最新美国发明专利第2013-10-01期 - 专利汇|PatentHub专利检索|专利查询网|发明专利查询分析

Document	Document Title
US08547227B2	RF communication device with energy enhancement A method of operating a radio frequency (RF) communication device includes internally storing energy received by the RF communication device, and using that energy to enhance communication by the RF communication device upon occurrence of a predetermined event. The energy received by the RF communication device may be energy transmitted by a shelf or other display unit that an object with the RF communication device is located on. The predetermined event may be any of a wide variety of events. The energy storage may be accomplished in a battery, capacitor, or other energy storage device. The use of energy to enhance communication may be used to provide increased power for sending, receiving, or detecting signals. The enhanced power may be provided continuously, and/or may include periods of power enhancement alternating with periods of non-enhancement.
US08547222B2	System and method of tracking the movement of individuals and assets A monitoring system is provided, by which location data and possibly other information from a wireless personal tracking device carried by an individual is transmitted to an administrative hub for processing and action according to defined rules. Simultaneous monitoring of a plurality of individuals with diverse tracking units and effective event recording and reporting can be implemented.
US08547221B2	Health data collecting system and semiconductor device Conventionally, people have to go to the place where a measurement instrument for health data is, to obtain health data and the like. Further, even when using a portable measurement instrument, people have to manage data by themselves, thus health data cannot be managed rapidly. According to the invention, a modulating circuit, a demodulating circuit, a logic circuit, a sensor circuit, and an antenna circuit are provided over an insulating substrate, thereby data sensed by the sensor circuit is transmitted wirelessly. According to the invention, health data on the living body (for example a human body) is sensed and can be rapidly detected.
US08547219B2	Automotive brake light with graduated display An automotive brake light system producing a graduated display according to the level of vehicle deceleration as sensed by an onboard piezoelectric accelerometer. Taillight assemblies are divided into segments which are illuminated in sequence to produce a graduated display. The vehicle anti-lock brake system may be connected into the system to provide a special lighting effect such as blinking the taillights during a panic stop condition.
US08547213B2	Remote control system and remote control method There is provided a remote control system which changes the functions corresponding to a specific operation unit provided for a controlling apparatus in accordance with distance, thereby improving the convenience for a user. The remote control system includes a controlled apparatus such as a TV set and a controlling apparatus such as a remote controller which remotely controls the controlled apparatus. A measuring unit measures the distance between the controlled apparatus and the controlling apparatus. A changing unit changes the functions to be executed when a specific one of a plurality of operation units provided for the controlling apparatus is operated, in accordance with the measured distance.
US08547211B2	Route retrieval apparatus and navigation apparatus A route retrieval apparatus is disclosed. The route retrieval apparatus includes a storage component, a first correction component, a second correction component and a retrieval component. The storage component stores therein probe information to specify fuel consumption in each section, the probe information having been collected from probe vehicles. The first correction component corrects gradient information of each section based on the specified fuel consumption in the each section. The second correction component corrects a fuel cost of each section based on the gradient information corrected by the first correction component. The retrieval component retrieves, by using the fuel cost of the each section corrected by the second correction component, a route with a lowest total of the fuel costs from a departure point to a destination point.
US08547210B2	Shift stage display device The shift position display device includes a control section configured to automatically shift a shift position by operating actuators based on a shift change command. A gear position display section is configured to display a condition of an automatic transmission based on the display command of the control section. A failure detection unit is configured to detect a failure of the automatic transmission. The control section is configured to switch display of the gear position display section from a lighting display of a numerical figure to a display for failure occurrence notification. The control section is also configured to determine whether the failure is a failure in which traveling is possible or a failure in which traveling is possible when a predetermined limitation is met. The control section is also configured to switch from the display for failure occurrence notification to a shift position.
US08547208B2	Electronic device with remote control function An electronic device includes a storage unit, a sound signal receiving unit, a remote signal generating unit, a processing unit, and a transmitting unit. The control table records RC devices, sound parameters, and control commands. Each RC device is associated with at least one sound parameter. Each sound parameter corresponds to one control command. The sound signal receiving unit receives sound signals. The processing unit determines a sound parameter according to the received sound signals, searches in the control table to determine the control command the sound parameter corresponding to according to a selected RC device, and controls the remote signal generating unit to generate a remote signal corresponding to the determined control command. The transmitting unit transmits the remote signal to the selected RC device.
US08547205B2	Anonymous authentication method based on pre-shared cipher key, reader-writer, electronic tag and system thereof An anonymous authentication method based on a pre-shared key, a reader-writer, an electronic tag and an anonymous bidirectional authentication system are disclosed. The method comprises the following steps: 1) a reader-writer sends an accessing authentication requirement group to the electronic tag; 2) after the electronic tag receives the accessing authentication requirement group, an accessing authentication response group is constructed and sent to the reader-writer; 3) after the reader-writer receives the accessing authentication response group, an accessing authentication confirmation group is constructed and sent to the electronic tag; 4) the electronic tag carries out confirmation according to the accessing authentication confirmation group.
US08547204B2	Information processing apparatus, power-supply control method, program, and power supply control system An information processing apparatus includes: a first connection section to which a first power-supply device is connected; a second connection section to which a second power-supply device is connected; a setting determiner that determines whether or not identification information is to be set for each power-supply device on the basis of connection states and setting control information; an authenticator that selectively obtains, when the setting determiner determines that identification information is not to be set, identification information from the power-supply devices connected to each connection section and that authenticates the obtained identification information; an identification-information setter that causes, when the setting determiner determines that identification information is to be set, unique identification information to be set for each power-supply device; and a processor that selectively performs executable power-supply-related processing on the basis of a result of the authentication or the identification-information setting and of processing control information.
US08547202B2	RFID tag and operating method thereof An RFID tag and a method of operating the RFID tag are provided. The RFID tag comprises a memory block that stores at least one predetermined authorization code associated with an RFID reader. In this method, according to the predetermined authorization code and an approval request transmitted from the RFID reader, it is determined by the RFID tag whether the RFID reader is authenticated. When the RFID reader is not authenticated, the RFID tag is controlled to not respond to a subsequent request transmitted from the RFID reader. As a result, the risk that data in the RFID tag may be illegally acquired by an unauthorized RFID reader is reduced.
US08547201B2	Protective-control measuring system and device and data transmission method According to one embodiment, when sending a transmission target main data 21, an authentication-tag generator unit 13 generates an authentication tag 23 by using a main data 21 and a key data 22 stored in a key-data storage unit 12. A transmitter/receiver unit 14 adds the authentication tag 23 to the main data 32 sends as a transmission data. When receiving the received data 24a, the transmitter/receiver unit 14 divides the received data into a main data 21a and an authentication tag 23a. The authentication-tag generator unit 13 generates an authentication tag 23b for comparison. A received-data authentication unit 15 determines whether or not those the received authentication tag 23a and the authentication tag for comparison 23b match with each other. A different key data is used every time upon the authentication-tag generation and use time of each key data during a set period is restricted.
US08547195B2	Protective element and secondary battery device A protection element and a secondary battery device employing the protection element are provided for stably retaining a flux on a soluble conductor at a predetermined position, so as to enable appropriate blowout of the soluble conductor in the event of an abnormality. The protection element has a soluble conductor which is disposed on an insulation baseboard, and which is connected to a power supply path of a device targeted to be protected, and which causes a blowout when a predetermined abnormal electric power amount is supplied. A flux is coated on a surface of the soluble conductor, and an insulation cover member is mounted on the baseboard and covers the soluble conductor. The protection element also includes a stepped portion for retaining the flux at a predetermined position in contact with the flux, and the stepped portion is formed opposite to the soluble conductor on an interior face of the insulation cover member.
US08547194B2	Inductance module and base holder thereof An inductance module includes a base holder and an inductance element. The inductance element is installed on a bottom base of the base holder and then a coil of the inductance element is electrically connected to the conductive pins of the bottom base. A positioning element of the base holder is fabricated on the bottom base to fix the inductance element and then the bottom base is installed in an opening of a circuit board, thus reducing the height of installing the inductance module on the circuit board after fabricating the base holder and the circuit board. The positioning element is designed like a barb to increase strength of fabricating the positioning element on the bottom base instead of using an adhesive, thus reducing working hours and simplifying working process.
US08547190B2	Tripping apparatus, particularly for circuit breakers At least one embodiment of the invention relates to a tripping apparatus, particularly for circuit breakers, which includes at least one controllable tripping magnet having an armature that is operatively connected to a downstream tripping gear, which engages in a tripping mechanism that acts on the circuit breaker and is coupled to a preloaded spring serving as a force amplifier. According to at least one embodiment of the invention, the tripping mechanism includes a camshaft having a plurality of cam lobes, wherein at least one actuating device is associated with each cam lobe having an offset rotational angle, and wherein, when tripped, at least two actuating processes associated with the respective actuating means take place consecutively, so that the full spring force is transmitted by way of the camshaft to at least one of said actuating means so as to perform the relevant actuating process.
US08547186B2	Compact balun The present invention is directed to a compact balun device that includes an unbalanced port and a set of balanced differential ports. A first set of coupled transmission line structures is coupled to the unbalanced port and one port of the set of balanced differential ports. The first set of coupled transmission line structures is characterized by at least one device parameter and a first length that is substantially equal to a quarter of a wavelength (λ). The wavelength (λ) corresponds to a first frequency. A second set of coupled transmission line structures is coupled to another port of the set of balanced differential ports. The second set of coupled transmission line structures is characterized by the at least one device parameter and a second length that is substantially equal to the quarter of a wavelength (λ). The wavelength (λ) corresponds to the first frequency. A plurality of interconnections couples the first set of coupled transmission line structures and the second set of coupled transmission line structures. The plurality of interconnections are configured such that the compact balun operates at a reduced operating frequency, the reduced operating frequency being selected from a range of frequencies by varying at least one device parameter. The range of frequencies is approximately between one-sixth of the first frequency and one-half the first frequency.
US08547184B2	High-frequency coupler and communication device A high-frequency coupler includes a ground, a coupling electrode which faces the ground and is supported so as to be separated by a negligible height with respect to a high-frequency signal, a resonating unit for increasing a current flowing into the coupling electrode, a supporting unit which is connected to the resonating unit, and a short-circuiting unit which short-circuits the tip portions of the coupling electrode, in which an infinitesimal dipole constituted by a line connecting the center of the charges accumulated in the coupling electrode and the center of mirror-image charges accumulated in the ground is formed, and the high-frequency signal is transmitted toward a high-frequency coupler of a communication partner so that the angle θ formed in the direction of the infinitesimal dipole is substantially 0 degrees.
US08547183B2	Voltage controlled oscillator There is provided a voltage controlled oscillator that is compact and can be manufactured at low cost. The voltage controlled oscillator is structured to include: a resonance part including a variable capacitance element and an inductance element, the variable capacitance element having a capacitance that varies according to a control voltage for frequency control input from an external part, and a series resonant frequency of the resonance part being adjusted according to the capacitance; an amplifying part amplifying a frequency signal from the resonance part; and a feedback part including a capacitance element for feedback and feeding the frequency signal amplified by the amplifying part back to the resonance part to form an oscillation loop together with the amplifying part and the resonance part, wherein the amplifying part is provided in an integrated circuit chip, and the resonance part and the capacitance element for feedback are formed as circuit components separate from the integrated circuit chip. The circuit components are selected according to an oscillation frequency.
US08547178B2	Single-event upset hardened ring oscillator A ring oscillator is disclosed. The ring oscillator includes a first tri-path inverter, a second tri-path inverter and a third tri-path inverter. The second tri-path inverter is connected to the first tri-path inverter. The third tri-path inverter is connected to the first and second tri-path inverters to provide feedback for oscillations.
US08547177B1	All-digital switched-capacitor radio frequency power amplification Disclosed herein is an improved power amplifier, referred to as a Switched-Capacitor Radio Frequency Power Amplification (SCPA). The SCPA may be fabricated with scale CMOS technology. The SCPA may include a plurality of stages, each stage including a storage device, a switch, and selection circuitry. Various combinations of the stages may produce an output signal based on characteristics of a reference signal to be amplified. The output from the stages may be combined to create an amplified approximate square wave. The amplified square wave may be filtered by output circuitry such as a bandpass matching circuit, resulting in an output signal that may be an amplified version of the reference signal.
US08547167B2	Die power structure A die including a first set of power tiles arranged in a first array and having a first voltage; a second set of power tiles arranged in a second array offset from the first array and having a second voltage; a set of power mesh segments enclosed by the second set of power tiles and having the first voltage; a first power rail passing underneath the set of power mesh segments and the first set of power tiles; and a set of vias operatively connecting the power rail with the set of power mesh segments and the first plurality of power tiles.
US08547165B1	Adjustable second-order-compensation bandgap reference A voltage reference is produced from PTAT, CTAT, and nonlinear current components generated in isolation from each other and combined to create the voltage reference.
US08547162B2	Integration of MOSFETs in a source-down configuration An output stage for a switched mode power supply has a high-side switch having a first power FET and a first speed-up FET monolithically integrated onto a first die. A low-side switch has a second power FET and a second speed-up FET monolithically integrated onto a second die. A semiconductor device has the power FET and the speed-up FET monolithically integrated in a “source-down” configuration. A method of operating an output stage of a switched mode power supply alternately turns on and off a high-side and a low-side switch and drives at least one of the switches with a speed-up FET monolithically integrated with the switch.
US08547160B2	Sampling There is disclosed current-mode time-interleaved sampling circuitry configured to be driven by substantially sinusoidal clock signals. Such circuitry may be incorporated in ADC circuitry, for example as integrated circuitry on an IC chip. The disclosed circuitry is capable of calibrating itself without being taken off-line.
US08547154B2	Programmable duty cycle selection using incremental pulse widths A method and device for generating a waveform according to programmable duty cycle control bits from a divided frequency reference signal. The device may include: a timing circuit that inputs a CLOCK signal having a 50% duty cycle to a divider, whose output varies over a plurality of divide-by-n settings; and a waveform generator. The waveform generator may, after a last low clock pulse is counted for a current evaluative cycle and before a beginning of a next evaluative cycle, shift a prior duty cycle waveform by ½ of a CLOCK cycle, to provide an incremented duty cycle for the waveform. Alternatively, the waveform generator may increment a gating signal from an adder, which determines an onset of an inoperative or low portion of the programmed duty cycle.
US08547153B2	Delay locked loop A delay locked loop in accordance with some embodiments of the inventive concept may include a delay signal generation part generating a first delay signal having a first phase and a second delay signal having a second phase by delaying a reference signal on the basis of a delay control signal; a phase synthesizing part generating at least one third signal having a third phase using the first delay signal and the second delay signal; and a phase detection part generating a control code by comparing the reference signal with each of the first delay signal, the second delay signal and the third signal.
US08547151B2	Phase-locked loops that share a loop filter A die stack of an integrated circuit includes a plurality of dies. Each die in the die stack includes a phase lock loop (PLL). The PLLs in each of the dies share a loop filter and other corresponding circuits.
US08547150B2	Phase-locked loop with two negative feedback loops A phase-locked loop with two negative feedback loops including: a phase frequency detector which includes phase difference between the input clock and the feedback clock in a frequency-phase-locked loop and outputting up or down signals based on the phase difference; a charge pump outputting the current proportional to the up and down signals outputted from the phase frequency detector; a loop filter outputting the voltage by filtering the current outputted from the charge pump; a voltage controlled oscillator outputting the frequency based on the voltage outputted from the loop filter; a divider dividing the frequency outputted from the voltage controlled oscillator and feedbacking to the phase frequency detector; a frequency-voltage converter generating the voltage corresponding to the frequency outputted from the voltage controlled oscillator, and suppressing noise of the voltage controlled oscillator by feedbacking the generated voltage to the voltage controlled oscillator.
US08547148B2	Semiconductor device with dynamically calibrated oscillator A digital compensation phase locked loop circuit of a semiconductor device includes a phase locked loop circuit including a voltage controlled oscillator having capacitors at oscillation nodes and consecutively controlled by an applied voltage, and a digital compensation circuit which variably controls the capacitors at the oscillation nodes of the voltage controlled oscillator in accordance with an input phase difference. A gain of the conventional voltage controlled oscillator whose gain is determined by an applied voltage is discretely changed by a control signal of the digital compensation circuit. The digital compensation circuit dynamically controls the gain so as to secure the optimum phase margin by applying a load (capacitor) to the oscillation node of the voltage controlled oscillator with respect to a phase lead and decreasing the load (capacitor) with respect to a phase delay.
US08547146B1	Overcurrent based power control and circuit reset In one embodiment, a circuit is provided. The circuit includes a load configured to receive power through a power path. The circuit also includes a current monitor configured to sense a current draw on the power path. A switch on the power path is coupled in series between the load and a power rail, and a control circuit is coupled to the current monitor. The control circuit is configured to set the switch to a non-conducting state and to send a reset signal to the load if the current monitor senses an overcurrent on the power path.
US08547145B2	Power-up signal generation circuit of semiconductor apparatus A power-up signal generation circuit of a semiconductor apparatus includes a driver configured to generate a power-up signal in response to a first voltage. The power-up signal generation circuit may also comprise a power control unit configured to provide the first voltage or a second voltage as a power supply voltage to the driver in response to the power-up signal.
US08547138B2	Semiconductor device with buffer and replica circuits A semiconductor device includes a first input buffer adjusting a logic threshold voltage, a first replica circuit, a first reference voltage generating circuit, and a first comparator circuit. The first replica circuit is identical in circuit configuration to the first input buffer. The first replica circuit has an input and an output connected to the input. The first replica circuit generates the logic threshold voltage as an output voltage. The first reference voltage generating circuit generates a first reference voltage. The first comparator circuit compares the logic threshold voltage as an output voltage of the first replica circuit to the first reference voltage to generate a first threshold adjustment signal. The first comparator circuit supplies the first threshold adjustment signal to the first input buffer and the first replica circuit. The first threshold adjustment signal allows the first input buffer to adjust the logic threshold voltage.
US08547137B2	Integrated circuit device and data transmission system An integrated circuit device includes: a plurality of I/O cells coupled to an external apparatus; a control signal generator configured to detect a phase relationship among data signals respectively input into the plurality of I/O cells and to generate control signals based on the phase relationship; and a drive controller circuit configured to control the driving of the I/O cells in response to the control signals.
US08547136B1	Logic block protection system An integrated circuit (IC) with an Intellectual Property (IP) protection system is disclosed. The IC includes a memory array operable to store a key. The key is a sequence of binary bits. The IC also has an IP block operable to perform a function. The IP block is defined through the circuitry of the IC. The IP block is also operable to be activated with the key. The IC has an interconnection operable to couple the memory array to the IP block. The interconnection transfers the key from the memory array to the IP block. A method to configure and to operate the IC is also provided.
US08547133B2	Semiconductor device, circuit board device, and information processing device In a semiconductor device, a selector selects a different reference voltage depending on whether the impedance of a transmitter or of a receiver is to be adjusted, and causes a reference voltage generator to generate the selected reference voltage. The reference voltage generator generates the reference voltage selected by the selector and applies the generated reference voltage to an impedance adjuster. The impedance adjuster adjusts the impedance of the transmitter and the impedance of the receiver, separately from each other, in accordance with the input reference voltage.
US08547130B2	Method and device for detecting foreign particle in liquid crystal display panel A method for detecting a foreign particle trapped between substrates of a liquid crystal display panel, by which a potential short caused by the particle can be made into a short with reliability, and thus it is possible to make a display defect manifest itself that is caused by the particle. The method is for detecting the presence of a foreign particle trapped between flexible substrates (21, 26) of a liquid crystal display panel (20), between the substrates liquid crystals filled, and the method includes making the panel pass between supporting rollers (3) arranged to support one surface of the panel, and a pressing roller (4) disposed at a position opposed to a space between the supporting units and arranged to press the other surface of the panel, bending the panel, and displacing the substrates with respect to each other in their surface directions.
US08547129B2	Connector test system A connector test system includes a number of adapters, a number of testers, and a motherboard. Each tester is connected to a corresponding one of the adapters. The motherboard is configured for connecting to the connector. The motherboard includes a number of pins arrayed in a 9 by 10 matrix. The pins includes a number of signal input pins and a number of grounding pins, each signal input pin is connected to a corresponding adapter.
US08547125B2	Test apparatus and test module Provided is a test apparatus for testing at least one device under test, including: a test module that includes a plurality of test sections, the plurality of test sections testing the device under test by exchanging signals with the device under test; and a plurality of test control sections that control the plurality of test sections, where the test module includes the plurality of test sections; a setting storage section that stores setting as to which of the plurality of test control sections should be associated with each of the plurality of test sections; and an interface section that is connected to the plurality of test sections, provides an access request issued from one of the plurality of test control sections and directed to the test module, to a test section associated with the test control section, and is able to set, independently for each of the plurality of test sections, which of the plurality of test control sections should control the test section.
US08547123B2	Storage device testing system with a conductive heating assembly A test slot assembly is provided for testing a storage device. The test slot assembly is configured to receive and support a storage device, or a storage device supported by a storage device transporter. The test slot assembly also includes a conductive heating assembly. The conductive heating assembly is arranged to heat a storage device by way of thermal conduction.
US08547122B2	Temperature measurement of active device under test on strip tester A plurality of devices under test (DUT) are arranged in a strip tester having a temperature controlled heater block. Each DUT has a respective set of electrical test probes and a thermally conductive test probe for electrically and thermally coupling, respectively, of the strip tester to the DUTs. Temperature measurement of each of the plurality of DUTs is performed by a temperature measuring device. The temperature measuring device can be part of the test board of the strip tester and will be in thermal communications with the DUT through the thermally conductive test probe, or temperature of the DUT can be measurement with an RTD embedded in the thermally conductive test probe, thereby providing faster thermal response time.
US08547121B2	Quality control process for UMG-SI feedstock A quality control process for determining the concentrations of boron and phosphorous in a UMG-Si feedstock batch is provided. A silicon test ingot is formed by the directional solidification of molten UMG-Si from a UMG-Si feedstock batch. The resistivity of the silicon test ingot is measured from top to bottom. Then, the resistivity profile of the silicon test ingot is mapped. From the resistivity profile of the silicon test ingot, the concentrations of boron and phosphorous of the UMG-Si silicon feedstock batch are calculated. Additionally, multiple test ingots may be grown simultaneously, with each test ingot corresponding to a UMG-Si feedstock batch, in a multi-crucible crystal grower.
US08547120B1	High speed AC current source An apparatus for testing a DUT includes a pulsed signal source; a hard current-limiter adapted to be operated in series relationship between the pulsed signal source and the DUT; and a voltage sensor adapted to sense a voltage across the DUT in response to the pulsed signal source.
US08547117B2	Capacitive touch panel A capacitive touch panel can select a way of voltage control with a high degree of detection accuracy according to operating environment. In response to approach of an input unit, the stray capacitance of the sensing electrode the input unit approached increases. Accordingly, charge and discharge of the stray capacitances of a plurality of sensing electrodes are controlled, and a sensing electrode the potential change of which is made slow by the increase in stray capacitance and resultant increase in time constant is detected as a sensing electrode the input unit approached. The stray capacitance of a sensing electrode can selectively be controlled either by the charge control or by the discharge control, and optimum one of the controls is selected according to operating environment.
US08547113B2	Capacitive touch panel Changes of the stray capacitances of a large number of sensing electrodes can be detected simultaneously. Further, even if a stray capacitance changes slightly, an input operation to a sensing electrode can be detected based on elapsed time until the electric potential of the sensing electrode becomes the same as a threshold potential. The stray capacitance of a sensing electrode and a resistor of the sensing electrode form a CR time constant circuit. Charge or discharge of the stray capacitance of the sensing electrode is controlled while a rest time in a predetermined time ratio is set. A stray capacitance that slightly increases in response to an input operation made near a sensing electrode can be detected by detecting the stray capacitance in extended elapsed time until the electric potential of the sensing electrode becomes the same as the threshold potential.
US08547108B2	Universal mate-in cable interface system The present document describes an assembly for connecting a test unit to a wiring harness or equipment to be tested, and a method for testing using the assembly. The assembly may comprise a test box unit, a generic mate-in interface, and at least one specific mate-in interface. The generic mate-in interface is for connection to the test box unit on one end, and to the at least one specific mate-in interfaces at the other end. The mate-in interfaces are for testing different existing wiring harnesses or equipment. Each one of the generic and specific mate-in interfaces has a specific ID. Information relating to the IDs of the connectors and the contact configuration of each mate-in interface is stored in a database of the test unit for identifying the appropriate test contacts that should be used for testing.
US08547101B2	Magnetic resonance imaging device In MRS measurement using magnetic resonance highly precise results are efficiently obtained with coincidence of axes with axes in positioning image. In measurement according to the PRESS method for a plurality of regions each localized (specified) with a set of perpendicularly intersecting three slices, wherein one or two slices are common to the sets of three slices localizing the regions, and slices not common do not intersect, a slice not common to those of a region to be selectively excited is excited with a radio frequency magnetic field of which phase is different by 180 degrees from that of a radio frequency magnetic field used for exciting the region to be selectively excited a number of times equal to the number of common slices, and during the measurement of the region to be selectively excited, a group of regions other than the region to be selectively excited are thermally equilibrated.
US08547099B2	Method and apparatus for accurately adjusting magic angle in NMR Method and apparatus for accurately adjusting the magic angle in NMR. The NMR probe has a uniform magnetic field coil assembly disposed to produce a uniform magnetic field H. The uniform magnetic field H is produced by controlling the currents flowing through the uniform magnetic field coil assembly. The vector sum of the external field B0 and the uniform field H is used to determine a new external magnetic field B0′.
US08547098B2	Magnetic resonance system A magnetic resonance system includes at least one coil and at least one coaxial line connecting the at least one coil to an electronic receive system. The at least one coil includes a preprocessing device that converts the received signals to at least one transmission frequency that is different from a transmit frequency. The coaxial line includes at least one sheath wave barrier with a trap suppressing sheath waves of transmit frequency both on the outside and the inside of a sheath conductor of the coaxial line.
US08547096B2	Simultaneous determination of bitumen and water content in oil sand and oil sand extraction process samples using low-field time-domain NMR A method for quantifying bitumen and/or water in a sample comprising bitumen, water and solids using a time-domain nuclear magnetic resonance pulse spectrometer is provided comprising the steps of: initially saturating the magnetization of the sample so that essentially no magnetization remains in the +Z axis; subjecting the sample to a sequence of radio-frequency pulses optimized for the measurement of bitumen and water in the sample; allowing the recording of the transverse relaxation (T2) echo trains after incremental longitudinal relaxation to produce a raw TD-NMR data set for the sample; and determining the amount of bitumen and water by means of a partial least squares optimization based chemometric model relating TD-NMR data sets obtained from a training set of samples comprising bitumen, water and solids to the training samples' corresponding reference values obtained from a standard analysis method for determining bitumen and water.
US08547093B2	Methods and systems for applying speed correction fits to NMR well logging formation echo data with singular value decomposition A method and system for performing speed correction on nuclear magnetic resonance logging data is provided. The speed correction performed can be done on a representation of echo data received by a logging tool, and then additively applied to the echo data. Such a process can reduce or remove the amplification of noise in the echo data that is common in conventional methods of speed correction.
US08547091B2	Method for measuring resistance of resistor connected with MR element in parallel A measuring method measuring a resistance of a resistor of a magnetic sensor that includes the resistor is provided. The method includes a step of measuring an output voltage of the magnetic sensor in an AC magnetic field, a step of measuring a first combined resistance of the MR element and the resistor in no magnetic field, a step of measuring a second combined resistance of the MR element and the resistor in a constant magnetic field of which a direction and strength are substantially the same as a magnetic field, a step of measuring a third combined resistance of the MR element and the resistor in another constant magnetic field of which a direction and strength are substantially the same as another magnetic field, and a step of calculating the resistance of the resistor based on the output voltage, the first, second and third combined resistance.
US08547089B2	Method of non-destructively testing, a system and a computer program product A method of non-destructively testing a magnetisable conducting object surrounded by a magnetisable layer wherein the field strength of a primary magnetic field that is applied exterior to the magnetisable layer is abruptly changed. A vanishing secondary magnetic field generated by eddy currents induced by the changed field strength of the primary magnetic field is received and the temporal field strength of the received secondary magnetic field is analysed for deriving characteristics of the magnetisable conducting object. Furthermore, a transient tertiary magnetic field exterior to the magnetisable layer when the field strength of the primary magnetic field abruptly changes is applied wherein the orientation of the primary and tertiary magnetic field, respectively, are mutually opposite.
US08547087B2	Magnetic field sensor A magnetic field sensor assembly (401a, 401b) for measuring an angular direction (φ) of a sensed magnetic field (Happl) relative to the assembly, the sensor assembly comprising: a sensor (404a, 404b) of a first type configured to sense an orientation of the sensed magnetic field; a sensor (402, 406) of a second type configured to measure an orientation and a direction of the sensed magnetic field; and processing circuitry (403, 405) connected to each of the magnetic field sensors, the processing circuitry being configured to process output signals from the sensor of the first type to determine an uncorrected sensed magnetic field angle and to apply an offset angle to the uncorrected magnetic field angle dependent on a logical combination of signs of output signals from the sensors of the first and second types.
US08547086B2	Coercivity performance determination device for coercivity distribution magnet There is provided a coercivity performance determination device for a coercivity distribution magnet that is capable of determining, in a short period of time, with precision, and at as low a testing cost as possible, whether or not each part of one coercivity distribution magnet has a coercivity that is equal to or greater than the required coercivity. A coercivity determining device of the present invention comprises: a substantially C-shaped magnetic body; excitation means that generates a magnetic flow in the magnetic body; and a flux meter that measures the residual magnetic flux of the coercivity distribution magnet. Protrusions are provided at corresponding positions on two opposing end faces of the magnetic body, and the coercivity distribution magnet is held between the two protrusions to form an annular magnetic circuit. An external magnetic field generation means is formed by magnetic regions caused by the protrusions and non-magnetic regions comprising the air in the periphery thereof. An external magnetic field that is generated when magnetism flows through the protrusions is adjusted in such a manner that a reverse magnetic field, which comprises the sum of the external magnetic field and the demagnetizing field of the coercivity distribution magnet, corresponds to the coercivity required of each part of the coercivity distribution magnet. The residual magnetic flux when this has acted as the reverse magnetic field is measured with the flux meter to determine coercivity performance.
US08547083B2	Apparatus for determination of the axial position of the armature of a linear motor An apparatus (2;3;4;5) for determination of the axial position of the armature (11) of a linear motor comprises at least one pair of magnetically permeable, annular elements (12;20,21;30,31,34,35;40,41,44,45;48;50,51), which are arranged essentially coaxially and at a short distance (dr;db) from one another, such that an air gap (22;32,36;42,46) is formed between them, in which a magnetic field sensor (23;33,37;43,47;Si) for measurement of the magnetic field (B) in the air gap is arranged.
US08547080B2	Voltage regulator Provided is a voltage regulator capable of preventing a large current from flowing even when a battery (110) is connected with reverse polarity by mistake. The voltage regulator employs a circuit configuration in which a substrate potential (n-well) of an output transistor (103) of the voltage regulator is not fixed to a potential of a VDD terminal, and a power supply of a reference voltage circuit (101) and an error amplifier (102) is not fixed to the VDD terminal.
US08547079B2	Voltage regulator capable of enabling overcurrent protection in a state in which an output current is large Provided is a voltage regulator capable of enabling overcurrent protection in a state in which an output current is large even if an input/output voltage difference is small, without waiting until the output voltage decreases. A sense current that a sense transistor flows is detected by a differential amplifier circuit, and hence, in the state in which the input/output voltage difference is small and the output current is large, the overcurrent protection can be enabled even when the output voltage does not decrease. Further, a good fold-back characteristic can be obtained.
US08547074B2	Sequential switching shunt regulator cell with non-redundant rectifier A sequential switching shunt regulator cell comprising: a power line (PL) for connecting a power source (SA) to a power bus (PB); a shunting (SSW) switch for shunting said power line; and driving means (DM) for opening or closing said shunting switch depending on an error signal (MEA) indicative of a voltage level of said power bus; characterized in that it also comprises: a non-redundant rectifier (D3) connected in series to said power line for disconnecting the power bus from the shunting switch when the latter is closed; and a fault detector (FD) for detecting a short-circuit fault condition of said non-redundant rectifier, and for opening the shunting switch in reply to said condition. Advantageously, the rectifier can be a synchronous rectifier. A solar power regulator comprising a plurality of solar arrays connected to a power bus through respective sequential switching shunt regulator cells of the kind described above.
