Document Document Title
US08749105B2 Magnetic inductor rotary machine and fluid transfer apparatus that uses the same
A high-efficiency magnetic inductor rotary machine in which eddy current loss is reduced even if driven at super-high-speed rotation, and a fluid transfer apparatus that uses the same. In the magnetic inductor rotary machines, first and second stator cores are disposed coaxially such that circumferential positions of teeth are aligned, and first and second rotor cores are fixed coaxially to a rotating shaft such that salient poles are offset by a pitch of half a salient pole circumferentially, and are disposed on an inner peripheral side of the first and second stator cores. A salient pole width of the salient poles of the first and second rotor cores is configured so as to be greater than an opening width of slots of a stator.
US08749104B2 Rotating electric machine, especially synchronous permanent magnet machine
A rotating electric machine, especially synchronous permanent magnet machine, is provided. The machine includes a rotor with a given number of magnets distributed along the circumference and a given number of rotor pole pairs, and further comprising a stator with a given number of stator pole pairs and a given number of stator slots. The efficiency and the power of the machine are improved by making the number of stator pole pairs independent of the number of rotor pole pairs.
US08749103B2 Permanent magnet rotor for electric machine
A permanent magnet rotor assembly for an electric machine includes a rotor core including one or more axially-extending openings and one or more permanent magnets located in the one or more axially-extending openings defining one or more gaps between the one or more permanent magnets and the one or more axially-extending openings. One or more thermally-conductive bars are located in the one or more gaps to transfer thermal energy from an interior of the rotor assembly toward an axial end of the rotor assembly.
US08749100B2 Overvoltage suppressing device
In some embodiments, a method is disclosed that includes measuring a waveform of a power source side voltage of a circuit breaker; measuring a waveform of a transmission line side voltage of the circuit breaker; calculating a waveform of a voltage between contacts of the circuit breaker that is a difference between the waveform of the power source side voltage and the waveform of the transmission line side voltage; calculating a waveform of an absolute value of the waveform of the voltage between contacts; extracting a waveform of a component in a frequency band which is lower than a frequency of the power source and higher than a frequency of a DC component from the waveform of the absolute value; detecting a cycle of the extracted waveform; and closing the circuit breaker based on the cycle.
US08749097B2 System and method for controlling power transfer across an inductive power coupling
A signal transfer system for controlling power transfer across an inductive power coupling. A transmission circuit associated with an inductive power receiver is configured to transmit a control signal to a reception circuit associated with an inductive power outlet. The transmission circuit includes an ancillary load and a switching unit for modulating power drawn by a secondary inductive coil according to the control signal. The reception circuit is configured to monitor power provided to a primary inductive coil thereby detecting the modulated control signal. The signal transfer system may be used to regulate the power supplied by the inductive coupling and to detect the presence of the secondary coil.
US08749094B2 Power supply, method, and computer program product for supplying electrical power to a load
A power supply adapted for supplying electrical power to a load (108), the power supply comprising: at least one powered full bridge circuit (100), wherein the powered full bridge circuit is adapted for being powered by a direct current voltage supply (106), wherein the full bridge circuit (100) comprises a first output connection (104a), and a first switching means (102a-102d) for controlling the application of electrical power to the output connection, at least one floating full bridge circuit (110), wherein each floating full bridge circuit comprises a capacitor (116) adapted for powering the floating full bridge circuit (110), wherein each floating full bridge circuit comprises a second output connection (114b), a second switching means (112a-112d) for controlling the application of electrical power to the output connection, a stack of bridge circuits (100, 110) comprising the at least one powered full bridge circuit and the at least one floating full bridge circuit, wherein the second output convection (114b) and first output connection (104a) are connected in series, wherein the stack has a third output connection (114a), a passive filter (120) for averaging the voltage across the third output connection (114a) and connected to the third output connection, a load connector (122a) adapted for connecting the passive filter (120) to the load (108), a modulator (124) adapted for modulating the first switching means and the second switching means such that the charging or discharging of the capacitor (116) is controlled while electrical power is being supplied to or extracted from the load (108).
US08749090B2 Dual source automotive propulsion system and method of operation
Automotive propulsion systems and methods of operation are provided. The automotive propulsion system includes a first voltage source, a power electronics device comprising a plurality of power switching devices coupled to the first voltage source, an electric motor having a plurality of windings coupled to the plurality of power switching devices and a neutral node interconnecting the plurality of windings, and a second voltage source coupled to the neutral node of the electric motor and the first voltage source.
US08749088B2 Methods and devices for generating electricity from high altitude wind sources
The invention discloses devices and methods for allowing access to higher altitude winds for the purpose of electricity generation. A plurality of zeppelins is placed at altitudes in excess of one kilometer, with winds passing through hollow cavities that include wind turbines as well as electrical generators. The zeppelins may be moved from a first height to a second height in order to make most efficient use of prevailing winds at higher altitudes.
US08749084B2 Wind turbine stand still load reduction
Methods and systems [are disclosed] for controlling wind turbines having a tower, a nacelle, and a rotor with a blade and hub. The wind turbine may further include a yaw drive system for rotating the nacelle relative to the tower about a substantially vertical axis, and/or a pitch drive system for rotating the blade of the rotor around a longitudinal axis of the blade. During high wind speeds when the wind turbine may be in a stand-still and non-power-producing situation, the yaw drive system may continuously or periodically rotate the nacelle to vary a direction of the rotor with respect to the wind. Further, the pitch drive system may continuously or periodically rotate the blade to vary a direction of the blade with respect to the wind. In this manner, the wind turbine may be safely controlled during high winds.
US08749083B2 Wind power generator
A wind power generator comprises a first power generator including a rotor arranged so as to be coaxial with a rotation shaft and generates electric power by the rotation of the rotor, a flywheel which is coaxial with the rotation shaft and arranged through a one-way clutch so that when the rotation shaft increases its speed, the flywheel is in an integrally rotating state with the rotation shaft, and when the rotation shaft reduces its speed, the flywheel is separated from the rotation shaft to rotate inertially, a second power generator including a rotor arranged so as to be coaxial with the flywheel and rotate integrally with the flywheel generates the electric power by the rotation of the rotor with the rotation of the flywheel, and an output portion which externally outputs any one of the electric powers generated by the first and second power generators.
US08749079B1 Integrated wankel expander-alternator
A compact Wankel expander-alternator combination is provided. The combination includes a stationary outer housing that has embedded stator coils and a rotating inner housing having corresponding magnets disposed around the housing with the magnet/coil interaction generating power. Within the rotating housing, a three-sided rotor turns within a two lobed Wankel cavity, powered by working fluid acting on the rotor. The rotating housing and the rotor each circumscribe a stationary shaft. The shaft has an eccentric lobe about which the rotor turns on a bearing disposed between the rotor and the lobe. The rotating housing turns on bearings supported by the stationary shaft. The rotor and rotating housing are linked so that as the rotor turns in response to the working fluid force, the housing turns at a higher speed the speed ratio being preselected to achieve the desired output energy.
US08749076B2 Resin paste composition
The present invention relates to a resin paste composition including an organic compound, and a granular aluminum powder having an average particle diameter of from 2 to 10 μm and a flake-shaped silver powder having an average particle diameter of from 1 to 5 μm which are uniformly dispersed in the organic compound, and a semiconductor device manufactured by bonding a semiconductor element onto a supporting member through the resin paste composition and then encapsulating the resulting bonded product. According to the present invention, it is possible to provide a resin paste composition used for bonding an element such as semiconductor chips onto a lead frame which is excellent in not only electrical conductivity and bonding property but also working efficiency without using a large amount of rare and expensive silver, and a semiconductor device having a high productivity and a high reliability.
US08749072B2 Semiconductor package with integrated selectively conductive film interposer
There are disclosed herein various implementations of semiconductor packages having a selectively conductive film interposer. In one such implementation, a semiconductor package includes a first active die having a first plurality of electrical connectors on a top surface of the first active die, a selectively conductive film interposer situated over the first active die, and a second active die having a second plurality of electrical connectors on a bottom surface of the second active die. The selectively conductive film interposer may be configured to serve as an interposer and to selectively couple at least one of the first plurality of electrical connectors to at least one of the second plurality of electrical connectors.
US08749069B2 Semiconductor device and method of fabricating the same
A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
US08749065B2 Semiconductor device comprising electromigration prevention film and manufacturing method thereof
A semiconductor device includes a semiconductor substrate, a plurality of wiring lines which are provided on one side of the semiconductor substrate and which have connection pad portions, and a plurality of columnar electrodes respectively provided on the connection pad portions of the wiring lines, each of the columnar electrodes including an outer peripheral surface and a top surface. An electromigration prevention film is provided on at least the surfaces of the wiring lines. A sealing film is provided around the outer periphery surfaces of the columnar electrodes.
US08749060B2 Method of semiconductor integrated circuit fabrication
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate. A patterned dielectric layer with a plurality of openings is formed on the substrate. A barrier layer is deposited in the openings by a first tool and a sacrificing protection layer is deposited on the barrier layer by the first tool. The sacrificing layer is removed and a metal layer is deposited on the barrier layer by a second tool.
US08749059B2 Semiconductor device having a copper plug
Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. There may also be a cap layer over the copper plug to protect it from oxidation. There may also be a dielectric layer over the cap layer.
US08749049B2 Chip package with a chip embedded in a wiring body
An electronic device is disclosed. The electronic device comprises at least one electronic chip and a package for the electronic chip. The package comprises a laminate substrate, wherein the electronic chip is attached on the laminate substrate. The laminate substrate comprises one or more conduction layers, one or more insulation layers and a plurality of pads formed in a conduction layer on the side of the laminate substrate opposite to the side connected to the electronic chip. Furthermore, the package comprises an insulation body formed around the electronic chip. Moreover, the package comprises a plurality of electrodes that extend through the insulation body. For each pad of the laminate substrate, wiring is formed in the one or more of conduction layers and in one or more vias passing through the one or more insulation layers for electrically connecting the pad with at least one of the electrodes. The package further comprises an interconnection body formed on the insulation body and the electronic chip. The interconnection body comprises a plurality of pads on the side of the interconnection body opposite to the side connected to the insulation body and the electronic chip and it also comprises wiring inside the interconnection body for electrical connections between the pads of the electronic chip, the electrodes and the pads of the interconnection body. A method for manufacturing the electronic device is also disclosed.
US08749048B2 Package structure
The present invention discloses a semiconductor device package structure with redistribution layer (RDL) and through silicon via (TSV) techniques. The package structure comprises an electronic element which includes an dielectric layer on a backside surface of the electronic element, a plurality of first conductive through vias across through the electronic element and the dielectric layer, and a plurality of conductive pads accompanying with the first conductive through vias on an active surface of the electronic element; a filler material disposed adjacent to the electronic element; a first redistribution layer disposed over the dielectric layer and the filler material, and connected to the first conductive through vias; a first protective layer disposed over the active surface of the electronic element, the conductive pads, and the filler material; and a second protective layer disposed over the redistribution layer, the dielectric layer, and the filler material.
US08749045B1 Metal ring techniques and configurations
Embodiments of the present disclosure provide an apparatus comprising a substrate layer, a metal ring structure disposed on the substrate layer, the metal ring structure having an opening defined therein, and a solder mask layer coupled to (i) the metal ring structure and (ii) the substrate layer through the opening defined in the metal ring structure, the solder mask layer having a solder mask opening defined therein, wherein an edge of solder mask material defining the solder mask opening overlaps a portion of the opening defined in the metal ring structure. Other embodiments may be described and/or claimed.
US08749042B2 Process for making a semiconductor system
Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device.
US08749040B2 Integrated circuit packaging system with package-on-package and method of manufacture thereof
A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; attaching a component over the base substrate; attaching a component interconnect to the base substrate and a perimeter of the component; mounting a stack device over the component; attaching a base exposed interconnect directly on the component and next to the component interconnect; and forming a base encapsulation over the base substrate, the component, and the component interconnect, the base exposed interconnect partially exposed from the base encapsulation.
US08749039B2 Semiconductor device having chip mounted on an interposer
A semiconductor device 100 includes: a first semiconductor package 10; a first interposer 12 having an upper surface on which the first semiconductor package 10 is mounted; a first molding resin 14 that is provided on the upper surface of the first interposer 12 and seals the first semiconductor package 10; a second semiconductor package 20 mounted on an upper surface of the first molding resin 14; a second interposer 22 on which the second semiconductor package 20 is mounted by flip chip bonding; and a second molding resin 40 that is provided on the upper surface of the first interposer 12 and seals the first molding resin 14, the second semiconductor package 20, and the second interposer 22. The second semiconductor package 20 is mounted, with a surface thereof opposite to another surface mounted on the second interposer 22 faced down, on the upper surface of the first molding resin 14 via an adhesive 30.
US08749037B1 Multi-access memory system and a method to manufacture the system
A multiple memory access system is disclosed. The system includes a first die disposed on a package substrate. A second die is stacked above the first die. The first die, the second die and the package substrate form a first package. An IC is placed within a close proximity of the first package where the first die communicates with the second die at a first data rate while the first die communicates with the IC at a second data rate. The first data rate is higher than the second data rate.
US08749036B2 Microchip with blocking apparatus and method of fabricating microchip
A microchip has a base die with a conductive interconnect and an isolation trench around at least a portion of the conductive interconnect, and a cap die secured to the base die. A seal, formed from a metal material, is positioned between the base die and the cap die to secure them together. The microchip also has a blocking apparatus, between the isolation trench and the metal seal, that at least in part prevents the metal material from contacting the interconnect.
US08749032B2 Integrated circuit with improved transmission line structure and electromagnetic shielding between radio frequency circuit paths
An integrated circuit is disclosed having through silicon vias spaced apart one from another and conductors, each coupled to one or more of the through silicon vias, the conductors in aggregate in use forming a segmented conductive plane maintained at a same potential and forming an electromagnetic shield.
US08749031B2 Semiconductor device, method for manufacturing same, and semiconductor apparatus
According to one embodiment, a semiconductor device includes a semiconductor device body and an insulating adhesive layer. The semiconductor device body is formed with a square plate shape and has an element portion provided on a first major surface. The insulating adhesive layer is provided to cover a second major surface of the semiconductor device body and one or two of four side faces of the semiconductor device body.
US08749030B2 Surface morphology of non-polar gallium nitride containing substrates
Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about −0.6 degrees in a c-plane direction and up to about −20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.
US08749026B2 Nonplanar device with thinned lower body portion and method of fabrication
A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.
US08749025B2 Optoelectronic semiconductor chip, optoelectronic component and a method for producing an optoelectronic component
A semiconductor chip is specified that has a contact layer that is not optimum for many common applications. For example, the contact layer is too thin to tolerate an operating current intended for the semiconductor chip without considerable degradation. Also specified is an optoelectronic component in which the semiconductor chip can be integrated so that the suboptimal quality of the contact layer is compensated for. In the component the semiconductor chip is applied to a carrier body so that the contact layer is arranged on a side of the semiconductor body that is remote from the carrier body. The semiconductor chip and the carrier body are at least partly covered with an electrically isolating layer, and an electrical conductor applied to the isolating layer extends laterally away from the semiconductor body and contacts at least a partial surface of the contact layer. In addition, an advantageous process for producing the component is specified.
US08749024B2 Stacked ESD clamp with reduced variation in clamp voltage
An integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series is disclosed. Each bipolar transistor includes a breakdown inducing feature. The breakdown inducing features have reflection symmetry with respect to each other. A process for forming an integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series, with breakdown inducing features having reflection symmetry, is also disclosed.
US08749021B2 Voltage regulator integrated with semiconductor chip
The present invention reveals a semiconductor chip structure and its application circuit network, wherein the switching voltage regulator or converter is integrated with a semiconductor chip by chip fabrication methods, so that the semiconductor chip has the ability to regulate voltage within a specific voltage range. Therefore, when many electrical devices of different working voltages are placed on a Printed Circuit Board (PCB), only a certain number of semiconductor chips need to be constructed. Originally, in order to account for the different demands in voltage, power supply units of different output voltages, or a variety of voltage regulators need to be added. However, using the built-in voltage regulator or converter, the voltage range can be immediately adjusted to that which is needed. This improvement allows for easier control of electrical devices of different working voltages and decreases response time of electrical devices.
US08749020B2 Metal e-fuse structure design
An integrated circuit structure is provided. The integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a metal fuse in the dielectric layer; a dummy pattern adjacent the metal fuse; and a metal line in the dielectric layer, wherein a thickness of the metal fuse is substantially less than a thickness of the metal line.
US08749018B2 Integrated semiconductor device having an insulating structure and a manufacturing method
An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second semiconductor region, a first well and at least one second well of the first conductivity type arranged on the non-monocrystalline semiconductor layer and an insulating structure insulating the first well from the at least one second well and the non-monocrystalline semiconductor layer. Further, a method for forming a semiconductor device is provided.
US08749017B2 Semiconductor device
Aspects of the invention are related to a semiconductor device including a first conductivity type n-type drift layer, a second conductivity type VLD region which is formed on a chip inner circumferential side of a termination structure region provided on one principal surface of the n-type drift layer and which is higher in concentration than the n-type drift layer, and a second conductivity type first clip layer which is formed on a chip outer circumferential side of the VLD region so as to be separated from the VLD region and which is higher in concentration than the n-type drift layer. The invention can also include a first conductivity type channel stopper layer which is formed on a chip outer circumferential side of the first clip layer so as to be separated from the first clip layer and which is higher in concentration than the n-type drift layer.
US08749016B2 High voltage MOS device and method for making the same
A high-voltage metal-oxide-semiconductor (HVMOS) device may include a source, a drain, a gate positioned proximate to the source, a drift region disposed substantially between the drain and a region of the gate and the source, and a self shielding region disposed proximate to the drain. A corresponding method is also provided.
US08749015B2 Method and system for fabricating floating guard rings in GaN materials
A method for fabricating an edge termination structure includes providing a substrate having a first surface and a second surface and a first conductivity type, forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate, and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The method also includes implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer. The method further includes forming an active device coupled to the second region of the second GaN epitaxial layer and forming the edge termination structure coupled to the third region of the second GaN epitaxial layer.
US08749013B2 Sensor and method for its production
A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm.
US08749012B2 Methods and structures for discharging plasma formed during the fabrication of semiconductor device
Methods and structures for discharging plasma formed during the fabrication of semiconductor device are disclosed. The semiconductor device includes a wordline, a common ground line and a fuse structure for electrically coupling the wordline and the common ground line until a break signal is applied via the fuse structure.
US08749011B2 System and method for reducing voltage drops in integrated circuits
In one embodiment, a die arrangement is disclosed in which a wire-bond pad may be operatively coupled to a power supply via a wire bond. A first pad may be operatively coupled to the wire-bond pad. A second pad may be operatively coupled to the first pad via a redistribution layer.
US08749003B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous Co40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
US08749002B2 Structure and method form air cavity packaging
A structure and method for air cavity packaging, the structure comprises a carrier having plural die pads and leads, plural dies, plural wires, plural walls, and a lid. The dies are mounted on the die pads. The wires electrically connect the dies to the leads. The plural walls are disposed on the carrier and form plural cavities in a way that each cavity contains at least one die pad and plural leads, and each wall is provided with at least one air vent for exhausting air to the outside. The lid is attached on the plural walls via an adhesive agent to seal the plural air cavities, so that the plural connected air cavity packages are formed.
US08748997B2 Contact-force sensor package and method of fabricating the same
Provided are a contact-force sensor package and a method of fabricating the same. The contact-force sensor package includes an elastic layer comprising a side that contacts a source of a contact-force; and a substrate layer adhered to the opposing side of the elastic layer from the side that contacts the source of the contact-force and comprising a cantilever beam separated from the elastic layer and deformed due to the contact-force, a pillar extending from a free end portion of the cantilever beam to the elastic layer and transferring the contact-force from the elastic layer to the cantilever beam, and a deformation sensing element for generating an electrical signal that is proportional to a degree of deformation of the cantilever beam.
US08748995B2 Nitride semiconductor device with metal layer formed on active region and coupled with electrode interconnect
A nitride semiconductor device includes a nitride semiconductor multilayer including an active region, and first and second electrodes, each having a finger-like structure and formed on the active region to be spaced from each other. A first electrode interconnect is formed on the first electrode. A second electrode interconnect is formed on the second electrode. A second insulating film is formed to cover the first and second electrode interconnects. A first metal layer is formed on the second insulating film. The first metal layer is formed above the active region with the second insulating film interposed therebetween, and is coupled to the first electrode interconnect.
US08748991B2 Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices
A high-k metal gate stack and structures for CMOS devices and a method for forming the devices. The gate stack includes a high-k dielectric having a high dielectric constant greater than approximately 3.9, a germanium (Ge) material layer interfacing with the high-k dielectric, and a conductive electrode layer disposed above the high-k dielectric or the Ge material layer. The gate stack optimizes a shift of the flatband voltage or the threshold voltage to obtain high performance in p-FET devices.
US08748989B2 Fin field effect transistors
The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a major surface; a plurality of first trenches having a first width and extending downward from the substrate major surface to a first height, wherein a first space between adjacent first trenches defines a first fin; and a plurality of second trenches having a second width less than first width and extending downward from the substrate major surface to a second height greater than the first height, wherein a second space between adjacent second trenches defines a second fin.
US08748983B2 Embedded source/drain MOS transistor
An embedded source/drain MOS transistor and a formation method thereof are provided. The embedded source/drain MOS transistor comprises: a semiconductor substrate; a gate structure on the semiconductor substrate; and a source/drain stack embedded in the semiconductor substrate at both sides of the gate structure with an upper surface of the source/drain stack being exposed, wherein the source/drain stack comprises a dielectric layer and a semiconductor layer above the dielectric layer. The present invention can cut off the path for the leakage current from the source region and the drain region to the semiconductor substrate, thereby reducing the leakage current from the source region and the drain region to the semiconductor substrate.
US08748980B2 U-shape RESURF MOSFET devices and associated methods of manufacturing
The present technology discloses a U-shape RESURF MOSFET device. Wherein the MOSFET device comprises a drain having a drain contact region and a drift region, a source, a body, a gate and a recessed-FOX structure. Wherein the recessed-FOX structure is between the gate and the drift region vertically and between the body and the drain contact region laterally, and wherein the recessed-FOX structure is configured to make the drift region into a U shape. The present technology further discloses the depth of the drift region is controlled by adjusting a layout width.
US08748978B2 Sense-amp transistor of semiconductor device and method for manufacturing the same
A sense-amp transistor for a semiconductor device and a method for manufacturing the same are disclosed. A sense-amp transistor for a semiconductor device includes a recess array formed in a gate region of a sense-amp, a plurality of buried gates formed in each recess of the recess array so as to form a vertical channel region, and an upper gate configured to form a horizontal channel region in an active region between the buried gates. As a result, the number of additional processes is minimized, and the sensing margin of the sense-amp is guaranteed.
US08748974B2 Power semiconductor device and a method for forming a semiconductor device
A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.
US08748968B2 Method of forming nano dots, method of fabricating the memory device including the same, charge trap layer including the nano dots and memory device including the same
Provided are a method of forming nano dots, method of fabricating a memory device including the same, charge trap layer including the nano dots and memory device including the same. The method of forming the nano dots may include forming cores, coating surfaces of the cores with a polymer, and forming graphene layers covering the surfaces of the cores by thermally treating the cores coated with the polymer. Also, the cores may be removed after forming the graphene layers. In addition, the surfaces of the cores may be coated with a graphitization catalyst material before coating the cores with the polymer. Also, the cores may include metal particles that trap charges and may also function as a graphitization catalyst.
US08748962B2 Semiconductor device and method of manufacturing the same
A semiconductor device includes a capacitor dielectric film formed on a lower electrode and made of a ferroelectric material, and an upper electrode formed on a capacitor dielectric film, wherein the lower electrode includes a lowest conductive layer and an upper conductive layer, the lowest conductive layer being made of a noble metal other than iridium, and the upper conductive layer being formed on the lowest conductive layer and made of a conductive material, which is different from a material for the lowest conductive layer, and which is other than platinum.
US08748951B2 Solid-state image sensing device
A solid-state image sensing device has a unit pixel containing a photoelectric conversion element for detecting a light to generate photoelectrons and pixel drive circuits for driving the unit pixel. The photoelectric conversion element has a photogate structure, and the pixel drive circuits apply a voltage selected from three voltages to the photogate of the photoelectric conversion element to generate or transfer the photoelectrons. The three voltages include at least a first voltage, a second voltage higher than the first voltage, and a third voltage higher than the first voltage and lower than the second voltage.
US08748949B2 Chip package with heavily doped region and fabrication method thereof
The invention provides a chip package and fabrication method thereof. In one embodiment, the chip package includes: a semiconductor substrate having opposite first and second surfaces, at least one bond pad region and at least one device region; a plurality of conductive pad structures disposed on the bond pad region at the first surface of the semiconductor substrate; a plurality of heavily doped regions isolated from one another, underlying and electrically connected to the conductive pad structures; and a plurality of conductive bumps underlying the heavily doped regions and electrically connected to the conductive pad structures through the heavily-doped regions.
US08748946B2 Isolated wire bond in integrated electrical components
An electrical component includes a semiconductor layer having a first conductivity type and a interconnect layer disposed adjacent to a frontside of the semiconductor layer. At least one bond pad is disposed in the interconnect layer and formed adjacent to the frontside of the semiconductor layer. An opening formed from the backside of the semiconductor layer and through the semiconductor layer exposes at least a portion of the bond pad. A first region having a second conductivity type extends from the backside of the semiconductor layer to the frontside of the semiconductor layer and surrounds the opening. The first region can abut a perimeter of the opening or alternatively, a second region having the first conductivity type can be disposed between the first region and a perimeter of the opening.
US08748945B2 Image sensors including a gate electrode surrounding a floating diffusion region
Image sensors are provided. The image sensors may include first and second stacked impurity regions having different conductivity types. The image sensors may also include a floating diffusion region in the first impurity region. The image sensors may further include a transfer gate electrode surrounding the floating diffusion region in the first impurity region. Also, the transfer gate electrode and the floating diffusion region may overlap the second impurity region.
US08748943B2 Bipolar junction transistor with stair profile
A semiconductor device and a method of forming a structure in a target substrate for manufacturing a semiconductor device is provided. The method comprises the step of providing a masking layer on the target substrate and providing a stair-like profile in the masking layer such that the height of a step of the stair-like profile is smaller than the thickness of the masking layer. Further, the method comprises the step of performing anisotropic etching of the masking layer and the target substrate simultaneously such that a structure having a stair-like profile is formed in the target substrate. The semiconductor device comprises a target substrate including a first region made of a first type of semiconductor material and a second region made of a second type of semiconductor material.
US08748940B1 Semiconductor devices with germanium-rich active layers and doped transition layers
Semiconductor device stacks and devices made there from having Ge-rich device layers. A Ge-rich device layer is disposed above a substrate, with a p-type doped Ge etch suppression layer (e.g., p-type SiGe) disposed there between to suppress etch of the Ge-rich device layer during removal of a sacrificial semiconductor layer richer in Si than the device layer. Rates of dissolution of Ge in wet etchants, such as aqueous hydroxide chemistries, may be dramatically decreased with the introduction of a buried p-type doped semiconductor layer into a semiconductor film stack, improving selectivity of etchant to the Ge-rich device layers.
US08748936B2 Methods and structures for electrostatic discharge protection
A semiconductor device includes a first well region of a first conductivity type, a second well region of a second conductive type within the first well region. A first region of the first conductivity type and a second region of the second conductivity type are disposed within the second well region. A third region of the first conductivity type and a fourth region of the second conductivity type are disposed within the first well region, wherein the third region and the fourth region are separated by the second well region. The semiconductor device also includes a switch device coupled to the third region.
US08748934B2 Vertical selection transistor, memory cell, and three-dimensional memory array structure and method for fabricating the same
The present disclosure discloses a vertical selection transistor, a memory cell having the vertical selection transistor, a three-dimensional memory array structure and a method for fabricating the three-dimensional memory array structure. The vertical selection transistor comprises: an upper electrode; a lower electrode; a first semiconductor layer, a second semiconductor layer, a third semiconductor layer and a fourth semiconductor layer vertically stacked between the lower electrode and the upper electrode; and a gate stack formed on a side of the second semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are first type doped layers, the second semiconductor layer and the fourth semiconductor layer are second type doped layers, and a doping concentration of the second semiconductor layer is lower than that of the first semiconductor layer or that of the third semiconductor layer respectively.
US08748933B2 Nanocrystals including III-V semiconductors
Semiconductor nanocrystals including III-V semiconductors can include a core including III-V alloy. The nanocrystal can include an overcoating including a II-VI semiconductor.
US08748932B2 Light emitting device having curved top surface with fine unevenness
Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type semiconductor layer, a light emitting layer over the first conductive type semiconductor layer, an electron blocking layer over the light emitting layer, and a second conductive type semiconductor layer over the electron blocking layer. The electron blocking layer comprises a pattern having a height difference.
US08748925B2 Plate
A plate including a substrate, a metal reflection layer and an oxidation protection layer is provided. The substrate has a first surface and a second surface opposite to the first surface. The metal reflection layer is disposed on the first surface of the substrate. The oxidation protection layer covers the metal reflection layer. The metal reflection layer is disposed between the oxidation protection layer and the first surface of the substrate. At least one light emitting diode chip is adapted to eutectic bonding on the plate.
US08748918B2 Semiconductor device and optical print head
A semiconductor device includes a diamond-like carbon film formed on the substrate. A thin film is formed on the diamond-like carbon film. The thin film has a thickness thinner than the diamond-like carbon. A semiconductor thin film having a semiconductor element is bonded onto the thin film.
US08748916B2 Light emitting device
A light emitting device includes a conductive substrate, a plurality of light emitting cells disposed on the conductive substrate, wherein each of the plurality of light emitting device cells includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, a protective layer disposed to cover a side of the first semiconductor layer and a side of the active layer, and a first electrode for connecting the second semiconductor layers of more than one of the light emitting cells to each other, wherein the protective layer includes protruding portions extending to an inside of each of the light emitting cells from the side of the first semiconductor layer and the side of the active layer.
US08748913B2 Light emitting diode module
An LED module includes a base, a circuit layer formed on the base and multiple LEDs each having an LED die connecting to the circuit layer. The circuit layer includes multiple connecting sections. Each connecting section includes a first connecting part and a second connecting part electrically insulating and spaced from each other. Each LED includes an electrode layer having a first section and a second section electrically insulated from the first section and respectively electrically connecting the first and second connecting parts of a corresponding connecting section. The LED die is electrically connected to the second section. A transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. An electrically insulating layer is located between the LED die and surrounding the LED die except where the transparent electrically conductive layer connects.
US08748912B2 Common optical element for an array of phosphor converted light emitting devices
A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.
US08748911B2 Stable light source
Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged.
US08748907B2 Optical coupling device
According to one embodiment, a semiconductor device includes an input lead, a light emitting element, an output lead, a light receiving element and a resin molded body. The input lead includes an input inner lead portion, an input outer lead portion and a first silver layer. The light emitting element is provided on the first silver layer. The output lead includes an output inner lead portion, an output outer lead portion and a second silver layer. The second silver layer includes an upper surface portion and a side surface portion. The light receiving element is provided on the second silver layer and is capable of receiving light. The output lead includes a cutting surface extending from the side surface portion of the second silver layer to the side surface of the output inner lead portion. The resin molded body covers the cutting surface.
