Semiconductor device

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专利汇可以提供Semiconductor device专利检索,专利查询,专利分析的服务。并且PURPOSE: To fine silicon precipitated particles in an electrode film, and to reduce defective wirings and defective contacts largely by using an electrode material consisting of an aluminum-silicon alloy or an aluminum-copper alloy to which a specific quantity of phosphorus is added.
CONSTITUTION: An electrode material composed of an aluminum-silicon alloy or an aluminum-copper alloy to which 0.05wt.%∼2.0wt.% phosphorus is added is employed. When 0.05wt.% or more of aluminum is added to the Al-Si group alloy, a high melting-point aluminum phosphide Al
3 P is generated in the alloy. Since the phosphide has the same diamond structure as silicon and a lattice constant thereof is extremely close to that of silicon, a large number of the phosphides fill the role of crystalline nuclei on silicon precipitation, and silicon precipitated particles can be fined. Accordingly, phosphorus is added to the Al-Si alloy or the Al-Si-Cu alloy, and silicon particles precipitating in wirings and contact holes for a semiconductor device are fined, thus reducing deflective wirings and defective contacts by the silicon particles.
COPYRIGHT: (C)1987,JPO&Japio,下面是Semiconductor device专利的具体信息内容。

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