US08547067B2	Circuit arrangement and method for detecting a charge A circuit arrangement that has an energy source that can provide a charging voltage for charging an electrical energy storage unit in a charging circuit when it is connected to an energy supply, wherein it is possible to represent the charging voltage using an alternating quantity, and that has a capacitor circuit having a first capacitor element, a first valve element, and the energy source, wherein the first capacitor element is charged by the energy source via the first valve element if the charging voltage is negative, so that, if the charging voltage is positive, the voltage over the first capacitor element has the same orientation in the capacitor circuit, in terms of sign, as the charging voltage, and the voltage over the capacitor element.
US08547065B2	Battery management system Apparatus for a modular battery management system with interchangeable slave modules connected to each cell and including a master module controlling and managing the battery system. All the modules receive power through a transfer switch that selectively switches between an external source, an auxiliary source, and the battery. The modules are configured to connect to a cell of the battery for charging and monitoring the cell individually. Each module is electrically isolated from the other modules. The modules are autonomous and shut down the battery and disconnect the module when a critical parameter of the cell is reached. When the battery is in service and a cell parameter approaches the critical level, the master controller instructs the corresponding slave module to charge the cell using battery power. The master module initializes the slave modules to uniquely identify the modules.
US08547063B2	Power supply system for an electronic device A power supply system for an electronic device which includes a power source, a docking mechanism configured to dock a first electronic device, a docking connector configured to provide power from the power source to the first electronic device when it is docked to the docking mechanism, and a power output port configured to provide power from the power source to a second electronic device without having the second electronic device docked.
US08547062B2	Apparatus and system for a battery pack assembly used during mechanical ventilation This disclosure describes methods and apparatus for indicating battery cell status on a battery pack assembly used during mechanical ventilation. Embodiments described herein seek to provide methods for indicating battery cell status on the exposed exterior of a battery assembly pack both when the battery is in use and when the battery is not in use during mechanical ventilation. Embodiments utilize power from the ventilator as well as power from the battery pack itself to light the indicators during periods of battery use and non-use, respectively. Embodiments described herein further seek to provide an apparatus indicating battery cell status on the exposed exterior of the battery pack assembly during mechanical ventilation. Embodiments described herein further seek to provide an apparatus for a battery pack assembly used during mechanical ventilation. Embodiments described herein seek to provide a system for a ventilation system with an inserted battery pack assembly.
US08547061B1	Wireless hotpoint device A wireless hotpoint device includes a main body having a circuit board and a battery arranged therein. The circuit board includes a first control unit, a second control unit connected to the first control unit, and a wireless transmission unit connected to the second control unit. The first control unit controls an input voltage of an external power supply and an output voltage of a battery power of the battery, and informs the second control unit to turn on. The second control unit enables a wireless access via the wireless transmission unit or an access via the Ethernet, and enables a router mode or a network service mode. With these arrangements, the wireless hotpoint device not only enables data access via local or wireless networks, but also supplies electric power for charging other electronic products connected thereto.
US08547059B2	Lock structure for battery charging connector A battery charging connector lock structure that locks a power feeding connector to a receptacle of a power receiving connector. The connector lock structure includes a restriction member that moves between a lock position, in which the restriction member restricts movement of a hook of the power feeding connector to prohibit removal of the power feeding connector from the receptacle, and an unlock position, in which the restriction member releases the hook to permit removal of the power receiving connector. The restriction member includes an extension. A stopper is coupled to the extension of the restriction member and moves the restriction member to the lock position or the unlock position. A drive source moves the stopper to move the restriction member to the lock position. An urging member is arranged on the extension of the restriction member to move the restriction member to the lock position.
US08547057B2	Systems and methods for selective wireless power transfer Exemplary embodiments are directed to selective wireless power transfer. A method may include transferring wireless power to at least one electronic device while varying at least one parameter of the wireless power transfer according to a wireless power transfer scenario.
US08547055B2	Method and apparatus to control electric power consumption A system and method for controlling the electrical power consumption of an accessory device. A power transmission unit is adapted to generate electrical power. The system comprises a first controller, a current sensor and a second controller. The first controller is adapted to control the operation of the accessory device. The current sensor is configured to measure an amount of current being charged and discharged to and from the battery and generate a signal that corresponds to the measured amount of current charged and discharged to and from the battery. The second controller is configured to receive the signal from the current sensor and generate flag signal in response to detecting that current is being charged to the battery. The first controller is further adapted to control the accessory device to consume increased power from the electrical power generated by the power transmission unit in response to the flag signal.
US08547046B2	Door closer with self-powered control unit A door closer with a self-powered control unit is disclosed. The control unit for the door closer includes a drive gear configured to rotate in response to movement of a door, and a chain arranged to cooperate with the drive gear to produce linear motion in response to rotation of the drive gear. At least one gear creates rotational motion from the linear motion of the chain to turn a generator and generate electricity to power the control unit. In some embodiments, a set of clutch gears is disposed between the chain and the gear creating the rotational motion from the chain so that only one direction of the rotational motion is transferred to the generator in response to movement of the door in any direction. The control unit can additionally include a power management circuit to store energy from the generator.
US08547045B2	Method and system controlling an electrical motor with temperature compensation A temperature estimation module estimates a change in temperature of the magnets associated with the rotor of the motor based on an operational magnetic flux strength that is compared to a reference magnetic flux strength determined at a known ambient temperature and for a predetermined operating range of the motor The temperature estimation module or the system establishes a relationship between the estimated change in the temperature and a magnetic torque component of a target output torque of the motor consistent with the predetermined operating range. The current adjustment module or the system adjusts a command (e.g., quadrature-axis current command) for the motor to compensate for shaft torque variation associated with the estimated change in the temperature in conformance with the established relationship.
US08547043B2	Motor control device and electric power steering equipment having the same A motor control device detecting short-circuit and disconnection faults of a power relay includes: a drive circuit of a motor; the power relay having first and second switching elements; a capacitor; a voltage detector detecting a voltage of the first switching element; a charger charging the capacitor; and a controller detects a short-circuit fault of the first and second switching elements according to the detection voltage when the first and second switching elements turn off after the charger charges the capacitor, detects a disconnection fault of the second switching element according to the detection voltage when the first switching element turns off, and the second switching element turns on and detects a disconnection fault of the first switching element according to the detected voltage when the first switching element turns on, and the second switching element turns off.
US08547041B2	Power conversion device A power conversion device comprises a power conversion unit of a three phase full bridge type including upper arm switching devices and lower arm switching devices, and a controller that outputs drive signals to these switching devices. This power conversion device forms alternately a first interval in which the upper arm switching devices and the lower arm switching devices are switched to ON for different phases, and a second interval in which, for all phases, either the upper arm switching devices or the lower arm switching devices are switched to ON, according to electrical angle.
US08547039B2	Conductive polymer actuator device, conductive polymer actuator control device and control method An actuator is provided with a conductive polymer film portion, an electrode, and an electrolyte portion, and by detecting a waveform of a current that flows upon application of a voltage between the conductive polymer film portion and the electrode, a displacement amount of the actuator is detected so that based on the displacement amount thus detected, a voltage is applied to the conductive polymer film portion so that the displacement amount of the actuator is adjusted.
US08547036B2	Solid state light system with broadband optical communication capability Systems and methods are disclosed for use in conjunction with a standardized electrical connector of a conventional light bulb or tube with one or more light emitting diodes (LEDs) electrically coupled to at least one electrical connector compatible with a conventional light connector, wherein the LEDs include at least one multiband-type ultra-wideband (UWB) transceiver having one or more optical channels defined using one or more OFDM bands; and a controller coupled to the LEDs, the controller adjusting LED light output and communicating with the optical network using the optical transmitter and receiver. In other embodiments, the LEDs include at least one optical transmitter and receiver optically coupled to an optical network using at least one LED with a first mode to generate light and a second mode to receive optical transmissions using ambient light.
US08547035B2	Dimmer adaptable to either two or three active wires A dimmer adaptable to either two (H, DH) or three (H, N, DH) active wires includes a first full-wave rectifier (D1, D2, D3, D4) across an AC power hot (H) terminal and a dimmer hot (DH) terminal and a second full-wave rectifier (D1, D4, D5, D6) across the AC power hot (H) terminal and an AC power neutral (N) terminal. The dimmer operates in a two-wire configuration by drawing power through a load when a control circuit is not conducting or in a three-wire configuration, when the AC power neutral (N) terminal is connected, by drawing power from AC power hot (H) and AC power neutral (N) terminals. The dimmer operates according to a first set of preset dim levels when current is flowing through the first rectifier and according to a second set of preset dim levels when current is flowing through the second rectifier.
US08547031B2	Circuit configuration and method for operating at least one first and one second LED A circuit configuration may include an operational amplifier having a plus and a minus input and an output; and a current sensing resistor, whereby the voltage drop across the resistor is coupled to the minus input; a first transistor having a control electrode, a reference electrode and a working electrode, the working-reference electrode path of which is coupled in series to a first and second connection for a first LED between a connection for a supply voltage and the reference potential; a second transistor having a control electrode, a reference electrode and a working electrode, the working-reference electrode path of which is coupled in series to a first and second connection for a second LED between a connection for a supply voltage and the reference potential; a first switch and a second switch coupled in series between the output and the control electrode of the first and second transistor, respectively.
US08547029B2	Dimmable instant start ballast A ballast for dimming a lamp is provided. The ballast includes an inverter circuit for providing a lamp current for energizing the lamp and a dim interface for receiving an input indicative of a selected lighting level. A control circuit is connected to the dim interface for generating a pulse-width-modulated signal having a duty cycle corresponding to the selected lighting level. A switching network is connected to the control circuit for receiving the pulse-width-modulated signal. The switching network operates between a conductive state and a non-conductive state as a function of the pulse-width-modulated signal. An impedance device is connected across the switching network and is configured for connecting in series with the lamp so that the impedance device receives the lamp current when the switching network is operating in the non-conductive state and the lamp current bypasses the capacitor when the switching network is operating in the conductive state.
US08547026B2	LED backlight driving circuit and display device The present invention provides a display device and an LED backlight driving circuit thereof. The LED backlight driving circuit includes a plurality of LED light strings connected in parallel; a switch module including switches; a power module, and a switching control module. The switching control module includes: a driving unit connected to the switches; a current detection unit connected to the switches; an ON time detection unit connected to the driving unit; a reference unit, the reference unit supplying a reference value; multipliers, each of which has two input terminals respectively connected to the ON time detection unit and the current detection unit to receive a ON time value of a corresponding one of the switches and a voltage signal indicating the current of the switch; and comparison units, each of which has two input terminals respectively connected to the reference unit and an output terminal of a corresponding one of the multipliers. Each of the comparison units has an output terminal connected to the driving unit. The driving unit controls the ON time of the switch corresponding to the comparison unit according to an output result of the comparison unit.
US08547022B2	Lighting control system for a plurality of luminaires A lighting control system includes a plurality of luminaires each having a selectively powerable first light source and a selectively powerable second light source. The luminaires are powerable and controllable by a common AC power source. A signal receiving controller of each of the luminaires is electrically connected to the first light source and the second light source and selectively causes power to be routed to either the first light source or the second light source dependent on a control signal sent via the AC power source.
US08547021B2	Plasma processing apparatus A plasma processing device includes a first electrode plate (3), a second electrode plate (4), a matching device (8), a power distribution device (9) and a power supply device (1). The first electrode plate (3) includes at least two sub-electrode plates (31, 32) insulated from each other; the power supply device (1) is connected to the power distribution device (9) via the matching device (8); the power distribution device (9) is connected to the first electrode plate (3) for inputting and distributing the power of the power supply device (1) to each of the sub-electrode plates (31, 32); the power distribution device (9) at least includes capacitors (C1, C2) and/or inductances (L1, L2). The plasma processing device distributes the power of the power supply device (1) into several portions corresponding to the number of the sub-electrodes (31, 32) through the power distribution device (9), and each portion of the power is individually inputted to the corresponding sub-electrode (31, 32) to acquire individual electric field distribution between each sub-electrode plate (31, 32) and the second electrode plate (4).
US08547015B2	Light extraction films for organic light emitting devices (OLEDs) Optical films for enhancing light extraction from self-emissive light sources such as bottom-emitting or top-emitting OLEDs are disclosed. The extraction films typically include a flexible carrier film, and a first and second layer carried by the carrier film. The first or second layer has a nanovoided morphology and includes a polymer binder, and may also have a refractive index less than 1.35 or 1.3. An embedded structured surface of light extraction elements is formed between the first and second layers. The light extraction elements may be primarily diffractive elements adapted to be disposed within an evanescent zone of the OLED, or they may be primarily refractive elements adapted to be disposed outside the evanescent zone. The extraction film may also include a third layer, and a second embedded structured surface may be formed between the third layer and the first layer.
US08547014B2	Organic EL device and electronic apparatus An organic EL device includes an organic EL element that includes an anode having a reflective face, a cathode having a semi-transmissive reflective layer, and a functional layer, which is pinched between the anode and the cathode and includes at least an organic light emitting layer, and configures a color pixel that implements light emission corresponding to at least a red color. The color pixel configured by the organic EL element forms an optical resonator between the reflective face of the anode and the semi-transmissive reflective layer of the cathode. The color pixel corresponding to the red color has a film thickness profile of the functional layer in a convex shape in which a center portion is relatively thick, and a periphery portion is relatively thin or a concave shape in which the center portion is relatively thin, and the periphery portion is relatively thick.
US08547010B2	Color adjusting arrangement Disclosed is a color adjusting arrangement comprising: i) a first wavelength converting material arranged to receive ambient light and capable of converting ambient light of a first wavelength range into light of a second wavelength range, and/or reflecting ambient light of said second wavelength range, said second wavelength range being part of the visible light spectrum; and ii) a complementary wavelength converting material arranged to receive ambient light and capable of converting part of said ambient light into light of a complementary wavelength range, which is complementary to said second wavelength range, and arranged to allow mixing of light of said second wavelength range and said complementary wavelength range; such that light of said second wavelength range that is emitted and/or reflected by said first wavelength converting material and light of said complementary wavelength range is mixed when leaving the color adjusting arrangement towards a viewing position, the light leaving the color adjusting arrangement thereby appearing less colored, i.e. having a color point substantially near the black body line. The invention thus allows an undesirable colored appearance of a semiconductor-phosphor based light source to be at least partly extinguished or neutralized.
US08547009B2	Lighting structures including diffuser particles comprising phosphor host materials A lighting structure may include a semiconductor light emitting device configured to generate light responsive to an electrical signal applied thereto. In addition, an encapsulating material may be configured to transmit light generated by the semiconductor light emitting device, and the encapsulating material may include yttrium aluminum garnet (YAG) diffuser particles and phosphor particles therein. More particularly, the yttrium aluminum garnet (YAG) diffuser particles and the phosphor particles may have different compositions.
US08547007B2	Electron emitting element, electron emitting device, light emitting device, image display device, air blowing device, cooling device, charging device, image forming apparatus, electron-beam curing device, and method for producing electron emitting element An electron emitting element of the present invention includes an electron acceleration layer between an electrode substrate and a thin-film electrode. The electron acceleration layer includes a binder component in which insulating fine particles and conductive fine particles are dispersed. Therefore, the electron emitting element of the present invention is capable of preventing degradation of the electron acceleration layer and can efficiently and steadily emit electrons not only in vacuum but also under the atmospheric pressure. Further, the electron emitting element of the present invention can be formed so as to have an improved mechanical strength.
US08547006B1	Electron gun for a multiple beam klystron with magnetic compression of the electron beams A multi-beam electron gun provides a plurality N of cathode assemblies comprising a cathode, anode, and focus electrode, each cathode assembly having a local cathode axis and also a central cathode point defined by the intersection of the local cathode axis with the emitting surface of the cathode. Each cathode is arranged with its central point positioned in a plane orthogonal to a device central axis, with each cathode central point an equal distance from the device axis and with an included angle of 360/N between each cathode central point. The local axis of each cathode has a cathode divergence angle with respect to the central axis which is set such that the diverging magnetic field from a solenoidal coil is less than 5 degrees with respect to the projection of the local cathode axis onto a cathode reference plane formed by the device axis and the central cathode point, and the local axis of each cathode is also set such that the angle formed between the cathode reference plane and the local cathode axis results in minimum spiraling in the path of the electron beams in a homogenous magnetic field region of the solenoidal field generator.
US08547001B2	Ceramic, piezoelectric device, and production method thereof To provide a piezoelectric ceramic containing BiFeO3 having a {110} plane orientation in a pseudo-cubic form, which is suited for the domain engineering, the piezoelectric ceramic includes a perovskite-type metal oxide represented by the following general formula (1), and has a {110} plane orientation in a pseudo-cubic form: xBiFeO3-(1−x)ABO3 General Formula (1) where A and B each represent one kind or more of metal ions; A represents a metal ion having a valence of 1, 2 or 3; and B represents a metal ion having a valence of 3, 4, or 5, provided that x is within a range of 0.3≦x≦1.
US08547000B2	Ultrasonic, flow measuring device An ultrasonic transducer for an ultrasonic, flow measuring device comprising an electromechanical transducer element and an ultrasound window, wherein an adapting, or matching, layer liquid at operating conditions of the ultrasonic transducer is arranged between the electromechanical transducer element and the ultrasound window, wherein the ultrasonic transducer has holding means, which exert a releasable force toward the ultrasound window on the electromechanical transducer element, in order to hold the electromechanical transducer element in a predetermined position relative to the ultrasound window.
US08546998B2	Sandwich piezoelectric device with solid copper electrode Disclosed are apparatus and methodology for minimizing and compensating for cracking in piezoelectric devices so as to maintain long term functionality of the devices. Compensation for cracking is achieved by applying solid conductive electrodes over the entire surface of the piezoelectric device and extending the electrodes beyond the perimeter of the piezoelectric device. In this way electrical connections are maintained even in the presence of cracking. Cracking of the piezoelectric device is limited by minimizing the local bending moment of the piezoelectric device by way of applying insulative support materials that may vary in thickness.
US08546997B2	Ultrasonic sensor An ultrasonic sensor includes a support body having an opening, a support film closing the opening, a piezoelectric body disposed on the support film in an inner region of the opening in a plan view, a first resin material forming a first space closed off from an outside space between the first resin material and the support film in at least a region in which the opening is formed in the plan view and the first resin material having an contacting portion facing the opening and being configured to contact with a test object, a second resin material forming a second space closed off from the outside space and communicating with the first space, and an ultrasonic wave transmitting medium filling the first and second spaces. A flexible portion having lower rigidity than the support film in the film thickness direction is provided in a portion of the second resin material.
US08546993B2	Brush holder apparatus, brush assembly, and method Devices and methods of use for brush holder assemblies are disclosed. Brush holder assemblies including a mounting block and a brush holder are disclosed. Also illustrated is a brush holder assembly including a first portion in sliding engagement with a second portion. In some embodiments the brush holder includes a channel, such that at least a portion of the mounting block is disposed within the channel of the brush holder.
US08546990B2	Permanent magnet synchronous rotating electric machine and rotor core A permanent magnet synchronous rotating electric machine includes a rotor and a stator. The rotor includes a first hole, a second hole, a first magnet, and a second magnet. The second hole is provided on an opposite side with respect to a center line extending along a radial direction of the rotor. The first magnet is provided in the first hole and extends along a first longitudinal axis inclined at a first acute angle with respect to the center line. The second magnet is provided in the second hole and extends along a second longitudinal axis inclined at a second acute angle with respect to the center line. The second acute angle is smaller than the first acute angle.
US08546987B2	Brushless DC motor A brushless direct current motor for use in a HVAC system, has a stator and a rotor rotatably mounted to the stator. The stator has a stator core, field windings wound on the stator core and a bushing. The rotor has a shaft rotatably supported by the bushing and adapted to connect with a valve adjuster of the HVAC system. The rotor also has at least one permanent magnet fixed with respect to the shaft. The bushing is a monolithic construction with two journal portions and one middle portion. The two journal portions support the shaft and are formed at respective axial ends of the middle portion. The middle portion has an inner diameter larger than an outer diameter of the shaft at portions corresponding to the middle portion, so as to form a gap between the middle portion and the shaft.
US08546986B2	Stator connector A stator connector has an annular carrier structure adapted to be superposed on and fixed to the central annular portion of the stator and manufactured from an electrically insulating plastic overmolded onto a group of N conducting members which are separated from each other and electrically insulated by said plastic and having a generally arcuate shape. The conducting members have respective first projections extending out of the annular carrier structure. These first projections are adapted to be connected, in particular by soldering or welding, to terminals or ends of coils of the stator. Each conducting member further has at least one additional connection projection extending out of the annular carrier structure to form phase terminals for the stator.
US08546985B2	Electromagnetic motor and equipment to generate work torque The present invention refers to a high efficiency and cold electromagnetic motor that is able to considerably increase the electromagnetic and/or mechanic potential energy available to be used in any equipment fed by primary sources of energy. More specifically, the present invention refers to a motor, or also a generator, that comprises structural and functioning features that reduce the consumption of electric energy and, at the same time, deliver mechanic potential energy and work torque at least equivalent to the conventional electric motors.
US08546983B2	Split drain system and method for an electric machine module Embodiments of the invention provide an electric machine module including module housing with an inner wall and at least one end cap. The module can at least partially define a machine cavity. The electric machine module can also include at least two drain holes positioned substantially circumferentially apart from one another and extending through a lower portion of the module housing. The at least two drain holes can provide gravity-fed fluid pathways out of the machine cavity.
US08546978B2	Electric circuit device According to an aspect of an embodiment, an electric circuit device includes: a first and second voltage supply units to be applied with a first and second voltages, respectively; a first capacitor connected to the first voltage supply unit; a first switch connected between the first voltage supplying unit and the first capacitor; a first load circuit connected to the second voltage supply unit; a second switch connected between the second voltage supply unit and the first load circuit; a third switch connected to connect the first capacitor with the first load circuit; and a switch controller for turning on either the third switch or the first switch, and for turning off the third switch while the second switch is turned on.
US08546972B2	Vertical wind power generator A vertical wind power generator comprises a tower column (1), at least one generator unit (2), at least two blades (3), an excitation control device (16), a rotation rectifying device (161), a bidirectional frequency converter (15), flanges (7-13), bearings (4-6), a cooling system, a crane (80) and a lift system. The generator unit (2) comprises a bracket (201), a generator (202) and an exciter (203). The bracket (201) comprises an outer bracket (2011) and an inner bracket (2012). The generator (202) comprises a stator (2021) and a rotor (2022). The exciter (203) comprises a stator (2031) and a rotor (2032). The vertical wind power generator can be manufactured at reduced cost, be rapidly started, improve the utilization efficiency of wind power, have a better cooling effect on the generator (202) and increase its operating life, and therefore reduce maintenance cost and time.
US08546965B2	Reduced pressure differential hydroelectric turbine system This invention involves a hydroelectric turbine system that is capable of producing electricity while sustaining a majority of the fluid flow or hydraulic pressure within the pipe line or pipe network driving the system. The system's objective is to shave as little pressure as possible from an enclosed pipe system that requires pressure to operate and function properly. More particularly, this invention relates to a hydroelectric turbine generator system wherein the system is specially designed and configured with an unique impeller and fluted turbine housing that enable a generator device to produce a particular amount of electric current and voltage, while yet minimizing flow restriction and pressure loss to the fluid pressure driving the system. Application of this technology includes all fluid flow or fluid transfer systems that require sustained pressure to move fluids like water or other materials from one location or point to another, through pipes, pipe systems or networks, regardless of distance or pipe size diameters. This invention, for example will be ideally suited for powering electronic control or monitoring systems in landscapes, parks, roadway easements, golf courses or public water transfer systems or other remote sites that may require power. Utilization of this invention provides an ecological and reliable energy production source, usually on a small scale, in remote locations where incorporating other forms of power supply may be less practical, impractical or impossible.
US08546961B2	Alignment marks to enable 3D integration Disclosed are a structure including alignment marks and a method of forming alignment marks in three dimensional (3D) structures. The method includes forming apertures in a first surface of a first semiconductor substrate; joining the first surface of the first semiconductor substrate to a first surface of a second semiconductor substrate; thinning the first semiconductor on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate; and aligning a feature on the second surface of the first semiconductor substrate using the apertures as at least one alignment mark.
US08546960B2	Manufacturing method of semiconductor device, semiconductor device and mobile communication device A manufacturing method of a semiconductor device includes: sealing a semiconductor chip with a sealing resin containing a filler; exposing a part of the filler; etching at least a part of the exposed filler; and forming a metal film at least at a part of a surface of the sealing resin including inner surfaces of holes formed at the surface of the sealing resin by the etching.
US08546959B2	Resin composition for encapsulating semiconductor, method for producing semiconductor device and semiconductor device Disclosed is a granular resin composition for encapsulating a semiconductor used for a semiconductor device obtained by encapsulating a semiconductor element by compression molding, satisfying the following requirements (a) to (c) on condition that ion viscosity is measured with a dielectric analyzer under a measurement temperature of 175° C. and a measurement frequency of 100 10 Hz: (a) the time from the initiation of the measurement until a decrease of the ion viscosity to the lowest ion viscosity is 20 seconds or shorter; (b) the lowest ion viscosity value is not more than 6.5; and (c) the time interval between the time from the initiation of the measurement until a decrease of the ion viscosity to the lowest ion viscosity and the time from the initiation of the measurement until the ion viscosity reaching 90% of an ion viscosity value measured at 300 seconds is 10 seconds or longer.
US08546956B2	Three-dimensional (3D) integrated circuit with enhanced copper-to-copper bonding At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.
US08546946B2	Chip stack package having spiral interconnection strands A chip stack package is provided. The chip stack package includes an n number of chips stacked on each other and an n number of interconnection strands connecting the chips. The interconnection strands are spirally rotated and insulated from each other. In one embodiment, the chips are substantially structurally identical. In another embodiment, each of the interconnection strands is electrically coupled to a chip selection signal.
US08546944B2	Multilayer dielectric memory device A memory device has multiple dielectric barrier regions. A memory device has multiple barrier regions that provide higher or lower current-voltage slope compared to a memory device having a single barrier region. The device also has electrode regions that provide further control over the current-voltage relationship.
US08546943B2	Ball grid array substrate with insulating layer and semiconductor chip package Provided is a ball grid array substrate, a semiconductor chip package, and a method of manufacturing the same. The ball grid array substrate includes an insulating layer having a first surface providing a mounting region for a semiconductor chip, a second surface opposing the first surface, and an opening connecting the second surface with the mounting region of the semiconductor chip, and a circuit pattern buried in the second surface. Since the ball grid array substrate is manufactured by a method of stacking two insulating layers, existing devices can be used, and the ball grid array substrate can be manufactured as an ultra thin plate. In addition, since the circuit pattern is buried in the insulating layer, a high-density circuit pattern can be formed.
US08546936B2	Method and structure of minimizing mold bleeding on a substrate surface of a semiconductor package A substrate surface of a semiconductor package, comprising: a plurality of product forming areas to provide mounting spaces of semiconductor chips. The substrate surface also comprises a plurality of staggered offset mesh block areas surrounding the plurality of product forming areas. The plurality of staggered offset mesh block areas minimize mold bleeding from a mold cavity of the semiconductor package to outer areas of the substrate surface.
US08546934B2	Method for manufacturing semiconductor devices having a glass substrate A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer.
US08546933B2	Semiconductor apparatus including resin case A semiconductor apparatus according to aspects of the invention can include a metal base; resin case having a bonding plane facing metal base; a coating groove formed in bonding plane and holding adhesive for bonding resin case to metal base at a predetermined position, with the top plane of the wall that forms coating groove being spaced apart from the plane which contains bonding plane such that an escape space is formed between the metal base and the resin case; the escape space receiving the excess amount of adhesive which has flowed out from the coating groove; and a receiver groove communicating to the escape space and receiving securely the excess amount of adhesive which the escape space has failed to receive. If an excess amount of adhesive too much for the receiver groove to receive is coated, the excess amount of adhesive can be received in a stopper groove.
US08546931B2	Stacked semiconductor components having conductive interconnects A stacked semiconductor component includes a semiconductor substrate having a substrate contact, a substrate opening extending to an inner surface of the substrate contact, and a conductive interconnect comprising a wire in the substrate opening having a wire bonded connection with the inner surface of the substrate contact. The stacked semiconductor component also includes a second substrate stacked on the semiconductor substrate having a contact bonded to the conductive interconnect on the semiconductor substrate. The second substrate can also include conductive interconnects in the form of wire bonded wires, and the stacked semiconductor substrate can include a third semiconductor substrate stacked on the second substrate.
US08546929B2	Embedded integrated circuit package-on-package system An embedded integrated circuit package-on-package system is provided forming a first integrated circuit package system, forming a second integrated circuit package system, and mounting the second integrated circuit package system over the first integrated circuit package system with the first integrated circuit package system, the second integrated circuit package system, or a combination thereof being an embedded integrated circuit package system or an embedded stacked integrated circuit package system.
US08546926B2	Power converter The present power converter includes a power conversion semiconductor device, an electrode connection conductor which electrically connects multiple electrodes having the same potential, and also has a generally flat upper surface for electrically connecting to an exterior portion, and a sealing material provided so as to cover the power conversion semiconductor device, and also to expose the generally flat upper surface of the electrode connection conductor.
US08546922B2	Wiring board A wiring board including a core substrate made of an insulative material and having a penetrating portion, a first interlayer insulation layer formed on the surface of the core substrate, a first conductive circuit formed on the surface of the first interlayer insulation layer, a first via conductor formed in the first interlayer insulation layer, and an electronic component accommodated in the penetrating portion of the core substrate and including a semiconductor element, a bump body mounted on the semiconductor element, a conductive circuit connected to the bump body, an interlayer resin insulation layer formed on the conductive circuit, and a via conductor formed in the interlayer resin insulation layer. The first via conductor has a tapering direction which is opposite of a tapering direction of the via conductor in the electronic component.
US08546921B2	Hybrid multilayer substrate A hybrid multilayer substrate in an electronic package. The substrate includes a first portion having m layers and a second portion having n layers such that m is less than n. The first portion has a first height and the second portion has a second height. The first height is different than the second height. In another embodiment, a surface is formed between the first portion and the second portion, and a shielding material can be applied to the surface. In a different embodiment, the hybrid multilayer substrate is manufactured for shielding a first die from a second die.
US08546920B2	Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.
US08546916B2	Capacitors and methods of manufacture thereof Semiconductor devices, capacitors, and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a capacitor includes forming a first material over a workpiece, and patterning the first material, forming a first capacitor plate in a first region of the workpiece and forming a first element in a second region of the workpiece. A second material is formed over the workpiece and over the patterned first material. The second material is patterned, forming a capacitor dielectric and a second capacitor plate in the first region of the workpiece over the first capacitor plate and forming a second element in a third region of the workpiece.
US08546911B2	High frequency device A small high frequency device that is able to inhibit generation of an eddy current and a parasitic capacity and shows superior high frequency characteristics is provided. The high frequency device includes: a substrate having a depression; a dielectric layer over the substrate; and a plurality of electronic devices which are provided in the dielectric layer or on the dielectric layer, and at least one of which is opposed to the depression.
US08546905B2	Semiconductor integrated circuit device and a method of manufacturing the same To reduce size of a finished product by reducing the number of externally embedded parts, embedding of a Schottky barrier diode relatively large in the amount of current in a semiconductor integrated circuit device has been pursued. It is general practice to densely arrange a number of contact electrodes in a matrix over a Schottky junction region. A sputter etching process to the surface of a silicide layer at the bottom of each contact hole is performed before a barrier metal layer is deposited. However, in a structure in which electrodes are thus arranged over a Schottky junction region, a reverse leakage current in a Schottky barrier diode is varied by variations in the amount of sputter etching. The present invention is a semiconductor integrated circuit device having a Schottky barrier diode in which contact electrodes are arranged over a guard ring in contact with a peripheral isolation region.
