| Document | Document Title |
|---|---|
| US08736658B2 |
Image-based video conference control method, terminal, and system
Embodiments of the present invention disclose an image-based video conference control method, terminal, and system. The method includes the following steps: sending a control request message to a network-side device (101); dynamically displaying image information according to a control message fed back by the network-side device (102); and editing an image according to the image information to complete video conference control (103). Through the embodiments of the present invention, an image of a single or multiple conference site pictures can be directly selected for operation according to abundant information provided by each conference site picture in combination with an operation of a remote controller, so that all kinds of conference control operations in a video conference are implemented, and a need of entering a multi-level menu to carry out complicated video conference control is avoided. |
| US08736652B2 |
Surface-emitting laser device, surface-emitting laser array, optical scanner, image forming apparatus, and method for manufacturing surface-emitting laser device
A surface-emitting laser device includes a transparent dielectric layer provided in an emitting region and configured to cause a reflectance at a peripheral part to be different from a reflectance at a central part in the emitting region. In the surface-emitting laser device, the thickness of a contact layer is different between a region having a relatively high reflectance and a region having a relatively low reflectance in the emitting region. The contact layer is provided on the high refractive index layer of an upper multilayer film reflecting mirror, and the total optical thickness of the high refractive index layer and the contact layer in the region having the relatively low reflectance is deviated from an odd number multiple of a one quarter oscillation wavelength of laser light emitted from the emitting region. |
| US08736649B2 |
Apparatus, system and method for automated detection of signaling in a print head
The present invention is and includes an apparatus, system and method for providing an automated detection of thermal history control signal scheme and an automated switching circuit to select a converter circuit that changes one type of thermal history control signals from a thermal printer to another type for receipt by the driver ICs on a thermal printhead. |
| US08736647B2 |
Apparatus, system and method for controlling a print head
The present invention is and includes a conversion circuit for allowing a printer controller to send a different set of control signals for dot history control to an integrated circuit driver other than those which the integrated circuit driver is designed to receive. The conversion circuit includes a plurality of driver circuits coupled to a plurality of strobe signals from at least one strobe signal generator, wherein each of the plurality of driver circuits comprises a plurality of gating groups respectively coupled to the plurality of strobe signals, wherein each of the plurality of gating groups includes a plurality of gate units respectively coupled to a plurality of heating elements wherein at least one gate unit controls at least one coupled heating element according to a corresponding strobe signal. |
| US08736643B2 |
Methods and systems for reducing power consumption in dual modulation displays
A control system for a dual modulation display comprises an input configured to receive image data specifying a desired image at an initial resolution, a downsampler configured to downsample the image data into a plurality of downsample blocks and obtain one or more image values for each downsample block, a backlight processing pipeline which determines driving levels for light emitters based on the image values, a lightfield simulator which receives data about the driving levels and generates a backlight illumination pattern, a front modulator processing pipeline which receives the image data and the backlight illumination pattern and determines control levels for light transmission elements of the front modulator, and, an image value adjuster which receives the image values and reduces image values of downsample blocks which meet adjustment criteria before providing the image values to the backlight processing pipeline. |
| US08736642B2 |
Output circuit for reducing offset for use in source driver adapted to drive liquid crystal device
An offset-reducing output circuit of a source driver adapted to drive a liquid crystal device. The output circuit includes an operational amplifier having a non-inverting input to receive a reference voltage. The output circuit also includes input and output capacitors. One terminal of the input capacitor and one terminal of the output capacitor are connected to a node extending to an inverting input of the operational amplifier in at least a normal output operation mode. The output circuit also includes a switching circuit to short both terminals of the input capacitor and both terminals of the output capacitor in a reset operation so that the reference voltage is applied to the terminals of the input and output capacitors respectively. The switching device applies a gray scale voltage to an opposite terminal of the input capacitor in a normal operation mode. |
| US08736641B2 |
Apparatus and method for driving organic light emitting display device
Disclosed are an apparatus and method for driving an organic light emitting display device. The driving apparatus includes a display panel, a data converter, a timing controller, and a panel driver. The data converter gamma-corrects three-color input data having red, green, and blue, performs color coordinate conversion based on the gamma-corrected blue data to generate three-color conversion data and a color gamut determination signal, inversely gamma-corrects the three-color conversion data, and generates four-color image data to be supplied to a unit pixel according to the color gamut determination signal on the basis of the three-color input data and the inversely gamma-corrected three-color conversion data. |
| US08736629B1 |
System and method for an efficient display data transfer algorithm over network
Systems and methods for an efficient display data transfer algorithm over a network are disclosed. A compressed frame buffer update transmitted from a server via a network is received by a hardware decompression engine. The hardware decompression engine identifies one or more palette entries indicated in the compressed frame buffer update and determines whether the one or more palette entries is stored in a palette cache of the hardware decompression engine. If the one or more palette entries is not stored in the palette cache, the hardware decompression engine writes the one or more palette entries from an external palette memory to the palette cache. Decompressed display data is generated based on the compressed frame buffer update using the palette cache. The decompressed display data is written to an output buffer of the hardware decompression engine. |
| US08736626B2 |
Method and system for cryptographically securing a graphics system
A system and method for cryptographically securing a graphics system connectable via an external bus to a computing system, the graphics system including a graphics processor, a video memory and a memory controller for controlling the flow of data to and from the video memory. The graphics system further includes a copy engine for copying data between a system memory of the computing system and the video memory, where this copy engine acts independently of the graphics processor of the graphics system. The present invention enables the copy engine of the graphics system to decrypt encrypted data in the course of copying data from the system memory to the video memory and to encrypt unencrypted data in the course of copying data from the video memory to the system memory. Thus, cryptographic protection of secure content may be assured by the graphics system without the excessive usage of its primary resources for this non-graphical purpose. |
| US08736621B2 |
System and method for configuring a display pipeline
Systems and methods are disclosed for video processing modules. More specifically a network is disclosed for processing data. The network comprises a register DMA controller adapted to support register access and at least one node adapted to the data. At least one link communicates with the node, and is adapted to transmit data and at least one network module communicates with at least the link, and is adapted to route data to at least the link. |
| US08736618B2 |
Systems and methods for hot plug GPU power control
Systems and methods include an electronic device having multiple GPUs and a GPU power control process that controls switching between a first GPU and a second GPU, such as a high performance GPU. The electronic device may be coupled to an external display by a passive adapter or an active adapter. The GPU power control process may determine if the second GPU is active and switch to the second GPU upon connection of the external display through either the passive adapter or the active adapter. Upon connection of an active adapter, the GPU power control process may use hot plug functionality to determine connection of the external display to the active adapter and provide appropriate switching in response thereto. |
| US08736610B2 |
Systems and methods for rendering with ray tracing
For ray tracing scenes composed of primitives, systems and methods-accelerate ray/primitive intersection identification by testing rays against elements of geometry acceleration data (GAD) in a parallelized intersection testing resource. Groups of rays can be described as shared attribute information and individual ray data for ray data transfer. A host hosts shading and/or management processes can control the testing resource and adapting the ray tracing. The GAD elements can be arranged in a graph, and rays collected into collections based on whether a ray intersects a given element. When a collection is deemed ready for further testing, it is tested for intersection with GAD elements connected, in the graph, to the given element. The graph can be hierarchical such that rays of a given collection are tested against children of the GAD element associated with the given collection. |
| US08736609B2 |
Method and device for visualizing surface-like structures in volumetric data sets
The present invention relates to a method and a device for visualizing surface-like structures in volumetric data sets, including defining local coordinate systems at sample points of the volumetric data set, transforming external parameters from a global coordinate system into the local coordinate systems, calculating the gradient vector components (Gai, Gbi, Gci) within the local coordinate systems of the sample points, and using the gradient vector components (Gai, Gbi, Gci) for calculating a surface normal at a given position of the volumetric data set, where the surface normal is important for conventional illumination models such as the Blinn-Phong shading model, preferably, the present invention is also calculating the external parameters from the global coordinate system at the given position by using the transformed external parameters of the local coordinate systems of the sample points, where the shading or illumination at the given position is then done by using a conventional illumination model, thereby using the calculated surface normal at the given position and the calculated external parameters at the given position. |
| US08736608B2 |
System and method for rendering surface materials
A surface material rendering system and method are disclosed. In particular, a surface material rendering system includes a user input part for receiving user inputs; a material information preprocessor for converting surface material information inputted from the user input part in a form of B-spline volumes; a sampling information preprocessor for producing sampling information in proportion to the converted surface material information; and a surface material renderer for rendering surface materials based on the converted surface material information and the sampling information. The system and method can be applied for realistic surface rendering in computer graphics, CAD, and visualization. |
| US08736606B2 |
Method and apparatus to create 3-dimensional computer models of persons from specially created 2-dimensional images
A method to create a computer retrievable three dimensional model of a person that can be used as a replacement for manual measurements in the garment industry. The method uses a garment which has geometrical patterns, such as a grid pattern. The garment also contains marks that would identify landmark locations for identifying geodetic points on the person wearing it and thus could be aligned to predetermined points when wearing. A calibrated set of images are captured by multiple cameras with the person wearing this garment. These images are analyzed by a computer program which will calculate the exact spatial location of points along the geometric pattern, thus recreating the measurements of the person. A model thus created can be used in multiple industries such as, but not limited to the garment industry. |
| US08736599B2 |
Method for unified visualisation of heterogeneous datasets
The present invention relates to a computer-readable data storage medium comprising a graphic dataset in the form of a tiled mipmap 101, and to a method of extracting from said computer-readable data storage medium to a computer memory a subset of said mipmap 101 in the form of a clipmap 109. The present invention relates also to a computer memory containing such a clipmap 109, as well as to a method of rendering said clipmap 109 in a computer system. At each level of detail of the mipmap but the lowest, a tile block 105 formed by a discrete plurality of tiles 104 is coextensive with a whole single tile 104 at the next lower level of detail of the tiled mipmap 101. |
| US08736598B2 |
Electrophoresis display appparatus and power control method thereof
An electrophoresis display apparatus is provided comprising a display panel comprising data lines and gate lines crossing the data lines, a data driving circuit generating data voltages selected among a positive voltage, a negative voltage, and a ground voltage during an image update period and supplying the data voltages to the data lines, a gate driving circuit supplying gate pulses to the gate lines in synchronization with the data voltages during the image update period, and a control logic circuit blocking an output of the data driving circuit based on a variation in one of the positive voltage and a logic power voltage immediately after the image update period, wherein the logic power voltage is lower than the positive voltage and higher than the ground voltage and wherein the ground voltage is lower than the logic power voltage and higher than the negative voltage. |
| US08736595B2 |
Driving device and driving method for image display device
A display driving device and method capable of canceling an offset voltage while suppressing a delay in outputting an image signal to the display device by the time required for the image signal to be completely received in the display device. In an exemplary embodiment, when an image signal is input to an operational amplifier, a pixel of the display device, to which a voltage based on the image signal is applied, and an output terminal of the operational amplifier are connected to each other. The image signal is input to the operational amplifier, and, when charges corresponding to an offset voltage generated in the operational amplifier have accumulated in a capacitor, the image signal is input to the operational amplifier together with the charges accumulated in the capacitor while the connection between the pixel and the output terminal of the operational amplifier is maintained. |
| US08736593B2 |
Power source circuit having a protector to control an operation of a voltage generator and display apparatus having the same
A power source circuit of a display apparatus includes a voltage divider, an operational amplifier, a first switch, a second switch, and a protector. The voltage divider generates a divided voltage between a first driving voltage and a ground voltage. The operational amplifier receives the divided voltage and outputs the divided voltage as a second driving voltage. The first switch is connected between a first supply voltage terminal to receive the first driving voltage and a common node. The second switch is connected between the common node and a second supply voltage terminal to receive the ground voltage. The protector is connected to the common node to limit a voltage output of the first supply voltage terminal in response to a voltage of the common node. |
| US08736591B2 |
Display device using pixel memory circuit to reduce flicker with reduced power consumption
A display device where a memory circuit is installed into each pixel without generating flicker, including a plurality of pixels arranged in a matrix, wherein each pixel has a light-transmissive element controlling the amount of transmissive light in response to a voltage difference between a first electrode and a second electrode, a memory circuit storing the voltage level of the first electrode, and a controller. In the case where the first electrode has a positive voltage level with respect to the second electrode at a refreshing timing, the controller makes the memory circuit store the voltage level of the first electrode, applies a first predetermined voltage to the second electrode to increase the voltage level of the first electrode by the first predetermined voltage, and discharges the first electrode so that the first electrode has a negative voltage level with respect to the second electrode. |
| US08736589B2 |
Display device and driving method thereof
In a display device, the anode voltage of an organic light emitting element is periodically reset. The control terminal of a driving transistor is periodically reset, and an input data voltage is connected to the control terminal through an input terminal and an output terminal of the driving transistor. As a result, good control over the displayed luminance is achieved. Other features are also provided. |
| US08736583B2 |
Virtual links between different displays to present a single virtual object
Virtual links are used between two different displays to represent a single virtual object. In one example, the invention includes generating a three-dimensional space having a first display of a real first device and a second display of a real second device and a space between the first display and the second display, receiving a launch command as a gesture with respect to the first display, the launch command indicating that a virtual object is to be launched through the space toward the second display, determining a trajectory through the space toward the second display based on the received launch command, and presenting a portion of the trajectory on the second display. |
| US08736582B2 |
Time domain reflectometer touch screen sensor
TDR (time domain reflection) technology may be used in optical domain or in electrical domain. For electrical TDR, single layer ITO glass may form a transmission line as a base TDR touch sensor. When the touch sensor is paired, the existing internal metal line of the display device may be reused as a TDR sensor and the ITO glass may be removed. When touched, the TDR profile is changed dynamically from baseline to the particular profile due to its dynamic impedance profile change across the display screen. Likewise, for optical TDR touch sensing, 2 dimensional optical slab waveguide is used to carry OTDR signal. When touched, the profile is changed due to this perturbation mainly by evanescent field changes on that particular position. |
| US08736581B2 |
Touch sensing with frustrated total internal reflection
A touch-screen device includes a radiation source, a waveguide configured to receive radiation emitted by the source and to cause some of the radiation to undergo total internal reflection within the waveguide, a pliable frustrating layer disposed relative to the waveguide to enable the frustrating layer to contact the waveguide when the frustrating layer is physically deformed, the frustrating layer being configured to cause frustration of the total internal reflection of the received radiation within the waveguide when the frustrating layer is physically deformed to contact the waveguide such that some of the received escapes from the waveguide at the contact point, an imaging sensor configured to detect some of the radiation that escapes from the waveguide, and a structure disposed relative to the frustrating layer, the structure configured to steer at least a portion of the radiation that escapes from the waveguide toward the imaging sensor. |
| US08736571B1 |
Mesh design for touch sensors
In one embodiment, an apparatus includes a touch sensor including a mesh of multiple first lines and second lines of conductive material extending across a display. The first lines are substantially parallel to each other. The second lines are substantially parallel to each other. The display includes multiple pixels that each include sub-pixels. Each of the pixels has a first pixel pitch along a first axis and a second pixel pitch along a second axis that is perpendicular to the first axis. Each of the sub-pixels has a first sub-pixel pitch along the first axis, a first sub-pixel dimension along the first axis, and a second sub-pixel dimension along the second axis. The first lines extend across the display at a first angle relative to the first axis. The first angle is at least approximately equal to the arctangent of the ratio of the second sub-pixel dimension to the first pixel pitch. |
| US08736560B2 |
Electronic device including tactile touch-sensitive display and method of controlling same
A method of controlling an electronic device having a touch-sensitive display includes determining a first value representative of force applied by an actuator to a touch-sensitive input device of an electronic device, controlling the actuator to modulate the force on the touch-sensitive input device for providing tactile feedback, determining a second value representative of force applied by the actuator to the touch-sensitive input device, and adjusting control of the actuator to adjust a subsequent force applied by the actuator based on a difference between the first value and the second value. |
| US08736555B2 |
Touch sensing through hand dissection
Apparatus and methods are disclosed for simultaneously tracking multiple finger and palm contacts as hands approach, touch, and slide across a proximity-sensing, multi-touch surface. Identification and classification of intuitive hand configurations and motions enables unprecedented integration of typing, resting, pointing, scrolling, 3D manipulation, and handwriting into a versatile, ergonomic computer input device. |
| US08736551B2 |
Touch-sensor-controller sensor hub
In one embodiment, a method includes controlling a touch sensor of a device. The control of the touch sensor includes a first processing cycle executed by the controller that comprises acquisition of touch-sensor signals from the touch sensor; a second processing cycle executed by the controller that comprises pre-processing of the touch-sensor signals; and a third processing cycle executed by the controller that comprises processing of the touch-sensor signals to determine whether a touch or proximity input has occurred with respect to the touch sensor. If the touch or proximity input has occurred with respect to the touch sensor, a location of the touch or proximity input is determined. The method also includes controlling other sensors of the device. The control of the other sensors includes one or more fourth processing cycles executed by the controller concurrently with the first processing cycle or the second processing cycle. |
| US08736543B2 |
Liquid crystal display device with backlight
An area control section individually sets illumination intensity (light control value) of each backlight cell corresponding to each area of the display screen. A spatial filter corrects the light control values so that spatial distribution of the light control values becomes more moderate between adjoining areas. A black area control section sets the minimum value of the light control value based on a “black area” in the screen. A power control section corrects the light control values so that power consumption of the backlight does not exceed a limit value. A shading control section corrects the light control values to relatively lower brightness in the peripheral part of the screen compared to the central part of the screen. A micro-controller switches the operations of the above light control value correcting sections according to an image display mode selected by the user. |
| US08736531B2 |
Driving device for liquid crystal display panel
A driving device drives a liquid crystal display panel in which the number of source lines is by one larger than the number of columns of pixel electrodes and in which the columns of pixel electrodes are arranged between the source lines. The driving device has a configuration in which potential output terminals, in a central region, are not connected to any source line. A voltage follower is connected to an output switching section. Additionally, potential output terminals are connected through switches to input terminals, respectively. The switch connects a first terminal to a second terminal with control signal at a high level and connects the first terminal to a third terminal with at a low level. |
| US08736529B2 |
Method and apparatus for generating an overdrive signal for a liquid crystal display
An overdriving apparatus is provided in the invention. The apparatus includes a receiving module, a storing module, a dynamic information generating module, and an image driving module. The receiving module receives image data relative to an image signal. The storing module is used for storing the image data. Based on the image data, the dynamic information generating module generates dynamic information corresponding to a current image. The image driving module then generates an overdriving signal and/or a standard driving signal, according to the dynamic information and the image data, to drive a display. |
| US08736523B2 |
Pixel circuit configured to perform initialization and compensation at different time periods and organic electroluminescent display including the same
Pixel circuits and an organic electroluminescent display including the same are provided. The pixel circuit includes: an organic light emitting diode; a fifth transistor coupled to a third scan line, a reference power source, and a first node; a first capacitor coupled between the first node and a second node; a second capacitor coupled between the first node and the organic light emitting diode; a fourth transistor coupled to a second scan line, a data line, and the first node; a sixth transistor coupled to a first scan line, a first power source, and the second node; a second transistor coupled to the second scan line, the second node, and a third node; a third transistor coupled to an emission control line, the first power source, and the third node; and a first transistor coupled to the second node, the third node, and the organic light emitting diode. |
| US08736520B2 |
Electro-optical device
An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period. |
| US08736517B2 |
Wireless augmented reality communication system
The system of the present invention is a highly integrated radio communication system with a multimedia co-processor which allows true two-way multimedia (video, audio, data) access as well as real-time biomedical monitoring in a pager-sized portable access unit. The system is integrated in a network structure including one or more general purpose nodes for providing a wireless-to-wired interface. The network architecture allows video, audio and data (including biomedical data) streams to be connected directly to external users and devices. The portable access units may also be mated to various non-personal devices such as cameras or environmental sensors for providing a method for setting up wireless sensor nets from which reported data may be accessed through the portable access unit. The reported data may alternatively be automatically logged at a remote computer for access and viewing through a portable access unit, including the user's own. |
| US08736515B2 |
Graphics card, multi-screen display system and synchronous display method
A graphics card, a multi-screen display system and a synchronous display method are disclosed. The disclosed method includes the following steps. Firstly, first clock signals are provided in parallel in response to a first clock signal transferred from a motherboard. A second clock signal is generated according to one of the first clock signals that are provided in parallel, wherein the oscillation frequency of the first clock signals is larger than the oscillating frequency of the second clock signal. Then, a set of display clocks are generated based on the second clock signal. The set of display clocks control the display of a set of screens, for synchronous multi-screen display. |
| US08736514B2 |
Antenna
The antenna includes a first ground plate, a first dielectric substrate formed on the first ground plate, a transmission line made of a conductive material formed on the first dielectric substrate, and a plurality of antenna elements electromagnetically coupled to the transmission line. The transmission line is constituted of at least one first line serving as a resonator having a resonator length equal to (2n−1)/2 times (n being a positive integer) a guide wavelength of the transmission line and a plurality of second lines each having an electrical length longer than half the guide wavelength, the first and second lines being disposed alternately at predetermined intervals. Each of the antenna elements is electromagnetically coupled to a corresponding one of the second lines. |
| US08736513B2 |
Dielectrically loaded antenna and radio communication apparatus
A backfire dielectrically loaded antenna for operation at a frequency in excess of 200 MHz includes a dielectric core having a relative dielectric constant greater than 5 and having an outer surface defining an interior volume the major part of which is occupied by solid material of the core; a three-dimensional antenna element structure including at least one pair of elongate conductive antenna elements disposed on or adjacent the side surface portion of the core and extending from a distal core surface portion towards a proximal core surface portion; a feed structure having an axially extending elongate laminate board including a transmission line section acting as a feed line which extends through a passage in the core from the distal core surface portion to the proximal core surface portion, and an antenna connection section having an integrally formed proximal extension of the transmission line section the width of which, in the plane of the laminate board, is greater than the width of the passage; and an impedance matching section coupling the antenna elements to the feed line. |
| US08736512B2 |
Item mounting system
The invention relates to apparatus and a method to allow the adjustment of a position of an item, such as an antenna of satellite broadcast receiving apparatus so as to allow the elevation and/or azimuth position to be fixed accurately. Adjustment means are provided which have an axis of rotation offset to the center axis of a body portion of the rotatable member to allow the body portion side walls to act as a cam. |
| US08736510B2 |
Impedance matching method, impedance matching apparatus for the same, and record medium
Disclosed are an impedance matching method, an impedance matching apparatus for the same, and a record medium. The impedance matching apparatus includes a storage part to store information about an impedance matching point according a state of an obstacle, an impedance matching part connected to an antenna and including at least one variable element, a detector to detect transmit power and reflected power reflected by the antenna, and a controller to search for an impedance matching point within a variation range of the variable element by using at least one of the transmit power and the reflected power, and to detect a state of a surrounding obstacle by comparing information about the searched impedance matching point with the stored information about the impedance matching point. |
| US08736505B2 |
Phased array antenna
A dual-polarized antenna array is disclosed. The antenna array includes a plurality of self supporting, electrically conductive members. Tapered elements of neighboring electrically conductive members define tapered slots that form part of radiating structures. The radiating structures additionally include a slot line in communication with the tapered slot. A back cavity can be included as part of a BALUN structure that is integral to an electrically conductive member. |
| US08736504B1 |
Phase center coincident, dual-polarization BAVA radiating elements for UWB ESA apertures
The present disclosure is directed to a dual polarized antenna array including a first BAVA (a horizontal polarization input), a second BAVA (a vertical polarization input), and a cradle assembly. The substrates of the first and second BAVAs each include a notched portion. The cradle assembly includes a base plate having four channel modules connected thereto. Edge portions of the substrates of the first and second BAVAs are received by the cradle assembly via channels of the channel modules and apertures of the base plate. The substrates of the BAVAs are interleaved via their notched portions so that the substrate of the second BAVA is an orthogonal orientation relative to the substrate of the first BAVA. |
| US08736499B2 |
Antenna enclosed within an animal training apparatus
An animal training apparatus including an electrical conductor embedded within a flexible member, and a housing having a through-opening for receiving the electrical conductor therethrough. The flexible member is molded around the electrical conductor and the antenna, while the electrical conductor is positioned such that it extends into the housing through the through-opening. As a result of the molding process, the flexible member shields the housing through-opening, discouraging substances such as water from accessing the interior of the housing via the through-opening. |
| US08736488B2 |
Base station almanac assisted positioning
A database provides base station almanac information pertaining to more than one network mode of communication. A wireless device accesses this database through a centralized server or network, or via the base station, base station controller or the like, with which it is currently communicating. |
| US08736484B2 |
Enhanced-resolution phased array radar
A system and method for increasing the effective angular resolution of a multi-function phased array radar system is provided. The system is operative to simultaneously transmit a plurality of overlapping sub-beams covering a representative central beam. A de-convolution process is applied to received return signals. The process includes determining the reflectivity within sub-beamwidth resolution cells defined by the overlapping sub-beams. Generated sub-beamwidth data provides the radar system with an effective angular resolution beyond that of any single transmitted beam. |
| US08736483B2 |
Collision avoidance apparatus
A collision avoidance apparatus capable of executing an appropriate vehicle control in order to avoid a collision between an own vehicle and a movable object is provided. A collision avoidance apparatus for avoiding a collision between an own vehicle and a movable object includes: a laterally-existing movable object detector for detecting for a movable object that approaches from a direction lateral to the own vehicle; a side collision determination section for determining whether or not a risk that the own vehicle and the movable object collide with each other is high, when the laterally-existing movable object detector has detected the movable object that approaches from the direction lateral to the own vehicle; a passage and avoidance determination section for determining, when the risk that the own vehicle and the movable object collide with each other is determined to be high, whether or not a possibility that a collision between the own vehicle and the movable object can be avoided by the own vehicle passing in front of the movable object, is high; and an accelerated state/decelerated state controller for controlling the own vehicle to be in one of an accelerated state and a decelerated state, according to a determination result of the passage and avoidance determination section. |
| US08736480B1 |
Successive approximation analog-to-digital conversion architectural arrangement for receivers
An apparatus and method of successive approximation analog-to-digital conversion for receivers comprising that during a sample mode, connecting an array of capacitors to a plurality of sampling switches coupled to a plurality of amplified input signals, and during a conversion mode, connecting in common the array of capacitors to a comparator and isolating the array of capacitors from the plurality of sampling switches. Additionally, filtering is done by the summation of samples at phase offsets. |
| US08736478B2 |
Digital-to-analog converter
A digital-to-analog converter (DAC) has a pulse-width encoder that generates a charging pulse having a pulse width proportional to the DAC's digital input value. The charging pulse controls a charging switch that selectively connects a current source to a capacitor for the duration of the charging pulse. At the end of the charging pulse, a voltage corresponding to the charge stored in the capacitor forms the DAC's analog output signal. Such DACs can be configured (1) with negative-gain amplifiers across the capacitor to form a negative feedback loop, (2) with multiple parallel current sources, and/or (3) in differential architectures. |
| US08736475B1 |
FIRDAC with RTZ/RTO voltage-mode elements
A FIRDAC with a return-to-zero or return-to-open drive uses multiple DACs receiving delayed copies of a digital input data signal to reduce thermal noise and intersymbol interference to produce a summed analog output. The SNR of sigma-delta ADCs using current-source-based DACs is significantly limited by the thermal noise of the DAC current sources. DACs using a switched voltage connected via a resistor or other passive element are quieter, but in a non-return-to-zero configuration tend to suffer from intersymbol interference if used at GHz clock frequencies. The intersymbol interference can be avoided by using a return-to-zero or return-to-open drive using multiple DACs clocked on successive half clock cycles (a finite-impulse-response DAC). |
| US08736473B2 |
Low power high dynamic range sigma-delta modulator
A low power, high dynamic range sigma-delta modulator comprises a quantizer followed by a digital integrator for generating an integrated digital signal from a quantized signal. The output of the digital integrator is coupled to a digital-to-analog converter in the feedback loop of the sigma-delta modulator. |
| US08736472B2 |
Volume adjusting circuit and volume adjusting method
A volume adjusting circuit which converts a digital audio signal to an analog signal by a D/A converter and outputs the analog signal includes: a first gain variable circuit unit which controls a gain of the digital audio signal; a second gain variable circuit unit which controls a gain of the analog signal output from the D/A converter; a storage unit which stores gain setting value; and a control unit which controls the gain of the first gain variable circuit unit and the gain of the second gain variable circuit unit based on the gain setting value stored in the storage unit, wherein the storage unit and the control unit are shared in controlling the first gain variable circuit unit and in controlling the second gain variable circuit unit. |
| US08736462B2 |
System and method for traffic information delivery
A system and method for traffic information delivery may be implemented as a static network device for sharing information with network nodes. The system includes a processor in communication with a transceiver and memory, the memory containing code that when executed by the processor effects the method steps for determining an occurrence of a traffic incident within a defined distance from the device, establishing communication with a network node, receiving a device identifier over a public network from the network node, the device identifier based on a user-configurable parameter and a non-user-configurable parameter of the network node, establishing in response to the device identifier matching an authorized device identifier corresponding to a known network node, a secure private network with the network node, and sending information about the traffic incident to the network node via the secure private network. |
| US08736459B2 |
Control system and method of operating a back-and-forth cable system
A control system and a method for a back-and-forth cable system is provided. The cable system includes a running cable, a first pulley and a second pulley, the pulleys being located at both ends of a course for guiding the running cable. A controllable motor assembly drives of the pulleys and a carrier is connected to the running cable, for pulling or towing a boarder. The control system includes first and second tracking devices to generate first and second tracking signal indicative of the rotation of the pulleys. Two limit positions along the course are stored in storing means and a controller has inputs to receive the first and the second tracking signals and inverts rotation of the controllable motor assembly when the two positions of the carrier detected go beyond either one of the two limit positions. |
| US08736458B2 |
Weigh-in-motion scale