US08748905B2 High efficacy semiconductor light emitting devices employing remote phosphor configurations
A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 230 lumens per watt.
US08748904B2 Low loss nano-aperture
Low loss optical apertures are provided. A silicon intermediate layer sandwiched between a metal aperture layer and a dielectric layer has been found to offer a good combination of low optical loss combined with superior mechanical properties.
US08748899B2 Nitride-based semiconductor device and method for fabricating the same
A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure 20 with a p-type semiconductor region, of which the surface 12 defines a tilt angle of one to five degrees with respect to an m plane, and an electrode 30, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x≧0, y≧0 and z≧0) semiconductor layer 26. The electrode 30 includes an Mg layer 32, which is in contact with the surface 12 of the p-type semiconductor region, and a metal layer 34 formed on the Mg layer 32. The metal layer 34 is formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.
US08748898B2 Semiconductor device and manufacturing method thereof
A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TFT (pixel TFT) 304 forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.
US08748897B2 Array substrate for organic electroluminescent display device
An array substrate for an organic electroluminescent display device includes a substrate including a display area and a non-display area; a gate line and a data line; a thin film transistor including a semiconductor layer of polycrystalline silicon, a gate insulating layer, a gate electrode, an inter insulating layer, a source electrode, and a drain electrode; auxiliary lines formed of a same material and on a same layer as the data line; a passivation layer of organic insulating material and including a drain contact hole exposing the drain electrode, and an auxiliary line contact hole exposing one of the auxiliary lines; and a first electrode and a line connection pattern on the passivation layer, wherein the first electrode contacts the drain electrode and the line connection pattern contacts the one of the first auxiliary pattern.
US08748894B2 Composition of organic insulating layer and thin film transistor substrate and display device using the same
Discussed is a composition of an organic insulating layer comprising a photosensitizer, a binder, an additive and a solvent, wherein the photosensitizer includes a photoacid generator (PAG), and a thin film transistor substrate and display device using the same, wherein the composition of the present invention enables to realize a simplified process by omitting an additional entire-surface exposing process for a color change, and a baking process after an exposing process; and to minimize a problem of color-coordinates shift by realizing a good light transmittance.
US08748893B2 Array substrate for liquid crystal display device and method of fabricating the same
An array substrate for a liquid crystal display device includes a gate line on a substrate; a gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode and including a gate opening; an active layer on the gate insulating layer and overlapping the gate electrode; an ohmic contact layer on the active layer; a source electrode on the ohmic contact layer; a drain electrode on the ohmic contact layer and spaced apart from the source electrode, wherein one end of the drain electrode is disposed in the gate opening; a data line on the gate insulating layer and connected to the source electrode, the data line crossing the gate line; a passivation layer on the data line and the source and drain electrodes and including a pixel opening, wherein the pixel opening exposes the drain electrode in the gate opening and a portion of the gate insulating layer; and a pixel electrode on the gate insulating layer and in the pixel opening, the pixel electrode contacting the one end of the drain electrode in the gate opening.
US08748892B2 Thin film transistor and method for fabricating the same
The present invention relates to a thin-film transistor in a liquid crystal display device and a method of fabricating the same, and the thin-film transistor may be configured by including a first gate electrode formed on an insulating substrate; a first gate insulation film formed on the insulating substrate including the first gate electrode; an active layer formed on the first gate insulation film; source/drain electrodes formed on the active layer and arranged at both sides of the first gate electrode; a second gate insulation film formed on the active layer and the first gate insulation film including the source/drain electrodes and provided with a contact hole for exposing part of the drain electrode; a second gate electrode overlapped with the first gate electrode on the second gate insulation film; and a pixel electrode electrically connected to the drain electrode through the contact hole.
US08748891B2 Manufacturing process of liquid crystal display device, and liquid crystal display device
A manufacturing process of an LCD device of the invention includes forming a first substrate provided with a pixel part with thin film transistors and a seal portion arranged around the pixel part, forming a second substrate opposed to the first substrate, filling a liquid crystal layer between the first substrate and the second substrate, and adhering the first substrate to the second substrate with a sealant provided for the seal portion, wherein the forming the first substrate includes forming a semiconductor layer composing the thin film transistor, forming in the seal portion a semiconductor connection layer made of a same material as the semiconductor layer, and forming an organic interlayer insulating film, wherein the forming the semiconductor layer and the forming the semiconductor connection layer are performed in the same step.
US08748889B2 Semiconductor device and method of manufacturing the same
It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
US08748887B2 Semiconductor device and method for manufacturing the same
An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
US08748881B2 Semiconductor device
An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.
US08748880B2 Semiconductor device with oxide semiconductor
Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.
US08748876B2 Light-emitting element, light-emitting module, light-emitting panel, and light-emitting device
A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.
US08748874B2 Protein photoelectric conversion device, photoelectric conversion system, protein photoelectric conversion device manufacturing method, photoelectric conversion system manufacturing method and protein-immobilized electrode
A protein photoelectric conversion device including a gold electrode; and a substance selected from the group consisting of a metal-substituted cytochrome b562, a zinc chlorin cytochrome b562, a derivative thereof, and a variant thereof immobilized on the gold electrode.
US08748870B2 Methods of forming structures having nanotubes extending between opposing electrodes and structures including same
A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed.
US08748868B2 Nitride semiconductor light emitting device and epitaxial substrate
For a nitride semiconductor light emitting device, a c-axis vector of hexagonal GaN of a support substrate is inclined to an X-axis direction with respect to a normal axis Nx normal to a primary surface. In a semiconductor region an active layer, a first gallium nitride-based semiconductor layer, an electron block layer, and a second gallium nitride-based semiconductor layer are arranged along the normal axis on the primary surface of the support substrate. A p-type cladding layer is comprised of AlGaN, and the electron block layer is comprised of AlGaN. The electron block layer is subject to tensile strain in the X-axis direction. The first gallium nitride-based semiconductor layer is subject to compressive strain in the X-axis direction. The misfit dislocation density at an interface is smaller than that at an interface. A barrier to electrons at the interface is raised by piezoelectric polarization.
US08748858B2 Optical detection device for detecting the position of an object by using emission current control information
A processing device includes a control section adapted to perform emission control of first and second light source sections based on a light reception result of a light receiving section adapted to receive a reflected light beam caused by an object reflecting irradiation light beams from the first and second light source sections, and a determination section adapted to determine a positional relationship of the object with respect to the first and second light source sections based on emission current control information for performing the emission control. The determination section determines the positional relationship of the object based on first period emission current control information as the emission current control information in a first period in which no object exists in the detection area and second period emission current control information as the emission current control information in a second period in which the object exists in the detection area.
US08748854B2 Laser produced plasma EUV light source
Methods and apparatus for producing EUV from plasma are disclosed. The apparatus includes a plasma generating system comprising a source of target material droplets and a laser producing a beam irradiating the droplets at an irradiation region. The plasma produces EUV radiation, wherein the droplet source comprises a nozzle having an orifice configured for ejecting a fluid and a sub-system having an electro-actuable element producing a disturbance in the fluid to cause at least some of the droplets to coalesce prior to being irradiated. The electro-actuable element is coupled to nozzle using an adhesive that has a high modulus at the nozzle operating temperature. Improvements also include tuning the nozzle assembly to more closely match the modulation waveform frequency with one of the resonance frequencies of the nozzle assembly by optimizing one of a mass, a shape, or material composition of at least one component in the nozzle assembly.
US08748853B2 Chamber apparatus
A chamber apparatus for operating with a laser apparatus includes a chamber, a target supply unit, a collection unit and a collection container. The chamber includes an inlet through which a laser beam from the laser apparatus enters the chamber. The target supply unit is configured to supply a target material to a predetermined region inside the chamber. The collection unit includes a debris entering surface so that debris generated when the target material is irradiated with the laser beam enters the debris entering surface. The debris entering surface is inclined with respect to a direction in which the debris enters the debris entering surface. The collection container collects the debris flowing out of the collection unit.
US08748851B2 Material aging apparatus
An aging apparatus including a pulse laser, a beam expansion assembly, and a platform configured to carry an object is provided. The pulse laser transmits a first beam to the beam expansion assembly. The beam expansion assembly expands the first beam to a second beam and projects the second beam onto the object.
US08748850B2 Energy application device and energy application method
An energy application device applies optical energy on an adhesion sheet by a light radiator and, subsequently, applies heat energy on the adhesion sheet by a heater. With this arrangement, even the adhesion sheet, which includes an adhesive layer having an energy barrier that cannot be overcome only with optical energy, is enabled to start a photoreaction by overcoming an energy barrier with the heat energy from the heater.
US08748848B1 Method of generating raman laser for inducing fluorescence of fluoranthene and a system thereof
A method of generating Raman laser for inducing fluorescence of fluoranthene and a system thereof is disclosed. The system comprising a pulsed laser, a frequency doubling crystal, a frequency quadrupling crystal, a light filter unit, a quarter-wave plate, a Raman cell filled with deuterium gas( ), a light dispersion device and an optical diaphragm. The method of the present invention comprises the steps of emitting a laser beam pulse through the crystals as mentioned above such that a mixture of lasers is generated. The light filter unit and the quarter-wave plate are used to obtain a circular or ellipsometric polarized pump laser from the mixture of lasers. Finally, the Raman laser is obtained by directing the pump laser into a Raman cell filled with deuterium gas, extracting different orders of stimulated Raman scattering lasers emitted from the Raman cell by the light dispersion device and selecting the desired order of stimulated Raman scattering laser by the optical diaphragm.
US08748843B2 Charged particle beam drawing apparatus and charged particle beam drawing method
A charged particle beam drawing apparatus of an embodiment includes: a drawing unit to perform drawing on a workpiece on a stage by using a charged particle beam; multiple marks located on the stage and having different heights; an irradiation position detector to, when any of the marks is irradiated with the charged particle beam, detect an irradiation position of the charged particle beam on a mark surface of the mark; a drift-amount calculation unit to calculate a drift amount of the charged particle beam on the mark surface by using the irradiation position; a drift-amount processing unit to obtain a drift amount on a workpiece surface by using the drift amounts on at least two of the mark surfaces; and a drawing controller to correct an is irradiation position of the charged particle beam by using the drift amount on the workpiece surface.
US08748842B2 Electrostatic lens array
Provided is an electrostatic lens array, including multiple substrates arranged with intervals, each of the multiple substrates having an aperture for passing a charged particle beam, in which: in a travelling direction of the charged particle beam, a peripheral contour line formed by any one of surfaces of the multiple substrates other than an upper surface of a most upstream substrate and a lower surface of a most downstream substrate has a protruding portion protruding from a peripheral contour line of one of the upper surface of the most upstream substrate and the lower surface of the most downstream substrate; and a position of the protruding portion is defined by a position regulating member, whereby parallelism is adjustable so that a surface including the protruding portion is parallel to a surface to be irradiated with the charged particle beam after passing through the aperture.
US08748834B2 Radiographic image capture system and method
A radiographic image capture system includes: a radiographic image capture section, an output section and a generation section. The radiographic image capture section has plural radiographic imaging devices are placed adjacent to each other in a predetermined direction. Each of the radiographic imaging devices independently performs an imaging action, a preparatory action that is performed before the imaging action, and a transition action in which the radiographic imaging device transitions, in response to a transition command, from a first state in which the radiographic imaging device performs the preparatory action to a second state in which the radiographic imaging device performs the imaging action. The output section outputs the transition command to the plurality of radiographic imaging devices when imaging condition data has been input. The generation section combines image data acquired by the radiographic imaging devices and generates elongated image data representing an elongated radiographic image.
US08748833B2 Radiation detector system and method
A radiation detector dosimeter system/method implementing a corrected energy response detector is disclosed. The system incorporates charged (typically tungsten impregnated) injection molded plastic that may be formed into arbitrary detector configurations to affect radiation detection and dose rate functionality at a drastically reduced cost compared to the prior art, while simultaneously permitting the radiation detectors to compensate for radiation intensity and provide accurate radiation dose rate measurements. Various preferred system embodiments include configurations in which the energy response of the detector is nominally isotropic, allowing the detector to be utilized within a wide range of application orientations. The method incorporates utilization of a radiation detector so configured to compensate for radiation counts and generate accurate radiation dosing rate measurements.
US08748828B2 Interposer based imaging sensor for high-speed image acquisition and inspection systems
The present invention includes an interposer disposed on a surface of a substrate, a light sensing array sensor disposed on the interposer, the light sensing array sensor being back-thinned and configured for back illumination, the light sensing array sensor including columns of pixels, one or more amplification circuitry elements configured to amplify an output of the light sensing array sensor, the amplification circuits being operatively connected to the interposer, one or more analog-to-digital conversion circuitry elements configured to convert an output of the light sensing array sensor to a digital signal, the ADC circuitry elements being operatively connected to the interposer, one or more driver circuitry elements configured to drive a clock or control signal of the array sensor, the interposer configured to electrically couple at least two of the light sensing array sensor, the amplification circuits, the conversion circuits, the driver circuits, or one or more additional circuits.
US08748826B2 Radioimaging methods using teboroxime and thallium
A method for imaging is providing, including administering a teboroxime species to an adult human subject, administering TI-201-thallous chloride to the subject, performing a teboroxime species SPECT imaging procedure of the teboroxime species on a region of interest (ROI) of the subject, and, after administering the teboroxime species, performing a TI-201-thallous chloride SPECT imaging procedure of the TI-201-thallous chloride on the ROI. Administering the teboroxime species and the TI-201-thallous chloride and performing the teboroxime species and the TI-201-thallous chloride SPECT imaging procedures comprise administering the teboroxime species and the TI-201-thallous chloride and performing the teboroxime species and the TI-201-thallous chloride SPECT imaging procedures during a time period having a duration of no more than 30 minutes. Other embodiments are also described.
US08748825B2 Method and apparatus for emission guided radiation therapy
An apparatus comprising a radiation source, coincident positron emission detectors configured to detect coincident positron annihilation emissions originating within a coordinate system, and a controller coupled to the radiation source and the coincident positron emission detectors, the controller configured to identify coincident positron annihilation emission paths intersecting one or more volumes in the coordinate system and align the radiation source along an identified coincident positron annihilation emission path.
US08748819B2 Transmission electron microscopy system and method of operating a transmission electron microscopy system
A transmission electron microscopy system has an illumination system and an objective lens system. A first projection system images the diffraction plane of the objective lens system into a first intermediate diffraction plane. A second projection system images the first intermediate diffraction plane into a second intermediate diffraction plane. A first aperture located in the first intermediate diffraction plane has a central opening of a first radius. A bright field detector located in the second intermediate diffraction plane has a detection surface defined by an inner edge of a second radius. The first radius and the second radius define a maximum angle and a minimum angle, respectively, relative to the optical axis of directions of bright field electrons traversing the sample plane and detectable by the bright field detector.
US08748818B2 Incoherent transmission electron microscopy
A transmission electron microscope includes an electron beam source to generate an electron beam. Beam optics are provided to converge the electron beam. An aberration corrector corrects the electron beam for at least a spherical aberration. A specimen holder is provided to hold a specimen in the path of the electron beam. A detector is used to detect the electron beam transmitted through the specimen. The transmission electron microscope may operate in an incoherent mode and may be used to locate a sequence of objects on a molecule.
US08748817B2 Orientation imaging using wide angle convergent beam diffraction in transmission electron microscopy
Methods of orientation imaging microscopy (OIM) techniques generally performed using transmission electron microscopy (TEM) for nanomaterials using dynamical theory is presented. Methods disclosed may use a wide angle convergent beam electron diffraction for performing OIM by generating a diffraction pattern having at least three diffraction discs that may provide additional information that is not available otherwise.
US08748812B2 Detectors and ion sources
A field asymmetric ion mobility spectrometer (FAIMS) has an analyte ion source assembly by which an analyte substance is ionized and supplied to the inlet of the spectrometer. The ion source assembly has an upstream source of clean, dry air and two ion sources of opposite polarity arranged at the same distance along the flow path. The ion sources are arranged so that the overall charge of the plasma produced is substantially neutral. The analyte substance is admitted via an inlet downstream of the ion sources and flows into a reaction region of enlarged cross section to slow the flow and increase the time for which the analyte molecules are exposed to the plasma.
US08748805B2 Polarization diversity detector with birefringent diversity element
A polarization diversity detector includes at least one optical fiber having a first end for receiving a beam of light and a second end for transmitting the beam of light. A collimator receives the beam of the light from the optical fiber and outputs a collimated beam. A polarization diversity element includes a birefringent material which is positioned for receiving the collimated beam and resolving the collimated beam into a first beam having a first polarization and a second beam having a second polarization different from the first polarization. The first beam and second beam are angled relative to one another. At least one photodetector array pair includes a first photodetector array positioned to receive the first beam and a second photodetector array positioned to receive the second beam.
US08748804B2 Optical pushbutton or switch
An optical operating element comprises a light-emitting transmitter, an optical receiver, a prism, and a cover. The prism has a side surface that is an active sensor area, and the prism is arranged below the cover such that the active sensor area is oriented substantially parallel to the underside of the cover. The cover has a sensor region which is above the active sensor area and which has a transmittance of at most 99%, at most 95%, at most 90%, at most 80% or at most 50%. Light emitted by the transmitter is guided through the prism and passes through the active sensor area and the cover. The emitted light reflected at an object enters through the sensor region and the active sensor area and is guided through the prism to the receiver. A change in reflection is identified by an evaluation circuit and is interpreted as switching.
US08748802B2 Laser drawn electronics
Various aspects of the subject technology provide systems and methods for transmitting a radio frequency (RF) signal from a desired location on the surface of a photoconversion material by simply directing a laser beam or other energy beam to the desired location on the photoconversion material. In one aspect, the laser beam causes electrons in the photoconversion material to accelerate and emit the RF signal by forming a dead region on the photoconversion material that the electrons must flow around. In one aspect, the dead region has an asymmetrical shape to prevent a cancellation effect and produce a net positive RF signal. Various aspects of the subject technology also provide systems and methods for drawing a circuit element on the photoconversion material by tracing one or more dead regions on the photoconversion material with a laser beam or other energy beam to construct the circuit element.
US08748799B2 Full color single pixel including doublet or quadruplet si nanowires for image sensors
An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different color. The nanowires are functional to covert light of the colors they are sensitive to into electrical signals.
US08748798B2 Comparator circuit for reduced output variation
A comparator circuit for generating a signal representing a comparison of an input signal and a reference signal. In an embodiment, the comparator circuit includes a first stage and a second stage to provide respective signal amplification, where switch circuitry of the second stage switchedly couples respective elements of the first and second stages. The comparator circuit further includes a third stage to generate an output signal based on an intermediate signal of the second stage. In another embodiment, feedback circuitry of the comparator circuit is to selectively control a voltage of the output stage based on the output signal.
US08748795B2 Method for inspecting pattern defect and device for realizing the same
When using a CCD sensor as a photo-detector in a device for inspecting foreign matters and defects, it has a problem of causing electric noise while converting the signal charge, produced inside by photoelectric conversion, into voltage and reading it. Therefore, the weak detected signal obtained by detecting reflected and scattered light from small foreign matters and defects is buried in the electric noise, which has been an obstacle in detecting small foreign matters and defects. In order to solve the above problem, according to the present invention, an electron multiplying CCD sensor is used as a photo-detector. The electron multiplying CCD sensor is capable of enlarging signals brought about by inputted light relatively to the electric noise by multiplying the electrons produced through photoelectric conversion and reading them. Accordingly, compared to a conventional CCD sensor, it can detect weaker light and, therefore, smaller foreign matters and defects.
US08748794B2 Time-of-flight 3D imaging system comprising a detector for detecting electromagnetic radiation
A time-of-flight 3D imaging system comprising a detector for detecting electromagnetic radiation is constructed so that the detector includes a semiconductor substrate of a first doping type, and a well in the semiconductor substrate, the well being of a second doping type. The first doping type and the second doping type are different and the well has an increasing dopant concentration in a direction parallel to a surface of the semiconductor substrate. In addition, the detector includes a detector terminal doping region which is arranged at least partly in the well in a terminal region of the well. The detection of electromagnetic radiation is based on a generation of free charge carriers by the electromagnetic radiation in a detection region of the well. The detection region has a maximum dopant concentration which is lower than a maximum dopant concentration of the terminal region of the well.
US08748792B2 Photosensor and photosensor array with capacitive element
A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on.
US08748790B2 Proximity sensor using photosensor
Provided is a proximity sensor using a photosensor, which is easy to use and reduced in power consumption. In the proximity sensor, a first photosensor is used to detect a change in amount of ambient light entering the first photosensor, which is caused when a finger is coming close thereto, and a detection signal is output based on a result of the detection. The photosensor includes, for example, one or a plurality of PN junction elements connected in parallel.
US08748788B2 Beam power with multipoint reception
A beam power source transmits a signal indicating power availability, receives a request for power in response, and beams power in response to the request.
US08748781B2 Portable grilling apparatus
A portable grilling apparatus includes a power adapter having first and second receiving areas each configured to respectively receive a battery, the power adapter having circuitry for receiving electricity at the first and second receiving areas and producing a single electrical output. The apparatus includes a grill portion having a lower grill housing, a support element having a cooking surface for receiving food thereon, and an electrical heating element in the lower grill housing. The electrical heating element is positioned below the cooking surface and the electrical heating element is in electrical communication with the single electrical output circuitry. The apparatus includes a positioning portion operatively coupling the power adapter to the grill portion, the positioning portion having an attachment member for securement to an object.
US08748780B2 Substrate processing apparatus, substrate processing method, and computer-readable storage medium
A disclosed substrate processing apparatus comprises a heat exchange plate configured to heat and/or cool the substrate; plural protrusions provided on the heat exchange plate so as to allow the substrate to be placed on the plural protrusions, leaving a gap between the substrate and the heat exchange plate; a suction portion configured to attract the substrate onto the plural protrusion by suction through plural holes formed in the heat exchange plate; and a partition member that is provided on the heat exchange plate and lower than the plural protrusions, wherein the partition member is configured to divide the gap into two or more regions including at least one of the holes so that at least one of the two or more regions is two-dimensionally closed by the partition member.
US08748778B2 Stainless steel flux-cored welding wire for welding of zinc-coated steel sheet and arc welding method of zinc-coated steel sheet using same
A stainless steel flux-cored welding wire for zinc-coated steel sheet welding use which gives a weld zone where no zinc embrittlement cracking occurs and the corrosion resistance and ductility are excellent and which is good in weld work efficiency and a welding method using the same, the welding wire characterized in that total amounts of elements which are included as metals or alloy compositions in the sheath and flux are, by mass % with respect to a total mass of the welding wire, C: 0.01 to 0.05%, Si: 0.1 to 1.5%, Mn: 0.5 to 3.0%, Ni: 7.0 to 10.0%, and Cr: 26.0 to 30.0%, an F value is 30 to 50 in range, further, the wire contains, as slag forming agents, in the flux, by mass % with respect to the total mass of the wire, TiO2: 3.8 to 6.8%, SiO2: 1.8 to 3.2%, ZrO2: 1.3% or less, and Al2O3: 0.5% or less, a total amount of the slag forming agent and other slag forming agents is 7.5 to 10.5%, furthermore, the TiO2 satisfies, by mass % with respect to the total amount of slag forming agents, TiO2: 50 to 65%, and a balance of the sheath and flux is Fe and unavoidable impurities.
US08748772B1 Rigid serrated surface for welding shoes
Opposing, paired and positionally adjustable serrated water-cooled copper welding shoes, run-off tabs, and sumps affixed at the junction of workpieces to be welded with an Electroslag or Electrogas welding system. The serrated water-cooled copper welding shoes are capable of being controlled between 150 to 200 degrees Fahrenheit, and the welding flux plating over the serrations reduces over-chill to the molten weld puddle while also reducing the amount of heat that the serrated water-cooled shoe removes from the surface of the work piece. This reduction in base material heat allows the welding operator to reduce the weld voltage to dramatically decrease the size of the weld nugget and, in turn, to decrease the heat input from the welding process into the work piece. These significant thermo-dynamic improvements to the Electroslag or Electrogas welding process provide a smaller weld grain structure and much stronger bond in the weld fusion zone.
US08748771B2 Electric switchgear panel with improved arc protection assembly
A switchgear panel comprises an enclosure having an internal volume suitable to accommodate corresponding electrical or electronic equipment, and an arc protection assembly which is operatively associated to a wall of the enclosure. The arc assembly comprises at least a first barrier element having a first surface which is provided with one or more first through openings defining each a respective same first venting area, and a second barrier element which comprises a second surface provided with one or more second through openings defining each a respective same second venting area. The first venting area of each first through opening is different from the second venting area of the second through openings.
US08748770B2 Power switching apparatus
A power switching apparatus includes: a pressure tank having tube-like openings in a shank portion and having an insulating gas sealed therein; a vacuum valve housed in the pressure tank and connected to the pressure tank at one end; bushing conductors penetrating through the openings of the pressure tank and electrically connected to the vacuum valve; and current transformers provided on an outside of the pressure tank and measuring a current flowing through the bushing conductors. Tube-like current transformer installation portions on which to install the current transformers are provided above the openings of the pressure tank and an outside diameter of the openings of the pressure tank is made larger than an outside diameter of the current transformer installation portions.
US08748768B2 Method and system to indicate bin sweep status on document processing equipment
The present application relates to a method and system for mail item processing. More particularly, the present application relates to a method and system alerting document processing operators when all mail items have reached a designated bin in order to improve accuracy and efficiency during document processing as well as improving the overall efficiency of the document processing facility.
US08748767B2 Sub-membrane keycap indicator
Sub-membrane keycap indicators for keyboard assemblies may be implemented by positioning an indicator light element beneath a switch membrane circuit and within the baseplate of a key device. The indicator light element may be so positioned to direct light upward in a substantially narrow cone to an aperture or lightguide molded into a keycap in order to illuminate or light the indicator aperture or lightguide to indicate the current status of at least one component of an information handling system.
US08748765B2 Mounting structure of contact member in switch device
A contact point member comprises contact point pieces extending from both ends of a base portion and a gripping portion extending from the center of the base portion. The base portion is placed on an upper surface of a holding portion in a base member and is inserted between a main wall of a surrounding wall and stoppers on the holding portion for positioning. After a front end of the base portion is pressed and inserted under a presser portion provided in the main wall, when the gripping portion is pressed on the holding portion, an engagement piece formed in the rear end of the gripping portion is engaged to a corner hole formed in a projection of the holding portion, thus preventing the falling-down of the contact point member. The mounting operation of the contact point member is easily completed simply by pressing down the gripping portion.
US08748763B2 Switch assembly
In a pneumatically actuated switching device having a pneumatic actuator for delivering pressurized air to a switch assembly for generating an electrical signal, the switch assembly comprises a switch housing having a conductive element for opening and closing a circuit; and a pneumatic hose connection member removably mounted to the housing for connecting a pneumatic hose to the housing for delivering the pressurized air for generating the electrical signal. The pneumatic hose connection member has an enlarged portion flushed with the housing, a first extended portion having a threaded section for attachment to the housing, and a second extended portion having a plurality of anchor thugs for securing the pneumatic hose. The housing and pneumatic hose connection member have a plurality of gripping elements for facilitating the insertion and removal of the pneumatic hose connection member relative to the housing and the attachment and detachment of the pneumatic hose.
US08748756B2 Electric device and production method therefor
An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.
US08748754B2 System and method of forming a patterned conformal structure
A system and method of forming a patterned conformal structure for an electrical system is disclosed. The conformal structure includes a dielectric coating shaped to conform to a surface of an electrical system, with the dielectric coating having a plurality of openings therein positioned over contact pads on the surface of the electrical system. The conformal structure also includes a patterned conductive coating layered on the dielectric coating and on the contact pads such that an electrical connection is formed between the patterned conductive coating and the contact pads. The patterned conductive coating comprises at least one of an interconnect system, a shielding structure, and a thermal path.
US08748747B2 Arrangement with at least one superconductive cable
An arrangement with at least one superconductive cable (1) is indicated which is arranged in a cryostat (KR) serving for guiding a cooling agent, wherein the cryostat (KR) includes at least one thermally insulated metal pipe. To the outside of the cryostat (KR) is applied an electrically well conductive material that is composed of at least two strands (6, 7) which are wound one around the other with oppositely pitched direction around the cryostat (KR). The strands are connected fixedly and immovably to the cryostat (KR) at fixed points (8) mounted longitudinally spaced along an axial length of said cryostat.
US08748746B2 Cable-raceways
A cable-raceway providing electromagnetic shielding has rectangular channels defined by longitudinal-folds of a tape which comprises mesh having a warp of bare wires running lengthwise and a weft of a single, bare-wire. Metal brackets support it with the base of each bracket extending transversely under the raceway. The channels nest between arms upstanding from the base, and a plastic insert fits over the tape to enhance electrical contact between the mesh and bracket for electrical ground-bonding of the raceway. The insert provides teeth down the walls of each channel for engagement by cable-retainers to push them down into the channels for retaining underlying cables. Further support in the channels is provided by plastic straps that extend under the raceway and to which the channels are secured using inserts and cable-retainers corresponding to the inserts and retainers. One face of the mesh is covered by an electrically-insulating sheet.
US08748739B2 Conjugated polymers and their use in optoelectronic devices
Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.
US08748735B2 Dye-sensitized solar cell and process for manufacturing the same
A dye-sensitized solar cell is provided, wherein it can be produced by a relatively easy and simple process and ensures high conversion efficiency even in cases where the thickness of the porous semiconductor layer is increased. The dye-sensitized solar cell 10 includes, in the interior of or on the conductive-substrate-side surface of the porous semiconductor layer 16, conductive metal film 20, such as a film of tungsten, having a large number of randomly located penetrations 24. Penetrations 24 of the conductive metal film 20 are formed by forming a fine-particle layer on the surface of the porous semiconductor layer, forming a conductive metal film on the surface of the fine-particle layer, and making the fine-particle layer disappear by heating or solvent-cleaning.
US08748734B2 Rectangular conductor for solar battery, method for fabricating same and lead wire for solar battery
A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the time of bonding a connection lead wire even when a silicon crystal wafer is configured to have a thin sheet structure, can be provided. A conductor 1 having a volume resistivity equal to or less than 50 μΩ·mm, and a 0.2% yield strength value equal to or less than 90 MPa in a tensile test is formed into a rectangular conductor 10 for a solar battery having a rectangular cross section, and a surface of the rectangular conductor 10 for a solar battery is coated with a solder plating film 13, to provide a lead wire 20 for a solar battery.
US08748733B2 Solar module integration system
Embodiments of the present inventions are directed to systems, devices for use with systems, and method of mounting and retaining solar panels. A solar module mounting system may include a ballast, a sole mechanically coupled to a bottom surface of the ballast, a link member embedded in the ballast, an attachment module mechanically coupled to the link member, and a deflector mechanically coupled to the link member. A method of mounting a solar panel module may include forming a link member and a ballast, attaching the ballast to the link member, bonding a sole to a lower surface of the ballast and/or the link member, attaching a solar panel module to the link member with an attachment module member, electrically grounding the mounting system, routing a wiring from the solar panel module through a wire chase, and attaching a deflector module to the link member.
