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Semiconductor integrated circuit device

阅读:1发布:2022-10-02

专利汇可以提供Semiconductor integrated circuit device专利检索,专利查询,专利分析的服务。并且PURPOSE:To prevent a latchup by connecting a Schottky barrier diode between a region applied with the lowest or highest potential except a semiconductor substrate potential and an other region applied with a potential except a semiconductor substrate potential. CONSTITUTION:An N-well 2 secured to a ground potential GND by an N-type diffused layer 4, and an N-well 3 secured to VCC potential by an N-type diffused layer 5 are formed on a P-type substrate 1 secured to -VSS. A P-type diffused layer 6 secured to the potential GND is provided in the well 3. A Schottky barrier diode D1 is connected between the layers 6 and 5. According to the construction, even if -VSS is applied previously from the VCC, the potential of the VCC is clamped in the forward characteristic of the diode D1. Accordingly, it can prevent a danger of causing a latchup.,下面是Semiconductor integrated circuit device专利的具体信息内容。

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