Laminating type high-voltage semiconductor element
专利汇可以提供Laminating type high-voltage semiconductor element专利检索，专利查询，专利分析的服务。并且PURPOSE:To inhibit the generation of avalanche noises by constituting a plurality of diode chips positioned near one end or both ends by ones of reverse dielectric resistance higher than ones positioned at the central section. CONSTITUTION:A large number of the diode chips 1a-1n are laminated and joined, and form a block-shaped laminate. The laminate is molded integrally by an insulator 4. The diode chips (every approximately one fifth or one third of all chips) positined near an anode lead 2 and a cathode lead 3 in these chips 1a-1n are constituted by ones, reverse dielectric resistance thereof is improved more than the diode chips at the central section by approximately 35-50%. When a laminating type high-voltage semiconductor constituted in this manner is incorporated into a high-voltage rectifying circuit and used, high share voltage is applied to the diode chips in the vicinity of the AC side, but the generation of an avalanche breakdown is inhibited because the reverse dielectric resistance of the diode chips of the section is improved previously.，下面是Laminating type high-voltage semiconductor element专利的具体信息内容。
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