US08748728B2 Thin-film solar cell module and a manufacturing method thereof
Disclosed are a thin film solar cell module and a manufacturing method thereof. The thin film solar cell comprises, from bottom to top, a first substrate, a first electrode, an absorber layer, and a second electrode layer. A current output region with a current output element disposed therein is formed at the thin film solar cell module. The absorber layer in the current output region is removed through a mask, thereby making the first electrode layer contacts directly there with the second electrode layer. The current output region can be formed at the positive electrode, the negative electrode, or both positive electrode and negative electrode simultaneously, of the thin film solar cell module, thereby increasing the contact area between the first electrode layer and the second electrode layer at the positive electrode and the negative electrode. The useless current, the resistance and the heat generated there are reduced.
US08748724B1 Apparatus and method for generating effects based on audio signal analysis
Inventive methods and apparatuses for causing one or more effects to be generated based on analysis of an audio signal are disclosed. The apparatuses may be electrically coupled to an audio signal, may analyze the audio signal to determine if a control cue is present in the audio signal, and direct the effects generated by one or more effect generating devices if a control cue is present.
US08748722B2 Hinged drumstick
A percussion instrument is disclosed that may include a body having a longitudinal axis extending from a butt end to a striking end thereof and at least one hole extending through the thickness of the body substantially along or through an axis that is different from the longitudinal axis; and a grasping mechanism having a first grip plate at a first end thereof and a second grip plate at a second end thereof, and at least one shaft extending through the hole. The percussion instrument may further include a compliance mechanism disposed between the first and second grip plates, enabling the first and second grip plates to move closer together in response to a compressive force applied. One or more recesses or bores may be used for a more compact design, and the at least one hole may be on an angle to accommodate different drumming styles.
US08748717B2 Guitar accessories
A string-doubling apparatus and a face-mounted whammy bar system for stringed instruments are disclosed. A string-doubling apparatus may include a bridge portion and a nut assembly, both with multiple bearing surfaces to facilitate a double stringing of the instrument. A face-mounted whammy bar system may include a lever arm and a rotatable rod for manually and reversibly altering the string tension of an instrument.
US08748716B1 Maize hybrid X13C727
A novel maize variety designated X13C727 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X13C727 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X13C727 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X13C727, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X13C727. This invention further relates to methods for producing maize varieties derived from maize variety X13C727.
US08748711B1 Maize variety hybrid X18B747
A novel maize variety designated X18B747 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X18B747 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X18B747 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X18B747, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X18B747. This invention further relates to methods for producing maize varieties derived from maize variety X18B747.
US08748707B2 Soybean variety A1026505
The invention relates to the soybean variety designated A1026505. Provided by the invention are the seeds, plants and derivatives of the soybean variety A1026505. Also provided by the invention are tissue cultures of the soybean variety A1026505 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety A1026505 with itself or another soybean variety and plants produced by such methods.
US08748706B2 Soybean variety A1025957
The invention relates to the soybean variety designated A1025957. Provided by the invention are the seeds, plants and derivatives of the soybean variety A1025957. Also provided by the invention are tissue cultures of the soybean variety A1025957 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety A1025957 with itself or another soybean variety and plants produced by such methods.
US08748703B1 Soybean variety 75430NSTS
Disclosed is the seed of a novel soybean variety, designated 75430NSTS, a sample of which is deposited under ATCC Accession No. PTA-120555. Also disclosed are plants, or parts thereof, grown from the seed of the variety, plants having the morphological and physiological characteristics of the 75430NSTS variety, and methods of using the plant or parts thereof in a soybean breeding program.
US08748701B2 Inbred broccoli line BRM50-3905
Inbred broccoli lines, designated BRM50-3906 are disclosed. The invention relates to the seeds of inbred broccoli lines BRM50-3906, to the plants of inbred broccoli lines BRM50-3906, and to methods for producing a broccoli plant produced by crossing the inbred line BRM50-3906 with itself or another broccoli line. The invention further relates to hybrid broccoli seeds and plants produced by crossing the inbred line BRM50-3906 with another broccoli line.
US08748700B2 Control of AAD-1 monocot volunteers in fields of dicot crops
The subject invention relates in part to the control of AAD-1 monocot volunteers in fields planted with dicot crops such as soybeans or cotton. According to some embodiments of the subject invention, cyclohexanedione herbicides are selected as being an effective tool for controlling AAD-1 volunteers, as AAD genes do not impart tolerance to this class of graminicide chemistry. In addition, imidazolinone-class herbicides can be used in some preferred embodiments for selective control of conventional or herbicide-tolerant varieties of volunteer corn. AAD-1 corn comprising Event DAS-40278-9 is used in some particularly preferred embodiments.
US08748697B2 Polynucleotides and polypeptides involved in post-transcriptional gene silencing
This invention relates to isolated nucleic acid fragments encoding polypeptides involved in post-transcriptional gene silencing. The invention also relates to construction of a recombinant DNA construct encoding all or a portion of the polypeptide involved in post-transcriptional gene silencing, in sense or antisense orientation, wherein expression of the recombinant DNA construct results in production of altered levels in a transformed host cell of the polypeptide involved in post-transcriptional gene silencing.
US08748695B2 Molecular markers linked to PPO inhibitor tolerance in soybeans
This invention relates generally to the detection of genetic differences among soybeans. More particularly, the invention relates to soybean quantitative trait loci (QTL) for tolerance to protoporphyrinogen oxidase inhibitors, to soybean plants possessing these QTLs, which map to a novel chromosomal region, and to genetic markers that are indicative of phenotypes associated with protoporphyrinogen oxidase inhibitor tolerance. Methods and compositions for use of these markers in genotyping of soybean and selection are also disclosed.
US08748693B2 Multi-layer nonwoven in situ laminates and method of producing the same
Described herein is a meltspun laminate comprising two or more layers of meltspun fabrics, wherein layers that are adjacent to one another are in situ entangled with one another to define an interfacial region of mixed fibers between the layers. Also described herein is a method of making a meltspun in situ laminate comprising simultaneously meltspinning two or more polymer melts adjacent to one another to form adjacent fabrics, wherein layers that are adjacent to one another are in situ entangled with one another to form an interfacial region of mixed fibers between the layers. Also described herein is a meltspinning apparatus comprising one or more dies, each die comprising two or more meltspinning zones, wherein each zone comprises a plurality of nozzles that are fluidly connected to the corresponding zone, and wherein each zone is fluidly connected to a melt extruder.
US08748692B2 Absorbent article and surface sheet thereof
Disclosed is an absorbent article having an absorbent member positioned between a liquid-permeable multilayer surface sheet and a backside sheet. A plastic film layer is laminated on the non-skin contact surface side of the multilayer surface sheet. The multilayer surface sheet has embossments in the form of a large number of elevated portions protruding outward, the elevated portions being formed by heating the sheet to a temperature higher than the melting point of the plastic film layer but lower than the melting point of the nonwoven fabric layer. The multilayer surface sheet is also provided with a large number of openings. The absorbent article has a highly spatial appearance, provides good cushioning effect with minimized skin contact, and retains uneven emboss, even upon absorption of a body fluid.
US08748691B2 Three-dimensional printed article
A three dimensional printed article having a composite image printed thereon is disclosed. The composite image includes top and bottom artwork portions printed on the top and bottom surfaces of the printed article substrate. Both artwork portions are visible through a translucent or transparent substrate, thereby forming a visible composite image. The substrate can be a non-woven web. By printing on both surfaces of the substrate, the three dimensional printed article provides a good quality, aesthetically pleasing three-dimensional image that limits the loss of color and appearance of fuzz during normal use of the article. The three-dimensional printed article allows a more versatile creation of build colors and reduces the number of process colors required to print the composite image. The three-dimensional printed article can be integrated into an absorbent article, such as a diaper. A method of printing the three-dimensional printed article and forming the absorbent article are also disclosed.
US08748690B2 Absorbent articles comprising acidic cellulosic fibers and an organic zinc salt
An absorbent article, such as a diaper, panty diaper, sanitary napkin or incontinence device includes a liquid-permeable topsheet, a backsheet and an absorbent core enclosed between the liquid-permeable topsheet and the backsheet. The absorbent core includes acidic fluff pulp having a pH of 5.5 or less and an organic zinc salt, in particular zinc ricinoleate. The combination of organic zinc salt and acidic fluff pulp exerts a synergetic effect in the suppression of ammonia.
US08748685B1 Aromatic transformation using UZM-44 aluminosilicate zeolite
A new family of aluminosilicate zeolites designated UZM-44 has been synthesized. These zeolites are represented by the empirical formula. NanMmk+TtAl1-xExSiyOz where “n” is the mole ratio of Na to (Al+E), M represents a metal or metals from zinc, Group 1, Group 2, Group 3 and or the lanthanide series of the periodic table, “m” is the mole ratio of M to (Al+E), “k” is the average charge of the metal or metals M, T is the organic structure directing agent or agents, and E is a framework element such as gallium. UZM-44 may be used to catalyze an aromatic transformation process by contacting a feed comprising at least a first aromatic with UZM-44 at hydrocarbon conversion conditions to produce at least a second aromatic.
US08748679B2 Synthetic fluids and methods of manufacture
A method for producing synthetic fluids from TGFA's harvested from genetically modified seed crops in which all of the fatty acids in the TGFA's from the seeds of a crop have the same carbon atom chain length, preferably C12 or C14, and the synthetic fluids produced by the method. The TGFA's are hydroprocessed to cleave the fatty acids from the glycol backbone and to hydrodeoxygenate and isomerize the fatty acids to form single carbon chain length isoparaffins having a controlled degree of branching with minimum cracking. Controlled mixtures of hydrocarbon components, in which each hydrocarbon component of the mixture has a different single carbon atom chain length, are produced. The relative ratios of the single carbon atom number hydrocarbons in the mixture are selected to optimize the characteristics of the synthetic fluid product for a given application, if the end product is an SDF, the severity of the hydrotreatment is controlled such that the degree of cracking is minimized and the isomers generated are primarily monomethyl isoparaffins. If the end product is a jet fuel blend stock, the hydrotreatment is somewhat more severe in order to generate multiple branched isomers that have improved aerobic biodegradability and low temperature properties. The degree of hydrotreatment is controlled to limit the degree of branching in order to preserve the required thermal and oxidative stability properties, and to minimize cracking.
US08748676B2 Process for purifying a crude ethanol product
In one embodiment, the invention is to a process for purifying a crude ethanol product. The process comprises the step of hydrogenating acetic acid in a first reaction zone in the presence of a first catalyst to form the crude ethanol product comprising ethanol, acetaldehyde, acetic acid, water, and acetal. The process further comprises the step of separating at least a portion of the crude ethanol product into a refined ethanol stream and a by-product stream. The refined ethanol stream comprises ethanol and acetaldehyde; and the by-product stream comprises acetic acid and a substantial portion of the water from the crude ethanol product. The process further comprises the step of hydrolyzing in a second reaction zone at least a portion of the acetal.
US08748674B2 Separation process having an alcohol sidestream
Recovery of ethanol from a crude ethanol product obtained from the hydrogenation of acetic acid. The crude ethanol product is fed to a distillation column to yield an ethanol sidestream.
US08748673B2 Process of recovery of ethanol from hydrogenolysis process
Disclosed herein are processes for alcohol production by reducing an esterification product, such as ethyl acetate. The processes comprise esterifying acetic acid and an alcohol such as ethanol to produce an esterification product. The esterification product is reduced with hydrogen in the presence of a catalyst to obtain a crude reaction mixture comprising ethyl acetate, ethanol, and at least one alcohol having at least 4 carbon atoms. The ethanol is recovered with a reduced amount of the alcohol having at least 4 carbon atoms.
US08748665B2 Process for preparing an aromatic amine and apparatus therefor
The invention relates to a process for obtaining at least one aromatic amine from a liquid mixture comprising water and the at least one aromatic amine by extracting with at least one nitroaromatic in an extraction column (1) to form an essentially water- comprising raffinate stream and an extract stream comprising the at least one nitroaromatic and the aromatic amine. The extraction column (1) is divided by a dividing wall (3) into two regions (5, 7), and, in the case of an amount of liquid for separation which is less than a minimum cross sectional loading of the entire extraction column (1), the liquid mixture to be separated is fed only to one of the regions (5, 7) of the extraction column (1) divided by the dividing wall (3). The invention further relates to a process for preparing an aromatic amine and to an apparatus for separating a liquid mixture comprising water and at least one aromatic amine by extracting with at least one nitroaromatic, comprising an extraction column (1).
US08748664B2 Diamine compound and production method thereof
The present invention provides a novel diamine compound represented by formula (1) below. A in formula (1) denotes an optionally-substituted divalent aliphatic group (having a carbon number of 10 or less) or an optionally-substituted divalent aromatic group (having the number of rings of 4 or less), for example. The diamine compound of the present invention can be used as a raw material or a crosslinking agent for polyamide, polyimide, polyurethane, epoxy resin, etc.
US08748659B2 Method for producing alpha,beta-unsaturated carboxylic acid-N,N-disubstituted amide and method for producing 3-alkoxycarboxylic acid-N,N-disubstituted amide
The invention is directed to a technique for effectively producing an amide compound suitable for use as a solvent or a detergent on a large scale and at low cost.
US08748657B2 Process to prepare treprostinil
This present invention relates to an improved process to prepare prostacyclin derivatives. One embodiment provides for an improved process to convert benzindene triol to treprostinil via salts of treprostinil and to purify treprostinil.
US08748653B2 Method for purification of optically active α-fluorocarboxylic acid esters
Disclosed is a purification method of reducing and removing fluoride ions contained in an optically active α-fluorocarboxylic acid ester represented by formula [1] [in the formula, R1 represents a C1-6 alkyl group, R2 represents a C1-4 alkyl group, and * represents an asymmetric carbon], the purification method of the optically active α-fluorocarboxylic acid ester being characterized by that a distillation is conducted in the presence of an organic base. By this method, it is possible to greatly reduce the concentration of fluoride ion traces contained in the optically active α-fluorocarboxylic acid ester by a relatively easy operation. Of the organic base, a tertiary amine is preferable, and above all tri-n-butylamine is particularly preferable.
US08748652B2 Process for preparing iodopropargyl compounds
Process for the preparation of iodopropargyl compounds of the formula (I), in which R is hydrogen, in each case optionally substituted C1-C20-alkyl, C2-C20 alkenyl, C6-C20-aryl or C3-C20-cycloalkyl and n is an integer from 1 to 6, characterized in that propargyl compounds of the formula (II) in which R and n have the above meaning, are reacted with iodine and/or metal iodides in the presence of a base and using chlorine.
US08748651B2 Method for the synthesis of an omega-amino acid or ester starting from a monounsaturated fatty acid or ester
The invention relates to a method for the synthesis of ω-amino alkanoic acids or esters thereof starting from unsaturated natural fatty acids passing through an ω-unsaturated nitrile intermediate compound.
US08748648B2 Oligomer-calcium channel blocker conjugates
The invention provides small molecule drugs that are chemically modified by covalent attachment of a water soluble oligomer. A conjugate of the invention, when administered by any of a number of administration routes, exhibits characteristics that are different from the characteristics of the small molecule drug not attached to the water soluble oligomer.
US08748647B2 Silane and silicic acid polycondensates with radicals containing branched-chain urethane, acid amide and/or carboxylic acid ester groups
A polycondensate wherein R is alkylene, arylene, or alkylene-aryiene with 1-10 C, optionally containing O, S, carboxyl or amino; R1 is Z′-substituted alkylene, arylene, or alkylene-aryiene with 1-10 C, optionally containing O, S, carboxyl or amino; R′ is alkyl. alkenyl, aryl, alkylaryl, or arylalkyl with 1-20 C; R3 is a bond to another Si or metal atom or is H or alkyl with 1-10 C; B and B′ is an organically polymerizable group with at least one C═C bond and at least 2 C or —R2aSiX4-a or —R2aR1bSiX4-a-b, where R2 is alkylene with 1-10 C; Z′ is —NH—C(O)O—, —NH—C(O)—, bonded via NH to B′, or —CO(O)—, wherein when C is bonded to B′, B′—Z′— is not acrylate if B contains acrytate, and B′—Z′— is not methacrylate if B contains methacrylate, wherein a is 1 or 2, b is 0 or 1. X may undergo hydrolytic condensation to Si—O—Si.
US08748646B2 Process of making β-hydroxyamino compounds
The present application relates to molecules comprising one or more beta-hydroxyamine moieties, for example, aminosilicones and compositions such as consumer products comprising such molecules, as well as processes for making and using such molecules and such compositions. The aforementioned process is safer, more efficient and thus more economical. Thus, the aforementioned moleculers may be more widely used.
US08748640B2 Process to make fusidic acid cream
The invention discloses a process to make dermaceutical cream containing Fusidic acid which is formed in situ from Sodium Fusidate as the starting raw material, wherein Sodium Fusidate is converted into Fusidic acid under oxygen-free environment created using inert gas, preferably nitrogen. The cream produced by the process of the present invention has greater shelf-life stability and the finer particle size of the API than the conventional creams containing Fusidic acid. The cream produced by the process of the present invention contains Fusidic acid as the API that has been formed in situ from Sodium Fusidate, in a cream base comprising a preservative, an acid, a co-solvent, an emulsifier and a waxy material along with water, preferably purified water. The cream produced by the process of the present invention further optionally contains an ingredient selected from a group comprising, a buffering agent, an anti oxidant, a chelating agent, and a humectant, or any combination thereof.
US08748634B2 Photochromic materials demonstrating improved fade rates
Various photochromic materials are provided that are essentially free of polymerizable unsaturated groups, and comprise: a) an indeno[2′,3′:3,4]naphtho[1,2-b]pyran; and b) an electron-withdrawing, non-conjugating group bonded at the 11-position of the indeno[2′,3′:3,4]naphtho[1,2-b]pyran. Alternative embodiments include various substituents at other positions of the indeno[2′,3′:3,4]naphtho[1,2-b]pyran.Also provided are photochromic articles including a substrate and one of the above photochromic materials, in contact with at least a portion of the substrate.
US08748632B2 Positive allosteric modulators of group II mGluRs
The disclosure provides compounds and compositions, and methods of using these compounds and compositions, as positive allosteric modulators of the metabotropic glutamate subtype 2 (mGlu2) receptor, and for treating CNS disorders associated with the mGlu2 receptor including schizophrenia, anxiety, addiction, e.g. cocaine addiction, nicotine addiction, and the like.
US08748630B2 Process for preparing 2-amino-5-cyanobenzoic acid derivatives
Disclosed is a method for preparing a compound of Formula 1 comprising contacting a compound of Formula 2 with at least one compound of Formula 3 in the presence of a solvent comprising one or more organic solvents selected from ethers and nitriles and a catalytically effective amount of a palladium complex comprising at least one tertiary phosphine ligand of Formula 4 wherein R1 is NHR3 or OR4; R2 is CH3 or Cl; R3 is H, alkyl, cyclopropyl, cyclopropylmethyl or methylcyclopropyl; R4 is H or C1-C4 alkyl; M1 is an alkali metal; and R5, R6 and R7 are defined in the disclosure; provided that when R2 is Cl, then X is Br. Also disclosed is a method for preparing a compound of Formula 5 wherein R14, R15, R16 and Z are as defined in the disclosure using a compound of Formula 1 characterized by preparing the compound of Formula 1 by the aforedescribed method.
US08748626B2 Oxazole and thiazole compounds as KSP inhibitors
Disclosed are new substituted oxazole and thiazole compounds of Formula (I) and pharmaceutically acceptable salts, esters or prodrugs thereof, compositions of the derivatives together with pharmaceutically acceptable carriers, and uses thereof:
US08748625B2 Crystalline forms of 3-[5-(2-fluorophenyl)-[1,2,4]oxadiazol-3-yl]-benzoic acid
The present invention relates to crystalline forms of 3-[5-(2-fluorophenyl)-[1,2,4]oxadiazol-3-yl]-benzoic acid, pharmaceutical compositions and dosage forms comprising the crystalline forms, methods of making the crystalline forms and methods for their use for the treatment, prevention or management of diseases ameliorated by modulation of premature translation termination or nonsense-mediated mRNA decay.
US08748621B2 1,3-disubstituted 4-(aryl-X-phenyl)-1H-pyridin-2-ones
The present invention relates to a method of treating, ameliorating, or controlling a condition in a mammal, including a human, wherein the condition is selected from the group consisting of anxiety disorders, psychotic disorders, substance-dependence related disorders, mood disorders, epilepsy or convulsive disorders, idiopathic Parkinson's disease, and Alzheimer's disease, wherein the method comprises administering to the mammal an effective amount of a compound of Formula (I) wherein all radicals are as defined in the application and claims. In particular, such conditions are central nervous system disorders selected from the group of anxiety, schizophrenia, depression, and epilepsy.
US08748620B2 Thyroid hormone β receptor agonist
Provided is a heterocyclic derivative showing a thyroid hormone β receptor agonist action, which is effective for the prophylaxis or treatment of the diseases relating to the action. A compound represented by the formula [I]: wherein each symbol is as defined in the specification, a pharmacologically acceptable salt thereof, and a medicament containing the compound as an active ingredient.
US08748619B2 Process for the resolution of omeprazole
The present invention relates to process for the resolution of omeprazole. The present invention further provides a novel compound of enantiomers of omeprazole cyclic amine salt and a process for preparing it. The present invention also provides a solid of (R)- or (S)-omeprazole cyclic amine salt and a process for preparing it. The present invention also provides a process for the preparation of esomeprazole magnesium dihydrate substantially free of its trihydrate form. The present invention also provides a process for the preparation of recovery of chiral BINOL.
US08748617B2 Amide compound or salt thereof, and biofilm inhibitor, biofilm remover and disinfectant containing the same
The present invention provides a new amide compound and salt thereof that is capable of inhibiting biofilm formation or removing deposited biofilms. The present invention also provides a biofilm formation inhibitor or a biofilm remover containing the amide compound or salt thereof as an active ingredient.An amide compound or salt thereof according to the present invention is denoted by General Formula (1): wherein R1 is a hydrogen atom or a hydroxyl group, R2 is a C5-12 alkyl group, and Q is a substituent denoted by Formula (Q1) or (Q2), wherein n and m are 0 or 1.
US08748614B2 Substituted isoquinoline and isoquinolinone derivatives
The invention relates to 6-substituted isoquinoline and isochinolone derivatives of the formula (I) useful for the treatment and/or prevention of diseases associated with Rho-kinase and/or Rho-kinase mediated phosphorylation of myosin light chain phosphatase, and compositions containing such compounds.
US08748612B2 Modulators of cystic fibrosis transmembrane conductance regulator
The present invention relates to modulators of ATP-Binding Cassette (“ABC”) transporters or fragments thereof, including Cystic Fibrosis Transmembrane Conductance Regulator, compositions thereof, and methods therewith. The present invention also relates to methods of treating ABC transporter mediated diseases using such modulators.
US08748609B2 Catalysis of diketopiperazine synthesis
Provided is a method for the synthesis of N-protected bis-3,6-[4-aminobutyl]-2,5-diketopiperazine including the step of heating a solution of ε-amino protected lysine in the presence of a catalyst selected from the group consisting of sulfuric acid, phosphoric acid, and phosphorus pentoxide.
US08748608B2 4-phenylpiperazine derivatives with functionalized linkers as dopamine D3 receptor selective ligands and methods of use
Dopamine D3 receptor antagonists and partial agonists are known to modulate the reinforcing and drug-seeking effects induced by cocaine and other abused substances. By introducing functionality into the butylamide linking chain of the 4-phenylpiperazine class of ligands, improved D3 receptor affinity and selectivity, as well as water solubility, is achieved. A series of linking-chain derivatives are disclosed wherein functionality such as OH or OAc groups have been introduced into the linking chain. In general, these modifications are well tolerated at D3 receptors and achieve high selectivity over D2 and D4 receptors.
US08748602B2 Polymorphs of erlotinib hydrochloride and method of preparation
The present invention relates to three novel crystalline forms of Erlotinib hydrochloride and method of preparation thereof. Erlotinib hydrochloride is N-(3-ethynylphenyl)-6,7-bis(2 -methoxy ethoxy)-4-quinazolinamine hydrochloride of formula-(I): The present invention provides stable novel crystalline forms of Erlotinib hydrochloride designated as Form-M, Form-N and Form-P, and processes for the preparation of the same. Erlotinib hydrochloride can be used as medicament for the treatment of hyperproliferative disorders, such as cancers, in humans.
US08748601B2 Selective serine/threonine kinase inhibitors
Inhibition of protein kinases having one or more cysteine residues within the ATP binding site is effected by contacting the kinase, per se or in a cell or subject, with an inhibitory-effective amount of a compound having a heterocyclic core structure comprised of two or more fused rings containing at least one nitrogen ring atom, and an electrophilic substituent that is capable of reacting with a cysteine residue within the ATP binding site of a kinase. Preferred compounds include certain pyrrolopyrimidines and oxindoles having such an electrophilic substituent and optionally an aromatic or heteroaromatic substituent that is capable of interacting with a threonine or smaller residue located in the gatekeeper position of the kinase. Kinases lacking such cysteine residues may be engineered or modified so that they are capable of being inhibited by such compounds by replacing a valine or other amino acid residue within the ATP binding site by a cysteine residue.
US08748600B2 Cyclic triazo sodium channel blockers
The present invention relates to triazine compounds having sodium channel blocking properties, and to use of the compounds for preparation of medicaments for treatment of associated disorders. The triazine compounds are of formula (I) wherein: R1 is hydrogen or a substituent group; R2 is amino or a substituent group; N* is amino when R1 is hydrogen or ═NH when R1 is a substituent group; R3 and R4 are both carbocyclic, heterocyclic or alkyl groups and may be same or different; and R5 is hydrogen, alkyl or a cyclic aryl group, with the proviso that: when R3 and R4 are both alkyl they are linked to form a cycloalkyl group, and R5 is a cyclic aromatic group; and when R3 and R4 are both carbocyclic or heterocyclic groups, R5 is hydrogen or an alkyl group; or a salt thereof.
US08748597B2 2,4-pyrimidinediamine compounds and their uses
The present invention provides 2,4-pyrimidinediamine compounds that inhibit the IgE and/or IgG receptor signaling cascades that lead to the release of chemical mediators, intermediates and methods of synthesizing the compounds and methods of using the compounds in a variety of contexts, including in the treatment and prevention of diseases characterized by, caused by or associated with the release of chemical mediators via degranulation and other processes effected by activation of the IgE and/or IgG receptor signaling cascades.
US08748596B2 Process for the preparation of histamine H3 receptor modulators
The present invention is directed to novel processes for the preparation of histamine H3 receptor modulators, in the treatment of for example, cognitive disorders, sleep disorders and/or psychiatric disorders.
US08748595B2 Methods for fucoidan purification from sea weed extracts
Methods for purifying fucoidan in extracts from brown seaweed are disclosed. In particular, methods of purifying fucoidan in the extract to remove heavy metal ions, bacterial and endotoxin contaminants, and other impurities are disclosed. The methods include the use of a chelating agent, selective precipitation, and filtration.
US08748592B1 siRNA for inhibition of OTUB1 expression and pharmaceutical composition containing the same
The present invention relates to an siRNA inhibiting expression of the OTUB1 protein and a composition for preventing or treating cancer containing same as an active ingredient. In accordance with the present invention, cancer cell growth can be remarkably inhibited by inhibiting OTUB1 expression using the siRNA of the present invention.
US08748590B2 Oligonucleotides for detection test of polymorphism of EGFR exon 19 and use therof
An oligonucleotide for a detection test of a polymorphism of EGFR exon 19, the oligonucleotide being at least one selected from the group consisting of a P1 oligonucleotide and a P1′ oligonucleotide, the P1 oligonucleotide having a 3′ end subjected to an extension inhibition treatment, which has an identity of at least 80% with respect to a base sequence including at least the 115th to the 123rd bases of the base sequence indicated in SEQ ID NO: 1 and has a length of from 9 to 80 bases; and the P1′ oligonucleotide having a 3′ end subjected to an extension inhibition treatment, which hybridizes under stringent conditions with a complementary strand of a base sequence including at least the 115th to the 123rd bases of the base sequence indicated in SEQ ID NO: 1 and having a length of from 9 to 80 bases.
US08748585B2 Antibodies that bind to OX40 and their uses
The present invention relates to antagonist antibodies or fragments thereof that bind to human OX40. More specifically, the present invention relates to an antagonist antibody or fragment thereof that binds to human OX40 comprising a heavy chain CDR1 comprising the amino acid sequence of SEQ ID NO: 1, and/or a heavy chain CDR2 comprising the amino acid sequence of SEQ ID NO: 2, and/or a heavy chain CDR3 comprising the amino acid sequence of SEQ ID NO: 3; and/or comprising a light chain CDR1 comprising the amino acid sequence of SEQ ID NO: 4, and/or a light chain CDR2 comprising the amino acid sequence of SEQ ID NO: 5 and/or a light chain CDR3 comprising the amino acid sequence of SEQ ID NO: 6.
US08748579B2 Collagen-based matrix for use as restorative material, and method for preparing the same
Disclosed herein are a collagen-based matrix for use as a restorative material and a method for the preparation thereof. An atelocollagen dispersion is spread at a predetermined thickness over a plate and freeze-dried to form a porous collagen membrane. An atelocollagen dispersion is separately spread over a plate and pressurized to form a dense collagen membrane. This is overlaid with the porous collagen membrane and immersed in an EDS solution in ethanol to crosslink the two membranes with each other. From the bilayer structure thus constructed, EDS is removed, followed by lyophilization and cutting into an appropriate size.
US08748576B2 Compositions and polyeptides related to type 1 diacylgycerol O-acyltransferase (DGAT)
Compositions related to the quantitative trait locus 6 (QTL6) in maize and methods for their use are provided. The compositions are novel molecular marker loci genetically linked with QTL6 and which are associated with increased oil content and/or increased oleic acid content and/or an increased oleic acid/linoleic acid ratio of a plant. These novel markers are characterized by the presence of at least one polymorphism relative to the corresponding marker locus from the QTL6 region of non-high-oil, non-high-oleic acid maize plants. In some embodiments, the novel marker loci comprise coding sequence for a maize DGAT1-2 polypeptide or biologically active variant thereof. The marker loci of the invention, and suitable fragments thereof, are useful in methods for manipulating oil and/or oleic acid content and/or oleic acid/linoleic acid ratio of a plant, for marker-assisted selection of a plant, and for marker-assisted breeding of the high oil and/or high oleic acid trait.
US08748572B2 RNase a peptides, fragments and uses thereof
The present invention features isolated polypeptides that have bactericidal and angiogenic activities. The invention features isolated polypeptides comprising amino acid sequences of RNase A ribonucleases, fragments and variants thereof, pharmaceutical compositions, and methods for treatment of a subject.
US08748567B2 Method for delivery across the blood brain barrier
The present invention provides compositions and methods useful for delivering agents to target cells or tissues, for example nerve cells and other cells in the central nervous system. The compositions and methods are useful for delivering agents across the blood-brain barrier. The present invention also provides methods of using the compositions provided by the present invention to deliver agents, for example therapeutic agents for the treatment of neurologically related disorders.
