specific wavelengths.
CONSTITUTION: A p type dopant such as Zn is diffused in a periphery except an active area 16 to form ap type area 22. Therefore, while a quantum well other than the active area 16 is destroyed, a p-n junction 17 is formed. Then a window 18 for light incidence on the active area 16 or light output is bored, and a reflection preventive film 19 of SiN, etc., a p-side electrode 20, and further an n-side electrode 21 are adhered. In such a case, the resonance wavelength λR needs to be between wavelengths λmin and λmax having an induction emission gain, namely, should not be outside the range between the wavelengths λmin and λmax so that the amplifier functions as an optical amplifier. Consequently, the power consumption can be made sufficiently small and the large- scale integration is made possible.
COPYRIGHT: (C)1992,JPO&Japio，下面是Semiconductor optical amplifier专利的具体信息内容。
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