A system includes a camera, a weigh-in-motion scale, and a processor. The camera is configured to capture one or more images of a vehicle as the vehicle goes over the weigh-in-motion scale. The weigh-in-motion scale is configured to generate one or more weight measurements of the vehicle as the vehicle goes over the weigh-in-motion scale. The processor is operatively coupled to the camera and the weigh-in-motion scale. The processor is configured to determine an acceleration of at least a portion of the vehicle based at least in part on the one or more images of the vehicle. The processor is also configured to adjust at least one of the one or more weight measurements based on the acceleration. |
| US08736456B2 |
Gas sensing method and instrument therefor
A method and instrument capable of producing an audible tick that increases with detected gas concentrations, is suitable for indicating relatively low levels of gas concentrations, and enables the adjustment of the tick rate to provide an accurate audible indication of gas levels at higher concentrations. The method and instrument entail sensing the presence of the gas and generating an analog sensor output based on a concentration of the gas in the environment, and then processing the analog sensor output through an audio circuitry to generate therefrom an audible tick having a frequency in proportion to the analog sensor output. The processing step includes the use of an analog control loop signal to selectively increase and decrease the frequency of the audible tick. |
| US08736454B2 |
Microprocessor controlled security tag
A microprocessor controlled security tag and accompanying security system is described. The tag generally includes a housing having external contacts to interface with elongated contacts on a connecting band. The band forms a complex impedance circuit with a patient's limb that allows detection features such as removal and band compromise. A microprocessor and related circuitry as well as a transmitter and receivers are enclosed in the housing. The tag is adapted to communicate inductively with an activator/deactivator unit as well as a tag programmer that updates and changes tag features in the tag firmware. The overall system further includes a hub to receive the data from a plurality of tags in the system. The tag can also communicate with a phased multiple antenna that sends signals to the tag. |
| US08736450B2 |
Theft deterrent device
An apparatus to deter theft of a movable product is provided. In one aspect, the apparatus comprises a housing, a plug connected to the housing to insert into an electrical socket to receive power, a bracket connected to the housing and having an opening to receive a locking cable while the opening of the bracket protrudes from the housing. A switch, within the housing, responsive to protrusion of the opening of the bracket from the housing to receive the locking cable. An electrical circuitry, within the housing, responsive to the switch being in a first state, and absence of power at the plug to sound an alarm, and responsive to the switch being in a second state or the presence of power at the plug to prevent sounding of the alarm. |
| US08736446B2 |
Security sensor system
Since a sensor signal intermitted on the basis of a sensor signal including an abnormality detection signal, detected as a result of a persistence of an abnormal condition of a security sensor, is generated and an intermitted output signal in dependence on an intermitted sensor signal input is transmitted from a wireless transmitter 17 to a receiver 18, a condition in which the intermitted output signal can be transmitted from the wireless transmitter 17 to the receiver 18 can be retained even though the wireless transmitter 17 is of a type capable of transmitting an output signal in the form of, for example, one pulse on the basis of the signal input, and it is therefore possible for the side of the receiver 18 to recognize assuredly the persistence of the abnormal condition. |
| US08736445B2 |
Object locating system
An object locating system comprising a first transmitter-receiver unit including a first transmitter for selectively transmitting a first and/or a second search signal, a first receiver for receiving a third search signal and a first signaling element coupled to the first receiver for issuing a first alarm when the third search signal is received by the first receiver; a second transmitter-receiver unit including a second transmitter for selectively transmitting the first and/or the third search signal, a second receiver for receiving the second search signal and a second signaling element coupled to the second receiver for issuing a second alarm when the second search signal is received by the second receiver; a receiver unit including a third receiver for receiving the first search signal and a third signaling element coupled to the third receiver for issuing a third alarm when the first search signal is received by the third receiver. |
| US08736442B2 |
Automatic identification and storage of frequently visited locations
Disclosed herein are systems, methods, and non-transitory computer-readable storage media for automatically generating and updating a list of previously visited locations that are popular to a user. The method includes receiving a data point belonging to a series of data points generated from periodically sampling a position of an electronic device, automatically determining if the data point represents a destination of the electronic device based upon metadata of the data point, and automatically updating a visited locations list based upon the data point, the visited locations list including an entry associated with a previously visited location of the electronic device, wherein the data point is combined with the entry when the position associated with the data point and the previously visited location are correlated. |
| US08736441B2 |
System for seamless and secure networking of implantable medical devices, electronic patch devices and wearable devices
A system level scheme for networking of implantable devices, electronic patch devices/sensors coupled to the body, and wearable sensors/devices with cellular telephone/mobile devices, peripheral devices and remote servers is described. |
| US08736440B2 |
Early alert system and method for livestock disease detection powered by hybrid alternative energy sources
An early alert system and a method for livestock disease detection are disclosed. An activity measurement zone (AMZ) is defined near an incentive device (e.g. food or water dispensing system) with an RFID tag reader and/or an RFID antenna. An animal's access into the AMZ is tracked and counted with an RFID tag attached to the animal. If the animals' activity relative to the AMZ drops to an alarmingly low level (e.g. dropping below an alert trigger point) over time, then a user of the alert system is informed of a potential health problem of the animal and may also be encouraged to inspect the animal in person for further determination of its current health and potential medical issues. The early alert system may be powered by hybrid alternative energy sources for rural or remote areas, which may have inconvenient or expensive access to conventional electrical power lines. |
| US08736432B2 |
Touch sensor having a selectable sensitivity level and method of selecting a sensitivity level of a touch sensor
A touch sensor assembly having a selectable sensitivity level allows for a user to activate a touch sensor while wearing hand covers. The touch sensor assembly includes a touch sensor, a comparison unit, and a control unit. The touch sensor has a selectable sensitivity level, and detects a value corresponding to a capacitance of the touch sensor. The comparison unit has a predetermined threshold stored therein, and determines activation of the touch sensor if the detected value exceeds the predetermined value. The control unit is operable to select a sensitivity level of the touch sensor by varying the predetermined threshold by an amount unrelated to an environmental effect on the touch sensor. |
| US08736430B2 |
Equipment and method for controlling a wireless communication terminal
A sensor pad (105) is adapted to be worn and operated by a user (100) to control a separate wireless communication terminal (103) carried by the user. The sensor pad includes a plurality of discrete sensors each operable to produce an indication signal indicating proximity of a user's finger to the sensor and a controller, responsive to receipt of indication signals from a plurality of the sensors, to produce a control signal for delivery to the wireless communication terminal to produce selection of a functional operation of the wireless communication terminal. Also described is a terminal for use with the sensor pad and also equipment and a method of operation. |
| US08736426B2 |
Methods and apparatus for identifying and categorizing distributed devices
Systems for identifying and categorizing distributed devices, e.g., lighting fixtures and thermostats, is disclosed. In an embodiment, a user (200) sends a low power discovery message to devices (201) using a portable programming tool (100). The devices (201) within range respond with identification information. The portable programming tool (100) organizes the responses by proximity and sends a “flash” message to the device with the closest perceived proximity. That device responds with a visual or audible signal (202), allowing the user (200) to determine whether that device is the one intended for selection. If so, the user initiates a store routine in which identification information, including category information, is stored in one or more locations, such as, the selected device (201), the portable programming tool (100), and/or a central or local controller (1100). The identification and categorization can, for example, be used to automate load shedding and to reduce energy consumption. |
| US08736424B2 |
Systems and methods for performing secure financial transactions
An RFID system includes an RFID tag, an RFID reader, and a server. The RFID tag communicates to the server via encrypted information. The information may be encrypted with synchronized encryption keys. In this manner, the reader need not decrypt the information from the RFID tag. The effectiveness of malicious readers is thereby reduced, resulting in improved RFID tag security. |
| US08736421B2 |
Biometric information processing apparatus and biometric information processing method
A biometric information processing apparatus includes: a calculation unit that calculates the direction of each of characteristic lines included in biometric information extracted from a user; a smoothing unit that smoothes each of the characteristic lines; a difference calculation unit that calculates a difference between the direction of each of the characteristic lines and the direction of each of the smoothed characteristic lines; a detection unit that detects, as a change candidate area, a potentially changeable area in the biometric information based on each of the calculated differences; and an estimation unit that estimates the future authentication accuracy using the biometric information, based on the detected change candidate area. |
| US08736420B2 |
Methods, systems, and products for controlling devices
Methods, systems, and products are disclosed for controlling a device. A signal is received and a power of the signal is determined. The power is associated to a command, and the command is executed. |
| US08736417B2 |
Remotely controlling one or more client devices detected over a wireless network using a mobile device
According to one general aspect, a method according to the present application includes remotely controlling wirelessly networked devices via a mobile unit. The method includes receiving, at a mobile unit and from a user, an input, analyzing the input to identify a networked device associated with the input, determining whether the networked device is presently accessible via a wireless network; determining whether to establish a connection with the networked device based on whether the networked device is determined to be presently accessible via the wireless network. The method also includes establishing a connection with the networked device if it is determined that the networked device is accessible via the wireless network and enabling the user to interact with the networked device through the mobile unit to remotely control the networked device. |
| US08736414B2 |
Magnetic power converter
A magnetic power converter has a core that has at least a first leg and a second leg. In addition, the magnetic power converter has an output coil positioned around the second leg and a toroid integrated into the first leg, the toroid comprising a permanent magnet and an first input coil, the input coil positioned relative to the permanent magnet, such that when an alternating current (A/C) is applied to the first input coil, permanent magnet magnetic flux produced by the permanent magnet is displaced and travels through the second leg. |
| US08736413B2 |
Laminated type inductor element and manufacturing method therefor
In a laminated inductor element, a magnetic ferrite layer sandwiched between two conductor patterns is thinner than other magnetic ferrite layers. Therefore, a crack occurs in the magnetic ferrite layer due to firing. As a result of the occurrence of this crack, a stress applied to each layer is relaxed, and it becomes possible to avoid warpage, a crack, or the like. In addition, in the laminated type inductor element, the two conductor patterns are electrically connected by two via holes, and subjected to a same potential. Since the two conductor patterns correspond to a same wiring pattern and a coil of coil conductor is defined by the two conductor patterns, even if upper and lower coil conductors are electrically in contact with each other due to the crack, the two conductor patterns are not put into a short-circuited state. |
| US08736412B2 |
Magnetic element
A magnetic element may include a first core member, a second core member facing the first core member along an entire outer periphery thereof, a coil, and a base shaped body on which the first core member and the second core member are placed. The base shaped body is provided with a base member and a terminal member, and the terminal member is provided with a binding terminal part, which projects outward in a first corner part of the base member and projects from the base member on a side lower than a portion of a winding frame part side of one flange part. The second core member is provided with a cutout part at a portion corresponding to the first corner part of the base member for allowing insertion of an end drawn out from the winding frame part in a state of not contacting the second core member. |
| US08736411B2 |
Transformer structure
A transformer includes a winding member, a magnetic core assembly and an insulating seat. The winding member includes a bobbin, a primary coil and a secondary coil. The primary coil and the secondary coil are wound on the bobbin. The magnetic core assembly includes a first magnetic core and a second magnetic core. The winding member is arranged between the first magnetic core and the second magnetic core. The insulating seat includes a receptacle, at least one ventilation hole, at least one sheltering member and plural pins. The winding member and the magnetic core assembly are accommodated within the receptacle. The ventilation hole is formed in the sheltering member. The first terminals of the primary coil and/or the second terminals of the secondary coil are connected with the pins. |
| US08736408B2 |
Magnetic anchor
A magnetic anchor that is attachable to a computing unit via a magnetic field. The magnetic anchor further includes a locking mechanism that enables its attachment/detachment to a surface area of the computing unit—and further connects to a cable that is fastened to a secured location. |
| US08736406B2 |
Lid lock with magnetic anti-tamper feature
A latch for a washing machine or other appliance provides two interengaging elements on a lid and housing each having a magnet oriented for mutual repulsion. Proper repulsion of the magnets is necessary to signal that the lid is properly closed such as may be used to determine if the appliance may be locked and safely operated, for example, in a clothes spinning mode. |
| US08736405B2 |
Microelectromechanical device provided with an anti-stiction structure, and corresponding anti-stiction method
An embodiment of a microelectromechanical device having a first structural element, a second structural element, which is mobile with respect to the first structural element, and an elastic supporting structure, which extends between the first and second structural elements to enable a relative movement between the first and second structural elements. The microelectromechanical device moreover possesses an anti-stiction structure, which includes at least one flexible element, which is fixed only with respect to the first structural element and, in a condition of rest, is set at a first distance from the second structural element. The anti-stiction structure is designed to generate a repulsive force between the first and second structural elements in the case of relative movement by an amount greater than the first distance. |
| US08736402B2 |
Elastic wave filter device with IDT electrodes that include a narrower-pitch portion
An elastic wave filter device having improved sharpness of filter characteristics includes a longitudinally-coupled resonator-type elastic wave filter section including first to third IDT electrodes each including a plurality of electrode fingers, and first and second reflectors. The first to third IDT electrodes include narrower-pitch portions provided in end portions thereof, which are each adjacent to another IDT electrode in a direction of propagation of elastic waves, each of the narrower-pitch portions having a smaller period of electrode fingers than a period of electrode fingers in the remaining portion of the relevant IDT electrode. The number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the first IDT electrode, and the number of electrode fingers in the narrower-pitch portion of the second IDT electrode, which is disposed on the side closer to the third IDT electrode, differ from each other. |
| US08736399B2 |
Triplexer topology
An apparatus comprising a first filter, a second filter, a third filter, and a fourth filter. The first filter may comprise a low pass filter having a first bandwidth and configured to present a first output signal in response to an input signal received at an input port of the apparatus. The second filter may comprise a high pass filter having a second bandwidth and configured to present a second output signal in response to the input signal received at the input port of the apparatus. The third filter may comprise a low pass filter having a third bandwidth and configured to present a third output signal in response to the second output signal. The fourth filter may comprise a high pass filter having a fourth bandwidth and configured to present a fourth output signal in response to the second output signal. |
| US08736397B2 |
Ku-band coaxial to microstrip mixed dielectric PCB interface with surface mount diplexer
A coaxial to microstrip transition is introduced in a multi layer mixed dielectric printed circuit board environment that provides a 50 Ohm impedance system between a coaxial antenna feed and a surface mount diplexer at Ku-band frequencies. The 50 Ohm transition from the coaxial antenna feed to the diplexer at microwave frequencies lossy FR-4 style laminate is provided by constructing a PCB internal coax using the center conductor of the antenna feed and a dual ring of plated through hole VIAs. The transition from the PCB internal coax to the microstrip section of the high frequency laminate PCB layer uses a “D”-style opening in the ground layer and a VIA ring arrangement between the layers to optimize or tune the performance of the transition. Additional features in the interface construction are implemented to guaranty that its microwave and mechanical performance does not degrade in extreme environmental conditions. |
| US08736394B2 |
Reference frequency generating device
To provide a reference frequency generating device that can output a highly accurate reference frequency signal even if a reference signal becomes unable to be acquired. The reference frequency generating device includes a synchronization circuit, a temperature sensor, and a controller. The synchronization circuit controls a reference frequency signal outputted from a voltage controlled oscillator, by a control signal obtained based on a reference signal. The temperature detector detects a temperature of the voltage controlled oscillator being used. When the reference signal is unable to be acquired, the controller corrects a voltage controlled signal in consideration of a distortion in the aging characteristic of the voltage controlled oscillator based on a rate of change with time in a slope of the oscillator temperature, and generates a holdover control signal based on corrected contents to control the voltage controlled oscillator. |
| US08736393B2 |
Variable capacitance integrated electronic circuit module
A digitally controlled variable capacitance integrated electronic circuit module (100) comprises a set of basic cells in a matrix arrangement. Each basic cell itself comprises a functional block (11) which can be switched between two individual capacitance values, a control block (12), and a control junction connecting the control block and the functional block of said basic cell. The functional blocks and the control blocks are grouped into separate regions (110, 120) of the matrix arrangement, to reduce capacitive interaction between output paths and power supply paths of the module. The functional blocks can still be switched in a winding path order within the matrix arrangement. A module of the invention can be used in an oscillator capable of producing a signal at 4 GHz. |
| US08736392B2 |
Transformer-based CMOS oscillators
Techniques for providing transformer-based CMOS oscillators capable of operation with low voltage power supplies. In an exemplary embodiment, an LC tank is provided at the drains of a transistor pair, and the inductance of the LC tank is mutually magnetically coupled to an inductance between the gates of the transistor pair. A separate complementary transistor pair is also coupled to the LC tank. A further exemplary embodiment provides an LC tank at the gates of a transistor pair, as well as for three-way coupling amongst a tank inductance, an inductance between the gates of the transistor pair, and an inductance between the gates of a complementary transistor pair. |
| US08736390B2 |
Crystal oscillation device and semiconductor device
A wiring pattern for oscillation input signal and a wiring pattern for oscillation output signal are provided on a printed circuit board, and a wiring pattern for ground power source voltage is arranged in a region therebetween. A quartz crystal unit is connected between the wiring pattern for oscillation input signal and the wiring pattern for oscillation output signal and one ends of capacitors serving as load capacitors thereof are connected to the wiring pattern for ground power source voltage. Further, a wiring pattern for VSS is arranged so as to enclose these wiring patterns, and a wiring pattern for VSS is arranged also in a lower layer in addition thereto. By this means, reduction of a parasitic capacitance between an XIN node and an XOUT node, improvement in noise tolerance of these nodes and others can be achieved. |
| US08736384B2 |
Delay line calibration
In some embodiments, provided are calibration techniques for measuring mismatches between TDL delay stage elements, and in some cases, then compensating for the mismatches to minimize performance degradation. |
| US08736379B1 |
Input match network for a power circuit
A power circuit includes a RF transistor and an input match network coupled to an input to the RF transistor and to an input to the power circuit. The input match network includes a resistor, an inductor and a capacitor that are coupled together in series between the input to the RF transistor and a ground. The values of the resistor and the inductor are selected to match an input impedance of the RF transistor to a source impedance at the input to the power circuit over at least a portion of a high frequency range, wherein the value of the capacitor has a substantially negligible contribution to the match at the high frequency range. The value of the capacitor is selected so that the series combination of the resistor, the inductor and the capacitor substantially reduce the magnitude of the impedance presented to the input of the RF transistor in a low frequency range relative to the source impedance at the input to the power circuit. |
| US08736378B1 |
Reconfigureable output matching network for multi band RF power amplifier
An output matching network comprising a plurality of impedance matching circuits. The inputs of each of the plurality of impedance matching circuits are connected to a first input of the output matching network. The outputs of each of the plurality of impedance matching circuits are connected to a plurality of first outputs of the output matching network. One of the plurality of impedance matching circuits is active at a given time. The active impedance matching circuit of the plurality of impedance matching circuits exhibits a first input impendence at a first frequency band. Each inactive impedance matching circuit of the plurality of impedance matching circuits exhibits a second input impedance at the first frequency band. The second input impendence is at least 10 times greater than the first input impendence. |
| US08736377B2 |
RF pulse edge shaping
A radio frequency (RF) generation module includes a power control module that receives first and second desired amplitudes of an output of the RF generation module in first and second respective states, and that outputs, based on the first and second desired amplitudes, input power setpoints corresponding to a transition from the first state to the second state. A frequency control module receives the input power setpoints and outputs frequency setpoints corresponding to the input power setpoints. A pulse shaping module receives the input power setpoints, the frequency setpoints, and an indication of when to transition from the first state to the second state, and transitions the output of the RF generation module from the first state to the second state based on the input power setpoints, the frequency setpoints, and the indication. |
| US08736376B2 |
Power amplifier module having bias circuit
There is provided a power amplifier module having a bias circuit, in which a bias power is supplied to an amplifier by differently setting an impedance between an input signal terminal and a reference power terminal and an impedance between the input signal terminal and a ground. The power amplifier module includes: an amplifier unit receiving a bias power to amplify an input signal; and a bias unit supplying the bias power to the amplifier, by differently setting an impedance between an input signal terminal transmitting the input signal therethrough and a reference power terminal transmitting a reference power having a predetermined voltage level and an impedance between the input signal terminal and a ground. |
| US08736354B2 |
Electronic device and method providing a voltage reference
An electronic device includes a bandgap reference voltage generation stage. The bandgap reference voltage generation stage comprises a device with a PN-junction, a current source feeding a first current during a first period of time and a second higher current during a second period of time through the PN-junction. The bandgap reference voltage is generated from a combination of a first voltage drop across the PN-junction during the first period of time and a second voltage drop across the PN-junction during the second period of time. This bandgap reference voltage is formed using switched capacitors. |
| US08736349B2 |
Current limit circuit apparatus
The present invention provides a current limit circuit apparatus, coupled with the gate of a GaN transistor. The current limit circuit comprises a diode, a first transistor, a second transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The source and the drain of the first transistor couple with the diode. The source of the second transistor couples with the gate of the first transistor. The source of the first transistor couples with the first transistor. The source of the second transistor couples with the second resistor. The third resistor couples with the fourth resistor and the gate of the first transistor. The first transistor turned off and the gate current is limited. When the current of the gate of the GaN transistor exceeds the predetermined value, the breakdown voltage is increased by limiting the gate current. |
| US08736340B2 |
Differential clock signal generator
Disclosed is a differential clock signal generator which processes a first differential clock signal using a combination of differential and non-differential components to generate a second differential clock signal. Specifically, the first differential clock signal is converted into a single-ended clock signal, which is used either by a finite state machine to generate two single-ended control signals or by a waveform generator to generate a single-ended waveform control signal. In any case, a deskewer, which comprises a pair of single-ended latches and either multiplexer(s) or logic gates, processes the first differential clock signal, the single-ended clock signal, and the control signal(s) in order to output a second differential clock signal that is different from the first differential clock signal in terms of delay and, optionally, frequency, but synchronously linked to it. |
| US08736334B2 |
Current mode logic latch
A current mode logic latch may include a first hold stage transistor coupled at its drain terminal to the drain terminal of a first sample stage transistor. A second hold stage transistor is coupled at its drain terminal to the drain terminal of a second sample stage transistor, coupled at its gate terminal to the drain terminal of the first hold stage transistor, and coupled at its drain terminal to a gate terminal of the first hold stage transistor. A first hold stage current source is coupled to a source terminal of the first hold stage transistor. A second hold stage current source is coupled to a source terminal of the second hold stage transistor. The hold stage switch is coupled between the source terminal of the first hold stage transistor and the source terminal of the second hold stage transistor. |
| US08736333B1 |
Schmitt trigger circuit with near rail-to-rail hysteresis
Schmitt trigger with rail-to-rail or near rail-to-rail hysteresis. In some embodiments, a method includes switching an output of a Schmitt trigger from a first logic state to a second state in response to an input meeting a threshold, where the threshold is applied to a first transistor of a first doping type and the input is applied to a second transistor of the first doping type, the first and second transistors operably coupled to each other through a current mirror of a second doping type. The first doping type may be an n-type, the second doping type may be a p-type, and the threshold may be a rising threshold having a value within 10% of a supply voltage. Alternatively, the first doping type may be a p-type, the second doping type may be an n-type, and the threshold may be a falling threshold having a value within 10% of ground. |
| US08736332B2 |
Leakage current reduction in a sequential circuit
A system and device for reducing leakage current in a sequential circuit is disclosed. In one embodiment, a system for reducing leakage current in a sequential circuit includes a combinational logic circuit, one or more reset flip-flops coupled to the combinational logic circuit, and one or more set-reset flip-flops coupled to the combinational logic circuit. The system further includes a control module coupled to the reset flip-flops and to the set flip-flops and configured to reset the reset flip-flops and to set the set-reset flip-flops when a standby mode of the sequential circuit is triggered. |
| US08736326B1 |
Frequency synthesizer and frequency synthesis method thereof
A frequency synthesizer and a frequency synthesis method thereof are provided. The frequency synthesizer includes a phase-locked loop unit, a voltage-controlled oscillating unit, and a frequency mixing unit. The phase-locked loop unit receives a reference signal and a feedback injection signal and generates a first oscillating signal according to the reference signal and the feedback injection signal. The voltage-controlled oscillating unit receives the feedback injection signal and generates a second oscillating signal according to the feedback injection signal. The frequency mixing unit is coupled to the phase-locked loop unit and the voltage-controlled oscillating unit, receives the first oscillating signal and the second oscillating signal, and mixes the first oscillating signal and the second oscillating signal to generate the feedback injection signal and an output signal. |
| US08736325B1 |
Wide frequency range clock generation using a single oscillator
A system for wide frequency range clock generation, includes: a phase lock loop (PLL) to generate a signal having a frequency; at least one fractional-N divider to divide the frequency of the signal; and a multiplexer to receive the signal from the PLL and an output signal from the at least one fractional-N divider, and to select the signal from the PLL or the output signal from the at least one fractional-N divider as a selected signal. |
| US08736323B2 |
Method and apparatus for on-chip phase error measurement to determine jitter in phase-locked loops
An apparatus includes a phase-locked loop (PLL) circuit including a phase-frequency detector configured to output phase error signals. A phase error monitor circuit is configured to determine instantaneous peak phase error by logically combining the phase error signals and comparing pulse widths of the logically combined phase error signals to a programmable delay time at each reference clock cycle to determine instantaneous phase error change. A storage element is configured to store the instantaneous phase error change. |
| US08736322B2 |
Voltage controlled oscillator calibration
A mobile communication device is provided that has a transceiver including a voltage controlled oscillator (VCO) and a calibration circuit for calibrating the VCO. The calibration circuit includes a logic block configured to estimate a calibration value for a tuning of the VCO to a desired frequency, and an asynchronous counter configured to execute a counting sequence to identify a frequency of the VCO after the tuning of the VCO using the calibration value, where the calibration circuit is configured to determine a tuned calibration value for producing the desired frequency from the counting sequence. |
| US08736318B2 |
Multiphase clock divider
A multiphase clock divider includes: a reference clock generator for generating a plurality of reference clocks; and at least one output clock generator including a first multiplexer for selecting to output a selected reference clock, a second multiplexer for selecting to output a first selected input clock, a third multiplexer for selecting to output a second selected input clock, a first flip-flop for outputting a first sampling clock according to the selected reference clock and the first selected input clock, a second flip-flop for outputting a second sampling clock according to the first sampling clock and the second selected input clock, and a fourth multiplexer for selecting to output the first sampling clock or the second sampling clock to generate an output clock. |
| US08736317B2 |
Frequency divider and phase locked loop including the same
A frequency includes a first edge detection unit configured to generate a first count signal responsive to detecting first edges of an input signal and a second edge detection unit configured to generate a second count signal responsive to detecting the first edges of the input signal in a first operation mode and to generate the second count signal responsive to detecting second edges of the input signal in a second operation mode. One of the first and second edges is a rising edge and the other of the first and second edges is a falling edge. A pulse triggered buffer unit generates an output signal responsive to the first and second count signals. The output signal is divided by a target division ratio with respect to the input signal that is an odd number division ratio in one mode and an even number division ratio in the other mode. |
| US08736313B2 |
Input buffer capable of expanding an input level
An input buffer includes a first amplification block, a second amplification block, and a buffer block. The first amplification block is configured to be driven by an external voltage, to differentially amplify an input signal and a reference voltage in response to a bias voltage, and to subsequently generate first and second differential signals. The second amplification block is configured to be driven by an internal voltage, to differentially amplify the first and second differential signals, and to generate an output signal. The buffer block is configured to be driven by the internal voltage, to buffer the output signal, and to output an inverted output signal. |
| US08736311B2 |
Semiconductor integrated circuit
A constant current source circuit includes one end connected to a second node as sources of third and fourth transistors, and the other end connected to a second power supply node that supplies a second voltage different from a first voltage. The clamp circuit is configured to form a current path between the second node and the second power supply node. It adjusts the potential of the second node to a certain potential when a first external input signal is switched from a first state to a second state. |
| US08736308B2 |
Pipeline power gating
Leakage current is reduced in a plurality of gates coupled between source storage elements and destination storage elements by waking the plurality of gates to allow current flow in response to assertion of any source clock enable signals that enable clocking of the source storage elements. The gates are slept to reduce leakage current in the plurality of gates, in response to assertion of a destination clock enable signal and all of the one or more source clock enable signals being deasserted, the destination clock enable signal enabling clocking of the destination storage elements. |
| US08736306B2 |
Apparatuses and methods of communicating differential serial signals including charge injection
Apparatuses and methods are disclosed, including an apparatus that includes a differential driver with charge injection pre-emphasis. One such apparatus includes a pre-emphasis circuit and an output stage circuit. The pre-emphasis circuit is configured to receive differential serial signals, and buffer the differential serial signals to provide buffered differential serial signals. The output stage circuit is configured to receive the buffered differential serial signals and drive the buffered differential serial signals onto differential communication paths. The pre-emphasis circuit is configured to selectively inject charge onto the differential communication paths to assist with a signal transition on at least one of the differential communication paths. Additional embodiments are disclosed. |
| US08736305B2 |
Input and output buffer including a dynamic driver reference generator
A system having an input and output buffer includes a dynamic driver reference generator to generate dynamic driver reference signals based on a data signal and an IO buffer supply voltage, a level shifter to generate level shifted signals based, in part, on the dynamic driver reference signals, and a driver having at least one stress transistor. The driver dynamically adjusts a voltage across the stress transistor based on at least one of dynamic driver reference signals, the level shifted signals, and a current state of an IO pad. |
| US08736303B2 |
PSOC architecture
A circuit with a plurality of analog circuit blocks, each configured to provide at least one analog function and a programmable interconnect coupled of the analog circuit blocks and configurable to interconnect combinations of the analog circuit blocks to one another. The circuit is formed in an integrated circuit (chip) and the programmable interconnect comprises a plurality of switches coupled between the analog circuit blocks and ports that provide signal connections for the chip. |
| US08736285B2 |
High temperature position sensor
A position sensor comprises first and second stationary poles with first and second electrodes, and a reference pole positioned therebetween. The reference pole is coupled to a shaft, and includes a semi-metal via that forms a conducting path between the first and second electrodes. The shaft positions the reference pole between the first and second stationary poles, and a resistance of the conducting path varies with a position of the shaft. |
| US08736281B2 |
Sensing system and method
A sensing system comprises a material having a matrix structure in which a plurality of sensing elements are embedded, the sensing elements having electron distribution and/or transport properties that change in response to a change in a physical or chemical property of the material. The sensing system further comprises a receiver, including an antenna, the receiver arranged to receive a source RF signal and a returned RF signal, the returned RF signal being received from the material. A change in the electron distribution and/or transport properties of the sensing elements cause the source RF signal to change, such that a change in a property of the material can be determined from the returned RF signal. A corresponding method of sensing a change in a property of a material is also provided. |
| US08736280B2 |
High speed data bus tester
A circuit for testing a high speed data bus comprises a test port, a data bus port, a signal generator, a polarity monitor, and an attenuation monitor. The test port is coupled to a test controller. The data bus port is coupled to the data bus. The signal generator may generate a test signal to the data bus port at a first voltage level with a duty cycle of fifty percent or greater. The polarity monitor may receive the test signal from the data bus port and generate a voltage that is proportional to the duty cycle and indicative of a polarity of a portion of the data bus. The attenuation monitor may receive the test signal from either the signal generator or the data bus port and determine a second voltage level of the received test signal, with the second voltage level being communicated to the test port. |