US08748566B2 Pharmacologically active antiviral peptides and methods of use
This invention relates to peptides having antiviral properties. The antiviral peptides comprise membrane transiting peptides, and active fragments and derivatives of such peptides. The antiviral peptides exhibit activity against a broad spectrum of viruses, including enveloped and nonenveloped viruses, and are used in pharmaceutical compositions to prevent and/or treat viral infections.
US08748565B2 Pharmacologically active antiviral peptides and methods of their use
This invention relates to peptides having antiviral properties. The antiviral peptides comprise membrane transiting peptides, and active fragments and derivatives of such peptides. The antiviral peptides exhibit activity against a broad spectrum of viruses, including enveloped and nonenveloped viruses, and are used in pharmaceutical compositions to prevent and/or treat viral infections.
US08748560B2 Adsorbent for the removal of blood cells
A blood cells removal module including a casing having an inlet into which a blood flow before blood cells removal flows, and an outlet in which a blood flow after blood cells removal is discharged, an adsorbent for blood cells removal of short fiber shape accommodated in the casing, a mesh being provided inside the inlet and the outlet, respectively, and holding the adsorbent for blood cells removal in the casing, wherein a length of the adsorbent for blood cells removal is within a range from 1 to 60% of the internal diameter of the casing.
US08748559B2 High molecular weight polyester polymers with reduced acetaldehyde
Polyester compositions, especially polyethylene terephthalate homopolymer and copolymers, are disclosed containing titanium catalysts and catalyst deactivator added late in the manufacturing processing having reduced acetaldehyde generation rates. The polyester compositions are low in free acetaldehyde, making them suitable for fabrication into beverage containers for relatively tasteless beverages such as bottle water. Furthermore, the polyesters are polymerized to a high inherent viscosity in reduced processing time, without the necessity of further polymerization in the solid state, and in the absence of acetaldehyde scavengers leading to polyester polymers having reduced color.
US08748557B2 Extreme low formaldehyde emission UF resin with a novel structure and its preparation
The present invention relates to an extreme low formaldehyde emission UF resin with a novel structure, and a process for its preparation. This UF resin is produced from formaldehyde, urea, a long chain multi-aldehyde prepolymer, and some modifiers. Its process follows three steps: weak caustic, weak acid and weak caustic. By using this prepolymer, the modified UF resin has stable alkyl ether structure, and the residual aldehyde groups on the UF polymer chain could accelerate cross-linking instead of dissociative formaldehyde. The UF resin made from this invention has extreme low dissociative formaldehyde and simple technology. The boards produced from this resin have good physical performance and water resistance. Moreover, the formaldehyde emission of the boards is extreme low, achieving Japan F⋆⋆⋆⋆ grade, the average emission value ≦0.3 mg/L.
US08748556B2 Self-supporting dynamic polymer membrane, and uses
A method of preparation for Self-supporting dynamic polymer membranes (called “dynamer” membranes) of the polyimine type is provided along with their use in separation processes, especially for separating gaseous species.
US08748555B2 Structurally precise poly(propylene carbonate) compositions
The present invention provides articles made from structurally precise poly(propylene carbonate) and blends thereof. Provided articles include articles manufactured from poly(propylene carbonate) wherein the PPC has a high head-to-tail ratio, low ether linkage content, narrow polydispersity and low cyclic carbonate content. Also provided are articles made from, incorporating or coated with structurally precise PPC.
US08748549B2 Fluorinated compound, fluorinated polymer and fluorinated copolymer
To provide a fluorinated compound having an RF group with at most 6 carbon atoms, whereby a fluorinated polymer having a highly durable water/oil repellency can be produced, and an environmental load is little, and a fluorinated polymer and a fluorinated copolymer having a highly durable water/oil repellency and presenting little environmental load, obtainable by polymerizing such a fluorinated compound. A fluorinated compound represented by the following formula (I) and its polymer: CH2═C(M)COO(CH2)nPhCOO(CH2)mCrF2r+1  (I) (in the formula (I), M is a hydrogen atom, a methyl group or a halogen atom, n is an integer of from 0 to 2, Ph is a phenylene group, m is an integer of from 1 to 4, and r is an integer of from 1 to 6).
US08748547B2 Ethylene α-olefin copolymer
The present invention relates to an ethylene α-olefin copolymer having a narrower molecular weight distribution, and a uniform distribution of comonomer. The ethylene α-olefin copolymer according to the present invention has a uniform comonomer distribution and exhibits a lower density in the same comonomer content, unlike conventional ethylene copolymers having a random or blocky comonomer distribution.
US08748545B2 Process for producing bio-resourced polymer-grade acrylic acid from glycerol
The present invention relates to the manufacture of bioresourced polymer-grade acrylic acid from glycerol. The polymer grade acrylic acid produced has limited content of certain impurities harmful to polymerization processes, such as, total aldehydes, protoanemonin, maleic anhydride and nonphenolic polymerization inhibitors. The invention also relates to the use of the bioresourced acrylic acid obtained for manufacture of superabsorbents or for manufacture of polymers or copolymers using amide or ester derivatives of the bioresourced acrylic acid.
US08748544B2 Medical appliance having a slidable coating layer and syringe
A medical appliance including a slidable coating layer moves in contact with an inner surface of a medical member or that of a lumen. The medical appliance has the slidable coating layer formed at a part thereof which contacts the medical member or the lumen. The slidable coating layer is formed of a composition containing a solventless-type hardening silicone-based resin.
US08748543B2 Polylactic acid film
The polylactic acid film is obtained by melt extruding polylactic acid (A) prepared by melt kneading together polylactic acid (B) which comprises an L-lactic acid unit as the main ingredient and polylactic acid (C) which comprises a D-lactic acid unit as the main ingredient in a specific weight ratio, wherein the polylactic acid film has: (a) a stereocomplex crystal rate (S) defined by the following equation (i) of 90% or more: S={(ΔHmsc/(ΔHmsc+ΔHmh)}×100  (i) (in the above equation, ΔHmh is the melting enthalpy of a low-melting point crystal melting peak at a temperature lower than 190° C. obtained by differential scanning calorimeter (DSC) measurement and ΔHmsc is the melting enthalpy of a high-melting point crystal melting peak at a temperature of 190° C. or higher obtained by DSC measurement), (b) a haze of 10% or less, and (c) a haze change of 5% or less after it is heated at 140° C. for 10 minutes.
US08748540B2 Compositions comprising solvated aromatic amines and methods for the preparation thereof
The present invention provides a composition comprising a solvated aromatic amine and a liquid carrier, wherein said solvated aromatic amine is the reaction product of an aromatic amine and at least one of any anhydride, an isocyanate or an acid in the liquid carrier. The present invention also provides a method of preparing a composition comprising a solvated aromatic amine and a liquid carrier, said method comprising the steps of providing a reaction mixture comprising: a) an aromatic amine; b) at least one of an anhydride, an isocyanate or an acid; and c) a liquid carrier; and heating the reaction mixture at an elevated temperature to provide the solvated aromatic amine in the liquid carriers. The present invention further provides the use of the compositions for the preparation of the curable compounds and for gasoline resistant coatings.
US08748537B2 Lignin-derived thermoplastic co-polymers and methods of preparation
The present invention relates to a crosslinked lignin comprising a lignin structure having methylene or ethylene linking groups therein crosslinking between phenyl ring carbon atoms, wherein said crosslinked lignin is crosslinked to an extent that it has a number-average molecular weight of at least 10,000 g/mol, is melt-processible, and has either a glass transition temperature of at least 100° C., or is substantially soluble in a polar organic solvent or aqueous alkaline solution. Thermoplastic copolymers containing the crosslinked lignin are also described. Methods for producing the crosslinked lignin and thermoplastic copolymers are also described.
US08748532B2 Flexible, low temperature, filled composite material compositions, coatings, and methods
There is provided a flexible, low temperature, filled composite material composition and method of synthesizing the composite material composition. The composite material composition has a segmented copolymer elastomer having an α,ω-(alpha, omega)-dihydroxy terminated polysiloxane species, a diisocyanate species, and an amine or hydroxy terminated chain extender. The composite material composition further has a solid particulate filler. The composite material composition has a high flexibility at a temperature of down to about −100 degrees Celsius, has a percent elongation of greater than about 100%, and has a tensile strength of greater than about 5 MPa (megapascals).
US08748531B2 Polymers functionalized with oxime compounds containing an acyl group
A method for preparing a functionalized polymer, the method comprising the steps of polymerizing monomer to form a reactive polymer; and reacting the reactive polymer with a protected oxime compound containing an acyl group.
US08748525B2 Polyester film and method of fabricating the same
A polyester film is described, including a first polyester and a second polyester. The weight ratio of the first polyester to the second polyester ranges from 1:1 to 1:3. The glass transition temperature of the first polyester is higher than 140° C. and that of the second polyester is lower than 140° C.
US08748523B2 Procedure for manufacture of aqueous suspensions of calcium carbonate and suspensions obtained, and their uses
The object of the invention consist of a process for the manufacture of aqueous suspensions of calcium carbonate using an acrylic polymer with an average by weight molecular weight of between 8,000 g/mole and 15,000 g/mole and a molar content of less than 20% of polymeric chains of molecular weight less than 3,000 g/mole. It also concerns the aqueous suspensions obtained, possibly dried, and their uses in the paper, paint, plastics and mastics industry.
US08748522B2 Solution process for the olefins polymerization
A process for the polymerization of one or more olefins under solution polymerization conditions to produce a polymeric solution, said process comprising contacting the produced polymeric solution with one or more antioxidant compounds before or concurrently with subjecting the polymeric solution to a devolatilization step to separate the polymer from the unreacted monomers.
US08748520B2 Polycarbonate resin composition containing triazine compound and molded article using the same
A polycarbonate resin composition comprising a compound represented by the following formula (1): wherein each of R1a, R1b, R1c, R1d and R1e independently represents a hydrogen atom or a monovalent substituent provided that OH is excluded, at least one of the substituents represents a substituent having a Hammett's σp value of 0.3 or more, and the substituents may be combined each other to form a ring; and each of R1g, R1h, R1i, R1j, R1k, R1m, R1n and R1p independently represents a hydrogen atom or a monovalent substituent, and the substituents may be combined each other to form a ring.
US08748519B2 Thermoplastic polymers comprising oxygen scavenging molecules
The disclosure relates to oxygen scavenging polymer compositions, methods of making the compositions, articles prepared from the compositions, and methods of making the articles. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
US08748514B2 Aqueous release agent and its use in the production of polyurethane moldings
The invention relates to aqueous dispersions containing agents having release activity, emulsifiers and customary auxiliaries and additives, wherein a combination of A) at least one agent having a release activity, selected from the group consisting of soaps, oils, waxes and silicones, and B) polyesters is used as agents having release activity.
US08748513B2 Epoxy resin composition, and prepreg and printed circuit board using the same
Disclosed is an epoxy resin composition for printed circuit board, which includes (A) an epoxy resin; (B) a composite curing agent, including amino-triazine-novolac resin and diaminodiphenylsulfone mixed in a certain proportion; (C) a curing accelerator; and (D) an optional inorganic filler.
US08748512B2 Method for producing polymer particles by the polymerization of liquid droplets in a gas phase
A process for producing polymer particles by polymerizing liquid droplets in a gas phase surrounding the droplets, said droplets comprising at least one monomer and being coated with particulate solids during the polymerization.
US08748509B2 Friction material and resin composition for friction material
A friction material characterized by using a resin composition for friction materials, the resin composition containing, as a binder, an aromatic imide oligomer having an addition-reactive group at an end thereof. Also described is a resin composition for friction materials, containing: a powder of an aromatic imide oligomer having an addition-reactive group at an end thereof; at least one type of fiber selected from the group consisting of carbon fiber, aramid fiber, glass fiber, ceramic fiber, and metal fiber; and an inorganic filler. The friction material and a resin composition for friction materials have good formability and in which the binder itself has excellent heat resistance and mechanical properties, compared to a friction material using a phenolic resin as a binder.
US08748506B2 Flexible UV curable coating compositions
Disclosed herein are ultraviolet (UV) curable coating compositions that provide transparent, flexible, and abrasion-resistant coatings when cured on a substrate. The coating compositions comprise an adduct of a multifunctional acrylate monomer component and an amino-organofunctional silane; an organic solvent component; an acid; a colloidal silica component; and a multifunctional urethane acrylate oligomer component. The amino-organofunctional silane is represented by the formula XaSi[Q1(NHQ2)bNZH]4-a, where X is an alkoxy group having from 1 to 6 carbon atoms; Q1 and Q2 are the same or different divalent hydrocarbon groups; Z is a hydrogen or a monovalent hydrocarbon group; a is an integer from 1 to 3; and b is an integer from 0 to 6. Also disclosed herein are processes for preparing such coating compositions and articles comprising coatings cured from such coating compositions.
US08748496B2 Methods of treatment of hyperuricemia and associated disease states
The present disclosure relates to compositions and methods for reducing uric acid levels in a individual in need thereof. The present disclosure further relates to the treatment of hyperuricemia and diseases associated with high uric acid levels in mammals using scyllo-inositol.
US08748494B2 Method for improving the therapeutic efficacy of curcuminoids and their analogs
The invention relates to a method for increasing the therapeutic efficacy of curcuminoids and analogs. More specifically, the invention relates to a method for increasing the therapeutic efficacy of systemically administered formulations that contain curcuminoids and the equivalent therapeutics thereof. The method is characterized in that together with the administration of the formulation the patient is irradiated with visible, and optionally ultraviolet, radiation during a treatment. The invention also relates to phototherapy devices that emit visible radiation over a surface area greater than 0.2 m2 with an irradiance of more than 2 mW/cm2, the devices being suitable for use in the treatment of proliferative diseases, particularly moderate-to-severe psoriasis or tumor processes.
US08748493B2 Inhibitors of cathepsin S for prevention or treatment of obesity-associated disorders
The present invention relates to methods (and pharmaceutical compositions) for treating and/or preventing for obesity associated disorders, particularly related to a deregulation of glucose homeostasis, by administrating Cathepsin S inhibitors. The invention also relates to methods for diagnosing insulin resistance and glucose tolerance by measuring Cathepsin S levels in a biological sample obtained from a subject.
US08748491B2 Dietary and pharmaceutical compositions containing tricyclic diterpenes and their derivatives and their uses
The present invention refers to tricyclic diterpenes and their derivatives of the formulae (I) and (II), wherein R1 is hydrogen or C1-6-alkyl; R2 is hydroxy, C3-5-acyloxy, hydroxymethyl, 1,3-dihydroxypropyl or C1-6-alkyl; R3 and R4 independently from each other are hydrogen, hydroxy, hydroxymethyl, C1-5-acyloxy or C1-6-alkoxy; R5 is C1-6-alkyl, hydroxymethyl carboxy or methoxycarbonyl; R9 is hydrogen, hydroxymethyl, methoxy, oxo or C1-5-acyloxy; R10 is hydrogen, or R5 and R9 taken together are —CH2—O— or —O—CH2—; or R5 and R10 taken together are —CO—O—, —O—CO—, —CH2—O— or —O—CH2—; R6 is hydrogen, or R5 and R6 together to form a bond; R7 and R8 independently from each other are C1-6-alkyl, carboxy, x-hydroxy-Cx-alkyl (with x being an integer from 1 to 6), or C1-6-alkoxycarbonyl with the proviso that at least one of R7 and R8 is C1-6-alkyl; R11 and R12 are both hydrogen or R11 and R12 together are oxo, with the further proviso for formula (I) that if R2 is hydroxy R1 is C1-6-alkyl, for use as medicaments for the treatment of a disorder connected to impaired neurotransmission, as well as to dietary and pharmaceutical compositions and their uses.
US08748486B2 Inhibitors of yeast filamentous growth and method of their manufacture
The invention broadly relates to the use of α, β-unsaturated fatty acids to inhibit the filamentous growth of fungi and yeasts and to a method for producing same. In particular the invention relates to the use of optionally substituted C8 to C15 α, β-unsaturated fatty acids or salts, esters or amides thereof for inhibiting or retarding the yeast-to-mycelium transition of organisms having a dimorphic life cycle.
US08748482B2 Lubiprostone crystal, the use and the method for the preparation thereof
The present invention relates to a lubiprostone crystal, the method for the preparation thereof, and a pharmaceutical composition or kit comprising the same, as well as the use of said crystal in the preparation of a medicament for the treatment of gastrointestinal tract diseases, especially constipation. The X-ray powder diffraction pattern of said crystal comprises characteristic peaks measured at the following 2θ reflection angles: 14.6±0.2°, 17.0±0.2° and 19.6±0.2°. As compared to amorphous lubiprostone, the crystal of the present invention has the advantages of relative high purity, stable properties and easy-for-storage and use.
US08748480B2 Methods for treating opioid tolerance
The present invention relates to methods for identifying agents which bind to specific amino acid residues of the protein interaction site of G protein β protein subunit. Compounds identified in accordance with the assay of the invention and methods for using the compound for modulating at least one activity of a G protein are also provided.
US08748479B2 Process for purifying crude furan 2,5-dicarboxylic acid using hydrogenation
A process to produce a dry purified furan-2,5-dicarboxylic acid (FDCA) is described. After oxidation of 5-(hydroxymethyl)furfural (5-HMF), a crude FDCA stream is produced that is fed to a crystallization zone followed by a solid-liquid displacement zone to form a low impurity slurry stream. The solids in the low impurity slurry stream are dissolved in a dissolution zone to produce a hydrogenation feed that is hydrogenated in a hydrogenation reactor to generate a hydrogenated FDCA composition. The hydrogenated FDCA composition is routed to a crystallization zone to form a crystallized produce stream that is separated from liquid in a solid-liquid separation zone to generate a purified wet cake stream containing FDCA that can be dried in a drying zone to generate a dry purified FDCA product stream.
US08748478B2 Sulfamides as TRPM8 modulators
Disclosed are compounds, compositions and methods for treating various diseases, syndromes, conditions and disorders, including pain. Such compounds are represented by Formula I as follows: wherein Y, R1, R2, R3, R4, RA, and RB are defined herein.
US08748475B2 Methods and compositions for treating lupus
The invention relates to compositions and methods for treating lupus. The methods typically comprise the step of administrating one or more compounds selected from isoindigo, indigo, indirubin, or derivatives thereof, such as, Meisoindigo and NATURA in an amount sufficient to treat the lupus; preferably by modulating cytokine expression. Preferably the compound is in an amount less than sufficient to substantially inhibit cyclin dependent kinases.
US08748473B2 Methods of treating post-traumatic stress disorder using pro-neurogenic compounds
This invention relates generally to stimulating neurogenesis (e.g., post-natal neurogenesis, e.g., post-natal hippocampal neurogenesis) and protecting from neuron cell death.
US08748472B2 Stabilized formulations of CNS compounds
Formulations of molindone having superior stability and methods of administering same are provided. The formulations may be immediate, modified, or otherwise delayed release formulations of molindone.
US08748466B2 Isoxazole derivatives useful as antibacterial agents
The present invention is directed to a new class of hydroxamic acid derivatives, their use as LpxC inhibitors and, more specifically, their use to treat bacterial infections.
US08748465B2 Phenylamino-benzoxazole substituted carboxylic acids, method for their production and use thereof as medicaments
This invention relates to a compound of formula I, wherein R1, R2, R6, R7, R8, R9, R10, m and X are as defined herein, or a physiologically tolerated salt thereof, its pharmaceutical composition and use for lowering blood glucose, treating diabetes, or increasing insulin release.
US08748464B2 Use of SIRT1 activators or inhibitors to modulate an immune response
The present disclosure provides a method of increasing an immune response in an individual, the method involving administering to an individual in need thereof an inhibitor of SIRT1. The present disclosure provides a method of reducing an immune response, e.g., to treat chronic immune hyperactivity, the method generally involving administering to an individual in need thereof an activator of SIRT1. The present disclosure provides a method of modulating activation and differentiation of CD4+ T cells.
US08748460B2 Iminosugars and methods of treating togaviral diseases
Provided are novel methods of treating and/or preventing a disease or condition caused by or associated with a virus belonging to the Togaviridae family using iminosugars, such as DNJ derivatives.
US08748457B2 2-amino-2- [8-(dimethyl carbamoyl)- 8-aza- bicyclo [3.2.1] oct-3-yl]-exo- ethanoyl derivatives as potent DPP-IV inhibitors
The present invention is related to novel 2-Amino-2-[8-(dimethyl carbamoyl)-8-aza-bicyclo[3.2.1]oct-3-yl]-exo-ethanoyl derivatives of the general formula (A), their tautomeric forms, their stereoisomers, their pharmaceutically acceptable salts, pharmaceutical compositions containing them, methods of making of the above compounds, and their use as Dipeptidyl Peptidase-IV (DPP-IV) Inhibitors, which are useful in the treatment or prevention of diseases particularly Type II diabetes, other complications related to diabetes and other pathogenic conditions in which DPP IV enzyme is involved.
US08748452B2 Indolizine derivative and use thereof for medical purposes
The present invention provides compounds useful as agents for the prevention or treatment of a disease associated with abnormal serum uric acid level and the like. That is, the present invention relates to indolizine derivatives represented by the following formula (I) having xanthine oxidase inhibitory activities and useful as agents for the prevention or treatment of a disease associated with abnormality of serum uric acid level, prodrugs thereof, salts thereof or the like. In the formula, ring U represents aryl or heteroaryl; R1 represents halogen, a hydroxy group or the like; R2 represents halogen, a hydroxy group, alkyl, alkoxy, alkyl substituted by fluorine, alkoxy substituted by fluorine or the like; m represents a number from 0 to 2; n represents a number from 0 to 3; and R3 represents hydrogen, fluorine or the like.
US08748450B2 Morphinan compounds
This disclosure relates to novel morphinan compounds and their derivatives, pharmaceutically acceptable salts, solvates, and hydrates thereof. This disclosure also provides compositions comprising a compound of this disclosure and the use of such compositions in methods of treating diseases and conditions that are beneficially treated by administering a σ1 receptor agonist that also has NMDA antagonist activity.
US08748448B2 Combination analgesic employing opioid agonist and neutral antagonist
In some embodiments, the invention provides a non-addictive analgesic co-formulation comprising an opioid agonist in an amount sufficient to confer analgesia in a mammalian subject (such as a human) and a neutral opioid antagonist in an amount sufficient to inhibit peripheral effects of the opioid agonist, and insufficient to block substantial central effects of the opioid agonist in the subject. The formulation may be formulated for oral administration to the subject. Such formulations, and methods of using the same, may also deter diversion, inhibit peripheral effects of the opioid agonist, and reduce addiction liability.
US08748445B2 Methods for treating glioma
The present disclosure provides for method of treatment and/or prevention of disease states that require cystine for maintenance or progression of the disease state. In addition, methods for screening and identifying novel therapeutic agents useful in the treatment of such disease states are described. In one embodiment, the disease state is a cancer, such as, but not limited to, glioma. In this embodiment, methods for the treatment and prevention of glioma by inhibiting cystine uptake or decreasing intracellular cystine concentrations are provided. The present disclosure teaches that glioma cells are dependent on system Xc for cystine uptake. Pharmacological inhibition of system Xc causes a rapid depletion of intracellular glutathione, resulting in decreased cell growth. In contrast, non-malignant astrocytes and cortical neurons remain viable in the presence of Xc inhibitors and continue to take up cystine via alternate amino acid transporters.
US08748444B2 Cyclic urea inhibitors of 11β-hydroxysteroid dehydrogenase 1
Disclosed are compounds represented by Formula (I): or pharmaceutically acceptable salts, enantiomers or diastereomers thereof. Also disclosed are pharmaceutical compositions comprising the compounds of Formula (I) or pharmaceutically acceptable salts, enantiomers or diastereomers thereof and methods of inhibiting 11 β-HSD1 activity comprising the step of administering to a mammal in need of such treatment an effective amount of a compound of Formula (I) or pharmaceutically acceptable salt, enantiomer or diastereomer thereof. Values for the variables of Formula (I) are defined herein.
US08748441B2 Therapeutic uses of quinazolinedione derivatives
The subject matter of the present invention is the use of compounds of formula (I) in the form of a base, a hydrate or a solvate, or of mixtures thereof, as a medicament or for preparing a medicament intended for the treatment and/or prevention of disorders associated with the central nervous system (abbreviated to CNS) and/or associated with the peripheral nervous system (abbreviated to PNS).
US08748438B2 Inhibitors of Bruton's tyrosine kinase
Disclosed herein are compounds that form covalent bonds with Bruton's tyrosine kinase (Btk). Also described are irreversible inhibitors of Btk, such as those having the structure of Formula (A) Methods for the preparation of the compounds are disclosed. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the Btk inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, and inflammatory diseases or conditions.
US08748437B2 Crystal of 2-(3,4 dichlorobenzyl)-5-methyl-4-oxo-3,4-dihydrothien[2,3-D]pyrimidine-6-carboxylic acid
The invention provides a crystal of 2-(3,4-dichlorobenzyl)-5-methyl-4-oxo-3,4-dihydrothieno[2,3-d]pyrimidine-6-carboxylic acid (which has the chemical structure shown below) and a mixed crystal comprising such a crystal. The invention also provides methods of producing such crystals, pharmaceutical compositions comprising such crystals, and methods of modulating phosphodiesterase-9 activity and treating disorders such as overactive bladder syndrome by administration of an effective amount of the crystals.
US08748435B2 Pyrazolo pyrimidine derivatives
The present invention relates to pyrazolo pyrimidine derivatives, to methods of preparing these, to combinations and pharmaceutical composition comprising these, and to their use in the treatment of diseases and disorders which may for example involve autoimmune diseases, angiogenesis, pain, and/or inflammatory diseases.
US08748432B2 Microbiocidal pyrazole derivatives
The present invention provides compounds of formula (I): wherein the substituents are as defined in claim 1, are useful as active ingredients, which have microbiocidal activity, in particular fungicidal activity.
US08748429B2 CGRP receptor antagonists
The disclosure generally relates to the novel compounds of formula I, including pharmaceutically acceptable salts, which are CGRP receptor antagonists. The disclosure also relates to pharmaceutical compositions and methods for using the compounds in the treatment of CGRP related disorders including migraine and other headaches, neurogenic vasodilation, neurogenic inflammation, thermal injury, circulatory shock, flushing associated with menopause, airway inflammatory diseases such as asthma, and chronic obstructive pulmonary disease (COPD).
US08748428B2 Use of a PKC inhibitor
The present invention demonstrates that chronic active BCR signaling through CD79A/B confers a strong dependence on downstream PKCb kinase signaling. Hence, provided herein is a method for inhibiting the growth of B-cell lymphoma having chronic active B-cell-receptor signaling, or inhibiting the growth of cancers with molecular lesions that lead to chronic active BCR signaling, by administering to a patient in need of such treatment a therapeutically effective amount of a PKC inhibitor or a use of a PKC inhibitor to inhibit the growth of B-cell lymphoma having chronic active B-cell-receptor signaling or to inhibit the growth of cancers with molecular lesions that lead to chronic active BCR signaling.
US08748424B2 Triazole compounds that modulate Hsp90 activity
The present invention relates to substituted triazole compounds and compositions comprising substituted triazole compounds. The invention further relates to the use of a substituted triazole compound of the invention, or a composition comprising such a compound in the preparation of a medicament for preventing or treating hyperproliferative disorders, such as cancer, in a subject in need thereof.
US08748421B2 Triazine compounds as P13 kinase and MTOR inhibitors
Compounds of formula I wherein: R1 is and R2, R4, and R6-9 are defined herein, and pharmaceutically acceptable salts and esters thereof. These compounds inhibit PI3 kinase and mTOR, and may be used to treat diseases mediated by PI3 kinase and mTOR, such as a variety of cancers. Methods for making and using the compounds of this invention are disclosed. Various compositions containing the compounds of this invention are also disclosed.
US08748420B2 Pyridinylcarboxylic acid derivatives as fungicides
Pyridinylcarboxylic acid derivatives of the formula (I) in which the symbols A, X, Y1, Y2, Y3, L1, L2, RG and R1 are each as defined in the description, and also salts, metal complexes and N-oxides of the compounds of the formula (I), and the use thereof for controlling phytopathogenic harmful fungi and processes for preparing compounds of the formula (I).
US08748419B2 Treating obesity with muscarinic receptor M1 antagonists
Provided are methods of treating obesity and effecting desired weight loss or preventing undesired weight gain by administration of a preferential muscarinic acetylcholine receptor M1 antagonist, optionally with at least one antidepressant other than a selective muscarinic acetylcholine receptor M1 antagonist. The preferential muscarinic acetylcholine receptor M1 antagonist, optionally can be administered with an anti-obesity agent, for example, an anorexiant. The invention also provides for pharmaceutical compositions and kits for administration of at least one selective muscarinic acetylcholine receptor M1 antagonist in combination with at least one antidepressant other than a selective muscarinic acetylcholine receptor M1 antagonist.
US08748418B2 1,4-oxazepines as BACE1 and/or BACE2 inhibitors
The present invention relates to 1,4-Oxazepines of formula I having BACE1 and/or BACE2 inhibitory activity, their manufacture, pharmaceutical compositions containing them and their use as therapeutically active substances. The active compounds of the present invention are useful in the therapeutic and/or prophylactic treatment of e.g. Alzheimer's disease and type 2 diabetes.
US08748414B2 Statin nanoparticles
The present invention relates to a complex made up of at least one molecule of statin or a derivative thereof, covalently bonded to at least one hydrocarbon radical including at least 18 carbon atoms and containing at least one 2-methyl-buta-2-ene unit, to nanoparticles of such a complex, and to a method for preparing same, said complex and/or said nanoparticles optionally being in the form of a lyophilizate. The present invention also relates to a pharmaceutical composition including at least one complex and/or nanoparticles such as previously defined. The invention finally relates to said complex and/or to said nanoparticles for the treatment and/or prevention of hyperlipemia and hypercholesterolemia.
US08748413B2 Benzoic acid, benzoic acid derivatives and heteroaryl carboxylic acid conjugates of hydrocodone, prodrugs, methods of making and use thereof
The presently described technology provides compositions comprising aryl carboxylic acids chemically conjugated to hydrocodone (morphinan-6-one, 4,5-alpha-epoxy-3-methoxy-17-methyl) to form novel prodrugs/compositions of hydrocodone, including benzoates and heteroaryl carboxylic acids, which have a decreased potential for abuse of hydrocodone. The present technology also provides methods of treating patients, pharmaceutical kits and methods of synthesizing conjugates of the present technology.
US08748403B2 Modulation of HSV infection
Toll-like receptor 2 (TLR2) has been found to mediate certain effects of HSV infection, particularly in neonates. Compounds that decrease TLR2 expression or activity are useful for ameliorating such deleterious effects.
US08748388B2 Antitumoral compounds
Antitumoral compounds of Formula I, and pharmaceutically acceptable salts, derivatives, tautomers, prodrugs or stereoisomers thereof useful as antitumour agents.
