最新美国发明专利第2014-05-06期 - 专利汇|PatentHub专利检索|专利查询网|发明专利查询分析

Document	Document Title
US08717155B2	Brake warning device and method A brake warning device and method includes acquiring acceleration data of a bicycle, and calculating a specific parameter according to the acceleration data acquired within a preset interval using a preset calculation method. The bicycle is determined to be decelerating if the specific parameter is less than a preset threshold value. A brake light of the brake warning device is turned on to warn that the bicycle is braking.
US08717146B2	Methods and systems for integrated interrogation of RFID sensors An integrated interrogator for a RFID sensor is provided. The integrated interrogator comprises a digital reader in communication with the RFID sensor, an impedance reader in communication with the RFID sensor, and one or more controllers that coordinate actions of the digital reader and the impedance reader.
US08717145B2	RFID portal system with RFID tags having various read ranges A system and method selectively reads radio frequency identification (“RFID”) tags within an RFID interrogation zone. A portion of the RFID tags have a first operating range and a portion of the RFID tags have a second operating range that is different from the first operating range. Each RFID tag is programmed with an identifier associated with the operating range of the RFID tag. A first interrogation signal is transmitted which has sufficient power to activate RFID tags that are located within the RFID interrogation zone and have the first operating range. A response signal is received from each RFID tag capable of receiving the first interrogation signal. Each response signal indicates the identifier of the associated RFID tag. Each RFID tag that has an identifier associated with the first operating range is selected.
US08717143B2	Searchable binder A binder management system having a cabinet with shelves for removable storage of searchable binders. Each binder has a body with front and rear covers and a spine. Inside the body is a binder mechanism for removably retaining sheet media. Each binder has externally extending upper and tower ohmic contact members which ohmically engage conductive members mounted on the shelf surfaces near the front. Each binder has a binder identification circuit coupled to an LED mounted on the binder spine in a location visible when the binder rests on a shelf. When a binder identification signal from a host computer is presented to the shelf conductive members it is transferred by the binder contact members to the binder identification circuit. If the signal matches, the LED is activated to aid the user in finding the binder. An LED and an optional audible indicator are mounted on the shelves to further aid the user in finding the sought binder.
US08717142B2	Door lock control apparatus for vehicle A door lock control apparatus includes a lock switch on an exterior of a vehicle, a controller, and a check device. The controller performs a first key check in response to a lock command inputted through the lock switch. The first key check determines whether an electronic key specific to the vehicle is located outside around the vehicle based on a response from the key. The check device has previously performed a second key check, after the key has been put into a situation in which the key might have been moved from inside to outside the vehicle. The second key check determines whether the key is located inside the vehicle based on the response from the key. The check device stores a result of the second key check as a stored check record, which is then immediately available for checking when the controller responds to an inputted lock command.
US08717139B2	Transformer incorporated in electronic circuits A vibration-suppressed transformer is fixed to a base plate and includes a magnetic lower core, two or more magnetic upper cores, primary and secondary coils. The lower core is on the base plate. The upper cores are arranged face to face over the lower core. The coils are arranged between the lower and upper cores. Each upper core contacts the lower core, on an outer side of the coils, with a first gap being provided between the upper and lower cores, on an inner side of the coils. The upper cores are extended towards each other from the outer to the inner side of the coils, with a second gap being provided therebetween. The second gap is provided therein with a non-magnetic pressing member to press the lower core against the base plate, on an inner side of the coils.
US08717135B2	Electronic component and method of manufacturing the same An electronic component has a drum-shaped core member constituted by an assembly of soft magnetic alloy grains containing iron (Fe), silicate (Si) and chromium (Cr), a coil conductive wire wound around the core member, a pair of terminal electrodes connected to ends of the coil conductive wire, and an outer sheath resin part covering the wound coil conductive wire and constituted by a magnetic powder-containing resin; wherein there is an area where only the resin material in the magnetic powder-containing resin is permeated from the surface of the core member to a specified depth.
US08717134B2	System with directional pressure venting A system comprises a tank, a radiator connected to the tank, and a component situated within the tank and susceptible to creating increasing pressure within system when under a fault condition. The radiator is configured to directionally vent pressure under excessive pressure conditions.