US08546899B2	Light receiving element, light receiving device, and light receiving module A light receiving element includes a waveguide that includes a waveguide core, a multi-mode interference waveguide that has a width larger than a width of the waveguide, the multi-mode interference waveguide receiving a first light from the waveguide core at a first end, and a photodetection portion that includes a first semiconductor layer and an absorption layer disposed on the first semiconductor layer, the first semiconductor layer including at least one layer and receiving a second light from the multi-mode interference waveguide at a second end, the absorption layer being disposed above the first semiconductor layer and absorbing the second light. A distance from the first end of the multi-mode interference waveguide to the second end of the photodetection portion is longer than 70% of a first length and shorter than 100% of the first length, the first length being a length where self-imaging occurs in the multi-mode interference waveguide.
US08546897B2	Magnetic memory element A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer.
US08546894B2	Capacitive micromachined ultrasonic transducer comprising electrode on flexible membrane A technology capable of preventing the degradation of operation reliability of CMUT when a lower electrode for CMUTs arranged in an array is divided in order to control the CMUTs independently is provided. Also, a technology capable of preventing the formation of a convex or concave distortion in an insulating film (membrane) of the cavity is provided. For its achievement, a size of a lower electrode divided for independently controlling each CMUT is set to be larger than that of a cavity. Also, a size of an upper electrode of the CMUT is set to be larger than that of the cavity.
US08546892B2	Semiconductor device and method for manufacturing semiconductor device It is an object of an embodiment of the present invention to reduce leakage current between a source and a drain in a transistor including an oxide semiconductor. As a first gate film in contact with a gate insulating film, a compound conductor which includes indium and nitrogen and whose band gap is less than 2.8 eV is used. Since this compound conductor has a work function of greater than or equal to 5 eV, preferably greater than or equal to 5.5 eV, the electron concentration in an oxide semiconductor film can be maintained extremely low. As a result, the leakage current between the source and the drain is reduced.
US08546890B2	Inverter structure and method for fabricating the same An inverter structure is disclosed. The inverter structure includes an NMOS transistor and a PMOS transistor. Preferably, the NMOS transistor includes an n-type gate electrode and an n-type source/drain region, and the PMOS transistor includes a p-type gate electrode and a p-type source/drain region. Specifically, the n-type gate electrode and the p-type gate electrode are physically separated and electrically connected by a conductive contact.
US08546889B2	Semiconductor device and driving circuit A high breakdown voltage semiconductor device includes: an n− type region (101) surrounded by a p− well region (102) on a p− type silicon substrate (100); a drain n+ region (103) connected to a drain electrode (120); a p base region (105) formed so as to surround the drain n+ region (103); a source n+ region (114) formed in the p base region (105); and a p− region (131) for isolating the n− type region (101) into an n− type region (101a) including the drain n+ region (103), and an n− type region (101b) not having the drain n+ region (103). The n− type region (101b) is connected to the drain electrode (120) or the drain n+ region (103) via an n offset region (104) or a polysilicon (304) which is a high resistance element.
US08546886B2	Controlling the device performance by forming a stressed backside dielectric layer A device includes a p-type metal-oxide-semiconductor (PMOS) device and an n-type metal-oxide-semiconductor (NMOS) device at a front surface of a semiconductor substrate. A first dielectric layer is disposed on a backside of the semiconductor substrate. The first dielectric layer applies a first stress of a first stress type to the semiconductor substrate, wherein the first dielectric layer is overlying the semiconductor substrate and overlapping a first one of the PMOS device and the NMOS device, and is not overlapping a second one of the PMOS device and the NMOS device. A second dielectric layer is disposed on the backside of the semiconductor substrate. The second dielectric layer applies a second stress to the semiconductor substrate, wherein the second stress is of a second stress type opposite to the first stress type. The second dielectric layer overlaps a second one of the PMOS device and the NMOS device.
US08546880B2	Anti punch-through leakage current metal-oxide-semiconductor transistor and manufacturing method thereof An anti punch-through leakage current MOS transistor and a manufacturing method thereof are provided. A high voltage deep first type well region and a first type light doping region are formed in a second type substrate. A mask with a dopant implanting opening is formed on the second type substrate. An anti punch-through leakage current structure is formed by implanting the first type dopant through the dopant implanting opening. A doping concentration of the first type dopant of the high voltage deep first type well region is less than that of the anti punch-through leakage current structure and greater than that of the high voltage deep first type well region. A second type body is formed by implanting a second type dopant through the dopant implanting opening. A gate structure is formed on the second type substrate.
US08546877B2	Semiconductor device A transistor structure that improves an ESD withstand voltage is offered. There is formed a P-type insulating isolation layer that divides an N-type epitaxial layer into a plurality of regions and isolates neighboring regions from each other. A diffusion layer doped with high concentration N-type impurities and an electrode extraction layer are formed in a surface of the epitaxial layer between a low impurity concentration drain layer and the insulating isolation layer. The diffusion layer and the electrode extraction layer are connected with a drain electrode. When an excessive positive surge voltage is applied to a source electrode, a parasitic diode that makes a current path including the diffusion layer and the electrode extraction layer is turned on to shunt an ESD current from the source electrode to the drain electrode, in addition to other parasitic diodes included in a conventional structure.
US08546876B2	Systems and devices including multi-transistor cells and methods of using, making, and operating the same A device may include a first transistor, a second transistor, and a data element. The first transistor may have a column gate and a channel, and the second transistor may include a row gate that crosses over the column gate, under the column gate, or both. The second transistor may also include another channel, a source disposed near a distal end of a first leg, and a drain disposed near a distal end of a second leg. The column gate may extend between the first leg and the second leg. The channel of the second transistor may be connected to the channel of the first transistor, and the data element may be connected to the source or the drain. Methods, systems, and other devices are contemplated.
US08546868B2	Non-volatile semiconductor memory device and method of manufacturing the same A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.
US08546867B2	Non-volatile memory semiconductor device A technique capable of improving the reliability of a non-volatile memory semiconductor device is provided and, in particular, a technique capable of supplying electricity without fail to a memory gate electrode of split gate transistor is provided.One end of an electricity supply line ESL is arranged over a terminal end TE1 and the other end thereof is arranged over a terminal end TE2, and further, the central portion of the electricity supply line ESL is arranged over a dummy part DMY. That is, the terminal end TE1, the terminal end TE2, and the dummy part DMY have substantially the same height, and therefore, most of the electricity supply line ESL arranged from over the terminal end TE1 to over the terminal end TE2 via the dummy part DMY is formed so as to have the same height.
US08546861B2	Resistance change memory device with three-dimensional structure, and device array, electronic product and manufacturing method therefor Provided are a resistance change memory device with a three-dimensional structure, a resistance change memory device array, an electronic product, and a manufacturing method therefor. The device array includes a plurality of first directional data lines which are arranged on a substrate in parallel. A conductive pillar is positioned between sidewalls of the first directional data lines, which face each other. A resistance change material film is positioned between the sidewall of the conductive pillar and the sidewall of the data lines that are adjacent to the sidewall of the conductive pillar.
US08546859B2	Semiconductor device with a CMOS image sensor and method of manufacturing such a device The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with a plurality of active pixels arranged in rows and columns each pixel comprising a pinned photodiode and a plurality of transistors for operating the pixel in the image forming process and including reset means.According to the invention the semiconductor device comprises also precharge means by which the photodiode can be precharged by a fixed amount of charge carriers after it has been reset by the reset means. In this way the sensors has a highly linear response, in particular at low light/radiation level, and a very low noise. The sensor is very suitable for X-ray/medical applications.
US08546857B1	Semiconductor structure and method for forming the same A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a source region and a drain region defined in the semiconductor substrate respectively, and a trench formed in the source region and/or the drain region, in which a rare earth oxide layer is formed in the trench; a source and/or a drain formed on the rare earth oxide layer; and a channel region formed between the source and the drain. A relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the source and/or the drain and/or the channel region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
US08546852B2	Semiconductor device A semiconductor device includes: substrate region; a gate electrode, a source electrode, and a drain electrode which are placed on a first surface of the substrate regions; an active area between gate and source placed between the gate electrode and the source electrode; an active area between gate and drain placed between the gate electrode and the drain electrode; an active area placed on the substrate region of the underneath part of the gate electrode, the source electrode, and the drain electrode; and a non-active area placed adjoining the active area, the active area between gate and source, and the active area between gate and drain. Furthermore, width WA1 of the active area between gate and source is wider than width WA2 of the active area between gate and drain. Channel resistance of an active area between source and gate placed between a gate electrode and a source electrode is reduced, and high-frequency performance is provided.
US08546851B2	Semiconductor integrated circuit device In addition to a memory macro region and functional circuit regions on a substrate, a semiconductor integrated circuit device includes a dummy pattern region 40 arranged between the functional circuit regions and between the memory macro region 10 and the functional circuit regions and including a dummy pattern. The dummy pattern has a pattern identical to that of diffusion layers and gate electrodes of a memory cell pattern in a memory cell array region. An area ratio of dummy diffusion layer(s) and dummy gate electrode(s) in the dummy pattern region is equal to or greater than that of the diffusion layers and the gate electrode(s) in the memory cell array region.
US08546849B2	High voltage cascoded III-nitride rectifier package utilizing clips on package surface Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package utilizing clips on a package support surface have been disclosed. One exemplary embodiment comprises a III-nitride transistor attached to a package support surface and having an anode of a diode stacked over a source of the III-nitride transistor, a first conductive clip coupled to a gate of the III-nitride transistor and the anode of the diode, and a second conductive clip coupled to a drain of the III-nitride transistor. The conductive clips are connected to the package support surface and expose respective flat portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since a low cost printed circuit board (PCB) may be utilized for the package support surface, expensive leadless fabrication processes may be avoided for cost effective manufacturing.
US08546846B2	Nitride semiconductor light emitting device A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers and having a structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked; and an electron blocking layer disposed between the active layer and the p-type nitride semiconductor layer. The electron blocking layer has a superlattice structure in which two or more layers having different compositions are alternately stacked. An absolute value of a net polarization mismatch between a material, the material having a composition corresponding to an average composition of the superlattice structure, and a quantum barrier layer adjacent to the electron blocking layer among the plurality of quantum barrier layers is less than ⅔ of an absolute value of a net polarization mismatch between AlxG1-xN(0
US08546836B2	Light-emitting element A light-emitting element includes a semiconductor laminated structure including a nitride semiconductor, and formed by laminating a first semiconductor layer of a first conductivity type, a light-emitting layer and a second semiconductor layer of a second conductivity type different from the first conductivity type, the first semiconductor layer being exposed by removing a part of the second semiconductor layer and the light-emitting layer, a concave portion formed in the exposed portion of the first semiconductor layer, a first electrode formed on the concave portion and being in ohmic contact with the first semiconductor layer, and a second electrode being in ohmic contact with the second semiconductor layer and formed surrounding the first electrode.
US08546835B2	Light emitting device Disclosed is a light emitting device. The light emitting device includes a body, a plurality of electrodes in the body, a light emitting chip installed in the body and electrically connected to the electrodes to generate light, and a thermo electric cooler module electrically connected to the electrodes and formed at a lower portion of the light emitting chip to cool the light emitting chip.
US08546832B2	Thin-film LED with p and n contacts electrically isolated from the substrate A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.
US08546831B1	Reflection convex mirror structure of a vertical light-emitting diode A reflection convex mirror structure is applied to a vertical light-emitting diode (LED) which comprises a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer, a filler and a mirror are disposed right below the N-type electrode. The filler is made of a transparent material and has a convex surface facing the light-emitting layer. The mirror is formed on the convex surface of the filler. By utilizing the filler and the mirror to form the reflection convex mirror structure, excited light is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
US08546830B2	Method of growing semiconductor heterostructures based on gallium nitride The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0
US08546827B2	Semiconductor light emitting device A light emitting device that can radiate heat generated by a semiconductor light emitting element and/or a resin layer at not only a position directly under the light emitting element, but also a position remote from such a position with respect to the main plane direction is provided. In the light emitting device, a light emitting element is carried on a substrate, and a resin covers the light emitting element. An anisotropic heat conduction material showing a heat conductivity for the substrate main plane direction larger than that for the substrate thickness direction is carried on the substrate. A side of the anisotropic heat conduction material contacts with the resin. Thereby, the anisotropic heat conduction material can receive heat of the resin, conduct it along the main plane direction, and radiate it to the substrate at a position remote from the light emitting element and/or the resin. As the anisotropic heat conduction material, for example, one or more laminated layers of graphite in the form of sheet are used.
US08546826B2	Light-emitting module and method of manufacture for a light-emitting module A light-emitting module includes a supporting element, a number of optoelectronic semiconductor components mounted on the supporting element for the generation of electromagnetic radiation, and a metallic connecting layer by means of which the optoelectronic semiconductor components are supplied with operating voltage. An insulation layer is arranged in a region of the optoelectronic semiconductor components between the supporting element and the metallic connecting layer. The metallic connecting layer forms a light shade for the optoelectronic semiconductor components, so that the electromagnetic radiation is only emitted in a specified direction.
US08546824B2	Light emitting device A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.
US08546818B2	Vertical LED with current-guiding structure Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
US08546816B2	Light-emitting component and method for the production thereof The invention relates to a light-emitting component, in particular an organic luminescent diode, having an electrode and a counter electrode and an organic region arranged between the electrode and the counter electrode and having an organic light-emitting region. Furthermore, the invention relates to methods for the production of such a component.
US08546813B2	Semiconductor substrate and semiconductor device A semiconductor substrate includes an AlN layer that is formed so as to contact a Si substrate and has an FWMH of a rocking curve of a (002) plane by x-ray diffraction, the FWMH being less than or equal to 1500 seconds, and a GaN-based semiconductor layer formed on the AlN layer.
US08546808B2	Liquid crystal display device The liquid crystal display device of this invention includes picture element regions each defined by a first electrode provided on a first substrate and a second electrode provided on a second substrate so as to oppose the first electrode via a liquid crystal layer sandwiched therebetween. In each of the picture element regions, the first electrode includes a solid portion and a nonsolid portion. The liquid crystal display device further includes a pair of polarizing plates disposed with polarization axes thereof crossing each other substantially perpendicularly. The polarization axis of one of the pair of polarizing plates is substantially parallel to a direction in which the solid portion extends. When a voltage is applied between the first electrode and the second electrode, in each of the picture element regions, liquid crystal molecules of the liquid crystal layer are in a radially-inclined orientation state.
US08546804B2	Semiconductor device including a region containing nitrogen at an interface and display device It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
US08546800B2	Thin film transistor A thin film transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a channel region formed on the gate insulating layer, a source region and a drain region formed at two opposite ends of the channel region, a first etching block layer made of silicon oxide and a second etching block layer made of silicon nitride which are formed in sequence on the channel region. The second etching block layer defines a groove in a center thereof to expose a part of the first etching block layer. The groove divides the second etching block layer into a first region and a second region. A source electrode extends from the source region to the first region. A drain electrode extends from the drain region to the second region.
US08546796B2	Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film A semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.
US08546792B2	Anthracene derivative, and light emitting element, light emitting device, and electronic device using the anthracene derivative It is an object to provide a noble anthracene derivative, a light emitting element with a high luminous efficiency, and further a light emitting element with a long lifetime. It is another object to provide a light emitting device and electronic device with a long lifetime by using the light emitting element. An anthracene derivative represented by General Formula (1) is provided. Since the anthracene derivative represented by General Formula (1) has a high luminous efficiency, when the anthracene derivative is used for a light emitting element, the light emitting element can have a high luminous efficiency. Further, when the anthracene derivative represented by General Formula (1) is used for a light emitting element, the light emitting element can have a long lifetime.
US08546788B2	Nonvolatile memory device having dielectric layer formed on control gate sidewall along lateral direction Patterns of a nonvolatile memory device include a semiconductor substrate including active regions extending in a longitudinal direction, an isolation structure formed between the active regions, a tunnel insulating layer formed on the active regions, a charge trap layer formed on the tunnel insulating layer, a first dielectric layer formed on the charge trap layer and the isolation structure, wherein the first dielectric layer is extended along a lateral direction, a control gate layer formed on the first dielectric layer, wherein the control gate layer is extended along the lateral direction, and a second dielectric layer formed on a sidewall of the control gate layer along the lateral direction and coupled to the first dielectric layer.
US08546787B2	Group III nitride based quantum well light emitting device structures with an indium containing capping structure Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
US08546786B2	Stacked multiple cell nonvolatile memory device A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
US08546784B2	Phase change current density control structure A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.
US08546780B2	Non-volatile memory device According to one embodiment, a non-volatile memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction, and a variable resistance memory cell which is disposed at an intersection between the first wiring and the second wiring so as to be held between the first wiring and the second wiring and includes a variable resistive element and a rectifying element. In a space between the variable resistance memory cells adjacent to each other, at least a periphery of the variable resistive element is evacuated or filled with a gas.
US08546778B2	Resistance variable memory cells and methods Resistance variable memory cells and methods are described herein. One or more methods of forming a resistance variable memory cell include forming a silicide material on a terminal of a select device associated with the resistance variable memory cell, forming a modified region of the silicide material by modifying a resistivity of a region of the silicide material, forming a conductive element on at least a portion of the modified region, and forming a resistance variable material on the conductive element.
US08546777B2	Radiographic image capturing device A radiographic image capturing device includes: a radiation detector that has plural sensor portions; a detection circuit that reads out, as electrical signals, electric charge quantities stored in each of the sensor portions and converts the electrical signals into digital image data; a receiver that receives electrical power; a power source that is charged by the electrical power and supplies electrical power for driving to at least the radiation detector and the detection circuit; and a controller which, in the case of performing video imaging, controls the detection circuit so as to allow electric charges to be stored in a predetermined storage period and which performs control such that, in the storage period of each imaging, it stops at least one of the charging of the power source with the received electrical power or the reception of the electrical power from the outside by the receiver.
US08546776B2	Optical system for EUV lithography with a charged-particle source To prevent reflective optical elements (2) for EUV lithography from becoming electrically charged as they are irradiated with EUV radiation (4), an optical system for EUV lithography is proposed, having a reflective optical element (2), including a substrate (21) with a highly reflective coating (22) emitting secondary electrons when irradiated with EUV radiation (4), and a source (3) of electrically charged particles, which is arranged in such a manner that electrically charged particles are applied to the reflective optical element (2), wherein the source (3) for the charge carrier compensation is exclusively a flood gun applying electrons to the reflective optical element (2).
US08546774B2	Hadron treatment planning with adequate biological weighting Treatment planning methods are provided that determine the variability of relative biological effectiveness (RBE) along a beam line and calculate, among other things, what intensity of hadron beam such as a proton or a carbon ion beam should be applied to achieve a desired biological dose at treatment site of a patient afflicted with a medical condition. Typically, three or four RBE values at three or four corresponding spacially-dispersed intervals along the beam line are calculated. In one embodiment, two RBE values for the spread-out Bragg peak (SOBP) region of the treatment site; one for the proximal section and one for the declining distal section is calculated. A third and different RBE value may be determined for the distal edge region of the SOBP. A fourth value may also be calculated for a pre-SOBP region.
US08546773B2	Irradiation system and method A radiotherapy technique for providing a radiation source having a radiation path that intersects a treatment area, activating the radiation source, and moving the radiation source in three dimensions about the treatment area, wherein the radiation source is continually directed substantially toward an isocentric point within the treatment area.
US08546771B2	Method and device for identifying a photoluminescent material A method for identifying a photoluminescent material that, after excitation with excitation light, emits emission light having different wavelengths is disclosed. The method includes irradiating the photoluminescent material with the excitation light, detecting a temporal intensity curve of at least two emission light components having different wavelengths, which components are emitted from the photoluminescent material as a result of the excitation, calculating initial intensities of the emission light components at a common time, determining at least one intensity parameter by correlating the calculated initial intensities, determining at least one decay parameter value for each of the emission light components from a time progression of their intensity and identifying the photoluminescent material using the intensity parameter(s) and the decay parameter values. A device configured to identify the photoluminescent material includes an excitation light source, a receiving apparatus, an evaluation apparatus and a control apparatus that performs the photoluminescent material identifying method.
US08546770B2	Charged particle beam device and sample observation method There is provided a charged particle beam device which has a mechanism adjusting the shape of an ionic liquid droplet to be adhered to a sample and the thickness of a film of the ionic liquid, in such a manner that they are suitable for various types of observations by an electronic microscope and the like, and for processing using ion beams. The charged particle beam device is characterized in that it includes an ionic liquid holding member having an opening, an ionic liquid supplying unit for filling an ionic liquid into the opening, an observation unit for observing an adhesion state of the ionic liquid, and charged particle beam generating units for radiating charged particle beams, and can adjust the thickness of an ionic liquid droplet to be filled in the opening, when the charged particle beam device observes a sample in a state where it is floating in the ionic liquid by being dispersed into the ionic liquid or on a surface of the ionic liquid.
US08546768B2	Device for generating an ion beam with magnetic filter A device for generating an ion beam includes a support; a liquid metal ion source connected to the support at the lower end of the ion source and surrounded by a cryogenic trap which is capable of preventing volatile chemicals from reaching the ion source; an ion extraction means for extracting the ions emitted by the source through an opening disposed near the upper end of the ion source; and means for generating a magnetic field in the opening of the extraction means, the generated magnetic field capable of preventing charged particles from reaching the ion source.
US08546767B2	Pattern definition device with multiple multibeam array A multi-beam pattern definition device (102) for use in a particle-beam processing or inspection apparatus is configured to be irradiated with a beam (lp,bp) of electrically charged particles so as to form a number of beamlets to be imaged to a target. An aperture array means (202) comprises at least two sets of apertures (221, 222) for defining respective beamlets (b1-b5), wherein the sets of apertures comprise a plurality of apertures arranged in interlacing arrangements and the apertures of different sets are offset to each other by a common displacement vector (d12). An opening array means (201) has a plurality of openings (210) configured for the passage of a subset of beamlets corresponding to one of the sets of apertures but lacking openings (being opaque to the beam) at locations corresponding to the other sets of apertures. A positioning means shifts the aperture array means relative to the opening array means in order to selectively bring one of the sets of apertures into alignment with the openings in the opening array means.
US08546763B2	Positron computed tomography device In a positron CT device of this invention, a cross range calculation section determines a cross range of a coincidence LOR as a virtual line that connects two detectors for performing coincidence and a pixel, and a system matrix calculating section determines a system matrix by calculating elements in the system matrix within the cross range upon calculating of the system matrix. Thereafter, a reconstruction section creates a distribution image of positrons as an image based on the system matrix. Consequently, improvement in speed of image reconstruction may be realized.
US08546762B1	Method and arrangement for carrying out time-domain measurements Time-domain measurements are carried out using arrangements and methods. A transmitter generates electro-magnetic pulses upon receipt of pulses of an optical pulse source. A coherent detector detects the electro-magnetic pulses or an evoked electro-magnetic signal. A delay line periodically changes the optical path length between the optical pulse source and the coherent detector and/or the electro-magnetic transmitter by periodically moving an optical element of the delay line. A position sensor determines the position of the optical element and smoothes the data generated by the position sensor. The coherent detector detects the electro-magnetic signal evoked by the electro-magnetic pulses. Pulses of the optical pulse source trigger the coherent detector. The time-dependency of the electro-magnetic pulses and/or of the electro-magnetic signal evoked by the electro-magnetic pulses are determined using signals of the coherent detector upon receipt of the electro-magnetic pulses and/or of the electro-magnetic signal and the smoothed position sensor data.
US08546760B2	Apparatus and method for checking thickness dimensions of an element while it is being machined An apparatus for checking thickness dimensions in a semiconductor wafer (1) during grinding operations includes an optical probe (3) which transmits infrared radiations on the surface (2) being machined of the wafer (1), and detects beams that are reflected by said surface, by an opposite surface (2′) of the wafer and/or by surfaces (2″, 2′″) separating different layers in the wafer. The beam of emitted and reflected radiations travels along a path (4) with known and constant discontinuities, in part through the air (15) and in part through a cushion (30) of low flow liquid, which flows with substantially laminar flow. A support and positioning element (7) for the optical probe includes hydraulic ducts (22,25) that generate the liquid cushion. A method for checking the thickness dimensions includes the generation of the liquid cushion at the path along which the beam of emitted and reflected radiations travels.
US08546758B2	Food quality examination device, food component examination device, foreign matter component examination device, taste examination device, and changed state examination device A food quality examination device using a high-sensitivity light-receiving element. The light-receiving element includes a III-V compound semiconductor stacked structure including an absorption layer having a pn-junction therein, wherein the absorption layer has a multiquanturn well structure composed of group III-V compound semiconductors, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, a diffusion concentration distribution control layer composed of III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate,the bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V semiconductor substrate,the concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the absorption layer.
US08546755B2	Ion guide array An ion guide array is disclosed comprising a first ion guide section and a second ion guide section. Each ion guide section may comprise a plurality of electrodes having an aperture through which ions are transmitted in use. A transfer section is arranged at the exit of the first ion guide section and ions are transmitted radially from the first ion guide section into the second ion guide section. Electrodes in the transfer section may have a radial aperture enabling ions to be transmitted radially from the first ion guide section to the second ion guide section.
US08546754B2	Ion trap An ion trap comprises substantially elongate electrodes 10, 20 some of which are curved along their axis of elongation and which define a trapping volume between them. The sectional area of this trapping volume towards the extremities of the trap in the direction of elongation is different to the sectional area away from its extremities (eg towards the middle of the trap). In a preferred embodiment, the trap has a plurality of elongate electrodes, wherein opposed electrodes have different radii of curvature so that the trap splays towards its extremities. Thereby, a wider mass range of ions can be trapped and ejected, a higher space charge capacity (for a given trap length) is provided, and sharper ion beam focussing on ejection is possible.
US08546746B2	Photoelectric encoder and photoelectric encoder system A photoelectric encoder includes a scale in which diffraction gratings are formed at predetermined pitches in a measurement axis direction, a detection head which is relatively movable with respect to the scale, and which includes an illuminating portion configured to illuminate the scale, and a light receiving portion configured to receive light reflected by or transmitted through the diffraction gratings of the scale, a signal processing device configured to process a light reception signal output from the light receiving portion of the detection head, and a signal transmitting unit configured to transmit a signal between the detection head and the signal processing device. The signal processing device includes a display unit configured to display information indicating an attachment posture of the detection head with respect to the scale.
US08546744B2	Rotary encoder, rotary motor, rotary motor system, disk, and method of manufacturing rotary encoder An encoder includes a disc-shaped disk disposed so as to be rotatable about a rotation axis and having at least one ring-shaped track in which a rotating grating is formed and at least one fixed grating which is fixedly disposed opposed to the disk so that the fixed grating and the rotating grating construct a diffraction interference optical system. Each of a plurality of slits included in the at least one rotating grating is formed along a curved line obtained by making each of a plurality of radial lines using the rotation axis as a center curved in the circumferential direction at a predetermined curve degree so that a pitch of the slits can be set to a predetermined value.
US08546741B2	Compact optical finger navigation system based on speckles with an optical element including an optical redirection surface An optical finger navigation device includes an image sensor, a tracking surface, and an optical element. The image sensor generates an image representative of light detected at a pixel array that has a pixel pitch which at least partially defines a surface area of a pixel. The tracking surface is approximately parallel to the image sensor. A first distance between and substantially orthogonal to planes of the tracking surface and the image sensor is insufficient under a set of illumination constraints to produce at the image sensor a speckle size above a threshold. The threshold is approximately one order of magnitude less than the pixel pitch. The optical element is interposed between the tracking surface and the image sensor. The optical element includes at least one optical redirection surface to redirect light along an optical path of a second distance between the tracking surface and the image sensor.
US08546740B2	Evaluation of a difference signal between output signals of two receiving devices in a sensor apparatus A sensor apparatus for optically detecting an object includes (a) a first emitting device, configured to emit a first emission beam, (b) a first receiving device, configured to receive a first reception beam, (c) a second receiving device, configured to receive a second reception beam, and (d) an evaluation unit connected downstream of the first receiving device and the second receiving device. The first reception beam and/or the second reception beam contains scattered light which is produced when an at least partial scattering of the first transmission beam occurs at the object. The evaluation unit is coupled to the first receiving device and the second receiving device so as to receive a difference signal between a first output signal of the first receiving device and a second output signal of the second receiving device. The sensor apparatus may be incorporated in a proximity sensor and a danger warning system.
US08546738B2	Physical quantity distribution detector having a plurality of unit components with sensitivity to a physical quantity change of light A physical information acquiring method of acquiring physical information for a predetermined purpose on the basis of change information that is acquired under predetermined detection conditions for a physical quantity using an portion for physical quantity distribution detection. The portion for physical quantity distribution detection includes a detector that detects change information corresponding to a change in a physical quantity made incident on the detector and has unit components that output unit signals based on the change information detected by the detector arranged in a predetermined order. In the physical information acquiring method, a carrier signal is converted into a signal related to a frequency on the basis of the change information detected by the detector. The physical information for a predetermined purpose is acquired using the signal related to a frequency.
US08546736B2	Modular guided projectile A modular artillery projectile and method of engaging a target. A modular artillery projectile may include a payload module, a guidance module coupled to the payload module and a rear module coupled to the guidance module. The payload module may be selected from a plurality of interchangeable payload modules containing different payloads. The guidance module may include a transverse propulsion system to propel the modular artillery projectile transversely to a longitudinal axis of the modular artillery projectile, a global positioning system receiver, and a control system to control the transverse propulsion system responsive to the global positioning system receiver to guide the modular artillery projectile to a predetermined target position.
US08546730B2	Electric cigar lighter, universal power socket and accessory plug An electrical socket for powering an electrical/electronic accessory device having an electrical plug that is received in the socket, comprising: an electrically conductive socket well for slidably receiving the electrical plug of the electrical/electronic device; an electrical connector portion disposed distally on the socket well and comprising an insulator fastened to the socket well at a distal end thereof and having at least two electrical terminals for connecting to a vehicle electrical power source; a plurality of first electrical contacts disposed at a distal end of said socket well and extending radially and proximally from the center of said well and being electrically connected to a first of said electrical terminals of said electrical connector portion; a second of said electrical terminals of said electrical connector portion being electrically connected to said socket well; and said plurality of first electrical contacts being adapted to electrically slidably engage with an inner periphery of a hollow cylindrical electrical contact of said electrical plug.
US08546726B2	Systems and devices for determining weld cable inductance Systems, devices, and methods for measuring a peak to peak switching ripple in a voltage present on welding output terminals are provided. The systems, devices, and methods may also be utilized to determine, during a welding operation, a weld cable inductance based on the measured peak to peak voltage ripple.
US08546721B2	Seam position control for laser processing A course of a position of a positioning device is determined as a laser beam welds a workpiece at a focus area of the laser beam. The positioning device is configured to position the focus area of a laser beam on a workpiece such that a joint is formed on the workpiece. A course of the joint on the workpiece from the determined course of the position of the positioning device is estimated, and a deviation between the determined course of the position of the positioning device and the estimated course of the joint on the workpiece is calculated. The deviation represents a parameter related to the precision of the seam position control.
US08546720B2	Hybrid welding apparatus and system and method of welding A hybrid welding apparatus, and a system and method for welding at least two adjacent components having a large gap of approximately 3.0 millimeters that results in a full-penetration weld is provided. The welding system includes a hybrid welder having a defocused laser beam, an electric arc welder, and at least one bridge piece adjacent to one or more of the at least two adjacent components. The defocused laser beam and the electric arc welder are arranged and disposed to direct energy onto the at least two adjacent components to create a common molten pool operable to provide a full penetration weld to bridge the gap at a high constant weld speed, thereby joining the two adjacent components with a weld.
US08546716B2	Gas-blast circuit breaker with a radial flow opening A gas-blast circuit breaker is disclosed which includes a first contact and a second contact which can move relative to one another along a longitudinal axis. A blowout volume is arranged around the first contact. The blowout volume can be connected via a gas channel to an arc zone, in order to blow out an arc which is struck when the first contact is disconnected from the second contact. The blowout volume can be bounded radially on an outside by a separating element which separates the blowout volume from a low-pressure area. A flow opening, which allows a gas exchange, can lead in a radial direction from the low-pressure area into the blowout volume.
US08546708B2	Electrical switch with a tactile effect and a dual action A switch including a triggering member that is adapted to come to bear on two peripheral fixed contacts to make a first switchpath and that is deformable to make an electrical connection between these two fixed contacts and a central fixed contact to make a second switchpath consecutively to making the first switchpath. The triggering member may occupy an initial high rest position and a final low switching position toward which it is moved by an actuating member against a return force exerted by a spring that is disposed between the support for the contacts and the triggering member.