US08748386B2 Immunological targeting of pathological Tau proteins
The present invention relates to methods and compositions for treating, preventing, and diagnosing Alzheimer's Disease or other tauopathies in a subject by administering an immunogenic tau peptide or an antibody recognizing the immunogenic tau epitope under conditions effective to treat, prevent, or diagnose Alzheimer's Disease or other tauopathies. Also disclosed are methods of promoting clearance of aggregates from the brain of the subject and of slowing progression of tau-pathology related behavioral phenotype in a subject.
US08748380B2 Albumin variants
The present invention relates to variants of a parent albumin having altered plasma half-life compared with the parent albumin. The present invention also relates to fusion polypeptides and conjugates comprising said variant albumin.
US08748377B2 Pharmaceutical compositions
The present invention provides pharmaceutical compositions comprising at least one polypeptide having GLP-1 activity wherein an effective dose of said pharmaceutical composition comprises 15 mg, 30 mg, 50 mg or 100 mg of said polypeptide having GLP-1 activity. Also provided are methods of administering the pharmaceutical compositions of the invention.
US08748375B2 Methods for affecting body composition using amylin agonists
Methods for affecting body composition include the use of amylin agonists, such as pramlintide or davalintide. Total body weight may be reduced, maintained or even increased; however, the body fat is reduced or body fat gain is prevented, while lean body mass is maintained or increased.
US08748373B2 Hepatitis B virus compositions and methods of use
A polypeptide comprising a preS1 region of hepatitis B virus (HBV), or a fragment thereof, and/or the preS2 region of HBV or a fragment thereof, and methods of use to inhibit virus infection are disclosed. A lentivirus comprising hepatitis B virus (HBV) envelope proteins, or a fragment thereof, and/or the L envelope protein of HBV and/or the M envelope protein of HBV or a fragment thereof, and/or the S envelope protein of HBV or a fragment thereof, and methods of use of this lentivirus HBV pseudovirus as a gene therapy to target hepatocytes for the administration of therapeutic agents are also disclosed.
US08748368B2 Methods for preserving organs and tissues
The invention relates to a method for preserving an organ or tissue comprising contacting the organ or tissue with an effective amount of a kallikrein inhibitor and solutions useful for such a method. Also provided is a method for reducing reperfusion injury of an organ during surgery and/or following removal of the organ from a subject comprising placing the organ in an organ storage and preservative solution, wherein the solution comprises a kallikrein inhibitor.
US08748366B2 Process for the preparation of a spray powder comprising one or more glycine-N,N-diacetic acid derivatives and use of the spray powder for producing compression agglomerates
A process for the preparation of a spray-dried powder containing at least one glycine-N,N-diacetic acid compound of a formula MOOC—CHR—N(CH2COOM)2, where R is a C1-12-alkyl and M is an alkali metal, the process including: preparing an aqueous solution containing the glycine-N,N-diacetic acid compound; concurrently passing the aqueous solution and air into a spray-drying apparatus; atomizing the aqueous solution by feeding the aqueous solution onto a rotating disk or by compressing the aqueous solution with a pump to a pressure of ≧20 bar absolute, to obtain fine liquid droplets; and drying the droplets, to obtain the spray-dried powder, where a temperature gradient between the aqueous solution and the air is in a range from 70 to 350° C., and a content of the glycine-N,N-diacetic acid compound in the aqueous solution is ≧84% by weight, based on a total weight of the dry mass.
US08748359B2 Post-treated additive composition and method of making the same
An oil-soluble lubricating oil additive composition prepared by the process which comprises reacting (A) reacting a copolymer of an (i) an unsaturated acidic reagent; and (ii) a mono-olefin, with at least one linking hydrocarbyl di-primary amine, thereby producing a hybrid succinic anhydride copolymer having from about 10% to about 90% unreacted anhydride groups; and subsequently (B) reacting the hybrid succinic anhydride copolymer with a second amine compound, thereby producing the succinimide; and (C) reacting the succinimide with at least one post-treating agent selected from a cyclic carbonate, a linear mono-carbonate, a linear poly-carbonate, an aromatic polycarboxylic acid, an aromatic polycarboxylic anhydride, an aromatic polycarboxylic acid ester, or mixtures thereof.
US08748357B2 Method for stabilizing diesel engine lubricating oil against degradation by biodiesel fuel
The lubricating oil used to lubricate diesel engines is stabilized against the detrimental degradation effects of biodiesel fuel by the addition to the lubricating oil of an additive concentrate comprising a premix of a first antioxidant, a second antioxidant of a type different from the first and an organometallic compound.
US08748354B2 RNA interactome analysis
A method of sample analysis is provided. In certain cases, the method comprises: a) cross-linking the contents of a cell using a heat stable crosslinking agent to produce cross-linked ribonucleotide complexes; b) fragmenting the cross-linked ribonucleotide complexes to produce complexes comprising protein, RNA fragments and, optionally, genomic DNA fragments; c) contacting the complexes with a plurality of non-overlapping oligonucleotides comprise an affinity tag and that are complementary to a specific target RNA of the cell under high stringency conditions that include high temperature; d) isolating complexes that contain the oligonucleotides using the affinity tag to produce isolated complexes; e) enzymatically releasing the protein, RNA fragments and/or the genomic DNA fragments from the isolated complexes to produce a released component, without reversing the crosslinking; and f) analyzing the released component.
US08748353B2 Identification of antigen or ligand-specific binding proteins
The present invention discloses novel methods for the generation, expression and screening of diverse collections of binding proteins such as antibodies or fragments thereof in vertebrate host cells in vitro, for the identification and isolation of ligand- or antigen-specific binding proteins. The methods disclosed herein allow the expression of diverse collections of binding proteins from at least one vector construct, which optionally can give rise to collections of diverse binding proteins upon transfer and expression into vertebrate host cells in situ.
US08748347B2 Method for combating harmful fungi
The present invention relates to methods, use and compositions for combating harmful fungi and bacteria in plants. More specifically, it relates to methods and compositions for controlling, preventing, or treating plant pathogens using UV filters for combating phytotoxin-producing fungi and/or bacteria, in particular, for combating harmful fungi and/or bacteria producing photodynamically active phytotoxins.
US08748346B1 Composition and use with controlled drop applicators
The present invention relates to the blending of key nutritional and hormonal components for successful application through a controlled drop applicator to satisfy plant requirements for growth. More specifically this invention provides a micronutrient composition for enhancing plant growth made of a mixture of gibberellic acid dissolved in triethanolamine. The gibberellic acids are: Gibberellic acid 4, Gibberellic acid 7, Gibberellic acid 9, Gibberellic acid 12. The gibberellic acids are mixed with kinetin dissolved in an alcohol; tryptophan dissolved in a humic acid solution; and a sufficient amount of a chelating agent.
US08748345B2 Method and composition for improving turfgrass
A method of improving turfgrass quality involves applying onto the turfgrass an effective amount of a composition which has been dissolved or dispersed in water, wherein the composition contains between 0.11 and 0.14 parts by weight of a phthalocyanine compound, preferably Pigment Green 7, per one part by weight of monoalkyl esters of phosphorous acid or salts thereof, preferably fosetyl aluminum or salts thereof.
US08748337B2 Preparation method of multi-metals / activated carbon composites
The present invention relates to a method for preparing a multi-metals/activated carbon composite, more particularly to a method for preparing a multi-metals/activated carbon composite, which is prepared by electrochemical electroplating of an alloy plate comprising at least two metals and activated carbons fixed on a conductive support under a predetermined condition. The multi-metals/activated carbon composite prepared in accordance with the present invention has improved adhesion force and specific surface area than those of a conventional composite obtained by continuously plating activated carbons, in which metal salts are impregnated, or metals and good reactivity due to the introduction of pure metals. Since the composition and content of metals can be controlled accurately, the multi-metals/activated carbon composite is useful as an active material for filters for removing gaseous or liquid pollutants, secondary cells, fuel cells, capacitors, hydrogen storage electrodes, etc.
US08748336B2 Alkoxylation processes and catalysts therefor
A process of contacting an alkylene oxide with 2-methoxy-1-propanol (PM1) in the presence of an oligomeric Schiff base metal complex catalyst is disclosed. Further, a process involving contacting an alkylene oxide with an alkyl alcohol using an oligomeric Schiff base metal complex as a catalyst is also disclosed. Additionally, novel compositions which can be used as catalysts in processes involving the contacting of an alkyl alcohol with an alkylene oxide are also disclosed.
US08748333B2 Surface-modified zeolites and methods for preparing the same
Surface-modified zeolites and methods for preparing surface-modified zeolites are provided. A hybrid polymer formed from a silicon alkoxide and a metal alkoxide, a co-monomer, or both, is contacted with a zeolite suspension. The zeolite suspension comprises a sodium-, an ammonium-, or a hydrogen-form zeolite and a solvent. The hybrid polymer and zeolite suspension are contacted under conditions sufficient to deposit hybrid polymer on external surfaces of the zeolite to form a treated zeolite. Solvent is removed therefrom. The treated zeolite is dried and calcinated to form a dried and calcinated treated zeolite. Forming of the zeolite suspension and the contacting, removing, drying, and calcinating steps are provided in one selectivation sequence to produce a surface-modified zeolite from the ammonium-form zeolite and the hydrogen-form zeolite. If the dried and calcinated treated zeolite is a sodium-form zeolite, the sodium is exchanged with ammonium and then additionally dried and calcinated.
US08748331B2 Biogenic template for enhanced sorption of contaminants
A method of manufacturing a remediation material uses a biogenic material as a substrate and involves preparing the surface of the substrate to enable a chemical reaction, and performing template-driven surface derivatization on the substrate to provide a net positive charge on the substrate. The remediation material may be placed into contact with surface water, ground water, soil, or sediment by at least one of a permeable reactive barrier, direct well injection, or direct introduction of the remediation material into soil or sediment, to remove contaminants from the surface water, ground water, soil, or sediment.
US08748312B2 Method of manufacturing substrate for mounting electronic device
A method of manufacturing a substrate for mounting an electronic device, includes forming at least one through-hole in a plate-shaped substrate body in a thickness direction thereof. An electrode substrate having at least one core on an upper surface thereof is formed such that the at least one core corresponds to the at least one through-hole. The electrode substrate is coupled to the substrate body by inserting the at least one core into the at least one through-hole. A portion of the coupled electrode substrate is removed except for the at least one core.
US08748311B2 Microelectronic devices and methods for filing vias in microelectronic devices
Microelectronic devices and methods for filling vias and forming conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece having a plurality of dies and at least one passage extending through the microfeature workpiece from a first side of the microfeature workpiece to an opposite second side of the microfeature workpiece. The method can further include forming a conductive plug in the passage adjacent to the first side of the microelectronic workpiece, and depositing conductive material in the passage to at least generally fill the passage from the conductive plug to the second side of the microelectronic workpiece.
US08748308B2 Through wafer vias and method of making same
A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The structure includes, a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of to the bottom surface of the substrate, the at least one electrically conductive via electrically isolated from the substrate.
US08748307B2 Use of a protection layer to protect a passivation while etching a wafer
A method for processing a wafer in accordance with various embodiments may include: forming a passivation over the wafer; forming a protection layer over at least a surface of the passivation facing away from the wafer, wherein the protection layer includes a material that is selectively etchable to a material of the passivation; forming a mask layer over at least a surface of the protection layer facing away from the wafer, wherein the mask layer includes a material that is selectively etchable to the material of the protection layer; etching the wafer using the mask layer as a mask; selectively etching the material of the mask layer to remove the mask layer from the protection layer, after etching the wafer; and selectively etching the material of the protection layer to remove the protection layer from the passivation, after selectively etching the material of the mask layer.
US08748305B2 Pad structure for semiconductor devices
A semiconductor device is provided which includes a semiconductor substrate having a plurality of microelectronic elements formed therein; an interconnect structure formed over the substrate, the interconnect structure including metal layers isolated from one another by an inter-metal dielectric, the metal layers including a topmost metal layer; dummy metal vias formed between at least two metal layers and disposed within a region of the interconnect structure; and a bonding pad formed over the topmost metal layer such that the bonding pad is aligned with the region of the interconnect structure.
US08748304B2 Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines
Embodiments of the invention relate to a silicon semiconductor device, and a conductive thick film composition for use in a solar cell device.
US08748300B2 Semiconductor device and method for manufacturing same
According to one embodiment, a semiconductor device includes a substrate, a first stacked body, a memory film, a first channel body, a second stacked body, a gate insulating film and a second channel body. A step part is formed between a side face of the select gate and the second insulating layer. A film thickness of a portion covering the step part of the second channel body is thicker than a film thickness of a portion provided between the second insulating layers of the second channel body.
US08748298B2 Gallium nitride materials and methods associated with the same
Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.
US08748294B2 SOS substrate with reduced stress
There is provided an SOS substrate with reduced stress. The SOS substrate is a silicon-on-sapphire (SOS) substrate comprising a sapphire substrate and a monocrystalline silicon film on or above the sapphire substrate. The stress of the silicon film of the SOS substrate as measured by a Raman shift method is 2.5×108 Pa or less across an entire in-plane area of the SOS substrate.
US08748293B2 Organopolysiloxane, temporary adhesive composition containing organopolysiloxane, and method of producing thinned wafer using the same
The present invention provides a non-aromatic saturated hydrocarbon group-containing organopolysiloxane containing the following units (I) to (III): (I) a siloxane unit (T unit) represented by R1SiO3/2: 40 to 99 mol %; (II) a siloxane unit (D unit) represented by R2R3SiO2/2: 59 mol % or less; and (III) a siloxane unit (M unit) represented by R4R5R6SiO1/2: 1 to 30 mol %. There can be an organopolysiloxane, which is soluble in a nonpolar organic solvent so that the organopolysiloxane can be peeled in a short time, and which is hardly soluble in a polar organic solvent to be exemplarily used upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom so that the organopolysiloxane is not peeled from the supporting substrate upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom.
US08748288B2 Bonded structure with enhanced adhesion strength
A first bonding material layer is formed on a first substrate and a second bonding material layer is formed on a second substrate. The first and second bonding material layers include a metal. Ions are implanted into the first and second bonding material layers to induce structural damages in the in the first and second bonding material layers. The first and second substrates are bonded by forming a physical contact between the first and second bonding material layers. The structural damages in the first and second bonding material layers enhance diffusion of materials across the interface between the first and second bonding material layers to form a bonded material layer in which metal grains are present across the bonding interface, thereby providing a high adhesion strength across the first and second substrates.
US08748287B2 System on a chip with on-chip RF shield
Structures of a system on a chip are disclosed. In one embodiment, the system on a chip (SoC) includes an RF component disposed on a first part of a substrate, a semiconductor component disposed on a second part of the substrate, the semiconductor component and the RF component sharing a common boundary, and a conductive cage disposed enclosing the RF component. The conductive cage shields the semiconductor component from electromagnetic radiation originating from the RF circuit.
US08748282B2 Semiconductor device and method of manufacturing the same
A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching of the inner wall of the hole to proceed specifically in a portion of the insulating interlayer, to thereby form a structure having the first insulating film projected out from the edge towards the center of the hole; forming a lower electrode film as being extended over the top surface, side face and back surface of the first insulating film, and over the inner wall and bottom surface of the hole; filling a protective film in the hole; removing the lower electrode film specifically in portions fallen on the top surface and side face of the first insulating film; removing the protective film; and forming a cylindrical capacitor in the hole.
US08748281B2 Enhanced confinement of sensitive materials of a high-K metal gate electrode structure
When forming sophisticated high-k metal gate electrode structures, the removal of a dielectric cap material may be accomplished with superior process uniformity by using a silicon dioxide material. In other illustrative embodiments, an enhanced spacer regime may be applied, thereby also providing superior implantation conditions for forming drain and source extension regions and drain and source regions.
US08748278B2 Method for fabricating semiconductor device
A method for fabricating a semiconductor device is provided. A fin of a first conductivity type is formed on a substrate of the first conductivity type. A gate is formed on the substrate, wherein the gate covers a portion of the fin. Source and drain regions of a second conductivity type are formed in the fin at respective sides of the gate. A punch-through stopper (PTS) of the first conductivity type is formed in the fin underlying the gate and between the source and drain regions, wherein the PTS has an impurity concentration higher than that of the substrate. A first impurity of the second conductivity type is implanted into the PTS, so as to compensate the impurity concentration of the PTS.
US08748275B2 Semiconductor devices comprising a channel semiconductor alloy formed with reduced STI topography
In sophisticated semiconductor devices, a semiconductor alloy, such as a threshold adjusting semiconductor material in the form of silicon/germanium, may be provided in an early manufacturing stage selectively in certain active regions, wherein a pronounced degree of recessing and material loss, in particular in isolation regions, may be avoided by providing a protective material layer selectively above the isolation regions. For example, in some illustrative embodiments, a silicon material may be selectively deposited on the isolation regions.
US08748271B2 LDMOS with improved breakdown voltage
An LDMOS is formed with a field plate over the n− drift region, coplanar with the gate stack, and having a higher work function than the gate stack. Embodiments include forming a first conductivity type well, having a source, surrounded by a second conductivity type well, having a drain, in a substrate, forming first and second coplanar gate stacks on the substrate over a portion of the first well and a portion of the second well, respectively, and tuning the work functions of the first and second gate stacks to obtain a higher work function for the second gate stack. Other embodiments include forming the first gate stack of a high-k metal gate and the second gate stack of a field plate on a gate oxide layer, forming the first and second gate stacks with different gate electrode materials on a common gate oxide, and forming the gate stacks separated from each other and with different gate dielectric materials.
US08748270B1 Process for manufacturing an improved analog transistor
An analog transistor useful for low noise applications or for electrical circuits benefiting from tight control of threshold voltages and electrical characteristics is described. The analog transistor includes a substantially undoped channel positioned under a gate dielectric between a source and a drain with the undoped channel not being subjected to contaminating threshold voltage implants or halo implants. The channel is supported on a screen layer doped to have an average dopant density at least five times as great as the average dopant density of the substantially undoped channel which, in turn, is supported by a doped well having an average dopant density at least twice the average dopant density of the substantially undoped channel.
US08748263B2 Methods of fabricating a semiconductor device comprising a conformal interfacial layer
In a method of fabricating a semiconductor device, isolation structures are formed in a substrate to define active regions. Conductive structures are formed on the substrate to cross over at least two of the active regions and the isolation structures, the conductive structures extending in a first direction. An interfacial layer is conformally formed on the substrate in contact with the conductive structures. A first insulation layer is provided on the interfacial layer, wherein the first insulation layer is formed using a flowable chemical vapor deposition (CVD) process, and wherein the interfacial layer reduces a tensile stress generated at an interface between the conductive structures and the first insulation layer while the first insulation layer is formed.
US08748262B2 Method of forming an integrated power device and structure
In one embodiment, a vertical power transistor is formed on a semiconductor substrate with other transistors. A portion of the semiconductor layer underlying the vertical power transistor is doped to provide a low on-resistance for the vertical power transistor.
US08748261B2 Method of manufacturing semiconductor device, and semiconductor device
A semiconductor device includes a first-conductivity-type semiconductor layer, a base region of a second-conductivity-type formed in an upper portion of the first-conductivity-type semiconductor layer, first though third trenches penetrating through the base region and reaching to the first-conductivity-type semiconductor layer, the first through third trenches being linked to one another, a source interconnect layer buried in the first through third trenches, the source interconnect layer including a protruding portion, a gate electrode buried in the first trench and the third trench, and formed over the source interconnect layer, a source metal contacting the protruding portion of the source interconnect layer, and a gate metal contacting the gate electrode in the third trench. A contact face between the source metal and the protruding portion at the second trench is formed higher than a contact face between the gate metal and the gate electrode at the third trench.
US08748259B2 Method and apparatus for single step selective nitridation
Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
US08748255B2 Method of manufacturing an electrostatic protection device
One embodiment of an electrostatic protection diode in an integrated circuit includes a base area having at least two bends therein.
US08748254B2 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes forming a bit line on a substrate comprising an active region; forming an interlayer insulating layer covering the bit line on the substrate; forming a first hole at a location of the active region through the interlayer insulating layer; forming a dummy contact layer by filling the first hole; forming a mold layer on the interlayer insulating layer and the dummy contact layer; forming a second hole at a location of the dummy contact layer through the mold layer; removing the dummy contact layer in the first hole through the second hole; forming an epitaxial layer on a portion of the active region, which is exposed at a lower surface of the first hole; and forming a lower electrode on internal surfaces of the first hole and the second hole.
US08748253B1 Memory and logic with shared cryogenic implants
An integrated circuit includes logic circuits of NMOS and PMOS transistors, and memory cells with NMOS and PMOS transistors. A common NSD implant mask exposes source and drain regions of a logic NMOS transistor and a memory NMOS transistor. The source and drain regions of the logic NMOS transistor and the memory NMOS transistor are concurrently implanted at a cryogenic temperature with an amorphizing species followed by arsenic. Phosphorus is concurrently implanted in the source and drain regions of the logic NMOS transistor and the memory NMOS transistor. The source and drain regions of the logic NMOS transistor are further implanted with phosphorus at a non-cryogenic temperature while the memory NMOS transistor is covered by a mask which blocks the phosphorus.
US08748250B2 Method for integration of dual metal gates and dual high-K dielectrics in CMOS devices
The present invention provides a method for integrating the dual metal gates and the dual gate dielectrics into a CMOS device, comprising: growing an ultra-thin interfacial oxide layer or oxynitride layer by rapid thermal oxidation; forming a high-k gate dielectric layer on the ultra-thin interfacial oxide layer by physical vapor deposition; performing a rapid thermal annealing after the deposition of the high-k; depositing a metal nitride gate by physical vapor deposition; doping the metal nitride gate by ion implantation with P-type dopants for a PMOS device, and with N-type dopants for an NMOS device, with a photoresist layer as a mask; depositing a polysilicon layer and a hard mask by a low pressure CVD process, and then performing photolithography process and etching the hard mask; removing the photoresist, and then etching the polysilicon layer/the metal gate/the high-k dielectric layer sequentially to provide a metal gate stack; forming a first spacer, and performing ion implantation with a low energy and a large angle for source/drain extensions; forming a second spacer, and performing ion implantation for source/drain regions; performing a thermal annealing so as to adjust of the metal gate work functions for the NMOS and PMOS devices, respectively, in the course when the dopants in the source/drain regions are activated.
US08748249B2 Vertical structure non-volatile memory device and method of manufacturing the same
A vertical structure non-volatile memory device in which a gate dielectric layer is prevented from protruding toward a substrate; a resistance of a ground selection line (GSL) electrode is reduced so that the non-volatile memory device is highly integrated and has improved reliability, and a method of manufacturing the same are provided. The method includes: sequentially forming a polysilicon layer and an insulating layer on a silicon substrate; forming a gate dielectric layer and a channel layer through the polysilicon layer and the insulating layer, the gate dielectric layer and the channel layer extending in a direction perpendicular to the silicon substrate; forming an opening for exposing the silicon substrate, through the insulating layer and the polysilicon layer; removing the polysilicon layer exposed through the opening, by using a halogen-containing reaction gas at a predetermined temperature; and filling a metallic layer in the space formed by removing the polysilicon layer.
US08748245B1 Semiconductor-on-insulator integrated circuit with interconnect below the insulator
An integrated circuit fabricated on a semiconductor-on-insulator transferred layer is described. The integrated circuit includes an interconnect layer fabricated on the back side of the insulator. This interconnect layer connects active devices to each other through holes etched in the insulator. This structure provides extra layout flexibility and lower capacitance, thus enabling higher speed and lower cost integrated circuits.
US08748243B2 Display device, method for manufacturing display device, and SOI substrate
A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface, and a circuit including a transistor is formed using the single-crystalline semiconductor layers, so that a display device is manufactured. Single-crystalline semiconductor layers separated from a single-crystalline semiconductor substrate are applied to the plurality of single-crystalline semiconductor layers. Each of the single-crystalline semiconductor layers has a size corresponding to one display panel (panel size).
US08748241B2 Semiconductor device and method for manufacturing the same
A first conductive film overlapping with an oxide semiconductor film is formed over a gate insulating film, a gate electrode is formed by selectively etching the first conductive film using a resist subjected to electron beam exposure, a first insulating film is formed over the gate insulating film and the gate electrode, removing a part of the first insulating film while the gate electrode is not exposed, an anti-reflective film is formed over the first insulating film, the anti-reflective film, the first insulating film and the gate insulating film are selectively etched using a resist subjected to electron beam exposure, and a source electrode in contact with one end of the oxide semiconductor film and one end of the first insulating film and a drain electrode in contact with the other end of the oxide semiconductor film and the other end of the first insulating film are formed.
US08748240B2 Method for manufacturing semiconductor device
Oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film are reduced and electric characteristics of a transistor including the oxide semiconductor film are improved. Further, a highly reliable semiconductor device including the transistor including the oxide semiconductor film is provided. In the transistor including the oxide semiconductor film, at least one insulating film in contact with the oxide semiconductor film contains excess oxygen. By the excess oxygen included in the insulating film in contact with the oxide semiconductor film, oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced. Note that the insulating film including the excess oxygen has a profile of the excess oxygen concentration having two or more local maximum values in the depth direction.
US08748239B2 Method of fabricating a gate
A method of fabricating a gate includes sequentially forming an insulation layer and a conductive layer on substantially an entire surface of a substrate. The substrate has a device isolation layer therein and a top surface of the device isolation layer is higher than a top surface of the substrate. The method includes planarizing a top surface of the conductive layer and forming a gate electrode by patterning the insulation layer and the conductive layer.
US08748237B2 Memory device having an integrated two-terminal current limiting resistor
A resistor structure incorporated into a resistive switching memory cell or device to form memory devices with improved device performance and lifetime is provided. The resistor structure may be a two-terminal structure designed to reduce the maximum current flowing through a memory device. A method is also provided for making such memory device. The method includes depositing a resistor structure and depositing a variable resistance layer of a resistive switching memory cell of the memory device, where the resistor structure is disposed in series with the variable resistance layer to limit the switching current of the memory device. The incorporation of the resistor structure is very useful in obtaining desirable levels of device switching currents that meet the switching specification of various types of memory devices. The memory devices may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices.
US08748235B2 Non-volatile anti-fuse with consistent rupture
In an embodiment of the invention, a non-volatile anti-fuse memory cell is disclosed. The memory cell consists of a programmable n-channel diode-connectable transistor. The poly-silicon gate of the transistor has two portions. One portion is doped more highly than a second portion. The transistor also has a source with two portions where one portion of the source is doped more highly than a second portion. The portion of the gate that is physically closer to the source is more lightly doped than the other portion of the poly-silicon gate. The portion of the source that is physically closer to the lightly doped portion of the poly-silicone gate is lightly doped with respect to the other portion of the source. When the transistor is programmed, a rupture in the insulator will most likely occur in the portion of the poly-silicone gate that is heavily doped.
US08748233B2 Integrated circuit packaging system with underfill and method of manufacture thereof
A method of manufacture of an integrated circuit packaging system includes: providing a substrate; attaching a flip chip to the substrate; attaching a heat slug to the substrate and the flip chip; and forming a moldable underfill having a top underfill surface on the substrate, the flip chip, and the heat slug, the moldable underfill having a characteristic of being liquid at room temperature and the top underfill surface over the flip chip.
US08748232B2 Semiconductor device having a through-substrate via
Semiconductor devices are described that include a via that extends only partially through the substrate. Through-substrate vias (TSV) furnish electrical interconnectivity to electronic components formed in the substrates. In implementations, the semiconductor devices are fabricated by first bonding a semiconductor wafer to a carrier wafer with an adhesive material. The semiconductor wafer includes an etch stop disposed within the wafer (e.g., between a first surface a second surface of the wafer). One or more vias are formed through the wafer. The vias extend from the second surface to the etch stop.
US08748229B2 Manufacturing method including deformation of supporting board to accommodate semiconductor device
A semiconductor device includes a supporting board, a first semiconductor element mounted on a main surface of the supporting board; and an electronic component provided between the supporting board and the first semiconductor element; wherein the supporting board includes a concave part formed in a direction separated from the first semiconductor element; and at least a part of the electronic component is accommodated in the concave part.
US08748224B2 Manufacturing method of semiconductor device
A transistor with superior electric characteristics is manufactured. An oxide insulating film is formed over a substrate, an oxide semiconductor film is formed over the oxide insulating film, heat treatment is then conducted at a temperature at which hydrogen contained in the oxide semiconductor film is desorbed and part of oxygen contained in the oxide insulating film is desorbed, then the heated oxide semiconductor film is etched into a predetermined shape to form an island-shaped oxide semiconductor film, a pair of electrodes is formed over the island-shaped oxide semiconductor film, a gate insulating film is formed over the pair of electrodes and the island-shaped oxide semiconductor film, and a gate electrode is formed over the gate insulating film.
US08748219B2 Method and apparatus for super radiant laser action in half wavelength thick organic semiconductor microcavities
The disclosed device is a solid state organic semiconductor VCSEL in which the microcavity is composed of metal and dielectric mirrors and the gain layer is only λ/2n thick. The gain layer comprises a thermally evaporated 156.7 nm thick film of the laser dye DCM doped (2.5% v/v) into an Alq3 host matrix. The microcavity consists of 2 mirrors, a dielectric Bragg reflector (DBR) sputter-coated onto a quartz substrate as the mirror through which the organic gain layer is optically excited and laser emission is collected and a silver mirror that is thermally evaporated on top of the Alq3:DCM film. The device exhibits laser action from the DCM both when the DCM molecules are excited directly at 535 nm and via Förster Resonance Energy Transfer (FRET) from the Alq3 (excited at 404 nm) with laser thresholds of 4.9 μJ/cm2 and 14.2 μJ/cm2 respectively.
US08748217B2 Metal-based solution treatment of CIGS absorber layer in thin-film solar cells
A method for manufacturing a thin film solar cell device includes forming a back contact layer on a substrate, forming an CIGS absorber layer on the back contact layer, treating the CIGS absorber layer with a metal-based alkaline solution, and forming a buffer layer on the CIGS absorber layer where the treatment of the CIGS absorber layer improves the adhesion between the CIGS absorber layer and the buffer layer and also improves the quality of the p-n junction at the CIGS absorber layer/buffer layer interface.
US08748215B2 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming an oxide component over a base component; forming a first oxide crystal component which grows from a surface toward an inside of the oxide component by heat treatment, and leaving an amorphous component just above a surface of the base component; and stacking a second oxide crystal component over the first oxide crystal component. In particular, the first oxide crystal component and the second oxide crystal component have common c-axes. Same-axis (axial) growth in the case of homo-crystal growth or hetero-crystal growth is caused.
US08748202B2 Substrate free LED package
A method of fabricating a substrate free light emitting diode (LED), includes arranging LED dies on a tape to form an LED wafer assembly, molding an encapsulation structure over at least one of the LED dies on a first side of the LED wafer assembly, removing the tape, forming a dielectric layer on a second side of the LED wafer assembly, forming an oversized contact region on the dielectric layer to form a virtual LED wafer assembly, and singulating the virtual LED wafer assembly into predetermined regions including at least one LED. The tape can be a carrier tape or a saw tape. Several LED dies can also be electrically coupled before the virtual LED wafer assembly is singulated into predetermined regions including at the electrically coupled LED dies.