US08717132B2	Unibody magnet A method for plating magnets with metal is disclosed. In one embodiment, the metal is aluminum and the aluminum plating provides a number of aesthetic and structural advantages, over brittle magnetic materials, which are only plated with a thin, anti-corrosive metallic layer. More specifically, methods for creating multi-pole bar magnets and structural elements primarily with aluminum coated magnetic material are disclosed.
US08717131B2	Panel system for covering a glass or plastic surface An improved panel system for covering a glass or plastic surface is provided that involves field emission structures having electric or magnetic field sources. The magnitudes, polarities, and positions of the magnetic or electric field sources are configured to have desirable correlation properties, which may be in accordance with a code. The correlation properties correspond to a desired spatial force function where spatial forces between field emission structures correspond to relative alignment, separation distance, and the spatial force function.
US08717128B2	Electromagnetic relay An electromagnetic relay includes multiple contact sets each including a fixed contact and a movable contact displaceable in a first direction to approach the fixed contact and in a second direction to move away from the fixed contact; multiple permanent magnets each provided on the peripheral side of a corresponding one of the contact sets and having a polarity direction perpendicular to the first and second directions; and multiple ferromagnetic bodies parallel to the polarity directions of the permanent magnets and the first and second directions, wherein in a DC electric current flowing through each of the contact sets, the direction of a force exerted based on the permanent magnet is equal to the direction of a force exerted based on the ferromagnetic body.
US08717125B2	Transmission line with left-hand characteristics including an interdigital capacitor with partially overlapping fingers There is herein disclosed an interdigital capacitor, an inductor, and an LH transmission line and a coupler using the interdigital capacitor and the inductor. The interdigital capacitor comprises two finger sets which are substantially disposed in parallel with each other. Fingers of each finger set are overlapped at outer edges thereof with each other to thereby generate capacitance. The inductor is formed substantially spirally inside the transmission line, so that it can have a large inductance in a compact shape and can be used in a broad frequency band. The LH transmission line has a broad frequency band in a compact shape, which includes interdigital capacitors connected in series with each other and inductors connected in parallel with each other. In addition, the coupler employing the LH transmission line has an excellent couplability.
US08717122B2	Cavity filter A cavity filter includes a housing, a plurality of resonators received in the housing, a cover covering the opening, a sliding plate, and a plurality of tuning posts. The housing defines an opening and comprises at least one pair of positioning portions. The plurality of tuning posts are fixed in the cover corresponding to the plurality of resonators. The sliding plate is disposed between the cover and the plurality of resonators, and is slidably positioned at the at least one pair of positioning portions. The sliding plate comprises a plurality of tuning cells and at least one elastic arm. The plurality of tuning cells is coated with a metallic layer and corresponds to the plurality of resonators. The at least one elastic arm extends from the sliding plate and elastically resists the cover.
US08717121B2	Bulk acoustic wave resonator A bulk acoustic wave resonator includes a substrate, a resonator section in which a piezoelectric film is sandwiched between a pair of electrodes, and a vibration region where the electrodes overlap when viewed in a film thickness direction is defined, an elastically deformable support section that connects the substrate and the resonator section, a membrane arranged between the resonator section and the substrate to face the vibration region of the resonator section and be fixed on the substrate with a space in between, and driver sections that are defined in the resonator section and the substrate adjacent to the vibration region and the membrane, and that move the resonator section toward and away from the substrate. The vibration region of the resonator section contacts the membrane when the driver sections move the resonator section close to the substrate.
US08717117B2	Wideband active quasi-circulator Aspects describe a wideband active quasi-circulator that has the advantages of small size, lightweight, and compatibility with monolithic microwave integrated circuit (MMIC) technology. An active quasi-circulator is provided that comprises both a power amplifier and a low noise amplifier. The active quasi-circulator can operate over a wide frequency range with isolation or substantial isolation between a power amplifier and a low noise amplifier that is tunable with isolation or substantial isolation at any frequency within the wide frequency range. The provided quasi-circulator is suitable for use in mobile units in multi-band radio frequency communication systems, as well as in other configurations.