| US08736278B2 |
System and method for testing fuse blow reliability for integrated circuits
System and method for testing the reliability of a fuse blow condition. The fuse blow detection circuit includes a fuse circuit comprising a fuse having a first end coupled to ground. A common node is coupled to the second end of the fuse. A pre-charge circuit is coupled to the common node for pre-charging the common node to a pre-charged HIGH level. An inverter includes an inverter output and an inverter input, wherein the inverter input is coupled to the common node. A feedback latch is coupled between a voltage source and ground, and includes a latch input that is coupled to the inverter output and a latch output coupled to the common node. A test circuit is included that is coupled to the common node, wherein in a normal mode the test circuit adds strength to the feedback latch for purposes of maintaining the common node at the pre-charged HIGH level, such that in a test mode the feedback latch is weaker than in the normal mode for purposes of maintaining the common node at the pre-charged HIGH level. |
| US08736277B2 |
Integrated transformers
Systems, methods and devices directed to transformers are disclosed. One transformer system includes a set of transformer cells and a controller. The set of transformer cells is coupled in series to form a series coupling, where each transformer cell includes at least one first coil and at least one second coil. The second coil is configured to receive electrical energy from the first coil through magnetic interaction. The controller is configured to modify electrical aspects at ends of the series coupling by independently driving the transformer cells such that at least one of the transformer cells is driven differently from at least one other transformer cell in the set. |
| US08736275B2 |
Alignment correction system and method of use
A system and method is provided for correcting alignment of a product on a tool and, more particularly, to a system and method for correcting alignment of a wafer on a chuck of a tool. The system is a tool including at least one contact near a circumference of the tool and a grounded contact proximate to the at least one contact. |
| US08736274B2 |
Method and apparatus for diagnosing electrochemical sensor
A method and apparatus for diagnosing an electrochemical sensor that detects the concentration of a gas are operative for diagnosing whether or not the sensor is in an error state due to a rise in a resistance in the electrolyte of the sensor. Such detection is made on the basis of a current flowing between a sensing electrode and an opposite electrode or a voltage corresponding to the current. A method for diagnosing an electrochemical sensor having a solid or liquid electrolyte between a sensing electrode and an opposite electrode detects the concentration of the gas to be detected on the basis of a current flowing between the sensing electrode and the opposite electrode, or a voltage corresponding to the current. Whether or not the electrochemical sensor is in an error state is diagnosed on the basis of a resistance of the electrolyte between the two electrodes of the electrolyte. |
| US08736273B2 |
Testing system and method for testing a battery cell
A testing system and a method for testing a battery cell are provided. The system includes a nest member that receives the battery cell, and a clamping device that secures a first battery tab between first and second connectors, and secures a second battery tab between third and fourth connectors. The system further includes a voltmeter that measures a voltage level between the first and third connectors when the first and second battery tabs are contacting the first and third connectors, respectively. The system further includes an ohmmeter that measures a first resistance level between a first portion of the outer housing and the first connector when the first battery tab is contacting the first connector. |
| US08736272B2 |
Adjustable spectrum LED solar simulator system and method
An adjustable spectrum LED solar simulator method and system which provides power to LEDs, senses the LED output, compares the LED output to a predetermined norm, and adjusts the LED outputs accordingly. An adjustable spectrum LED solar simulator system includes a multiplicity of LEDs of a number of different color wavelength ranges, an LED driver system for providing power to the LEDs, a sensor system for sensing the output of the LEDs and a controller responsive to the sensor system for comparing the color spectrum of the output of the LEDs to a desired solar spectrum and enables the driver system to adjust the power to the LEDs to more closely match the desired solar spectrum. The solar simulator system may include a modulator structure of hierarchical assemblies. Solar simulator calibration is also disclosed. |
| US08736267B2 |
Pressure vessel for non-destructive or non-contact material characterization
A method and apparatus for measuring a parameter of an object is disclosed. The object is placed within a vessel configured to contain the object via an opening in the vessel. A cover is placed over the opening. A securing device is used to secure the cover to the vessel. A measurement device is used to measure the parameter of the object at a raised pressure. The parameter can be a nuclear magnetic resonance parameter of the object. A fluid in the vessel can be heated to raise the pressure within the sealed vessel. In various embodiments, the securing device can be a second cover or a clamp, for example. The measured parameter can be used in determining a suitability of the object for use in downhole environments. |
| US08736262B2 |
Integrated magnetic sensor for detecting vertical magnetic fields and manufacturing process thereof
An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell. |
| US08736261B2 |
Sensor module
A sensor module includes a sensor, a cover, and a wiring unit. The cover holds the sensor and includes a connector configured to make a connection with an external device. The wiring unit is held by the cover, is arranged from the connector to the sensor, and includes a connecting member extending from the connector to a central region of the cover in its width direction, which is perpendicular to the central line, and a wiring member extending from the central region of the cover in its width direction to a vicinity of the sensor. The cover and connecting member are integrally formed from a mold material. The connecting member includes a first connecting terminal exposed from a surface of the mold material at the central region of the cover in its width direction. The wiring member includes a second connecting terminal conductively joined to the first connecting terminal. |
| US08736259B2 |
Rotation position sensor
A rotational position sensor includes a rotor substrate and a stator substrate placed to face each other to detect rotational displacement of the rotor substrate. The rotor substrate is formed with an excitation coil in a meandering pattern on an outer circumferential side and a rotor-side rotary transformer on an inner circumferential side. The stator substrate is formed with four detection coils in a meandering pattern on an outer circumferential side and a stator-side rotary transformer on an inner circumferential side. The four detection coils are arranged in a circumferential direction without overlapping each other. The detection coils are displaced from each other by 360°/8. The rotational position sensor includes a high frequency excitation circuit for applying a high frequency signal to the excitation coil through the rotor-side rotary transformer and the rotor-side rotary transformer to excite the excitation coil. |
| US08736257B2 |
Off-center angle measurement system
A method for measuring an angular position of a rotating shaft, the method including providing a magnetic field which rotates with the shaft about an axis of rotation, positioning an integrated circuit having first and second magnetic sensing bridges within the magnetic field at a radially off-center position from the axis of rotation, the first and second magnetic sensing bridges respectively providing first and second signals representative of first and second magnetic field directions, the integrated circuit having a set of adjustment parameters for modifying attributes of the first and second signals, modifying values of the set of adjustment parameters until errors in the first and second signals are substantially minimized, and determining an angular position of the shaft based on the first and second signals. |
| US08736248B2 |
Detection circuit and a method for detecting a wrong supply voltage
The present invention relates to a detection circuit for detecting that a power supply unit is connected to a wrong supply voltage. Said detection circuit comprises a first voltage divider (24, 26, 28) connected to the output terminals (20, 50) of a rectifier (16) of the power supply unit, a second voltage divider (26, 32) connected to a first power input terminal (10) of the power supply unit and to one of the output terminals (20, 50) of the rectifier (16), and a circuit breaker (14) connected to the first power input terminal (10) of the power supply unit and to an input terminal of the rectifier (16), wherein at least one partial voltage of each voltage divider (24, 26, 28; 26, 32) is used a signal (22, 46) for identifying the wrong supply voltage. The invention relates further to a method for detecting that a power supply unit is connected to a wrong supply voltage. |
| US08736243B2 |
Control multiplexor for a switch mode power supply
A digital circuit directs operation of a pulse width modulation or pulse frequency modulation controller varying its control between closed loop and open loop topology. An exemplary control plant could embody a step-down switch mode power supply providing a precise sequence of voltages or currents to any of a variety of loads such as the core voltage of a semiconductor unique compared to its input/output ring voltage. A state machine monitors pulse width or pulse frequency from the pulse width modulation or pulse frequency modulation controller, respectively, while either type of controller operates in its closed loop topology, to determine if the present power state of the system matches the predicted load as characterized from a predetermined model used in conjunction with design automation tools. The state machine averages pulse widths or pulse frequencies monitored in the closed loop topology. If the average deviates from the predicted pulse width or pulse frequency for the present power state, the state machine updates a corresponding value in a table of pulse width or pulse frequency values from which an open loop controller applying pulse width modulation or pulse frequency modulation, respectively, generates a near critical damped step response during system power state transitions or maintains a maximally flat voltage during system current transients. |
| US08736242B2 |
Buck circuit
A buck circuit of a computer includes a voltage input terminal, a voltage output terminal, first and second electronic switches, and first to third field effect transistors (FETs). When the computer is powered on, the signal control terminal of the computer outputs a first control signal to control the first FET to be turned on through the first and second electronic switches, and simultaneously controls the first and third FETs with a pulse width modulation (PWM) control chip. After the computer is powered off, the signal control terminal of the computer outputs a second control signal to control the first FET to be turned off through the first and second electronic switches, and to control the third FET through the PWM control chip. |
| US08736234B2 |
Power converter control apparatus
A power converter control apparatus includes a power converter part having a bridge circuit formed of a switching element and a field circuit controlling conduction of a field winding in an AC generator, and a control apparatus part having a field current detector, a temperature detector detecting a temperature of a generator part, the power converter part, or the control apparatus part, a field current instruction computation portion computing a field current instruction value of the generator, a temperature rise suppression portion computing a generated current suppression value on the basis of an output of the temperature detector and computing a field current suppression value on the basis of the computed generated current suppression value, a field current instruction selection portion selecting the field current instruction value or the field current suppression value whichever is the smaller, and a field current control portion controlling a field current. |
| US08736233B2 |
Power source device
A power source device for rectifying the output of an AC generator in which magneto coils are in a star-shaped connection in three phases. The device includes a control rectifier circuit configured from a first control rectifier circuit for performing full-wave rectification on three-phase AC voltages, and a second control rectifier circuit for performing full-wave rectification on AC voltages obtained between neutral and each of two-phase AC output terminals selected from the three-phase AC output terminals of the generator, as well as on AC voltage obtained between the selected two-phase AC output terminals; and a controller controlling the first and second circuits so that the output of the first circuit is supplied to the load when the rotational speed of the generator is equal/less than a set speed, and the output of the second circuit is supplied to the load when the rotational speed exceeds the set speed. |
| US08736230B2 |
System and method for rebalancing modules of a battery during vehicle operation
A system and method for rebalancing a battery in a vehicle during vehicle operation, the battery including a plurality of modules, is provided. The method may include determining when an automatic rebalance mode start condition is satisfied, modifying a target state of charge for the battery at least in part in response to the start condition being satisfied such that the target state of charge is raised from a standard operating value to a rebalance value, operating the vehicle with the target state of charge at the rebalance value, determining when an automatic rebalance mode end condition or an interrupt condition is satisfied, and modifying the target state of charge in response to the automatic rebalance mode end condition or the interrupt condition being satisfied such that the target state of charge is lowered from the rebalance value to the standard operating value. |
| US08736220B2 |
Inverter control device and power conversion device
A DC voltage value from a DC voltage detection section is input directly to a voltage correction section without passing through a compensator or a filter. Therefore, even when rapid voltage change occurs, such as short power interruptions, instantaneous voltage drop and return from instantaneous voltage drop, the voltage correction section can quickly perform the correction operation in response to the rapid voltage change. Since the amount of link resonance compensation is limited by the limitation section to a certain range, it is possible to prevent the amount of link resonance compensation from fluctuating excessively upon rapid voltage change. Since the amount of link resonance compensation which is limited by the limitation section to a certain range is input to one compensator that has an appropriate control band, among all control calculation sections, the response does not have to be unnecessarily fast, thus realizing a stable control. |
| US08736219B2 |
Industrial robot having redundant emergency brake circuit
The invention relates to an industrial robot having a robotic arm. The robotic arm has several axes (A1-A6) and at least one electric drive, which comprises an electric motor (7-12) and power electronics (16) actuating the electric motor (7-12) and is equipped to move the relevant axis (A1-A6). The industrial robot (1) is equipped to short-circuit the electric motor (7-12) in the event of emergency braking simultaneously by means of two independent electric current paths. |
| US08736212B2 |
System and method of automatic detection and prevention of motor runaway
A robotic catheter control system includes a plurality of electric motors. Diagnostic logic automatically detects motor runaway fault conditions based on the current motor position, the target motor position and a predetermined tolerance parameter. Fault conditions include overshoot, movement in the a non-prescribed direction, exceeding a prescribed maximum motor speed and exceeding a prescribed maximum motor acceleration. The diagnostic logic terminates operating power to the electric motor when a fault condition is detected for any one of the motor. An error message is generated to notify the operator of the fault. |
| US08736210B2 |
Apparatus and method for determining speed of an induction motor
Speed of a motor, generator or alternator, more particularly the speed of an alternating current (AC) induction motor is determined. Problems associated with previous devices are overcome by providing a speed monitoring device that is readily retrofitted to an existing motor. A test signal is superimposed onto an input voltage, which voltage in use is applied to at least one winding of the stator of a motor (the test signal is at a frequency substantially equal to the rotor frequency). The test signal frequency is varied so that it varies from a minimum frequency to a maximum frequency. A current monitor monitors a resultant current, in the at least one stator winding. and deriving from the resultant current is a signal indicative of the rotor frequency. |
| US08736209B2 |
Drive and control circuit for motor system and the method thereof
A drive and control circuit for motor system and the method thereof are disclosed. The motor system could be applied in a cooling device, wherein the motor system comprises a rotor, a coil and a bridge circuit. The drive and control circuit comprises a control unit, a state detecting circuit, a load determining circuit, and a startup setting circuit. The startup setting circuit makes the motor run with the maximum torque, thus to make the motor system start up easily and quickly. The load determining circuit detects the load of the motor system, thus to generate a load determining signal to determine the speed of the motor system. The control unit could be realized with few components so as to save the costs. |
| US08736208B2 |
Motor control device
When one of six FETs has short-circuit faulted, a controllable region identification unit stops driving of an electric motor, and then performs processes for determining whether a short-circuit fault has occurred, and when a short-circuit fault has occurred, for identifying the position of the FET that has short-circuit faulted based on phase voltages (induced voltages) VU, VV, and VW of phases. When the position of the FET that has short-circuit faulted is identified, the controllable region identification unit performs a controllable region identification process. In detail, the controllable region identification unit identifies a “possible region,” an “indeterminate region,” and a “impossible region” based on phase voltages VU, VV, and VW of the phases. |
| US08736205B2 |
Switching device and method for terminating a braking process of a three-phase AC motor
A switching device and method are disclosed for terminating a braking process of a three-phase AC motor. The braking process of the AC motor is performed by way of a first and second thyristor. During the braking process of the AC motor, in a first step the first thyristor is actuated in such a way that a braking current is fed to the AC motor, and therefore a torque which brakes the AC motor is produced. In a second step the second thyristor is actuated in such a way that, when the first thyristor is quenched, the braking current is taken on by the second thyristor and the braking torque is maintained. The two steps are repeated during the braking process; wherein the second step is suppressed during the braking process after a last actuation of the first thyristor. |
| US08736204B2 |
Transfer apparatus for electric power
Apparatus for transferring power between an electricity network (UP) operating on alternating-current electricity and a multiphase electric machine (M2, M3), which apparatus comprises low-voltage power cells (CS, C11 . . . CN6) operating on a cascade principle, which power cells comprise a single-phase output connector (OUT), and at least one transformer (TA, T1 . . . TN), comprising for each power cell connected to it a single-phase or multiphase winding dedicated to the specific power cell, which transformer comprises at least one additional winding (WA, WB1 . . . WBN) connected to the same magnetic circuit as the other windings for the purpose of at least one auxiliary circuit, which can be connected to the aforementioned additional winding. |
| US08736202B2 |
Drive control circuit for linear vibration motor
In a drive control circuit of a linear vibration motor, the drive signal generating unit generates a drive signal whose phase is opposite to that of the drive signal generated during the motor running, after the running of the linear vibration motor has terminated; this drive signal of opposite phase includes a high impedance period during which the driver unit is controlled to a high impedance state. An induced voltage detector detects an induced voltage occurring in the coil. A comparator has a function as a hysteresis comparator in which the output level does not vary in a predetermined dead band, and the comparator outputs a high-level signal or a low-level signal during the high impedance period. When an in-phase signal is consecutively outputted from the comparator during the consecutive high-impedance periods, the drive signal generating unit determines that the linear vibration motor has come to a stop. |
| US08736200B2 |
Power tuning an electric system
A method of power tuning an electric system, the electric system including an electric machine and a control system for driving the electric machine in response to control values stored in a power map. The method includes loading the control system with a first power map, driving the electric machine with the control system, measuring a power of the electric system, and loading the control system with a second power map in the event that the measured power lies outside a predetermined range. |
| US08736199B2 |
Temperature stabilized microwave electron gun
The temperature rise due to the backstreaming electrons is canceled by an equal and opposite fall in temperature at the surface of the cathode due to the conduction of heat deposited at the surface immediately prior to the microwave pulse by a pulsed laser focused to uniformly illuminate the cathode surface. Variations in temperature across the surface of the cathode attributable to the non-uniform spatial distribution of the backstreaming electrons may be compensated using a second laser pulse fired during the RF pulse to maintain constant thermal power input across the surface of the cathode during the RF pulse. This second pulse can also be used to compensate for the time-dependent rate of decay of temperature due to conduction of the heat deposited by the first laser into the body of the cathode. |
| US08736197B2 |
Methods and apparatus for controlling respective load currents of multiple series-connected loads
A lighting apparatus (100) includes one or more first LEDs (202) for generating a first spectrum of radiation (503), and one or more second LEDs (204) for generating a second different spectrum radiation (505). The first and second LEDs are electrically connected in series between a first node (516A) and a second node (516B), between which a series current (550) flows with the application of an operating voltage (516) across the nodes. A controllable current path (518) is connected in parallel with one or both of the first and second LEDs so as to at least partially divert the series current, such that a first current (552) through the first LED(s) and a second current (554) through the second LED(s) are different. Such current diversion techniques may be employed to compensate for shifts in color or color temperature of generated light during thermal transients, due to different temperature-dependent current-to-flux relationships for different types of LEDs. |
| US08736195B2 |
Current control for SIMO converters
A system includes a single-inductor-multiple-out (SIMO) converter having storage circuitry in communication with a plurality of output channels, and a controller that controls and measures current flow through the SIMO converter. A signal generator may output switching signals to store current in the storage circuitry and discharge the stored current into the plurality of output channels. The discharged current may be measured and compared to a desired current draw through the output channels over a sample period. A compensator may determine whether to change one or more timing parameters used to control the flow of current through the SIMO converter. |
| US08736193B2 |
Threshold-based zero-crossing detection in an electrical dimmer
Threshold-based zero-crossing detection is provided. A power phase threshold detector detects when absolute value of a voltage level of the electrical power rises above a non-zero voltage threshold and outputs a zero-crossing signal to a controller to indicate occurrence of the zero-crossing. Delaying the zero-crossing signal to the point when the absolute value of the voltage level of the electrical power rises above the non-zero voltage threshold ensures completion of the zero-crossing of the power phase prior to signaling the controller. The controller provides signals to a switching circuit for controlling switching of electrical power to a load based on the zero-crossing indications. |
| US08736192B2 |
Apparatus and method for detecting open-circuited light emitting diode channels
An apparatus for driving an LED device having a plurality of LED channels is disclosed. Each LED channel has a plurality of LEDs connected in series. A power converter converts an input voltage into an output voltage and outputs the output voltage to an output terminal that is connected to first terminals of the plurality of LED channels. A plurality of current controllers are connected to second terminals of the plurality of LED channels, respectively. Each current controller controls a current of a corresponding LED channel. A detection controller determines a detection time based on voltages of the second terminals of the plurality of LED channels. A state detector detects the open-circuited states of the plurality of LED channels based on voltages of the second terminals of the plurality of LED channels at the detection time. |
| US08736186B2 |
Solid state lighting switches and fixtures providing selectively linked dimming and color control and methods of operating
A solid state lighting switch can include a first input control that can be configured to adjust a dimming indication or color indication for a solid state lighting fixture that is configured for coupling to the solid state lighting switch. A selective linking mechanism can be configured to activate a linked mode of operation of the switch to link the dimming indication to the color indication or to activate an unlinked mode of operation of the switch to unlink the dimming indication from the color indication. |
| US08736175B2 |
Current control in plasma processing systems
A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current. |
| US08736172B2 |
Vehicle lighting arrangement
A vehicle lighting arrangement comprising a luminous device, a luminous device driver circuit, a sensor and a nonvolatile memory, wherein the luminous device driver circuit is designed to drive the luminous device during luminous device driving such that the luminous device emits light, wherein the sensor is designed to detect a sensor state of the luminous device, and wherein the vehicle lighting arrangement is designed to read in a sensor state of the luminous device detected by the sensor and to write the read-in sensor state to the nonvolatile memory. |
| US08736170B1 |
Stable cold field emission electron source
A cold field emission (CFE) electron source for a focused electron beam system such as a transmission electron microscope (TEM), scanning transmission electron microscope (STEM), or scanning electron microscope (SEM) is disclosed. The source employs an emitter enclosure electrode behind the CFE tip which, in conjunction with the extractor electrode, defines a closed volume that can be thoroughly cleaned by electron impact desorption (EID) and radiative heating from a heated filament located between the emitter enclosure electrode and extractor electrode. The extractor electrode may have a counterbore which restricts backscattered electrons generated at the extractor from reaching portions of the source and gun which have not been cleaned by EID. Pre-cleaning of the emitter enclosure electrode and extractor electrode prior to cold field emission substantially improves both source emission stability and frequency noise characteristics, enabling source operation over time intervals adequate for application to TEMs, STEMs, and SEMs. |
| US08736160B2 |
Light-emitting apparatus and method for manufacturing same
A light-emitting apparatus including: a substrate; an LED chip mounted on a first surface of the substrate; a fluorescent material-containing layer containing a first fluorescent material, which fluorescent material-containing layer is provided above the first surface of the substrate so as to cover the LED chip; and a color-adjusting fluorescent layer that contains a second fluorescent material, which color-adjusting fluorescent material layer is formed in a layer provided on an outer side of the fluorescent material-containing layer in an emission direction, the color-adjusting fluorescent layer being formed in dots. Thus, the present invention provides a light-emitting apparatus and a method for manufacturing the same, each making it possible to carry out fine color adjustment so as to prevent a subtle color shift that occurs due to a factor such as a difference in concentration of a fluorescent material or the like. |
| US08736158B1 |
Organic electroluminescent display device and method of fabricating the same
A top emission type organic electroluminescent display device includes a first substrate including a pixel region, a switching thin film transistor and a driving thin film transistor in the pixel region on the first substrate, a passivation layer covering the switching thin film transistor and the driving thin film transistor and exposing a drain electrode of the driving thin film transistor, a first electrode on the passivation layer and connected to the drain electrode of the driving thin film transistor, a buffer pattern in a border of the pixel region and overlapping an edge of the first electrode, a first spacer on the buffer pattern along a first direction, the first spacer having a first thickness and a dam shape, a second spacer on the buffer pattern along a second direction, the second spacer having a second thickness and a dam shape, a third spacer on the buffer pattern at a crossing portion of the first and second spacers, the third spacer having a third thickness and a columnar shape, wherein the third thickness is thicker than the first thickness or the second thickness, an organic emission layer on the first electrode between adjacent buffer patterns, a second electrode on the organic emission layer and the first, second and third spacers, a second substrate facing the first substrate, and a seal pattern between peripheries of the first and second substrates. |
| US08736156B2 |
Organic light emitting diode display
An organic light emitting diode display includes a first substrate, the first substrate including at least one organic light emitting diode and a pixel defining layer having an opening portion defining a light emitting region of the organic light emitting diode, protruding portions increasingly protruding on the pixel defining layer as the protruding portions approach the edges of the first substrate, a second substrate disposed opposite to the first substrate, a sealing member bonding the first substrate to the second substrate, and filler in a space between the first substrate and the second substrate. |
| US08736155B2 |
Organic light-emitting display apparatus
An organic light-emitting display apparatus including first and second edge sub-pixel lines disposed at opposing side edges of the apparatus and center sub-pixel lines disposed therebetween, each for emitting a single color of light. An external emission width of the first edge sub-pixel line is less than an external emission width of the center sub-pixel lines that emit the same color. An external emission width of the second edge sub-pixel line is less than the width of the center sub-pixel lines that emit the same color. |
| US08736154B2 |
Spark plug
Problem is to enhance the welding strength when a projecting shape section is resistance-welded to a around electrode. A ground electrode 30 includes a ground electrode base material 35 and a projecting shape section 36. The projecting shape section 36 is connected by resistance welding to an opposite surface 32 of the ground electrode 30 so as to be opposite and project towards the leading end of a center electrode 20. The ground electrode base material 35 and the projecting shape section 36 are formed from a material that is composed of the same metal (for example, nickel) as a main component and have a relation of formulas (1) and (2) described below. In formula (1), the specific resistance of the ground electrode base material 35 is R (μΩcm) and the specific resistance of the projecting shape section 36 is S (μΩcm). The specific resistance R>the specific resistance S . . . (formula 1), the specific resistance R−specific resistance S≧20 . . . (formula 2). Accordingly, fusion of the ground electrode base material 35 that has a larger volume than that of the projecting shape section 36 can be expedited and the welding strength can be enhanced. |
| US08736151B2 |
Electric generator
Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material. |
| US08736150B2 |
Methods and apparatus for mechanical resonating structures
Mechanical resonating structures and related methods are described. The mechanical resonating structures may provide improved efficiency over conventional resonating structures. Some of the structures have lengths and widths and are designed to vibrate in a direction approximately parallel to either the length or width. They may have boundaries bounding the length and width dimensions, which may substantially align with nodes or anti-nodes of vibration. |
| US08736147B1 |
Sound and vibration harnessing energy generator
One embodiment of a piezoelectric generator which uses fibrous piezoelectric sensors to harness energy from sound and vibrations. These sensors will be fitted into a multilayered base consisting of a sound reflecting layer and alternating layers of conductive and nonconductive materials. The sound reflecting layer will serve to increase energy generation efficiency when multiple sheets of the apparatus is used, and the alternating layers of conductive and nonconductive materials will collect electricity generated from the piezoelectric sensors. Once collected, this electricity will then be used to power appliances or be stored in a battery for future use. Other embodiments are described and shown. |
| US08736142B2 |
Polarity switching circuit
A polarity switching circuit includes: a first current-limiting resistor and a second current-limiting resistor connected to a DC high voltage; a first transistor switch, a second transistor switch, a fourth transistor switch, and a fifth transistor switch respectively controlled by a first PWM signal and a second PWM signal; a third transistor and a sixth transistor switch whose control terminals are respectively connected to the first transistor switch and the fourth transistor switch; a first filter connected to the second transistor switch and the third transistor switch and a contact of a piezoelectric actuator; and a second filter connected to the fifth transistor switch and the sixth transistor switch and another contact of the piezoelectric actuator. When the first and the second PWM signal are switching between a high level and a low level, output AC voltages with smoothed AC waveforms are supplied to the contacts of the piezoelectric actuator. |
| US08736140B2 |
Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module device
A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer (IDT) that includes electrode fingers exciting a surface acoustic wave on the piezoelectric substrate, a first region at a center of the IDT, and a second region and a third region at opposite sides of the IDT. In the IDT, a line occupation rate at which an electromechanical coupling coefficient becomes a maximum is different from the line occupation rate at which reflection of the surface acoustic wave becomes a maximum. |
| US08736134B2 |
Alignment of segmented stators for electric machines
A stator segment for a segmented stator of an electric machine includes insulative material configured for overlapping with insulative material of an adjacent stator segment to provide continuous insulation along a joint between the adjacent stator segments. Additionally, or alternatively, the stator segment can include one or more alignment tabs configured to engage a surface of an adjacent stator segment to inhibit relative axial movement between adjacent stator segments. |
| US08736131B2 |
Dynamoelectric machine with noise reduction
The present invention provides a dynamoelectric machine that can reduce 12f vibrational force and suppress generation of irritating electromagnetic noise in a vicinity of 2,000 Hz in an idling state. In the present invention, an armature winding includes first and second three-phase windings, the first three-phase winding is configured by delta-connecting respective phase windings, and the second three-phase winding is configured so as to be Y-connected to the first three-phase winding by connecting respective phase windings in series to respective output ends of the first three-phase winding. The first and second three-phase windings are each installed in the stator core such that respective phase currents have a phase difference from each other. In addition, angles between center lines of adjacent slot opening portions of the stator core central angles of adjacent slot opening portions of the stator have a nonuniform pitch, and a turn ratio between the first three-phase winding and the second three-phase winding is within a range of 1.25 to 2.25. |
| US08736118B2 |
Single-channel safety output
A safety switching device for fail-safely switching on and off an electrical load, and to a system comprising at least two safety switching devices which interact in a fail-safe manner via a single-channel. The safety switching device comprises a fail-safe control unit, a first and a second electronic switching element connected with a first and a second output terminal; and at least one input terminal for receiving a first switching signal that causes a switching of said switching elements. Said first and second switching elements each comprise an output which provides depending on the first switching signal an output signal having a first or second potential. A third output terminal connects said safety switching device to a second safety switching device, providing a clocked signal depending on the first switching signal and being monitored by said control unit for performing a cross fault detection. |
| US08736117B2 |
Server rack system
A server rack system includes a rack, a power transmission module, a power supply module, and operating units. The power transmission module configured at the rack includes first, second, and third conductive pillars. When the power supply module slidably configured in the rack is completely installed in the rack, the power supply module electrically connects the first, second, and third conductive pillars to receive high-voltage direct-current (DC) electric power through the first conductive pillar electrically connecting an external power supply. When the operating units slidably configured in the rack are completely installed in the rack, the operating units electrically connect the second and third conductive pillars. The completely installed operating units transmit signals indicating the complete installation to the power supply module, such that the power supply module converts the high-voltage DC electric power into low-voltage DC electric power and transmits the low-voltage DC electric power to the operating units. |
| US08736116B2 |
Information device
A compact information device in which a shortened unlatch time is enabled so such device can transition from a power cutoff mode to a power supply mode to resume supplying power to internal circuits as a result of a latch circuit unlatching a control signal. Embodiments of such a device, which may be a printer, includes a CPU, tactile switch, smoothing capacitor, switch circuit, a switch control signal generator including a latch circuit, and a potential difference detection circuit. The latch circuit and potential difference detection circuit operate with voltage Vin2. The CPU outputs a start latch signal VLT when the operating mode changes from the power supply mode to the power cutoff mode. When the tactile switch is turned off, the potential difference detection circuit outputs an unlatch signal VRST. When the unlatch signal VRST is input, the latch circuit unlatches the control signal. |
| US08736115B2 |
Buttons with modulated bias voltages
Electronic devices may use buttons to gather user input. Button status monitoring circuits may be provided that apply a time-varying bias voltage to each button. The time-varying bias voltage may be held at a fixed non-zero level when the state of the button is being monitored and may be held at a level of zero volts when the state of the button is immaterial and is not being monitored. The reduction of the bias voltage across the button when the button is not being monitored prevents undesired acceleration in dendritic growth when the electronic device is exposed to moisture. The bias voltage may be pulsed by using a control circuit. The control circuit may generate a series of square wave pulses that are applied across the terminals. |