US08748198B2 Method of manufacturing semiconductor device
A focus through a projection lens is corrected to prevent the occurrence of a dimensional error in a pattern due to defocusing. At least one automatic focus correction mark is formed over each of chip patterns formed in a reticle used for exposure. Using one of the automatic focus correction marks located in the center portion of an actual device region, automatic correction of the focus of exposure light is performed. In this manner, a variation in the focus of the exposure light through the center portion of the projection lens, which is more likely to reach a high temperature than an end portion of the projection lens, is detected and corrected.
US08748197B2 Reverse partial etching scheme for magnetic device applications
A magnetic tunnel junction (MTJ) structure is provided over a device wherein the MTJ comprises a tunnel barrier layer between a free layer and a pinned layer; and a top and bottom electrode inside the MTJ structure. A hard mask layer is formed on the top electrode. The hard mask layer, top electrode, free layer, tunnel barrier layer, and pinned layer are patterned to define the magnetic tunnel junction (MTJ) structures. A first dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. Thereafter, the top electrode and free layer are patterned. A second dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. A third dielectric layer is deposited over the MTJ structures and a metal line contact is formed through the third dielectric layer to the top electrode to complete fabrication of the magnetic device.
US08748196B2 Coherent quantum information transfer between topological and conventional qubits
Computing bus devices that enable quantum information to be coherently transferred between topological and conventional qubits are disclosed. A concrete realization of such a topological quantum bus acting between a topological qubit in a Majorana wire network and a conventional semiconductor double quantum dot qubit is described. The disclosed device measures the joint (fermion) parity of the two different qubits by using the Aharonov-Casher effect in conjunction with an ancillary superconducting flux qubit that facilitates the measurement. Such a parity measurement, together with the ability to apply Hadamard gates to the two qubits, allows for the production of states in which the topological and conventional qubits are maximally entangled, and for teleporting quantum states between the topological and conventional quantum systems.
US08748188B2 Method of preparing, storing, transporting and testing chlorine dioxide solutions
Chlorine dioxide solutions are stabilized and prepared for storage, transportation, and testing. Each solution is separated into two samples. Chlorine dioxide is removed from one sample and then each sample is stabilized and prepared such that each sample contains only oxidized and/or reduced forms of chlorine dioxide. The stable samples may be stored, transported, and tested for chlorine dioxide. The samples are tested for the oxidized and/or reduced forms of chlorine dioxide by known methods, and mass balance equations are used to determine the concentration of chlorine dioxide in the original sample before stabilization and preparation.
US08748184B2 Titanium bearing material flow control in the manufacture of titanium tetrachloride with silica content monitoring of the titanium product
This disclosure relates to a process for controlling chlorination reactions in manufacturing titanium tetrachloride in a fluidized bed reactor, followed by processing to form a titanium product comprising an amount of silica, the process comprising: (a) feeding carbonaceous material, titanium bearing material comprising an amount of silica, and chlorine to the fluidized bed reactor to form a gaseous stream, and condensing the gaseous stream to form titanium tetrachloride, a non-condensed gas stream and a condensable product stream; (b) processing the titanium tetrachloride to form a titanium product comprising an amount of silica; (c) analyzing the titanium product comprising an amount of silica to determine the analyzed concentration of silica; (d) identifying a set point concentration of silica; (e) calculating the difference between the analyzed concentration of silica and the set point concentration of silica; and (f) generating a signal which corresponds to the difference calculated in step (e) which provides a feedback response that controls the flow of the titanium bearing material into the fluidized bed reactor.
US08748183B2 Method and apparatus for calibrating a flow cytometer
A method of continuously verifying proper sort calibration in a droplet sorting flow cytometer by selecting a fraction of droplets estimated to have substantially zero probability of containing a particle; applying one charge of a set of charges to the selected droplets in order to form a test stream out of the selected droplets; illuminating the droplets in the test stream; and detecting any light emitted or scattered by any particles in the selected droplets.
US08748179B2 Method for efficient production of induced pluripotent stem cells utilizing cells derived from oral mucosa
A main object of the present invention is to provide a technique to produce iPS cells with less burden on the patient and with high establishment efficiency. iPS cells can be efficiently produced with significantly improved establishment efficiency by selecting cells derived from oral mucosa and introducing, into the cells, reprogramming factors capable of inducing the cells into pluripotent stem cells.
US08748171B2 Cell population enriched for endoderm cells
The present invention provides cell populations that are enriched for mesendoderm and mesoderm, and cell populations that are enriched for endoderm. The cell populations of the invention are useful for generating cells for cell replacement therapy.
US08748167B2 Compact air purifier
An air purifier with a tub capable of containing a liquid. Reactor plates are in the tub wherein the reactor plates provide a curvilinear path for air flow with abrupt directional change. A pump is situated to distribute the liquid onto the reactor plates to form a moist surface. An air inlet brings contaminated air into contact with biocatalyst on the moist surface thereby forming purified air. An air outlet discharges said purified air from the air purifier.
US08748164B2 Delivery system for cell-based therapies
A warm perfusion system that has the ability to support a tissue or organ at a near normal metabolic rate provides the mechanism not only for restored oxidative metabolism of the organ but for the delivery of cells, cell-based therapeutics, and growth and differentiation factors to a damaged tissue or organ. Subsequent to delivery of therapeutic cells, such as stem cells or progenitor cells, to the damaged organ, the cells can be prompted to grow, multiply and differentiate, thereby restoring damaged tissue.
US08748163B2 Method for paper treatment with enzyme
Exemplary embodiments provide methods for treating a xerographic printed substrate with an enzyme solution to increase the surface free energy of the substrate. Other exemplary embodiments provide methods for making an adhesive medium with an enzyme-treated substrate.
US08748158B2 Microorganism having gastric-juice promoting activity, and its secretory product
Designed to afford a novel microorganism promoting gastric juice secretion and having platelet increasing activity, and to afford a pharmaceutical agent composed of a product secreted by the novel microorganism. The novel microorganism, international deposit number: NITE BP-295, belongs to the species Bacillus pumilus, and is characterized by taking either form of coccus and bacillus, and makes figure-eight movement. The novel microorganism of the present invention is the novel microorganism having the gene represented by SEQ ID No: 1, and an object of the present invention is to afford the microorganism and a gastric juice secretion-promoting composition composed of the product secreted by the novel microorganism.
US08748156B2 Animal protein-free media for cultivation of cells
The present invention relates to animal protein-free cell culture media comprising polyamines and a plant- and/or yeast-derived hydrolysate. The invention also relates to animal protein-free culturing processes, wherein cells can be cultivated, propagated and passaged without adding supplementary animal proteins in the culture medium. These processes are useful in cultivating cells, such as recombinant cells or cells infected with a virus, and for producing biological products by cell culture processes.
US08748154B2 Sphingomonas sp. microorganism and method for decomposing methane or odor-producing compounds using the same
The present invention relates to a Sphingomonas sp. MD2 strain (KCTC 11845BP), a composition including the strain for decomposing methane or odor-producing compounds, a biocover or biofilter including the composition, a method for decomposing methane or odor-producing compounds using the composition, a system for decomposing methane or odor-producing compounds using the biocover or biofilter, and the use of the strain for decomposing methane or odor-producing compounds. According to the present invention, methane and odor can be effectively removed concurrently, and thus the cost required for the separate treatment of methane and odor can be reduced, and methane and odor-producing compounds in landfills or the like can be effectively decomposed.
US08748153B2 Biosorbents for the extraction of metals
A biosorbent for removing cationic and/or anionic metals from aqueous solutions, and a process for the production of the biosorbent. The biosorbent includes bacterial aggregates of Bacillus sp. VCHB-10, deposited as NRRL-B-30881, and treated with polyethyleneimine and glutaraldehyde. Among the metals in their cationic form, the following are considered: cations of Ag, Al, Au, Co, Cd, Cu, Cr, Fe, Hg, Mn, Ni, Pb, Pd, Pt, U, Th and Zn. Among the metals in their anionic form, the following are considered: anions of As, Cr and Mo. Removal or recovery of metals from wastewater using the biosorbent is also described.
US08748151B2 Clostridial neurotoxins with altered persistency
The invention relates to a polypeptide comprising: (a) a HC-domain or fragment thereof of the neurotoxic component of a clostridial toxin; and (b) a first LC domain or fragment thereof of the neurotoxic component of a clostridial toxin; and (c) at least one further LC domain or fragment thereof of the neurotoxic component of a clostridial toxin wherein the first and the at least one further LC domain may be the same or different from each other, and wherein each of said fragments of said first and of said at least one further LC domain still exhibits proteolytic activity.
US08748150B2 Phage derived antimicrobial activities
The present invention provides methods and compositions to reduce growth of microbial colonies, including infections, and includes therapeutic compositions, methods for treatment of infections, and methods for identifying additional such compositions.
US08748146B2 Engineered nucleases and their uses for nucleic acid assembly
Aspects of the invention provide engineered endonucleases that are characterized by both a long recognition sequence and specific cleavage outside of the recognition site. Engineered endonucleases of the invention are useful for manipulating long pieces of DNA.
US08748143B2 Ketoreductase polypeptides for the reduction of acetophenones
The present disclosure provides engineered ketoreductase enzymes having improved properties as compared to a naturally occurring wild-type ketoreductase enzyme. Also provided are polynucleotides encoding the engineered ketoreductase enzymes, host cells capable of expressing the engineered ketoreductase enzymes, and methods of using the engineered ketoreductase enzymes to synthesize a variety of chiral compounds.
US08748141B2 Methods and systems for producing ethanol using raw starch and fractionation
The present invention relates to methods for producing high levels of alcohol during fermentation of plant material, and to the high alcohol beer produced. The method can include fractionating the plant material. The present invention also relates to methods for producing high protein distiller's dried grain from fermentation of plant material, and to the high protein distiller's dried grain produced. The method can include drying a co-product by ring drying, flash drying, or fluid bed drying. The present invention further relates to reduced stack emissions from drying distillation products from the production of ethanol.
US08748139B2 Microbial strains and process for the manufacture of biomaterials
DNA constructs and genetically engineered microbial strains constructed using these DNA constructs, which produce a nuclease enzyme with specificity for DNA and/or RNA, are provided. These strains secrete nuclease into the periplasm or growth medium in an amount effective to enhance productivity and/or recovery of polymer, and are particularly suited for use in high cell density fermentation processes. These constructs are useful for modifying microbial strains to improve production and recovery processes for polymers such as intracellular proteins, such as enzymes, growth factors, and cytokines; for producing polyhydroxyalkanoates; and for producing extracellular polysaccharides, such as xanthan gum, alginates, gellan gum, zooglan, hyaluronic acid and microbial cellulose.
US08748129B2 Method for the targeted integration of multiple copies of a gene of interest in a yarrowia strain
This invention concerns a method for the targeted integration of at least three copies of a gene of interest in the genome of a Yarrowia strain including the steps of: (a) cultivating a Yarrowia strain, said strain including a deletion among at least three genes, the phenotype associated with each of these deletions corresponding to an auxotrophy or to a dominant character for this strain; (b) transforming said Yarrowia strain thus obtained with at least three recombinant vectors that include selection markers allowing, for this strain, the complementation of auxotrophy and, potentially, of the dominant character resulting from each of these deletions; and (c) selecting, on a minimum medium, the yeasts having integrated said at least three recombinant vectors. This invention also includes a method for producing a polypeptide of interest using this method as well as a method for obtaining a modified Yarrowia strain including a deletion among at least three genes, the phenotype associated with each of these deletions corresponding to an auxotrophy or to a dominant character for this strain.
US08748126B2 Induction of mucosal tolerance to antigens
Induction of tolerance to antigens by mucosal, preferably oral, delivery of the antigen in combination with an immunomodulating compound producing micro-organism is disclosed. More specifically, Foxp3+ and/or IL-10 and/or TGF-β producing regulatory T-cells are induced which are capable of suppressing undesired immune responses toward an antigen. The antigen is preferably delivered orally in combination with an immunosuppressing cytokine secreting micro-organism.
US08748125B2 Diacylhydrazine ligands for modulating the expression of exogenous genes in mammalian systems via an ecdysone receptor complex
The present invention relates to non-steroidal ligands for use in nuclear receptor-based inducible gene expression system, and a method to modulate exogenous gene expression in which an ecdysone receptor complex comprising: a DNA binding domain; a ligand binding domain; a transactivation domain; and a ligand is contacted with a DNA construct comprising: the exogenous gene and a response element; wherein the exogenous gene is under the control of the response element and binding of the DNA binding domain to the response element in the presence of the ligand results in activation or suppression of the gene.
US08748124B2 Biodegradation process and composition
Disclosed are novel microbial compositions and biodegradation processes to treat marine animal or marine animal by-products to produce solid, liquid and lipid fractions that contain useful compounds.
US08748123B2 Fucose-containing bacterial biopolymer
The presently disclosed subject matter concerns a microbial biopolymer comprising fucose in its composition. This biopolymer consists of a polysaccharide comprising fucose, which represents at least 10% of its composition. This fucose-containing polysaccharide also contains non-sugar components, namely, acyl group substituents. This disclosed subject matter also concerns the process for the production of the biopolymer, which is obtained cultivation of the bacterium Enterobacter A47 (DSM 23139), using glycerol or glycerol-rich mixtures as carbon sources. The fucose-containing biopolymer of the presently disclosed subject matter may be used in several industrial applications (e.g. pharmaceutical, cosmetics and agro-food industries) and in the treatment of industrial wastes (e.g. oil and metal recovery).
US08748121B2 GSH adducts and uses thereof
The invention relates to biomarkers of oxidative stress and their use. Specifically, the invention relates to thiadiazabicyclo-4-oxo-2(E)-nonenal-Glutathione adduct as a biomarker of oxidative stress and its diagnostic use.
US08748115B2 PCSK9 immunoassay
Methods of using PCSK9 antagonists More specifically, methods for measuring circulating PCSK9 levels in a biological sample by means of an immunoassay The immunoassay used can be a solid phase immunoassay, such as a dissociation-enhanced lanthanide fluorescence immunoassay utilizing an E07 capture antibody or coating and a G08 or H23 detecting antibody.
US08748106B2 Methods of identifying a compound that increases or decreases the interaction of Hn-33 with synaptotagmin II
This application is based, inter alia, on the discovery of a binding interaction between the Hn-33 hemagglutinin polypeptide of the type A Clostridium botulinum neurotoxin complex and synaptosomal proteins, including synaptotagmin II (Syt II). Methods of screening for compounds that modulate, e.g., increase or decrease, this interaction are provided. Also provided are compositions and methods for targeting compounds to neuronal and cancer cells by coupling the compounds to Hn-33 or biologically active Hn-33 variants.
US08748105B2 Method for selecting a candidate drug compound
The invention relates to the field of candidate drug testing and drug development. A method is provided for providing a compound composed of at least one molecule attached via at least two linkages to a molecular scaffold, the method comprising providing a scaffold comprising at least a first and a second reactive group; providing at least one molecule capable of reacting with the at least first and second reactive group; contacting the scaffold with at least one molecule to form at least two linkages between the scaffold and the at least one molecule in a coupling reaction, wherein the formation of a linkage accelerates the formation of a consecutive linkage, preferably wherein the coupling reaction is performed in solution, more preferably in an aqueous solution. Furthermore, a method is provided for selecting a candidate drug compound comprising providing a library of compounds according to the invention and determining the binding of a target molecule to the compounds.
US08748103B2 Monitoring health and disease status using clonotype profiles
There is a need for improved methods for determining the diagnosis and prognosis of patients with conditions, including autoimmune disease and cancer, especially lymphoid neoplasms, such as lymphomas and leukemias. Provided herein are methods for using DNA sequencing to identify personalized, or patient-specific biomarkers in patients with lymphoid neoplasms, autoimmune disease and other conditions. Identified biomarkers can be used to determine and/or monitor the disease state for a subject with an associated lymphoid disorder or autoimmune disease or other condition. In particular, the invention provides a sensitive method for monitoring lymphoid neoplasms that undergo clonal evolutions without the need to development alternative assays for the evolved or mutated clones serving as patient-specific biomarkers.
US08748100B2 Methods and kits for selectively amplifying, detecting or quantifying target DNA with specific end sequences
Disclosed herein are methods and kits for selectively amplifying, detecting or quantifying a DNA fragment with a specific end sequence, especially generated following restriction enzyme digestion. This method can be used, for example, to detect a hypomethylated DNA fragment. This methods and kits are especially useful in detecting or quantifying a hypomethylated fetal DNA fragment in a maternal plasma sample containing a corresponding hypermethylated maternal DNA fragment.
US08748097B1 Identification of agents for treating calcium disorders and uses thereof
The present invention provides systems for identifying genes and gene products associated with nitrogenous bisphosphonate treatment (NBP) treatment of calcium disorders. The invention also provides systems for identify and/or characterizing agents in treating calcium disorders. The invention further provides systems for diagnosing a calcium disorder and monitoring treatment of a subject.
US08748091B2 Characterizing stretched polynucleotides in a synthetic nanopassage
Methods of trapping a deformed portion of a double-stranded polynucleotide in a membrane nanopassage are provided. In an aspect, the membrane has a nanopassage that defines a confine region, wherein the membrane separates a first fluid compartment from a second fluid compartment, and the nanopassage is in fluid communication with the first and second compartments. A polynucleotide is provided to the first fluid compartment and optionally a threshold voltage for the membrane and the polynucleotide is determined. A driving voltage across the membrane that is greater than the threshold voltage is applied to force a portion of the polynucleotide sequence into the nanopassage confine region, and decreased to a holding voltage bias to trap the polynucleotide portion in the nanopassage confine region. In particular, at least one nucleotide base-pair is fixably positioned in the nanopassage confine volume. In further embodiments, any of the trapping methods are used to characterize or sequence double stranded DNA.
US08748090B2 Method of screening for binding interaction using sets of microparticles and unique probes
The present invention relates to methods for screening for binding interactions using multiple sets of microparticles, wherein said set has the same identifiable characteristic and wherein one of more sets comprise subsets of microparticles and said subset presents at least one unique probe that acts as a binding partner for a target molecule in a biological sample. In particular, the invention provides for methods of detecting tissue-typing antigens in donor tissue or recipient tissue using these multiple sets of microparticles.
US08748089B2 RNA containing modified nucleosides and methods of use thereof
This invention provides RNA, oligoribonucleotide, and polyribonucleotide molecules comprising pseudouridine or a modified nucleoside, gene therapy vectors comprising same, methods of synthesizing same, and methods for gene replacement, gene therapy, gene transcription silencing, and the delivery of therapeutic proteins to tissue in vivo, comprising the molecules. The present invention also provides methods of reducing the immunogenicity of RNA, oligoribonucleotide, and polyribonucleotide molecules.
US08748085B2 Use of photosensitized Epon epoxy resin 1002F for MEMS and bioMEMS applications
Systems and methods directed to the use 1002F to build microdevices and biomedical devices. Through the addition of a photosensitizing agent, Epon epoxy resin 1002F can be linked in the presence of UV light, making it useful as a photoresist or as a micropatternable structural material. One embodiment comprises combining 1002F monomer resin with a solvent and a photoinitiator, placing the monomer solution on a surface, exposing the monomer solution to UV light through a mask to initiate linking, and stripping the unlinked polymer away. In another embodiment, 3-D structures are built using two or more layers of sensitized monomer films, each having different sensitivity to light, and the use of a mask containing opaque and semi-opaque regions.
US08748083B2 Method for forming wires with narrow spacing
A method for forming wires with a narrow spacing is provided. The method includes the steps of: sequentially forming a first metal layer and a protective layer on a substrate; using a first photomask to pattern the first metal layer and the protective layer, so as to form a first metal line and a patterned protective layer thereon; forming a second metal layer on the substrate and the patterned protective layer; using a second photomask to pattern the second metal layer, so as to form a second metal line adjacent to the first metal line; and removing the patterned protective layer on the first metal line. According to the method, the wires can be located at the same layer with a narrow spacing, thereby avoiding a problem that the wires are easily broken.
US08748080B2 Compositions and processes for photolithography
Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.
US08748079B2 Multiple step printing methods for microbarcodes
A system and method for forming encoded microparticles is described. One embodiment includes a method for forming a microparticle, the method comprising providing a pattern, wherein the pattern defines a code element, printing the pattern on a substrate to form a first code element within a microparticle region, printing the pattern on the substrate to form at least one successive code element, such that the first code element and the at least one successive code element are within the same microparticle region, wherein a code is formed by the first code element and any successive code elements.
US08748069B2 Electrophotographic photoconductor and method for producing same
Provided are an electrophotographic photoconductor that satisfies sufficient wear resistance as well as various characteristics as a photoconductor, and that is little affected by harmful gas or the temperature and humidity environment, and a method for producing such an electrophotographic photoconductor. The electrophotographic photoconductor has at least a photosensitive layer on a conductive substrate. The photosensitive layer contains a diadamantyl diester compound represented by Formula (I) (in Formula (I), R1, R2 and R3 each independently represent a hydrogen atom, a halogen atom, a substituted or unsubstituted C1-C6 alkyl group, a substituted or unsubstituted C1-C6 alkoxyl group, a C6-C20 aryl group or a heterocyclic group; l, m and n each represent an integer from 1 to 4; U and W represent a single bond or a substituted or unsubstituted C1-C6 alkylene group; and V represents an OCO group or a COO group).
US08748068B2 Method of producing patterned birefringent product and birefringent pattern building material
A method of producing a patterned birefringent product, comprising at least steps [1] to [3] in this order: [1] producing a birefringent pattern building material comprising at least one optically anisotropic layer, which is formed by a process including: coating and drying a composition containing at least one rod-like liquid crystalline compound having at least two reactive groups and at least one chiral agent to form a cholesteric liquid crystal phase; and then subjecting the cholesteric liquid crystal phase to heating or exposure to radiation to form the optically anisotropic layer containing a polymer fixed by polymerization and fixing; [2] subjecting the birefringent pattern building material to a patterned exposure to light; and, [3] baking a laminate obtained after the step [2] at 50° C. or higher and 400° C. or lower.
US08748061B2 Method of fabricating wave-shaped mask for photolithography and exposure method of fabricating nano-scaled structure using the wave-shaped mask
A method of fabricating wave-shaped mask is disclosed. The method of fabricating wave-shaped mask comprises the steps of providing an elastomeric transparent substrate comprising an upper surface and a lower surface, applying a stable force to the elastomeric transparent substrate for deforming the elastomeric transparent substrate, forming a light-penetrable thin film layer on the upper surface of the elastomeric transparent substrate, and removing the force applying to the elastomeric transparent substrate, whereby the upper surface of the elastomeric transparent substrate and the light-penetrable thin film layer are in a periodic wave shape and the lower surface of the elastomeric transparent substrate is in a plate shape.
US08748056B2 Anode with remarkable stability under conditions of extreme fuel starvation
A solid oxide fuel cell (SOFC) includes a cathode electrode, a solid oxide electrolyte, and an anode electrode having a first portion and a second portion, such that the first portion is located between the electrolyte and the second portion. The anode electrode comprises a cermet comprising a nickel containing phase and a ceramic phase. The first portion of the anode electrode contains a lower porosity and a lower ratio of the nickel containing phase to the ceramic phase than the second portion of the anode electrode.
US08748055B2 Composite separator for polymer electrolyte membrane fuel cell and method for manufacturing the same
The present invention provides a composite separator for a polymer electrolyte membrane fuel cell (PEMFC) and a method for manufacturing the same. The inventive method involves allowing graphite foil layers to be brought into direct contact with each other when graphite foils are stacked on both sides of a carbon fiber reinforced composite material prepreg, thereby improving electrical conductivity in the thickness direction of the separator.
US08748052B2 Reversible fuel cell
An electricity storage system comprising a reversible fuel cell having a first electrode and a second electrode separated by an ionically conducting electrolyte, and at least two chambers adapted to hold fuel and/or a reaction product, wherein the system is substantially closed and at least one reactant for discharge is hydrogen or oxygen.
US08748050B2 Portable fuel cell power source
Embodiments of the present invention relate to a portable fuel cell power source including an expandable enclosure, a first reactant contained within the enclosure, one or more fuel cells and a fluid port positioned in the expandable enclosure and adapted to be in fluidic communication with the one or more fuel cells. The enclosure may also include an opening to insert a second reactant. When the first reactant is contacted with the second reactant a fuel is generated for use with one or more of the fuel cells. The volume of the portable fuel cell power source in a collapsed state may be smaller than the volume of the amount of first reactant and second reactant needed to substantially consume the first reactant in a fuel generation reaction.
US08748047B2 Method for operating a fuel cell system with a recirculation blower arranged in a fuel circuit thereof
In a method for operating a fuel cell system having recirculation blower arranged in a fuel cell circuit, fuel discharged from the anode exhaust is fed back to the inlet side of the fuel cell system via the recirculation blower. The direction of flow in the fuel return line is reversed in at least a portion of the return line, in an alternating manner.
US08748046B2 Lithium-ion electrolytes with fluoroester co-solvents
An embodiment lithium-ion battery comprising a lithium-ion electrolyte of ethylene carbonate; ethyl methyl carbonate; and at least one solvent selected from the group consisting of trifluoroethyl butyrate, ethyl trifluoroacetate, trifluoroethyl acetate, methyl pentafluoropropionate, and 2,2,2-trifluoroethyl propionate. Other embodiments are described and claimed.
US08748044B2 Li-La-Ti-O composite solid electrolyte material containing silicon and synthesizing method thereof
The invention relates to a lithium lanthanum titanate composite solid electrolyte material containing silicon in which amorphous Si or an amorphous Si compound exist in a grain boundary between crystal grains, and a method of producing the same, and belongs to a field of a lithium ion battery. According to the invention, the amorphous Si or the amorphous Si compound exist in the grain boundary between the crystal grains of the lithium lanthanum titanate. The amorphous Si or the amorphous Si compound are introduced into the grain boundary by employing a wet chemical method. In the wet chemical method, the inexpensive organosilicon compound is used as an additive, and the organosilicon compound is added into the lithium lanthanum titanate solid electrolyte material. Thus, it is possible to synthesize the lithium lanthanum titanate composite solid electrolyte material containing silicon by performing sintering when the ratio of mass of the Si or mass of the Si calculated based on mass of the Si compound to mass of the lithium lanthanum titanate is 0.27% to 1.35%.
US08748040B2 Negative electrode active material for lithium secondary battery and negative electrode for lithium secondary battery
A negative electrode active material for a lithium secondary battery, which includes a composition including Si in an amount of from 30% to 65% by mass of the negative electrode active material, includes a two phase matrix structure including an Sn—Cu based alloy matrix including an Sn content of 50% by mass or more of the Sn—Cu based alloy matrix, Si crystallites dispersed in the Sn—Cu based alloy matrix, and an Si—X based alloy crystallized so as to at least partially cover the Si crystallites, in which X is at least one element selected from Fe, Ni, and Co, and is added in an amount of 1% by mass or more of the negative electrode active material.
US08748038B2 Cathode active material, cathode including the cathode active material, lithium battery including the cathode, and method of preparing the cathode active material
A cathode active material, a cathode including the cathode active material, a lithium battery including the cathode, and a method of preparing the cathode active material, the cathode active material including a lithium-containing metal oxide and an organic material coated on the lithium-containing metal oxide, the organic material including an acrylate or methacrylate organic material including an alkyleneglycol unit.
US08748037B2 Cathode and electrochemical device including cathode
A cathode for use in an electrochemical device, the cathode including a polymer including a backbone, including a polyalkyleneimine-cobalt complex (PEI-Co complex), wherein polyalkyleneimine is coordinated to cobalt; and an electrode material effective for an oxidation-reduction reaction of oxygen, wherein oxygen is a cathode active material.
US08748036B2 Non-aqueous secondary battery
A negative electrode active material of a non-aqueous secondary battery of the present invention includes a first active material, a second active material, and a third active material. The first active material is a carbon material having a D/G ratio of 0.15 or less, where G represents the peak intensity observed in a Raman spectrum from 1578 to 1592 cm−1 and D represents the peak intensity observed in a Raman spectrum from 1349 to 1353 cm−1 of Raman spectroscopy. The D50 of the second active material is 10 μm or less. The second active material includes at least one of a first carbon material having the D/G ratio of 0.2 to 2.0 and a second carbon material having the D/G ratio of 1.0 to 2.0. The D50 of the third active material is 5 μm or less. The third active material contains silicon and oxygen as constituent elements.
US08748034B2 Battery including baffling member including one of projecting portion and recessed portion extending from lid plate
The present invention provides a battery that includes: a lid plate provided with a terminal pull-out through hole and a baffling portion whose upper surface is configured in a projecting and/or recessed manner; an auxiliary terminal configured such that a lower portion thereof is connected to a metallic foil of a power generating element by being fitted into a battery container through the terminal pull-out through hole, and sealed and fixed to the lid plate by insulating and sealing members; a connecting conductor connected and fixed to an upper portion of the auxiliary terminal; and an external terminal having a bolt portion that projects upward from a base portion, the bolt portion being inserted through the terminal through hole of the connecting conductor from below, and the base portion being engaged with the baffling portion of the lid plate, thereby restricting rotation centering an axial line of the bolt portion.
US08748033B2 Battery pack exhibiting improved insulation performance and assembly productivity
A battery pack is provided. The battery pack comprises a bare cell, a protective circuit board electrically connected to the bare cell to control the charge/discharge of the bare cell, a secondary protective device connected between the bare cell and the protective circuit board and installed on one surface of the bare cell, and an insulating member disposed on the one surface of the bare cell and having a width greater than that of the secondary protective device. Due to this construction, the insulation performance of the secondary protective device is improved and the assembly of the insulating member is facilitated.
US08748032B2 Cable-type secondary battery
Provided is a cable-type secondary battery including an anode current collector having a horizontal cross section of a predetermined shape and extending longitudinally, an anode active material pattern layer having anode active material patterns spaced away at a predetermined interval on the anode current collector, an electrolyte layer surrounding the anode active material pattern layer and serving as an ion channel, a cathode active material pattern layer having cathode active material patterns spaced away at a predetermined interval on the electrolyte layer at locations corresponding to those of the anode active material patterns, and a cathode current collector surrounding the cathode active material pattern layer.The cable-type secondary battery having the active material patterns has excellent flexibility to prevent the active material from falling off from the active material layer.
US08748030B2 Secondary battery
A battery includes a housing, the housing including an opening, an electrode assembly, the electrode assembly being disposed in an interior space of the housing, and a short-circuiting member including a first plate and second plate disposed proximate to the first plate, the first plate having an inverting portion and an edge portion, the inverting portion projecting toward an interior space of the housing, the edge portion including a fixed portion that is fixed to a periphery of the opening, and a recess in a surface of the edge portion that faces the interior space, at least a part of the recess overlapping the periphery of the opening.
US08748024B2 Battery
A battery comprises a battery housing and an electrode which is accommodated in the battery housing. Outer faces of the battery housing substantially form the shape of a hollow body which has an accommodation space for accommodating at least a substantial portion of a device which is to be supplied with power by the battery. An outer casing surface of the battery housing can therefore form a portion of a housing of the device. Since the battery housing protects both the active portion of the battery enclosed therein and the components of the device accommodated in the accommodation space of the battery, and a separate device housing and battery housing can therefore be largely avoided, there is a resultant saving in weight and volume. The freedom of design for devices which are provided with batteries is also increased.