US08717115B2	Resonator circuit and method of generating a resonating output signal A resonator circuit enabling temperature compensation includes an inductor coupled between a first node and a second node of the resonator circuit; a capacitor circuit coupled between the first node and the second node; and a temperature compensation circuit coupled between the first node and the second node. The temperature compensation circuit comprises a varactor coupled to receive a temperature control signal that sets the capacitance of the varactor. A method of generating a resonating output is also disclosed.
US08717111B2	Oscillator device An oscillator device comprises a resonator mass which is connected by a spring arrangement to a substrate and a feedback element for controlling oscillation of the resonator mass, which comprises a piezoresistive element connected between the resonator mass and the substrate. The invention provides an oscillator device in which the two parts (resonator and circuit to close the oscillation loop) are combined inside one single oscillator device, which can be a MEMS device.
US08717104B1	Vector voltage samplers for RF interface control of power amplifier A system for compensating impedance mismatch at an output terminal of a RF power amplifier is disclosed. In an embodiment, the system includes a plurality of samplers to measure a first set of parameters associated with an amplified signal being generated by the power amplifier. The first set of parameters is transmitted to a processing unit. The processing unit varies an impedance of an impedance element based on the first set of parameters. The impedance element is connected to the output terminal of the power amplifier.
US08717096B2	Switching amplifier system and method for suppressing signal distortion thereof The invention further provides a switching amplifier system. In one embodiment, the switching amplifier system comprises a noise shaper, a corrector, and a pulse width logic. The noise shaper receives a first signal, performs a noise shaping process to process the first signal according to a feedback signal to generate a second signal sliced into a plurality of frames. The corrector adds a plurality of correction pulses respectively to the frames of the second signal to obtain a third signal in such a way that the correction pulse added to the second signal in a target frame selected from the frames has a polarity inverse to that of an original waveform of the second signal in the target frame. The pulse width logic then converts the third signal to a pulse width modulation (PWM) signal.
US08717095B2	Chopper circuitry operable in a high temperature environment of a turbine engine Chopper circuitry may be adapted to operate in a high-temperature environment of a turbine. A first semiconductor switch (122) may have a first terminal coupled to receive a first output signal from a first leg (148) of a differential amplifier (150). A second switch (128) may have a first terminal coupled thru a first resistive element (R1) to a second terminal of the first semiconductor switch. The first terminal of the second semiconductor switch may be coupled to receive thru a second resistive element (R2) a second output signal from a second leg (152) of the amplifier. Switches (122,128) may be responsive to a switching control signal to respective gate terminals of the switches to supply an output signal, which alternates in correspondence with a frequency of the switching control signal from a first amplitude level to a second amplitude level, which effectively provides a doubling amplification factor.
US08717089B1	Adaptive voltage scaling using a delay line In one embodiment, a method includes determining, for an integrated circuit chip, a delay measurement corresponding to a first number of stages in a delay line. A power supply voltage measurement is also determined. The method determines a second number of stages correlated to the power supply voltage measurement. The second number of stages correspond to a desired timing delay. It is determined if a power supply voltage should be adjusted using a comparison based on the first number of stages and the second number of stages. A control signal is output for adjusting the power supply voltage when it is determined the power supply voltage should be adjusted.
US08717086B2	Adaptive cascode circuit using MOS transistors The present invention relates to a cascode circuit using MOS transistors. In one embodiment, an adaptive cascode circuit can include: (i) a main MOS transistor; (ii) n adaptive MOS transistors coupled in series to the drain of the main MOS transistor, where n can be an integer greater than one; (iii) a shutdown clamping circuit connected to the gates of the n adaptive MOS transistors, where the shutdown clamping circuit may have (n+1) shutdown clamping voltages no larger than rated gate-drain voltages of the main MOS transistor and n adaptive MOS transistors; and (iv) n conduction clamping circuits coupled correspondingly to the gates of the adaptive MOS transistors, where the n conduction clamping circuits may have n conduction clamping voltages no larger than the conduction threshold voltages of the adaptive MOS transistors.