| US08736114B2 |
Method and system for aligning conductors for capacitive wireless power transmission
A method of aligning a wall conductor with an organic light emitting diode (OLED) panel conductor is disclosed. A transmitter device having a capacitive conductor and a receiver device having a capacitive conductor in proximity to the capacitive conductor of the transmitter device. The capacitive conductors of the transmitter device and the receiver device are aligned using an alignment indicator, which indicates that at least one edge of the capacitive conductor of the receiver device is in alignment with the capacitive conductor of the transmitter to optimize a transfer of power between the capacitive conductors. |
| US08736110B2 |
Simplified multilevel DC converter circuit structure
A simplified multilevel DC converter circuit structure comprises a dual input DC power supply, a power control module and an AC side low-pass filter, wherein each of the dual input DC power supply supplies half of the rated DC voltage to the power control module, and the power control module is composed of six power switches, and different switching combinations of each power switch are controlled to convert a DC voltage to an output of an AC voltage, and two of the power switches of the power control module perform a low-frequency switching twice every cycle of the output voltage, and the withstand voltage is equal to the input voltage, and the remaining power switches perform the switching by a high frequency, and the withstand voltage is only half of the input voltage, such that a multilevel voltage can be outputted, and a low harmonic AC waveform can be outputted from the AC side low-pass filter. |
| US08736108B1 |
Photovoltaic system
A photovoltaic system described herein includes a first group of photovoltaic modules that comprises a first plurality of microsystem enabled photovoltaic modules. A second group of photovoltaic modules comprises a second plurality of microsystem enabled photovoltaic modules, wherein the first group of photovoltaic modules are electrically connected in parallel to the second group of photovoltaic modules. |
| US08736105B2 |
Printing press without paper during power failure and method of operating the printing press
An electrical voltage supply device for machines processing printing material includes at least one drive motor for the transport of printing material and at least one further electrical consumer. A control unit is provided which, when the supply voltage drops below a minimum acceptable supply voltage of the machine processing printing material, switches of electrical consumers which are not required for the transport of printing material and supplies the drive motor for the transport of printing material from energy stored in the moving masses of the machine processing printing material. |
| US08736097B1 |
Hydrokinetic generator system
A hydrokinetic generator apparatus that includes a liquid reservoir having an outlet port and an inlet port that is disposed over the outlet port; an outflow valve that is disposed at the outlet port of the liquid reservoir; at least one generator module coupled from the liquid reservoir and including at least one fill pipe for receiving liquid expelled from the liquid reservoir, and at least one outlet port; at least one surge generator disposed in the fill pipe; and an outflow valve at a base of the generator module. The outlet port of the generator module is coupled to the inlet port of the liquid reservoir. The apparatus further includes a battery pack; an electrical controller responsive to a voltage across the battery pack for controlling said valves; and an electrical charging hub responsive to the surge generator for re-charging the battery pack. |
| US08736096B2 |
Water flow electricity generating device
A water flow electricity generating device includes: an annular stator in which a coil is provided; a permanent magnet that causes a magnetic force to act on the coil; a rotor main body that is disposed on an inner circumferential side of a stator core to support the permanent magnet; a blade support unit that is provided on a front side of the rotor main body; a rotor that includes a rotating blade projecting radially outward from the blade support unit; and water-lubricated bearings that are provided in the stator while being opposed to the rotor main body, the water-lubricated bearings supporting loads in a thrust direction and a radial direction. The blade support unit is disposed on a front side of the rotor main body, and the rotor includes a float unit that is provided on the front side of the rotor main body. |
| US08736090B2 |
Protection arrangement of an electric power system
The inventive protection arrangement of an electric power system comprises a relay arrangement (12) for measuring current, voltage or both of an electric grid (15). The relay arrangement is adapted to detect over-current, under-voltage or both. The protection arrangement comprises also a speed/load controller (16) that is in connection with the relay arrangement (12). The speed/load controller is arranged to drive a prime mover (11) of a generator (10) set as a response for the said detection. The speed/load controller (16) is connectable with said prime mover (11). In more detail the controller (16) is arranged to drive power output of the prime mover (11) to a lower level when over-current, under-voltage or both is detected. |
| US08736088B2 |
Energy harvesting
The present application describes techniques for the harvesting of kinetic energy from the movement of people and/or vehicles. A motion converter is discussed which converts linear progression caused by traffic-related impulse forces, to be converted to rotational motion for driving the rotor of an electricity generator. An assembly for harvesting energy including the motion converter and a floor unit are also described. |
| US08736087B2 |
Methods and apparatus for control of biomechanical energy harvesting
An apparatus for harvesting energy from motion of a human or animal body segment and providing the energy to an electrical load is disclosed. The apparatus comprises a generator operatively coupled to the body segment such that particular movement of the body segment causes the generator to output a generator current and to oppose the particular movement of the body segment with a generator torque. An electrical load is coupled to receive the generator current. A control system is operatively connected between the generator and the electrical load and is configured to control the generator torque during the particular movement of the body segment. Corresponding methods are also disclosed. |
| US08736084B2 |
Structure and method for E-beam in-chip overlay mark
The present disclosure provides an integrated circuit structure that includes a semiconductor substrate having a first region and a second region having an area less than about 10 micron×10 micron; a first material layer over the semiconductor substrate and patterned to have a first circuit feature in the first region and a first mark in the second region; and a second material layer over the first material layer and patterned to have a second circuit feature in the first region and a second mark in the second region. The first mark includes first mark features oriented in a first direction, and second mark features oriented in a second direction perpendicular to the first direction. The second mark includes third mark features oriented in the first direction, and fourth mark features oriented in the second direction. |
| US08736083B2 |
Bonding inspection structure
A bonding inspection structure is provided. The bonding inspection structure includes at least a elastic bump located on a substrate. At least an opening is formed in the top portion of the elastic bump. An inspection area of the top portion of the elastic bump is larger than an area of the opening. |
| US08736081B2 |
Wafer level hermetic bond using metal alloy with keeper layer
Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate. At least one of the substrates may include a raised feature formed under at least one of the metal layers. The two metals may for an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. This alloy may have advantageous features in terms of density, mechanical, electrical or physical properties that may improve the hermeticity of the seal, for example. |
| US08736079B2 |
Pad structure, circuit carrier and integrated circuit chip
A pad structure is suitable for a circuit carrier or an integrated circuit chip. The pad structure includes an inner pad, a conductive via and an outer pad. The conductive via connects the inner pad. The outer pad connects the conductive via and further connects a conductive ball or a conductive bump. The outer diameter of the outer pad is greater than the outer diameter of the inner pad. |
| US08736076B2 |
Multi-chip stacking of integrated circuit devices using partial device overlap
One aspect provides an integrated circuit (IC) packaging assembly that comprises a substrate having conductive traces located thereon, wherein the signal traces are located in an IC device region and the power traces are located in a wafer level fan out (WLFO) region located lateral the IC device region. This embodiment further comprises a first IC device located on a first side of the substrate within the IC device region and that contacts the signal traces in the IC device region. A second IC device is located on a second side of the substrate opposite the first side and overlaps the IC device region and the WLFO region. The second IC device contacts a first portion of the signal traces in the IC device region and contacts a first portion of the power traces in the WLFO region. |
| US08736072B2 |
Semiconductor device and method for making same
A semiconductor circuit pattern includes an angled conductive pattern having a line portion and a pad portion at an end of the line portion extending normal to the line portion on a first side of the line portion. The pad portion has a width greater than a width of the line portion. A spacing has a first portion adjacent the first side of the pad portion, and a second portion adjacent a second side of the pad portion opposite the first side. The first portion of the spacing has a width greater than the width of the second portion of the spacing. |
| US08736071B2 |
Semiconductor device with vias on a bridge connecting two buses
A semiconductor device comprises conductive buses and conductive bridges. A respective conductive bridge is conductively coupled to at least two portions of at least one of the conductive buses. At least N plus one (N+1) vias are coupled between every one of the conductive bridges and a respective feature in an integrated circuit when: (1) a width of the respective conductive bridge is less than a width of each of the at least two portions of the at least one of the conductive buses to which the respective conductive bridge is coupled, and (2) a distance along the respective conductive bridge and at least one of the vias is less than a critical distance. N is a number of conductive couplings between the respective one of the conductive bridges and the at least one of the conductive buses. |
| US08736070B2 |
Semiconductor component comprising copper metallizations
A semiconductor component having improved thermomechanical durability has in a semiconductor substrate at least one cell comprising a first main electrode zone, a second main electrode zone and a control electrode zone lying in between. For making contact with the main electrode zone, at least one metallization layer composed of copper or a copper alloy is provided which is connected to at least one bonding electrode which likewise comprises copper or a copper alloy. |
| US08736069B2 |
Multi-level vertical plug formation with stop layers of increasing thicknesses
A method is provided for use with an IC device including a stack including a plurality of conductive layers interleaved with a plurality of dielectric layers, for forming interlayer connectors extending from a connector surface to respective conductive layers. The method forms landing areas on the plurality of conductive layers in the stack. The landing areas are without overlying conductive layers in the stack. The method forms etch stop layers over corresponding landing areas. The etch stop layers have thicknesses that correlate with depths of the corresponding landing areas. The method fills over the landing areas and the etch stop layers with a dielectric fill material. Using a patterned etching process, the method forms a plurality of vias extending through the dielectric fill material and the etch stop layers to the landing areas in the plurality of conductive layers. |
| US08736066B2 |
Stacked microelectronic assemby with TSVS formed in stages and carrier above chip
A microelectronic assembly is provided which includes a first element consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface facing and attached to a major surface of a microelectronic element at which a plurality of conductive pads are exposed, the microelectronic element having active semiconductor devices therein. A first opening extends from an exposed surface of the first element towards the surface attached to the microelectronic element, and a second opening extends from the first opening to a first one of the conductive pads, wherein where the first and second openings meet, interior surfaces of the first and second openings extend at different angles relative to the major surface of the microelectronic element. A conductive element extends within the first and second openings and contacts the at least one conductive pad. |
| US08736065B2 |
Multi-chip package having a substrate with a plurality of vertically embedded die and a process of forming the same
An apparatus includes a substrate having a land side having a plurality of contact pads and a die side opposite the land side. The apparatus includes a first die and a second die wherein the first die and second die are embedded within the substrate such that the second die is located between the first die and the land side of the substrate. |
| US08736064B2 |
Structure and method of making interconnect element having metal traces embedded in surface of dielectric
An interconnect element is provided. A monolithic dielectric element has a first exposed major surface, a plurality of first recesses extending inwardly from the first major surface, and a second exposed major surface remote from the first major surface, a plurality of second recesses extending inwardly from the second major surface. A plurality of first metal interconnect patterns are embedded in the plurality of first recesses and extend in one or more directions along the first major surface. A plurality of second metal interconnect patterns are embedded in the plurality of second recesses and extend in one or more directions along the second major surface. A plurality of non-hollow metal posts extend through the dielectric element between at least some of the plurality of first metal interconnect patterns and at least some of the plurality of second metal interconnect patterns. |
| US08736057B2 |
Substrate and manufacturing method therefor
A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating. |
| US08736056B2 |
Device for reducing contact resistance of a metal
A structure for an integrated circuit with reduced contact resistance is disclosed. The structure includes a substrate, a cap layer deposited on the substrate, a dielectric layer deposited on the cap layer, and a trench embedded in the dielectric layer. The trench includes an atomic layer deposition (ALD) TaN or a chemical vapor deposition (CVD) TaN deposited on a side wall of the trench, a physical vapor deposition (PVD) Ta or a combination of the PVD Ta and a PVD TaN deposited on the ALD TaN or CVD TaN, and a Cu deposited on the PVD Ta or the combination of the PVD Ta and the PVD TaN deposited on the ALD TaN or the CVD TaN. The structure further includes a via integrated into the trench at bottom of the filled trench. |
| US08736055B2 |
Methods and layers for metallization
One aspect of the present invention is a method of making an electronic device. According to one embodiment, the method comprises depositing a cap layer containing at least one dopant onto a gapfill metal and annealing so that the at least one dopant migrates to grain boundaries and/or interfaces of the gapfill metal. Another aspect of the present invention is an electronic device. |
| US08736052B2 |
Semiconductor device including diffusion soldered layer on sintered silver layer
A semiconductor device includes a substrate and a first sintered silver layer on the substrate. The semiconductor device includes a first semiconductor chip and a first diffusion soldered layer coupling the first semiconductor chip to the first sintered silver layer. |
| US08736050B2 |
Front side copper post joint structure for temporary bond in TSV application
An integrated circuit structure includes a semiconductor substrate; a conductive via (TSV) passing through the semiconductor substrate; and a copper-containing post overlying the semiconductor substrate and electrically connected to the conductive via. |
| US08736049B1 |
Micro-plasma generation using micro-springs
Micro-plasma is generated at the tip of a micro-spring by applying a positive voltage to the spring's anchor portion and a negative voltage to an electrode maintained a fixed gap distance from the spring's tip portion. By generating a sufficiently large voltage potential (i.e., as determined by Peek's Law), current crowding at the tip portion of the micro-spring creates an electrical field that sufficiently ionizes neutral molecules in a portion of the air-filled region surrounding the tip portion to generate a micro-plasma event. Ionic wind air currents are generated by producing multiple micro-plasma events using micro-springs disposed in a pattern to produce a pressure differential that causes air movement over the micro-springs. Ionic wind cooling is produced by generating such ionic wind air currents, for example, in the gap region between an IC die and a base substrate disposed in a flip-chip arrangement. |
| US08736045B1 |
Integrated bondline spacers for wafer level packaged circuit devices
A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer. |
| US08736041B2 |
Power converter
A power converter includes a plurality of semiconductor modules that have main body sections, each of the main body sections has a semiconductor element therein, and power terminals projected from the main body sections, and a plurality of bus bars that connect the power terminals of the semiconductor modules. At least one of the plurality of the bus bars are connecting bus bars which have a plurality of terminal connecting sections that connect the power terminals of the plurality of different semiconductor modules, and connecting sections that connect the terminal connecting sections. The entirety of each of the connecting bus bars is formed integrally. The terminal connecting sections and the connecting section of every connecting bus bar are provided alternately in the connecting bus bar, and disposed in substantially the same position in a projecting direction of the power terminals. |
| US08736039B2 |
Stacked structures and methods of forming stacked structures
A stacked structure includes a first die bonded over a second die. The first die has a first die area defined over a first surface. At least one first protective structure is formed over the first surface, around the first die area. At least one side of the first protective structure has at least one first extrusion part extending across a first scribe line around the protective structure. The second die has a second die area defined over a second surface. At least one second protective structure is formed over the second surface, around the second die area. At least one side of the second protective structure has at least one second extrusion part extending across a second scribe line around the protective structure, wherein the first extrusion part is connected with the second extrusion part. |
| US08736037B2 |
Leadless integrated circuit package having standoff contacts and die attach pad
A leadless integrated circuit (IC) package comprising an IC chip mounted on a die attach pad and a plurality of electrical contacts electrically connected to the IC chip. The IC chip, the electrical contacts, and the die attach pad are all covered with a molding material, with portions of the electrical contacts and die attach pad protruding from a bottom surface of the molding material. |
| US08736034B2 |
Lead-frame circuit package
A lead-frame circuit package comprises a die and a substrate located thereon to route radio frequency signals to/from the die. The package preferably comprises an exposed pad on the die to receive a power amplifier device wherein the substrate is used to provide high-Q elements such as RF chokes on signal paths to/from the power amplifier device.In this manner, the design benefits from the power capabilities and improved grounding of a lead-frame conductor, whilst also achieving the routeing capabilities and small scale advantages provided by a multi-layer printed circuit substrate. |
| US08736033B1 |
Embedded electronic device package structure
An embedded-electronic-device package includes a core layer, an electronic device, a first dielectric layer, a second dielectric layer, a shielding-metal layer and conductive vias. The core layer includes a first surface, a second surface opposite to the second surface and a cavity penetrating the core layer. The electronic device is disposed in the cavity including an inner surface. The first dielectric layer disposed on the first surface is filled in part of the cavity and covers part of the electronic device. The second dielectric layer disposed on the second surface is filled in rest of the cavity, covers rest of the electronic device. The first and second dielectric layers cover the electronic device. The shielding-metal layer covers the inner surface. The conductive vias are respectively disposed in the first and second dielectric layers and extended respectively from outer surfaces of the first and second dielectric layers to the shielding-metal layer. |
| US08736029B2 |
Semiconductor apparatus
A semiconductor apparatus includes a semiconductor substrate. The semiconductor substrate includes an active region in which a semiconductor device is formed, and a peripheral region which is located between the active region and an edge surface of the semiconductor substrate. A first insulating layer including conductive particles is formed above at least a part of the peripheral region. By constructing the semiconductor apparatus in this manner, generation of a high electric field in the peripheral region can be suppressed. Therefore, voltage endurance characteristics of the semiconductor apparatus can be improved. |
| US08736025B2 |
III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity
An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with AlxGa1-xN, the growth temperature of which is high and which has a high Al composition, as well as a III-nitride semiconductor growth substrate for fabricating these and a method for efficiently fabricating these. The invention is characterized by being equipped with: a crystal growth substrate, at least the surface portion of which substrate includes a III-nitride semiconductor containing Al; and a single metallic layer formed on the surface portion, the single metallic layer being made from Zr or Hf. |
| US08736022B2 |
Semiconductor device with a diode-type ESD protection circuit
A semiconductor device has a semiconductor chip, an internal circuit region arranged on an inner side of the semiconductor chip, and a bonding pad region arranged adjacently to the internal circuit region. A diode-type ESD protection circuit is formed of a junction between a first conductivity type diffusion layer for fixing a substrate potential of the semiconductor chip and a pair of second conductivity type diffusion layers arranged on an inner side of the first conductivity type diffusion layer. The first conductivity type diffusion layer is arranged on an entire peripheral region or a part of the peripheral region of the semiconductor chip with the peripheral region being outside of the internal circuit region and the bonding pad region. One of the pair of second conductivity type diffusion layers comprising a diffusion layer for breakdown adjustment at a junction portion with the first conductivity type diffusion layer. |
| US08736021B2 |
Semiconductor device comprising a metal system including a separate inductor metal layer
In an integrated circuit an inductor metal layer is provided separately to the top metal layer, which includes the power and signal routing metal lines. Consequently, high performance inductors can be provided, for instance by using a moderately high metal thickness substantially without requiring significant modifications of the remaining metallization system. |
| US08736020B2 |
Electronic anti-fuse
An electronic anti-fuse structure, the structure including an Mx level comprising a first Mx metal and a second Mx metal, a dielectric layer located above the Mx level, an Mx+1 level located above the dielectric layer; and a metallic element in the dielectric layer and positioned between the first Mx metal and the second Mx metal, wherein the metallic element is insulated from both the first Mx metal and the second Mx metal. |
| US08736019B2 |
Semiconductor devices with sealed, unlined trenches and methods of forming same
A semiconductor device includes unlined and sealed trenches and methods for forming the unlined and sealed trenches. More particularly, a superjunction semiconductor device includes unlined, and sealed trenches. The trench has sidewalls formed of the semiconductor material. The trench is sealed with a sealing material such that the trench is air-tight. First and second regions are separated by the trench. The first region may include a superjunction Schottky diode or MOSFET. In an alternative embodiment, a plurality of regions are separated by a plurality of unlined and sealed trenches. |
| US08736017B2 |
Semiconductor device and method for fabricating the same
A semiconductor device includes a substrate including a trench, a buried gate filling a part of the trench, an inter-layer dielectric layer formed on the buried gate to gap-fill the rest of the trench, and a protection layer covering substantially an entire surface of the substrate including the inter-layer dielectric layer. |
| US08736014B2 |
High mechanical strength additives for porous ultra low-k material
A semiconductor device and method for making such that provides improved mechanical strength is disclosed. The semiconductor device comprises a semiconductor substrate; an adhesion layer disposed over the semiconductor substrate; and a porous low-k film disposed over the semiconductor substrate, wherein the porous low-k film comprises a porogen and a composite bonding structure including at least one Si—O—Si bonding group and at least one bridging organic functional group. |
| US08736013B2 |
Schottky diode with opposite-polarity schottky diode field guard ring
In one general aspect, an apparatus includes a metal or metal silicide contact layer disposed on an n-well region of a semiconductor substrate to form a primary Schottky diode. The apparatus includes a p-well guard ring region of the semiconductor substrate abutting the primary Schottky diode. The metal silicide contact layer has a perimeter portion extending over the p-well guard ring region of the semiconductor substrate and the p-well guard ring region has a doping level establishing a work function difference relative to the perimeter portion of the metal silicide contact layer to form a guard ring Schottky diode. The guard ring Schottky diode is in series with a p-n junction interface of the p-well region and the n-well region and the guard ring Schottky diode has a polarity opposite to that of the primary Schottky diode. |
| US08736006B1 |
Backside structure for a BSI image sensor device
Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and so-fabricated image sensor, in which undesired neutralization of charges in BARC layers caused by opposite charges in metal shield grounds is prevented to reduce dark current and enhance device performance. The image sensor comprises a substrate having a plurality of radiation sensors formed adjacent its front surface, a first insulation layer formed over the back surface of the substrate, a BARC layer formed over the first insulation layer, a metal grid disposed over the BARC layer, one or more metal grounds extending from the metal ground into the substrate for grounding purpose, and a sidewall insulating layer disposed between the sidewall of each metal ground and the surrounding BARC layer. The sidewall insulating layer electrically insulates the metal grounds from the surrounding BARC layer. |
| US08736005B2 |
Photoelectric conversion device and imaging system
In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region. |
| US08736001B2 |
Finger sensor including encapsulating layer over sensing area and related methods
A fingerprint sensor may include a substrate, and a finger sensing IC on the substrate and including a finger sensing area on an upper surface thereof for sensing an adjacent finger. The fingerprint sensor may include an encapsulating material on the finger sensing IC and covering the finger sensing area, and a bezel adjacent the finger sensing area and on an uppermost surface of the encapsulating layer. |
| US08735995B2 |
Cross-coupled transistor circuit defined on three gate electrode tracks with diffusion regions of common node on opposing sides of same gate electrode track
A first gate level feature forms gate electrodes of a first transistor of a first transistor type and a first transistor of a second transistor type. A second gate level feature forms a gate electrode of a second transistor of the first transistor type. A third gate level feature forms a gate electrode of a second transistor of the second transistor type. The gate electrodes of the second transistors of the first and second transistor types are electrically connected to each other. The gate electrodes of the second transistors of the first and second transistor types are positioned on opposite sides of a gate electrode track along which the gate electrodes of the first transistors of the first and second transistor types are positioned. |
| US08735993B2 |
FinFET body contact and method of making same
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate. |
| US08735989B2 |
Semiconductor device that includes main element having insulated gate bipolar transistor and sense element having resistor and insulated gate bipolar transistor
According to one embodiment, a semiconductor device includes a main element and a sense element. The main element is connected between a collector terminal and an emitter terminal. The main element has an insulated gate bipolar transistor structure. The sense element is connected in parallel with the main element via a sense resistor between the collector terminal and the emitter terminal. The sense element has an insulated gate bipolar transistor structure with a feedback capacitance larger than a feedback capacitance of the main element. |
| US08735985B2 |
Doped graphene electronic materials
A graphene substrate is doped with one or more functional groups to form an electronic device. |
| US08735984B2 |
FinFET with novel body contact for multiple Vt applications
FinFET devices are formed with body contact structures enabling the fabrication of such devices having different gate threshold voltages (Vt). A body contact layer is formed to contact the gate electrode (contact) enabling a forward body bias and a reduction in Vt. Two example methods of fabrication (and resulting structures) are provided. In one method, the gate electrode (silicon-based) and body contact layer (silicon) are connected by growing epitaxy which merges the two structures forming electrical contact. In another method, a via is formed that intersects with the gate electrode (suitable conductive material) and body contact layer and is filled with conductive material to electrically connect the two structures. As a result, various FinFETs with different Vt can be fabricated for different applications. |
| US08735978B2 |
Semiconductor devices having reduced gate-drain capacitance
Embodiments of a semiconductor device include a semiconductor substrate having a first surface and a second surface opposed to the first surface, a trench formed in the semiconductor substrate and extending from the first surface partially through the semiconductor substrate, a gate electrode material deposited in the trench, and a void cavity in the semiconductor substrate between the gate electrode material and the second surface. A portion of the semiconductor substrate is located between the void cavity and the second surface. |
| US08735953B2 |
Light reflecting CMOS image sensor
An image sensor comprising at least: CMOS-type photodiodes and transistors produced in a semiconductor layer having a thickness of between approximately 1 μm and 1.5 μm, a dielectric layer in which electrical interconnect layers are made, which are electrically connected to one another and/or to the CMOS photodiodes and/or transistors, said dielectric layer being arranged against a first face of the semiconductor layer opposite a second face of the semiconductor layer through which the light received by the sensor from the exterior is intended to enter, light-reflecting means arranged in the dielectric layer, opposite the photodiodes, and capable of reflecting at least a portion of the light received by the sensor towards the photodiodes. |
| US08735947B1 |
Non-volatile graphene nanomechanical switch
Non-volatile switches and methods for making the same include a gate material formed in a recess of a substrate; a flexible conductive element disposed above the gate material, separated from the gate material by a gap, where the flexible conductive element is supported on at least two points across the gap, and where a voltage above a gate threshold voltage causes a deformation in the flexible conductive element such that the flexible conductive element comes into contact with a drain in the substrate, thereby closing a circuit between the drain and a source terminal. The gap separating the flexible conductive element and the gate material is sized to create a negative threshold voltage at the gate material for opening the circuit. |
| US08735944B2 |
Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with serially connected transistors
A semiconductor device includes a cross-coupled transistor configuration formed by first and second PMOS transistors defined over first and second p-type diffusion regions, and by first and second NMOS transistors defined over first and second n-type diffusion regions, with each diffusion region electrically connected to a common node. Gate electrodes of the PMOS and NMOS transistors are formed by conductive features that are each defined within any one gate level channel. At least a portion of the first p-type diffusion region and at least a portion of the second p-type diffusion region are formed over a first common line of extent that extends perpendicular to the first parallel direction. Also, at least a portion of the first n-type diffusion region and at least a portion of the second n-type diffusion region are formed over a second common line of extent that extends perpendicular to the first parallel direction. |
| US08735943B2 |
Semiconductor device with recess having inclined sidewall and method for manufacturing the same
A semiconductor device includes a semiconductor layer, an insulating film, a gate electrode, a drain electrode, and a source electrode. The semiconductor layer includes an active layer and is formed on a semi-insulating semiconductor substrate, and a tapered recess area having an inclined sidewall is formed on a surface of the semiconductor layer. The insulating film is formed on the semiconductor layer and has a through hole for exposing the recess area. The through hole has a tapered sidewall which is inclined at an angle smaller than the sidewall of the recess area. The gate electrode is formed so as to fill the recess area and the through hole. The drain electrode and the source electrode are formed at positions on opposite sides of the recess area on the semiconductor layer. |
| US08735942B2 |
Compound semiconductor device and manufacturing method of the same
An i-GaN layer (electron transit layer), an n-GaN layer (compound semiconductor layer) formed over the i-GaN layer (electron transit layer), and a source electrode, a drain electrode and a gate electrode formed over the n-GaN layer (compound semiconductor layer) are provided. A recess portion is formed inside an area between the source electrode and the drain electrode of the n-GaN layer (compound semiconductor layer) and at a portion separating from the gate electrode. |
| US08735941B2 |
Nitride based semiconductor device and method for manufacturing the same
Disclosed herein is a nitride based semiconductor device including: a base substrate; an epitaxial growth layer disposed on the base substrate and generating a 2-dimensional electron gas in an inner portion thereof; and an electrode structure disposed on the epitaxial growth layer, wherein the electrode structure includes: a gate electrode; a source electrode disposed at one side of the gate electrode; and a drain electrode disposed at the other side of the gate electrode and having an extension part extended to the inner portion of the epitaxial growth layer to contact the 2-dimensional electron gas. |
| US08735940B2 |
Semiconductor device and method for manufacturing the same
There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove. |
| US08735936B2 |
Organic light emitting diode display
An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes an organic light emitting element formed over a substrate and an encapsulation portion covering the organic light emitting element. Further, the encapsulation portion may include at least one organic layer and at least one inorganic layer, wherein ends of the inorganic layer and the organic layer directly contact the substrate, and wherein the organic layer is thicker than the inorganic layer. |
| US08735934B2 |
Semiconductor light-emitting apparatus and method of fabricating the same
A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode. |
| US08735932B2 |
Light-emitting device including a connection layer formed on a side surface thereof
An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced. |
| US08735926B2 |
Semiconductor light emitting device and manufacturing method of the same
A semiconductor light emitting device which has a wavelength converting part on a semiconductor film and can eliminate unevenness in emission color without a reduction in light output. The semiconductor film includes a light emitting layer. The support substrate is bonded to the semiconductor film via a light-reflecting layer and has a support surface supporting the semiconductor film and edges located further out than the side surfaces of the semiconductor film. The light-shielding part covers the side surfaces of the semiconductor film and part of the support surface around the semiconductor film in plan view. The wavelength converting part contains a fluorescent substance and is provided over the support substrate to bury the semiconductor film and the light-shielding part therein. The wavelength converting part has a curved surface shape in which its thickness increases when going from the edges toward the center of the semiconductor film. |
| US08735919B2 |
Group III-nitride based semiconductor LED
A group III-nitride based semiconductor LED includes a sapphire substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer grown sequentially on the sapphire substrate. An n-type strain lattice structure is arranged between the n-type semiconductor layer and the active layer. A lattice constant of the n-type strain lattice structure exceeds that of the active layer, and is less than that of the n-type semiconductor layer. |
| US08735913B2 |
Light emitting semiconductor structure
The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate. |
| US08735912B2 |
Light emitting element, light emitting device using the light emitting element, and transparent substrate used in light emitting elements
In order to improve the light extraction efficiency of a light-emitting element, the light-emitting element includes: a light-emitting layer provided between an electrode and a transparent substrate; a particle layer provided between the light-emitting layer and the transparent substrate; and an adhesive layer provided between the light-emitting layer and the particle layer, the particle layer includes particles having a refraction index that is higher than a refraction index of the transparent substrate, the adhesive layer has a refraction index that is higher than the refraction index of the transparent substrate, and the particle layer has an average thickness that is less than an average particle size of the particles. |
| US08735911B2 |
Light emitting device having shared electrodes
A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply. |
| US08735906B2 |
Semiconductor device and method of manufacturing semiconductor device
The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type made of SiC, a body region of a second conductivity type formed on a surface layer portion of the semiconductor layer, a gate trench dug down from a surface of the semiconductor layer with a bottom surface formed on a portion of the semiconductor layer under the body region, source regions of the first conductivity type formed on a surface layer portion of the body region adjacently to side surfaces of the gate trench, a gate insulating film formed on the bottom surface and the side surfaces of the gate trench so that the thickness of a portion on the bottom surface is greater than the thickness of portions on the side surfaces, a gate electrode embedded in the gate trench through the gate insulating film, and an implantation layer formed on a portion of the semiconductor layer extending from the bottom surface of the gate trench to an intermediate portion of the semiconductor layer in the thickness direction by implantation of a second conductivity type impurity. |