US08546706B2	Method and system for obtaining positioning data A position detection system for use in association with computing applications, the system comprising: a positional element for attaining a position and comprising a first emitter for emitting a substantially continuous ultrasonic waveform decodable to fix said position, and a detector arrangement for detecting said waveform in a manner permitting fixing of said position and outputting said waveform for computation, in a manner retentive of said position fixing ability.
US08546705B2	Device and method for preventing the influence of conducting material from point detection of projected capacitive touch panel This invention provides a device for preventing the influence of conducting material from point detection of projected capacitive touch panel. The device includes a first sensing layer having a plurality of first axial conductive lines isolated from each other and electrically connected to a plurality of first outside-connection conducting wires correspondingly, a second sensing layer having a plurality of second axial conductive lines isolated from each other and electrically connected to a plurality of second outside-connection conducting wires correspondingly, a signal driving line electrically connecting to the first and the second outside-connection conducting wires to provide a first sensing signal, and a sensing unit electrically connecting the first and the second outside-connection conducting wires to sense the sensing signal on the first and the second axial conductive lines. Wherein, the second sensing layer is on a dielectric layer, the first sensing layer, and a substrate in sequence.
US08546704B1	Precise count high volume preform delivery system A precise-count high-volume preform delivery system. The system employs a soft-drop conveyor system that is used to deliver preforms into a container or another location. An automatically-controlled preform counting system counts preforms before they are delivered to the conveyor, to allow the number of preforms delivered by the conveyor to be determined.
US08546699B2	Glass-ceramic substrate A glass-ceramic substrate with improved bonding strength between an insulating and ferrite layer, and method of manufacturing same are disclosed. The glass-ceramic substrate comprises a glass-ceramic layer, a ferrite layer, and interlayer means between the glass-ceramic layer and the ferrite layer. The glass-ceramic layer comprises a glass phase and a glass comprising a first crystal. The ferrite layer comprises a ferrite crystal.
US08546698B2	Wiring board and method for manufacturing the same A wiring board has a first rigid wiring board having a first wiring layer on a first main surface, a second rigid wiring board having a second wiring layer on a second main surface, a first connection portion connecting the first wiring layer and the second wiring layer, and a first interlayer insulation layer formed on the first wiring layer, the second wiring layer and the first connection portion. In such a wiring board, the first rigid wiring board and the second rigid wiring board are positioned in such a way that the first main surface and the second main surface are set at substantially the same level, and the first wiring layer and the second wiring layer are electrically connected by the first connection portion.
US08546697B2	Bundled flexible circuit board based flat cable with water resistant section A flat cable includes an enclosure sleeve that encloses a selected section of a cluster section of a flexible substrate. The enclosure sleeve has opposite ends respectively coupled to a first water resistant member and a second water resistant member. Each water resistant member includes a base forming a hollow channel and an insertion end extending from the base. The insertion end is fit to an inside or outside wall of an end of the enclosure sleeve. The first water resistant member, the second water resistant member, and the enclosure sleeve are combined together to form a water resistant section. When the flexible substrate is subjected to a stretching force in an extension direction or a torque applied in a rotation direction, the flexible substrate is allowed to undergo relative displacement with respect to the first water resistant member, the second water resistant member, and the enclosure sleeve.
US08546696B2	Printed circuit board and method for manufacturing the same A printed circuit board having a connection terminal which includes: an insulating substrate including first and second surfaces, and an end surface along an outline normal to an insertion direction of the connection terminal; at least one lead wiring layer formed on the first surface of the insulating substrate; an insulating protection film covering the lead wiring layer; at least one lead terminal layer constituting an end portion of the lead wiring layer, the lead terminal layer being formed into a strip, and having an end surface along the outline; a reinforcement body adhered on the second surface of the insulating substrate at a backside position of the lead terminal layer; wherein a distance between an outer surface of the lead terminal layer and an outer surface of the reinforcement body on the outline side is smaller than a distance therebetween on the lead wiring layer side.
US08546695B2	Grommet A grommet includes an inner tube and an outer tube coupled to the inner tube by an annular coupling section. A slant wall section of the outer tube has a curved portion at a position having an outer diameter equal to an inner diameter of a through-hole in a vehicle body panel. The curved portion has a different inclination angle from the slant wall section. An inclination angle of the slant wall section at a larger diameter side with respect to the curved portion is set to be smaller than an inclination angle at a smaller diameter side with respect to the curved portion. The slant wall section is provided on an inner peripheral surface at the smaller diameter side with a bending stress absorbing portion of which an inner surface is recessed annularly to be a smaller thickness.
US08546689B2	Service access point for a uninterruptible power supply A power system including an uninterruptible power system (UPS) and a maintenance bypass panel (MBP) The UPS has an input to receive input power and an output to provide output power. The MBP has an input to receive the output power provided by the UPS and an output to provide the input power to the input of the UPS. A busbar is configured to couple one of the input of the UPS to the output of the MBP and the output of the UPS to the input of the MBP. The busbar has a first region to couple to one of the input and the output of the UPS, a second region to couple to one of the input and the output of the MBP, and a measurement region. A cover shields the busbar from inadvertent contact and includes a small diameter aperture to permit access to the measurement region of the busbar.
US08546687B2	Gas insulated electric apparatus A foreign matters trap in which a metallic corrugated plate is arranged in a ground tank so that a line connecting portions of the corrugated plate having the same height is made parallel to a central axis of the ground tank, a metallic round rod is mounted to an corrugated end of the corrugated plate, the corrugated plate and the metallic round rod are connected electrically to each other, and a surface of the corrugated plate is covered by an insulating material. The foreign matters trap is capable of surely trapping metallic foreign matters in a gas insulated electric apparatus and suppressing concentration of an electric field to become excellent in voltage endurance and which can be readily mounted in a ground tank.
US08546682B2	Photoelectric converter and manufacturing method thereof, and photoelectric conversion module A photoelectric converter in which an intermediate layer is provided between a first photoelectric-conversion-layer including a first p-type-semiconductor-layer and a first n-type-semiconductor-layer and a second photoelectric-conversion-layer including a second p-type-semiconductor-layer and a second n-type-semiconductor-layer. The intermediate layer includes an n-type-transparent conductive-oxide-film in contact with the first n-type-semiconductor-layer and a p-type-transparent-conductive oxide-film in contact with the second p-type-semiconductor-layer respectively having a bandgap equal to or higher than 1.5 electron volts. A width of a low carrier concentration region in a film thickness direction, in which a concentration of a free carrier formed near at least one of an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the n-type-transparent-conductive-oxide-film and an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the second p-type-semiconductor-layer is equal to or lower than 1×1018 cm−3, is equal to or less than 5 nanometers.
US08546677B2	Optical instrument pickup An optoelectronic pickup for a musical instrument includes at least one light source which directs light to impinge a string of the musical instrument in at least one photoreceiver located to detect the reflected light, so as to generate an electrical signal that is responsive to string vibrations. A number of different filter approaches are disclosed that can control undesired effects of spurious light. The filter approaches may be structure-based, signal processing-based, and/or optics-based.
US08546673B2	Percussive accessory for string instrument A percussive device for a stringed instrument includes a support structure, an attachment component that attaches the support structure to the stringed instrument, one or more hammers attached to arms rotatably coupled to the support structure and one or more actuators. User activation of the actuators causes a corresponding one of the hammers to make contact with a string of the stringed instrument resulting in a rotational force applied to at least one of the hammer arms or actuators. The applied rotational force causes the hammer to be positioned out of contact with the string of the stringed instrument. The applied rotational force is overcome when an applicable force has been applied to the corresponding actuator by a user, thereby causing the hammer to contact a corresponding string of the stringed instrument.
US08546671B2	Accessory for string instruments An accessory for a string instrument including a body portion and a clamping portion that is coupled to the body portion by a connecting portion having at least one point of connection. The body portion includes at least one surface capable of altering the position or sound of one or more strings of an instrument. The body portion can include a slide, a capo, both, and/or other surfaces or features configured to alter the sound or position of the instrument's strings.
US08546670B2	Stringed instrument system A tremolo device for static retention of a plurality of musical instrument strings in a stringed instrument. The tremolo device has a body with an upper surface, a neck portion, and a plurality of strings anchored at a first end of the neck and extending over at least a portion and secured to the tremolo device at the other end of the neck portion and the body and possesses an inertia block mechanism with substantially solid construction disposed to receive and securely retain a plurality of raw instrument strings without removal of a ball end from each string. The inertia block has an upper portion, a lower portion, and a plurality of internal, longitudinally displaced, cylindrically shaped, string retaining chambers designed to pass through an entirety of the block mechanism. The string retaining chambers have an upper and lower portion corresponding with the upper and lower portions of the block.
US08546668B1	Maize variety hybrid X95B333 A novel maize variety designated X95B333 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X95B333 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X95B333 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X95B333, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X95B333. This invention further relates to methods for producing maize varieties derived from maize variety X95B333.
US08546667B1	Maize variety hybrid X05B902 A novel maize variety designated X05B902 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X05B902 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X05B902 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X05B902, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X05B902. This invention further relates to methods for producing maize varieties derived from maize variety X05B902.
US08546665B1	Maize variety hybrid X90B059 A novel maize variety designated X90B059 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X90B059 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X90B059 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X90B059, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X90B059. This invention further relates to methods for producing maize varieties derived from maize variety X90B059.
US08546662B2	Tomato hybrid PX 02461111 The invention provides seed and plants of tomato hybrid PX 02461111 and the parent lines thereof. The invention thus relates to the plants, seeds and tissue cultures of tomato hybrid PX 02461111 and the parent lines thereof, and to methods for producing a tomato plant produced by crossing such plants with themselves or with another tomato plant, such as a plant of another genotype. The invention further relates to seeds and plants produced by such crossing. The invention further relates to parts of such plants, including the fruit and gametes of such plants.
US08546661B2	Soybean variety XB30AL11 A novel soybean variety, designated XB30AL11 is provided. Also provided are the seeds of soybean variety XB30AL11, cells from soybean variety XB30AL11, plants of soybean XB30AL11, and plant parts of soybean variety XB30AL11. Methods provided include producing a soybean plant by crossing soybean variety XB30AL11 with another soybean plant, methods for introgressing a transgenic trait, a mutant trait, and/or a native trait into soybean variety XB30AL11, methods for producing other soybean varieties or plant parts derived from soybean variety XB30AL11, and methods of characterizing soybean variety XB30AL11. Soybean seed, cells, plants, germplasm, breeding lines, varieties, and plant parts produced by these methods and/or derived from soybean variety XB30AL11 are further provided.
US08546658B1	Soybean variety XB38AL11 A novel soybean variety, designated XB38AL11 is provided. Also provided are the seeds of soybean variety XB38AL11, cells from soybean variety XB38AL11, plants of soybean XB38AL11, and plant parts of soybean variety XB38AL11. Methods provided include producing a soybean plant by crossing soybean variety XB38AL11 with another soybean plant, methods for introgressing a transgenic trait, a mutant trait, and/or a native trait into soybean variety XB38AL11, methods for producing other soybean varieties or plant parts derived from soybean variety XB38AL11, and methods of characterizing soybean variety XB38AL11. Soybean seed, cells, plants, germplasm, breeding lines, varieties, and plant parts produced by these methods and/or derived from soybean variety XB38AL11 are further provided.
US08546656B1	Soybean variety XBP29005 A novel soybean variety, designated XBP29005 is provided. Also provided are the seeds of soybean variety XBP29005, cells from soybean variety XBP29005, plants of soybean XBP29005, and plant parts of soybean variety XBP29005. Methods provided include producing a soybean plant by crossing soybean variety XBP29005 with another soybean plant, methods for introgressing a transgenic trait, a mutant trait, and/or a native trait into soybean variety XBP29005, methods for producing other soybean varieties or plant parts derived from soybean variety XBP29005, and methods of characterizing soybean variety XBP29005. Soybean seed, cells, plants, germplasm, breeding lines, varieties, and plant parts produced by these methods and/or derived from soybean variety XBP29005 are further provided.
US08546654B2	Soybean cultivar S090090 A soybean cultivar designated S090090 is disclosed. The invention relates to the seeds of soybean cultivar S090090, to the plants of soybean S090090, to plant parts of soybean cultivar S090090, and to methods for producing a soybean plant produced by crossing soybean cultivar S090090 with itself or with another soybean variety. The invention also relates to methods for producing a soybean plant containing in its genetic material one or more transgenes and to the transgenic soybean plants and plant parts produced by those methods. This invention also relates to soybean cultivars, or breeding cultivars, and plant parts derived from soybean variety S090090, to methods for producing other soybean cultivars, lines or plant parts derived from soybean cultivar S090090, and to the soybean plants, varieties, and their parts derived from use of those methods. The invention further relates to hybrid soybean seeds, plants, and plant parts produced by crossing the cultivar S090090 with another soybean cultivar.
US08546650B2	Cucumber hybrid PS 14763462 and parents thereof The invention provides seed and plants of cucumber hybrid PS 14763462 and the parent lines thereof. The invention thus relates to the plants, seeds and tissue cultures of cucumber hybrid PS 14763462 and the parent lines thereof, and to methods for producing a cucumber plant produced by crossing such plants with themselves or with another cucumber plant, such as a plant of another genotype. The invention further relates to seeds and plants produced by such crossing. The invention further relates to parts of such plants, including the fruit and gametes of such plants.
US08546647B2	Pathogen inducible plant thehalose-6-phophate phophatase gene promoters and regulatory elements The invention provides plant gene promoters and regulatory elements that are root-specific and/or induced by parasitic nematodes. The promoters of the invention are useful for controlling expression of nucleic acids of interest in plants' roots. The invention also provides expression cassettes including the plant gene promoters and regulatory elements of the invention, transgenic plants containing such expression cassettes, and methods of producing such transgenic plants.
US08546646B2	Grain quality through altered expression of seed proteins The present invention is directed to compositions and methods for altering the levels of seed proteins in cereal grain. The invention is directed to the alteration of seed protein levels in plant grain, resulting in grain with increased digestibility/nutrient availability, improved amino acid composition/nutritional value, increased response to feed processing, improved silage quality, and increased efficiency of wet milling.
US08546645B2	Production of modified fatty acids in plants through rDNA targeted integration of heterologous genes The present invention relates to transgenic plants comprising a plurality of nucleic acids heterologous to said plant, each of said nucleic acid comprising a coding sequence operably linked to one or more regulatory elements for directing expression of said coding sequence in said plant, said nucleic acid being stably integrated at or adjacent to rDNA sequences, or a seed, organ, tissue, part or cell thereof, or a descendant of said plant, seed, organ, tissue, part or cell; methods of producing the transgenic plants; and methods of producing oil using the transgenic plants.
US08546643B2	Pig model for atherosclerosis The present invention relates to a genetically modified pig as a model for studying atherosclerosis. The modified pig model displays one or more phenotypes associated with atherosclerosis. Disclosed is also a modified pig comprising a mutation in the endogenous ApoE gene or part thereof, LDL gene or part thereof, LDL receptor gene, or transcriptional or translational product or part thereof. The invention further relates to methods for producing the modified pig; and methods for evaluating the effect of a therapeutical treatment of atherosclerosis; methods for screening the efficacy of a pharmaceutical composition; and a method for treatment of a human being suffering from atherosclerosis are disclosed.
US08546642B2	Absorbent article with slitted absorbent core An absorbent article, such as a sanitary napkin, includes a top sheet and a back sheet with a resilient, composite absorbent core sandwiched therebetween. To decrease the stiffness, the absorbent core includes an outer line and an inner line on each side of a longitudinal centerline. The outer line includes a plurality of slits having spaces therebetween, and the outer line extends convexly when viewed from the longitudinal centerline. The plurality of slits in the absorbent core impart better bending ability of the absorbent article, particular for stiff airlaid absorbent cores.
US08546639B2	Urine suction device A urine suction device improved to achieve quick urine which includes a urine receiver unit and a urine detector unit. The urine detector unit includes a pair of electrode assemblies adapted to output a detection signal as soon as it is wetted with urine. The pair of electrode assemblies is sandwiched between a liquid-pervious first sheet and a liquid-pervious second sheet. The first and second sheets are put flat and joined together along joint zones provided outside respective pairs of opposite side edges of the electrode assemblies. Along the respective joint zones, at least one of the first and second sheets has its thickness locally reduced and the first and second sheets are kept in close contact with each other along the joint zones and in the vicinity of the joint zones.
US08546635B1	Methods and apparatuses for preparing upgraded pyrolysis oil Methods and apparatuses for preparing upgraded pyrolysis oil are provided herein. In an embodiment, a method of preparing upgraded pyrolysis oil includes providing a biomass-derived pyrolysis oil stream having an original oxygen content. The biomass-derived pyrolysis oil stream is hydrodeoxygenated under catalysis in the presence of hydrogen to form a hydrodeoxygenated pyrolysis oil stream comprising a cyclic paraffin component. At least a portion of the hydrodeoxygenated pyrolysis oil stream is dehydrogenated under catalysis to form the upgraded pyrolysis oil.
US08546632B2	Methods for removing unsaturated aliphatic hydrocarbons from a hydrocarbon stream using an acidic molecular sieve Disclosed is a method for removing unsaturated aliphatic compounds from a hydrocarbon feed stream by contacting the hydrocarbon feed stream with an acidic molecular sieve to produce a hydrocarbon effluent stream having a lower unsaturated aliphatic content relative to the hydrocarbon feed stream. The hydrocarbon feed stream comprises an aromatic compound, a nitrogen compound, and an unsaturated aliphatic compound.
US08546629B2	Methods for co-production of alkylbenzene and biofuel from natural oils Embodiments of methods for co-production of linear alkylbenzene and biofuel from a natural oil are provided. A method comprises the step of deoxygenating the natural oils to form a stream comprising paraffins. A first portion of the paraffins are dehydrogenated to provide mono-olefins. Then, benzene is alkylated with the mono-olefins under alkylation conditions to provide an alkylation effluent comprising alkylbenzenes and benzene. Thereafter, the alkylbenzenes are isolated to provide the alkylbenzene product. A second portion of the paraffins is processed to form biofuel.
US08546627B2	Renewable compositions The present invention is directed to renewable compositions derived from fermentation of biomass, and integrated methods of preparing such compositions.
US08546626B2	Method of converting effluents of renewable origin into fuel of excellent quality by using a molybdenum-based catalyst The invention is concerned with a supported or unsupported catalyst comprising an active phase constituted by a sulfur-containing group VIB element, the group VIB element being molybdenum, and a hydrodeoxygenation process with a yield of hydrodeoxygenation product which is greater than or equal to 90% of charges from renewable sources using a catalyst according to the invention.
US08546625B2	Conversion of natural products including cellulose to hydrocarbons, hydrogen and/or other related compounds A process for the conversion of sugars and/or other biomass to produce hydrocarbons, hydrogen, and/or other related compounds is described. In one aspect, the process includes fermenting biomass to produce one or more organic intermediates, for example, a carboxylic acid, and optionally, hydrogen. The carboxylic acids may then be decarboxylated to produce carbon dioxide and one or more hydrocarbon compounds. Also described are steps to further react the hydrocarbon compounds to form polymers, hydrocarbon compounds having at least 4 carbon atoms, or the like.
US08546624B2	Azeotrope-like composition of 2-chloro-3,3,3-trifluoropropene (HCFC-1233xf) and hydrogen fluoride (HF) Provided are azeotropic and azeotrope-like compositions of 2-chloro-3,3,3-trifluoropropene (HCFO-1233xf) and hydrogen fluoride (HF). Such azeotropic and azeotrope-like compositions are useful as intermediates in the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf).
US08546623B2	Dehydrogenationhalogenation process for the production of C3 -C6-(hydro)fluoroalkenes The invention relates to a process for preparing a C3-6 hydrofluoroalkene comprising dehydrohalogenating a C3-6 hydrohalofluoroalkane in the presence of a zinc/chromia catalyst.
US08546621B2	Process for the manufacture of 3,7-dimethyl-1-octen-3-ol The present invention is directed to a process for the manufacture of 3,7-dimethyl-1-octen-3-ol comprising the following steps: a) hydrogenation of 6-methyl-5-hepten-2-on to 6-methyl-2-heptanon in the presence of hydrogen and a palladium containing catalyst on a carrier selected from the group consisting of carbon, calcium carbonate and aluminum oxide. b) reaction of 6-methyl-2-heptanon with acetylene to 3,7-dimethyl-1-octin-3-ol in the presence of ammonia and potassium hydroxide and in the absence of any additional organic solvent; c) hydrogenation of 3,7-dimethyl-1-octin-3-ol to 3,7-dimethyl-1-octen-3-ol in the presence of hydrogen and a palladium containing catalyst on a carrier selected from the group consisting of calcium carbonate, aluminum oxide, silica, porous glass, carbon or graphite, and barium sulphate, with the proviso that the catalyst additionally contains lead when the carrier is calcium carbonate. The present invention is further directed to a process for the manufacture of isophytol and vitamin E, where a thus produced 3,7-dimethyl-1-octen-3-ol is used as starting material.
US08546620B2	Ethylene glycol removal of residual glycol impurities A process includes receiving a process stream including at least about 80.0% by weight propylene glycol, and contacting the process stream with an absorbent material to produce a product stream. The absorbent material is configured to preferentially absorb ethylene glycol relative to propylene glycol.
US08546618B2	Method for preparing 3-trifluoromethyl chalcones Disclosed is a method for preparing a compound of Formula 1 wherein Q and Z are as defined in the disclosure comprising distilling water from a mixture comprising a compound of Formula 2, a compound of Formula 3, a base comprising at least one compound selected from the group consisting of alkaline earth metal hydroxides of Formula 4 wherein M is Ca, Sr or Ba, alkali metal carbonates of Formula 4a wherein M1 is Li, Na or K, 1,5-diazabicyclo[4.3.0]non-5-ene and 1,8-diazabicyclo[5.4.0]undec-7-ene, and an aprotic solvent capable of forming a low-boiling azeotrope with water. Also disclosed is a method for preparing a compound of Formula 2 comprising (1) forming a reaction mixture comprising a Grignard reagent derived from contacting a compound of Formula 5 wherein X is Cl, Br or I with magnesium metal or an alkylmagnesium halide in the presence of an ethereal solvent, and then (2) contacting the reaction mixture with a compound of Formula 6 wherein Y is OR11 or NR12R13, and R11, R12 and R13 are as defined in the disclosure. Further disclosed is a method for preparing a compound of Formula 7 wherein Q and Z are as defined in the disclosure, using a compound of Formula 1 characterized by preparing the compound of Formula 1 by the method disclosed above or using a compound of Formula 1 prepared by the method disclosed above.
US08546616B2	Polyetheramine macromonomers comprising two neighboring hydroxyl groups and their use for producing polyurethanes The object of the invention are compounds of the formula (2) wherein R1 is H, methyl or ethyl, R2 is C1- to C4 alkyl, A is a C2- to C4 alkylene group, m is number from 10 to 400, n is 1, 2, 3, 4, or 5, a method for their production and their use in the production of polyurethane prepolymers.
US08546615B2	Solid dapoxetine The present invention relates to solid racemic dapoxetine, solid dapoxetine S(+)enantiomer, processes for their preparation and their use in the pharmaceutically active compound dapoxetine acid addition salt, and pharmaceutical compositions thereof.
US08546613B2	SGK1 inhibitors for the prophylaxis and/or therapy of viral diseases and/or carcinomas The present invention relates to a compound of formulas I, Ia, Ib and II, wherein R1 to R11 are herein defined.
US08546610B2	Method for preparing phenylalanine derivatives having quinazoline-dione skeleton and intermediates for use in the preparation of the derivatives A method for preparing a phenylalanine derivative having a quinazoline-dione ring represented by the following formula (1) or a pharmaceutically acceptable salt thereof, comprising the following steps (a), (b) and (c): (a) reacting an acyl phenylalanine derivative represented by the following formula (2): with a carbonyl group-introducing reagent and a specific anthranilic acid derivative to thus form the corresponding carboxy-asymmetric urea derivative; (b) converting the carboxy-asymmetric urea derivative into the corresponding quinazoline-dione derivative in the presence of a carboxyl group-activating agent: (c) if desired, substituting an N-alkyl group for the hydrogen atom bonded to the nitrogen atom present in the quinazoline-dione ring of the quinazoline-dione derivative using an N-alkylation agent and then deprotecting the resulting product, when the substituent R3′ which is a group corresponding to R3 is protected. According to this method, there can be obtained a phenylalanine derivative having a quinazoline-dione skeleton in a industrially favorably high yield.
US08546608B2	Proteasome inhibitors and methods of using the same The present invention provides boronic acid compounds, boronic esters, and compositions thereof that can modulate apoptosis such as by inhibition of proteasome activity. The compounds and compositions can be used in methods of inducing apoptosis and treating diseases such as cancer and other disorders associated directly of indirectly with proteasome activity.
US08546607B2	Cross-coupling of phenolic derivatives Embodiments of the invention provide methods and materials for chemical cross-coupling reactions that utilize unconventional phenol derivatives as cross-coupling partners. Embodiments of the invention can be used to synthesize a variety of useful organic compounds, for example the anti-inflammatory drug flurbiprofen.
US08546605B2	Process for the preparation of isocyanates The invention provides a multistage process for continuously preparing organic, distillable polyisocyanates, preferably diisocyanates, more preferably aliphatic or cycloaliphatic diisocyanates, by reacting the corresponding organic polyamines with carbonic acid derivatives and alcohols to low molecular mass monomeric polyurethanes, and thermally cleaving said polyurethanes, in which at defined reaction stages the polyisocyanates prepared and unusable residues are separated off, and reusable by products and intermediates are recycled to upstream stages.
US08546603B2	Substituted cyclopentanes having prostaglandin activity Disclosed herein are compounds having a formula: Therapeutic methods, medicaments, and compositions related thereto are also disclosed.
US08546600B2	Slurry process for synthesis of bisphosphites and situ use thereof for producing bisphosphite The present invention provides a step-wise process for preparation of a bisphosphite. In step (a) the process prepares a phosphoromonochloridite in high yield, by contacting phosphorus trichloride with an aromatic diol in a slurry under reaction conditions and in the presence of a second aromatic diol to produce a mixture comprising the phosphoromonochloridite, the second aromatic diol, and excess PCl3. The slurry comprises less than 5 mole percent of a nitrogen base, and the organic solvent is selected for its low hydrogen chloride solubility. After removing the excess PCl3, a nitrogen base is added to effect condensation of the phosphoromonochloridite with the second aromatic diol to yield the bisphosphite. The invention particularly provides a process for preparing 6,6′-(3,3′,5,5′-tetra-tert-butylbiphenyl-2,2′-diyl)bis(oxy)didibenzo[d,f][1,3,2]dioxaphosphepine by the above route.
US08546598B2	Silane compounds having a cyclic carbon chain including an alkyne function for functionalizing solid substrates and immobilizing biological molecules on said substrates The invention relates to a silane compound including a cycloalkyne functionality, to a method for functionalising a solid substrate, and to the solid substrate thus produced. The silane compound of the invention corresponds to the formula X-E-A-Z where X is a silyl group, E is an organic spacer group, A is a single bond or a —CONH—, —NHCO—, —OCH2CONH—, —NHCOCH2O—, —O— or —S— group, and Z is a cycloalkyne or heterocycloalkyne with at least 8 members. The invention is particularly suitable for use in the field of medicine.
US08546597B2	Organic silane compound for forming Si-containing film by plasma CVD and method for forming Si-containing film An organic silane compound for forming a Si-containing film by plasma CVD is provided. The silane compound contains 2 or more silicon atoms bonded by an intervening straight chain or branched oxygen-containing hydrocarbon chain having 4 to 8 carbon atoms containing a bond represented by Cp—O—Cq wherein p and q independently represent number of carbon atoms with the proviso that 2≦p≦6 and 2≦q≦6 and the carbon chains do not contain an unsaturated bond which conjugates with the oxygen atom, wherein all of the 2 or more silicon atoms has 1 or more hydrogen atom or an alkoxy group having 1 to 4 carbon atoms.
US08546596B2	Hydrosilylation method Compounds containing carbon-carbon double bonds and/or carbon-carbon triple bonds are hydrosilylated with linear organopolysiloxanes having diorganosiloxy units and Si—H groups, produced by reacting diorganodichlorosilanes and monochlorosilanes and optionally dichlorosilanes with water in a first step, where at least one of the monochlorosilanes or dichlorosilanes contain Si—H groups to give a partial hydrolysate and gaseous hydrogen chloride, and in a second step, treating the partial hydrolysate with water to remove SiCl groups still present to form hydrochloric acid, and producing a hydrolysate containing the organopolysiloxanes.
US08546582B2	Sulfenamide, vulcanization accelerator containing the sulfenamide for rubber, and process for producing the vulcanization accelerator A sulfenamide vulcanization accelerator is provided that acts satisfactorily slowly on a vulcanization reaction, produces no carcinogenic nitrosamine, and is free from environmental hygiene problems such as bioaccumulation. Also provided is an N-alkyl-N-t-butylbenzothiazole-2-sulfenamide represented by formula [I]. The vulcanization accelerator is a vulcanization accelerator for rubber, containing this compound. Furthermore provided is a process for producing the vulcanization accelerator. wherein R represents methyl, ethyl, n-propyl, or n-butyl.
US08546578B2	Iodonium Cyclophanes for SECURE arene functionalization This disclosure relates to compounds, reagents, and methods useful in the synthesis of aryl fluorides, for example, in the preparation of 18F labeled radiotracers. For example, this disclosure provides universal “locked” aryl substituents that result in StereoElectronic Control of Unidirectional Reductive Elimination (SECURE) from diaryliodonium salts. The reagents and methods provided herein may be used to access a broad range of compounds, including aromatic compounds, heteroaromatic compounds, amino acids, nucleotides, and synthetic compounds.
US08546575B2	NIP thiazole derivatives as inhibitors of 11-beta-hydroxysteroid dehydroge-nase-1 The present invention relates to NIP thiazole derivatives of formula (I) as selective inhibitors of the enzyme 11-beta-hydroxysteroid dehydrogenase type 1 (11-β-HSD-1) and the use of such compounds for the treatment and prevention of metabolic syndrome, diabetes, insulin resistance, obesity, lipid disorders, glaucoma, osteoporosis, cognitive disorders, anxiety, depression, immune disorders, hypertension and other diseases and conditions.
US08546570B2	Process for preparing cationic rhodium complexes A process is described for the synthesis of a cationic [rhodium diolefin phosphorus ligand] complex comprising the steps of: (a) reacting a rhodium-diolefin-1,3-diketonate and an acid in a ketone solvent, (b) adding a stabilising olefin to form a stabilised cationic rhodium compound, and (c) mixing a phosphorus ligand with the solution of the stabilised cationic rhodium compound to form a solution of the cationic [rhodium diolefin phosphorus ligand] complex. The solution may be used directly or the complex recovered. In one embodiment, the solution may be combined with a co-solvent and the ketone removed to give a new catalyst solution, from which the complex may be recovered.
US08546564B2	Inhibitors of fatty acid amide hydrolase Provided herein are compounds of formula (I) or pharmaceutically acceptable salts, solvates or prodrugs thereof, or mixtures thereof, wherein Z1, Z2, X1, X2, X3, R1, R2 R3, m and n are defined herein. Also provided are pharmaceutically acceptable compositions that include a compound of formula I and a pharmaceutically acceptable excipient. Also provided are methods for treating FAAH-mediated disorders comprising administering to a subject in need thereof a therapeutically effective amount of a compound or composition of the present invention.
US08546562B2	Substituted porphyrins The present invention relates, in general, to a method of modulating physiological and pathological processes and, in particular, to a method of modulating cellular levels of oxidants and thereby processes in which such oxidants are a participant. The invention also relates to compounds and compositions suitable for use in such methods.