US08717084B1	Post fabrication tuning of an integrated circuit An integrated circuit 2 includes a transistor 26 which has a normal switching speed arising during normal operations of that transistor that apply electrical signals within normal ranges. If it is desired to change the speed of operation of the transistor, then speed tuning circuitry 12 applies a tuning electrical signal with a tuning characteristic outside of the normal range of characteristics to the transistor concerned. The tuning electrical signal induces a change in at least one of the physical properties of that transistor such that when it resumes its modified normal operations the switching speed of that transistor will have changed. The tuning electrical signal may be a voltage (or current) outside of the normal range of voltages applied to the gate of a transistor so as to induce a permanent increase in the threshold of that transistor and so slow its speed of switching. Temperature of a transistor may also be controlled to induce a permanent change in performance/speed.
US08717083B2	Limiting amplifier and method thereof A method including receiving an input signal; amplifying the input signal to generate an output signal using a cascade of a plurality of amplifier stages including a first amplifier stage and a last amplifier stage; generating a voltage signal by sensing the output signal in a noninvasive manner so that the sensing results in substantially no change to the output signal; generating a current signal from the voltage signal using a transconductance amplifier; and injecting the current signal into an output node of the first amplifier stage in a noninvasive manner so that the injecting results in substantially no change to an amplification function of the first amplifier stage.
US08717082B2	Pulse width anticipator An electrical circuit and a procedure for tracking at least one input pulse width applied to the electrical circuit. The electrical circuit includes a threshold component (e.g., a comparator) arranged to provide an output pulse width based on whether an input to the threshold component exceeds a threshold. The circuit also includes a controller arranged to control the threshold of the threshold component, based on the at least one input pulse width applied to the electrical circuit, such that the output pulse width of the threshold component tracks the at least one input pulse width applied to the electrical circuit. The controller includes at least a switch, and the output pulse width tracks the at least one input pulse width by following or anticipating the pulse width. In one example embodiment the tracking is performed for a series of pulses of varied widths.
US08717081B2	Non-overlapping clock generator A non-overlapping clock generator including an enabling module and N pulse-generating modules connected as a ring is provided. When the ith input node has a high voltage level, the enabling module enables the ith pulse-generating module so as to trigger the ith pulse-generating module to discharge the ith input node. After the ith input node has been discharged to a low voltage level, the ith pulse-generating module charges the ith output node to the high voltage level.
US08717080B2	Digital delay line driver Improved digital delay line driver is described. A delay line driver circuit includes elements to drive the delay line in one or multiple locations to provide a dynamic, adjustable slew rate on the output signal. The delay line driver circuit may also include active elements coupled to the transistors of the delay line to deactivate the delay line transistors substantially simultaneously, rather than cascading in series. Shutting off the delay line transistors substantially simultaneously reduces or eliminates crowbar or shoot through current on an edge transition of the output signal.
US08717076B1	Edge rate control gate drive circuit and system for low side devices with capacitor An apparatus, comprising: a PMOS current mirror have a first PFET and a second PFET coupled at their respective gates; a first current source coupled to drain of the first PFET; a second current source configured to have a current that is greater than the first current source, coupled to the drain of the second PFET; a capacitor coupled to the gates of the PFET current mirror; a third PFET gate-coupled to the current mirror; a driver NFET having a gate coupled to the drain of the third PFET, wherein a drain of the driver NFET is coupled to the capacitor.
US08717073B2	Digital PLL circuit and clock generator A circuit according to the present invention includes: an oscillator; an divider; a time-to-digital converter comparing the phase and frequency of a reference clock signal REF from the divider with an internal clock signal and outputting digital data D1 based on the comparison results; a digital loop filter receiving the D1 and outputting digital data W1; a data holder holding the W1 from the filter in time series manner; a switch selecting either digital data W2 from the holder or the W1 and outputting the selected data as digital data W3; a digitally controlled oscillator with oscillation frequency controlled based on the W3; and a data controller switching input data of the switch, and starting/halting the operation of the oscillator, the divider, the converter and the filter. Current consumption by the digital PLL circuit can be reduced.
US08717071B2	High voltage linear amplifier driving heavy capacitive loads with reduced power dissipation A capacitive load drive circuit may comprise a high current drive amplifier configured to be coupled to a capacitive load during a high current ramp up of the voltage across the capacitive load to a cut off voltage; a low current drive amplifier configured to be connected to the capacitive load during a low current ramp up of the voltage across the capacitive load, from the cut off voltage to a maximum voltage across the capacitive load; and the high current drive amplifier configured to be connected to the capacitive load during a high current ramp down of the voltage across the capacitive load. The low current drive amplifier may be connected to the capacitive load during a period of steady state of the voltage across the capacitive load, intermediate the low current ramp up and the high current ramp down.