| US08735897B2 |
Semiconductor device
In an inverted staggered thin film transistor, a microcrystalline silicon film and a pair of silicon carbide films are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the pair of silicon carbide films are formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity. |
| US08735895B2 |
Electronic device including graphene thin film and methods of fabricating the same
Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure. |
| US08735894B2 |
Light emitting diode package structure
The invention provides a light emitting diode package structure, including: a light emitting diode chip formed on a substrate; a composite coating layer formed on the light emitting diode chip, wherein the composite coating layer comprises a first coating layer and a second coating layer, and the composite coating layer has a reflectivity greater than 95% at the wavelength of 500-800 nm; a cup body formed on the substrate, wherein the cup body surrounds the light emitting diode chip; and an encapsulation housing covering the light emitting diode chip, wherein the encapsulation housing comprises a wavelength transformation material. |
| US08735890B2 |
Display substrate and method of manufacturing the display substrate
In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified. |
| US08735886B2 |
Image detector
An image detector comprises: an active matrix-type TFT array substrate having a pixel area, in which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, a data line, and a bias line; a conversion layer, which is arranged on the TFT array substrate and converts radiation into light; and a conductive cover, which covers the conversion layer, wherein the conductive cover is adhered in an adhesion area in an upper layer than an area, in which at least one of the data line and the bias line extend from the pixel area to each of terminals, and wherein inorganic insulation films configured by at least two layers are formed between the at least one of the data line and the bias line and the adhesion area. |
| US08735883B2 |
Oxide thin film transistor and method of fabricating the same
A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C=Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z≧0). |
| US08735881B1 |
Resin film forming sheet for chip, and method for manufacturing semiconductor chip
A sheet for forming a resin film for a chip, with which a semiconductor device is provided with a gettering function, is obtained without performing special treatment to a semiconductor wafer and the chip. The sheet has a release sheet, and a resin film-forming layer, which is formed on the releasing face of the release sheet, and the resin film-forming layer contains a binder polymer component, a curing component, and a gettering agent. |
| US08735879B2 |
Organic light-emitting diode comprising at least two electroluminescent layers
The invention provides an organic light-emitting diode which includes at least two electroluminescent layers (ELR, ELB), both of which are fluorescent or phosphorescent and emit at different wavelengths, as well as a hole- and electron-conducting buffer layer (T) arranged between the electroluminescent layers. The buffer layer is a bi-layer having an electron-transport layer (T2) and a hole-transport layer (T1), each one of the hole- and electron-transport layers being made of one or more materials in which the HOMO level(s) are comprised between or equal to the HOMO levels of the electroluminescent layers, and in which the LUMO levels are between or equal to the LUMO levels of said electroluminescent layers, with a tolerance of 0.3 eV. |
| US08735873B2 |
Organic light emitting diode
An organic light emitting diode includes: a first electrode; a first hole transporting layer on the first electrode; a first emitting material layer on the first hole transporting layer, the first emitting material layer including a first host with a first dopant, wherein an energy level of a lowest unoccupied molecular orbital of the first dopant is higher than an energy level of a lowest unoccupied molecular orbital of the first host; a first electron transporting layer on the first emitting material layer; and a second electrode on the first electron transporting layer, wherein an energy level of each of the first hole transporting layer and the first electron transporting layer is higher than an energy level of a triplet state exciton of the first emitting material layer. |
| US08735872B2 |
Organic light emitting diode display having a reflective electrode and a reflective layer
An organic light emitting diode (OLED) display includes: a substrate including a first area and a second area; a first electrode at the first area of the substrate, and a first electrode at the second area of the substrate; a reflective electrode on the first electrode at the first area; a barrier rib on the substrate, the barrier rib having openings exposing the reflective electrode and the first electrode at the second area; an organic emission layer on the reflective electrode and the first electrode at the second area; a second electrode on the organic emission layer; and a reflective layer on the second electrode at the second area. |
| US08735869B2 |
Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional channel region is disposed above the insulating structure. Source and drain regions are disposed on either side of the three-dimensional channel region and on an epitaxial seed layer. The epitaxial seed layer is composed of a semiconductor material different from the three-dimensional channel region and disposed on the insulating structure. A gate electrode stack surrounds the three-dimensional channel region with a portion disposed on the insulating structure and laterally adjacent to the epitaxial seed layer. |
| US08735868B2 |
Semiconductor optical modulator
A semiconductor optical modulator includes a first n-type semiconductor region, a first p-type semiconductor region, an i-type semiconductor region, a second p-type semiconductor region, and a second n-type semiconductor region that constitute a stacked layer structure. The stacked layer structure includes a first cladding layer, a second cladding layer, and a core layer disposed between the first and second cladding layer. The first n-type semiconductor region and the first p-type semiconductor region form a first p-n junction disposed in an intermediate region between the first and second cladding layer. The second p-type semiconductor region and the second n-type semiconductor region form a second p-n junction disposed in the intermediate region or the second cladding layer. The intermediate region, the first n-type semiconductor region, and the second n-type semiconductor region include the core layer, the first cladding layer, and part or all of the second cladding layer, respectively. |
| US08735867B2 |
Group III nitride nanorod light emitting device
There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof. |
| US08735866B2 |
High-voltage electronic device
A high-voltage electronic device comprising high-voltage electrodes, located in a dielectric envelope with an internal surface coated with a material having a conductivity which is greater than the conductivity of the envelope, characterized in that the areas subject to high field strength are coated with composite material, based on a polycrystalline material with a bulk conductivity of particles 10−9 to 10−13 Ohm−1 cm−1, each of which contains a surface nanolayer of bonding inorganic material. The high-voltage electrodes may be placed in a vacuum envelope and fixed on coated insulators. Preferred coating materials include materials from a group of materials comprising; oxides of chromium, boron or zirconium in the form of polycrystalline porous substance with a particle size of 30 nm-30 microns, connected to each other with an inorganic material, for instance silicon oxide (SiO2) with a layer thickness not more than 100 nm. |
| US08735863B2 |
Integrated nonvolatile resistive memory elements
A resistive memory apparatus provides resistive memory material between conductive traces on a substrate or in a film stack on a substrate. The resistive memory apparatus may provide a sealed cavity or may utilize material obviating the need for the cavity. Methods and materials utilized to form the resistive memory apparatus are compatible with current microelectronic fabrication techniques. The resistive memory apparatus is nonvolatile or requires no power to maintain a programmed state. The resistive memory device may also be directly integrated with other microelectronic components. |
| US08735855B2 |
Ion beam irradiation system and ion beam irradiation method
An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction. |
| US08735850B2 |
Method and apparatus for ebeam treatment of webs and products made therefrom
A method and apparatus for sterilization of webs and products made therefrom using electron beams (ebeams) is provided. A controller is configured to modulate an ebeam to ensure that a non-continuously moving web is sterilized within a desired range of exposure. During sterilization in place operations, manifolds are configured to operate to ensure that sterilants do not enter an irradiation zone to prevent damage to ebeam emitters. |
| US08735849B2 |
Detector for use in charged-particle microscopy
A method of investigating a sample using a charged-particle microscope is disclosed. By directing an imaging beam of charged particles at a sample, a resulting flux of output radiation is detected from the sample. At least a portion of the output radiation is examined using a detector, the detector comprising a Solid State Photo-Multiplier. The Solid State Photo-Multiplier is biased so that its gain is matched to the magnitude of output radiation flux. |
| US08735844B1 |
Compact neutron imaging system using axisymmetric mirrors
A dispersed release of neutrons is generated from a source. A portion of this dispersed neutron release is reflected by surfaces of a plurality of nested, axisymmetric mirrors in at least an inner mirror layer and an outer mirror layer, wherein the neutrons reflected by the inner mirror layer are incident on at least one mirror surface of the inner mirror layer N times, wherein N is an integer, and wherein neutrons reflected by the outer mirror are incident on a plurality of mirror surfaces of the outer layer N+i times, where i is a positive integer, to redirect the neutrons toward a target. The mirrors can be formed by a periodically reversed pulsed-plating process. |
| US08735842B2 |
Non-visible particle detection based on smart phone
A non-visible particle detection device includes an optical module capable of converting an ionizing radiation into visible light. The optical module includes has an attachment unit that is configured to removably attach the optical module to the image capturing module of a mobile device. The image capturing module generates a photon digital image based on the photons converted from the ionizing radiation. The mobile device can be implemented with a radiation dose determining module to execute a radiation dose equivalent calculation method. Based on the pixel brightness analysis of the photon digital image, the radiation equivalent dose can be determined. This method sums up the total brightness of all pixels in the images, determines whether the total brightness is smaller than the minimum effective brightness, and determines the radiation equivalent dose when the total brightness is equal to or larger than the minimum effective brightness. |
| US08735840B2 |
Solid-body X-ray image detector with circular detector surface area
A solid-body X-ray image detector and method of manufacturing the same are disclosed. The detector has a circular surface area arrangement of CCD or CMOS detector pixels on a substrate, a scintillator arranged on the substrate, and a circular detector surface area, wherein the substrate comprises a single, substantially circular silicon wafer and the detector surface area takes up the surface area of the silicon wafer up to a narrow edge region. |
| US08735838B2 |
Radiation detecting apparatus
A radiation detecting apparatus comprises: a first detector that detects incidence of radiation; a plate-shaped detection substrate including a second detector that detects an incident position of the radiation to at least the first detector, and a first terminal that is electrically connected to the second detector; a wiring substrate including a second terminal and an external terminal that is electrically connected to the second terminal; and a connecting member that electrically connects the first terminal and the second terminal. The first terminal is arranged at one end of a main surface of the plate-shaped detection substrate. The detection substrate is mounted on the wiring substrate such that the main surface is substantially perpendicular to the wiring substrate in a state that the one end faces the wiring substrate. The first detector is arranged opposite to the main surface of the detection substrate. |
| US08735833B2 |
Photomultiplier and detection systems
The invention provides a switchable photomultiplier switchable between a detecting state and a non-detecting state including a cathode upon which incident radiation is arranged to impinge. The photomultiplier also includes a series of dynodes arranged to amplify a current created at the cathode upon detection of photoradiation. The invention also provides a detection system arranged to detect radiation-emitting material in an object. The system includes a detector switchable between a detecting state in which the detector is arranged to detect radiation and a non-detecting state in which the detector is arranged to not detect radiation. The system further includes a controller arranged to control switching of the detector between the states such that the detector is switched to the non-detecting state while an external radiation source is irradiating the object. |
| US08735832B2 |
Data acquisition
An imaging detector includes a scintillator array (202), a photosensor array (204) optically coupled to the scintillator array (202), a current-to-frequency (I/F) converter (314), and logic (312). The I/F converter (314) includes an integrator (302) and a comparator (310), and converts, during a current integration period, charge output by the photosensor array (204) into a digital signal having a frequency indicative of the charge. The logic (312) sets a gain of the integrator (302) for a next integration period based on the digital signal for the current integration period. In one instance, the gain is increased for the next integration period, relative to the gain for the current integration period, which allows for reducing an amount of bias current injected at an input of the I/F converter (314) to generate a measurable signal in the absence of radiation, which may reduce noise such as shot noise, flicker noise, and/or other noise. |
| US08735829B2 |
Radiographic image capturing system, program storage medium, and method
A radiographic image capturing system includes a radiographic image capturing device, a grid, an acquiring unit, and a processor. The radiographic image capturing device includes a radiation detector in which pixels having a sensitivity with respect to radiation or light are disposed two-dimensionally at a predetermined pixel spacing. The grid is placed on a radiation source side of the radiation detector, and includes radiation absorbing members that are disposed at a predetermined spacing. The acquiring unit acquires an inclination angle of the grid, with respect to an array direction of the pixels, with which a spatial frequency of moiré fringes generated by the absorbing members in a captured radiographic image will be equal to or greater than a predetermined spatial frequency. The processor executes predetermined processing for making a relative angle between the grid and the radiation detector the acquired inclination angle. |
| US08735828B2 |
Real-time in vivo radiation dosimetry using scintillation detectors
Apparatus and methods for measuring radiation levels in vivo in real time. Apparatus and methods include a scintillating material coupled to a retention member. |
| US08735826B2 |
Human infrared recipient processor
An IP processing technology is disclosed, and more particularly to a human infrared recipient processor, comprising: an amplifying circuit, a switch control circuit for output of switching signals, a PIR for obtaining analogue human IR signals, a PHOT for obtaining brightness signals, a main controller IC1 used for A/D conversion and digital filtering of analogue human IR signals and logical control/output of high-/low-level signals by the brightness and switching signals, as well as an external output circuit for controlling the working states depending on high-/low-level signals; wherein the human infrared recipient processor of the present invention features simple construction, higher SNR, stability, and sensitivity as well as stronger logical functions. |
| US08735825B2 |
Optical position detection device
In an optical position detection device, when light source sections emit detection light, a light detecting section detects detection light reflected from a object to detect the coordinates of the object. When seen from the detection space, the light detecting section is located inward from a plurality of light source sections, and each of the plurality of light source sections includes first and second light emitting elements. Therefore, the position of the object can be detected on the basis of a comparison result of the received light intensity in the light detecting section when the first light emitting element is turned on and the received light intensity in the light detecting section when the second light emitting element is turned on in both the case where the object is located outside a region between the light source sections and the case where the object is located inside the region. |
| US08735822B2 |
Method for detecting and measuring low concentrations of contaminants using attenuated total reflectance spectroscopy in the mid-IR range
A spectroscopic method is disclosed for detecting and measuring contaminants in fluids such as water or oil, where the hydrophilicity of the contaminant is substantially different from that of the contaminated fluid. Good calibrations can be obtained at very low concentrations using infrared spectroscopy with ATR crystals that have not been additionally coated or otherwise modified. |
| US08735820B2 |
Direct match spectrographic determination of fuel properties
A method and apparatus for deriving a refinery product property value based on data produced from a globally-calibrated spectrographic analyzer and data from a non-spectrographic analyzer. |
| US08735814B2 |
Electron beam device
The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution. |
| US08735813B2 |
Method and device for carrying out a quantitative spatially resolved local analysis and distribution analysis of chemical elements and in situ characterization of ablated surface regions
A laser ablation chamber, which is suitable for use in a conventional laser-assisted micro dissection unit (LMD), in combination with the LMD allows for both quantitative spatially resolved nanolocal analysis and distribution analysis of element concentrations of a sample, and a microscopic detection of the surface topography of the same sample, in the nanometer range. Optionally, further examinations may follow, without having to remove the sample from a microscope slide bearing the sample. For the examination, a region of the sample to be analyzed is selected with the aid of a microscope of a LMD. For this purpose, the sample is located on the lower face of a cover slip (microscope slide), which also forms part of a laser ablation chamber mounted beneath the microscope slide and inside the LMD. A portion of the sample is ablated and analyzed. Optionally, the existing LMD instrumentation may be used to deliberately cut out certain regions of the tissue in which metals were detected for further analytics and to collect these regions in sample containers, which are mounted beneath the microscope slide after the laser ablation. |
| US08735810B1 |
Time-of-flight mass spectrometer with ion source and ion detector electrically connected
A time-of-flight mass spectrometer includes a sample plate that supports a sample for analysis. A pulsed ion source generates a pulse of ions from the sample positioned on the sample plate. An ion accelerator receives the pulse of ions generated by the pulsed ion source and accelerates the ions. An ion detector includes an input in a flight path of the accelerated ions emerging from the field-free drift space and an output that is electrically connected to the sample plate. The ion detector converts the detected ions into a pulse of electrons. |
| US08735806B2 |
Mass-analyzing method and mass spectrometer
Based on the mass spectrum obtained by mass-analyzing a sample, the composition of the unknown substance is deduced, and after that, an MS/MS analysis is performed in which the unknown substance is set to be a precursor ion. Then, based on the peaks appearing on the MS/MS spectrum, the actually measured mass of each product ion is obtained (S1 through S4). On the other hand, the compositions of the product ion generated by the dissociation of the unknown substance are obtained by the combination, i.e. the condition, of the kind of the constituent element and the number of each element of the unknown substance's deduced component. Then, it is checked whether or not the theoretical mass in consistency with the actually measured mass of the product ion exists (S5). In the case where one which is consistent with a theoretical mass is not existent, it is possible to determine that the original deduction of the known substance's composition has been incorrect. Therefore, this result is given to the composition deduction as feedback to refine the candidates for the unknown substance's composition (S6). |
| US08735801B2 |
Optical encoder
In order to reduce an error component of a detected waveform and enable high-accuracy position detection, there is provided an optical encoder, in which a transmittance distribution or a reflectance distribution provided in a scale track in a displacement scale has a first modulation period and a second modulation period in a scale displacement direction, the light receiving element array is arranged to detect a first signal group including two-phase signals, relative phases of which are reversed, in the first modulation period and a second signal group including two-phase signals, relative phases of which are reversed, in the second modulation period, first position information in the first modulation period is detected from the first signal group, and second position information in the second modulation period is detected from the second signal group, and the second modulation period is an odd multiple of the first modulation period. |
| US08735799B2 |
Optical touch panel and optical touch device
The present invention discloses an optical touch panel including a support plate, a light emitting element, an optical fiber, an optical sensing element and a control unit. The optical fiber is arranged on the support plate in a bending manner. A light beam generated by the light emitting element is transmitted through the optical fiber and received by the optical sensing element. When the optical fiber is touched by an object, an optical return is generated within the optical fiber and received by the optical sensing element. As a result, the control unit obtains a contact location where the object located according to the receiving time of the light beam, the receiving time of the optical return and the conduction velocity of the light beam. |
| US08735797B2 |
Nanowire photo-detector grown on a back-side illuminated image sensor
An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. |
| US08735794B2 |
Multiple clocking modes for a CCD imager
A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase. |
| US08735792B2 |
Optoelectronic sensor
An optoelectronic sensor (10) for monitoring a working area (42) is provided, the working area (42) being located within a detection area (20) of the sensor (10) and in a first distance from the sensor (10), wherein the sensor (10) comprises an illumination unit (22) with a light source (24) for at least partially illuminating the working area (42), and an object detection unit (30) for detecting forbidden objects in the working area (42), wherein an illumination control (28) of the illumination unit (22) is configured to, during a startup period, initially activate the illumination unit (28) with a lower power such that a provisional working area (40, 40a-c) in a second distance from the sensor (10) less than the first distance is illuminated at most with a predetermined maximum light output; test whether there is a forbidden object intrusion into the provisional working area (40, 40a-c); and if no forbidden object intrusion is detected, activate the illumination unit (28) with a higher power such that the working area (42) is illuminated at most with the predetermined maximum light output. The illumination control (28) comprises a short range object detection unit (39) configured to test the provisional working area (40, 40a-c) in a different way than the object detection unit (30) tests the working area (42). |
| US08735788B2 |
Propulsion and maneuvering system with axial thrusters and method for axial divert attitude and control
Embodiments of a propulsion and maneuvering system that may be suitable for use during a terminal phase in an interceptor are generally described herein. The propulsion and maneuvering system may include one or more axial thrusters to provide thrust along axial thrust lines that run through a center-of-gravity of the interceptor and a plurality of divert thrusters to provide thrust in radial directions. The combination of divert and axial thrusters may allow the interceptor to respond to a maneuvering target and may allow the interceptor to increase its velocity along a line-of-sight (LOS) to a target to change target impact/engagement time. |
| US08735786B2 |
Microwave popcorn package
A microwave popcorn package includes a flexible bag construction reinforced with a sidewall construction. The package is such that the flexible bag construction and the sidewall construction are expandable between a collapsed configuration and an expanded configuration. After the package is opened, the sidewall construction provides for a vertically rigid sidewall to provide a stand up bowl for access to the popped popcorn. The flexible bag construction may be fabricated from a generally transparent material so that the contents of the bag are visible when the package is in the expanded configuration. |
| US08735778B2 |
Convection oven
A convection oven having a vapor collection system; water injection system; easily accessible electrical components; and a variable-speed, reversible blower. The vapor collection system collects vapor from the cooking chamber during a cooking event, condenses the vapor, and drains the condensed vapor. The water injection system injects water for impact against a blower wheel for dispersion into the air circulating through the cooking chamber. The electrical components are housed within a housing that in a closed position conceals the components and in a closed position exposes the components for easy access. The rotational speed and direction of the variable-speed, reversible blower is controlled during a cooking event according to predetermined speed curves which may include one or more reversal events to achieve more uniform cooking of food. A main controller is programmable via an operator input (e.g., liquid crystal display touch screen) to control operating parameters of the oven. |
| US08735774B2 |
Force reaction compensation system
A laser beam propagates along a beam axis for incidence on a work surface mounted on a support. The support operatively connects to a positioning system moving at least one of the laser beam and the target specimen relative to each other to position the laser beam at selected locations on the work surface. At least one force reaction compensation motor is located in a common force plane with, and as close as possible to, a corresponding stage motor. Any moment arm between the compensation motor and the corresponding stage motor is reduced or eliminated, allowing the compensation motor to directly couple and react to stage forces with virtually zero moment arm. Six degrees of freedom can be controlled with only four motors, since each compensation motor is directly coupled and aligned to a corresponding stage motor. |
| US08735772B2 |
Method and apparatus for improved laser scribing of opto-electric devices
Disclosed are laser scribing systems for laser scribing semiconductor substrates with backside coatings. In particular these laser scribing systems laser scribe opto-electric semiconductor wafers with reflective backside coatings so as to avoid damage to the opto-electric device while maintaining efficient manufacturing. In more particular these laser scribing systems employ ultrafast pulsed lasers at wavelength in the visible region and below in multiple passes to remove the backside coatings and scribe the wafer. |
| US08735769B2 |
Laser processing head and laser cladding method
A laser processing head in accordance with the present invention comprises: a laser emitting unit for irradiating a workpiece with a laser light; and a powder feeder disposed around a periphery of the laser emitting unit for discharging filler material powder to the workpiece, in which the powder feeder includes: a position adjustment mechanism for adjusting a position where the powder concentrates; and a powder concentration diameter adjustment mechanism for adjusting a diameter of the filler material powder. The laser processing head further comprises a controller for controlling the position adjustment mechanism and the powder concentration diameter adjustment mechanism. |
| US08735766B2 |
Cathode assembly and method for pulsed plasma generation
A cathode assembly and a method for generation of pulsed plasma are disclosed. The cathode assembly comprises a cathode holder connected to multiple longitudinally aligned cathodes, preferably of the same diameter, and different lengths. The method is characterized by forming an electric arc between the cathodes in the assembly and an anode by passing DC current of a predetermined magnitude. Once the arc is established the current is reduced to the magnitude sufficient to sustain an electric arc, or a slightly larger magnitude, thereby reducing the area of arc attachment to a single cathode. Once the area of attachment has been reduced, the current is raised to the operational level of the pulse, while the area of attachment does not increase significantly. |
| US08735762B2 |
Wire electric discharge machine capable of detecting machining state and determining average voltage in machining gap
In order to detect a machining state of a wire electric discharge machine, the state of a machining gap is classified into three categories; an open-circuit state in which electric discharge does not occur after a first predetermined level is reached or surpassed by a machining-gap voltage, an electric discharge state in which electric discharge occurs after a second predetermined level is reached or surpassed by the machining-gap voltage, whereby the machining-gap voltage becomes lower than the second predetermined level, and a short-circuit state wherein a third predetermined level is not reached or surpassed by the machining-gap voltage. An average voltage in the machining gap is determined based on voltages in these states and the number of cycles of voltage application to the machining gap, number of open-circuits, number of discharges, and number of short-circuits per unit time. |
| US08735759B2 |
Features to limit the exhaust debris exiting a circuit breaker
A debris collection slot or groove formed near the exit of a vent channel in a circuit breaker. Debris is produced during a circuit interruption, causing the debris to travel into the vent channel toward an opening where it exits the circuit breaker. Too much accumulated debris can lead to a ground strike or a cross-phase condition. The debris collection groove, formed near the exit opening of the vent channel, has no significant effect on the internal pressure generated during the circuit interruption. Multiple grooves can be formed near the exit opening for trapping more debris. When the vent channel is bent, the grooves are positioned on the outer curve of the last bend of the vent channel to trap the higher-density debris traveling around the curve. |
| US08735754B2 |
Power transfer switch
A power transfer switch in which a cross bar including a movable contact is rotated to come into contact with one of fixed contacts disposed on left and right sides of the cross bar. The cross bar has a non-circular cross-section including a protruded piece on left and right, and a rotating angle thereof is greater than a rotating allowable angle of the movable contact between the fixed contacts. A through hole into which the cross bar is inserted with play is formed on a base portion of the movable contact, and a step portion for receiving the protruded piece of the cross bar and a spring housing portion extended in a direction of a central axis of the movable contact are formed in the through hole. A compression spring is accommodated in the spring housing portion to cause the cross bar to elastically hold the movable contact. |
| US08735752B2 |
Multipole electrical switching device
A multipole electrical switching device is disclosed with an outer housing in which at least two separate switching pole housings are accommodated. In at least one embodiment, the at least two separate switching pole housings on walls facing towards one another, each have a least one mounting which form a mounting pair assigned to one another. In at least one embodiment, for mechanical connection of the at least two separate switching pole housings, the mounting pair is assigned at least one connection device which engages into the two mountings forming the mounting pair. The two mountings forming the mounting pair, in relation to a dividing joint formed between the two facing walls, each form an undercut, whereby the at least one connecting device engages behind the undercuts and the at least one connecting device is formed in a primary process in one piece on the outer housing. |
| US08735750B2 |
Switching device and a method for forming a switching device
Embodiments provide a switching device. The switching device includes a substrate, which includes a contact region. The switching device further includes a vertical layer arrangement extending from the substrate next to the contact region. The vertical layer arrangement includes a control layer. The switching device further includes a freestanding silicon cantilever extending vertically from the contact region. |
| US08735747B2 |
Compact double-contact secured pushbutton switch
A pushbutton switch comprises a plunger, which provokes, under the action of pressure by a user, the depression of an upper dome positioned above switching means, any depression of the upper dome necessarily provoking the depression of the switching means, the crest of the upper dome and the switching means having a down position, a first electric contact being produced between a primary contact and a secondary contact of the upper dome forming a first electric circuit when the crest of the upper dome is in the down position, and a second electric contact being produced between a primary contact and a secondary contact of the switching means forming a second electric circuit when the switching means are in the down position. |
| US08735744B2 |
Three-cable port grommet washer
A cable attachment assembly for sealing and retaining three flat cables entering a telecommunications closure provides a grommet having three radially arrayed passageways and a grommet washer having a flat portion and a raised portion for simultaneously maintaining compressive force to the grommet and mitigating creep of the grommet during thermal cycling. |
| US08735743B2 |
Transducer device having strain relief coil housing
A transducer device includes an annular housing having a base wall adjoining a pair of annular side walls. The base and side walls define an annular groove. An access port and at least one strain relief opening are formed in the base wall. The at least one strain relief opening is spaced apart from the access port. A conductor is disposed in the annular groove. |
| US08735741B2 |
Circuit board and mounting structure using the same
A circuit board comprises a substrate; a through hole penetrating the substrate along with a direction of a thickness thereof; and a through hole conductor covering an inner wall of the through hole. The substrate comprises a first fiber layer, a second fiber layer, and a resin layer arranged between the first fiber layer and the second fiber layer. Each of the first fiber layer and the second fiber layer has a plurality of fibers and a resin arranged among the plurality of the fibers. The resin layer contains a resin and doesn't contain a fiber. The inner wall of the through hole, in a cross-section view along with the direction of the thickness of the substrate, comprises a curved depression in the resin layer. |
| US08735740B2 |
Method and apparatus for optically transparent via filling
A method and apparatus for filling a via with transparent material is presented, including the steps of providing a panel having a via, occluding the via with transparent material in a workable state so that a portion of the occluding material is internal to the via and a portion of the material is external to said via. The external and internal portions are separated so the transparent filler material, when set, forms a smooth and featureless surface. This causes the filled via to have a substantially even and uniform appearance over a wide range of viewing angles when lit. |
| US08735732B2 |
Multilayer substrate
A multilayer substrate is configured by stacking conductive layers and insulation layers. The multilayer substrate includes a core that is one of the conductive layers and is thicker than any of other conductive layers, and a first signal line that is included in the conductive layers and is adjacent to the core so that a first insulation layer that is one of the insulation layers is interposed between the core and the first signal line, the first signal line being used for transmission of an RF signal. The core has a recess portion so as to face the first signal line. |
| US08735729B2 |
Double-sided substrate, semiconductor device and method for the same
A double-sided substrate includes a ceramic substrate, a first metal layer formed on one surface of the ceramic substrate and having a plurality of subsidiary metal layers which are laminated on the surface of the ceramic substrate and whose purities differ from each other and a second metal layer formed on the other surface of the ceramic substrate, wherein the closer to the ceramic substrate any subsidiary metal layer is located, the lower purity the subsidiary metal layer has. Additionally, a semiconductor includes the above double-sided substrate, a power element and a heat sink. |
| US08735728B2 |
Printed circuit board with fins
A printed circuit board includes an insulating layer, a signal trace, a ground trace, and a fin. The insulating layer has a first surface and an opposite second surface. The signal trace and the ground trace are formed on the first surface of the insulating layer. The first fin is directly formed on the ground trace. Also provided is a method for manufacturing the printed circuit board. |
| US08735727B2 |
Electronic device having cable holding device
An electronic device having a cable holding device is disclosed. The electronic device comprises a case; a circuit board in the case; a cable holding device attached to the circuit board and defining a through hole, a first positioning slot and a second positioning slot; the first positioning slot communicating with the through hole, and the second positioning slot communicating with the through hole; a cable electronically connected to the circuit board; wherein the cable is received either in the first positioning slot and the through hole or in the second positioning slot and the through hole. |
| US08735726B2 |
Jacket for data cable
A jacket for a data cable that comprises a main jacket body having an inner area for receiving one or more filaments and a central longitudinal axis. The main body has an inner surface that surrounds the inner area and an opposite outer surface. At least one longitudinal opening extends through the main jacket body between the inner and outer surfaces and substantially parallel to the central longitudinal axis of the main jacket body. The longitudinal opening is substantially enclosed within the main jacket body. |
| US08735722B2 |
End fitting for a cable with sealing protrusion and enclosure assembly with end fitting
The invention relates to an end fitting and an enclosure assembly with the end fitting, and with a sealing enclosure. In order to improve the reliability of the enclosure assembly, the invention provides that the end fitting is provided with a sealing protrusion and that a sealing section and a retention section of the sealing enclosure are arranged one behind the other in a connection direction. |
| US08735719B2 |
Leaky solar array with spatially separated collectors
A leaky travelling wave array of optical elements provide a solar wavelength rectenna. |
| US08735718B2 |
Electrode structure, method and applications
An organic photovoltaic cell structure and a method for fabricating the organic photovoltaic cell structure are each predicated upon an organic photovoltaic material layer located and formed interposed between an anode and a cathode. The organic photovoltaic cell structure and the method for fabricating the organic photovoltaic cell structure also include for the anode a nickel and indium doped tin oxide material layer (Ni-ITO) that has a nickel doping sufficient to provide a work function of the nickel and indium doped tin oxide material layer (Ni-ITO) anode preferably no more positive than about −5.0 eV. Such a composition of the nickel and indium doped tin oxide material layer (Ni-ITO) anode provides for a superior bandgap matching to a B3HT p-type donor component within a B3HT:BPCM BHJ organic photovoltaic material layer while also providing a greater bandgap separation of an aluminum material layer (Al) cathode to provide for enhanced electric field and charge carrier transport and collection capabilities of an organic photovoltaic cell device that derives from the organic photovoltaic cell structure. |