US08546561B2	Nano-catalytic-solvo-thermal technology platform bio-refineries Methods of making glucose and/or furfural from biomass require one or more supercritical fluids that may be used to process biomass, cellulose from the biomass, and/or xylose from the biomass. Examples of supercritical fluids for use in processing biomass include ethanol, water, and carbon dioxide at a temperature and pressure above the critical points for ethanol and carbon dioxide but at a temperature and/or pressure below that of the critical point for water. A supercritical fluid containing carbon dioxide and water may be used to convert cellulose to glucose or convert xylose to furfural. The fluid has a temperature and pressure above the critical point of carbon dioxide, but at least one of the temperature and pressure is below the critical point for water.
US08546560B2	Solvo-thermal hydrolysis of cellulose The invention relates to a process for hydrolyzing cellulose, comprising: (a) contacting cellulose with a fluid mixture comprising supercritical CO2 and sub-critical or near-critical water to form a reactant mixture at a first temperature and first pressure for a first time period, wherein a reaction occurs and forms one or more hydrolysis products; (b) quenching the reaction; and (c) recovering at least one hydrolysis product.
US08546557B2	Methods of making nucleoside tetraphosphate analogs The invention provides compounds and methods for making adenosine-ribofuranoside tetraphosphate compounds. The compounds are contemplated to have activity at the P2Y receptor and may be used in the treatment of medical disorders such as cystic fibrosis and upper respiratory disorders.
US08546556B2	Carbocyclic alpha-L-bicyclic nucleic acid analogs The present invention provides novel carbocyclic α-L-bicyclic nucleosides and oligomeric compounds comprising at least one of these carbocyclic α-L-bicyclic nucleosides. The carbocyclic α-L-bicyclic nucleosides are useful for enhancing one or more properties of the oligomeric compounds they are incorporated into including nuclease resistance.
US08546555B2	Cochleate compositions directed against expression of proteins Disclosed herein are novel siRNA-cochleate and morpholino-cochleate compositions. Also disclosed are methods of making and using siRNA-cochleate and morpholino-cochleate compositions.
US08546554B2	Lipid formulated compositions and methods for inhibiting expression of Serum Amyloid A gene The invention relates to a double-stranded ribonucleic acid (dsRNA) targeting a Serum Amyloid A (SAA) gene, and methods of using the dsRNA to inhibit expression of SAA.
US08546553B2	Prokaryotic RNAi-like system and methods of use Provided herein are methods for inactivating a target polynucleotide. The methods use a psiRNA having a 5′ region and a 3′ region. The 5′ region includes, but is not limited to, 5 to 10 nucleotides chosen from a repeat from a CRISPR locus immediately upstream of a spacer. The 3′ region is substantially complementary to a portion of the target polynucleotide. The methods may be practiced in a prokaryotic microbe or in vitro. Also provided are polypeptides that have endonuclease activity in the presence of a psiRNA and a target polynucleotide, and methods for using the polypeptides.
US08546552B2	TMPRSS2 for the diagnosis of prostate disease Described herein are methods, compositions and kits directed to the detection the 5′ portion of TMPRSS2 mRNA for the detection and diagnosis of prostate disease including prostate cancer and benign prostatic hyperplasia.
US08546549B2	Processes for the convergent synthesis of calicheamicin derivatives This invention describes processes for the convergent synthesis of calicheamicin derivatives, and similar analogs using bifunctional and trifunctional linker intermediates.
US08546547B2	Polymer conjugates of Box-A of HMGB1 and Box-A variants of HMGB1 The present invention relates to novel polymer conjugates of polypeptide variants of the HMGB1 high affinity binding domain Box-A (HMGB1 Box-A) or of a biologically active fragment of HMGB1 Box-A. Further, the invention relates to novel polymer conjugates of polypeptide variants of the HMGB1 high affinity binding domain Box-A (HMGB1 Box-A). Moreover, the present invention concerns the use of said polymer conjugates of polypeptide molecules of HMGB1 Box-A to diagnose, prevent, alleviate and/or treat pathologies associated with extracellular HMGB1 and/or associated with an increased expression of RAGE.
US08546545B2	Antibody to SOST peptide The present invention is directed to isolated polypeptides and antibodies suitable for producing therapeutic preparations, methods, and kits relating to bone deposition. One objective of the present invention is to provide compositions that improve bone deposition. Yet another objective of the present invention is to provide methods and compositions to be utilized in diagnosing bone dysregulation. The therapeutic compositions and methods of the present invention are related to the regulation of Wise, Sost, and closely related sequences. In particular, the nucleic acid sequences and polypeptides include Wise and Sost as well as a family of molecules that express a cysteine knot polypeptide.
US08546540B2	Antibody targeting osteoclast-related protein Siglec-15 To provide a method of detecting abnormal bone metabolism by using a gene strongly expressed in an osteoclast; a method of screening a compound having a therapeutic and/or preventive effect on abnormal bone metabolism; and a pharmaceutical composition for treating and/or preventing abnormal bone metabolism. Provision of a method of detecting abnormal bone metabolism by using the expression of human Siglec-15 gene as an index; a pharmaceutical composition containing an antibody which specifically recognizes human Siglec-15 and has an activity of inhibiting osteoclast formation; and the like.
US08546539B2	Fc receptor-binding polypeptides with modified effector functions Disclosed are processes for producing a variant polypeptide (e.g. antibodies) having modified binding characteristics for human Fc gamma receptor IIA (CD32A) leading to increased inhibition of proinflammatory mediators while retaining binding to a target antigen via its Fv portion, which processes comprise altering the polypeptides by substitution of at least two amino acid residues at EU position 325, 326 or 328 of a human IgG CH2 region for a sequence selected from SAAF, SKAF, NAAF and NKAF. Also disclosed are molecules, particularly polypeptides, more particularly immunoglobulins (e.g. antibodies) that include a variant CDR3 region, wherein the variant CDR3 region includes at least one amino acid modified relative to a wild-type CDR3 region. The polypeptides that can be generated according to the methods of the invention are highly variable, and they can include antibodies and fusion proteins that contain an Fc region or a biologically active portion thereof.
US08546537B2	Streptavidin having low immunogenicity and use thereof It is an object of the present invention to provide a mutant streptavidin wherein the immunogenicity (antigenicity) in mammals of a streptavidin is reduced. The present invention provides a mutant streptavidin, which comprises an amino acid sequence in which (a) the arginine residue at position 72 is substituted with another amino acid residue, and (b) any one or more of the tyrosine residue at position 10, the tyrosine residue at position 71, the glutamic acid residue at position 89, the arginine residue at position 91, and the glutamic acid residue at position 104 are substituted with other amino acid residues, with respect to the amino acid sequence of a core streptavidin as shown in SEQ ID NO: 2, and which has decreased immunogenicity as compared with that of a wild-type streptavidin.
US08546535B2	Lytic domain fusion constructs and methods of making and using same The invention relates to fusion constructs, methods of using fusion constructs and methods of treating undesirable or aberrant cell proliferation or hyperproliferative disorders, such as tumors, cancers, neoplasia and malignancies.
US08546531B2	Methods and reagents for preparing multifunctional probes Multifunctional probes are synthesized in a single step using peptide scaffold-based multifunctional single-attachment-point reagents. To obtain multifunctional probes using the methods of the invention, a substrate (e.g., a nanoparticle, polymer, antibody, protein, low molecular weight compound, drug, etc.) is reacted with a multifunctional single-attachment-point (MSAP) reagent. The MSAP reagents can include three components: (i) a peptide scaffold, (ii) a single chemically reactive group on the peptide scaffold for reaction of the MSAP with a substrate having a complementary reactive group, and (iii) multiple functional groups on the peptide scaffold. The peptide scaffold can include any number of residues; however, for ease of synthesis and reproducibility in clinical trials, it is preferred to limit the residues in the peptide to 20 or less. The reagent can be prepared to yield a predetermined stoichiometric ratio of the functional groups on the scaffold such that the probe has a fixed stoichiometric ratio of the functional groups.
US08546526B2	Selective αvβ3 receptor peptide antagonist for therapeutic and diagnostic applications The present invention is related to new peptide antagonists of αvβ3 receptor, designed on the basis of the crystal structure of integrin αvβ3 in complex with c(RGDf[NMe]V) and the NMR structure of echistatin. These peptides are potent and selective antagonists of the αvβ3 receptor and can be used as novel anticancer drugs and/or new class of diagnostic non-invasive tracers as suitable tools for αvβ3-targeted therapy and imaging.
US08546523B2	NPR-B agonists Disclosed are novel compounds having NPR-B agonistic activity. Preferred compounds are linear peptides containing 8-13 conventional or non-conventional L- or D-amino acid residues connected to one another via peptide bonds.
US08546521B2	Method for fabricating nanoparticles Systems and methods are provided for filtering a fluid containing nanoparticles. The systems and methods generally include introducing a stream of the nanoparticle-containing fluid into a holding vessel, and extracting at least a part of a nanoparticle-containing fluid accumulated in the holding vessel. The extracted nanoparticle-containing fluid is passed through a filtration module to separate a nanoparticle-containing retentate from a permeate, and the retentate is returned to the vessel. The filtration cycle can be repeated until a desired concentration of the nanoparticles is achieved in the holding vessel. In many embodiments, the generation of the nanoparticle-containing fluid and its filtration are performed concurrently.
US08546517B2	Poly(bisoxalamides) The present invention generally relates to a poly(bisoxalamide) and a process for preparing and article comprising the poly(bisoxalamide).
US08546516B2	Transparent polyimide-polyester compositions, method of manufacture, and articles thereof A thermoplastic polymer composition comprises a combination of: 40 to 60 pbw, of a polyetherimides, polyetherimide sulfones, or combination thereof having a weight average molecular weight from 5,000 to 80,000 Daltons; 40 to 60 pbw of a polyethylene terephthalate, the polyethylene terephthalate having a diethylene glycol content from 0.1 to 4 wt %, based on the weight of the polyethylene terephthalate, an intrinsic viscosity that is more than 0 and less than 0.83 dl/g, and carboxylic acid end groups in an amount from 10 to 150 meq/Kg; from 0 pbw to 1 pbw, based on 100 pbw of the polymer composition of a stabilizer selected from phenol-containing stabilizers, phosphorus-containing stabilizers, or a combination thereof; and, based on the weight of the polyethylene terephthalate, 10 to 300 antimony; 0 to 300 ppm of cobalt; and 0 to 300 ppm of titanium; wherein the polymer composition is bisphenol A free.
US08546514B2	Continuous process for manufacturing aliphatic polycarbonates from carbon dioxide and epoxides Disclosed is a continuous process for manufacturing aliphatic polycarbonate by polymerizing carbon dioxide and one or more epoxide compound in the presence of catalyst, in which carbon dioxide, one or more epoxide compound, and the catalyst are continuously supplied to polymerization reactor to produce aliphatic polycarbonate, separate unreacted carbon dioxide and epoxide compound and recycle them as raw materials.
US08546507B2	Silicone polyoxamide process additives for high clarity applications There is provided a silicone-polyoxamide process additive for use in high clarity applications, articles made using the silicone-polyoxamide process additive, and methods for making these articles.
US08546503B2	Method for controlling anionic polymerization This invention deals with an approach to control anionic polymerization. The anionic polymerization is conducted by adding a kind of initiator ligand compound, directly or in the form of solution into the monomer or initiator at the same or different time, or at different stages. The metal atoms in the ligand can form the association with the initiator cations, while the alkyloxy groups in the initiator ligand can restrict the entering channel of the addition of the monomers due to their relatively large volume or steric hindrance. Therefore, the initiator ligand compound can restrict the rate of anionic polymerization, restrain the side reaction, and make the anionic polymerization possible to be conducted at room or even higher temperature. The molar ratio of initiator ligand compound to initiator is from 0.01:1 to 20:1. Compared with present technologies, the method of this invention can control and adjust the homopolymerization and copolymerization rate, side reactions and the polymerization temperature, and make it possible to industrialize.
US08546501B2	Catalyst compounds and use thereof This invention relates to Group 4 catalyst compounds containing di-anionic tridentate nitrogen/oxygen based ligands. The catalyst compounds are useful, with or without activators, to polymerize olefins, particularly α-olefins, or other unsaturated monomers. Systems and processes to oligomerize and/or polymerize one or more unsaturated monomers using the catalyst compound, as well as the oligomers and/or polymers produced therefrom are also provided.
US08546498B2	Method for producing water-absorbing polymer particles by polymerizing droplets of a monomer solution A process for producing water-absorbing polymer particles by polymerizing droplets of a monomer solution in a surrounding gas phase in a reaction chamber, wherein the monomer solution is metered into the reaction chamber via at least one bore, and the diameter is from 210 to 290 μm per bore and the metering rate is from 0.9 to 5 kg/h per bore.
US08546497B2	Reactor for propylene polymerization and process for producing propylene polymer A propylene polymerization reaction apparatus and a production method of a propylene-based polymer are capable of producing a continuous multi-stage polymer in low cost, high productivity and stably, and significantly reducing generation amount of an off-specification product accompanying change of polymerization condition, in multi-stage continuous vapor phase polymerization method of a propylene-based polymer using a catalyst for olefin polymerization. A reaction apparatus for producing a propylene-based polymer by a multi-stage continuous vapor phase polymerization method is used. One or more reactor of a horizontal-type reactor having inside a stirring machine which rotates around a horizontal axis, and a continuous stirred tank reactor to be connected to the horizontal-type reactor are provided, and a production method of a propylene-based polymer using the same.
US08546496B2	Process for preparing a bimodal polyethylene product in a single loop reactor The present invention relates to a process for preparing a bimodal polyethylene product in a single loop reactor, comprising polymerizing ethylene monomer and optionally one or more olefin co-monomers in the presence of a single heterogeneous polymerization catalyst consisting of a metallocene-alumoxane catalyst immobilized on a porous support wherein said metallocene comprises only one transition metal. Said polymerization catalyst consists of two physically different fractions of support particles onto which said metallocene-alumoxane catalyst is immobilized.
US08546490B2	Injection molded article comprising polypropylene and polylactic acid A film comprising a polylactic acid and polypropylene blend having a haze of from about 10% to about 95% and a gloss 45° of from about 50 to about 125. A method of producing an oriented film comprising blending polypropylene and polylactic acid to form a polymeric blend, forming the polymeric blend into a film, and orienting the film. A method of producing an injection molded article comprising blending polypropylene and polylactic acid to form a polymeric blend, injecting the polymeric blend into a mold, and forming the article.
US08546487B2	Cationic poly (amino acids) and uses thereof The present invention provides an efficient delivery system for a nucleic acid, more specifically, a cationic poly(amino acid) that has a side chain having a plurality of different amine functional groups in a moiety including a cationic group and that has a hydrophobic group introduced into part of the side chain, and a polyion complex (PIC) of the poly(amino acid) and an oligo- or polynucleotide.
US08546486B2	Low VOC thermosetting polyester acrylic resin for gel coat Low VOC thermosetting polyester acrylic resins are made by esterification of unsaturated epoxide such as glycidyl methacrylate, and a polyacid which is the half-ester formed by reacting an acid or its anhydride with a polyol is disclosed. The obtained low viscosity resin is useful for making a low or zero VOC gel coat with excellent hydrolytic and weather resistance.
US08546484B2	UV-shielding silicone coating composition and coated article A UV-shielding silicone coating composition comprises (A) a dispersion in a dispersing medium of composite zinc oxide nanoparticles which are obtained by coating zinc oxide nanoparticles with an oxide or hydroxide of Al, Si, Zr or Sn, the dispersion having a photocatalytic degradability of up to 25%, (B) a silicone resin, (C) a curing catalyst, and (D) a solvent, the solids content of composite zinc oxide nanoparticle dispersion (A) being 1 to 50% by weight based on silicone resin (B). The composition is transparent to visible light, mar resistant, UV-shielding, weatherable, and durable.
US08546483B2	Oil-in-water organopolysiloxane emulsion composition, cosmetic ingredient comprising this composition, and method of producing a hair cosmetic using this composition To provide a highly storage-stable nonionic oil-in-water organosiloxane emulsion composition that substantially does not contain ionic surfactant and that on a long-term basis does not undergo separation of the emulsion composition. An oil-in-water organosiloxane emulsion composition that characteristically comprises (A) 100 weight parts of organosiloxane, (B) 0.5 to 35 weight parts of organic-modified organosiloxane, (C) 0.5 to 35 weight parts of nonionic surfactant, (D) 0.5 to 15 weight parts of water-soluble solvent, and (E) water, wherein the content of (F) ionic surfactant in the composition is less than 0.1 weight part per 100 weight parts component (A).
US08546482B2	Low odor compositions and low odor coating compositions This invention provides stable aqueous compositions including stable coating compositions, and methods of their production. The stable aqueous compositions and stable aqueous coating compositions comprise one or more emulsion-polymerized addition polymer, one or more carboxylesterase enzyme, and one or more carboxylesterase deactivating agent, such that the ester hydrolysis activity in the composition is less than 0.010 micromole/minute, and wherein the aqueous composition has a headspace volatile organic compound (VOC) content, as measured by headspace gas chromatography-mass spectrometry (GC-MS) at 33° C., of less than 10 ppm of organic carboxylester with a normal boiling point of less than 150° C. and more than 50 ppm of mono-alcohol with a formula molecular weight of less than 76. The carboxylesterase enzyme is employed to minimize the free carboxylester content in the composition, thereby providing a low odor composition, and the carboxylesterase is deactivated in situ in order to minimize the residual carboxylesterase enzyme activity.
US08546481B2	Aqueous dispersion containing polyolefin graft copolymer An aqueous dispersion containing a graft copolymer satisfying (a) to (e) and water: (a) a graft rate is 1 to 150% by mass, (b) a weight average molecular weight is 500 to 400000, (c) a molecular weight distribution is 1.5 to 4, (d) a main chain containing a monomer unit having a hydrophilic group and (e) an α-olefin homopolymerization or α-olefin/ethylene copolymerization side chain, wherein a mesopentad ratio [mmmm] of the polymerization chain is 30 to 80 mole %.
US08546478B2	Thermoplastic elastomer composition and method for producing the same Disclosed is a method for producing a thermoplastic elastomer composition having a phase structure comprising a continuous phase comprising at least one thermoplastic resin and a disperse phase comprising dynamically crosslinked elastomer particles finely dispersed in the continuous phase, the method being characterized by dispersing in at least one crosslinkable elastomer component furnace carbon black having a BET nitrogen adsorption specific surface area of from 100 to 260 m2/g and a primary particle average particle diameter of from 10 to 25 nm in an amount of 1 to 15 parts by weight with respect to 100 parts by weight of the at least one crosslinkable elastomer component, prior to or during dynamic crosslinking.
US08546475B2	Infrared reflecting black pigment, and paint and resin composition using the infrared reflecting black pigment The present invention provides an inexpensive infrared reflecting black pigment which comprises Fe and Mn but comprises no harmful elements, and exhibits an excellent infrared reflecting property. The infrared reflecting black pigment according to the present invention comprises a compound comprising Fe, Mn and at least one element selected from the group consisting of Mg, Al, Ca, Si, Sr and Ba, and has a blackness (L* value) of not more than 30 and a solar radiation reflectance of not less than 15%.
US08546472B2	Polyesters based on 2-methylsuccinic acid The present invention relates to a polyester comprising repeat units based on at least one aliphatic dicarboxylic acid or an ester-forming derivative thereof (component A1), at least one aromatic dicarboxylic acid or an ester-forming derivative thereof (component A2), at least one diol (component B), optionally at least one sulfo-containing compound (component A3) and optionally at least one trifunctional crosslinking agent as component C1 and/or at least one difunctional chain extender as component C2, component A1 comprising 2-methylsuccinic acid or an ester-forming derivative thereof, to a process for preparing the inventive polyester, to the mixtures comprising the inventive polyester, to the use of the inventive polyesters or of the inventive mixtures for production of moldings, films, adhesives, foams or fibers, and to moldings, films, adhesives, foams or fibers comprising at least one inventive polyester or at least one inventive mixture.
US08546469B2	Glass fiber-reinforced polyester resin composition and molded product using the same A glass fiber-reinforced polyester resin composition including: (A) about 30 to about 80 wt % of two or more kinds of polyester resin; (B) about 20 to about 70 wt % of a vinyl-based copolymer including an acrylic-based graft copolymer, a rubber modified vinyl-based graft copolymer, a copolymer of aromatic vinyl monomers and unsaturated nitrile monomers, or a combination thereof; and (C) about 10 to about 100 parts by weight of glass fiber, based on about 100 parts by weight of the total amount of the polyester resin (A) and the vinyl-based copolymer (B), wherein the polyester resin includes polyethylene terephthalate resin having crystallinity of about 40% or more, is provided.
US08546466B2	Image recording composition, ink set for image recording, recording apparatus, and image recording method According to the invention, there is provided an image recording composition comprising a curable material capable of immobilizing a colorant material in a received ink and curable by an external stimulus.
US08546465B2	Aqueous ink for inkjet An aqueous ink for an inkjet, comprising a pigment, a polymer compound that coats the pigment, a water-soluble organic solvent, and water, wherein the polymer compound has a β-diketone group and a cationic salt-forming group, and also includes a cross-linked structure based on a siloxane linkage.
US08546464B2	Rubber compositions including metal-functionalized polyisobutylene derivatives and methods for preparing such compositions A composition includes a vulcanizable diene rubber, a silica filler, and a metal-functionalized polyisobutylene succinic anhydride derivative. In one embodiment the composition has a reduced amount of oil and may include no oil. A tire tread composition includes, a silica filler, a metal-functionalized polyisobutylene succinic anhydride derivative, a rubber matrix, an optional oil, and one or more components selected from the group consisting of carbon black, vulcanizing agent, vulcanization accelerator, tackifier resin, antioxidant, wax, peptizer, vulcanization retarder, activator, processing additive, plasticizer, pigments, and antiozonant. A method for making the rubber composition and the tire tread is also provided.
US08546462B2	Bone cement system for bone augmentation A bone cement is provided that includes a solid component and a liquid component. The solid component and liquid component are mixed together to form the bone cement. After completion of the solid and liquid component mixing, the bone cement has an initial viscosity effective for manual application or manual injection onto or into a targeted anatomical location, e.g., bone, and the cement has stable viscosity range that over both time and temperature is effective for uniformly filling the targeted anatomical location, for example an osteoporotic bone or a fractured vertebral body, with minimal to no leakage of the cement from the targeted anatomical location. Additionally, both the initial viscosity and the stable viscosity of the bone cement are within a range that renders the bone cement effective for injection with a manually operated syringe or multiple syringes.
US08546459B2	Dental filling/restoration kit Provided is a filling/restoring material, including a photopolymerization initiator of a quaternary system formed by combining an α-diketone compound, an aliphatic amine compound, an aromatic amine compound, and a photoacid generator, in which even when the filling/restoring material is filled and cured on a cured layer of a dental adhesive material including a radical-polymerizable monomer having an acidic group, the filling/restoring material undergoes sufficient curing up to a contact interface between the filling/restoring material and the cured layer, thereby providing high adhesive strength stably. Also provided is a dental filling/restoration kit, including: a filling/restoring material including: a polymerizable monomer having no acidic group; a basic inorganic material; and a photopolymerization initiator formed by at least combining: an α-diketone compound; an aliphatic amine compound; an aromatic amine compound; and a photoacid generator; and an adhesive material, which is used for adhesion between a tooth and the filling/restoring material by curing the adhesive material before filling the filling/restoring material, the adhesive material including: a polymerizable monomer including a polymerizable monomer having an acidic group; and a polymerization initiator.
US08546450B1	Treatment of pain with topical diclofenac compounds The field involves compositions useful for pain relief, including diclofenac solution and gel formulations, in particular methods of use thereof, articles of manufacture and kits that provide novel preclinical, clinical and other information to users.
US08546449B2	Methods and compositions for the generation of peracetic acid on site at the point-of-use Methods and compositions for the generation of a peroxyacetic acid sanitizer in proximity to the point-of-use are disclosed. These methods comprise introducing a hydrogen peroxide-acetyl precursor solution to water, mixing, and then adding an aqueous source of a alkali metal or earth alkali metal hydroxide. Triacetin is a preferred acetyl precursor and is converted rapidly and with a high conversion rate into peracetic acid. These methods produce solutions with a high level of peracetic acid. Methods for preparing the hydrogen peroxide-acetyl precursor solution are also provided. Also disclosed are solid compositions comprising a liquid acetyl precursor, a water-soluble source of hydrogen peroxide, and a water-soluble source of alkalinity. The solid composition is a freely-flowable solid that is used as a bleaching agent and a stain remover for the treatment of articles such as fabrics, dentures, textile garments, and equipment used in the food and beverage industry.
US08546447B2	Treatment of acne using derivatives of 5-aminolevulinic acid The invention provides use of a photosensitiser, which is a derivative (e.g., an ester) of 5-aminolevulinic acid (5-ALA) or a pharmaceutically acceptable salt thereof, in the manufacture of a medicament for use in the prevention or treatment of acne.
US08546446B2	Anionic isosorbide derivatives and their use Disclosed are isosorbide derivatives according to the following general formula wherein R represent a hydrogen atom, or an alkyl group with 6 to 22 C-atoms, or an acyl group, or a group X—SO3M, and M stands for a cation, a hydrogen atom or an alkali metal atom or an ammonium or an alkylammonium ion, and X represents an alkoxylated derivative (AO)n wherein AO represents a group C2H4O, or C3H6O, or any mixtures thereof, and the index n is zero or 1 to 20, and p represents a number between 1 and 10, preferably between 1 and 4, and the use thereof to prepare cleansers, detergents, personal care compositions, or cosmetic compositions.
US08546432B2	Tetrazolones as inhibitors of fatty acid synthase Provided herein are tetrazolone FASN inhibitors of the formula (I): or a pharmaceutically acceptable form thereof; wherein the variables RA, RB and RC are defined herein. Also provided herein are pharmaceutical compositions of the compounds provided herein as well as methods of their use for the treatment of various disorders such as hyperproliferative disorders, inflammatory disorders, obesity-related disorders and microbial infections.
US08546425B2	Folate receptor binding conjugates of antifolates Conjugates of antifolates, releasable linkers, and drugs, and pharmaceutical compositions containing them are described. The conjugates are useful for treating diseases arising from pathogenic cell populations. Methods for treating such diseases are also described.
US08546422B2	Azaindole derivatives as CRTH2 receptor antagonists Compounds of formula I are antagonists of the PGD2 receptor, CRTH2, and as such are useful in the treatment and/or prevention of CRTH2-mediated diseases such as asthma.
US08546420B2	4, 5-ring annulated indole derivatives for treating or preventing of HCV and related viral infections The present invention relates to 4,5-ring annulated indole derivatives of formula (I), compositions comprising at least one 4,5-ring annulated indole derivatives, and methods of using the 4,5-ring annulated indole derivatives for treating or preventing a viral infection or a virus-related disorder in a patient, wherein ring Z of formula (I), is cyclohexyl, cyclohexenyl, 6-membered heterocycloalkyl, 6-membered heterocycloalkenyl, 6-membered aryl or 6-membered heteroaryl, wherein R1, R2, R3, R6, R7 and R10 are as described herein.
US08546418B2	Peripheral opioid receptor antagonists and uses thereof The present invention provides a compound of formula I: wherein R1, R2, R2′ and X′ are as defined and described herein, methods of manufacture thereof and compositions thereof, useful for example as peripheral mu opioid receptor antagonists in treatment of side effects of opioid administration.
US08546415B2	Bis-pyridino containing compounds for the use in the treatment of CNS pathologies N-n-Alkylation of nicotine converts nicotine from an agonist into an antagonist specifically for neuronal nicotinic acetylcholine receptor subtypes mediating nicotine-evoked dopamine release. Conformationally restricted analogs exhibit both high affinity and selectivity at this site, and are able to access the brain due to their ability to act as substrates for the blood-brain barrier choline transporter.
US08546414B2	Ion channel modulators and methods of use In general, the invention relates to novel 4-phenylpyrimidine compounds useful as ion channel modulators. It has now been found that compounds of this invention, and pharmaceutically acceptable compositions thereof, are useful as inhibitors of voltage-gated sodium channels and/or calcium channels for the treatment of pain.
US08546408B2	Fused heteroaryl pyridyl and phenyl benzenesuflonamides as CCR2 modulators for the treatment of inflammation Fused heteroaryl pyridyl benzenesulfonamides are provided that act as potent antagonists of the CCR2 receptor. The compounds are generally aryl sulfonamide derivatives and are useful in pharmaceutical compositions, methods for the treatment of CCR2-mediated diseases and as controls in assays for the identification of CCR2 antagonists.
US08546406B2	Heterocyclic compounds as metap-2 inhibitors Compounds of the formula I, in which D, X, Y, Z, R and R1 have the meanings indicated in Claim 1, are inhibitors of methionine aminopeptidase and can be employed for the treatment of tumors.
US08546404B2	Compounds that are ERK inhibitors Disclosed are the ERK inhibitors of formula 1.0: and the pharmaceutically acceptable salts, esters and solvates thereof. Q is a piperidine or piperazine ring that can have a bridge or a fused ring. The piperidine ring can have a double bond in the ring. All other substitutents are as defined herein. Also disclosed are methods of treating cancer using the compounds of formula 1.0.
US08546403B2	Compounds that modulate intracellular calcium Described herein are compounds and pharmaceutical compositions containing such compounds, which modulate the activity of store-operated calcium (SOC) channels. Also described herein are methods of using such SOC channel modulators, alone and in combination with other compounds, for treating diseases or conditions that would benefit from inhibition of SOC channel activity.
US08546401B2	5,6-disubstituted oxindole-derivatives and use thereof for treating vasopressin-dependent diseases The present invention relates to novel 5,6-disubstituted oxindole derivatives and pharmaceutically acceptable salts thereof, and pharmaceutical compositions comprising such derivatives, and to the use of such derivatives for the manufacture of a medicament, and methods of treating disorders in a subject in need thereof, such as vasopressin-dependent disorders, using 5,6-disubstituted oxindole derivatives.
US08546400B2	1,3-Oxazole-4-carboxamides, 1,3-Thiazole-4-carboxamides, and 1,3-Imidazole-d-carboxamides as Inhibitors of cyclin Dependent kinases Oxazole derivatives are described. The inventive compounds are useful as kinase inhibitors, and may be used in the treatment of cancer, such as prostate cancer, lung cancer, breast cancer, colon cancer, leukemia, CNS cancer, melanoma, ovarian cancer, and renal cancer.
US08546397B2	DNA methylation inhibitors A number of DNA methylation inhibitors are described. The DNA methylation inhibitors were identified using a two-component enhanced green fluorescent protein reporter system to screen a compound library containing procainamide derivatives. The DNA methylation inhibitors can be used for cancer therapy and prevention.
US08546396B2	N-(hetero)aryl, 2-(hetero)aryl—substituted acetamides for use as Wnt signaling modulators The present invention relates to compounds of formulae 1 and 2 and methods for modulating the Wnt signaling pathway using these compounds, wherein A1, A2, B, Y and Z all represent rings.
US08546393B2	6-triazolopyridazine sulfanyl benzothiazole derivatives as MET inhibitors The disclosure relates to compounds of formula (I): wherein , A, W, X, and Ra are as defined in the disclosure, and salts thereof, and to pharmaceutical compositions comprising said compounds, to processes for preparing them, and to their use as medicaments, in particular as MET inhibitors.
US08546386B2	Corrosion and microbial control in hydrocarbonaceous compositions Provided are additives of formula I for use in hydrocarbonaceous compositions, such as petroleum or liquid fuels: (I) wherein R1, R2, R3, R4, and R5 are as defined herein. The additives improve the corrosion resistance of the compositions. The additives also enhance the antimicrobial efficacy of any added biocides contained in such compositions.
US08546381B2	Bridged heterocyclic compounds and methods of use This disclosure relates to new compounds that may be used to modulate a histamine receptor in an individual. Novel compounds are described, including new bridged heterocyclic [4,3-b]indole compounds. Pharmaceutical compositions are also provided. Pharmaceutical compositions comprising the compounds are also provided, as are methods of using the compounds in a variety of therapeutic applications, including the treatment of a cognitive disorder, psychotic disorder, neurotransmitter-mediated disorder and/or a neuronal disorder.
US08546380B2	Aminodihydrothiazine derivatives A composition having BACE 1 inhibitory activity containing a compound represented by the formula (I): wherein ring A is an optionally substituted heterocyclic group; E is lower alkylene; X is S; R1 is a hydrogen atom or lower alkyl; R2a, R2b, R3a, R3b, R4a and R4b is each independently a hydrogen atom, halogen, or hydroxy etc.; n and m are each independently an integer of 0 to 3; n+m is an integer of 0 to 3; R5 is a hydrogen atom or substituted lower alkyl; or its pharmaceutically acceptable salt thereof.