US08717068B2	Drive unit for driving voltage-driven element A controller of a drive unit is configured so as to control a voltage supplied to a gate resistor of a voltage-driven element by using of a voltage of a feedback connector when an electrical connection between the feedback connector and the gate resistor of the voltage-driven element is ensured. Further, the controller of the drive unit is configured so as to control the voltage supplied to the gate resistor of the voltage-driven element by using of a voltage of an output connector when the electrical connection between the feedback connector and the gate resistor of the voltage-driven element is not ensured.
US08717066B2	Clock diagnosis circuit A clock diagnosis circuit includes: a delay circuit to delay the clock by a prescribed time which is not more than the clock pulse width; an integral multiplication delay circuit to delay a delayed clock outputted from the delay circuit by a prescribed number of cycles; a first exclusive OR circuit to encode the clock using the delayed clock; a second exclusive OR circuit to decode an output of the first exclusive OR circuit using an output of the integral multiplication delay circuit; and a comparison circuit to compare the clock with an output of the second exclusive OR circuit to thereby detect a malfunction of the clock.
US08717055B2	Probe devices formed from multiple planar layers of structural material with tip regions formed from one or more intermediate planar layers Embodiments disclosed herein are directed to compliant probe structures for making temporary or permanent contact with electronic circuits and the like. In particular, embodiments are directed to various designs of cantilever-like probe structures. Some embodiments are directed to methods for fabricating such cantilever structures. In some embodiments, methods are used to form probe structures from a plurality of planar multi-material layers wherein the probe structures include a contact tip and a compliant body with the compliant body formed from at least one material that is different from the tip material and wherein compliant body provides for elastic compression of the probe in a plane of primary motion during use and wherein during formation a stacking direction of the plurality of layers is perpendicular to the plane of primary motion.
US08717051B2	Method and apparatus for accurately measuring currents using on chip sense resistors Systems and methods for managing process and temperature variations for on-chip sense resistors are disclosed. The system includes a circuit that can leverage a linear gm circuit in order to provide linear gains (positive gains and/or negative gains). The linearity of the circuit enables compensation for temperature and process variations across an entire range of current (positive to negative). A control signal is generated by using a linear gm amplifier and a replica resistor, which is substantially similar to the on chip resistor. The control signal is used to control the gain of a disparate linear gm amplifier within a compensation circuit, which provides an offset voltage to compensate for the variation in resistance of the on chip resistor.
US08717048B2	System for post-processing of electronic components A method of post-processing a plurality of electronic components in a post-processing machine after fabrication of the electronic components including providing a carrier with align fixtures, which align fixtures have a clamping mechanism, actuating the clamping mechanism to enlarge a size of receptacles, each of the receptacles is assigned to one of the align fixtures and the enlarged receptacles are larger than the electronic components to be received, positioning the electronic components in the receptacles of the align fixtures, actuating the clamping mechanism to reduce a size of the receptacles so that the electronic components are aligned within the receptacles of the carrier, placing the carrier in the post processing machine, and subjecting the electronic components to operations of the post-processing machine while the electronic components maintain in aligned positions in the receptacles of the carrier.
US08717040B2	Method for instantaneously determining rates of distortion of signals on an AC electrical network, and associated device A method for instantaneously determining rates of distortion on variable frequency signals, and an associated device, in which a harmonic distortion rate is calculated across the shortest possible temporal window, corresponding to the duration of a period of a given signal's fundamental. Hence, the aim being to precisely determine the signal frequency value, whose HDR is to be calculated, an iteration of certain measurements, achieved at the time of a given calculation, is embodied in order to calculate the HDR on subsequent signals.
US08717039B2	Electromagnetic generating device for testing electromagnetic compatibility An electromagnetic generating device is used for testing an electromagnetic interference of electronic elements of an electronic device. The electromagnetic generating device includes a power source and a detector. The power source includes a power output. The detector includes a first magnetic guiding portion, a second guiding portion, and an electronic coil. The first magnetic guiding portion is connected to the second magnetic guiding portion. The electronic coil surrounds the second magnetic guiding portion. The electronic coil includes an input coupled to the power output of the power source, and an output being grounded.