| US08735717B2 |
Thin film solar cell and method of manufacturing the same
A highly reliable thin film solar cell and a method of manufacturing the same are provided to improve bonding strength between a back-surface electrode layer and a bus bar without limiting the kind of metal film of the back-surface electrode layer. The thin film solar cell at least includes a light-transmitting insulating substrate, a transparent conductive film, a photoelectric conversion layer, and a back-surface electrode layer provided on the light-transmitting insulating substrate, and a bus bar provided on the back-surface electrode layer. The bus bar is electrically connected with the back-surface electrode layer with a conductive tape interposed whereby the back-surface electrode layer is used as a take-out electrode. The conductive tape preferably includes a thermosetting resin and a conductive particle. Furthermore, the conductive tape is preferably an anisotropic conductive tape. |
| US08735716B2 |
Solar cell and method for fabricating the same
A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate. |
| US08735713B2 |
Sun-chasing device
A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased. |
| US08735709B2 |
Generation of harmony tone
A lead tone is generated on the basis of an input tone signal. Meanwhile, a specific pitch of the input tone signal is sequentially detected, from which is detected a normalized pitch corresponding to any one of the musical pitch names. Then, difference information is obtained which pertains to a difference between the specific pitch and the normalized pitch, and a pitch having a given pitch interval from the normalized pitch is determined as a target pitch of a tone signal to be generated. Then, a harmony tone is generated which has a pitch obtained by modulating the target pitch in accordance with the difference information. |
| US08735708B1 |
System and method for synchronizing tag history
Systems and methods for music recognition and/or tag history synchronization are described. The system includes, for example, a first device, a second device and a server. The first device is configured to record music from a surrounding environment. The first device wirelessly sends the recorded music to the server for identification. The server is configured to identify the recorded music and to generate a tag corresponding to the identified music. The first tag history is updated to include the tag which includes information corresponding to the identified music. The first device and the second device are registered with the server as part of a particular user account. The server is configured to synchronize a second tag history stored in the second device with the updated first tag history. |
| US08735706B2 |
Musical instrument keyboard having identically shaped black and white keys
A musical instrument keyboard is provided comprising a plurality of black and white keys being identically shaped and sized and arranged on a single plane in a parallel and fully adjacent manner relative to one another said keys being connected to key responsive means for enabling the generation of tones substantially within the tonal range of a standard piano. |
| US08735705B1 |
Drum beating apparatus
A drum beating apparatus is provided. A base includes a bottom plate and a first post disposed on the bottom plate, and a connecting portion is arranged on the first post. An axle is coupled to the first post and rotatable around an axis of the axle. A linking assembly has corresponding first and second ends, a rod element which is connected between the first and second ends and an elastic element. The first end is pivoted to one end of the axle, the rod element is disposed through the connecting portion, and the elastic element is disposed around the rod element and located between the second end and the connecting portion. One end of a pedal is swingably coupled to one end of the bottom plate, and the other end of the pedal is co-movably connected to the axle. |
| US08735703B2 |
Percussion instrument
A percussion instrument (1) in the form of a drum being a rectangular parallelepiped or a cuboid in shape and having three or more live striking faces (2), wherein each striking face (2) has a different percussive property. The invention further comprises a stand (30) specifically adapted to support a percussion instrument (1) in the form of a cuboid drum. |
| US08735701B2 |
Tone control device for use with a musical instrument and method for making the same
A tone control device is provided. The tone control device includes a weight assembly including at least a first magnet and a second magnet magnetically attracted to the first magnet, wherein the first magnet is positionable on a first surface of the bridge and the second magnet is positionable on a second surface of the bridge such that the weight assembly is securely coupled to the bridge. |
| US08735699B2 |
Main action rail for upright piano with front-accessible whippen flange screw
An upright piano main action rail with a special cross sectional shape of its lower half that angles or curves towards the back of the piano to effectively relocate the lower front surface of upright piano main action rail from a position in front of the row of whippen flanges as with the prior art to a relocated new position behind the row of whippen flanges to enable the front mounting of whippen flanges to the main action rail. Upright piano main action rail has all whippen mounting holes located its the lower front surface instead of the lower rear surface as with prior art upright piano main action rails. |
| US08735694B1 |
Maize variety hybrid X08B705
A novel maize variety designated X08B705 and seed, plants and plant parts thereof, produced by crossing Pioneer Hi-Bred International, Inc. proprietary inbred maize varieties. Methods for producing a maize plant that comprises crossing hybrid maize variety X08B705 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into X08B705 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. This invention relates to the maize variety X08B705, the seed, the plant produced from the seed, and variants, mutants, and minor modifications of maize variety X08B705. This invention further relates to methods for producing maize varieties derived from maize variety X08B705. |
| US08735692B1 |
Maize inbred PH1M3M
A novel maize variety designated PH1M3M and seed, plants and plant parts thereof. Methods for producing a maize plant that comprise crossing maize variety PH1M3M with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into PH1M3M through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. Hybrid maize seed, plant or plant part produced by crossing the variety PH1M3M or a locus conversion of PH1M3M with another maize variety. |
| US08735685B1 |
Soybean cultivar 27311841
A soybean cultivar designated 27311841 is disclosed. The invention relates to the seeds of soybean cultivar 27311841, to the plants of soybean cultivar 27311841, to the plant parts of soybean cultivar 27311841, and to methods for producing progeny of soybean cultivar 27311841. The invention also relates to methods for producing a soybean plant containing in its genetic material one or more transgenes and to the transgenic soybean plants and plant parts produced by those methods. The invention also relates to soybean cultivars or breeding cultivars, and plant parts derived from soybean cultivar 27311841. The invention also relates to methods for producing other soybean cultivars, lines, or plant parts derived from soybean cultivar 27311841, and to the soybean plants, varieties, and their parts derived from use of those methods. The invention further relates to hybrid soybean seeds, plants, and plant parts produced by crossing cultivar 27311841 with another soybean cultivar. |
| US08735682B2 |
Soybean variety A1036387
The invention relates to the soybean variety designated A1036387. Provided by the invention are the seeds, plants and derivatives of the soybean variety A1036387. Also provided by the invention are tissue cultures of the soybean variety A1036387 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety A1036387 with itself or another soybean variety and plants produced by such methods. |
| US08735681B2 |
Soybean variety A1036372
The invention relates to the soybean variety designated A1036372. Provided by the invention are the seeds, plants and derivatives of the soybean variety A1036372. Also provided by the invention are tissue cultures of the soybean variety A1036372 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety A1036372 with itself or another soybean variety and plants produced by such methods. |
| US08735678B2 |
Soybean variety A1035365
The invention relates to the soybean variety designated A1035365. Provided by the invention are the seeds, plants and derivatives of the soybean variety A1035365. Also provided by the invention are tissue cultures of the soybean variety A1035365 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety A1035365 with itself or another soybean variety and plants produced by such methods. |
| US08735675B2 |
Soybean variety A1026643
The invention relates to the soybean variety designated A1026643. Provided by the invention are the seeds, plants and derivatives of the soybean variety A1026643. Also provided by the invention are tissue cultures of the soybean variety A1026643 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety A1026643 with itself or another soybean variety and plants produced by such methods. |
| US08735671B2 |
Soybean variety A1026046
The invention relates to the soybean variety designated A1026046. Provided by the invention are the seeds, plants and derivatives of the soybean variety A1026046. Also provided by the invention are tissue cultures of the soybean variety A1026046 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety A1026046 with itself or another soybean variety and plants produced by such methods. |
| US08735668B1 |
Soybean variety XBP38012
A novel soybean variety, designated XBP38012 is provided. Also provided are the seeds of soybean variety XBP38012, cells from soybean variety XBP38012, plants of soybean XBP38012, and plant parts of soybean variety XBP38012. Methods provided include producing a soybean plant by crossing soybean variety XBP38012 with another soybean plant, methods for introgressing a transgenic trait, a mutant trait, and/or a native trait into soybean variety XBP38012, methods for producing other soybean varieties or plant parts derived from soybean variety XBP38012, and methods of characterizing soybean variety XBP38012. Soybean seed, cells, plants, germplasm, breeding lines, varieties, and plant parts produced by these methods and/or derived from soybean variety XBP38012 are further provided. |
| US08735662B2 |
Lettuce variety salmon
The present invention relates to a lettuce variety NUN 7824 LT (referred to as “Salmon”) having resistance against downy mildew (Bremia lactucae) and lettuce aphid (Nasonovia ribisnigri) and which has very intense red colored and glossy leaves. The invention further relates to methods for producing the new lettuce variety and representative seed having been deposited under Accession No. NCIMB——————. |
| US08735660B2 |
Methods for the production of plants resistant to HPPD herbicides
Methods for making transgenic plants that are resistant to HPPD herbicides are presented. Polynucleotides other than those from Pseudomonas fluorescens that encode resistant HPPD enzymes are enclosed for use in the process of making transgenic plants that are tolerant to HPPD-inhibiting herbicides. |
| US08735655B2 |
DNA molecules from maize and methods of use thereof
The present invention relates to DNA polynucleotides for regulating gene expression in plants. In particular, the invention relates to 5′ regulatory sequences isolated from Zea mays that are useful for regulating gene expression of heterologous DNA molecules in plant roots. The invention also relates to transgenic plants containing the heterologous DNA molecules. |
| US08735654B2 |
Use of Armadillo repeat (ARM1) polynucleotides for obtaining pathogen resistance in plants
The invention relates to a method of generating or increasing a pathogen resistance in plants by reducing the expression of at least one Armadillo repeat polypeptide or a functional equivalent thereof. The invention relates to novel nucleic acid sequences coding for a Hordeum vulgare Armadillo repeat (HvARM) polynucleotide and describes homologous sequences (ARM1) thereof, and to their use in methods for obtaining a pathogen resistance in plants e, and to nucleic acid constructs, expression cassettes and vectors which comprise these sequences and which are suitable for mediating a fungal resistance in plants. The invention furthermore relates to transgenic organisms, in particular plants, which are transformed with these expression cassettes or vectors, and to cultures, parts or transgenic propagation material derived therefrom. |
| US08735653B2 |
Endogenous regulator of RNA silencing in plants
Compositions and methods are described which use RAV proteins and genes that encode such proteins to regulate RNA silencing in plant cells. Novel ntRAV proteins and genes are also described. |
| US08735651B2 |
Designer organisms for photobiological butanol production from carbon dioxide and water
The present invention provides a biosafety-guarded photobiological butanol production technology based on designer transgenic plants, designer algae, designer blue-green algae (cyanobacteria and oxychlorobacteria), or designer plant cells. The designer photosynthetic organisms are created such that the endogenous photobiological regulation mechanism is tamed, and the reducing power (NADPH) and energy (ATP) acquired from the photosynthetic process are used for synthesis of butanol (CH3CH2CH2CH2OH) directly from carbon dioxide (CO2) and water (H2O). The butanol production methods of the present invention completely eliminate the problem of recalcitrant lignocellulosics by bypassing the bottleneck problem of the biomass technology. The photobiological butanol-production technology of the present invention is expected to have a much higher solar-to-butanol energy-conversion efficiency than the current technology and could also help protect the Earth's environment from the dangerous accumulation of CO2 in the atmosphere. |
| US08735647B2 |
Tampon having spirally shaped grooves
A tampon for feminine hygiene, having an insertion end, a recovery end, a recovery tape, and a longitudinal axis. The tampon is made of compressed fibrous material and has an outer surface that is at least partially provided with spirally shaped, pressed longitudinal grooves. The grooves define spirally shaped longitudinal ribs. Also disclosed is a method for producing the tampon. |
| US08735639B2 |
Preparing a light-olefin containing product stream from an oxygenate-containing feed steam using reactors directing a flow of a fluidized dual-function catalyst system
The present process provides a method for converting an oxygenate-containing feed stream to an olefin-containing product stream. The method includes: (1) providing a first fluidized catalytic reactor for converting methanol to propylene, the first reactor having a fluidized catalyst system comprising a first catalyst and a second catalyst; (2) providing a second fluidized catalytic reactor communicating with the first fluidized catalytic reactor for cracking heavy olefins having four carbon atoms or greater into propylene, the second reactor having the fluidized catalyst system; (3) providing an oxygenate containing feed to the first reactor; and (4) fluidizing the catalyst system with the oxygenate containing feed. |
| US08735638B2 |
Transformation of biomass
A method for processing biomass comprising heating an aqueous slurry comprising biomass, water and a phosphate catalyst in a pressure vessel at a temperature of about 150° C. to about 500° C. to produce a mixture comprising a dispersion of an organic phase and an aqueous phase. |
| US08735634B2 |
Promoter catalyst system with solvent purification
Methods for performing a condensation reaction are disclosed. Specifically, various methods for the production of highly-pure bisphenol-A are disclosed in which an attached promoter ion exchange resin catalyst system is combined with a solvent crystallization step. |
| US08735632B2 |
Compounds
The invention relates to novel polyglycerol based UV-filters as well as to topical compositions comprising such novel polyglycerol based UV-filters. Furthermore, the invention relates to the use of such novel polyglycerol based UV-filters to enhance the solubility of butyl methoxydibenzoylmethane or bis-ethylhexyloxyphenol methoxyphenyl triazine in cosmetic oils. |
| US08735629B2 |
Process for the reduction of a tertiary phosphine oxide to the corresponding tertiary phosphine in the presence of a catalyst and use of a tertiary phosphine for reducing a tertiary phosphine oxide in the presence of a catalyst
A process for the conversion of a tertiary phosphine oxide to the corresponding tertiary phosphine includes reacting the tertiary phosphine oxide with a reducing tertiary phosphine, in the presence of a catalyst that catalyzes the conversion. |
| US08735627B2 |
Intermediate compounds and process for the preparation of fingolimod
The present invention relates to processes for the preparation of (2-Amino-2-[2-(4-octylphenyl)ethyl]propane-1,3-diol hydrochloride (Fingolimod) and pharmaceutically acceptable salts thereof, and intermediates formed in such processes. |
| US08735625B2 |
Dual-acting antihypertensive agents
The invention is directed to compounds of formula I: wherein Ar, r, R3, X, and R5-7 are as defined in the specification, and pharmaceutically acceptable salts thereof. The compounds of formula I have AT1 receptor antagonist activity and neprilysin inhibition activity. The invention is also directed to pharmaceutical compositions comprising such compounds; methods of using such compounds; and a process and intermediates for preparing such compounds. |
| US08735620B2 |
Processes for preparing (E)-styrylbenzylsulfone compounds and uses thereof for treating proliferative disorders
Processes for preparing (E)-2,4,6-(Trimethoxystyryl)-3-O-Phosphate Disodium-4-Methoxybenzyl Sulfones and uses thereof as antiproliferative agents, including, for example, anticancer agents, and as radioprotective and chemoprotective agents. |
| US08735618B2 |
Solvent-free organosilane quaternary ammonium compositions, method of making and use
Non-flammable, VOC-free organosilane quaternary ammonium compositions are provided in the form of pure or substantially pure water-soluble products that have bactericidal, fungicidal and viricidal activity and which are capable of bonding to various surfaces to form durable hydrophobic coatings. The resulting compositions are free of unreacted chloropropyltrialkoxysilanes, alkylamines and organic solvents that would otherwise provide flammable, corrosive, and/or toxic properties thereby inhibiting their safe and effective use in surface care, personal care and coating products. |
| US08735616B2 |
Process for upgrading low value renewable oils
Steps in the processing of oils derived from plants or vegetables include the degumming, deodorizing and bleaching of the oil before it can be used for further applications. By eliminating one or more of these steps from the processing of the oil, followed by hydrogenating the oil to a specified degree of hydrogenation, the resulting upgraded oils can be incorporated into products having commercial applications. The process uses a high shear mixing device and a hydrogenation catalyst. The process can utilize a single or multiple high shear devices, and utilize renewable oils instead of increasingly scarce petroleum based products. The resulting hydrogenated products may then be utilized in a variety of other commercial applications, such as to render cellulosic products water resistant, provide a coating for numerous cellulosic products, adhesive compositions, ink compositions, firelog compositions, drilling muds or asphalt modifiers. |
| US08735615B2 |
Method for extracting unsaponifiables from renewable raw materials
A method for extracting an unsaponifiable fraction from a renewable raw material selected among oilfruits, oleaginous seeds, oleoproteaginous seeds, seed husks, oil-yielding almonds, sprouts, stones and cuticles of fruits, high-fat raw materials from animals, algae, fungus or yeast, includes the following steps: a) dehydrating and packaging the renewable raw material, not resulting in any extraction of the fat; b) reactive crushing of the fatty packaged raw material in the presence of a light alcohol and a catalyst; c) evaporating the light alcohol; d) concentrating the liquid phase such as to obtain a concentrate including the unsaponifiable fraction diluted in fatty acid alkyl esters; e) saponifying the unsaponifiable concentrate; f) extracting the unsaponifiable fraction from the saponified mixture. The use of an unsaponifiable fraction or co-products obtained by implementing the method for preparing a composition such as a cosmetic, drug, food, or food additive or supplement is also described. |
| US08735611B2 |
Crystalline forms of cabazitaxel
The present invention provides crystalline forms, including an anhydrate form, of cabazitaxel and processes for the preparation of these forms, designated as Forms C1, C2, C3, C4, C5, C6, C7, C8, C8b, C9 and C9p. |
| US08735610B2 |
Electroluminescent device
Disclosed are electroluminescent devices that comprise organic layers that contain dibenzofuran compounds. The compounds are suitable components of, for example, blue-emitting, durable, organo-electroluminescent layers. The electroluminescent devices may be employed for full color display panels in, for example, mobile phones, televisions and personal computer screens. |
| US08735607B2 |
Process for the production of alkylene carbonate
The invention relates to a process for the production of an alkylene carbonate by the reaction of an alkylene oxide with carbon dioxide in the presence of a phosphonium catalyst in which process (a) the alkylene oxide, carbon dioxide and phosphonium catalyst are continuously introduced into a reaction zone from which a product stream containing alkylene carbonate and phosphonium catalyst is withdrawn; (b) alkylene carbonate and a stream containing phosphoniura catalyst are separated from the product stream; (c) the alkylene carbonate, separated in step (b), is recovered as product; and (d) the stream containing phosphoniura catalyst, separated in step (b), is recycled to the reaction zone, in which process a treatment of alkylene carbonate and/or catalyst with a sorption agent comprising carbon is carried out. |
| US08735606B2 |
Thiophene-2-carboximidamide based selective neuronal nitric oxide inhibitors
Selective neuronal nitric oxide synthase (nNOS) inhibitor compounds designed with one or more thiophene-2-carboximidamide substituents for improved bioavailability. |
| US08735605B2 |
Heterocyclic quinoid thiophene organic photoelectric material, preparation method and application thereof
A heterocyclic quinoid thiophene organic photoelectric material, which comprises a compound represented by formula (1), in which R1, R2, R5 and R6, which may be identical or different, are H or C1-C20 alkyl or alkoxyl; R3 and R4, which may be identical or different, are C1-C20 alkyl or alkoxyl; a and b, which may be identical or different, are integer of 1-12; X is Si or C. A preparation method of said heterocyclic quinoid thiophene organic photoelectric material and the use thereof are also disclosed. |
| US08735596B2 |
Process for producing crystals of polymorphic 2-(3-cyano-4-isobutyloxyphenyl)-4-methyl-5-thiazolecaboxylic acid by poor-solvent addition method
Disclosed is a process for producing A-form crystals of 2-(3-cyano-4-isobutyloxyphenyl)-4-methyl-5-thiazolecarboxylic acid, comprising: a step of dissolving by heating 2-(3-cyano-4-isobutyloxyphenyl)-4-methyl-5-thiazolecarboxylic acid in one or a plurality of solvents as a good solvent, selected from the group consisting of 1-propanol, 2-propanol, ethanol, and acetone; a step of cooling the solution; and a step of adding to the solution a hydrocarbon solvent as a poor solvent. |
| US08735591B2 |
Organic amine dimmer and method for synthesizing the same
An organic amine dimmer and a method for synthesizing the same are disclosed. The method comprises the following steps: (A) mixing an iron-containing compound (e.g., Fe2O3, FeCl3), a nitrate-containing compound, oxalate acid, 4,4′-trimethylenedipiperidine (TMDP), H3PO4, and 2 to 8 ml of water to form a mixture; (B) heating the mixture and maintaining the mixture at 160° C. or above for a first predetermined time; (C) cooling the mixture; and (D) placing the mixture at room temperature for a second predetermined time, to obtain an organic amine dimmer, wherein Fe(NO3)3 can serve as the iron-containing compound as well as the nitrate-containing compound. |
| US08735585B2 |
Indenopyridine derivatives
Disclosed is a compound of formula (I) and salts thereof. Also disclosed are methods of making the compound of formula (I) and the use of the compound as an intermediate for making pharmaceutically active compounds such as 11-β-hydroxysteroid hydrogenase type 1 (11-β-HSD1) inhibitors. |
| US08735583B2 |
Chiral phosphorus compound
Methods of making a chiral phosphorus compound of formula (X) are disclosed: wherein R1, R2, R3 are chiral or achiral groups selected from the list consisting of substituted or unsubstituted straight-chain, branched-chain or cyclic aliphatic or aromatic groups and in which the pair R1/R2 may be interconnected to form a ring. |
| US08735581B2 |
Organometallic complex, light-emitting element, light-emitting device, and electronic device including the organometallic complex
Provided is a novel organometallic complex which can be synthesized easily and emits phosphorescence, or a compound which emits red phosphorescence. The inventors focused on easy synthesis of an m-aminophenyl pyrazine derivative represented by the following general formula (G0), synthesized an organometallic complex having a structure in which the derivative is coordinated to a Group 9 or Group 10 metal ion, and further synthesized a useful substance which emits red phosphorescence. |
| US08735580B2 |
Method of producing polymeric phenazonium compounds
A process of making a polymeric phenazonium compound having the general formula: wherein R1, R2, R4, R5, R6, R8 and R9 are the same or different, and represent hydrogen, a low alkyl or a substituted aryl, R3 starts as NH2 and is diazotized followed by polymerization, R5 and R8 may alternatively represent monomeric or polymeric phenazonium radicals, R7 is a carbon in the aromatic ring, and wherein RX—N—RY represents a substituted amine, and RX and RY represent any combination of CH3, C2H5, and hydrogen, except that RX and RY cannot both be hydrogen, A is an acid radical, and n is an integer from 2 to 100. The polymeric phenazonium compound is usable in as an additive in a metal plating bath. The method includes the steps of: a) dissolving an effective amount of an amino compound in a formic acid solution; b) adding a nitrite salt to diazotize the amino compound; and c) adding sulfamic acid to neutralize any excess nitrous acid that may be formed in step b), whereby a polymeric phenazonium compound is produced. |
| US08735574B2 |
Methods for synthesizing metal mesoporphyrins
Embodiments describe methods of synthesizing metal mesoporphyrin compounds. In embodiments, a metal mesoporphyrin compound may be formed by hemin transmetallation and subsequent hydrogenation of the tin protoporphyrin IX to form a metal mesoporphyrin. In other embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a protoporphyrin methyl ester from hemin and converting the protoporphyrin methyl ester intermediate to a metal mesoporphyrin compound through metal insertion and hydrogenation. In other embodiments, a metal mesoporphyrin compound may be formed from hemin by a hydrogen-free hydrogenation method to form a mesoporphyrin IX intermediate followed by metal insertion and hydrogenation. In embodiments, a method of synthesizing a metal mesoporphyrin compound comprises forming a mesoporphyrin IX dihydrochloride intermediate compound and converting the mesoporphyrin IX intermediate to a metal mesoporphyrin compound through metal insertion. In embodiments, a metal mesoporphyrin compound may be formed directly from hemin without isolation of any intermediates. |
| US08735570B2 |
Cationic dextran polymer derivatives
Cationic dextran polymer derivatives including an ester-linked amine-containing substituent and an alkyl ester substituent and methods for making such dextran polymer derivatives are disclosed. |
| US08735566B2 |
Bacterially derived intact minicells that encompass plasmid free functional nucleic acid for in vivo delivery to mammalian cells
Intact, bacterially-derived minicells can safely introduce therapeutically effective amounts of plasmid-free functional nucleic acid to target mammalian cells. To this end, functional nucleic acid can be packaged into intact minicells directly, without resort to expression constructs, the expression machinery of the host cell, harsh chemicals or electroporation. |
| US08735565B2 |
Rapid detection of the “high-virulent” ST-17 clone of group B Streptococcus
The present invention relates to polynucleotides enabling the rapid, simple and specific detection of Group B Streptococcus highly-virulent ST-17 clones. The present invention also relates to the polypeptides encoded by the polynucleotides, as well as to antibodies directed or raised against the polypeptides. The present invention also relates to kits and methods for the specific detection of Group B Streptococcus highly-virulent ST-17 clones, using the polynucleotides, the polypeptides or the antibodies according to the invention. |
| US08735560B1 |
Multiple domain lepidopteran active toxin proteins
Novel synthetic Bacillus thuringiensis crystal proteins exhibiting insect inhibitory activity is disclosed. Polynucleotides encoding the crystal protein, transgenic plants and microorganisms that contain the polynucleotides, isolated peptides derived from the crystal protein, and antibodies directed against the crystal protein are also provided. Methods of using the crystal protein and polynucleotides encoding the crystal protein to control Lepidopteran insects are also disclosed. |
| US08735553B1 |
Anti-PD1 antibodies and their use as therapeutics and diagnostics
Provided are antibodies that specifically bind to Programmed Death-1 (PD1, Pdcd-1, or CD279) and inhibit PD1-mediated cellular signaling and activities in immune cells, antibodies binding to a set of amino acid residues required for its ligand binding, and uses of these antibodies to treat or diagnose cancer, infectious diseases or other pathological disorders modulated by PD1-mediated functions. |
| US08735552B2 |
Generation, expression and characterization of the humanized K33N monoclonal antibody
The present invention provides humanized antibodies that immunospecifically recognize human 9 integrin. Some of these antibodies inhibit the biological functions of the 9 integrin, thereby exhibiting therapeutic effects on various disorders or diseases that are associated with 9 integrin, including cancer, e.g., the growth and metastasis of a cancer cell, and inflammatory diseases, e.g., rheumatoid arthritis, osteoarthritis, hepatitis, bronchial asthma, fibrosis, diabetes, arteriosclerosis, multiple sclerosis, granuloma, an inflammatory bowel disease (ulcerative colitis and Crohn's disease), an autoimmune disease, and so forth. |
| US08735548B2 |
Antibodies which bind to SCNN1A/TNFRSF1A fusion proteins and methods of use thereof
The present invention provides fusion proteins expressed by cancer cells, antibodies and other antigen-binding agents that specifically bind to the fusion proteins, and compositions and methods for using the antibodies and other antigen-binding agents to detect, characterize, and treat cancer. |
| US08735547B2 |
Optimized Fc Variants
The present invention relates to Fc variants having decreased affinity for FcγRIIb, methods for their generation, Fc polypeptides comprising optimized Fc variants, and methods for using optimized Fc variants. |
| US08735545B2 |
Fc variants having increased affinity for fcyrllc
The present invention relates to Fc variants having increased affinity for FcγRIIc, methods for their generation, Fc polypeptides comprising optimized Fc variants, and methods for using optimized Fc variants. |
| US08735544B1 |
Value added whole stillage by-products from an ethanol production process
An improved process for obtaining value added by-products from an ethanol production whole stillage is disclosed wherein the whole stillage is mixed with additives to form a nutrition enriched product stream that is subsequently dried to produce a nutrition enriched product having a water content of less than 12% by weight. In a preferred embodiment the whole stillage is obtained from a ethanol production process that has utilized a corn flour as the starting feedstock. The corn flour is then hydrolyzed along with added vitamins and/or nutrients and/or enzymes. The hydrolyzed product is then preferably mixed with a soy hull flour, also preferably having a median particle size of less than about 100 microns, and subjected to conventional fermentation conditions to produce an ethanol containing product. The ethanol-containing product is then distilled to produce an ethanol enriched steam and the separate whole stillage to be used as the feedstock. |
| US08735539B2 |
Relaxin polypeptides comprising non-naturally encoded amino acids
Modified relaxin polypeptides and their uses are provided. In one aspect, the disclosure provides a relaxin polypeptide comprising one or more non-naturally encoded amino acids. The polypeptide may be linked to a linker, polymer, or biologically active molecule. The serum half-life of the relaxin polypeptide may be enhanced relative to the unconjugated form. In another aspect, the disclosure provides methods of treating a patient having a disorder modulated by relaxin. |
| US08735537B2 |
Methods of producing polyanthracene and uses thereof
The present application provides methods of producing polyanthracene including polymerization of anthracene monomers in the presence of oxidants and reaction solvents. The present application further provides polyanthracene produced by methods described herein that has higher solubility in organic solvents and better thermal stability and ablation resistance. |
| US08735534B2 |
Precursor composition for polyimide and use thereof
The present invention provides a precursor composition for polyimides, said composition comprising an amic acid oligomer of formula (1) and a dianhydride derivative with ester (—C(O)OR) and carboxy (—C(O)OH) terminal groups of formula (2): wherein R, G, G1, P, D and m are as defined in the specification. The invention also provides polyimides synthesized from the above-mentioned precursor composition. |
| US08735531B2 |
Diol, and polycarbonate resin or polyester resin
A diol from which a resin material having high processability and a high refractive index can be manufactured, a polycarbonate resin and a polyester resin which is a polymer of the diol, and a molded article and an optical element formed of the polymer. The diol is represented by the general formula (1) shown below; the polycarbonate resin and the polyester resin are polymers thereof; and the molded article and the optical element are formed of the polymers, wherein R1 and R2 each independently denote one of a hydrogen atom and an alkyl group having 1 or more and 6 or less carbon atoms; Q denotes one of an oxyethylene group, a thioethylene group and a single bond. |
| US08735525B2 |
Curable composition
The present invention relates to a curable composition. A curable composition may be provided; which shows excellent processability and workability; which shows excellent light extraction efficiency, crack resistance, hardness, thermal shock resistance and adhesive strength after curing; and which has excellent reliability and long-term reliability under high-temperature and/or high-moisture conditions. Also, turbidity and surface stickiness may be prevented in the cured product. |
| US08735522B2 |
Gold-polymer nanostructure-immobilized scandium catalyst and its use
The present invention provides a Scandium catalyst that can be used in water or water-soluble organic solvent with no leaching of Scandium. Provided is a gold-polymer nanostructure-immobilized Scandium catalyst, which is formed by preparing, in liquid phase, a mixture comprising gold clusters with from 1 to 50 nm of diameter, disulfide monomer, sulfonic acid salt of disulfide and Lewis acid metal compound represented by ScY3, wherein Y is OSO2CF3 etc., and polymerizing the mixture in the presence of a radical polymerization initiator, wherein the disulfide monomer is represented by the formula below: CH2═CH—R1—S—S—R1—CH═CH2 wherein R1 represents a divalent hydrocarbon, which may contain an ether bond, and the sulfonic acid salt of disulfide is represented by the formula below: MO3S—R2—S—S—R2—SO3M wherein R2 represents a divalent hydrocarbon, which may contain an ether bond, and M represents an alkali metal. This catalyst is useful as a catalyst for aldol reactions, cyanolation reactions, allylation reactions, Michael reactions, Mannich reactions, Diels Alder reactions and Friedel Crafts reactions in water or water-soluble organic solvent. |
| US08735518B2 |
Aqueous dispersions of polymers which comprise a fluorescent dye, process for their production and their use for marking materials
Aqueous dispersions of polymers which obtained by free radical suspension polymerization or free radical miniemulsion polymerization of ethylenically unsaturated monomers in an oil-in-water emulsion whose disperse phase comprises at least one fluorescent dye dissolved in at least one ethylenically unsaturated monomer and has an average particle diameter of at least 1μm, in the presence of at least one surface-active compound and at least 0.5% by weight, based on the monomers, of at least one hydrophobic, nonpolymerizable, organic compound, of a hydrophobic polymer of at least one C2- to C6-olefin having a molar mass Mw of up to 10000, of a siloxane having a molar mass Mw of up to 5000 and/or polystyrene having a molar mass Mw of up to 10000, and of the powders obtainable from these polymer dispersions in each case by drying and comprising at least one fluorescent dye for marking of materials. |
| US08735509B2 |
Use of polyorganosiloxanes in the processing and vulcanisation of rubber
The invention relates to the use of polyorganosiloxanes having 3 or more siloxane units, which have one or more organic fractions R1, where R1 has one or more carbon-carbon multiple bonds and at least 4 carbon atoms, and wherein the presence of hydrocarbon fractions having a chain length of 5 to 50 carbon atoms is excluded, as additives in the processing of rubber. The polyorganosiloxanes are used in the processing and vulcanization of rubber in a quantity of 0.1 to 10 phr and incorporated by reaction in same. Said polyorganosiloxanes produce a reduction in the viscosity of the rubber during processing and optionally an improvement in the mechanical properties of the vulcanized rubber. |
| US08735503B2 |
Composition for semiconductive rubber, crosslinked rubber product, and semiconductive parts
A composition for a semiconductive rubber, comprising an epichlorohydrin-based rubber (a), an ethylene oxide-modified (meth)acrylate (b), and at least one kind of a crosslinking agent (c) selected from the group consisting of a sulfur-based crosslinking agent, a quinoxaline-based crosslinking agent and a triazine-based crosslinking agent. |
| US08735502B2 |
Functionalized high vinyl terminated propylene based oligomers
This invention relates to a functionalized co-oligomer having an Mn of 300 to 30,000 g/mol comprising 10 to 90 mol % propylene and 10 to 90 mol % of ethylene, wherein the oligomer has at least X % allyl chain ends, where: 1) X=(−0.94 (mole % ethylene incorporated)+100), when 10 to 60 mole % ethylene is present in the co-oligomer, and 2) X=45, when greater than 60 and less than 70 mole % ethylene is present in the co-oligomer, and 3) X=(1.83*(mole % ethylene incorporated)−83), when 70 to 90 mole % ethylene is present in the co-oligomer. This invention also relates to a functionalized homo-oligomer, comprising propylene, wherein the oligomer has: at least 93% allyl chain ends, an Mn of about 500 to about 20,000 g/mol, an isobutyl chain end to allylic vinyl group ratio of 0.8:1 to 1.2:1.0, and less than 100 ppm aluminum. This invention also relates to a process of making functionalized homo- or co-oligomer, comprising propylene, wherein the productivity is greater than 4500 g/mmol Hf (or Zr)/hour. |
| US08735501B2 |
Composition, method for manufacturing the same, optical element, lens
A composition contains a cycloolefin polymer and a cross-linked structure of a cross-linkable polymer having a specific structure. |
| US08735500B2 |
Hydrocarbon polymer modifiers
A hydrocarbon polymer modifier (HPM) having high softening point and high aromaticity, is an interpolymer of (i) a piperylene component; (ii) an aromatic component; and (iii) a cyclic pentadiene component comprising a dicyclopentadiene fraction (DCPD fraction) and a dimethylcyclopentadiene fraction (MCPD fraction), wherein a weight ratio of the MCPD fraction to the DCPD fraction is from 0.8 to 20, and wherein the MCPD fraction is at least 20 wt % of the cyclic pentadiene component. In a method, the proportions of (i), (ii), (iii), and an optional amylene component are adjusted to control aromaticity, softening point and Mz of the HPM. An elastomeric composition incorporates the HPM. |
| US08735493B2 |
Preparation of organosiloxane polymers