US08546375B2	(3-(4-(aminomethyl)phenoxy or phenylthio)azetidin-1-yl)(5-phenyl-1,3,4-oxadiazol-2-yl)methanone compounds Disclosed herein are azetidinyl compounds of formula I, as described herein, pharmaceutical compositions comprising an azetidinyl compound, and a method of using an azetidinyl compound in the treatment or prophylaxis of a melanin-concentrating hormone related disease or condition.
US08546374B2	Amino-tetrazoles analogues and methods of use A compound having Formula (I) or Formula (II) is disclosed as an P2X7 antagonist, wherein A, B, C, Y, Y, Z, m, v, R1, R2, R3, R4, and R5, are as defined in the description. Methods and compositions for treating disease or condition modulated by P2X7 are also disclosed.
US08546372B2	Methods of treating hypertriglyceridemia In various embodiments, the present invention provides methods of treating and/or preventing cardiovascular-related disease and, in particular, a method of blood lipid therapy comprising administering to a subject in need thereof a pharmaceutical composition comprising eicosapentaenoic acid or a derivative thereof.
US08546371B2	Nanoparticle formulated glycolipid antigens for immunotherapy A composition for stimulating NKT cells to produce anti-cancer and anti-viral cytokines without causing anergy of NKT cells includes a glycolipid antigen and a nanoparticle conjugated with the glycolipid antigen. The glycolipid antigen and the nanoparticle are not antigenic in mouse and human being. The composition can further include covalent or non-covalent connection between the glycolipid antigen and the nanoparticle. The glycolipid antigen is alpha-galactosylceramide or an analog of that. The nanoparticle can be a polymer. A production method of the composition includes preparing a nanoparticle and a glycolipid antigen and loading the glycolipid antigen to the nanoparticle. The glycolipid antigen can be coated onto the surface of the nanoparticle or encapsulated within the nanoparticle. A method of stimulating NKT cells to produce anti-cancer and anti-viral cytokines without causing anergy of NKT cells is also provided.
US08546370B2	Compounds and compositions as kinase inhibitors The invention provides a novel class of 2,7-naphthyridin derivatives; pharmaceutical compositions comprising such compounds and methods of using such compounds to treat or prevent diseases or disorders associated with abnormal or deregulated kinase activity, particularly Syk, ZAP70, KDR, FMS, FLT3, c-Kit, RET, TrkA, TrkB, TrkC-GR-1R, Alk, c-FMS, or combinations thereof.
US08546366B2	Method for inhibition of tumor cell growth using (22R)-5α-lanosta-8,24-dien-3β,15α,21-triol In this patent, we isolated a novel compound from fruiting body of Antrodia cinnamomea, namely, (22R)-5α-lanosta-8,24-dien-3β,15α,21-triol. This compound possesses preferential cytotoxicity against human leukemia, pancreatic cancer, esophageal cancer, hepatoma, and cervical cancer cells.
US08546365B2	Bile acid derivatives as FXR ligands for the prevention or treatment of FXR-mediated diseases or conditions The present invention relates to compounds of formula (I): wherein R is hydrogen or alpha-hydroxy, the hydroxyl group in position 7 is in the alpha or beta position; and pharmaceutically acceptable salts, solvates or amino acid conjugates thereof.
US08546358B2	Method of treating asthma The present invention is directed to a method for treating or ameliorating asthma in a subject in need thereof comprising administering to the subject a therapeutically effective amount of compound 17:
US08546355B2	Compositions comprising cyclodextrin A stable composition for removing unwanted molecules from a surface comprises functionally-available cyclodextrin, cyclodextrin-compatible surfactant, and cyclodextrin-incompatible surfactant. The compositions are suitable for capturing unwanted molecules from inanimate surfaces, including fabrics, including carpets, and hard surfaces including countertops, dishes, floors, garbage cans, ceilings, walls, carpet padding, air filters, and the like, and from animate surfaces, including skin, hair, and the like. The compositions can further comprise other cyclodextrin-compatible and -incompatible materials and other optional ingredients.
US08546349B2	siRNA targeting VEGFA and methods for treatment in vivo Vascular endothelial growth factor A (VEGFA) is a chemical signal produced by cells that stimulates the growth of new blood vessels, and overexpression of VEGFA can lead to undesirable physiological conditions. Through the identification of new siRNA and modifications that improve the silencing ability of these siRNA in vivo, therapeutic compositions and methods have been invented to address the problems associated with this overexpression.
US08546348B2	Upregulation of opioid receptors for management Disclosed are methods for treating pain in a subject. The method includes upregulating expression of opioid receptors in the subject's dorsal root ganglion or trigeminal neurons. Also disclosed are methods of treating neuropathic and/or chronic pain in a subject. The method includes upregulating expression of μ-opioid or δ-opioid receptors in the subject's dorsal root ganglion or trigeminal neurons.
US08546347B2	Composition for treatment and improvement of diabetes comprising caveolin as active ingredient and a method for treatment of diabetes using it The present invention relates to a composition for the treatment and improvement of diabetes comprising caveolin as an active ingredient and a method for treating diabetes using the same, more precisely a composition comprising caveolin-1 as an active ingredient for the treatment and improvement of type II diabetes which is age-dependent but not showing obesity symptom and a method for treating diabetes using the same. The treatment method and composition of the present invention is very effective in improving and treating diabetes by regulating insulin sensitivity by increasing caveolin level in muscle tissues of type II diabetes patient which is age-dependent but not showing obesity symptom.
US08546343B2	Aminoglycoside antibiotics targeting bacterial 16S ribosomal RNA The present invention relates to paromamine-based compounds according to formula I having selective antimicrobial activity directed at ribosomal 16S RNA. Furthermore, the invention is directed to the use of said compounds for preparing a medicament, pharmaceutical preparations and methods for preparing said compounds.
US08546337B2	Self-assembling peptide nanoparticles useful as vaccines Self-assembling peptide nanoparticles (SAPN) incorporating T-cell epitopes and/or B-cell epitopes are described. The nanoparticles of the invention consist of aggregates of a continuous peptidic chain comprising two oligomerization domains connected by a linker segment wherein one or both oligomerization domains incorporate T-cell epitopes and/or B-cell epitopes within their peptide sequence. These nanoparticles are useful as vaccines and adjuvants.
US08546335B2	Peptidic hydrolyzate proteasome activators and compositions containing same The present invention concerns a peptidic hydrolyzate enriched in bioactive peptides, said hydrolyzate being a proteasome activator. Further, the present invention concerns a cosmetic or pharmaceutical composition comprising said hydrolyzate in a physiologically acceptable medium and also its use in treating signs of aging or photo-aging in skin and protecting the skin against challenges by ultraviolet radiation. Finally, the invention concerns a cosmetic treatment method intended to treat the signs of skin aging and photo-aging.
US08546332B2	Factor VIII polypeptide having factor VIII:C activity Factor VIII polypeptides having FVIII:C activity that contain modifications in the A3 and/or C1 and/or C2 domains of the sequence of the light chain of Factor VIII, characterized by the binding affinity to low density lipoprotein receptor protein, and methods for producing the same.
US08546331B2	Modulation of pathogenic CD14+/CD16+ monocytes The invention is based on the discovery that interleukin-1 alpha (IL-1alpha) is expressed on the proinflammatory CD14+CD16+ monocyte subset. Importantly, since IL-1alpha appears to be almost exclusively expressed on this monocyte subset and not other leukocytes, it represents an ideal marker for targeting the CD14+CD16+ monocyte subset. The effectiveness of an agent that depletes such pathogenic cells or modulates IL-1alpha function on such cells type can be monitored by assessing CD14+CD16+ monocyte levels or functionality.
US08546328B2	Liquid formulation of G-CSF conjugate The present invention relates to a liquid pharmaceutical composition comprising a granulocyte colony stimulating factor polypeptide conjugated with a polymer, the composition having a pH value in the range of 4.5 to 5.5. The composition further comprises a surfactant and optionally one or more other pharmaceutically acceptable excipients. Further, the composition of the invention is free from tartaric acid or salts thereof and from succinic acid and salts thereof as buffering agents and does not contain amino acids as stabilizer. The composition has a good storage stability and is especially useful for the prophylaxis and treatment of disorders and medical indications where granulocyte colony stimulating factor preparations are considered as useful remedies.
US08546327B2	Glucagon/GLP-1 receptor co-agonists Modified glucagon peptides are disclosed having enhanced potency at the glucagon receptor relative to native glucagon. Further modification of the glucagon peptides by forming intramolecular bridges or the substitution of the terminal carboxylic acid with an amide group produces peptides exhibiting glucagon/GLP-1 receptor co-agonist activity. The solubility and stability of these high potency glucagon analogs can be further improved by modification of the polypeptides by pegylation, acylation, alkylation, substitution of carboxy terminal amino acids, C-terminal truncation, or the addition of a carboxy terminal peptide selected from the group consisting of SEQ ID NO: 26 (GPSSGAPPPS), SEQ ID NO: 27 (KRNRNNIA) and SEQ ID NO: 28 (KRNR).
US08546322B2	Inhibitors of intracellular urokinase plasminogen activator and methods of use thereof The present invention provides compositions comprising amiloride amino acid and peptide conjugates. Efficient methods are also provided for administering the compositions for treating cancer and for delivering an amiloride conjugate into cancer cells in a subject in need thereof.
US08546313B1	Nanotubular titania for decontamination of chemical warfare agents and toxic industrial chemicals The invention relates to methods and products enabling decontamination of chemical warfare agents and/or toxic industrial chemicals. More particularly, the invention pertains to improvements of surface decontamination processes using novel sorbents such as nanotubular titania.
US08546308B2	Triple tag sequences and methods of use thereof The present disclosure relates to novel triple tag sequences that may comprise a 6× histidine tag, a c-myc tag and a V5 tag. The present disclosure also provides polynucleotides, proteins, vectors and host cells that comprise the triple tag sequence of the present disclosure, including libraries of such polynucleotides, proteins, vectors and host cells. The novel triple tag sequences of the present disclosure may be used in phage display vectors and phage libraries and in methods for detection, screening, capture, purification, quantitation, and/or recovery of proteins of interest to which they are linked. Proteins of interest include antibodies such as single chain antibodies, single chain antibodies, and Fab fragments of antibodies or peptides such as non-antibody peptides.
US08546301B2	On-demand printable construct Multi-ply thermally printable constructs include a thermal print medium sandwiched between two opaque substrates that are temporarily bonded together to prevent information that is thermally printed through one of the substrates from being viewed until the substrates are separated. The thermal print medium, opaque substrates, and the means for bonding the substrates can take various forms for achieving particular objectives.
US08546297B2	Method for preparing an epoxidation catalyst A process for the preparation of a catalyst useful for the vapor phase production of ethylene oxide from ethylene and oxygen comprising the steps of providing a catalyst precursor comprising an inert support having a catalytically effective amount of a silver containing compound, a promoting amount of an alkali metal containing compound, and a promoting amount of a transition metal containing compound disposed thereon; and heating the catalyst precursor in a gas atmosphere for a first period of time and a second period of time, wherein for the first period of time the gas atmosphere is an inert gas atmosphere and the temperature range is from about 25° C. to about 600° C., and then in a second period of time the gas atmosphere is an oxygen-containing atmosphere and the second period temperature range is from about 350° C. to about 600° C.
US08546289B2	Solid catalyst component for olefin polymerization, catalyst for olefin polymerization and process for producing olefin polymer A solid catalyst component for olefin polymerization in which the molar ratio of residual alkoxy groups to supported titanium is 0.60 or less is obtained by reacting the following compound (a1) with the following compound (b1) at a hydroxyl group/magnesium molar ratio of 1.0 or more, reacting the reaction mixture with the following compound (c1) at a halogen/magnesium molar ratio of 0.20 or more, reacting the resultant reaction mixture with the following compounds (d1) and (e) at a temperature of 120° C. or higher but 150° C. or lower, washing the reaction mixture with an inert solvent, reacting the reaction mixture with the following compound (e) again at the above temperature and washing the reaction mixture with an inert solvent, whereby there can be provided the solid catalyst component for olefin polymerization and a catalyst for olefin polymerization which have high polymerization activity and give an olefin polymer having a less residual Cl content and being excellent in stereoregularity and powder form and a process for producing an olefin polymer, (a1) an oxide of at least one element that is selected from Group II to Group IV elements and which supports an alcohol-free halogen-containing magnesium compound, (b1) an alcohol, (c1) a halogen-containing silicon compound, (d1) an electron-donating compound, and (e) a halogen-containing titanium compound.
US08546286B2	Preparation of hydrogenation and dehydrogenation catalysts In a process for producing a metal containing catalyst composition suitable for effecting hydrocarbon hydrogenation and/or dehydrogenation reactions, a catalyst support comprising a porous crystalline material combined with an amorphous binder is treated with an anchoring material capable of bonding to the surface of the support and to a metal component. In addition, a precursor to the metal component is deposited on the surface of the catalyst support and then the treated catalyst support having the precursor deposited thereon is subjected to conditions effective to convert the precursor to the metal component and to cause the anchoring material to bond to the surface of the support and to the metal component.
US08546285B2	Nanostructured composite material of stabilized zirconia with cerium oxide and doped alumina with zirconia, use, and procedure for obtaining same The present invention provides a nanostructured composite material of γ-alumina-doped zirconia stabilised with cerium oxide and zirconia-doped α-alumina, the process for obtaining it and the applications thereof, such as knee prostheses, hip prostheses, dental implants, mechanical components for pumps, alkaline batteries, ceramic components for stereotactic neurology, cutting tools, etc.
US08546275B2	Atomic layer deposition of hafnium and zirconium oxides for memory applications Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack having a metal oxide buffer layer disposed on or over a metal oxide bulk layer. The metal oxide bulk layer contains a metal-rich oxide material and the metal oxide buffer layer contains a metal-poor oxide material. The metal oxide bulk layer is less electrically resistive than the metal oxide buffer layer since the metal oxide bulk layer is less oxidized or more metallic than the metal oxide buffer layer. In one example, the metal oxide bulk layer contains a metal-rich hafnium oxide material and the metal oxide buffer layer contains a metal-poor zirconium oxide material.
US08546274B2	Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material A highly stressed dielectric material, such as a tensile stressed material, may be deposited in a conformal manner so as to respect any deposition constraints caused by pronounced surface topography of highly scaled semiconductor devices, followed by the deposition of a buffer material having enhanced gap-filling capabilities. Thereafter, a further stress-inducing layer is deposited to form a doublet structure, which acts on the transistor elements, thereby enhancing overall performance, without increasing the probability of creating deposition-related irregularities. Hence, production yield as well as performance of highly scaled semiconductor devices may be increased.
US08546270B2	Atomic layer deposition apparatus An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.
US08546266B2	Plasma processing method and plasma processing apparatus The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.
US08546265B2	Method, apparatus and program for manufacturing silicon structure A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.
US08546263B2	Method of patterning of magnetic tunnel junctions Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.
US08546260B2	Fabric containing non-crimped fibers and methods of manufacture A chemical-mechanical planarization pad for semiconductor manufacturing is provided. The pad comprises synthetic fibers that are non-crimped fibers which are present in an amount of 1.0% by weight to 98.0% by weight in the mat and wherein the non-crimped fibers have a length of 0.1 cm to 127 cm and a diameter of 1.0 to 1000 micrometers.
US08546259B2	Nickel silicide formation for semiconductor components Semiconductor components are often fabricated that include a nickel silicide layer, e.g., as part of a gate electrode in a transistor component, which may be formed by forming a layer of nickel on a silicon-containing area of the semiconductor substrate, followed by thermally annealing the semiconductor substrate to produce a nickel silicide. However, nickel may tend to diffuse into silicon during the thermal anneal, and may form crystals that undesirably increase the sheet resistance in the transistor. Carbon may be placed with the nickel to serve as a diffusion suppressant and/or to prevent nickel crystal formation during thermal annealing. Methods are disclosed for utilizing this technique, as well as semiconductor components formed in accordance with this technique.
US08546258B2	Method of fabricating metal contact using double patterning technology and device formed thereby Metal contacts are formed within a string overhead area using a double patterning technology (DPT) process thereby allowing for the reduction of a string overhead area and a concomitant reduction in the chip size of a semiconductor device. A first mask pattern is formed by etching a first mask layer, the first mask pattern including a first opening formed in a cell region and a first hole formed in a peripheral region. A first sacrificial pattern is formed on the first mask pattern and the exposed first insulating layer of the cell region using a double patterning technology process. Contact holes are formed by exposing the target layer by etching the first insulating layer using the first mask pattern and the first sacrificial pattern as an etch mask. Metal contacts are then formed in the contact holes.
US08546257B2	Electrode arrays and methods of fabricating the same using printing plates to arrange particles in an array Electrode arrays and methods of fabricating the same using a printing plate to arrange conductive particles in alignment with an array of electrodes are provided. In one embodiment, a semiconductor device comprises: a semiconductor topography comprising an array of electrodes disposed upon a semiconductor substrate; a dielectric layer residing upon the semiconductor topography; and at least one conductive particle disposed in or on the dielectric layer in alignment with at least one of the array of electrodes.
US08546256B2	Method of forming semiconductor device The methods include forming a semiconductor substrate pattern by etching a semiconductor substrate. The semiconductor pattern has a first via hole that exposes side walls of the semiconductor substrate pattern, and the side walls of the semiconductor substrate pattern exposed by the first via hole have an impurity layer pattern. The methods further include treating upper surfaces of the semiconductor substrate pattern, the treated upper surfaces of the semiconductor substrate pattern being hydrophobic; removing the impurity layer pattern from the side walls of the semiconductor substrate pattern exposed by the first via hole; forming a first insulating layer pattern on the side walls of the semiconductor substrate pattern exposed by the first via hole; and filling a first conductive layer pattern into the first via hole and over the first insulating layer pattern.
US08546252B2	Metal gate FET having reduced threshold voltage roll-off A structure and method to create a metal gate having reduced threshold voltage roll-off. A method includes: forming a gate dielectric material on a substrate; forming a gate electrode material on the gate dielectric material; and altering a first portion of the gate electrode material. The altering causes the first portion of the gate electrode material to have a first work function that is different than a second work function associated with a second portion of the gate electrode material.
US08546248B2	Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
US08546246B2	Radiation hardened transistors based on graphene and carbon nanotubes Graphene- and/or carbon nanotube-based radiation-hard transistor devices and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating a radiation-hard transistor is provided. The method includes the following steps. A radiation-hard substrate is provided. A carbon-based material is formed on the substrate wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor. Contacts are formed to the portions of the carbon-based material that serve as the source and drain regions of the transistor. A gate dielectric is deposited over the portion of the carbon-based material that serves as the channel region of the transistor. A top-gate contact is formed on the gate dielectric.
US08546244B2	Method of manufacturing semiconductor device A method includes the steps of: (a) fixing a front surface of a wafer (semiconductor wafer) having the front surface, a plurality of chip regions formed on the front surface, a dicing region formed between the chip regions, and a rear surface opposite to the front surface to the supporting member; (b) in a state of having the wafer fixed to the supporting member, grinding the rear surface of the wafer to expose the rear surface; (c) in a state of having the wafer fixed to the supporting member, dividing the wafer into the chip regions; (d) etching side surfaces of the chip regions to remove crushed layers formed in the step (c) on the side surfaces and obtain a plurality of semiconductor chips. After the steps (e) and (d), the plurality of divided chip regions are peeled off from the supporting member to obtain a plurality of semiconductor chips.
US08546243B2	Dual contact trench resistor and capacitor in shallow trench isolation (STI) and methods of manufacture A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.
US08546242B2	Hybrid gap-fill approach for STI formation A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a conformal deposition method to fill a dielectric material into the opening; performing a first treatment on the dielectric material, wherein the first treatment provides an energy high enough for breaking bonds in the dielectric material; and performing a steam anneal on the dielectric material.
US08546241B2	Semiconductor device with stress trench isolation and method for forming the same A semiconductor device with stress trench isolation and a method for forming the same are provided. The method includes: providing a silicon substrate; forming first trenches and second trenches on the silicon substrate, wherein an extension direction of the first trenches is perpendicular to that of the second trenches; forming a first dielectric layer in the first trenches and forming a second dielectric layer in the second trenches; and forming a gate stack on a portion of the silicon substrate surrounded by the first trenches and the second trenches, wherein a channel length direction under the gate stack is parallel to the extension direction of the first trenches, indices of crystal plane of the silicon substrate are {100}, and the extension direction of the first trenches is along the crystal orientation <110>. The embodiments of the present invention can improve response speed and performance of the devices.
US08546240B2	Methods of manufacturing integrated semiconductor devices with single crystalline beam Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes providing further sacrificial material in a trench of a lower wafer. The method further includes bonding the lower wafer to the insulator, under the single crystalline beam. The method further includes venting the sacrificial material and the further sacrificial material to form an upper cavity above the single crystalline beam and a lower cavity, below the single crystalline beam.
US08546238B2	Method for transferring at least one micro-technological layer A method for transferring a micro-technological layer includes preparing a substrate having a porous layer buried beneath a useful surface, forming an embrittled zone between it and the surface, bonding the substrate to a supporting substrate, causing detachment at the porous layer by mechanical stress to obtain a first substrate remnant, and a bare surfaced detached layer joined to the supporting substrate, performing technological steps on the bared surface of the detached layer, bonding the detached layer, by the surface to which the technological steps had been applied, to a second supporting substrate, causing detachment, at the embrittled zone, by heat treatment to obtain a detached layer remnant joined to the second supporting substrate, and the detached layer remnant joined to the first supporting substrate.
US08546231B2	Memory arrays and methods of forming memory cells Some embodiments include methods of forming memory cells. A stack includes ovonic material over an electrically conductive region. The stack is patterned into rails that extend along a first direction. The rails are patterned into pillars. Electrically conductive lines are formed over the ovonic material. The electrically conductive lines extend along a second direction that intersects the first direction. The electrically conductive lines interconnect the pillars along the second direction. Some embodiments include a memory array having first electrically conductive lines extending along a first direction. The lines contain n-type doped regions of semiconductor material. Pillars are over the first conductive lines and contain mesas of the n-type doped regions together with p-type doped regions and ovonic material. Second electrically conductive lines are over the ovonic material and extend along a second direction that intersects the first direction. The second electrically conductive lines interconnect the pillars along the second direction.
US08546229B2	Methods for fabricating bipolar transistors with improved gain Insufficient gain in bipolar transistors (20) is improved by providing an alloyed (e.g., silicided) emitter contact (452) smaller than the overall emitter (42) area. The improved emitter (42) has a first emitter (FE) portion (42-1) of a first dopant concentration CFE, and a second emitter (SE) portion (42-2) of a second dopant concentration CSE. Preferably CSE≧CFE. The SE portion (42-2) desirably comprises multiple sub-regions (45i, 45j, 45k) mixed with multiple sub-regions (47m, 47n, 47p) of the FE portion (42-1). A semiconductor-metal alloy or compound (e.g., a silicide) is desirably used for Ohmic contact (452) to the SE portion (42-2) but substantially not to the FE portion (42-1). Including the FE portion (42-1) electrically coupled to the SE portion (42-2) but not substantially contacting the emitter contact (452) on the SE portion (42-2) provides gain increases of as much as ˜278.
US08546225B2	Method for manufacturing semiconductor device An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of forming a first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating film; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film; performing oxygen doping treatment on the second insulating film to supply an oxygen atom to the second insulating film; and forming a gate electrode in a region overlapping with the oxide semiconductor film, over the second insulating film.
US08546224B2	Method for manufacturing twin bit structure cell with aluminum oxide layer A method for manufacturing a twin bit cell structure with an aluminum oxide material includes forming a gate dielectric layer overlying a semiconductor substrate and a polysilicon gate structure overlying the gate dielectric layer. An undercut region is formed in each side of the gate dielectric layer underneath the polysilicon gate structure. Thereafter, an oxidation process is performed to form a first silicon oxide layer on a peripheral surface of the polysilicon gate structure and a second silicon oxide layer on an exposed surface of the semiconductor substrate. Then, an aluminum oxide material is deposited over the first and second silicon oxide layers including the undercut region and the gate dielectric layer. The aluminum oxide material is selectively etched to form an insert region in a portion of the undercut region. A sidewall spacer is formed to isolate and protect the exposed aluminum oxide material and the polysilicon gate structure.
US08546223B2	Semiconductor device and manufacturing method of the same The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.
US08546222B1	Electrically erasable programmable non-volatile memory In an embodiment of the invention, a method of fabricating a floating-gate PMOSFET (p-type metal-oxide semiconductor field-effect transistor) is disclosed. A silicide blocking layer (e.g. oxide, nitride) is used not only to block areas from being silicided but to also form an insulator on top of a poly-silicon gate. The insulator along with a top electrode (control gate) forms a capacitor on top of the poly-silicon gate. The poly-silicon gate also serves at the bottom electrode of the capacitor. The capacitor can then be used to capacitively couple charge to the poly-silicon gate. Because the poly-silicon gate is surrounded by insulating material, the charge coupled to the poly-silicon gate may be stored for a long period of time after a programming operation.
US08546221B2	Voltage converter and systems including same A voltage converter includes an output circuit having a high side device and a low side device which can be formed on a single die (i.e. a “PowerDie”) and connected to each other through a semiconductor substrate. Both the high side device and the low side device can include lateral diffused metal oxide semiconductor (LDMOS) transistors. Because both output transistors include the same type of transistors, the two devices can be formed simultaneously, thereby reducing the number of photomasks over other voltage converter designs. The voltage converter can further include a controller circuit on a different die which can be electrically coupled to, and co-packaged with, the PowerDie.
US08546218B2	Method for fabricating semiconductor device with buried word line A method for fabricating a semiconductor device includes etching a substrate to form a plurality of bodies isolated by a first trench, forming a buried bit line gap-filling a portion of the first trench, etching the top portions of the bodies to form a plurality of pillars isolated by a plurality of second trenches extending across the first trench, forming a passivation layer gap-filling a portion of the second trenches, forming an isolation layer that divides each of the second trenches into isolation trenches over the passivation layer, and filling a portion of the isolation trenches to form a buried word line extending in a direction crossing over the buried bit line.
US08546217B2	Flash memory and method for forming the same A flash memory cell is provided. The flash memory cell includes: a substrate with a source line thereon; a word line and a word line dielectric layer on each side of the source line; an isolating dielectric layer which isolates the source line from the word line and the word line dielectric layer on each side of the source line; a gate stack on an outer side of each word line dielectric layer, including a floating gate dielectric layer, a floating gate, a control gate dielectric layer and a control gate; a first spacer, disposed on an outer sidewall of each word line dielectric layer and on each control gate; and a source region in the substrate and in contact with the source line. The space may be saved and the costs may be reduced.
US08546216B2	Nonvolatile semiconductor memory device and method of fabricating the same A nonvolatile semiconductor memory device includes a first insulating layer, charge storage layers, element isolation insulating films, and a second insulating layer formed on the charge storage layers and the element isolation insulating films and including a stacked structure of a first silicon nitride film, first silicon oxide film, intermediate insulating film and second silicon oxide film. The first silicon nitride film has a nitrogen concentration of not less than 21×1015 atoms/cm2. Each element isolation insulating film includes a high-temperature oxide film formed along lower side surfaces of the charge storage layers between the charge storage layers and a coating type insulating film. The first silicon nitride film is formed on an upper surface of the high-temperature oxide film in upper surfaces of the element isolation insulating films and not on the upper surface of the coating type insulating film.
US08546213B2	Method of manufacturing semiconductor device having high voltage ESD protective diode A high voltage ESD protective diode having high avalanche withstand capability and capable of being formed by using manufacturing steps identical with those for a high voltage transistor to be protected, the device having a structure in which a gate oxide film is formed over a substrate surface at a PN junction formed of an N type low concentration semiconductor substrate constituting a cathode region and a P type low concentration diffusion region constituting an anode region, and a gate electrode which is disposed overriding the gate oxide film and a field oxide film is connected electrically by way of a gate plug with an anode electrode, whereby an electric field at the PN junction is moderated upon avalanche breakdown to obtain a high avalanche withstand capability. Further, the withstand voltage can be adjusted by changing the length of the field oxide film.
US08546211B2	Replacement gate having work function at valence band edge Replacement gate stacks are provided, which increase the work function of the gate electrode of a p-type field effect transistor (PFET). In one embodiment, the work function metal stack includes a titanium-oxide-nitride layer located between a lower titanium nitride layer and an upper titanium nitride layer. The stack of the lower titanium nitride layer, the titanium-oxide-nitride layer, and the upper titanium nitride layer produces the unexpected result of increasing the work function of the work function metal stack significantly. In another embodiment, the work function metal stack includes an aluminum layer deposited at a temperature not greater than 420° C. The aluminum layer deposited at a temperature not greater than 420° C. produces the unexpected result of increasing the work function of the work function metal stack significantly.
US08546207B2	Method for fabricating semiconductor wafers for the integration of silicon components with HEMTs, and appropriate semiconductor layer arrangement The invention describes a method for fabricating silicon semiconductor wafers with the layer structures from III-V semiconductor layers for the integration of HEMTs based on semiconductor III-V layers with silicon components. SOI silicon semiconductor wafers are used, the active semiconductor layer of which has the III-V semiconductor layers (24) of the HEMT design (2) placed on it stretching over two mutually insulated regions (24a, 24b) of the active silicon layer. An appropriate layer arrangement is likewise disclosed.
US08546206B2	Enhancement mode III-nitride FET A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.
US08546205B2	Detecting a deposition condition Apparatus and methods for detecting evaporation conditions in an evaporator for evaporating metal onto semiconductor wafers, such as GaAs wafers, are disclosed. One such apparatus can include a crystal monitor sensor configured to detect metal vapor associated with a metal source prior to metal deposition onto a semiconductor wafer. This apparatus can also include a shutter configured to remain in a closed position when the crystal monitor sensor detects an undesired condition, so as to prevent metal deposition onto the semiconductor wafer. In some implementations, the undesired condition can be indicative of a composition of a metal source, a deposition rate of a metal source, impurities of a metal source, position of a metal source, position of an electron beam, and/or intensity of an electron beam.
US08546204B2	Method for growing conformal epi layers and structure thereof A method for forming a conformal buffer layer of uniform thickness and a resulting semiconductor structure are disclosed. The conformal buffer layer is used to protect highly-doped extension regions during formation of an epitaxial layer that is used for inducing mechanical stress on the channel region of transistors.
US08546198B2	Method of manufacturing transparent transistor with multi-layered structures A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.
US08546196B2	Non-volatile memory device and manufacturing method thereof According to one embodiment, a non-volatile memory device is formed as described below. First, a wiring material layer, which configures a part of a wiring of an element, is stacked above an element layer, the wiring material layer is processed in a predetermined shape, and the element layer is etched using the wiring material layer as a mask. Next, an insulation layer is embedded between etched patterns, and the insulation layer is removed using the wiring material layer as a stopper. Then, a wiring layer, which is in contact with the wiring material layer, is formed on the insulation layer from which the wiring material layer is exposed.
US08546192B2	System for clamping heat sink A system for clamping a heat sink that prevents excessive clamping force is provided. The system may include a heat sink, a semiconductor device, a printed circuit board, and a cover. The semiconductor device may be mounted onto the circuit board and attached to the cover. The heat sink may be designed to interface with the semiconductor device to transfer heat away from the semiconductor device and dissipate the heat into the environment. Accordingly, the heat sink may be clamped into a tight mechanical connection with the semiconductor device to minimize thermal resistance between the semiconductor device and the heat sink. To prevent excessive clamping force from damaging the semiconductor device, loading columns may extend between the cover and the heat sink.
US08546189B2	Semiconductor device and method of forming a wafer level package with top and bottom solder bump interconnection A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps.
US08546188B2	Bow-balanced 3D chip stacking A first set of semiconductor substrates includes semiconductor chips having bonding pads arranged in a primary pattern. A second set of semiconductor substrates includes semiconductor chips having bonding pads arranged in a mirror-image pattern. A first semiconductor substrate from the first set is bonded to a second semiconductor substrate from the second set such that each bonding pads is bonded to a mirror-image bonding pad. Additional substrates are bonded sequentially such that the bonded structure includes an even number of semiconductor substrates of which one half have bonding pads of the primary pattern and are bonded to the side of the first semiconductor substrate, while the other half have bonding pads of the mirror-image pattern and are bonded to the side of the second semiconductor substrate. The mirror-image patterns of the bonding pads enable maximal cancellation of wafer bow.