US08748016B2 Coated bodies made of metal, hard metal, cermet, or ceramic, and method(s) for coating of such bodies
The invention relates to coated bodies made of metal, hard metal, cermet or ceramic material, coated with a single- or multi-layer coating system containing at least one hard material composite coating, and to a method for coating such bodies. The aim of the invention is to develop a coating system for such bodies, which is single- or multi-layered and comprises at least one hard material composite coating, which contains cubic TiAlCN and hexagonal AlN as the main phases and is characterized by a composite structure having a smooth, homogeneous surface, high oxidation resistance and high hardness. The aim includes the development of a method for cost-effectively producing such coatings. The hard material composite coating according to the invention contains cubic TiAlCN and hexagonal AlN as main phases, wherein the cubic TiAlCN is microcrystalline fcc-Ti1-xAlxCyNz where x>0.75, y=0 to 0.25 and z=0.75 to 1 having a crystallite size of ≧=0.1 μm, and wherein the composite coating in the grain boundary region additionally contains amorphous carbon having a percent by weight of 0.01% to 20%. The coating is carried out according to the invention in a LPCVD process at temperatures between 700° C. and 900° C. and at pressures between 102 Pa and 105 Pa without additional plasma excitation. The hard material composite coating according to the invention is characterized by a composite structure having a smooth, homogeneous surface, high oxidation resistance and high hardness and can be used in particular as a wear protection coating on Si3N4 and WC/Co indexable inserts and steel components.
US08748015B2 Indenofluorenedione derivative, material for organic electroluminescent element, and organic electroluminescent element
An indenofluorenedione derivative having a specific structure, which is useful as a material for organic electroluminescence devices because the derivative is excellent in heat resistance and can be vapor-deposited on a substrate at moderate temperature. An organic electroluminescence device including an anode, a cathode, and an organic thin layer between the anode and the cathode, which contains the material for organic electroluminescence devices in the organic thin layer, is driven at a low driving voltage and has a long lifetime.
US08748013B2 Electroluminescent device
An electroluminescent element which includes host materials and guest materials in a part of an electroluminescent layer. Device characteristics (luminous efficiency, luminous characteristics, or the like) of an electroluminescent element are improved by using host materials and guest materials which have a common skeleton (represented by the following general formula) for an electroluminescent layer interposed between a pair of electrodes in the electroluminescent element. In the common skeleton, X1 to X3, each of which may be the same or different, are individually a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy group, an acyl group, a nitro group, a cyano group, an amino group, a dialkylamino group, a diarylamino group, a vinyl group which may have a substituent, an aryl group which may have a substituent, or a heterocyclic group which may have a substituent.
US08748011B2 Ruthenium carbene complexes for OLED material
Neutral ruthenium(II) complexes having at least one bidentate carbene coordinated to the ruthenium through a ruthenium-carbene bond are provided. Also provided are organic light emitting devices comprising the ruthenium(II) carbene complexes.
US08748009B2 Material, method for producing a material and use thereof
The present invention relates to a material including a matrix and at least one reinforcing element introduced therein, wherein the matrix is selected from the group consisting of plastic, carbon, ceramic, glass, clay, metal, and combinations thereof, and the reinforcing element is spherical to ellipsoidal in shape and has an onionskin-like structure. The present invention further relates to a method for producing a material including steps preparing at least one spherical to ellipsoidal reinforcing element having an onionskin-type structure, and introducing the reinforcing element into a matrix, wherein the matrix is selected from the group consisting of plastic, carbon, ceramic, glass, clay, metal, and combinations thereof. The present invention further relates to use of the material in a friction application, as abrasion protection, an injection molding part, a support plate, catalyst substrate or as bone replacement material.
US08748005B2 PCB protecting cover, LCD device, and method for manufacturing PCB protecting cover
The invention provides a PCB protective cover, an LCD device, and a method for manufacturing a PCB protective cover. The PCB protecting cover is made of an antistatic paper material. The invention provides a novel paper PCB protecting cover. The PCB protecting cover has the advantages of good mechanical strength, simple processing, and low cost, and has antistatic ability because of being added with an antistatic material, thereby greatly reducing the cost of the PCB protecting cover when satisfying the function requirement of the PCB protecting cover, and improving the overall competitiveness of the LCD device.
US08748003B2 Gas barrier laminate and production method of the same
A gas barrier laminate comprising a substrate having thereon at least a gas barrier layer and a polymer layer, wherein at least one polymer layer is provided adjacent to at least one gas barrier layer; and an average carbon content of the polymer layer at a contact interface between the gas barrier layer is lower than an average carbon content in the polymer layer.
US08748002B2 Tempered glass and glass
A tempered glass of the present invention includes, as a glass composition, in terms of mass %, 45 to 75% of SiO2, 0 to 30% of Al2O3, and 0 to 30% of Li2O+Na2O+K2O and has a β-OH value of 0.3 to 1/mm.
US08748001B2 Substrate with hard coat film and coating solution for forming hard coat film comprising core-shell composite oxide surface-treated with an organic silicon compound
Modified zirconia fine particles which are stable in an acidic region as well as in an alkaline region, and which may be readily adjusted in refractive index in a predetermined range are disclosed. Also disclosed is a substrate with a hard coat film excellent in adhesiveness with the substrate, abrasion resistance, scratch strength, pencil hardness and the like without interference fringes and a coating solution which may form the hard coat film. The substrate with a hard coat film is composed of composite oxide particles formed on at least one surface of the substrate and a matrix component, wherein the composite oxide particles are composite oxide particles having a core-shell structure composed of a core formed from zirconium oxide and a shell formed from antimony pentoxide and/or silica.
US08747998B2 Coated article and method for making the same
A coated article is described. The coated article includes an aluminum or aluminum alloy substrate and a compound corrosion resistant layer formed on the substrate. The compound corrosion resistant layer includes a plurality of first non-crystalline films and an equal number of second non-crystalline films. Each the first non-crystalline film interleaves with each the second non-crystalline film. The first non-crystalline film is an aluminum nitride film or an aluminum oxide film. The second non-crystalline film is a silicon nitride film or a silicon dioxide film. A method for making the coated article is also described.
US08747997B2 Coating composition including fluorescent material for producing secure images
A coating composition, system, and method for printing documents that are difficult to chemically or physically forge and that are easy to visually verify are disclosed. The system includes a substrate, a toner, including a colorant and a dye, a coating including fluorescent material, e.g., a primary migration-enhancing coating, applied using an offset printing process and optionally a secondary migration-enhancing coating applied using an offset printing process. An image formed using the toner of the invention is readily verified by comparing a colorant-formed image and a dye-formed image and/or to a reverse negative imaged formed by the dye quenching the fluorescent material. In addition, if a solvent is used in an attempt to alter the printed image on the substrate, the dye migrates or diffuses to indicate tampering with the document.
US08747990B2 Coated tool
A coated tool is excellent in adhesiveness of film, wear resistance, crater resistance and chipping resistance. The coated tool has a substrate and a coating coated on the surface thereof, at least one layer of the coating being an α-type aluminum oxide film, an average film thickness of the α-type aluminum oxide film being about 0.5 to about 10 μm, an average grain size of the α-type aluminum oxide film being about 0.5 to about 1.5 μm, and a texture coefficient TCA(012) of (012) plane of the α-type aluminum oxide film and a texture coefficient TCA(104) of (104) plane of the α-type aluminum oxide film satisfying TCA(104)/TCA(012)≧2.0.
US08747988B2 Glued composite plastic part, method for the production thereof, and part made therefrom
The invention relates to a composite plastic part consisting of a plastic part (1) that has a rib structure (2), and (a) profiled support(s) (4) which is/are glued to the ribs and the longitudinal edge of which is arranged vertically or nearly vertically on the plastic base. The invention further relates to a method for producing such a composite part and finished products containing such composite parts as components.
US08747986B2 Gas-barrier heat-seal composite films and vacuum insulation panels comprising the same
A gas-barrier heat-seal composite film is provided. The gas-barrier heat-seal composite film includes a heat-seal layer including very low density polyethylene (VLDPE), low density polyethylene (LDPE), linear low density polyethylene (LLDPE), high density polyethylene (HDPE), metallocene polyethylene (mPE), metallocene linear low density polyethylene (mLLDPE), ethylene vinyl acetate (EVA) copolymer, ethylene-propylene (EP) copolymer or ethylene-propylene-butene (EPB) terpolymer, and a gas-barrier layer formed on the heat-seal layer, wherein the gas-barrier layer includes a plurality of composite layers, each including a polymer substrate and a single layer or multiple layers of metal or oxide thereof which is formed on one side or both sides of the polymer substrate, and the polymer substrate includes uniaxial-stretched or biaxial-stretched polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyimide (PI), ethylene/vinyl alcohol (EVOH) copolymer or a combination thereof. The invention also provides a vacuum insulation panel including the composite film.
US08747985B2 Optical recording medium
An optical recording medium including a substrate and two or more recording layers that contain Pd, O, and M (M comprises at least one of Zn, Al, In, and Sn), where O is contained in an amount greater than a stoichiometric composition thereof when M is completely oxidized (into ZnO, Al2O3, In2O3, and SnO2). An nth recording layer of the two or more recording layers, as counted from an opposite side of an incident side of recording light, has a Pd content that is less than that of an (n−1)th recording layer.
US08747984B2 Optical recording medium
An object of the present invention is to provide a recordable optical recording medium whose characteristics do not deteriorate when recording is conducted in a high-temperature environment. The present invention provides a recordable optical recording medium comprising a substrate as well as at least a reflection layer, recording layer and light transmission layer provided on the substrate, wherein the recording layer of said optical recording medium contains (a) an azo metal complex dye and (b) ionic organic compound containing a heteroaromatic quaternary ammonium ion.
US08747980B2 Hollow fiber apparatus and use thereof for fluids separations and heat and mass transfers
A hollow fiber device includes a hollow fiber bundle, comprising a plurality of hollow fibers, a first tubesheet and a second tubesheet encapsulating respective distal ends of the hollow fiber bundle. The tubesheets have boreholes in fluid communication with bores of the hollow fibers. In at least one of the tubesheets, the boreholes are formed radially. The hollow fiber device can be utilized in heat exchange, in gas/gas, liquid/liquid and gas/liquid heat transfer, in combined heat and mass transfer and in fluid separation assemblies and processes. The design disclosed herein is light weight and compact and is particularly advantageous when the pressure of a first fluid introduced into the bores of hollow fibers is higher than the pressure on the shell side of the device.
US08747979B2 Coating compositions and articles coated therewith
The present invention relates to a binder useful in coating end uses. The binder preferably includes an aqueous polymer dispersion and a vinyl polymer. The binder is useful in packaging coatings, including coatings for use on food or beverage cans, or a portion thereof.
US08747975B2 Seamless can and method for printing on seamless can
A seamless can in which an ink layer is transferred onto a can body thereof by a curved surface printing is provided. The ink layer which has been transferred has an overlapping portion which is formed by mutually overlapping a front-end portion of the ink layer and a rear-end portion of the ink layer in a circumferential direction of the can body. An ink area ratio for at least one of the front-end portion and the rear-end portion is smaller than an ink area ratio of an intermediate portion of the ink layer which is adjacent to and continuous with the overlapping portion and excludes the overlapping portion.
US08747970B2 Eco-friendly poly(alkylene carbonate) resin composition for high-transparency and high-gloss sheet
Provided is an eco-friendly poly(propylene carbonate) resin composition for a sheet, which is characterized by using a poly(alkylene carbonate) resin developed by efficiently utilizing carbon dioxide, which is a major contributor to global warding, as a main material, and including appropriate additives, such as, a strength modifier, and a flexibilizer, thereby completely solving environmental hazards controversy of the existing polyvinyl chloride resin products; exhibiting excellent mechanical and thermal properties, processability, post processability (printability, embossing and surface treatment, laminating characteristics) and superior anti-flaming property (low smoke density) and elongation characteristics as compared with the existing polyvinyl chloride resin products; and overcoming an extruding production method which is a small-sized production manner, corresponding to a big defect in thermoplastic plastics emerged as substitutes for polyvinyl chloride resin products and thus applying a calendering process method which is a mass production manner.
US08747969B2 Coated films for inkjet printing
Provided are coated films suitable for inkjet printing applications using UV-curable inkjet ink. The films are coated with cationically stabilizable emulsion polymers. The emulsion polymers contain cationically stabilizable amino-functional polymers. Also provided is a method of printing with a UV-inkjet printer comprising jetting UV-curable inkjet ink onto the coated film substrate to form an ink printed image.
US08747966B2 Optical element
An optical element and a stereoscopic image display device are provided. The optical element is a light-dividing element, for example an element that can divide incident light into at least two kinds of light having different polarized states. Therefore, the optical element can be used to realize a stereoscopic image.
US08747963B2 Apparatus and method for diamond film growth
An apparatus and methods for forming a diamond film, are provided. An example of an apparatus for forming a diamond film includes an electrodeless microwave plasma reactor having a microwave plasma chamber configured to contain a substrate and to contain a reactant gas excited by microwaves to generate a microwave plasma discharge. Gas injection ports extend through an outer wall of the plasma chamber at a location upstream of the plasma discharge and above the substrate. Gas jet injection nozzles interface with the gas injection ports and are configured to form a directed gas stream of reactant gas having sufficient kinetic energy to disturb a boundary layer above an operational surface of the substrate to establish a convective transfer of the film material to the operational surface of the substrate.
US08747959B2 Planar patterned transparent contact, devices with planar patterned transparent contacts, and/or methods of making the same
Certain examples relate to improved methods for making patterned substantially transparent contact films, and contact films made by such methods. In certain cases, the contact films may be patterned and substantially planar. Thus, the contact films may be patterned without intentionally removing any material from the layers and/or film, such as may be required by photolithography. In certain example embodiments, an oxygen exchanging system comprising at least two layers may be deposited on a substrate, and the layers may be selectively exposed to heat and/or energy to facilitate the transfer of oxygen ions or atoms from the layer with a higher enthalpy of formation to a layer with a lower enthalpy of formation. In certain cases, the oxygen transfer may permit the conductivity of selective portions of the film to be changed. This advantageously may result in a planar contact film that is patterned with respect to conductivity and/or resistivity.
US08747957B2 Component having coating and coating method
A coating method wherein in order to simplify the coating method and increase the flexibility thereof with respect to respective desired coatings, provision is made that a powder lacquer layer (3) is applied to a surface (2) of the component (1), and an imprint (4) is applied to the powder lacquer layer (3), preferably by an inkjet method.
US08747950B2 Method of mitigating ice build-up on a substrate
The present invention is directed to a method of mitigating ice build-up on a substrate, comprising applying to the substrate applying to the substrate a curable film-forming composition comprising: (a) a resinous component comprising: (i) a polyepoxide; (ii) a polysiloxane; and (iii) an organooxysilane; (b) a polyamine and/or an aminosilane; (c) at least one additional polysiloxane different from the polysiloxane of (ii) above, and (d) optionally a catalyst. The film-forming compositions can be applied directly to the surface of the substrate or onto a primer coat on the substrate.
US08747949B2 Coating and developing system, method of controlling coating and developing system and storage medium
A coating and developing system includes a cassette station, a processing station and an inspection station interposed between the cassette station and the processing station. Time for which a substrate is held uselessly in the inspection module is reduced. A substrate carrying means disposed in the inspection module places priority to transferring a substrate between the cassette station and the processing station, and transfers a substrate to an inspection module in a part of a cycle time in which a substrate carrying means disposed in the processing station carries out one carrying cycle. It is permitted to carry out a substrate from the inspection module in a skip carrying mode, in which a substrate specified by a larger ordinal numeral is carried ahead of a substrate specified by a smaller ordinal numeral. It is inhibited to carry a substrate to the inspection module in the skip carrying mode.
US08747948B2 Deposition apparatus
A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.
US08747947B2 Graphene defect alteration
Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.
US08747945B2 Method for coating a metallic substrate with a powder coating composition and an autodepositable coating composition
A method for coating a metallic substrate includes applying a powder coating composition to a majority of a surface of the metallic substrate, and applying an autodepositable coating composition to less than the majority of the surface of the metallic substrate. According to a preferred embodiment, the powder coating composition is applied to at least one continuous surface of the metallic substrate, while the autodepositable coating composition is applied to at least one discontinuous surface, such as an edge, of the metallic substrate.
US08747944B2 Method of manufacturing transfer sheet and transfer sheet
A method of manufacturing transfer sheet is provided. The method includes forming a colored toner image on a sheet-like base material based on objective image data. The sheet-like base material has releasability. The method further includes defining an image area on the sheet-like base material based on the objective image data. The image area includes the colored toner image. The method further includes forming a transparent toner layer on the image area. The method further includes forming an adhesive layer on the transparent toner layer. The adhesive layer has hot-melt property.
US08747939B2 Nutrient composition
The present invention relates to a nutrient composition which contains at least a carbohydrate, a lipid, a protein, and a mineral, and is liquid or semisolid, characterized in that the volume-based median size (d50) of particles in the nutrient composition is 5 to 100 μm and water-insoluble particles having a protein insolubilized by a divalent cation are contained as a major component of the nutrient composition, or a nutrient composition which contains at least a carbohydrate, a lipid, a protein, and a mineral, and is liquid or semisolid, characterized in that water-insoluble particles having a protein insolubilized by a divalent cation are contained as a major component of the nutrient composition and the mass of the protein with respect to the total moles of divalent ions forming the water-insoluble particles is 1.5 to 3 g/mmol.
US08747937B2 Concentrated coffee extract
Provided is a concentrated coffee extract solution having a rich sweet aroma and a clear aftertaste. The concentrated coffee extract solution contains the following components (A) and (B): (A) at least one pyrazine selected from 2-methylpyrazine, 2,5-dimethylpyrazine, 2,6-dimethylpyrazine, ethylpyrazine, 2-ethyl-5-methylpyrazine, 2-ethyl-6-methylpyrazine, 2-ethyl-3-methylpyrazine, 2-ethyl-3,5-dimethylpyrazine and 3,5-dimethyl-2-methylpyrazine, and (B) at least one guaiacol selected from guaiacol, 4-ethylguaiacol and 4-vinylguaiacol. A content weight ratio [(B)/(A)] of the component (B) to the component (A) is 0.6 or smaller.
US08747927B2 Topical skin care formulations comprising jaboticaba and cashew fruit pulps and extracts thereof
Disclosed are compositions and corresponding methods of their use that include jaboticaba fruit pulp and/or cashew fruit pulp or extracts thereof.
US08747924B2 Methods for preventing and treating neurodegenerative diseases
The present invention provide a method for the prevention and treatment of a neurodegenerative disease including Alzheimer's Disease, Huntington's Disease, and Parkinson's Disease, using a grape seed extract or one or more compounds derived therefrom. In particular, the present invention provides a method to treat a patient diagnosed with, or at the risk of developing, a neurodegenerative disease by administering a pharmaceutical composition comprising a grape seed extract or one or more compounds derived therefrom to the patient in a therapeutic amount to reduce the accumulation, aggregation or deposition of amyloid beta or its oligomers, and/or to reduce the misfolding, accumulation and/or aggregation of tau proteins or other proteins.
US08747923B2 Methods for improving health in canines
A method of improving health in a canine includes administering to the canine a nutritional supplement comprising an amino acid secretagogue composition, which stimulates the pituitary gland of the canines to produce growth hormone. The nutritional supplement may be administered orally. The nutritional supplement may comprise L-arginine hydrochloride, Oxo-proline, L-lysine hydrochloride, and cysteine. When desired, the nutritional supplement may consist essentially of L-arginine hydrochloride, Oxo-proline, L-lysine hydrochloride, N-acetyl-L-cysteine, L-glutamine, and schizonepeta powder.
US08747922B2 Methods and compositions for increasing sex steroids and growth hormones
Embodiments of the invention generally relate to methods and supplements for increasing sex steroids and human growth hormone in a human being.
US08747919B2 Pharmaceutical composition and method of preparing same
An object of the present invention is to provide a pharmaceutical composition comprising an enzyme-treated human serum which is useful for treatment and prevention of diseases such as a cancer and an infectious disease, and a method of preparing the same. The present invention relates to a method of preparing a pharmaceutical composition comprising an enzyme-treated human serum, comprising a step of bringing the human serum into contact with β-galactosidase and, to a pharmaceutical composition comprising an enzyme-treated human serum obtained by the preparation method.
US08747913B2 Herbal extract pharmaceutical composition and method for treating and/or preventing of hyperlipidemia and processes for producing the same
A pharmaceutical composition consisting of Radix Polygoni Multiflori extract, Salviae Miltiorrhizae extract, Fructus Crataegi extract and Radix Notoginseng extract is described, wherein the composition optionally contains a pharmaceutical carrier. Processes for producing the composition and methods for treating and/or preventing hyperlipidemia, treating and/or preventing fatty liver and lowering blood lipid level by administration of the pharmaceutical composition are also disclosed.
US08747909B2 Micronized wood preservative formulations
The present invention provides wood preservative compositions comprising micronized particles. In one embodiment, the composition comprises dispersions of micronized metal or metal compounds. In another embodiment, the wood preservative composition comprises an inorganic component comprising a metal or metal compound and organic biocide. When the composition comprises an inorganic component and an organic biocide, the inorganic component or the organic biocide or both are present as micronized particles. When compositions of the present invention are used for preservation of wood, there is minimal leaching of the metal and biocide from the wood.
US08747907B2 Anti-inflammatory, radioprotective, and longevity enhancing capabilities of ceriumoxide nanoparticles
The present invention provides cerium oxide nanoparticles for use both in therapeutic compositions in vivo and in research in vitro. The cerium oxide nanoparticles are of known range of sizes having biological properties that are reproducible and beneficial. Pharmaceutical and other compositions are provided, as are methods of treatment.
US08747905B2 Therapeutic use of CD31 expressing cells
As described below, the present invention features compositions and methods related to the isolation, culture and therapeutic use of CD31-expressing cells.
US08747903B2 Composition for nucleic acid delivery using metal nanoparticles and preparing method thereof
The present invention relates to a composition for nucleic acid delivery and a method for preparing the same, more particularly to a composition for nucleic acid delivery having excellent stability in the body environment and excellent intracellular delivery efficiency of nucleic acid, and enabling target directed delivery of nucleic acid, and a method for preparing the same.
US08747899B2 Injectable in situ self-forming mineral-polymer hybrid composition and uses thereof
Self-forming hybrid compositions consisting in admixed liquid and solid components enable the formation of bio-materials. The present invention proposes a) a thermo-sensitive self-forming liquid component, being water-based and containing at least a polycationic polymer such as chitosan, and an organic mono-phosphate source, which is a solution at a pH ranging from 6.5 to 7.4; b) a solid component being mineral and composed of at least one of calcium, fluoride, strontium, carbonate and phosphate salts. Solid mineral salts preferentially have a recognized bioactive potential such as the calcium phosphate salts for bones. Both solid and liquid components are admixed to form an injectable liquid slurry or pre-gelled paste that turn in situ into a hybrid uniform gel-like bio-material.
US08747898B2 Controlled release oral dosage form
A once a day bupropion salt formulation is disclosed.
US08747894B2 Effervescent compositions containing N-acetylcysteine
Effervescent pharmaceutical compositions containing a high amount of N-acetylcysteine and a method of treating acetaminophen poisoning with effervescent pharmaceutical compositions containing a high amount of N-acetylcysteine are described.
US08747892B2 Preparation of a lipid blend and a phospholipid suspension containing the lipid blend
The present invention describes processes for the preparation of a lipid blend and a uniform filterable phospholipid suspension containing the lipid blend, such suspension being useful as an ultrasound contrast agent.
US08747886B2 Nanoimprinting of silk fibroin structures for biomedical and biophotonic applications
The present invention provides for photonic nanoimprinted silk fibroin-based materials and methods for making same, comprising embossing silk fibroin-based films with photonic nanometer scale patterns. In addition, the invention provides for processes by which the silk fibroin-based films can be nanoimprinted at room temperature, by locally decreasing the glass transition temperature of the silk film. Such nanoimprinting process increases high throughput and improves potential for incorporation of silk-based photonics into biomedical and other optical devices.
US08747884B2 Nasolacrimal drainage system implants for drug therapy
An implant for insertion through a punctum and into a canalicular lumen of a patient. The implant includes a matrix of material, a therapeutic agent dispersed in the matrix of material, a sheath disposed over a portion of the matrix of material and configured to inhibit the therapeutic agent from being released from the matrix of material into the canalicular lumen and to allow the therapeutic agent to be released from a surface of the matrix of material to a tear film, and a retention structure configured to retain the implant within the canalicular lumen.
US08747883B2 Medical item for long term drug release
Polymeric articles capable of releasing drugs at therapeutic levels over extended periods of time, and methods for producing the extended release articles.
US08747881B2 Intraluminal medical devices in combination with therapeutic agents
Medical devices may be coated to minimize or substantially eliminate a biological organism's reaction to the introduction of the medical device to the organism. The medical devices may be coated with any number of biocompatible materials. Therapeutic drugs, agents or compounds may be mixed with the biocompatible materials and affixed to at least a portion of the medical device. In addition, these therapeutic drugs, agents and/or compounds may be utilized to promote healing, including the formation of blood clots. In addition, various polymer combinations may be utilized to control the elution rates of the therapeutic drugs, agents and/or compounds from the implantable medical devices.
US08747872B2 Nanoemulsion therapeutic compositions and methods of using the same
The present invention relates to methods and compositions for treating pulmonary infection. In particular, the present invention provides nanoemulsion compositions and methods of using the same to treat bacteria associated with biofilms (e.g., found in pulmonary infections). Compositions and methods of the present invention find use in, among other things, clinical (e.g. therapeutic and preventative medicine), industrial, and research applications.
US08747871B2 Synergistic matrix composite for making stable microemulsions of active ingredients
What is described herein is a synergistic matrix composite for making a stable microemulsion in water of an active ingredient comprising a first matrix composition including by wt. (a) 5-30% of a C8-C18 N-alkyl pyrrolidone, (b) optionally, 5-60% of a water insoluble organic solvent soluble therein, (c) 30-70% of a non-ionic emulsifier, and (d) 1-15% of an EO/PO/EO copolymer, and, (e) optionally, 1-5% of a surface active buffering agent, e.g. a branched alkyl ethoxylated phosphate ester, a second matrix composition comprising a polar polymeric material, e.g. polyethylene glycol, and/or a neutralized derivatized vegetable oil, e.g. maleated linseed oil, which composite is capable of loading a higher amount of said active than either composition alone.
US08747869B2 Lipid vesicle compositions and methods of use
The invention provides delivery systems comprised of stabilized multilamellar vesicles, as well as compositions, methods of synthesis, and methods of use thereof. The stabilized multilamellar vesicles may comprise prophylactic, therapeutic and/or diagnostic agents.
US08747868B2 Reaction product of a polar modified polymer and an alkoxysilane and a composition containing the reaction product
The invention relates to a reaction product of a polar modified polymer and an alkoxysilane having at least one solubilizing functional group and at least one amino substituent.
US08747865B2 Use of botulinum neurotoxin to alleviate various disorders
Methods for treating obsessions and compulsions by local administration of a Clostridial toxin. The obsessions or compulsions can be eye poking, body rocking, finger biting, counting, checking and related disorders treated by low dose, intramuscular administration of a botulinum toxin.
US08747863B2 Vaccine for shigella
Disclosed are immunogenic conjugates and therapeutic compositions that include such immunogenic conjugates. Also disclosed are methods of treating and/or inhibiting an Shigella sonnei infection. The disclosed immunogenic conjugates have the general structure: Pr—Sr—O—N═C-Kdo-OS wherein Pr is a carrier protein, Sr is an optional spacer moiety, Kdo is an 3-deoxy-D-manno-octulosonic acid or a derivative thereof, and OS is an oligosaccharide or polysaccharide obtained from S. sonnei. In specific examples, the immunogenic conjugates include the core oligosaccharide obtained from S. sonnei having the structure: wherein R is between 1 and 10 disaccharide repeat units. In specific examples, the disaccharide repeat unit included in the immunogenic conjugate has the structure: α-L-AltNAcA-3-β-FucNAc4N-4-.
US08747862B2 Pathogenic west african human immunodeficiency virus type 2 (HIV-2) group F isolate
The claimed invention is directed toward an HIV-2 isolate designated NWK08F, including variants, and isolated proteins and nucleotides obtained from said isolates.
US08747859B2 Porcine reproductive and respiratory syndrome vaccine based on isolate JA-142
Substantially avirulent forms of atypical porcine reproductive and respiratory syndrome (PRRS) virus and corresponding vaccines are provided which result from cell culture passaging of virulent forms of PRRS. The resultant avirulent atypical PRRS virus is useful as a vaccine in that PRRS specific antibody response is elicited by inoculation of host animals, thereby conferring effective immunity against both previously known strains of PRRS virus and newly isolated atypical PRRS virus strains. The preferred passaging technique ensures that the virus remains in a logarithmic growth phase substantially throughout the process, which minimizes the time required to achieve attenuation. The present invention also provides diagnostic testing methods which can differentiate between animals infected with field strains and attenuated strains of PRRSV.
US08747858B2 Staphylococcus aureus surface protein SA1789 and protective vaccine based thereon
The novel protein SA1789 from Staphylococcus aureus is provided as well as nucleic acid and nucleic acid sequence homologues encoding this protein. Also provided is a composition, particularly a S. aureus vaccine, comprising SA1789 protein or a fragment or derivative thereof capable of generating an immune response that leads to the killing and clearance of S. aureus.
US08747851B2 Anti-CD33 antibodies and methods for treatment of acute myeloid leukemia using the same
The present invention relates to antibodies that bind CD33. More particularly, the invention relates to anti-CD33 antibodies, fragments and homologues of these antibodies, humanized and resurfaced versions of these antibodies, functional equivalents and improved versions of these antibodies, immunoconjugates and compositions comprising these antibodies, and the uses of same in diagnostic, research and therapeutic applications. The invention also relates to a polynucleotide encoding these antibodies, vectors comprising the polynucleotides, host cells transformed with polynucleotides and methods of producing these antibodies.
US08747850B2 Anti-cMET antibody
Antibody capable of binding specifically to the human c-Met receptor and/or capable of specifically inhibiting the tyrosine kinase activity of said receptor, with an improved antagonistic activity, said antibody comprising a modified hinge region. A composition comprising such an antibody antagonist to c-Met and its use as a medicament for treating cancer.
US08747849B2 Antibody and uses thereof
Described are specific binding members e.g. antibodies which may be used in the treatment of diseases associated with cathepsin S activity. The specific binding members bind cathepsin S and inhibit its proteolytic activity. The binding members may be used in the treatment of diseases such as cancer, inflammatory diseases, neurodegenerative disorders, autoimmune disorders, and other diseases associated with excessive, deregulated or inappropriate angiogenesis.
US08747847B2 Monoclonal antibodies for tumor treatment
The present invention relates to methods for inhibiting tumor growth, increasing survival of a subject having a tumor and inducing protection against tumor recurrence in a mammal. The methods comprise administering a humanized monoclonal antibody comprising CDR regions derived from the murine monoclonal antibody designated mBAT-1, in combination with at least one chemotherapeutic agent.