A method of making a polysiloxane containing polymer is described. The method comprises the steps of the polycondensation of a) 100 parts by weight of oligomers comprising non-cyclic siloxane containing oligomers having at least two condensable groups per molecule alone or in a mixture with one or organic oligomers having at least two condensable groups per molecule in the presence of: b) at least 2 parts by weight per 100 parts of (a) of one or more condensation catalysts comprising a Bronsted acid or a Lewis acid c) at least 15 parts by weight per 100 parts of (a) of one or more liquefied gases or a supercritical fluid therefrom. Subsequent to the reaction completion the polysiloxane containing polymer is recovered by expansion of the liquefied gas(es) or supercritical fluid (c). |
| US08735491B2 |
Solvent bondable thermoplastic elastomers
An essentially halogen-free, plasticizer-free thermoplastic elastomer compound is disclosed. The compound has from 10-80 weight percent of a hydrogenated styrene butadiene copolymer having a styrene content of less than 20 weight percent; from 20-90 weight percent of a polyolefin; and less than about 3 weight percent of antioxidant. The compound is capable of being solvent bonded or welded to another thermoplastic material using cyclohexanone alone or with methyl ethyl ketone. The compound is especially useful as medical tubing connected to other parts of medical equipment. The bond strength of the compound to the other thermoplastic material is properly determined only after multiple days of bonding. |
| US08735489B2 |
Resin composite material
A resin composite material including fine graphite particles including plate-like graphite particles, an aromatic vinyl copolymer which is adsorbed on the plate-like graphite particles and which has a vinyl aromatic monomer unit represented by the following formula: —(CH2—CHX)— (X represents a phenyl group, a naphthyl group, an anthracenyl group, or a pyrenyl group, provided that these groups may have substituents); a fibrous inorganic filler; and a resin matrix. |
| US08735487B2 |
Tire components with improved heat transfer
A tire comprising at least one cured rubber component having boron nitride dispersed within a cured rubber matrix. |
| US08735485B2 |
Rubber mixture having improved fatigue strength
The invention relates to a rubber mixture, in particular for pneumatic vehicle tires, more particularly for the inner liner of a pneumatic vehicle tire, seat belts, belts and hoses. The rubber mixture is characterized by the following composition: 30 to 100 phr of at least one halobutyl rubber, 0 to 70 phr of at least one other diene rubber, 5 to 100 phr of at least one dry mixture compound containing at least 25% of at least one delaminated aluminohydrosilicate modification, the delaminated aluminohydrosilicate modification having a two-layer grid, 10 to 100 phr of at least one carbon black with an STSA surface as defined according to ASTM-D 6556 of from 10 to 60 m2/g and a DBP number defined according to ASTM-D 2414 of from 50 to 160 mL/100g, 3 to 20 phr of at least one mineral-oil softener, and other additives. |
| US08735480B2 |
Adhesive composition for tyres, method for producing this composition and method for glueing tyres using this composition
This invention provides a natural solvent-based adhesive composition for tires; a mix to prepare adhesive compositions; a preactivation compound for tires; processes to obtain said compositions or mix; or the use of said compounds in bonding tires; and bonding and preactivation processes for tires. The objects of the invention provide industrial solutions that, while introducing a considerable reduction in environmental impact in their preparation and use, provide better health conditions for the professionals who work in the tire bonding industry. |
| US08735479B2 |
Fluorinated elastic copolymer composition and its cross-linked rubber member
To provide a fluorinated elastic copolymer composition, and a cross-linked rubber member obtained by crosslinking the fluorinated elastic copolymer composition, which is excellent in hot water resistance and steam resistance under severe conditions.A fluorinated elastic copolymer composition, which comprises a fluorinated elastic copolymer and a compound represented by the following formula (1) wherein the compound represented by the following formula (1) is contained in an amount of from 0.1 to 10 parts by mass per 100 parts by mass of the fluorinated elastic copolymer: (RCOO−)nMn+ (1) (wherein R is a C10-30 organic group, n is an integer of 2 or 3, and M is an alkaline earth metal, Zn, Cd, Co, Sn, Cu, Pb, Ni or Al). |
| US08735475B2 |
Inhibitor combination, resin mixture containing same and use of same
The use of a mixture of 5-pyrimidinol derivatives with sterically hindered phenol derivatives for adjusting the reactivity and the gel time of resin mixtures and reactive resin mortars based on radically polymerizable compounds is described. Furthermore, a resin mixture containing the inhibitor combination, a reactive resin mortar containing this resin mixture and two-component mortar systems with the reactive resin mortar according to the invention and a hardener with improved stability in storage and good low-temperature hardening properties are also described. The resin mixture according to the invention is suitable in particular for chemical fastening of construction elements in boreholes in various substrates. |
| US08735470B2 |
Method for fibrillating cellulose, cellulose nanofiber, masterbatch, and resin composition
The present invention provides a method for manufacturing a cellulose nanofiber, characterized by comprising the step of fibrillating cellulose in a polyester based resin, preferably in a polyester based resin having an ester group concentration of 6.0 mmol/g or more and a cellulose nanofiber produced by the manufacturing method concerned. In addition, the present invention provides a masterbatch composition containing the cellulose nanofibers and the polyester based resin. Furthermore, the present invention provides a resin composition containing the masterbatch composition and a diluent resin and a processed product thereof. |
| US08735469B2 |
Resin material and high voltage equipment using the resin material
A resin material of high strength and high voltage equipment capable of improving the reliability by using the resin material, the resin material being a hardened product including fine particles and resin ingredients, in which the fine particles have hydrophobic groups on the surface and have a particle diameter of 200 nm or less, the resin ingredients have hydrophilic groups on the side chains, and the fine particles form a plurality of linear aggregates inside the resin, thereby forming a dendritic structure. |
| US08735467B2 |
Process for producing pigment-containing curable resin solution composition, pigment dispersed liquid, and pigment-containing curable resin solution composition
A process for producing a pigment-containing curable resin solution composition which comprises a pigment and a modified polysiloxane is disclosed. The process comprises the steps of: (a) preparing a pigment-dispersed liquid, wherein a pigment is dispersed in an organic solvent in the presence of a first modified polysiloxane; and (b) mixing the pigment-dispersed liquid with a resin solution which comprises at least a second modified polysiloxane. This process provides a pigment-containing curable resin solution composition with excellent dispersion stability of pigment. |
| US08735462B2 |
Radical-polymerizable resin, radical-polymerizable resin composition, and cured material thereof
Provided is a radical-polymerizable resin capable of giving a cured material which is satisfactorily flexible, can relax stress upon usage as an adhesive, and does not cause disadvantages such as separation at the adhesive interface or breakage of an adherend, which stress occurs between the adhesive and the adherend upon heating or cooling and is caused by difference in coefficient of thermal expansion between them.The radical-polymerizable resin is obtained through cationic polymerization of a compound represented by any of following Formulae (1a) and (1b) and a compound represented by any of following Formulae (2a), (2b), (2c), (2d), (2e), and (2f). The radical-polymerizable resin is liquid at 0 ° C. and has a weight-average molecular weight of 500 or more. Symbols in the formulae are as defined in the description. |
| US08735452B2 |
Treating patients with intravenous ibuprofen
Methods of treating a patient in need thereof, comprising administering to the critically ill patient an intravenous pharmaceutical composition comprising ibuprofen in an amount effective to treat at least one condition in the patient chosen from pain, inflammation, and fever and to provide a clinically relevant effect on mean arterial pressure of the patients during the dosage interval comprising no increase or no statistically significant increase in mean arterial pressure. |
| US08735451B2 |
D-serine transporter inhibitors as pharmaceutical compositions for the treatment of visual system disorders
The present invention relates to pharmaceutical compositions comprising D-serine transporter inhibitors and therapeutic methods using such pharmaceutical compositions in methods for the treatment of visual system disorders and the enhancement of the visual function. |
| US08735443B2 |
Method of treating diabetes-related vascular complications
The method of treating diabetes-related vascular complications includes the treatment of diabetic patients with α-lipoic acid (LA) in order to mitigate the negative impact of diabetes-related vascular dysfunctions upon vascular homeostasis. The treatment method includes the step of administering to the patient an initial dosage of α-lipoic acid believed to be therapeutically effective. The patient's response is then monitored by measuring α-lipoic acid-responsive biomarkers and by performing assays from blood and tissue taken from the patient. |
| US08735435B2 |
CETP inhibitors
Compounds having the structures of Formula I, including pharmaceutically acceptable salts of the compounds, are CETP inhibitors, and are useful for raising HDL-cholesterol, reducing LDL-cholesterol, and for treating or preventing atherosclerosis: In the compounds of Formula I, B or R2 is a phenyl group which has an ortho aryl, heterocyclic, benzoheterocyclic or benzocycloalkyl substituent, and one other position on the 5-membered ring has an aromatic, heterocyclic, cycloalkyl, benzoheterocyclic or benzocycloalkyl substituent connected directly to the ring or attached to the ring through a —CH2—. |
| US08735422B2 |
Cationic pharmaceutically active ingredient containing composition, and methods for manufacturing and using
A cationic pharmaceutically active ingredient containing composition is provided. The composition includes a cationic pharmaceutically active ingredient, a hydrophobic polymer/hydrophilic polymer adduct comprising a poly(vinylpyrrolidone/alkylene) polymer and a polymer comprising carboxylic acid groups, hydroxyl groups, or a mixture of carboxylic acid groups and hydroxyl groups, a compatibilizing amount of a long chain organic acid having a carbon chain of at least 8 carbon atoms, and at least about 50 wt. % water. |
| US08735421B2 |
Imidazoquinolinyl sulfonamides
Imidazoquinolinyl, imidazopyridinyl, and imidazonaphthyridinyl sulfonamide compounds, pharmaceutical compositions containing the compounds, intermediates, and methods of making and methods of use of these compounds as immunomodulators, for inducing cytokine biosynthesis in animals and in the treatment of diseases including viral and neoplastic diseases are disclosed. |
| US08735417B2 |
Aminopyrimidines as Syk inhibitors
The present invention provides novel pyrimidine amines of formula (I) which are potent inhibitors of spleen tyrosine kinase, and are useful in the treatment and prevention of diseases mediated by said enzyme, such as asthma, COPD and rheumatoid arthritis. |
| US08735415B2 |
Acid addition salts of (3,5-Bis trifluoromethyl)-N-[4-methyl-3-(4-pyridin-3yl-pyrimidin-2ylamino)-phenyl]-benzamide
The present invention relates to acid addition salts of the pharmaceutically active compound (3,5-Bistrifluoromethyl)-N-[4-methyl-3-(4-pyridin-3yl-pyrimidin-2ylamino)-phenyl]-benzamide(I): Development Code—AN019 The invention also relates to processes for the preparation these acid addition salts and to their use as anti tumor agent in humans. |
| US08735411B2 |
Macrocyclic benzofused pyrimidine derivatives
Macrocyclic benzofused pyrimidine compounds, compositions comprising such compounds, methods for making the compounds, and methods of treating and preventing the progression of diseases, conditions and disorders using such compounds and compositions are described herein. |
| US08735410B2 |
Quinazoline derivatives as tyrosine kinase inhibitors
The invention concerns quinazoline derivatives of the Formula I, or pharmaceutically acceptable salts thereof: wherein each of R1, R2, R3, R4 and m are as defined in the description; processes for their preparation; pharmaceutical compositions containing them and their use in the manufacture of a medicament for providing an anti-proliferative effect. The quinazoline derivatives of Formula I are expected to be useful in the treatment of diseases such as certain cancers mediated by erbB receptor tyrosine kinases, and, for example, EGFR tyrosine kinase. |
| US08735409B2 |
Quinazoline derivatives
This disclosure concerns novel quinazoline compounds of Formula (I) as defined in the specification and compositions comprising such novel compounds. These compounds are useful anticancer agents, especially in inhibiting the function of the EGF receptor tyrosine kinases, HER1 tyrosine kinase, and HER2 tyrosine kinase. Thus, the disclosure also concerns a method of treating hyperproliferative diseases or conditions, such as various cancers and benign prostate hyperplasia (BPH), by use of these novel compounds or a composition comprising such novel compounds. |
| US08735408B2 |
Solid forms of 3-(4-(aminomethyl)-1-(5-methyl-7H-pyrrolo[2,3-d]pyrimidin-4-yl)piperidine-4-carboxamido)phenyl dimethylcarbamate
Solid forms of 3-(4-(aminomethyl)-1-(5-methyl-7H-pyrrolo[2,3-d]pyrimidin-4-yl)piperidine-4-carboxamido)phenyl dimethylcarbamate and salts thereof are disclosed. Methods of its use to treat diseases and disorders of the eye are also disclosed. |
| US08735406B2 |
8-oxodihydropurine derivative
The present invention provides a compound represented by the formula (1) or a pharmaceutically acceptable salt thereof (wherein W represents a hydrogen atom, a halogen atom, or the others; A represents an alkyl group optionally substituted by aryl group or the others, an aryl group, or the others; and one of X and Y represents a di-substituted alkylaminocarbonyl group, or the others, and the other represents a hydrogen atom, an alkyl group, an alkylcarbonyl group, or the others); a medicament or a pharmaceutical composition for treatment or prophylaxis of FAAH-related diseases such as depression, anxiety disorder or pains, comprising the compound or the like as an active ingredient; a use of the compound or the like; and a method for treatment or prophylaxis using the compound or the like. |
| US08735402B2 |
Cycloalkyloxycarboxylic acid derivatives
The present invention relates to cycloalkyloxycarboxylic acid derivatives of the formula I in which A, R1, R2a, R2b, R2c, R3 and X are as defined in the claims. The compounds of the formula I are suitable, for example, for wound healing. |
| US08735400B2 |
Compositions and methods for inhibition of the JAK pathway
Disclosed are compounds of formula I, compositions containing them, and methods of use for the compounds and compositions in the treatment of conditions in which modulation of the JAK pathway or inhibition of JAK kinases, particularly JAK 2 and JAK3, are therapeutically useful. |
| US08735398B2 |
Hepatitis C virus inhibitors
The present disclosure is generally directed to antiviral compounds, and more specifically directed to compounds which can inhibit the function of the NS5A protein encoded by Hepatitis C virus (HCV), compositions comprising such compounds, and methods for inhibiting the function of the NS5A protein. |
| US08735397B2 |
Method for treating schizophrenia and related diseases
The invention relates to a method for treating schizophrenia and/or related diseases comprising administering lurasidone and a mGluR2 ligand to a mammal in need thereof. |
| US08735395B2 |
Protease inhibitors
Compounds of the formula II: wherein R1 and R2 are independently H, F or CH3; or R1 forms an ethynyl bond and R2 is H or C3-C6 cycloalkyl which is optionally substituted with one or two substituents independently selected from methyl, CF3, OMe or halo; R3 is C1-C3 alkyl or C3-C6 cycloalkyl, either of which is optionally substituted with one or two methyl and/or a fluoro, trifluoromethyl or methoxy, when R3 is C3-C6 cycloalkyl it may alternatively be gem substituted with fluoro; R4 is methyl or fluoro; m is 0, 1 or 2; E is a bond, or thiazolyl, optionally substituted with methyl or fluoro; A1 is CH or N, A2 is CR6R7 or NR6, provided at least one of A1 and A2 comprises N; R6 is H, C1-C4 alkyl, C1-C4 haloalkyl, C1-C3 alkyl-O—C1-C3 alkyl, or when A2 is C, R6 can also be C1-C4alkoxy or F; R7 is H, C1-C4 alkyl or F or a pharmaceutically acceptable salt, N-oxide or hydrate thereof, have utility in the treatment of disorders characterized by inappropriate expression or activation of cathepsin K, such as osteoporosis, osteoarthritis, rheumatoid arthritis or bone metastases. |
| US08735394B2 |
Combinations and modes of administration of therapeutic agents and combination therapy
The present invention provides combination therapy methods of treating proliferative diseases (such as cancer) comprising a first therapy comprising administering to an individual an effective amount of a taxane in a nanoparticle composition, and a second therapy which may include, for example, radiation, surgery, administration of chemotherapeutic agents (such as an anti-VEGF antibody), or combinations thereof. Also provided are methods of administering to an individual a drug taxane in a nanoparticle composition based on a metronomic dosing regime. |
| US08735387B2 |
Oxazolopyrimidines as Edg-1 receptor agonists
The present invention relates to oxazolopyrimidine compounds of the formula I in which A, R1, R2 and R3 are defined as indicated in the claims. The compounds of the formula I modulate the activity of the Edg-1 receptor and in particular are agonists of this receptor, and are useful for the treatment of diseases such as atherosclerosis, heart failure or peripheral arterial occlusive disease, for example. The invention furthermore relates to processes for the preparation of compounds of the formula I, their use, in particular as active ingredients in pharmaceuticals, and pharmaceutical compositions comprising them. |
| US08735384B2 |
Amino heteroaryl compounds as beta-secretase modulators and methods of use
The present invention comprises a new class of compounds useful for the modulation of Beta-secretase enzyme activity and for the treatment of Beta-secretase mediated diseases, including Alzheimer's disease (AD) and related conditions. In one embodiment, the compounds have a general Formula (I); wherein ring A, B1, B2, B3, L, R1, R2, ring Z, m and n of Formula I are defined herein. The invention also includes use of these compounds in pharmaceutical compositions for treatment, prophylactic or therapeutic, of disorders and conditions related to the activity of beta-secretase protein. Such disorders include, for example, Alzheimer's Disease (AD), cognitive deficits, cognitive impairment, schizophrenia and other central nervous system conditions related to and/or caused by the formation and/or deposition of plaque on the brain. The invention also comprises further embodiments of Formula (I), intermediates and processes useful for the preparation of compounds of Formula (I). |
| US08735378B2 |
Fatty acid acetylated salicylates and their uses
The invention relates to Fatty Acid Acetylated Salicylate Derivatives; compositions comprising an effective amount of a Fatty Acid Acetylated Salicylate Derivative; and methods for treating or preventing an inflammatory disorder comprising the administration of an effective amount of a Fatty Acid Acetylated Salicylate Derivative. |
| US08735376B2 |
Carbonate prodrugs and methods of using the same
The present invention provides carbonate prodrugs which comprise a carbonic phosphoric anhydride prodrug moiety attached to the hydroxyl or carboxyl group of a parent drug moiety. The prodrugs may provide improved physicochemical properties over the parent drug. Also provided are methods of treating a disease or condition that is responsive to the parent drug using the carbonate prodrugs, as well as kits and unit dosages. |
| US08735374B2 |
Oral mucoadhesive dosage form
A direct compression formulation suitable for preparing buccal and/or sublingual and dosage forms incorporates a combination of a non-ionic polymeric solubility enhancer, a mucoadhesive polymer, a filler, a disintegrant, and a pharmaceutically active agent. Cannabinoid-cyclodextrin complexes exhibiting an improved property selected from improved stability, higher product yield and improved product uniformity may be obtained by complexing the cannabinoid with the cyclodextrin in a liquid medium containing an antioxidant. To enhance stability, product yield and/or product uniformity, complexing may be done while the liquid medium is in contact with an atmosphere having a very low oxygen content. The resulting complexes may be combined with decomplexing agents and/or dispersed in a matrix material comprised of a hydrogel-forming polymer to provide enhanced absorption of the cannabinoid through oral mucosa and reduced ingestion of the cannabinoid as compared with known commercially available cannabinoid-containing oral dosage forms. |
| US08735370B2 |
Modulation of factor 11 expression
Disclosed herein are antisense compounds and methods for decreasing Factor 11 and treating or preventing thromboembolic complications in an individual in need thereof. Examples of disease conditions that can be ameliorated with the administration of antisense compounds targeted to Factor 11 include thrombosis, embolism, and thromboembolism, such as, deep vein thrombosis, pulmonary embolism, myocardial infarction, and stroke. Antisense compounds targeting Factor 11 can also be used as a prophylactic treatment to prevent individuals at risk for thrombosis and embolism. |
| US08735368B2 |
Antisense oligonucleotides against cPLA2, compositions and uses thereof
Antisense oligonucleotides against cPLA2 are provided, which are capable of inhibiting cPLA2 expression as well as superoxide production, especially in phagocytes. These antisense oligonucleotides are powerful agents for the treatment of inflammatory conditions, in particular arthritis, as well as in neurodegenerative diseases. The antisense oligonucleotides or compositions comprising the same may be used in methods of treatment of such diseases. |
| US08735367B2 |
Small molecule-dependent split aptamer ligation
Methods, assays, and products for the detection of small molecules are provided. In one aspect, for example, a method of detecting a small molecule in a sample can include reacting together a first half of a DNA split aptamer having a first reactive group coupled thereto, a second half of a DNA split aptamer having a second reactive group coupled thereto, where the DNA split aptamer is selective for the small molecule, and a sample containing the small molecule. The first half and the second half bind to the small molecule and the first reactive group and the second reactive group react to form an aptamer ligation product of the first half and the second half. The method can also include assaying for the aptamer ligation product in order to detect the small molecule presence in the sample. |
| US08735362B2 |
Insecticidal compounds based on isoxazoline derivatives
The present invention relates to compounds of formula (I): Wherein A1, A2, A3, A4, G1, L, Y1, Y2, Y3, Y4, R1, R2, R3 and R4 are as defined in claim 1; or a salt or N-oxide thereof. Furthermore, the present invention relates to intermediates for preparing compounds of formula (I), to compositions comprising them and to methods of using them to combat and control insect, acarine, nematode and mollusc pests. |
| US08735358B2 |
Methods for treating cancer by regulation of tumor necrosis factor-alpha
The present invention relates to compositions and methods relating to an interleukin18-inducible cytokine termed tumor necrosis factor-alpha inducing factor (TAIF) or interleukin-32 (IL-32). In particular, the present invention provides compositions and methods for treating autoimmune diseases and cancer, in part by regulation of tumor necrosis factor-alpha expression. |
| US08735357B2 |
Method of inducing antigen-specific T cells
The present invention provides a method for inducing antigen-specific T cells in a patient comprising administering to said patient in need thereof composition (a) which comprises an antigen protein or an antigen peptide as an active ingredient and composition (b) which comprises a non-specific immunopotentiator as an active ingredient, wherein composition (b) is administered in advance and then composition (a) is administered, as well as related pharmaceutical compositions. |
| US08735356B2 |
Anticonvulsant combination therapy
A pharmaceutical composition comprising a Compound (a) of a class of peptide Compounds and at least one further Compound (b) for the prevention, alleviation and/or treatment of epileptic seizures. |
| US08735354B2 |
Endothelium mimicking nanomatrix
Disclosed herein are peptide amphiphiles for use in producing a natural endothelium mimicking nanomatrix. The disclosed natural endothelium mimicking nanomatrix can be used to coat medical devices such as vascular stents to promote endothelializaiton and inhibit restenosis and thrombosis. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention. |
| US08735352B2 |
Adsorbent for blood coagulation factor or cell adhesion factor and method for purifying the factor
An objective of the invention is to provide an adsorbent allowing purification of a blood coagulation factor or a cell adhesion factor under mild conditions, according to simple procedures, and at a low cost and safely while having a high affinity and a high resistance to deterioration, and a method for purifying the blood coagulation factor or the cell adhesion factor; a solution is to apply a polypeptide having peptide fragments represented by formula (1) as the adsorbent for the blood coagulation factor or the cell adhesion factor, and to purify the blood coagulation factor or the cell adhesion factor using the adsorbent: -(Pro-Hyp-Gly)n- Wherein, in formula (1), n is an integer from 2 to 9,000. |
| US08735349B2 |
Method for improving glucose tolerance in a diabetes type 2 patient of younger than 50 years and having postprandial plasma glucose concentration of at least 14 mmol/L
The present invention refers to a pharmaceutical combination for use in inducing weight loss in diabetes type 2 patients or/and for preventing weight gain in diabetes type 2 patients. |
| US08735347B2 |
Regulation of energy metabolism and obesity by modulating B cell activating factor (BAFF, BLYS) or BAFF signaling
Provided herein are methods and compositions for modulating energy metabolism and weight in mammals, in particular by modulating thermogenesis associated with brown fat, including thermogenesis by brown fat or brown fat cells, adaptive thermogenesis by brown fat or brown fat cells, thermogenic capacity of brown fat or brown fat cells, or a combination thereof. More specifically, methods and compositions provided herein for treating or preventing obesity, or methods and compositions for identifying compounds effective for treating or preventing obesity are taught in connection with ligands such as B-cell activating factor (BAFF) and a proliferation-inducing ligand (APRIL), their receptors, and molecules that modulate the interactions between the ligands and receptors. |
| US08735346B2 |
HCV-derived polypeptides and uses thereof
The present invention relates to Hepatitis C virus (HCV)-derived polypeptides and nucleic acid molecules encoding same which advantageously comprises a cd81-binding region. In this connection, the present invention specifically relates to the use of the polypeptides or nucleic acid molecules in compositions and methods for the prevention, the treatment and the diagnosis of HCV infections. |
| US08735339B2 |
Liquid composition comprising ethylenediamine disuccinic acid salt
A liquid composition comprising 1-hydroxyethylidene-1,1-diphosphonic acid and a salt of ethylenediamine disuccinic acid which salt includes a counterion selected from 5 potassium, rubidium, caesium a substituted ammonium ion or mixtures thereof. |
| US08735332B2 |
Use of pyroglutamic acid esters as gas hydrate inhibitors with improved biodegradability
A method for preventing the formation of gas hydrates in an aqueous phase by adding esters of pyroglutamic acid in the quantities of from 0.01 to 2% by weight. The esters of pyroglutamic acid produced by esterifying at least one alcohols, comprising from 1 to 100 hydroxyl groups with pyroglutamic acid and/or glutamic acid, wherein the alcohol has no more than one ester group or no more than one carboxylic acid group. |
| US08735331B2 |
Display library for antibody selection
Synthetic antibody display library containing human germline antibody molecules with variation in VH CDR3 and VL CDR3 and at position 52 of VH CDR2, for screening and selection of antibody molecules specific for antigens of interest. |
| US08735327B2 |
Combinatorial DNA taggants and methods of preparation and use thereof
DNA taggants in which the nucleotide sequences are defined according to combinatorial mathematical principles. Methods of defining nucleotide sequences of the combinatorial DNA taggants, and using such taggants for authentication and tracking and tracing an object or process are also disclosed. |
| US08735326B2 |
Methods of forming superconductor circuits
Methods of forming superconducting devices are disclosed. In one embodiment, the method can comprise depositing a protective barrier layer over a superconducting material layer, curing the protective barrier layer, depositing a photoresist material layer over the protective barrier layer and irradiating and developing the photoresist material layer to form an opening pattern in the photoresist material layer. The method can further comprise etching the protective barrier layer to form openings in the protective barrier layer based on the opening pattern, etching the superconductor material layer based on the openings in the protective barrier layer to form openings in the superconductor material layer that define a first set of superconductor material raised portins and stripping the photoresist material layer and the protective barrier layer. |
| US08735322B2 |
Herbicides
Cyclohexanedione compounds, which are suitable for use as herbicides. |
| US08735315B2 |
Isoparaffin-Olefin alkylation
A composition comprising a base component and a polymer, and a method of making said composition, are disclosed. The composition thereby obtained is then used as a catalyst for isoparaffin-olefin alkylation. |
| US08735310B2 |
Method of regenerating lower hydrocarbon aromatizing catalyst
To improve stability of catalytic performance, an aromatizing catalyst for converting lower hydrocarbons into aromatic compounds is regenerated. A regeneration process of the aromatizing catalyst according to the present invention includes the steps of: (a) reacting the aromatizing catalyst with a hydrogen gas in an atmosphere containing the hydrogen gas after using the aromatizing catalyst in an aromatizing reaction for converting lower hydrocarbons into aromatic compounds; (b) decreasing a temperature of the atmosphere containing the hydrogen gas reacted with the aromatizing catalyst, by supplying one of an inert gas and a reducing gas to the atmosphere; (c) reacting the aromatizing catalyst reacted with this inert gas, with an oxidizing gas; and (d) reacting the aromatizing catalyst reacted with the oxidizing gas, with a reducing gas. |
| US08735309B2 |
Mullite-based sintered body, circuit board using same and probe card
A mullite-based body including mullite, alumina, and titanium manganese oxide is disclosed. The mullite-based sintered body includes mullite of 79.3 to 85.2 mass %, alumina of 14.2 to 19.8 mass % and MnTiO3 of 0.6 to 1.1 mass %. The mullite-based sintered body has a relative density of 96% or higher. A circuit board and a probe card are also disclosed. The circuit board includes the mullite-based sintered body. The probe card includes the wiring substrate; a surface wiring layer on a surface of the wiring substrate; and a measuring terminal electrically coupled to the surface wiring layers for measuring the electrical characteristics of an electric circuit. |
| US08735307B2 |
Filler paste, coating painting and composite for coating wooden poles
It is an object of the invention to provide a number of coatings for protection of wooden poles including filler paste, coating paints and glass fiber-polyester resin based composites which may be applied to wooden poles in the field. These coatings contain different anti-flame and antifungal additives. |
| US08735305B2 |
Methods of forming fluorinated hafnium oxide gate dielectrics by atomic layer deposition
In some embodiments, the present invention discloses a gate dielectric deposition process, including depositing a fluorinated hafnium oxide by an ALD process utilizing a fluorinated hafnium precursor and an oxidant. A two-step ALD deposition process can be used, including a fluorinated hafnium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide high dielectric constant, high density, large bandgap and good thermal stability. Fluorinated hafnium oxide can passivate interface states and bulk traps in the hafnium oxide, for example, by forming Si—F or Hf—F bonds, which can improve the reliability of the hafnium oxide gate dielectrics. |
| US08735304B2 |
Film forming method, film forming apparatus, and storage medium
A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure. |
| US08735303B2 |
Methods of forming PEET devices with different structures and performance characteristics
One illustrative method disclosed herein includes forming a first recess in a first active region of a substrate, forming a first layer of channel semiconductor material for a first PFET transistor in the first recess, performing a first thermal oxidation process to form a first protective layer on the first layer of channel semiconductor material, forming a second recess in the second active region of the semiconducting substrate, forming a second layer of channel semiconductor material for the second PFET transistor in the second recess and performing a second thermal oxidation process to form a second protective layer on the second layer of channel semiconductor material. |
| US08735301B2 |
Method for manufacturing semiconductor integrated circuit
A method for manufacturing a semiconductor integrated circuit includes providing a substrate having at least a metal hard mask formed thereon. Subsequently a patterning step is performed to the metal hard mask to form a patterned metal hard mask and followed by performing a H2O plasma treatment to the patterned metal hard mask. |
| US08735297B2 |
Reverse optical proximity correction method
A method for fabricating an anti-fuse memory cell having a semiconductor structure with a minimized area. The method includes providing a reference pattern for the semiconductor structure, and applying a reverse OPC technique that includes inverting selected corners of the reference pattern. The reverse OPC technique uses photolithographic distortions to provide a resulting fabricated pattern that is intentionally distorted relative to the reference pattern. By inverting corners of a geometric reference pattern, the resulting distorted pattern will have an area that is reduced relative to the original reference pattern. This technique is advantageous for reducing the area of a selected region of a semiconductor structure which may otherwise not be possible through normal design parameters. |
| US08735294B2 |
Method for fabricating a vertical LDMOS device
A vertically arranged laterally diffused metal-oxide-semiconductor (LDMOS) device includes a trench extending into a semiconductor body toward a semiconductor substrate. The trench includes sidewalls, a bottom portion connecting the sidewalls, a dielectric material lining the trench and a diffusion agent layer lining the dielectric material. A lightly doped drain region adjoins the trench and extends laterally around the sidewalls from the diffusion agent layer into the semiconductor body. In one implementation, a method for fabricating a vertically arranged LDMOS device includes forming a trench extending into a semiconductor body toward a semiconductor substrate, the trench including sidewalls, a bottom portion connecting the sidewalls, a dielectric material lining the trench and a diffusion agent layer lining the dielectric material. The method further includes diffusing impurities from the diffusion agent layer through the dielectric material to form a lightly doped drain region extending laterally around the sidewalls into the semiconductor body. |
| US08735293B2 |
Chemical mechanical polishing composition and methods relating thereto
A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of ≦50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12. |
| US08735292B2 |
Semiconductor processing methods
Some embodiments include methods in which insulative material is simultaneously deposited across both a front side of a semiconductor substrate, and across a back side of the substrate. Subsequently, openings may be etched through the insulative material across the front side, and the substrate may then be dipped within a plating bath to grow conductive contact regions within the openings. The insulative material across the back side may protect the back side from being plated during the growth of the conductive contact regions over the front side. In some embodiments, plasma-enhanced atomic layer deposition may be utilized for the deposition, and may be conducted at a temperature suitable to anneal passivation materials so that such annealing occurs simultaneously with the plasma-enhanced atomic layer deposition. |
| US08735283B2 |
Method for forming small dimension openings in the organic masking layer of tri-layer lithography
A method for forming small dimension openings in the organic masking layer of tri-layer lithography. The method includes forming an organic polymer layer over a semiconductor substrate; forming a silicon containing antireflective coating on the organic polymer layer; forming a patterned photoresist layer on the antireflective coating, the patterned photoresist layer having an opening therein; performing a first reactive ion etch to transfer the pattern of the opening into the antireflective coating to form a trench in the antireflective coating, the organic polymer layer exposed in a bottom of the trench; and performing a second reactive ion etch to extend the trench into the organic polymer layer, the second reactive ion etch forming a polymer layer on sidewalls of the trench, the second reactive ion etch containing a species derived from a gaseous hydrocarbon. |
| US08735280B1 |
Method of semiconductor integrated circuit fabrication
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate. A conductive layer is deposited on the substrate. A patterned hard mask is formed on the conductive layer and then a patterned photoresist is formed on the patterned hard mask and the conductive layer. A local metal catalyst layer is formed on the conductive layer in the openings of the patterned photoresist. Carbon nanotubes (CNTs) are grown from the local metal catalyst layer. The conductive layer is etched by using the CNTs and the patterned hard mask as etching mask to form metal features. An inter-level dielectric (ILD) layer is deposited between metal features. |
| US08735279B2 |
Air-dielectric for subtractive etch line and via metallization
A method and structure is disclosed whereby multiple interconnect layers having effective air gaps positioned in regions most susceptible to capacitive coupling can be formed. The method includes providing a layer of conductive features, the layer including at least two line members disposed on a substrate and spaced from one another by less than or equal to an effective distance, and at least one such line member also having a via member extending away from the substrate, depositing a poorly conformal dielectric coating to form an air gap between such line members, and exposing a top end of the via. |
| US08735277B2 |
Methods for producing an ultrathin semiconductor circuit
The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved. |
| US08735275B2 |
Semiconductor device and method of manufacturing the same
After a plurality of pads (2) are formed on an insulation film (1), a passivation film (3) is formed on the entire surface thereof, and opening parts (3a) which exposes all the pads (2) are formed in the passivation film (3). Next, another passivation film is formed on the entire surface and, for each of the pads (2), an opening part is formed in this passivation film to expose the central portion of the pad (2). According to the above method, the probing test can be performed with the opening parts (3a) formed in the passivation film (3). Performing the probing test in such a state increases the probability that the probe contacts the pad (2) since the entire surface of the pad (2) is exposed, thereby providing the test with a higher accuracy. Thus, the pad can be miniaturized and/or the pitch can be narrowed without requiring a higher accuracy of the probe. |
| US08735274B2 |
Manufacture method for semiconductor device with bristled conductive nanotubes
Electrodes formed in a partial surface area of a semiconductor substrate and distal ends of conductive nanotubes bristled on a surface of a growth substrate, are bombarded with rare gas plasma. The distal ends of the conductive nanotubes bombarded with the rare gas plasma are brought into contact with the electrodes bombarded with the rare gas plasma to fix the conductive nanotubes to the electrodes. The growth substrate is separated from the semiconductor substrate in such a manner that the conductive nanotubes fixed to the electrodes remain on the electrodes formed on the semiconductor substrate. |
| US08735273B2 |
Forming wafer-level chip scale package structures with reduced number of seed layers