US08546187B2	Electronic part and method of manufacturing the same A method of manufacturing a multi-chip module includes: securing a plurality of chips on a surface of a flat-shaped member through a solder bump; connecting the plurality of chips with each other by a bonding wire, at surfaces, opposite to the flat-shaped member side, of the plurality of chips; and electrically connecting the plurality of chips with a board, at the surfaces, opposite to the flat-shaped member side, of the plurality of chips.
US08546183B2	Method for fabricating heat dissipating semiconductor package A heat dissipating semiconductor package and a fabrication method thereof are provided. A semiconductor chip is mounted on a chip carrier. A heat sink is mounted on the chip, and includes an insulating core layer, a thin metallic layer formed on each of an upper surface and a lower surface of the insulating core layer and a thermal via hole formed in the insulating core layer. A molding process is performed to encapsulate the chip and the heat sink with an encapsulant to form a package unit. A singulation process is performed to peripherally cut the package unit. A part of the encapsulant above the thin metallic layer on the upper surface of the heat sink is removed, such that the thin metallic layer on the upper surface of the heat sink is exposed, and heat generated by the chip can be dissipated through the heat sink.
US08546182B2	Semiconductor device and method for manufacturing the same An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
US08546179B2	Method of fabricating a self-aligned top-gate organic transistor A method of fabricating a self-aligned top-gate organic transistor comprises depositing a photoresist material over the dielectric material, and exposing the photoresist material to irradiation through the substrate using the source and drain electrodes as a mask. The exposure defines a region for deposition of the gate electrode.
US08546174B2	Method for manufacturing semiconductor device In a method for manufacturing a semiconductor device according to an embodiment, an epitaxial semiconductor layer is epitaxially grown on a semiconductor substrate, a photoelectric converting portion is formed on the epitaxial semiconductor layer, a wiring layer is formed on the epitaxial semiconductor layer after forming the photoelectric converting portion, a support substrate is bonded onto the wiring layer, and the semiconductor substrate is etched from an opposite surface side to a side for the bonding after the bonding. In the method for manufacturing a semiconductor device, an amorphous Si layer is formed on the opposite surface side of the epitaxial semiconductor layer after the etching and an antireflection film and a color filter are formed on the amorphous Si layer in sequence.
US08546173B2	Photoelectric conversion device and fabrication method therefor A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.
US08546169B1	Pressure sensor device and method of assembling same A pressure sensor device is assembled by forming cavities on a surface of a metal sheet and then forming an electrically conductive pattern having traces and bumps over the cavities. An insulating layer is formed on top of the pattern and then processed to form exposed areas and die attach areas on the surface of the metal sheet. The exposed areas are plated with a conductive metal and then electrically connected to respective ones of the bumps. A gel is dispensed on the die attach areas and sensor dies are attached to respective die attach areas. One or more additional semiconductor dies are attached to the insulating layer and bond pads of these dies are electrically connected to the exposed plated areas. A molding compound is dispensed such that it covers the sensor die and the additional dies. The metal sheet is removed to expose outer surfaces of the bumps.
US08546167B2	Gallium nitride-based compound semiconductor light-emitting element A nitride-based semiconductor light-emitting element includes an n-GaN layer 102, a p-GaN layer 107, and a GaN/InGaN multi-quantum well active layer 105, which is interposed between the n- and p-GaN layers 102 and 107. The GaN/InGaN multi-quantum well active layer 105 is an m-plane semiconductor layer, which includes an InxGa1-xN (where 0
US08546164B2	Method of manufacturing display device including thin film transistor A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.
US08546163B2	Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
US08546160B2	Method for packaging light emitting diodes A method for packaging LEDs includes steps of: forming a substrate with a rectangular frame, a plurality of first and second electrode strips received within the frame and alternately arranged along a width direction of the frame; forming a carrier layer on each pair of the first and second electrode strips, the carrier layer defining a plurality of recesses; arranging an LED die in each recess and electrically connecting the LED die with first and second electrodes; forming an encapsulation in each recess to cover the LED die; and cutting the first and second electrode strips along the width direction of the frame to obtain a plurality of separated LED packages each including the first and second electrodes, the LED die, the encapsulation and a part of the carrier layer.
US08546158B2	Method for distributing phosphor particulates on LED chip A method for distributing phosphor particulates on an LED chip, includes steps of: providing a substrate having an LED chip mounted thereon; dispensing an adhesive on the chip, wherein the adhesive have positively charged phosphor particulates doped therein; providing an upper mold and a lower mold for producing an electric field through the adhesive and moving the upper mold to press the adhesive, wherein the phosphor particulates are driven by the electric field to move to a top face of the chip; and curing the adhesive and removing the upper mold and the lower mold.
US08546155B2	Via chains for defect localization Method form via chain and serpentine/comb test structures in kerf areas of a wafer. The via chain test structures comprise a first via chain and a second via chain in a first kerf area. The via chain test structures are formed such that geometrically shaped portions of the first via chain and geometrically shaped portions of the second via chain alternate along the length of the first kerf area. The methods perform relatively low (first) magnification testing to identify a defective geometrically shaped portion that contains a defective via structure. The methods then perform relatively high (second) magnification testing only within the defective geometrically shaped portion. The first magnification testing is performed at a lower magnification relative to the second magnification testing.
US08546150B2	Ultra-sensitive chemiluminescent substrates for enzymes and their conjugates New chemiluminescent compounds, stable in aqueous buffers, for use in biological assaying include acridane-based compounds and 1,2-dioxetanes. Among the new acridane-based compounds are water-soluble acridanes, enhancer coupled acridanes, bis and tris-acridanes as well as acridane-1,2-dioxetanes. Among the new 1,2-dioxetanes are electron deficient group-containing dioxetanes and tethered bis-1,2-dioxetanes. The 1,2-dioxetanes are useful as substrates for various enzymes. The acridanes can be admixed with an oxidizing agent an aqueous buffer and, optionally, a stabilizer to form a substrate or reagent formulation useful for assaying, inter alia, HRP.
US08546149B2	Potency test for vaccine formulations The invention relates to certain methods for the determination of an antigen content of a first antigen in a mixture comprising two or more antigens. The invention also relates to a potency test for an antigen in a combination vaccine. The method allows the determination of the antigen content in a mixture additionally comprising antibodies that are capable of binding with the antigen.
US08546142B2	Reverse flow perfusion of three-dimensional scaffolds The invention is a reverse-flow method and system for the loading, proliferation and differentiation of cells into and throughout an implantable biocompatible three-dimensional scaffold.
US08546141B2	Method for preparation of platelet from iPS cell A method for efficiently preparing blood cells, such as mature megakaryocytes and platelets, from iPS cells is achieved in an in vitro culture system. A sac-like structure encloses hematopoietic progenitor cells, which is obtained by inoculating iPS cells onto feeder cells and then culturing the iPS cells under conditions suitable for inducing the differentiation of hematopoietic progenitor cells. Moreover, a method for producing various types of blood cells, comprises culturing hematopoietic progenitor cells enclosed in the sac-like structure under conditions suitable for inducing the differentiation of blood cells. Furthermore, a method for producing various types of blood cells, particularly megakaryocytes and platelets, is achieved without involving the sac-like structure.
US08546139B2	Protocols for making hepatocytes from embryonic stem cells This disclosure provides a newly developed strategy and particular options for differentiating pluripotent stem cells into cells of the hepatocyte lineage. Many of the protocols are based on a strategy in which the cells are first differentiated into early germ layer cells, then into hepatocyte precursors, and then into mature cells. The cells obtained have morphological features and phenotypic markers characteristic of human adult hepatocytes. They also show evidence of cytochrome p450 enzyme activity, validating their utility for commercial applications such as drug screening, or use in the manufacture of medicaments and medical devices for clinical therapy.
US08546132B1	Testing probe for testing and validation of biological kill rates in regulated medical waste autoclaves An apparatus for safely and conveniently placing and retrieving biological indicators and/or computerized data tracers from deep within loads of Regulated Medical/Infectious Waste comprises a rod with a cavity for holding the biological indicators and/or computerized data tracers. Preferably, the rod is tapered to a point on one end, has a handle on the opposite end, and has a cover to enclose the cavity. Additionally, it is preferred that the rod is fitted with a movable sealing ring of soft material for sealing the area where the rod penetrates the waste load.
US08546128B2	Fluidics system for sequential delivery of reagents The invention provides a passive fluidics circuit for directing different fluids to a common volume, such as a reaction chamber or flow cell, without intermixing or cross contamination. The direction and rate of flow through junctions, nodes and passages of the fluidics circuit are controlled by the states of upstream valves (e.g. opened or closed), differential fluid pressures at circuit inlets or upstream reservoirs, flow path resistances, and the like. Free diffusion or leakage of fluids from unselected inlets into the common outlet or other inlets at junctions or nodes is prevented by the flow of the selected inlet fluid, a portion of which sweeps by the inlets of unselected fluids and exits the fluidics circuit by waste ports, thereby creating a barrier against undesired intermixing with the outlet flow through leakage or diffusion. The invention is particularly advantageous in apparatus for performing sensitive multistep reactions, such as pH-based DNA sequencing reactions.
US08546127B2	Bacteria/RNA extraction device Apparatus and method for collection of a target material from a liquid sample comprising target species that contain the target material. The apparatus comprises a fluid flow conduit in communication with a filter medium having a pore size adapted to retain target species thereon and pass, as filtrate, lysate containing the desired target material. A lysing agent conduit communicates with the fluid flow conduit and delivers lysing agent to the filter medium to lyse the target cells thereby releasing the desired intracellular target material. The lysing agent may be recirculated through the filter medium for a sufficient time to permit sufficient quantity of lysate to circulate through the system for lysate collection and subsequent assay.
US08546126B2	Over expression of foldases and chaperones improves protein production The present teachings provide methods for increasing protein secretion, e.g., chymosin in filamentous fungi by co-expressing certain chaperone(s) and/or foldase(s). The present teachings also provide filamentous fungi containing certain chaperone(s) and/or foldase(s) and a protein of interest for increased secretion.
US08546125B2	Recombinant hosts and methods for manufacturing polyhydroxyalkanoate Known attempts using engineered bacteria to produce P(3HB-co-4HB) with carbon sources that are structurally unrelated to 4-hydroxybutyrate resulted in relatively low 4HB monomer content of 1.5 to 5 mol %. The current invention provides recombinant hosts for producing P(3HB-co-4HB) wherein the plasmid including succinate semialdehyde dehydrogenase gene (sucD gene) and 4-hydroxybutyrate dehydrogenase gene (4hbD gene) further includes pyruvate decarboxylase promoter (Ppdc). It was found that the 4HB monomer content in P(3HB-co-4HB) is significantly enhanced to be over 20 mol %, in the range of 8.8 to 23 mol %.
US08546122B2	Subtilases The present invention relates to methods for producing variants of a parent TY145 subtilase and of a parent BPN′ subtilase and to TY145 and BPN′ variants having altered properties as compared to the parent TY145/BPN′ subtilase.
US08546121B2	Variants of an alpha-amylase with improved production levels in fermentation processes Variants of Bacillus sp. no. 707 alpha amylase are provided that are produced more efficiently and thus more economically. Higher fermentation yields are achieved through introducing amino acid variations that promote solubility of the variant in a fermentation broth. Increased solubility allows more enzyme to remain in solution after expression in a host cell. This in turn increases the efficiency with which the expressed variant enzyme can be recovered from the fermentation broth.
US08546119B2	Perhydrolase variant providing improved specific activity An acetyl xylan esterase variant having perhydrolytic activity is provided for producing peroxycarboxylic acids from carboxylic acid esters and a source of peroxygen. More specifically, a Thermotoga maritima acetyl xylan esterase gene was modified using error-prone PCR and site-directed mutagenesis to create an enzyme catalyst characterized by an increase in specific activity. The variant acetyl xylan esterase may be used to produce peroxycarboxylic acids suitable for use in a variety of applications such as cleaning, disinfecting, sanitizing, bleaching, wood pulp processing, and paper pulp processing applications.
US08546111B2	Maltotriosyl transferase and use thereof The object is to provide a novel glycosyltransferase and the use thereof, the glycosyltransferase catalyzes transglucosylation of maltotriose units under conditions which can be employed for the processing of foods or the like. Provided is a maltotriosyl transferase which acts on polysaccharides and oligosaccharides having α-1,4 glucoside bonds, and has activity for transferring maltotriose units to saccharides, the maltotriosyl transferase acting on maltotetraose as substrate to give a ratio between the maltoheptaose production rate and maltotriose production rate of 9:1 to 10:0 at any substrate concentration ranging from 0.67 to 70% (w/v).
US08546106B2	Methods of increasing secretion of polypeptides having biological activity The present invention relates to methods for producing a secreted polypeptide having biological activity, comprising: (a) transforming a fungal host cell with a fusion protein construct encoding a fusion protein, which comprises: (i) a first polynucleotide encoding a signal peptide; (ii) a second polynucleotide encoding at least a catalytic domain of an endoglucanase or a portion thereof; and (iii) a third polynucleotide encoding at least a catalytic domain of a polypeptide having biological activity; wherein the signal peptide and at least the catalytic domain of the endoglucanase increases secretion of the polypeptide having biological activity compared to the absence of at least the catalytic domain of the endoglucanase; (b) cultivating the transformed fungal host cell under conditions suitable for production of the fusion protein; and (c) recovering the fusion protein, a component thereof, or a combination thereof, having biological activity, from the cultivation medium.
US08546105B2	Engineering intracellular sialylation pathways Methods for manipulating carbohydrate processing pathways in cells of interest are provided. Methods are directed at manipulating multiple pathways involved with the sialylation reaction by using recombinant DNA technology and substrate feeding approaches to enable the production of sialylated glycoproteins in cells of interest. These carbohydrate engineering efforts encompass the implementation of new carbohydrate bioassays, the examination of a selection of insect cell lines and the use of bioinformatics to identify gene sequences for critical processing enzymes. The compositions comprise cells of interest producing sialylated glycoproteins. The methods and compositions are useful for heterologous expression of glycoproteins.
US08546103B2	Method for detecting the presence or absence of pathogenic Staphylococci in a test sample, including test mixture with micro particles A presence/absence test for Staphylococcus aureus (S. aureus) involves placing a first generation test sample in a solution that will clot in the presence of S. aureus. The solution contains components that will selectively grow S. aureus and also contains clotting factors that will react with S. aureus, if S. aureus is present in the sample, to clot the solution. Examples of specimen samples that can be tested include nasal swabs and lesion swabs, among others. The test can also be modified to detect the presence or absence of methicillin resistant S. Aureus (MRSA). The addition of micro particles having a size in the range of about 0.1 micron to about 1.0 mm provides localities where the bacteria agglomerate, thereby significantly decreasing the clotting time, and providing a significantly stronger clot. The micro particles can be used in other bacteria tests to accelerate the production of an end result. Such other tests can include a vancomycin-resistant enterococcus test; a Group B Streptococcus test; a test for hemolytic E. coli; and a test for Listeria monocytogenes, to name a few. These tests are all performed in a liquid broth-type reagent mixture and do not necessarily involve clotting of the broth.
US08546096B2	Method for identifying a non-anticoagulant sulfated polysaccharide which enhances blood coagulation dependence on FXI A method of identifying a non-anticoagulant sulfated polysaccharide (NASP) which is capable of enhancing blood coagulation in dependence of FXI, the method comprising: a) combining a blood or plasma sample having activation competent FXI with a sulfated polysaccharide and measuring the clotting or thrombin generation parameters of the blood or plasma sample; b) combining a corresponding blood or plasma sample deficient In activation competent FXI with a sulfated polysaccharide and measuring the clotting or thrombin generation parameters of the blood or plasma sample and c) comparing the clotting or thrombin generation parameters of the blood or plasma samples as determined in steps (a) and (b) with each other.
US08546095B2	Methods for determination of calcineurin activity and uses in predicting therapeutic outcomes The methods of the disclosure provide fluorescence-based assays for calcineurin activity, especially in isolated T cells. The methods include the stimulation of the T cells with agents that specifically target the TCR with or without influencing co-stimulatory pathways. One TCR agonist is monoclonal antibodies specific for CD3, which more precisely distinguish the inducible activity of calcineurin than does an alternative method targeting the T cell receptor (CD3) combined with CD28 costimulation. This method more accurately distinguishes between the measured level of calcineurin activity of T cells from immunosuppressed transplant recipients and normal individuals, and thus has improved diagnostic accuracy with respect to the response of an individual to immunosuppressant therapy following an organ transplant.
US08546093B2	Detection method for methicillin resistant staphylococcus aureus The present invention relates to an antibody against a protein specifically expressed in methicillin-resistant strains of Staphylococcus aureus (MRSA), and a method and a kit for detecting MRSA. The present invention enables a fast and accurate detection of MRSA by using both a PBP2a-specific antibody for the detection of PBP2a and a Protein A-specific antibody for the detection of Protein A.
US08546088B2	Porphyrinic compounds for use in flow cytometry The present invention provides a method of detecting (e.g., by flow cytometry) a target compound, cell or particle, wherein the target is labelled with a detectable luminescent compound. The method comprises utilizing as the detectable luminescent compound a compound comprising a porphyrinic macrocycle such as a porphyrin, chlorin, bacteriochlorin, or isobacteriochlorin. In particular embodiments, the detectable luminescent compound comprises a compound of the formula A-A′-Z-B′-B, wherein: A is a targeting group or member of a specific binding pair that specifically binds the detectable luminescent compound to the target compound, cell or particle; A′ is a linker group or covalent bond; B′ is a linker group or covalent bond; B is a water-soluble group; and Z is the porphyrinic macrocycle.
US08546084B2	Device and method for identifying and determining blood groups A device for the determination and/or the detection of erythrocyte blood groups from a whole blood sample, and a process that implements this device, as well as a kit for the determination and the detection of blood groups are disclosed.
US08546077B2	Prostaglandin E2 modulation and uses thereof Methods, uses, kits and products are described for the prognosis, diagnosis, prevention and treatment of myotronic dystrophy type 1 (DM1), and more particularly for the prognosis, diagnosis, prevention and treatment of the congenital form of myotronic dystrophy type 1 (cDM1), based on changes in/modulation of prostaglandin E2 (PGE2).
US08546076B2	Mutational profile in HIV-1 GAG cleavage site correlated with phenotypic drug resistance The invention concerns novel mutations or mutational profiles of HIV-1 protease cleavage sites (CS) in the Gag region correlated with a phenotype causing alterations in sensitivity to anti-HIV drugs. The present invention also relates to the use of genotypic characterization of a target population of HIV and the subsequent association, i.e., correlation, of this information to phenotypic interpretation in order to correlate virus mutational profiles with drug resistance. The invention further relates to methods of utilizing the mutational profiles of the invention in databases, drug development, i.e., drug design, and drug modification, therapy and treatment design and clinical management.
US08546070B1	Color photographic silver halide paper and use A color photographic element has a reflective support and a blue light sensitive color record, a green light sensitive color record, and a red light sensitive color record can be used to provide color photographic prints. The element also has a non-light sensitive interlayer between the green light and red light sensitive color records. This interlayer comprises a hydrophilic colloid and an acrylic latex polymer having a glass transition temperature (Tg) of less than 0° C. The presence of this acrylic latex polymer in the interlayer reduces the formation of a cyan line defect when the color photographic print is folded or creased, such as in photobooks.
US08546069B2	Method for enhancing lithographic imaging of isolated and semi-isolated features The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.
US08546067B2	Material assisted laser ablation This invention provides photoablation—based processing techniques and materials strategies for making, assembling and integrating patterns of materials for the fabrication of electronic, optical and opto-electronic devices. Processing techniques of the present invention enable high resolution and/or large area patterning and integration of porous and/or nano- or micro-structured materials comprising active or passive components of a range of electronic devices, including integrated circuits (IC), microelectronic and macroelectronic systems, microfluidic devices, biomedical devices, sensing devices and device arrays, and nano- and microelectromechanical systems.
US08546064B2	Method to produce a fuel cell flowfield with photopolymer walls A method for fabricating a flowfield for a fuel cell includes the steps of: providing a substrate; providing a plurality of radiation sources configured to generate a plurality of radiation beams; disposing a radiation-sensitive material on the substrate; placing an imaging mask between the plurality of radiation sources and the radiation-sensitive material; and exposing the radiation-sensitive material to the plurality of radiation beams through a first portion of the radiation-transparent apertures and a second portion of the radiation-transparent apertures in the imaging mask to form the plurality of truss elements and the plurality of wall elements in the radiation-sensitive material, the truss elements forming a plurality of trusses configured to support an adjacent diffusion medium layer, and the wall elements defining a fluid path along a length of the substrate.
US08546060B2	Chemically amplified positive resist composition and pattern forming process A chemically amplified positive resist composition is provided comprising a polymer PB having an amine structure bound thereto and a polymer PA comprising recurring units having an acidic side chain protected with an acid labile protective group and recurring units having an acid generating moiety on a side chain.
US08546058B2	Electrostatic latent image developing toner, electrostatic latent image developer, image forming apparatus, and apparatus for manufacturing electrostatic latent image developing toner A method for forming an electrostatic latent image developing toner including mixing in a stirring tank a resin particle dispersion with at least a colorant particle dispersion prepared by dispersing a colorant and in some cases with a release agent particle dispersion prepared by dispersing a release agent; aggregating in the stirring tank the resin particles with the pigment particles and the release agent particles to form aggregate particles; and then conducting heating in the stirring tank to fuse the aggregate particles, wherein the method further comprises during a fusion step, suppressing with an accumulation suppression unit accumulation of aggregate particles. The accumulation suppression unit is a magnetic field forming unit that forms a magnetic field either continuously or intermittently. The toner has an average sphericity of at least 0.94 but no more than 0.98 and particle characteristics as defined in the specification.
US08546053B2	Toner, and production method of the same The present invention provides a method for producing a toner, the method including: preparing a wax dispersion liquid by cooling a wax solution, in which a wax is heated and dissolved or dispersed in an organic solvent, in a container so that a standard deviation σ of a temperature distribution between a center portion of the container and an inner wall of the container is 0.5 or less and the cooling rate is 2.0° C./min or more, to precipitate wax particles in the wax solution; forming toner base precursor particles by adding an aqueous phase containing resin fine particles into an oil phase containing at least the wax dispersion liquid, a colorant and a binder resin and mixing the oil phase and the aqueous phase with each other; and preparing toner base particles by removing the solvent from the toner base precursor particles.
US08546052B2	Electrophotographic photosensitive member, process cartridge and electrophotographic apparatus, and process for producing electrophotographic photosensitive member An electrophotographic photosensitive member having a surface layer containing a polymeric product obtained by polymerizing a specific adamantane compound, a process cartridge and an electrophotographic apparatus which have the electrophotographic photosensitive member, and a process for producing the electrophotographic photosensitive member.
US08546048B2	Forming sloped resist, via, and metal conductor structures using banded reticle structures A technique generating sloping resist profiles based on an exposure process uses a reticle having structures surrounded with first and second contrasting interleaved bands below the resolution limit of the stepper used to expose the resist. Exemplary embodiments include a reticle having interleaved, non-overlapping transparent and opaque bands surrounding a transparent feature with an innermost one of the opaque bands bordering the structure, such as a via opening or a metal conductors pattern, resulting in the patterned photoresist having sloped or tapered sides with consistent reproducibility. The slope in the photoresist is then transferred to the underlying layer during an etch using the tapered photoresist as a mask. Alternatively, the sloped resist can have a negative slope angle for patterning metal conductors using a metal lift-off technique.
US08546046B2	Method for fabricating bi-polar plate of fuel cell and bi-polar plate of fuel cell A method for fabricating a bi-polar plate of a fuel cell and the bi-polar plate thereof are presented. A graphite film is formed first. Next, a polymeric material added with electrically conductive powder is coated on a surface of a metal substrate. The graphite film is disposed on the polymeric material and the polymeric material is hardened to form an adhesive layer, such that the graphite film is attached on the surface of the metal substrate.
US08546045B2	Gasketed subassembly for use in fuel cells including replicated structures An electrochemical device subassembly is provided that includes a membrane electrode assembly and a gasket. The membrane electrode assembly includes an electrolyte membrane having a first major surface, a second major surface opposite the first major surface, and a peripheral edge. The gasket is disposed adjacent the first major surface of the electrolyte membrane at the peripheral edge, and has a plurality of replicated structures that extend greater than about 250 micrometers from a surface of the gasket.
US08546038B2	Fuel cell separator having reactant gas channels with different cross sections and fuel cell comprising the same A fuel cell separator of the present invention is a plate-shaped fuel cell separator including a reaction gas supply manifold hole (21), a reactant gas discharge manifold hole (22), a groove-shaped first reactant gas channel (131), and one or more groove-shaped second reaction gas channels (132, 133), wherein the first reactant gas channel (131) includes a first portion (41) and a second portion (51) located upstream of the first portion (41), and a cross-sectional area of a continuous portion extending from the upstream end of the first reactant gas channel (131) and/or a cross-sectional area of at least a portion of the first reactant gas channel (131) which lies downstream of the first portion (41) is/are smaller than cross-sectional areas of the second reactant gas channels (132, 133).
US08546027B2	System and method for directed self-assembly technique for the creation of carbon nanotube sensors and bio-fuel cells on single plane Improved nanotube devices and systems/methods for fabrication thereof are provided. The present disclosure provides systems/methods for depositing controlled numbers of nanotubes with specific properties at predefined locations for the fabrication of nanotube devices. The nanotube devices may be utilized in a range of applications. A bio-fuel cell system that does not require a proton exchange membrane separator and does not need a mediator to transfer charge is provided. This exemplary bio-fuel cell uses enzyme functionalized SWNTs for the anode/cathode. The absence of a membrane in the bio-fuel cell configuration opens up the possibility of other configurations that would otherwise be unfeasible. This includes a bio-fuel cell where the anode/cathode are on the same substrate. Since the electrodes can share the same substrate, the configuration may be integrated with a circuit device on the same substrate. An IC and its power source may be fabricated on the same silicon wafer.
US08546026B2	Gas-liquid separator, hydrogen generating apparatus, and fuel cell generation system having the same Disclosed are a gas-liquid separator, a hydrogen generating apparatus, and a fuel cell generation system, having the same. The gas-liquid separator can include an inflow path, into which a fluid material having a liquid and a gas flows; a centrifugal path, connected to the inflow path to receive the fluid material and formed spirally such that the fluid material is separated into the liquid and the gas by difference in centrifugal forces, an outer side of the centrifugal path having stronger affinity for the liquid than an inner side of the centrifugal path; and an outflow path, connected to the centrifugal path and discharging the liquid and the gas, which have been separated in the centrifugal path. With the present invention, it is possible to efficiently separate gas such as hydrogen and liquid such as a electrolyte solution without complex devices.
US08546024B2	Non-aqueous electrolyte lithium secondary battery A lithium secondary battery has an anode, a cathode, a separator between the anode and the cathode and a non-aqueous electrolyte. The non-aqueous electrolyte includes a lithium salt; and a non-linear carbonate-based mixed organic solvent in which (a) a cyclic carbonate compound, and (b) a propionate-based compound are mixed at a volume ratio (a:b) in the range from about 10:90 to about 70:30, and optionally (c) a vinylene carbonate; and an inhibitor against a reaction between the anode and the propionate-based ester compound. The cathode has a current density in the range from about 3.5 to about 5.5 mA/cm2 and a porosity in the range from about 18 to about 35%. This battery may be manufactured as a high-loading lithium secondary battery.
US08546013B2	Cylindrical battery and method of manufacturing the same A cylindrical battery is formed by sealing an electrode wound body in a cylindrical case and having an outer terminal member mounted to one end of the battery so as to axially penetrate through a gasket having a cylindrical portion and collar portions. A neck is formed at the inner surface of the case. A flange having an outer diameter greater than the inner diameter of the neck is formed on the outer terminal member. To mount the outer terminal member to the case, the gasket is mounted to the flange, liquid is charged from a through-hole with the flange held in a temporarily sealed state in which the flange is pressed into the case until being in contact with the neck, and an end portion of the case is bent to the inner surface side thereof to press the collar portion to the flange to complete sealing.
US08546009B2	Method and apparatus for thermal energy transfer A thermal energy transfer element includes a thermally conductive core and, in some embodiments, a sleeve. The core has first and second portions. The first portion is for placement in direct contact with and to be surrounded by an electrolyte. The sleeve surrounds at least the first portion of the transfer element. The first portion conducts thermal energy between the electrolyte and the second portion.
US08546008B2	Electronic device facilitating loading or unloading of battery through latching module Provided is an electronic device, comprising: a casing, comprising an accommodation space that a battery is detachably assembled therein. The battery comprises a hook extending towards the casing, a first and a second urging surfaces that a step connected there between; and a latching module, disposed in the casing and moving back and forth between a first and a second positions. When the latching module moves from the first position towards the second position, the hook, the first urging surface, the step, and the second urging surface are sequentially located in a moving path of a urging portion of the latching module. When the latching module is located at the first position, the urging portion is buckled to the hook. When the latching module is located at the second position, the urging portion is limited by the step and rests on the second urging surface.
US08546002B2	Yeast biofilm based fuel cell A yeast biofilm microbial fuel cell has anode and cathode chambers, each containing an electrolyte medium, separated by a proton conducting membrane. A baker's yeast biofilm is induced to form on the anode under electrical poising. A method of making the MFC includes adding baker's yeast and yeast nutrient fuel source to the anode solution, connecting a resistor across the anode and cathode to enable current flow through the resistor for a selected time for poising the anode and formation of the anodic yeast biofilm, replacing the anode solution with a fresh quantity of yeast-free solution, adding fuel source to the solution, and continuing to run the MFC for a selected time under resistance. The steps of replacing the anode solution, adding fuel source and running the cell under load are repeated until the baker's yeast has formed a suitable anodic biofilm.
US08546000B2	Perpendicular magnetic disc A perpendicular magnetic disk that includes, a base 110, a granular magnetic layer 160, and a auxiliary recording layer 180 disposed as an upper layer of the granular magnetic layer 160. The granular magnetic layer 160 has a granular structure in which a grain boundary portion is formed by segregation of a non-magnetic substance containing an oxide as a main component around magnetic particles containing a CoCrPt alloy grown in a columnar shape as a main component. The auxiliary recording layer 180 contains a CoCrPtRu alloy as a main component and has a film thickness of 1.5 nm to 4.0 nm. With this structure, the auxiliary recording layer can be thinned while maintaining the function thereof to improve SNR.
US08545994B2	Electrodeposited metallic materials comprising cobalt An article includes an electrodeposited metallic material including Co with a minimum content of 75% by weight. The metallic material has a microstructure which is fine-grained with an average grain size between 2 and 5,000 nm and/or an amorphous microstructure. The metallic material forms at least part of an exposed surface of the article. The metallic material has an inherent contact angle for water of less than 90 degrees at room temperature when measured on a smooth exposed surface portion of the metallic material which has a maximum surface roughness Ra of 0.25 microns. The metallic material has an exposed patterned surface portion having surface structures having a height of between at least 5 microns to about 100 microns incorporated therein to increase the contact angle for water at room temperature of the exposed patterned surface portion to over 100 degrees.
US08545992B2	Aluminum article An aluminum article includes a substrate made of aluminum or aluminum alloy, a Ni—Cu—P alloy layer formed on the substrate, and a Ni—P alloy layer directly formed on the Ni—Cu—P alloy layer. The Ni—Cu—P alloy layer consists substantially of nickel, copper, and phosphorus and has a crystalline state. The Ni—P alloy layer consists substantially of nickel and phosphorus and has an amorphous structure. A method for making the aluminum article is also provided.
US08545991B2	Low thermal conductivity misfit layer compounds with layer to layer disorder Compositions comprise an alternating plurality of ordered layers of a first composition MX and a second composition TX2, wherein M is one of Sn, Pb, Sb, Bi, or a rare earth metal, X is S or Se and T is Ti, V, Cr, Nb, or Ta. In some examples, the alternating plurality of ordered layers conforms to a substrate. In typical examples, each of the ordered layers of the first composition has a common thickness and/or each of the ordered layers of the first material has a common composition. In some examples, each of the ordered layers of the second composition has a common thickness and/or a common composition.
