Laminating type high-voltage semiconductor element
专利汇可以提供Laminating type high-voltage semiconductor element专利检索，专利查询，专利分析的服务。并且PURPOSE:To inhibit the generation of microplasma noises by lowering the resistance value of a surface protective layer. CONSTITUTION:A large number of diode chips 1 are laminated and fixed through a joining material 2, and the outer circumference of a block-shaped laminate obtained is coated with the surface protective layer 5. In this case, the layer 5, volume resistivity thereof is lowered, is used so that leakage currents flowing through the layer 5 on reverse voltage are made larger than reverse leakage current value flowing through each chip 1. Consequently,an equivalent circuit for the laminating type high-voltage semiconductor element takes a form in which resistors 5a-5n by the surface protective layer 5 are connected in parallel with each of the diode chips 1a-1n, and the reverse leakage currents of each chip 1a-1n are controlled by the resistors 5a-5n. Accordingly, since an effect due to the variance of the reverse leakage currents of each diode chip can be eliminated, the voltage shares of each diode chip are equalized, and the generation of microplasma noises can be inhibited.，下面是Laminating type high-voltage semiconductor element专利的具体信息内容。
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