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Programmable read only memory

阅读:700发布:2022-10-05

专利汇可以提供Programmable read only memory专利检索,专利查询,专利分析的服务。并且PURPOSE: To manufacture it easily with simple construction by laminating the main electrode of a transistor and a data line through a film insulating layer which does not carry currents at low voltage and induces insulation breakdown by the application of high voltage and carries currents.
CONSTITUTION: At a contact part 16, the main electrode D of a transistor 11 and a data line LD are laminated through a film insulating layer 18 which does not carry currents at low voltage and induces insulation breakdown by the application of high voltage and carries currents. Since this is of simple structure that it performs write by breaking the insulation of the film insulating layer 18 at the contact part this way, the making of this contact part is easy, consequently it can be manufactured easily.
COPYRIGHT: (C)1991,JPO&Japio,下面是Programmable read only memory专利的具体信息内容。

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