US08545990B2	Coated article and method for manufacturing A coated article includes a substrate, a first magnesium-tin alloy layer, a tin layer, a second magnesium-tin alloy layer, a magnesium layer and a magnesium-nitrogen layer. The substrate is made of magnesium or a magnesium alloy. The substrate made of magnesium or magnesium alloy. The first magnesium-tin alloy layer formed on the substrate. The tin layer formed on the first magnesium-tin alloy layer. The second magnesium-tin alloy layer formed on the tin layer. The magnesium layer formed on the second magnesium-tin alloy layer. The magnesium-nitrogen layer formed on the magnesium layer.
US08545987B2	Thermal interface material with thin transfer film or metallization According to various aspects, exemplary embodiments are provided of thermal interface material assemblies. In one exemplary embodiment, a thermal interface material assembly generally includes a thermal interface material having a first side and a second side and a metallization layer having a layer thickness of about 0.0005 inches or less. The metallization layer is disposed along at least a portion of the first side of the thermal interface material.
US08545983B2	Super-low fouling sulfobetaine materials and related methods Super-low fouling sulfobetaine and carboxybetaine materials, super-low fouling surfaces and methods of making the surfaces coated with sulfobetaine and carboxybetaine materials, and devices having the super-low fouling surfaces.
US08545978B2	Composite film To provide a composite film having low-temperature flexibility. The composite film including an acrylic polymer and a urethane polymer, in which the acrylic polymer includes an acryl component containing at least an acrylic acid-based monomer and a monofunctional acrylic monomer whose homopolymer has a glass transition temperature (Tg) of 273 K or more; the content of said acrylic acid-based monomer in said composite film is from 0.5 to 15 wt %; the glass transition temperature (Tg ac) of the acrylic polymer is 273 K or more; the glass transition temperature (Tg ur) of the urethane polymer is 273 K or less; and the glass transition temperature (Tg) of the composite film is 269 K or less.
US08545977B2	Polymer concrete electrical insulation Polymer concrete electrical insulation including a hardened epoxy resin composition filled with an electrically non-conductive inorganic filler compositions. The polymer concrete electrical insulation system optionally may contain additives. The epoxy resin composition is based on a cycloaliphatic epoxy resin. The inorganic filler composition can be present within the range of about 76% by weight to about 86% by weight, calculated to the total weight of the polymer concrete electrical insulation system. The inorganic filler composition includes a uniform mixture of (i) an inorganic filler with an average grain size within the range of 1 micron (μm) to 100 micron (μm) [component c(i)], and (ii) an inorganic filler with an average grain size within the range of 0.1 mm (100 micron) to 2 mm [component c(ii)]. The inorganic filler with an average grain size within the range of 1 micron (μm) to 100 micron (μm) [component c(i)] can be present in an amount within the range of 22% to 42%, calculated to the total weight of the polymer concrete electrical insulation system; and (e) the inorganic filler with an average grain size within the range of 0.1 mm to 2 mm [component c(ii)] is present within the range of 41% to 61% by weight, calculated to the total weight of the polymer concrete electrical insulation; and method of producing said electrical insulation.
US08545972B2	Controlled vapor deposition of multilayered coatings adhered by an oxide layer An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.
US08545969B2	Pattern-formed substrate, pattern-forming method, and die A pattern-formed substrate is provided. The pattern-formed substrate includes a substrate base, an organic thin film and an inorganic resist film stacked on the substrate base in this order, and patterns having predetermined aspect ratios formed on the organic thin film and the inorganic resist film, respectively. The pattern of the organic thin film is formed by selective etching using the pattern of the inorganic resist film as a mask.
US08545967B2	Multi coated metal substrate and method for the production thereof A metal sheet, inclusive of a metal strip, having a front side and a back side, both the front side and the back side comprising a first coating having an average thickness in the range from 0.5 to 10 μm, wherein the first coating of the front side contains particles, which release divalent or multivalent metal ions upon the action of an acid, in such an amount that a self-depositing coating agent forms, upon contact with the front side, a second coating thereon, whereas this is not the case for the first coating of the back side. The first coating of the front side can be overcoated with a self-depositing coating agent. Cut edges that do not have a first coating can be covered with the self-depositing coating agent. Correspondingly coated metal sheets, as well as a method for the manufacture thereof, are furthermore within the scope of the invention.
US08545965B2	Method of manufacturing of lightweight structural trim part and lightweight structural trim part produced A method for manufacturing a lightweight structural trim part is comprising the following steps: (A) inserting a plurality of layers into a molding tool comprising a first molding half (6) and a second molding half (7). The second molding half (7) comprises a plurality of cup-like indentation (8). The plurality of layers at least comprises a first air permeable skin layer (1) facing the first molding half (6), a second air tight skin layer (3,4) facing the second molding half (7), and a film layer (2) between the two skin layers. (B) Closing the molding tool and discharging gas from one side in order to press the first skin layer against the first molding half. (C) Shaping and consolidating the first porous skin layer. (D) Charging with pressurized air the first space in order to press the second skin layer against the second molding half. (E) Shaping and consolidating the second skin layer. (F) Meanwhile bonding the first and second skin layer to each other in the area between the cup-like indentations, in order to form an acoustic body comprising a plurality of cup-like cavities.
US08545962B2	Nano-fiber arrayed surfaces Surfaces are provided comprising an array of partially embedded nano-fibers. Two such surfaces may contact each other such that the respective nano-fibers contact at orthogonal angles, resulting in ultra-low friction and ultra-low adhesion contact. Such configurations are useful in several NEMS or MEMS applications, as well as macro-sized applications. Alternatively, the surfaces may contact each other such that the respective nano-fibers are parallel. These configurations are useful in micro-stage or high-order three-dimensional self assembly applications.
US08545960B2	Articles comprising protective sheets and related methods Methods of the invention include those for applying protective sheets to articles. According to these methods and resulting articles, a protective sheet is applied to at least a portion of an exterior surface where protection is desired on an article. At least one portion of at least one exterior surface of the article to be protected can be integrally formed in the presence of the protective sheet. Improved bonding of the protective sheet to the article and improved processing efficiency are advantageously achieved according to the invention.
US08545958B2	Reinforced block made from composite material and method for reinforcing a composite block A block including at least one glass ply at least partially covering an outer surface of a core made from composite material. A method for reinforcing a block made from a composite material, including a glass ply placed in a mold, such as to cover the base of the mold; the block is positioned in the mold; the edges of the glass ply are folded such that the glass ply is molded to the outer edge of the block; the mold is closed with a cover; the block housed inside the mold is cured in an oven such as to polymerize the glass ply; and the glass-ply-covered block is recovered.
US08545946B2	Liquid crystal alignment solution A liquid crystal alignment solution is provided, including at least one polymer selected from the group consisting of a polyamide acid-polyamide acid polymer represented by formula (A), a polyimide-polyamide acid polymer represented by formula (B) and a polyimide-polyimide polymer represented by formula (C), as defined in the contexts.
US08545945B2	Micropattern generation with pulsed laser diffraction Methods and devices for preparing microscale polymer relief structures from a thin polymer layer on an absorbing substrate are described. The described methods are ultrafast (about 8 nanoseconds) and allow formation of patterned microstructures having complex morphologies and narrow line widths that are an order of magnitude smaller than the masks used in the methods.
US08545941B2	Method of drying coating liquid agent and apparatus therefor In an oven used for printing machine and the like, drying is rendered possible to be conducted without decreasing traveling speed (120 m/min or more) by a short and compact drying zone for a coating liquid agent which is made aqueous as well as oily coating liquid agent. A plurality of hot air blow-off nozzles 222 are provided in the drying portion 220 of the first printing unit 200. Heating guide rolls 223a are provided at the former portion, and cooling guide rolls 223b are provided at the latter portion, so that they meet the hot air blow-off nozzles 222. Liquid delivery pipes 224a for injecting hot water are connected to the heating guide rolls 223a, and liquid delivery pipes 224b for injecting cooling water are connected to the cooling guide rolls 223b. Introduced raw web 1 is heated to the boiling point of solvent or higher than that by the heating guide rolls 223a.
US08545939B2	Method and device for the infiltration of a structure of a porous material by chemical vapour deposition A method and a device for infiltration of a structure made of a porous material by chemical vapor deposition. According to the method, a first face of the porous material structure is exposed to a gaseous flow, and the second face is maintained at least partially free from any contact.
US08545936B2	Methods for forming carbon nanotubes Methods of forming a roughened metal surface on a substrate for nucleating carbon nanotube growth, and subsequently growing carbon nanotubes are provided. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may then be used as nucleation points for initiating carbon nanotube growth. The carbon nanotubes are grown in the same process chamber (in-situ) as the formation of the three dimensional metal islands without exposing the substrate to air.
US08545927B2	Lactoferrin-based biomaterials for tissue regeneration and drug delivery The invention provides biomatrix compositions comprising cross-linked lactoferrin, either alone or in combination with other organic or inorganic components. Also provided are methods of making and using the biomatrix compositions. As described herein, cross-linked lactoferrin biomatrix retains the bioactivities of the lactoferrin molecule. The biomatrix composition can act as a matrix for cell adhesion and growth and is particularly useful in musculoskeletal tissue regeneration. The biomatrix compositions can be pre-formed or injectable and can act as a cell, drug or protein delivery vehicle.
US08545926B2	Method of forming insulated conductive element having substantially continuously coated sections separated by uncoated gaps Coating an elongate, uncoated conductive element with a barrier layer to form an insulated conductive element. The insulated conductive element comprises substantially continuously coated elongate sections separated by uncoated gaps which are substantially small relative to the lengths of the coated sections.
US08545925B2	Candy composition with excellent sweetness and candy using the same It is an object of the invention is to provide a candy composition in which a sugar alcohol is used as a main raw material and which is comparable in intensity of sweetness and quality of sweetness to sugar as well as a candy manufactured using the same.The above object can be accomplished by providing a deliciously sweet candy composition which comprises sugar alcohol as a main raw material and comprises high sweetness intensity sweetener (E), flavoring components (A) maltol and (B) furaneol as essential components, each in an effective amount, and an effective amount of at least one component selected from among flavoring components (C) cyclotene and (D) menthyl acetate.
US08545923B2	Method of cutting ham and product thereof A ham product and method for production thereof described herein separate bone-in hams into smaller pieces. Accordingly, pieces of bone-in ham, even those spirally-sliced, will be available to consumers in smaller portions. Unlike conventional methods, however, the ham product provides three or four pieces of essentially equal size that each have a nearly equal meat-to-bone ratio. Furthermore, when a spiral cut ham is separated into pieces, each piece includes a portion of the femur and retains attachment of the slices to the femur so that the slices stay intact during handling and packaging and so that the pieces retain the natural shape and easy handling desired by consumers.
US08545922B1	Method for reducing microbial contamination for poultry A method of reducing pathogenic bacteria in the neck of poultry is provided. The method includes opening up a neck of a poultry (20) and rupturing cervical air sacs (12). The exposed, ruptured cervical air sacs are treated with an antibacterial agent, thereby reducing pathogenic bacteria.
US08545921B2	Chocolate composition The invention relates to chocolate compositions where the fat phase comprises at least cocoa butter and optionally milk fat and/or a cocoa butter equivalent and the chocolate can be liquefied and re-solidified without bloom and without a pre-crystallization step.
US08545918B2	Method of cutting ham and product thereof A ham product and method for production thereof described herein separate bone-in hams into smaller pieces. Accordingly, pieces of bone-in ham, even those spirally-sliced, will be available to consumers in smaller portions. Unlike conventional methods, however, the ham product provides three or four pieces of essentially equal size that each have a nearly equal meat-to-bone ratio. Furthermore, when a spiral cut ham is separated into pieces, each piece includes a portion of the femur and retains attachment of the slices to the femur so that the slices stay intact during handling and packaging and so that the pieces retain the natural shape and easy handling desired by consumers.
US08545917B2	Preparation of an edible product from dough The present invention is directed to mold control and extended shelf life methods and compositions for preparing edible dough-based products, such as, for example, breads, by treating the surface of the dough used to prepare the edible product with at least one preservative and at least one pH adjusting agent prior to or during baking. The present invention is also directed to methods and compositions for preparing edible dough-based products, such as, for example, breads, by treating the surface of the dough used to prepare the edible product with a at least one pH adjusting agent prior to or during baking. The present invention is further directed to improved pan oil compositions for preparing edible dough based products which comprise at least one preservative in an amount effective to inhibit mold growth on the surface of the bread prepared from the dough and at least one pH adjusting agent in an amount effective to improve the activity of the at least one preservative and/or inhibit microbial growth on the surface of the bread prepared from the dough.
US08545910B2	Method of processing green coffee beans by using surface-treated coffee cherries There is provided a method for processing green coffee beans capable of imparting new aromas and flavors to a coffee beverage using a simple operation, without incurring an increase in raw material costs.The method for processing green coffee beans includes a fermentation step of bringing nutritive substances included in coffee cherries and microorganisms into contact with one another and causing fermentation, and a collection step of separating and collecting green coffee beans from the coffee cherries that have undergone the fermentation step, wherein in the fermentation step, at least part of the pulp of the coffee cherries is exposed, and the microorganisms are caused to come into direct contact therewith.
US08545909B2	Method of producing non-bovine chymosin and use hereof A method of recombinantly producing a non-bovine pre-prochymosin, prochymosin or chymosin derived from ruminant species including deer species, buffalo species, antelope species, giraffe species, ovine species and caprine species; Camelidae species such as Camelus dromedarius; porcine species; or Equidae species. The recombinant enzymes are used in milk coagulating compositions in cheese manufacturing based on cow's milk and milk from any animal species which are used in cheese manufacturing including camel's milk.
US08545906B2	Pest-impervious packaging material and pest-control composition A composition-of-matter comprising a substance usable in producing packaging material and at least one compound selected from the group consisting of ar-turmerone, a sesquiterpene alcohol and a turmeric oleoresin solid residue.
US08545905B2	Whitening cosmetic composition containing green tea extract The present invention relates to a whitening cosmetic composition containing a green tea extract and, more particularly, to a whitening cosmetic composition containing a green tea extract that is prepared from green tea leaves by hot water extraction and liquid culture with Aspergillus oryzae to provide a high inhibitory effect on tyrosinase.
US08545901B2	Topical composition comprising extracts of A. indica and M. charantia or S. indicum The invention relates to a topical composition and a method for reducing or preventing occurrence of acne on the skin. It is an object of the present invention to provide for a combination of herbal extracts that interact synergistically to provide a cosmetic composition for prevention, reduction or treatment of acne. The present invention provides for a topical composition comprising (i) an extract of a first active which is Azhadirachta indica; and (ii) an extract of a second active selected from Momordica charantia or Sesamum indicum.
US08545900B2	Method of obtaining total fixed lipids from seeds of the sapotaceae family, for the preparation of cosmetics and dermatological pharmaceutical compositions Procedure for the obtaining a concentrate of the total fixed lipids of the kernels of the family Sapotaceae, genus Calocarpum, Chrysophyllum and Lucuma. The kernels (seeds removed of the endocarp), are squeezed by means of mechanical techniques that use pressure and heat, without using extractive liquids, getting a concentrate of lipidic juices (virgin) in a dry way and with their characteristic aroma. This concentrate of total fixed lipids can be fractioned in its main constituents by means of a process that consist of the emulsification of the lipids, followed by centrifugation or sedimentation, giving place to the stratification of the main constituents and their consequent separations. The main constituent consist of oils, of phospholipids and of residues glucosidic triterpenes plus of sterols fractions. These fraction or as a whole concentrate are used to prepare cosmetics and pharmaceutical compositions of topical application, to act in the skin like anti-seborrheic, healing, promoter of delicate defoliation and as invigorated epithelia regeneration agents, as cutaneous anti-wrinkle agent and as adjuvant in the development of the hair.
US08545893B2	Keratin biomaterials for treatment of ischemia Provided herein are keratin compositions useful for treating ischemia and/or reperfusion injury, such as that associated with myocardial infarct, ischemic stroke, brain trauma such as traumatic brain injury, hypothermia, chronic wounds, and burns.
US08545887B2	Modified release dosage forms A dosage form comprises: (a) at least one active ingredient: (b) a core having a first surface portion upon which resides a first coating and a second surface portion which is substantially free of the first coating; and (c) a shell which resides upon at least a portion of the second surface portion, wherein the shell comprises a different material from the first coating. In another embodiment, the dosage form comprises: (a) at least one active ingredient; (b) a core comprising a center portion having an exterior surface and an annular portion having an exterior surface and an interior surface, wherein the annular portion interior surface is in contact with at least a portion of the center portion exterior surface, and a coating resides on at least a portion of the annular portion exterior surface; and (c) a shell which resides upon at least a portion of the exterior surface of the center portion, wherein the shell comprises a different material than the impermeable coating. In another embodiment, the dosage form comprises: (a) at least one active ingredient; (b) a core having an outer surface and a cavity which extends at least partially through the core such that the core outer surface has at least a first opening therein; (c) a first coating which resides on at least a portion of the core outer surface, wherein the first shell portion comprises a different material from the first coating; and (d) a first shell portion which is adjacent to the first opening and covers at least the first opening.
US08545886B2	Extended release tablet formulations of flibanserin and method for manufacturing the same The invention is directed to a Pharmaceutical extended release system, particularly for oral administration, of a pH-dependent water-soluble active substance, comprising or essentially consisting of a) flibanserin or a pharmaceutically acceptable derivative thereof as active substance; b) one or more pharmaceutically acceptable pH-dependent polymers; c) one or more pharmaceutically acceptable pH-independent polymers; d) one or more pharmaceutically acceptable acids; and e) optionally one or more additives. The present invention provides a release profile of flibanserin which is independent on the pH in the gastrointestinal tract when administered orally resulting in a significantly improved bioavailability.
US08545885B2	Stable laquinimod preparations The subject invention provides a pharmaceutical composition comprising N-ethyl-N-phenyl-1,2,-dihydro-4-hydroxy-5-chloro-1-methyl-2-oxoquinoline-3-carboxamide or the salt thereof; a pharmaceutically acceptable carrier; and not more than 0.5% w/w relative to N-ethyl-N-phenyl-1,2,-dihydro-4-hydroxy-5-chloro-1-methyl-2-oxoquinoline-3-carboxamide of 2-Chloro-6-(1-ethyl-N-methyl-2-oxoindoline-3-carboxamido)benzoic acid, 1H,3H-spiro[5-chloro-1-methylquinoline-2,4-dione-3,3′-[1]ethylindolin-[2]-one], or 5-Chloro-N-ethyl-3-hydroxy-1-methyl-2,4-dioxo-N-phenyl-1,2,3,4-tetrahydro-quinoline-3-carboxamide.
US08545884B2	Solid pharmaceutical formulations comprising BIBW 2992 The present invention relates to a pharmaceutical dosage form containing the active substance BIBW 2992 as the dimaleate salt, providing an immediate release profile of the active substance, further, the invention relates to compacted intermediates comprising BIBW 2992 dimaleate salt (BIBW 2992 MA2) in form of a powder prepared using a combined roller compaction and sieving step from BIBW 2992 MA2, intermediate blends prepared from said compacted intermediate as well as solid oral formulations providing an immediate release profile of the active substance, made from said compacted intermediate or from said intermediate blends ready for use/ingestion, e.g. capsule and tablet formulations such as uncoated or film-coated tablets prepared by direct-compression, and methods for their production.
US08545883B2	Modular systems for the controlled release of a substance with space and time control An innovative pharmaceutical form for controlled drug release relates to systems obtained by the assembly of individual release modules, of which the capacity to release the drug in time and in space depends on the way in which the modules have been assembled. The modular structure offers high reproducibility of manufacture and flexibility of release.
US08545880B2	Controlled release oral dosage form A once a day bupropion hydrochloride formulation is disclosed.
US08545876B1	Modified drugs for use in liposomal nanoparticles Drug derivatives are provided herein which are suitable for loading into liposomal nanoparticle carriers. In some preferred aspects, the derivatives comprise a poorly water-soluble drug derivatized with a weak-base moiety that facilitates active loading of the drug through a LN transmembrane pH or ion gradient into the aqueous interior of the LN. The weak-base moiety can optionally comprise a lipophilic domain that facilitates active loading of the drug to the inner monolayer of the liposomal membrane. Advantageously, LN formulations of the drug derivatives exhibit improved solubility, reduced toxicity, enhanced efficacy, and/or other benefits relative to the corresponding free drugs.
US08545875B2	Nanolipidic particles Nanolipidic Particles (NLPs) having average mean diameters of 1 nm to 20 nm are made from a precursor solution. NLPs can be loaded with a desired passenger molecule. Assemblies of these particles, called NLP assemblies, result in a vehicle population of a desired size. Single application or multifunction NLP assemblies are made from the loaded NLPs and range in size from about 30 to about 200 nm. A method of using preloaded NLPs to make larger carrier vehicles or a mixed population provides increased encapsulation efficiency. NLPs have application in the cosmetics, pharmaceutical, and food and beverage industries.
US08545872B2	Device for the transdermal administration of a rotigotine base The invention relates to a polymer matrix suitable for the transdermal administration of rotigotine [(−)-5, 6, 7, 8-tetrahydro-6-[propyl[2-(2-thienyl)ethyl]amino]-1-naphtol], containing a matrix for the transdermal administration of rotigotine [(−)-5, 6, 7, 8-tetrahydro-6-[propyl[2-(2-thienyl)ethyl]amino]-1 naphtol], containing a matrix polymer which is supersaturated with a rotigotine base. Said polymer matrix is characterised in that the part of the rotigotine which is not dissolved in the matrix polymer is dispersed in the matrix polymer as amorphous particles having a maximum mean diameter of 30 μm, and the matrix is free of solubilisers, crystallisation inhibitors and dispersants. The invention also relates to a flat device for the transdermal administration of rotigotine, containing the above-mentioned, preferably silicon-based polymer matrix which is supersaturated with rotigotine, and a rear layer which is impermeable to the active ingredient.
US08545868B2	Drug eluting implantable medical device with hemocompatible and/or prohealing topcoat The present invention relates to implantable medical devices coated with polymer having hemocompatible and/or prohealing moieties appended thereto and to their use in the treatment of vascular diseases.
US08545866B2	Bioabsorbable polymers Described herein are biocompatible compositions that contain a copolymer and a filler material. In particular, described herein are compositions that include a copolymer and a filler which may be a calcium salt. Also described herein are methods in which the compositions are used to attach soft tissue to bone.
US08545859B2	Use of acrylates copolymer as waterproofing agent in personal care applications The present invention relates to the use of acrylate copolymers, which provide excellent water resistance to personal care products without the undesirable waxy, greasy or heavy feel. Further, these acrylate copolymers are easy for manufacturers to use as they can be easily incorporated into the water phase without special processing.
US08545844B2	Humanized antibodies against human IL-22RA The invention relates to humanized antibodies against human IL-22RA and to their use in the treatment of psoriasis and other immune-mediated diseases such as psoriatic arthritis and atopic dermatitis.
US08545842B2	Polynucleotides encoding IL-17 receptor A antigen binding proteins The present invention relates to IL-17 receptor A (IL-17RA or IL-17R) antigen binding proteins, such as antibodies, and the polynucleotide sequences encoding them, as well as host cells, expression vectors, and methods of making IL-17 receptor A antigen binding proteins.
US08545841B2	Methods and compositions for the treatment of cancers and pathogenic infections The subject application provides small compounds that are able to suppress autophagy in various cells. These compounds are useful in augmenting the existing treatments of various cancers and microbial/parasitic infections. Thus, the subject application also provides methods of treating various types of cancers and microbial/parasitic infections. Also provided by the subject application are methods of suppressing the expansion of autophagosomes within cells or individuals and inhibiting the lipidation of autophagy-related protein 8 (Atg8).
US08545840B2	Methods for treating cancer using an immunotoxin The present invention relates to methods for preventing or treating head and neck squamous cell cancer and bladder cancer using an immunotoxin comprising (a) a ligand that binds to a protein on the cancer cell attached to; (b) a toxin that is cytotoxic to the cancer cell. In a specific embodiment, the invention is directed to the prevention or treatment of head and neck squamous cell cancer or bladder cancer using VB4-845, which is a recombinant immunotoxin comprising a humanized, MOC31-derived, single-chain antibody fragment that is fused to a truncated form of Pseudomonas exotoxin A. Also encompassed by the invention are combination therapy methods, including the use of reduced dosages of chemotherapeutic agents, for the prevention or treatment of cancer. Also encompassed by the invention are formulations and methods for direct administration of the recombinant immunotoxin to the carcinoma, for the prevention or treatment of cancer.
US08545839B2	Anti-c-Met antibody The invention relates to a novel antibody capable of binding specifically to the human c-Met receptor and/or capable of specifically inhibiting the tyrosine kinase activity of said receptor both in a ligand-dependent and in a ligand-independent manner, with an improved antagonistic activity, said antibody comprising a modified hinge region.The invention also relates to a composition comprising such an antibody antagonist to c-Met and its use as a medicament for treating cancer.
US08545837B2	Methods and compositions for CNS delivery of iduronate-2-sulfatase The present invention provides, among other things, compositions and methods for CNS delivery of lysosomal enzymes for effective treatment of lysosomal storage diseases. In some embodiments, the present invention includes a stable formulation for direct CNS intrathecal administration comprising an iduronate-2-sulfatase (I2S) protein, salt, and a polysorbate surfactant for the treatment of Hunters Syndrome.
US08545834B2	G-substrate for the treatment and prevention of parkinson's disease The invention features methods and compositions for the treatment and prevention of Parkinson's Disease.
US08545829B2	Pharmaceutical preparations for oral administration, containing ion-exchange resins loaded with active ingredients and intrinsically viscous gelling agents as thickening agents The present invention relates to pharmaceutical preparations for oral administration, comprising one or more active substances bound to an ion exchanger. In order to improve physical stability and acceptance, particularly in animals, a pseudoplastic gel-former thickener is included.
US08545827B2	Conditioning composition for hair The present invention is related to an aqueous conditioning composition for hair comprising at least one alkyl glyceryl ether and at least one arylated silicone. Conditioning composition of the present invention can be in the form of a shampoo, cleansing—conditioning composition, or in the form of a conditioner used after washing hair with cleansing compositions. It has surprisingly been found out that a composition comprising at least one alkyl glyceryl ether and at least one arylated silicone gives hair shine, and hair treated with such a composition looks attractive and has its natural excellent shine, volume and body, elasticity, smoothness and it is easily manageable. Accordingly, the present invention is on a conditioning composition for hair comprising at least one alkyl glyceryl ether and at least one arylated silicone.
US08545823B2	Cosmetic nanocomposites based on in-situ crosslinked POSS materials A cosmetic composition for caring for and/or making up the skin, lips and/or body in the form of a film, which is non-transferable, long-lasting with a comfortable feeling of use to consumers over long periods of wear time. The composition contains graftable POSS which forms a film when it cures in situ. The invention also relates to using such film for preparing a cosmetic composition and a makeup process and makeup kit comprising the product.
US08545820B2	Use of titanium-based materials as bactericides Compositions containing metal ions bound into a titanate are described which have demonstrated an ability to suppress bacterial growth of a number of organisms associated with periodontal disease and caries.
US08545819B2	Oral care toothpowder composition with fluoride ion source A toothpowder oral care composition of fluoride ion source particulate (such as stannous fluoride particulate) dispersed in an oral calcium carbonate abrasive particulate bed is achieved with careful adjustment of the particle sizes of both the fluorinated particulate and the abrasive particulate to achieve a bed of toothpowder where neither the fluorinated particulate or the abrasive particulate will settle to create a localized concentration of the fluoride significantly different from the average concentration of the fluoride throughout the bed.
US08545817B2	Cosmetic composition comprising at least one polysaccharide of λ-carrageenan type in aerosol form, method for the cosmetic treatment of keratinous fibers, and product comprising the composition Disclosed herein is a cosmetic composition for the treatment of keratinous fibers, for example, human keratinous fibers, such as the hair, in the form of an aerosol comprising at least one polysaccharide of lambda-carrageenan type and carbon dioxide as propellant. Also disclosed herein is a cosmetic treatment method for keratinous fibers comprising applying such a composition to the keratinous fibers.
US08545816B2	Benzoic acid ester compounds, compositions, uses and methods related thereto Benzoic acid ester compounds of formula (I): wherein R and R1-R5 have the meanings explained in the description, methods for producing them and use thereof in cosmetic, pharmaceutical, personal care and industrial preparations as sunscreens based on photochemical precursor properties of ultraviolet absorbers.
US08545815B2	VOC-free compressed gas aerosol composition Certain surfactants suitable for use alone to dissolve a water-insoluble component in compositions is described for providing VOC-free compressed gas aerosol compositions. The compositions include water-insoluble component(s), a surfactant and water. The water-insoluble component(s) can be active agent(s), such as fragrance(s) and/or an insecticide(s). The surfactant is present as a single surfactant which, in the absence of a solvent, dissolves or disperses the water-insoluble component(s) and provides a homogenous blend in water which provides a stable compressed gas emulsion. The surfactant is an anionic surfactant or a nonionic surfactant, in particular nonionic alkylpolyglycosides; nonionic cocoglucoside; nonionic alkylene oxide extended chain alkylpolyglycosides; anionic sodium lauryl ether sulfate (SLES), nonionic C13-C15 oxoalcohol ethoxylate with 8 ethylene oxides (EO), nonionic C12-C14 secondary alcohol ethoxylate with 7EO or 12EO, polyethylene glycol (PEG) hydrogenated castor oil wherein the PEG is PEG-60 or PEG-40, polyglyceryl-10 laurate and polyglyceryl-6 caprylate.
US08545813B2	Pre-templated macromolecular architectures with multiple Gd(III) complexes and methods of use as MRI contrast agents The present invention relates to contrast agents for MRI and related methods of use.
US08545812B2	Transport agents for crossing the blood-brain barrier and into brain cancer cells and methods of use thereof The present invention discloses methods and materials for delivering a cargo compound into a brain cancer cell and/or across the blood-brain barrier. Delivery of the cargo compound is accomplished by the use of protein transport peptides derived from Neisseria outer membrane proteins, such as Laz. The invention also provides synthetic transit peptides comprised of the pentapeptide AAEAP. The invention further discloses methods for treating cancer, and specifically brain cancer, as well as other brain-related conditions. Further, the invention provides methods of imaging and diagnosing cancer, particular brain cancer.
US08545808B2	Compositions for radiolabeling diethylenetriaminepentaacetic acid (DTPA)-dextran The subject invention relates to the compositions for radiolabeling Diethylenetriaminepentaacetic Acid (DTPA)-dextran with Technetium-99m and for stabilizing the DTPA-dextran Cold Kit. The composition contains Stannous Chloride ions to reduce 99mTc-pertechnetate, Ascorbic Acid to reduce stannic ions to stannous ions to maintain a reducing environment, α,α-Trehalose to add bulk and to stabilize the lyophilized composition without interfering with the radiochemical yield, and Glycine to transchelate Technetium-99m under highly acidic conditions to facilitate radiolabeling DTPA-dextran with high radiochemical purity. In addition, the invention pertains to methods for making and using the compositions. The reconstitution of the lyophilized composition by 99mTc-pertechnetate, resulting in radiolabeled 99mTc-DTPA-dextran in a composition between pH 3 to 4. This invention contains a Diluent vial, which when used will shift the pH to a moderately acidic pH, which would provide less pain on injection and ease-of-use to clinical practitioners for adjusting its potency.
US08545807B2	Near infrared high emission rare-earth complex The present invention has been created to provide a near infrared high emission rare-earth complex having an excellent light-emitting property in the near infrared region. The near infrared high emission rare-earth complex of the present invention is characterized in that its structure is expressed by the following general formula (1): where Ln(III) represents a trivalent rare-earth ion; n is an integer equal to or greater than three; Xs represent either the same member or different members selected from a hydrogen atom, a deuterium atom, halogen atoms, C1-C20 groups, hydroxyl groups, nitro groups, amino groups, sulfonyl groups, cyano groups, silyl groups, phosphonic groups, diazo groups and mercapto groups; and Z represents a bidentate ligand.

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