A method includes forming a passivation layer over a metal pad, which is overlying a semiconductor substrate. A first opening is formed in the passivation layer, with a portion of the metal pad exposed through the first opening. A seed layer is formed over the passivation layer and to electrically coupled to the metal pad. The seed layer further includes a portion over the passivation layer. A first mask is formed over the seed layer, wherein the first mask has a second opening directly over at least a portion of the metal pad. A PPI is formed over the seed layer and in the second opening. A second mask is formed over the first mask, with a third opening formed in the second mask. A portion of a metal bump is formed in the third opening. After the step of forming the portion of the metal bump, the first and the second masks are removed. |
| US08735272B2 |
Integrated circuit having a replacement gate structure and method for fabricating the same
A method for fabricating an integrated circuit includes forming a temporary gate structure on a semiconductor substrate. The temporary gate structure includes a temporary gate material disposed between two spacer structures. The method further includes forming a first directional silicon nitride liner overlying the temporary gate structure and the semiconductor substrate, etching the first directional silicon nitride liner overlying the temporary gate structure and the temporary gate material to form a trench between the spacer structures, while leaving the directional silicon nitride liner overlying the semiconductor substrate in place, and forming a replacement metal gate structure in the trench. An integrated circuit includes a replacement metal gate structure overlying a semiconductor substrate, a silicide region overlying the semiconductor substrate and positioned adjacent the replacement gate structure; a directional silicon nitride liner overlying a portion of the replacement gate structure; and a contact plug in electrical communication with the silicide region. |
| US08735266B2 |
Mechanisms for forming ultra shallow junction
A fin field-effect transistor (FinFET) includes a substrate and a fin structure over the substrate. The fin structure comprises a lightly doped source and drain (LDD) region uniformly beneath a top surface and sidewall surfaces of the fin structure, the LDD region having a depth less than about 25 nm. Another FinFET includes a substrate and a fin structure over the substrate. The fin structure comprises a lightly doped source and drain (LDD) region, and a top surface of the fin structure has a different crystal structure from a sidewall surface of the fin structure. A method of making a FinFET includes forming a fin structure on a substrate. The method further includes performing a pulsed plasma doping on the fin structure to form lightly doped drain (LDD) regions in the fin structure. |
| US08735264B2 |
Temporary adhesive composition and method for manufacturing thin wafer using the same
The present invention is a temporary adhesive composition comprising: (A) non-aromatic saturated hydrocarbon group-containing organopolysiloxane; (B) an antioxidant; and (C) an organic solvent, wherein the component (A) corresponds to 100 parts by mass, the component (B) corresponds to 0.5 to 5 parts by mass, and the component (C) corresponds to 10 to 1000 parts by mass. There can be provided a temporary adhesive composition that has excellent thermal stability while maintaining solvent resistance and a method for manufacturing a thin wafer using this. |
| US08735258B2 |
Integrated circuit resistor fabrication with dummy gate removal
Methods of fabricating a semiconductor device including a metal gate transistor and a resistor are provided. A method includes providing a substrate including a transistor device region and an isolation region, forming a dummy gate over the transistor device region and a resistor over the isolation region, and implanting the resistor with a dopant. The method further includes wet etching the dummy gate to remove the dummy gate, and then forming a metal gate over the transistor device region to replace the dummy gate. |
| US08735254B2 |
Manufacture method of a high voltage MOS semiconductor device
A semiconductor device has: a low concentration drain region creeping under a gate electrode of a MIS type transistor; a high concentration drain region having an impurity concentration higher than the low concentration drain region and formed in the low concentration drain region spaced apart from the gate electrode; and an opposite conductivity type region of a conductivity type opposite to the drain region formed in the low concentration drain region on a surface area between the high concentration drain region and the gate electrode, the opposite conductivity type region and low concentration drain region forming a pn junction. |
| US08735248B2 |
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device is provided. The method includes providing a substrate having a protruding channel region, forming a gate insulation layer surrounding the protruding channel region, forming a sacrificial layer having an etch selectivity varying in a thickness direction of the sacrificial layer, on the gate insulation layer, and performing a gate-last process to form a gate electrode on the gate insulation layer in place of the sacrificial layer. |
| US08735246B2 |
Method for manufacturing nonvolatile semiconductor memory device
According to one embodiment, a method is disclosed for manufacturing nonvolatile semiconductor memory device including forming a stacked body by alternately stacking an electrode layer and a layer-to-be-etched, and forming an oxidized layer between the layer-to-be-etched provided at least in any side of an upper side and a lower side of the electrode layer and the electrode layer. The method can include forming a groove which passes through the stacked body. The method can include embedding an insulating body within the groove. The method can include forming a hole which passes through the stacked body. The method can include selectively removing the layer-to-be-etched via the hole. The method can include forming a charge storage layer in an inner side of the hole. The method can include forming a channel body layer in an inner side of the charge storage layer. |
| US08735245B2 |
Metal oxide resistive switching memory and method for manufacturing same
The present disclosure relates to the microelectronics field, and particularly, to a metal oxide resistive switching memory and a method for manufacturing the same. The method may comprise: forming a W-plug lower electrode above a MOS device; sequentially forming a cap layer, a first dielectric layer, and an etching block layer on the W-plug lower electrode; etching the etching block layer, the first dielectric layer, and the cap layer to form a groove for a first level of metal wiring; sequentially forming a metal oxide layer, an upper electrode layer, and a composite layer of a diffusion block layer/a seed copper layer/a plated copper layer in the groove for the first level of metal wiring; patterning the upper electrode layer and the composite layer by CMP, to form a memory cell and the first level of metal wiring in the groove in the first dielectric layer; and performing subsequent processes to complete the metal oxide resistive switching memory. According to the present disclosure, the manufacture process can be simplified, without incorporating additional exposure steps in the standard process, resulting in advantages such as reduced cost. |
| US08735237B2 |
Method for increasing penetration depth of drain and source implantation species for a given gate height
The thickness of drain and source areas may be reduced by a cavity etch used for refilling the cavities with an appropriate semiconductor material, wherein, prior to the epitaxial growth, an implantation process may be performed so as to allow the formation of deep drain and source areas without contributing to unwanted channel doping for a given critical gate height. In other cases, the effective ion blocking length of the gate electrode structure may be enhanced by performing a tilted implantation step for incorporating deep drain and source regions. |
| US08735229B2 |
Method of manufacturing ZnO-based thin film transistor
A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration. |
| US08735228B2 |
Trench isolation MOS P-N junction diode device and method for manufacturing the same
A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time. |
| US08735225B2 |
Method and system for packaging MEMS devices with glass seal
Methods and systems for packaging MEMS devices such as interferometric modulator arrays are disclosed. One embodiment of a MEMS device package structure includes a seal with a chemically reactant getter. Another embodiment of a MEMS device package comprises a primary seal with a getter, and a secondary seal proximate an outer periphery of the primary seal. Yet another embodiment of a MEMS device package comprises a getter positioned inside the MEMS device package and proximate an inner periphery of the package seal. |
| US08735224B2 |
Integrated circuit packaging system with routed circuit lead array and method of manufacture thereof
A method of manufacture of an integrated circuit packaging system includes: providing a terminal having a top with a depression; applying a dielectric material in the depression, the dielectric material having a gap formed therein and exposing a portion of the top therefrom; forming a trace within the gap and in direct contact with the top, the trace extending laterally over an upper surface of the dielectric material; and connecting an integrated circuit to the terminal through the trace. |
| US08735222B2 |
Semiconductor device and method of manufacturing the same
In regard to a semiconductor device having a multilayered wiring board where a semiconductor chip is embedded inside, a technology which allows the multilayered wiring board to be made thinner is provided. A feature of the present invention is that, in a semiconductor device where bump electrodes are formed over a main surface (element forming surface) of a semiconductor chip embedded in a chip-embedded wiring board, an insulating film is formed over a back surface (a surface on the side opposite to the main surface) of the semiconductor chip. As a result, it becomes unnecessary to form a prepreg over the back surface of the semiconductor chip. Therefore, an effect of thinning the chip-embedded wiring board in which the semiconductor chip is embedded is obtained. |
| US08735221B2 |
Stacked package, method of fabricating stacked package, and method of mounting stacked package fabricated by the method
Provided are a stacked package, method of fabricating a stacked package, and method of mounting a stacked package. A method includes providing an upper semiconductor package including an upper package substrate, upper semiconductor chips formed on a top surface of the upper package substrate, and first solders formed on a bottom surface of the upper package substrate and having a first melting temperature, providing a lower semiconductor package including a lower package substrate, lower semiconductor chips formed on a top surface of the lower package substrate, and solder paste nodes formed on the top surface of the lower package substrate and having a second melting temperature lower than the first melting temperature, and forming inter-package bonding units by attaching respective first solders and solder paste nodes to each other by performing annealing at a temperature higher than the second melting temperature and lower than the first melting temperature. |
| US08735218B2 |
Method and apparatus for manufacturing an electronic assembly, electronic assembly manufactured with the method or in the apparatus
A method of producing an electronic module with at least one electronic component and one carrier. A structure is provided on the carrier so that the electronic component can take a desired target position relative to the structure. The structure is coated with a liquid meniscus suitable for receiving the electronic component. Multiple electronic components are provided at a delivery point for the electronic components. The carrier, with the structure, is moved nearby and opposite to the delivery point, where the delivery point delivers one of the electronic components without contact, while the structure on the carrier is moving near the delivery point, so that after a phase of free movement the electronic component at least partly touches the material, and the carrier, with the structure, is moved to a downstream processing point, while the electronic component aligns itself to the structure on the liquid meniscus. |
| US08735215B2 |
Method of manufacturing variable resistance memory device
An example embodiment relates to a method including forming a bottom electrode and an insulating layer on a substrate, the insulating layer defining a first opening that exposes a portion of the bottom electrode. The method includes forming a variable resistance material pattern, including a plurality of elements, to fill the first opening. The variable resistance material pattern may be doped with a dopant that includes at least one of the plurality of elements in the variable resistance material pattern. The method includes forming a top electrode on the variable resistance material pattern. |
| US08735214B2 |
Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films
This invention relates to a method for producing group IB-IIIA-VIA quaternary or higher alloy semiconductor films wherein the method comprises the steps of (i) providing a metal film comprising a mixture of group IB and group IIIA metals; (ii) heat treating the metal film in the presence of a source of a first group VIA element (said first group VIA element hereinafter being referred to as VIA1) under conditions to form a first film comprising a mixture of at least one binary alloy selected from the group consisting of a group IB-VIA1 alloy and a group IIIA-VIA1 alloy and at least one group IB-IIIA-VIA1 ternary alloy (iii) optionally heat treating the first film in the presence of a source of a second group VIA element (said second group VI element hereinafter being referred to as VIA2) under conditions to convert the first film into a second film comprising at least one alloy selected from the group consisting of a group IB-VIA1-VIA2 alloy and a group IIIA-VIA1-VIA2 alloy; and the at least one group IB-III-VIA1 ternary alloy of step (ii); (iv) heat treating either the first film or second film to form a group IB-IIIA-VIA quaternary or higher alloy semiconductor film. |
| US08735213B2 |
Electrode, photoelectric conversion device using the electrode, and manufacturing method thereof
A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained. |
| US08735211B2 |
Resistive RAM devices and methods
The present disclosure includes a high density resistive random access memory (RRAM) device, as well as methods of fabricating a high density RRAM device. One method of forming an RRAM device includes forming a resistive element having a metal-metal oxide interface. Forming the resistive element includes forming an insulative material over the first electrode, and forming a via in the insulative material. The via is conformally filled with a metal material, and the metal material is planarized to within the via. A portion of the metal material within the via is selectively treated to create a metal-metal oxide interface within the via. A second electrode is formed over the resistive element. |
| US08735208B2 |
Method for forming a back-side illuminated image sensor
A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) forming, from the front surface of the substrate, areas of same conductivity type as the substrate but of higher doping level, extending deep under the front surface, these areas being bordered with insulating regions orthogonal to the front surface; b) thinning the substrate from the rear surface to the vicinity of these areas and all the way to the insulating regions; c) partially hollowing out the insulating regions on the rear to surface side; and d) performing a laser surface anneal of the rear surface of the substrate. |
| US08735207B2 |
Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside. |
| US08735198B2 |
Electromechanical sensor apparatus and methods with multisensing aspects
One embodiment of the present application includes a multisensor assembly. This assembly has an electromechanical motion sensor member defined with one wafer layer, a first sensor carried with a first one or two or more other wafer layers, and a second sensor carried with a second one of the other wafer layers. The one wafer layer is positioned between the other wafer layers to correspondingly enclose the sensor member within a cavity of the assembly. |
| US08735195B2 |
Method of manufacturing a zinc oxide (ZnO) based semiconductor device including performing a heat treatment of a contact metal layer on a p-type ZnO semiconductor layer in a reductive gas atmosphere
Disclosed is a method of manufacturing a ZnO-based semiconductor device having at least p-type ZnO-based semiconductor layer, which includes a step of forming a contact metal layer on the p-type ZnO-based semiconductor layer wherein the contact metal layer contains at least one of Ni and Cu; and a step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer including elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the contact metal layer. |
| US08735194B2 |
Method of manufacturing display apparatus
Provided is a method of manufacturing a display apparatus, including forming a drive circuit and a light-emitting portion on a substrate in which the forming the light-emitting portion includes forming a transparent anode electrode for applying a charge to an emission layer, forming a first coating layer and a second coating layer on the transparent anode electrode, removing the first coating layer by etching using the second coating layer as a mask, and forming a layer including the emission layer on a part of the transparent anode electrode from which the first coating layer is removed. A surface of the transparent anode electrode becomes as clean as a surface cleaned with ultraviolet irradiation. |
| US08735193B2 |
Semiconductor light sources, systems, and methods
A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes forming a lower cladding layer on a substrate, forming an active layer on the lower cladding layer such that the active layer has a quantum well of thirty percent indium, forming an upper cladding layer on the active layer, and forming a metal cap on the upper cladding layer. |
| US08735190B2 |
Batwing LED with remote phosphor configuration
A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens board includes a plurality of microlenses each corresponding to one of the die regions, and at each one of the die regions the glue provides an air-tight encapsulation of one of the light-emitting devices by a respective one of the microlenses. Further, phosphor is included as a part of the lens board. |
| US08735188B2 |
Apparatus for atomic layer deposition with sloped purge injection nozzle structure
An atomic layer deposition apparatus and a sealing method of an organic light emitting device using the same are disclosed. In one embodiment, the atomic layer deposition apparatus improves a structure of the purge gas injection nozzle so as to increase the exhaust efficiency of the purge gas in an atomic layer deposition process, which increases a speed of a purge process. As a result, it is possible to improve a deposition speed and a quality of a sealing film when a sealing process for sealing the organic light emitting device is implemented by using the atomic layer deposition. |
| US08735185B2 |
Light emitting device and fabrication method thereof
The present invention relates to a method of fabricating a patterned substrate for fabricating a light emitting diode (LED), the method including forming an aluminum layer on a substrate, forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer, partially etching a surface of the substrate using the aluminum layer with the large number of the holes as a shadow mask, thereby forming patterns, and removing the aluminum layer from the substrate. |
| US08735184B2 |
Equalization in proximity communication
A device includes a semiconductor die having a surface, a plurality of proximity connectors proximate to the surface, and a circuit coupled to at least one of the plurality of proximity connectors. The semiconductor die is configured to communicate voltage-mode signals through capacitive coupling using one or more of the plurality of proximity connectors. The circuit also includes a filter with a capacitive-summing junction to equalize the signals. |
| US08735181B2 |
Manufacturing system for semiconductor device capable of controlling variation in electrical property of element in wafer surface and method for manufacturing the semiconductor device
A measuring device measures a gate length of a plurality of gate electrodes formed on a wafer. A calculation device calculates data of an ion implantation dosage for making uniform a threshold voltage in a wafer surface on the basis of distribution of the gate length in a wafer surface measured by the measuring device. The ion implantation device implants ions into the wafer on the basis of the data of the ion implantation dosage calculated by the calculation device. |
| US08735179B2 |
Magnetic tunnel junction device and fabrication
A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes forming a top electrode layer over an MTJ structure. The top electrode layer includes a first nitrified metal. |
| US08735178B2 |
Withanolides, probes and binding targets and methods of use thereof
Novel withanolide chemical genetic probes identify the in vivo binding target of withaferin A, which is the intermediate filament type III protein vimentin. In addition, a withanolide-based small molecule screening method screens drug candidates that target intermediate filament type III proteins. The method includes introducing a tagged linker covalently bonded to the withanolide molecule to form a withanolide probe. Better or alternative small molecule compounds as potential drug candidates can be generated based on their likely affinity for the determined binding site in vimentin. The affinity labeled withanolide can also be used to find intermediate filament-associated proteins using chemical proteomics by extracting proteins from cells that were exposed to withanolide-biotin analog. The withanolide probes can be used to monitor expression of vimentin, in tumor samples or other diseased tissues. Withaferin analogs can be used as a treatment for diverse vimentin-associated disorders, such as cancers, angiofibrotic diseases, and chronic inflammation. |
| US08735176B2 |
Metal oxide nano-composite magnetic material, fabrication method, and method for linkage, enrichment, and isolation of phosphorylated species
The present invention relates to a metal oxide nano-composite magnetic material, fabrication method, and method for linkage, enrichment, and isolation of phosphorylated species. The metal oxide nano-composite magnetic material comprises the magnetic iron oxide nanoparticle, a silica layer immobilized onto the magnetic iron oxide nanoparticle and a metal oxide layer coated onto the silica layer. The magnetic iron oxide nanoparticles can be used for absorbing microwave radiation to accelerate the enrichment and linkage for phosphorylated species onto the metal oxide nano-composite magnetic material. Furthermore, the magnetic property of magnetic iron oxide nanoparticles leads to isolation of the metal oxide nano-composite magnetic material-target species conjugates by simply employing an external magnetic field. The specificity of the metal oxide on the surface of the metal oxide nano-composite magnetic material for phosphorylated species also leads to the linkage/enrichment of phosphorylated species with high selectivity. |
| US08735175B2 |
Multicolor microwave-accelerated metal-enhanced fluorescence (M-MAMEF)
The present invention relates to the use of multiple different light emitting molecules that emit different and detectable emission signals to provide systems and methods to detect different target products in a single assay sample, wherein the different light emitting molecules are positioned an optimal distance from metallic particles thereby enhancing emissions. Preferably, the systems and methods further comprise use of either microwave or sonic energy to increase binding reactions, timing of such reactions within the assay sample and reduce background non-specific biological absorption. |
| US08735172B2 |
Method and device for the manipulation of microcarriers for an identification purpose
The present invention relates to a method for the manipulation for an identification purpose of a microcarrier comprising the steps of: (a) an identification purpose step of the microcarrier; and (b) a positioning and orientation step prior to or during the identification purpose step, wherein the identification purpose step is a detection step for the detection of an encoded microcarrier having an anisotropy in its shape. The invention further relates to an apparatus for the manipulation for identification purposes of a microcarrier comprising means for identification purposes such as a microscope and means for the positioning and orientation of the microcarriers. |
| US08735171B2 |
Promyelocytic leukemia protein as a redox sensor
The present invention relates to a method for determining the redox status of a cell or tissue comprising a step consisting of determining the level of PML nuclear bodies in said cell or tissue. |
| US08735164B2 |
Fluoride distillation apparatus and quantifying method of sodium monofluorophosphate in toothpaste using same
The present invention relates to a fluoride distillation apparatus and a method for quantifying sodium monofluorophosphate among fluorides using the same, which increases the acid resistance of the hard tissues of the teeth and promotes remineralization of initial caries lesion. |
| US08735163B2 |
Blood coagulation system analyzing method and blood coagulation system analyzing device
A blood coagulation system analyzing method includes acquiring information relating to the coagulability of blood based on a change generated in a complex permittivity spectrum measured in a coagulation process of the blood due to addition of a substance that activates or inactivates platelets to the blood. |
| US08735159B2 |
PEF-TS expression units
The present invention relates to the use of nucleic acid sequences for regulating the transcription and expression of genes, the novel promoters and expression units themselves, methods for altering or causing the transcription rate and/or expression rate of genes, expression cassettes comprising the expression units, genetically modified microorganisms with altered or caused transcription rate and/or expression rate, and methods for preparing biosynthetic products by cultivating the genetically modified microorganisms. |
| US08735158B2 |
Compositions and methods for the targeted insertion of a nucleotide sequence of interest into the genome of a plant
Methods for the targeted integration of nucleotide sequences into a plant are provided. Transfer cassettes comprising nucleotide sequences of interest flanked by non-identical recombination sites are used to transform a plant comprising a target site. The target site contains at least a set of non-identical recombination sites corresponding to those on the transfer cassette. Exchange of the nucleotide sequences flanked by the recombination sites is effected by a recombinase. |
| US08735156B2 |
Production and use of rat spermatogonial stem cell lines
A spermatogonial stem cell line that is derived from testes of rats characterized by a desirable genetic background can serve as a source for cells to transplant into male-sterile recipient animals that are immuno-compatible with the spermatogonial line. Rat cells thus transplanted readily develop into fertilization-competent, haploid male gametes, with little or no endogenous sperm competition generated by the testes of the male-sterile recipient. This approach, constituting the first vector system for the use of rat spermatogonial lines from in vitro culture in generating mutant rats on a desired genetic background, effects maximal germline transmission of donor haplotypes from the transplanted spermatogonial cells. |
| US08735154B2 |
Templated islet cells and small islet cell clusters for diabetes treatment
A scaffold having islet cells or small islet cell clusters attached thereto in a multilayer, and a micro-mold having divots for culturing islets, wherein islet formation is influenced by the shape and dimensions of the divots are disclosed. |
| US08735151B2 |
Spontaneously contracting fish cell aggregates, use thereof and method for the production thereof
The invention relates to an in vitro method for producing spontaneously contracting fish cell aggregates, to the fish cell aggregates obtained thereby, and to the use thereof, in particular for testing biological active substances and pharmaceuticals. The in vitro method according to the invention for producing contracting fish cell aggregates comprises the following steps: a) mechanical comminution and/or partial enzymatic digestion of fish embryos or fish larvae; b) transfer of the comminuted and/or partially digested fish tissue into an enzyme-free medium and removing the supernatant by centrifuging to obtain a cell pellet; c) re-suspension of the cell pellet in a cell culture medium; d) culturing the cells, with the medium being changed at least once, until spontaneously contracting cell aggregates form. |
| US08735150B2 |
Methods for detecting embryonic stem cells, induced pluripotent stem cells, or cells undergoing reprogramming to produce induced pluripotent stem cells
The present invention relates to methods of detecting, in a sample, embryonic stem cells, induced pluripotent stem cells, and/or cells undergoing reprogramming to produce induced pluripotent stem cells. These methods include providing a sample potentially containing such cells and providing a rosamine derivative compound of the formula (I): where the rosamine derivative compound selectively produces fluorescent signals for embryonic stem cells, induced pluripotent stem cells, and/or cells undergoing reprogramming to produce induced pluripotent stem cells. These methods also include the steps of contacting the sample with the rosamine derivative compound and detecting the presence of the embryonic stem cells, induced pluripotent stem cells, and/or cells undergoing reprogramming to produce induced pluripotent stem cells based on fluorescent signals emitted by the sample following said contacting. |
| US08735145B2 |
Property effecting and/or property exhibiting compositions for therapeutic and diagnostic uses
The present invention provides an array of compositions useful for effecting and/or exhibiting changes in biological functioning and processing within cells and in biological systems containing such cells. In effect, these compositions combine chemical modifications and/or ligand additions with biological functions. The chemical modifications and/or ligand additions provide additional characteristics to the compositions without interfering substantially with their biological function. Such additional characteristics include nuclease resistance, targeting specific cells or specific cell receptors localizing to specific sites within cells and augmenting interactions between the compositions and target cells of interest as well as decreasing such interactions when desired. Also provided by the present invention are processes and kits. |
| US08735144B2 |
Bioreactor chamber
Embodiments of the invention provide a bioreactor chamber assembly comprising: a bioreactor chamber comprising first and second portions arranged to be coupled to one another thereby to provide a liquid-tight seal therebetween; a pair of clamp members; and a pair of resilient loop elements, wherein the clamp members are arranged to sandwich the chamber between the clamp members and the loop elements are arranged to apply a force between the clamp members to urge the first and second portions together. |
| US08735143B2 |
Hepatic lobule-like bioreactor
The present invention provides a hepatic lobule-like bioreactor. The bioreactor includes a nanofiber scaffold enclosed within a housing. An intrahepatic fibrous vascular network, a bile capillary network, upper hepatic bile ducts, lower hepatic bile ducts, a common bile duct connecting the upper and the lower hepatic bile ducts, and collagen fibrous microchannels for hepatocytes surrounded by the bile capillary network are distributed throughout the nanofiber scaffold. Bile capillaries in the bile capillary network are provided with two or more inlet ports for biliary epithelial cells. The collagen fibrous microchannels for hepatocytes are provided with two or more inlet ports for hepatocytes. The intrahepatic vascular network is provided with a liquid inlet port and a liquid outlet port. These ports extend through the housing. |
| US08735139B2 |
System and method for continuous fermentation of algae
The present invention is a method for fermentation of algae or algaefaction method. The method includes feeding a hydrocarbon composition into a gasifier and pre-heating a biomass stream from a fermentation reactor. The biomass stream includes a liquid portion, a catalyst, and a biomass solids portion ranging between 15-92% by weight of the biomass stream. The biomass solids portion is algae or algal solids. The biomass stream is pre-heated to a temperature range between 200° F. and 500° F. Both the syngas and the pre-heated biomass stream are injected as a mixture into a reactor, where the mixture is separated into a gas component, liquid component, and solids component. The solids component is algal crude, which can be collected for processing as transportation fuels. The gas component is a lower temperature syngas, which can also be collected for processing as electricity or transportation fuels. |
| US08735137B2 |
Use of Saccharomyces cerevisiae SUC2 gene in Yarrowia lipolytica for sucrose utilization
Disclosed herein are transformed Yarrowia lipolytica comprising an exogenous polynucleotide encoding a polypeptide having sucrose invertase activity. Also disclosed are methods of using the transformed Y. lipolytica. |
| US08735134B2 |
Isoprene synthase variants with improved solubility for production of isoprene
The present invention provides methods and compositions of variant polypeptides having isoprene synthase activity with improved solubility. In particular, the present invention provides isoprene synthase variant for increased isoprene production in recombinant host cells. |
| US08735133B2 |
Constructs and methods for the production and secretion of polypeptides
Described herein are molecules, constructs and methods for the production and secretion of polypeptides of interest by host cells, preferably bacterial host cells, and more particularly gram positive bacteria. In particular, the present invention is related to a polynucleic acid encoding a fusion protein and to uses thereof for the secretion of heterologous or homologous polypeptides of interest by a bacterial host cell, preferably Clostridium bacteria. The present invention further relates to methods and constructs for the production and secretion of heterologous or homologous polypeptides of interest proteins by host cells using such polynucleic acids and fusion proteins. |
| US08735132B2 |
Mutations and genetic targets for enhanced L-tyrosine production
The invention relates to identification of mutations and genetic targets for enhanced L-tyrosine production, and bacterial strains capable of L-tyrosine production. |
| US08735128B2 |
Polypeptides having alpha-glucuronidase activity and polynucleotides encoding same
The present invention relates to isolated polypeptides having alpha-glucuronidase activity and isolated polynucleotides encoding the polypeptides. The invention also relates to nucleic acid constructs, vectors, and host cells comprising the polynucleotides as well as methods of producing and using the polypeptides. |
| US08735124B2 |
Isolated PON1 polypeptides, polynucleotides encoding same and uses thereof in treating or preventing organophosphate exposure associated damage
An isolated polypeptide comprising the amino acid sequence of serum paraoxonase (PON1) having catalytic efficiency of kcat/KM≈106-5·107 M−1min−1 for a G-type organophosphate. |
| US08735117B2 |
Method for making artificial scaffold having porous three-dimensional body comprising cells
In on aspect, the invention includes a microcarrier bead having a porous three-dimensional core having (a) a polymeric porous three-dimensional body having porosity of about 15 to about 90% such that at least 99% of pores are interconnected and have diameters of at most 200 microns, (b) an outer protective layer and optionally (c) a filler. In another aspect, the invention includes a method of making an artificial scaffold wherein a scaffolding material is extruded into a coolant and thereby creating a porous material having a porosity of between 15-90% such that at least 99% of pores are interconnected and have diameters of at most 200 microns. |
| US08735110B2 |
Pseudomonas aeruginosa strain developed for improving fatty acid content, and method of manufacturing the same
Disclosed are novel Pseudomonas aeruginosa strains capable of producing in high yield and preparation methods thereof. The strains anchor an expression vector carrying either or both of a nucleotide sequence coding for acetyl-CoA carboxylase carboxytransferase subunit alpha of Pseudomonas aeruginosa and a nucleotide sequence coding for malonyl-CoA-[acyl-carrier-protein] transacylase of Pseudomonas aeruginosa, and/or a nucleotide sequence coding for acyl-acyl carrier protein thioesterase of Streptococcus pyogenes. The recombinant Pseudomonas aeruginosa strains are genetically stable and have high lipid or fatty acid contents, thus being applicable to the mass production of fatty acids. |
| US08735108B2 |
Optimized strains of Yarrowia lipolytica for high eicosapentaenoic acid production
Engineered strains of the oleaginous yeast Yarrowia lipolytica capable of producing greater than 50 weight percent of eicosapentaenoic acid in the total oil fraction are described. These strains over-express heterologous Δ9 elongases, Δ8 desaturases, Δ5 desaturases, Δ17 desaturases, Δ12 desaturases and C16/18 elongases, and optionally over-express diacylglycerol cholinephosphotransferases. Gene knockouts are also described, as are methods for producing EPA within host cells, and products comprising EPA from the optimized Yarrowia lipolytica strains. |
| US08735105B2 |
Polypeptides having isoamylase activity and methods of use
The present invention relates to isolated polypeptides having isoamylase activity derived from Dyella japonica and isolated polynucleotides encoding the polypeptides. The invention also relates to nucleic acid constructs, vectors, and host cells comprising the polynucleotides as well as methods of producing and using the polypeptides. The invention also relates to the use of said polypeptide having isoamylase activity for producing glucose syrup, fructose syrup, maltose syrup or maltitol. |
| US08735101B2 |
Glucosyl stevia composition
Glucosyl stevia compositions are prepared from steviol glycosides of Stevia rebaudiana Bertoni. The glucosylation was performed by cyclodextrin glucanotransferase using the starch as source of glucose residues. The short-chain glucosyl stevia compositions were purified to >95% content of total steviol glycosides. The compositions can be used as sweetness enhancers, flavor enhancers and sweeteners in foods, beverages, cosmetics and pharmaceuticals. |
| US08735098B2 |
Methods and composition for secretion of heterologous polypeptides
The present invention relates generally to the fields of molecular biology and protein technology. More specifically, the invention concerns signal sequences for the secretion of heterologous polypeptide from bacteria. The invention also concerns recombinant polypeptides and uses thereof. |
| US08735090B2 |
Post protein hydrolysis removal of a potent ribonuclease inhibitor and the enzymatic capture of DNA
The present invention concerns compositions and methods of extracting infectious pathogens from a volume of blood. In one embodiment, the method includes the steps of creating a fibrin aggregate confining the pathogens and introducing a fibrin lysis reagent to expose the pathogens for analysis. The present invention also concerns materials and methods for removing aurintricarboxylic acid (ATA) from a sample. |
| US08735084B2 |
Biochip array with a three-dimensional structure and method for forming the same
The present invention discloses a biochip with a three-dimensional structure. The surface of the three-dimensional mesoporous layer is chemically modified to recognize labeled DNAs, proteins, peptides, saccharides, and cells. In addition, this invention also discloses a method for preparing the biochip with a three-dimensional mesoporous layer, including a blending process, a heating process, a coating process, a gelation process, a cleaning process, a drying process, and a surface modification process. |
| US08735079B2 |
Method for risk stratification in stable coronary artery disease
An in vitro method for the risk stratification of patients with stable arteriosclerosis, especially stable coronary artery disease, is disclosed wherein the concentration of procalcitonin is determined in the circulation of such patients using a highly sensitive PCT assay, and wherein within the range of PCT concentrations in the typical normal range of healthy individuals cutoff values are defined which distinguish groups of individual patients with stable arteriosclerosis in accordance with personal cardiac risk, and patients are allotted to one of said risk groups on the basis of their individual PCT concentrations. |
| US08735072B2 |
Methods of identifying agents that diminish cellular toxicity associated with an α-synuclein polypeptide of parkinson's disease in yeast
Methods of screening candidate agents to identify lead compounds for the development of therapeutic agents for the treatment of a neurodegenerative disease, such as Huntington's Disease and Parkinson's Disease and methods for identifying a mutation in, or changes in expression of, a gene associated with neurodegenerative disease, such as Huntington's Disease and Parkinson's Disease, are provided. |