Semiconductor ic device
专利汇可以提供Semiconductor ic device专利检索，专利查询，专利分析的服务。并且PURPOSE:To contrive stabilization of a characteristic of the IC by a method wherein an SiO2 film is removed at a part corresponding to an annular hole surrounding MOS capacity and burried with a material preventing movable ions. CONSTITUTION:An N-epitaxial layer on a P type Si substrate having an N -burried layer is isolated by a P layer to form islands. The island 12A is provided with a bipolar transistor T and at the same time, the island 12B is provided with the MOS capacity C. A part 18a where the SiO2 film 18 formed on the top surface of the N-epitaxial layer corresponds to the N layer 17 is made thin and forms a hole RH in circular by surrounding the part where the capacity C is arranged. An SiO2 19 of P-dope is reservoired and the film 19 is perforated an opening on the part 18a at the same time when each connection hole is formed, and the film 19 is remained within the hole RH. Then, Al electrodes 20-24 are formed to make the NPN transistor T and the MOS capacity C be completed. With this construction, since Na- ions are prevented to move by the P-doped SiO2 film in the hole RH even the ions invading the SiO2 film 18a, the transistor characteristic is stabilized.，下面是Semiconductor ic device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 高压ESD保护器件、电路及装置 | 2020-05-11 | 881 |
| 一种高压衬底PNP双极结型晶体管及其制造方法 | 2020-05-12 | 199 |
| 用于切换模式电源的供电电压连接的p型有源钳位 | 2020-05-08 | 516 |
| 一种双向开断的混合式直流断路器 | 2020-05-11 | 28 |
| 一种含有背面槽栅及浮空环的逆导型IGBT | 2020-05-11 | 514 |
| 用于晶体管单元电路故障诊断的虚拟仿真实验方法 | 2020-05-11 | 730 |
| 电器件晶片 | 2020-05-08 | 412 |
| 一种多直流电机正向串联控制系统及方法 | 2020-05-11 | 397 |
| 基于T型结构的单相五电平整流器 | 2020-05-08 | 342 |
| 一种新型高性能线性功率放大器 | 2020-05-11 | 918 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