US08747846B2 Compositions and methods for immunization against drug resistant Acinetobacter baumannii
The present invention provides vaccine compositions comprising OmpA, or antigenic fragments thereof, and related methods of active immunization against A. baumannii infection. The invention also provides antibodies and antigen-binding parts thereof that specifically bind to OmpA, and related methods of passive immunization against A. baumannii infection. The compositions and methods of the invention are useful for preventing or treating A. baumannii infections, including those caused by strains resistant to carbapenems and all other antibiotics except colistin or tigecycline, also referred to as extreme drug resistant (XDR) A. baumannii infections, and those resistant to every FDA approved antibiotic, also referred to as pan-drug resistant (PDR) A. baumannii infections.
US08747844B2 Methods of treating pain
The invention relates to methods for treating pain disorders including neuropathic and inflammatory pain and to methods to reduce or eliminate nociceptive tolerance induced by opiate analgesic use by administering an agent that suppresses or blocks S1P biological activity.
US08747843B2 Method of treatment and bioassay involving macrophage migration inhibitory factor (MIF) as cardiac-derived myocardial depressant factor
One embodiment of the present invention relates to a pharmaceutical composition, which includes a therapeutically effective amount of at least one anti-MIF antibody; and at least one pharmaceutically acceptable carrier. Another embodiment of the present invention relates to a pharmaceutical composition, which includes a therapeutically effective amount at least one anti-CD74 antibody; and at least one pharmaceutically acceptable carrier. Another embodiment of the present invention relates to a pharmaceutical composition, which includes a therapeutically effective amount of at least one anti-TNFR antibody; a therapeutically effective amount of at least one anti-MIF antibody; and at least one pharmaceutically acceptable carrier. Other embodiments of the present invention relate to methods of treating or preventing cardiac dysfunction, cardiodepression, burn injury-associated cardiac dysfunction, improving cardiac function in a subject following acute myocardial infarction, and identifying an MIF inhibitor.
US08747841B2 Polypeptides and use thereof for treatment of traumatic or degenerative neuronal injury
The present invention relates to polypeptides transiently activating Ras homolog gene family member A (RhoA) GTPase, polynucleotides encoding said polypeptides and pharmaceutical compositions comprising said polypeptides or said polynucleotides. The present invention further relates to the use of said polypeptides, said polynucleotides or said pharmaceutical compositions for long-term treatment of damage of the peripheral or central nervous system.
US08747838B2 Method for isolating smooth muscle stem cells
This invention relates to a method for isolating smooth muscle stem cells derived from mammalian smooth muscle comprising bringing mammalian smooth muscle cells into contact with a fluorescence-labeled anti-CD45 antibody, anti-CD34 antibody, and anti-CD49f antibody, and isolating cells that would not bind to the anti-CD45 antibody but would bind to the anti-CD34 antibody and the anti-CD49f antibody.
US08747835B1 Artificial and mutated nucleotide sequences
The present invention relates to artificial nucleotide sequences, including specific mutations therein.
US08747832B2 Biodegradable polyanhydrides with natural bioactive molecules
The invention provides polymers that include a biologically active molecule and methods for their use.
US08747824B2 Cosmetic product comprising at least one water-soluble copolymer which contains (meth)acrylamide units
The invention relates to a cosmetic product containing at least one water-soluble copolymer which is obtained by radical copolymerization of acrylamide and/or methacrylamide and other water-soluble a,β-ethylenically unsaturated compounds which are copolymerizable therewith, optionally in the presence of a water-soluble polymeric graft base.
US08747819B1 Nail enamel composition, method of preparation and method of use
A nail enamel composition has a film-forming mixture in a compatible solvent. The film-forming mixture includes nitrocellulose as a major component. The composition further includes a cyanoacrylate mixture comprising cyanoacrylate and a free radical inhibitor, the cyanoacrylate mixture being substantially free of toluene. The invention includes a method of preparation of the composition, and a method of use of the composition.
US08747818B1 Self-tanning compositions
This invention is related to a sunless tanning composition comprising at least one self-tanner and at least one vitamin D compound, wherein the at least one self-tanner is selected from dihydroxyacetone, erythrulose, or a mixture thereof.
US08747816B2 UV-photoprotective compositions comprising diebenzoylmethane screening agents and silicon-containing s-triazine compounds substituted with two aminobenzoate or aminobenzamide groups
UV-photostable, topically applicable cosmetic/dermatological compositions contain at least one dibenzoylmethane UV-sunscreen compound and at least one photostabilizing silicon-containing s-triazine compound substituted with two aminobenzoate or aminobenzamide groups.
US08747815B2 Use of a cosmetic of pharmaceutical composition, comprising a lupeol-rich extract as an active ingredient for stimulating the synthesis of heat shock proteins
The present invention relates to the use of a lupeol-rich extract for the production of a cosmetic or pharmaceutical composition for treating and/or preventing a connective tissue degeneration. Said invention also relates to the use of a lupeol-rich extract for the production of a pharmaceutical composition for preventing and/or treating non-inflammatory articular pathologies, periodontal diseases and stretch marks. The invention also relates to the use of a lupeol-rich extract for the production of a cosmetic composition as a cicatrizing agent, a restructuring agent and an anti-sagging agent for skin and/or mucosae.
US08747811B2 Perylenequinone derivatives and uses thereof
The present invention relates to compounds which are perylenequinone derivatives, their stereoisomers and atropisomers. These compounds can be particularly useful as photosensitizers or sononsensitizers in photodynamic or sonodynamic therapy. The invention also relates to various methods for using these compounds in photodynamic and/or sonodynamic therapy. The compounds also are useful as therapeutic agents for treating various hyperproliferative disorders.
US08747804B2 Modified zinc oxide particles
Process for the preparation of modified ZnO particles in which a zinc salt and a base are mixed in a polar solvent and, if appropriate after the precipitation of a precipitation product, the polar solvent is removed and a residue is obtained, where the residue is taken up in a nonpolar solvent, surface-active substances are added, optionally further effect substances are added and then the modified ZnO particles are separated off from further by-products. Materials such as plastics, coatings or paints comprising modified ZnO particles. Methods for the incorporation of modified ZnO particles into materials, where the modified ZnO particles are incorporated into the materials in the form of dispersions or suspensions. Use of modified ZnO particles for protecting material against the effect of light, heat, oxygen or free radicals, as catalysts, for semiconductive films or cosmetic applications.
US08747803B1 Process for manufacturing of less acidic ferrous sulfate
A process of producing a less acidic ferrous sulfate includes the steps of placing iron shavings within a tank, introducing sulfuric acid and water into the tank, retaining the sulfuric acid and water and the iron shavings within the tank for a period of time so as to react the sulfuric acid and water and iron shavings in order to produce less acidic ferrous sulfate, and removing the less acidic ferrous sulfate from the tank. The iron shavings and the sulfuric acid and the water are reacted together in the tank for a period of time of between twelve and twenty-four hours. The less acidic ferrous sulfate is Fe(SO4)<1.0.
US08747800B2 Graphite material, carbon material for battery electrode, and battery
A carbon raw material such as a green coke in which loss on heat when it is heated from 300 to 1200° C. under an inert atmosphere is no less than 5% by mass and no more than 20% by mass is pulverized and then the pulverized carbon raw material is graphitized to obtain a graphite material suitable for a carbon material for anode in a lithium-ion secondary battery or the like that enables to make electrodes having a high-energy density and a large-current load characteristic since it has a small specific surface area and a small average particle diameter while maintaining high beginning efficiency and a high discharge capacity in the first round of charging and discharging. And an electrode for batteries are obtained using the graphite material.
US08747795B2 Process for production of nickel carbonate
Aspects of the present invention refers to a process for production of nickel carbonate including preparing a magnesium salt solution, contacting the solution with a stream of gaseous CO2, keeping pH between 4 and 10 and temperature between 0 and 100° C., during up to 5 hours to produce a first mixture, contacting the first mixture with a nickel sulphate solution to produce a second mixture, performing a separation of liquid and solid portions of the second mixture, and feeding the magnesium salt solution with the liquid portion. This process recycles the reagent used for producing nickel carbonate and yields a final product that is easy to handle and transport.
US08747793B2 Hollow sphere with mesoporous structure and method for manufacturing the same
The present invention relates to a hollow sphere with a mesoporous structure, and a method for manufacturing the same. The hollow sphere with a mesoporous structure comprises: a shell with plural mesopores penetrating the shell, wherein the shell comprises: a mesoporous silicon oxide material, and mesopores of the mesoporous silicon oxide material are arranged in Ia3d cubic symmetry. In addition, according to the method of the present invention, the aforementioned hollow sphere with the mesoporous structure can be easily obtained by use of mixed surfactants of a cationic surfactant and a non-ionic surfactant.
US08747790B2 Advanced dry head-end reprocessing of light water reactor spent nuclear fuel
A method for reprocessing spent nuclear fuel from a light water reactor includes the step of reacting spent nuclear fuel in a voloxidation vessel with an oxidizing gas having nitrogen dioxide and oxygen for a period sufficient to generate a solid oxidation product of the spent nuclear fuel. The reacting step includes the step of reacting, in a first zone of the voloxidation vessel, spent nuclear fuel with the oxidizing gas at a temperature ranging from 200-450° C. to form an oxidized reaction product, and regenerating nitrogen dioxide, in a second zone of the voloxidation vessel, by reacting oxidizing gas comprising nitrogen monoxide and oxygen at a temperature ranging from 0-80° C. The first zone and the second zone can be separate. A voloxidation system is also disclosed.
US08747789B2 Metal scavenging polymers
A composition comprising a polymer derived from at least two monomers: acrylic-x and an alkylamine, wherein said polymer is modified to contain a functional group capable of scavenging one or more compositions containing one or more metals is disclosed. These polymers have many uses in various mediums, including wastewater systems.
US08747788B1 Aftertreatment module having angled catalyst bank
An aftertreatment module for use with an engine is disclosed. The aftertreatment module may include a housing having an inlet configured to direct exhaust in a first flow direction into the aftertreatment module, and an outlet configured to direct exhaust in the first flow direction out of the aftertreatment module. The aftertreatment module may also include a catalyst bank separating the inlet from the outlet. The catalyst bank may have a face disposed at an oblique angle with respect to the first flow direction. The oblique angle may create an inlet passage extending from the inlet to the catalyst bank and having a decreasing cross-sectional area, and an outlet passage extending from the catalyst bank to the outlet and having an increasing cross-sectional area.
US08747786B2 Ionic liquids as templating agents in formation of uranium-containing nanomaterials
A method for forming nanoparticles containing uranium oxide is described. The method includes combining a uranium-containing feedstock with an ionic liquid to form a mixture and holding the mixture at an elevated temperature for a period of time to form the product nanoparticles. The method can be carried out at low temperatures, for instance less than about 300° C.
US08747785B2 Apparatus for the reduction of gasoline benzene content by alkylation with dilute ethylene
The apparatus converts ethylene in a dilute ethylene stream and dilute benzene in an aromatic containing stream via alkylation to heavier hydrocarbons. The catalyst may be a zeolite such as UZM-8. The catalyst is resistant to feed impurities such as hydrogen sulfide, carbon oxides, and hydrogen and selectively converts benzene. At least 40 wt-% of the ethylene in the dilute ethylene stream and at least 20 wt-% of the benzene in the dilute benzene stream can be converted to heavier hydrocarbons.
US08747782B2 Apparatus for storing and dispensing reagent beads
Embodiments of the invention provide an efficient and effective technique for storing and dispensing reagent beads. In one embodiment, an apparatus is provided for dispensing reagent beads contained in a bead storage device which includes a bead carrier having a plurality of wells; a plurality of reagent beads disposed in the wells; and a cover tape releasably attached to the bead carrier to cover the wells and retain the reagent beads in the wells. The apparatus comprises a channel in which to place the bead storage device with the bead carrier facing a support wall of the channel and the cover tape facing a stripping wall of the channel. The stripping wall includes a stripping gap disposed between a stripping edge and an opposite edge, and a dispense opening provided adjacent the opposite edge on a side of the stripping wall opposite from the stripping edge. The cover tape is insertable through the stripping gap to be pulled against the stripping edge to peel the cover tape from the bead carrier to move the wells of the bead carrier inside the channel toward the dispense opening and expose the wells individually to dispense the reagent beads.
US08747777B2 Microfluidic apparatus including microfluidic device
A microfluidic apparatus includes at least one microfluidic device in which flow paths are formed, a device receiving layer including a receiving part into which the at least one microfluidic device is inserted and at least one pattern layer on which patterns connected to the flow paths of the at least one microfluidic device are formed, wherein each of the at least one pattern and device receiving layers is bonded to an adjacent layer to prevent fluid leakage.
US08747772B2 Device for batch treatment
The invention relates to the batch treatment of goods with gas, steam or vapor, for example sterilization and drying. The distribution of the medium surrounding the load (8) during all stages of such a process is important. According to the invention, movement of fluids within a batch treatment apparatus is achieved using a fluid ejector device (9), An apparatus for the gas, steam or vapor treatment of objects is provided, said apparatus having inside a closable chamber (1) at least one ejector device (9) of the type having a straight flow path for the secondary stream. Any particular fluid or mixture of different fluids entering the chamber during a treatment process may be introduced via an ejector device (9) in order to distribute the fluid around the load (8), or remove material deposited on the load (8). The invention eliminates the need for shaft seal arrangements involved with fans.
US08747767B2 Catalyst return apparatus, and process for reacting a feedstock
A catalyst return apparatus is disclosed as well as a riser reactor system comprising the conduit apparatus and a riser reactor, the conduit apparatus comprising a catalyst return conduit and at least two flow control devices in series, each flow control device arranged to control the flow of fluid through the conduit, wherein the length of the catalyst return conduit is more than 20 m. A process for reacting a feedstock in a riser reactor system comprising a riser reactor, the catalyst return apparatus and, and a stage vessel, the process comprising: holding a fluid comprising the catalyst in the at least one stage vessel for a residence time of at least 10 seconds.
US08747765B2 Apparatus and methods for utilizing heat exchanger tubes
In one aspect, the present techniques include a heat exchange apparatus including: a) a body comprising an interior cavity, the body including: a first surface and a second surface defining at least a portion of the body and the first surface positioned exterior with respect to the second surface and the interior cavity, and the second surface positioned exterior with respect to the interior cavity and interior with respect to the first surface; b) a first conduit for conveying a fluid to the body; c) a second conduit in fluid communication with the first conduit wherein the second conduit is positioned at least partially within the interior cavity of the body; and d) a joint between the first conduit and the second conduit, wherein the joint moves between a first location and a second location based on the temperature within the interior cavity, wherein at least one of said first location and said second location is positioned intermediate the first surface and the second surface.
US08747763B2 Plasma sterilization apparatus
In order to provide a plasma sterilization apparatus with high plasma generation efficiency, the apparatus includes first and second electrodes (3, 2), a first dielectric body layer (1), and an insulating spacer (6). The first dielectric body layer (1) is disposed between the first and second electrodes (3, 2). The insulating spacer (6) is disposed between the first electrode (3) and the first dielectric body layer (1). The insulating spacer (6) has a lower permittivity than a permittivity of the first dielectric body layer (1).
US08747760B2 Catalytic converter
A catalytic converter includes a housing defining an interior space, with a monolith supported therein. The monolith includes a catalyst disposed thereon. The catalytic converter includes a flow directing mechanism defined by one of the housing and/or the monolith to re-direct a flow of exhaust gas across the monolith to obtain a more even flow distribution of exhaust gas across the monolith. The monolith may include different regions, with each region including a different catalyst density disposed thereon. The catalyst density of each region may be optimized for the flow rate of exhaust gas across the monolith through each region.
US08747758B2 Process and apparatus for mixing two streams of catalyst
A process and apparatus for mixing streams of regenerated and carbonized catalyst involves passing a catalyst stream into and out of a chamber in a lower section of a riser. The chamber fosters mixing of the catalyst streams to reduce their temperature differential before contacting hydrocarbon feed.
US08747756B2 Reactor and method for continuous polymerization
The present invention relates to a reactor (10) and a process for continuous polymerization, where the reactor (10) has an essentially tubular reactor housing (16). The reactor housing (16) has a drive (38) which runs along the geometric central axis (12) in the flow direction (22) and is configured as a central shaft. A rotatably arranged scraper or wiper (36) is provided within the reactor housing (16); the scraper or wiper (36) has at least one scraper or wiper blade (42) to run along an interior side (44) of the reactor housing (16). The rotational movement of the scraper or wiper (36) results in radial mixing of a stream within the reactor housing (16) which dominates gravity effects and, by virtue of shaping of the scrapers or wipers, optionally makes plug flow or backflow within the reactor (10) possible. This allows the reaction conditions in the axial direction of the reactor housing (16) to be predicted and individually suitable reaction conditions to be set and controlled along the reactor housing, so that, in particular, a desired molecular weight distribution can be set.
US08747748B2 Chemical sensor with conductive cup-shaped sensor surface
A system includes a sensor including a sensor pad and a well wall structure defining a well operatively coupled to the sensor pad. The well is further defined by a lower surface disposed over the sensor pad. The well wall structure defines an upper surface and defines a wall surface extending between the upper surface and the lower surface. The system further includes a conductive layer disposed over the lower surface and the wall surface.
US08747747B2 Reader devices for manipulating multi-fluidic cartridges for sample analysis
A reader for mechanical actuation of fluids within a test cartridge. The instrument interface including multiple independently-controlled plungers aligned to respective fluidic pouches on a test cartridge that is inserted into a testing apparatus embodying the instrument interface. The plungers include tips for applying mechanical force to the respective fluidic pouches.
US08747745B2 Apparatus and method for biochemical analysis
An apparatus for analyzing that performs a plurality of treatment operations includes a plurality of treatment units arranged in a vertical direction of the apparatus. The apparatus for analyzing also includes a conveying mechanism configured to convey a sample between the treatment units. The sample is delivered above or in the treatment units. A pipette chip is also delivered above or in the treatment units.
US08747743B2 Automatic analyzer
The present invention provides an automatic analyzer including: an analyzing unit that includes an analyzing mechanism and a dispensing reagent cassette storage for storing a reagent cassette for dispensing; a reagent replenishing unit including a replenishing reagent cassette storage for storing in advance a reagent cassette for replenishing to be supplied as the reagent cassette for dispensing; and means for ejecting from the replenishing reagent cassette storage the reagent cassette for replenishing that cannot be supplied as the reagent cassette for dispensing.
US08747741B2 Cosmetic product sterilization
The invention relates to a method for sterilizing a cosmetic product, in which said product consists of a fluid circulating under regulated pressure in a sterilization circuit (1), according to the viscosity of said fluid. The invention also relates to the device for implementing such a method.
US08747738B2 Sterilization methods for medical devices
Methods of sterilizing medical devices, including implantable medical devices like stents, chemically and with radiation are disclosed. Methods of preparing a sterile, packaged medical device, including a sterile, packaged implantable medical device or stent are disclosed.
US08747733B2 Precipitation hardenable martensitic stainless steel and steam turbine blade using the same
A precipitation hardenable martensitic stainless steel excellent in the stability of martensite, having the high strength, high toughness and high corrosion resistance is provided. The precipitation hardenable martensitic stainless steel contains at a mass rate, C: 0.05-0.10%, Cr: 12.0-13.0%, Ni: 6.0-7.0%, Mo: 1.0-2.0%, Si: 0.01-0.05%, Mn: 0.06-1.0%, Nb: 0.3-0.5%, V: 0.3-0.5%, Ti: 1.5-2.5%, Al: 1.0-2.3%, and the remainder consisting of Fe and an unavoidable impurity.
US08747731B2 Device for conditioning process gases for the heat treatment of metallic work pieces in industrial furnaces
In a device for preparing process gases (3) for heat treatments of metallic materials/workpieces, the respective process gas (3) is to be fed into at least one treatment chamber (1.1) in an industrial furnace (1) having been practically fully prepared, homogenised and heated, and the method is to be carried out both with newly built and particularly with already existing installations of industrial furnaces (1) with the aid of the device, wherein the process gas (3) is prepared with compression at temperatures uncoupled from the temperature in the treatment chamber (1.1), in a process separate from the heat treatment process in the treatment chamber (1.1), and in a temperature range up to about 1250° C., and is rendered usable for economical and low-emission heat treatment (FIG. 3).
US08747726B2 Method of manufacturing syringes and other devices
A syringe for use in a pressurized injection of a fluid includes a syringe barrel including a polymeric material having undergone expansion via blow molding. An inner diameter of the syringe barrel can, for example, be sufficiently constant (over at least a portion of the axial length of the syringe) that a plunger slidably positioned within the syringe barrel and in generally sealing contact with an inner wall of the syringe barrel can be used within the syringe barrel to generate a pressure of at least 1 psi within the syringe barrel. In several embodiment, the inner diameter of the syringe barrel is sufficiently constant to generate a pressure of at least 100 psi, at least 300 psi, or even at least 500 psi within the syringe barrel. A method of forming a syringe includes the steps of: injection molding at least one polymeric material to form a preform; placing the preform into an blow mold die; and expanding at least a portion of the preform while heating the preform within the die to form a barrel of the syringe. The syringes can be formed to withstand relatively high pressures as described above. The at least one polymeric material can, for example, be polyethyleneterephthalate, cyclic olefin polymer, polypropylene, polystyrene, polyvinylidene chloride, polyethylene napthalate and/or nylon.
US08747724B2 Blow molding machine and method for producing hollow bodies
A blow molding machine for producing hollow bodies, particularly wide-necked containers, having a blow nozzle and a blow mold for accommodating a preform. To save air during the blowing process in a simple way, a plunger is introduced into the preform during the blowing operation.
US08747723B2 Solution spun fiber process
The invention relates to a process for forming fibers from a spinning solution utilizing a high speed rotary sprayer. The fibers can be collected into a uniform web for selective barrier end uses. Fibers with an average fiber diameter of less that 1,000 nm can be produced.
US08747721B2 Methods, systems, and products involving sheet products
A method for forming a tubular sheet product roll includes providing a sheet product roll having a first configuration and a void, centering a rotational axis of the sheet product roll on a longitudinal axis of a first tool, and inserting the first tool into the void of the sheet product roll to define an inner diameter of the void and to form the sheet product roll having a second configuration different from the first configuration.
US08747714B2 Method of manufacturing mesh-reinforced thermoplastic membranes
A method of simultaneously manufacturing multiple mesh-reinforced thermoplastic membranes including providing a roll of mesh reinforcing sheet having a first side and a second side and drawing the mesh sheet through a cutting device to the cut the mesh sheet longitudinally and create a plurality of mesh sheets. The method also includes separating the plurality of mesh sheets to create gaps therebetween and simultaneously extruding a molten thermoplastic layer onto both the first and second sides of the plurality of mesh sheets and over the gaps to create a single mesh-reinforced thermoplastic membrane. The mesh-reinforced thermoplastic membrane is then cut longitudinally along the gaps between the plurality of mesh sheets to create a plurality of mesh-reinforced membranes, each membrane having a pair of longitudinally extending gum edges.
US08747712B2 Method and device for manufacturing articles in the form of slabs of conglomerate stone or stone-like material
During the manufacture of slabs of stone or stone-like material using the technology which envisages preparation of a mix formed by a granular product and by a binder consisting of a hardening synthetic resin, vacuum vibrocompression of a layer of said mix and hardening of the resultant rough slab by means of a catalytic action and by heating, the slab is cooled to room temperature by directing onto both its surfaces a flow of cooling fluid, in particular air at room temperature, while controlling the flowrate of the air, so as to ensure gradual and controlled cooling, and supporting the slab in a static and perfectly flat condition. The device consists of a flat structure provided with a plurality of spacers (20) which keep the slab in a perfectly flat condition and allow the flow of cooling fluid to perform its action.
US08747710B2 Method for producing porous body
An apparatus for producing a porous body that forms an expandable slurry containing at least inorganic powder, a foaming agent, and a binder into a sheet, causes the expandable slurry sheet to be foamed and baked, and thereby produces the porous body, the apparatus includes: a mixer preparing the expandable slurry by containing inorganic powder, a foaming agent, and a binder; a die-coater that has a discharge opening which discharges the expandable slurry provided from the mixer to an external thereof so as to shape the expandable slurry into a sheet; and a carrier sheet arranged so as to face the discharge opening of the die-coater with a gap interposed therebetween, and feeding the expandable slurry discharged from the discharge opening, wherein a flow path of the expandable slurry from inside the mixer to the discharge opening of the die-coater is hermetically sealed from an outside.
US08747705B2 Compound semiconductors and their application
Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-zTez, where 0
US08747704B2 Compound semiconductors and their application
Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-zQz, where Q is at least one selected from the group consisting of O, S, Se and Te, 0
US08747699B2 Method for producing metal microparticles, and metal colloidal solution containing the metal microparticles
An aqueous solution containing a polymer dispersant and a metal compound, and an aqueous solution of a reducing agent, are joined together and uniformly mixed while being subjected to reduction reaction to give metal microparticles, in a thin film fluid formed between processing surfaces arranged to be opposite to each other so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, by using a reaction apparatus of uniform stirring and mixing the above aqueous solutions.
US08747697B2 Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same
Provided herein are phosphor compositions that include a YAG phosphor that is substituted with gallium, such as YaCebAlcGadOz, wherein a, b, c, d and z are positive numbers. Also provided are solid state light emitting devices that include a YAG phosphor that is substituted with gallium.
US08747690B2 Quaternary ammonium salt and composition, and electrochemical device
A quaternary ammonium salt of the formula (1), a composition containing the quaternary ammonium salt and an organic solvent, and an electrochemical device using the salt wherein R1 and R2 are both methyl and X− is BF4− or N(CF3SO2)2−.
US08747682B2 Pattern formation method and method for manufacturing semiconductor device
According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.
US08747681B2 Preparation method of fluorescent powder layer
A preparation method of the fluorescent powder layer (108, 208) is provided. The said preparation method is carried out as following steps: step 1, a fluorescent powder layer (102, 202) is coated on one surface of a flat transparent substrate (101, 201); step 2, the surface of a board (103, 203) is shaped into a curved surface (104, 204); step 3, the board (103, 203) of step 2 is arranged on the substrate (101, 201) coated with the fluorescent powder layer (102, 202) of step 1; the curved surface (104, 204) of the board (103, 203) faces the substrate (101, 201), and the fluorescent powder layer (102, 202) is sandwiched between the substrate (101, 201) and the board (103, 203); step 4, the substrate (101, 201) is softened by heating, a pressure is then applied to the board (103, 203) so that the fluorescent powder layer (102, 202) sandwiched between the substrate (101, 201) and the board (103, 203) forms the fluorescent powder layer (108, 208) having the same curved shape as the curved surface (104, 204) of the board (103, 203) by the pressure, and the fluorescent powder layer (108, 208) on the substrate (101, 201) is completed after cooling.
US08747680B1 Method of manufacturing a magnetoresistive-based device
A method of manufacturing a magnetoresistive-based device having magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, including removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively; and removing the tunnel barrier layer, second magnetic materials layer, and second electrically conductive layer unprotected by the second hard mask to form a tunnel barrier, second magnetic materials, and a second electrode.
US08747677B2 Magnetic separation device
A magnetic separation device comprising a magnetic base and a retention mechanism, as well as a method of evacuating liquid from a well plate containing liquid and magnetic particles, are disclosed. In specific embodiments, the retention mechanism comprises one or more wire clips. In certain embodiments, the magnetic base comprises apertures configured to receive the wire clips. The retention mechanism can be configured to secure a well plate to the magnetic base so that a user may evacuate liquid from a well plate containing liquid and magnetic particles. In certain embodiments, the method comprises inverting the magnetic separation device and well plate. In particular embodiments, the method comprises rapidly and forcefully inverting magnetic separation device and well plate.
US08747675B2 Adsorbents
An adsorbent suitable for heavy metal absorption is described, comprising a thiol-functionalised support containing a stabilising amount of an alkaline metal reacted with said thiol functionality. The adsorbent may be used to remove heavy metals e.g. mercury and/or arsenic, from wastewater streams such as produced water or flue gas scrubber waters.
US08747673B2 Methods for recovering a solvent from a fluid volume and methods of removing at least one compound from a nonpolar solvent
A method of removing a nonpolar solvent from a fluid volume that includes at least one nonpolar compound, such as a fat, an oil or a triglyceride, is provided. The method comprises contacting a fluid volume with an expanding gas to expand the nonpolar solvent and form a gas-expanded solvent. The gas-expanded solvent may have a substantially reduced density in comparison to the at least one nonpolar compound and/or a substantially reduced capacity to solubilize the nonpolar compound, causing the nonpolar compounds to separate from the gas-expanded nonpolar solvent into a separate liquid phase. The liquid phase including the at least one nonpolar compound may be separated from the gas-expanded solvent using conventional techniques. After separation of the liquid phase, at least one of the temperature and pressure may be reduced to separate the nonpolar solvent from the expanding gas such that the nonpolar solvent may be recovered and reused.
US08747671B2 Simultaneous anoxic biological phosphorus and nitrogen removal
Methods and systems are provided for treating wastewater to simultaneously remove nitrogen, carbon, and phosphorus. The process includes an anoxic tank that receives at least two streams, including plant influent wastewater and return activated sludge. These streams are mixed in the anoxic tank to promote phosphorus release and fermentation of particulate and dissolved organic matter. The mixed liquor is transferred to an aerated tank having low dissolved oxygen concentrations to promote development of phosphorus-release bacteria that is eventually recycled to the anoxic tank by way of the return activated sludge. Simultaneous nitrification, denitrification, and phosphorus release occur in the aerated tank. A membrane tank separates treated effluent from activated sludge in a membrane tank.
US08747666B2 Methods and apparatuses for filtering water from a river or stream
The invention relates to a method and apparatus for filtering contaminated water from an oil or gas well.
US08747661B2 Method and apparatus for oil recovery from tar sands
A process for bitumen extraction from hydrocarbonaceous solids, such as tar sand or oil shale, is performed in fluidized bed of a swirl reactor. This provides active interaction of three phases: 1) liquid phase—bituminous oil with solvent; 2) solid phase—sand grains, clay; 3) gaseous phase—steam and gasses. The process also involves the step of pressure decrease inside the reactor to activate a gas desorption dissolved in bituminous sand mixture. The process of separation of the bitumen and sand combines centrifuging and discharging individual products for further processing.
US08747660B2 Process for desulfurizing petroleum feedstocks
A process for upgrading an oil feedstock includes reacting the oil feedstock with a quantity of an alkali metal, wherein the reaction produces solid materials and liquid materials. The solid materials are separated from the liquid materials. The solid materials may be washed and heat treated by heating the materials to a temperature above 400° C. The heat treating occurs in an atmosphere that has low oxygen and water content. Once heat treated, the solid materials are added to a solution comprising a polar solvent, where sulfide, hydrogen sulfide or polysulfide anions dissolve. The solution comprising polar solvent is then added to an electrolytic cell, which during operation, produces alkali metal and sulfur.
US08747659B2 Hydrotreating process
A process for hydrotreating a first aromatics- and sulfur-containing hydrocarbon feed using a fresh supported CoMo catalyst, includes treating the fresh catalyst under first hydrotreating conditions with a second hydrocarbon feed having a lower aromatics content than the first feed.