Semiconductor device
专利汇可以提供Semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To improve a step coverage in a minute contact region while preventing the breakage of a junction, and to increase the degree of integration by interposing a metallic layer being in contact in an ohmic manner in the contact region and applying and forming an aluminum wiring layer on the metallic layer. CONSTITUTION:An insulating layer 11 formed on a substrate is bored, and windows for leading out electrodes are bored and treated to form contact regions 12. A silicide or a nitride consisting of a high melting-point metal shaping a barrier layer 13 is grown, and an Al wiring layer 14 is formed on the barrier layer 13. Consequently, a steep stepped section is removed, and a reaction between Si and Al and a reaction between Al and an insulator are inhibited and a contact region in desired width is obtained. Accordingly, an emitter electrode 15, a base electrode 16 and a collector electrode 17 are obtained by patterning the barrier layers 11 grown on the substrate in a sputtering manner and the Al layer 14, and a bipolar semiconductor element aiming at the increase of the degree of integration is acquired.，下面是Semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
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| 一种蓄热电锅炉负荷参与风电消纳的日前市场交易方法 | 2020-05-11 | 49 |
| 一种基于自动化数据质量分析与稽核系统 | 2020-05-11 | 328 |
| 根据资产标记化的当事人之间的资产交易系统及方法 | 2020-05-11 | 574 |
| 移动式黄曲霉毒素检测仪 | 2020-05-12 | 78 |
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