US08717037B2	Electronic control device A main microcomputer abnormality determination section checks whether or not a voltage value of Vcc based on digital data output from a main microcomputer analog-to-digital converter is equal to or higher than a threshold value to thereby perform abnormality determination for the main microcomputer analog-to-digital converter and Vref. A sub microcomputer abnormality determination section checks whether or not the voltage value of Vcc is equal to or higher than a threshold value based on digital data output from a sub microcomputer analog-to-digital converter to thereby perform abnormality determination for the sub microcomputer analog-to-digital converter and Vref. An abnormality identifying section identifies an abnormality occurring site by using both results of the abnormality determination performed by the main microcomputer abnormality determination section and the sub microcomputer abnormality determination section.
US08717025B2	Method and system for echo planar imaging with slice selection also occurring concurrently with phase encoding, during readout In a method and system for echo planar imaging, after having applied a radiofrequency pulse and a slice selection gradient, continuous readout gradients alternating between positive and negative are applied and a phase encoding gradient is applied before starting each readout gradient. A slice selection gradient is applied at the same time as applying the phase encoding gradient. Scanning signals are collected during the duration of the readout gradients. Image reconstruction is implemented based on the scanning signals to obtain a scanned image.
US08717024B2	System and method for generating a magnetic resonance image using compressed sensing and parallel imaging A method for generating a magnetic resonance image includes acquiring a first k-space data set from each of a plurality of RF coils. The first k-space data set includes calibration data and randomly undersampled data. For each RF coil, a fully randomly sampled k-space data set is generated by removing a portion of the calibration data. A compressed sensing reconstruction technique is applied to the fully randomly sampled k-space data set to generate an aliased image, which is used to generate a uniformly undersampled k-space data set. A second k-space data set is generated by inserting the portion of the calibration data and a parallel imaging reconstruction technique is applied to the second k-space data set to synthesize unacquired data. The second k-space data set and the synthesized data are combined to generate a complete k-space data set for the RF coil.
US08717023B2	Relaxometry quantification self-justification fitting Apparatus, methods, and other embodiments associated with self-justification fitting for magnetic resonance imaging (MRI) relaxation parameter quantification are described. One example nuclear magnetic resonance (NMR) apparatus includes a self-justification fitting logic configured to selectively include and exclude data points from a set of data points associated with NMR signals based, at least in part, on their impact on a fit attribute (e.g., standard deviation). In one embodiment, the self-justification is configured to select a subset of data points from the set of data points as a function of values for a fit attribute computed from fitting at least two different subsets of data points from the set of data points to a known NMR signal evolution.
US08717021B2	SAR dosimeter for RF power deposition in MRI and methods and systems related thereto Featured is a dosimeter device that measures SAR deposited by RF power deposition during MRI of a specimen. Such a dosimeter device includes a transducer that is configured to present a load to the MRI scanner in which the transducer is located and to provide an output representative of signals induced in the transducer. The transducer also is configured so that the presented load is substantially equivalent to another load which would be presented by the specimen during MRI of the specimen. Such a transducer also is configured so as to generate an MRI signal that is sufficient to allow the MRI scanner to adjust the RF power to a value substantially equal to that of the specimen. Also featured are methods for measuring SAR deposited by RF power deposition and apparatuses or system embodying such a dosimeter device.
US08717015B2	Linear-with-magnetic field magnetoresistance device A magnetic field measuring system is disclosed. The magnetic field measuring system includes a substrate, a conductive well formed in the substrate, the well having a first side with a first length, a first contact electrically coupled to the conductive well at a first location of the first side, a second contact electrically coupled to the conductive well at a second location of the first side, wherein the distance between the first location and the second location is less than the first length, a stimulus circuit coupled to the first contact and the second contact, and a sensor for identifying a property indicative of the length of a current path from the first location to the second location through the conductive well.
US08717012B2	Eddy current probe for surface and sub-surface inspection An eddy current probe includes an excitation coil for coupling to a low-frequency alternating current (AC) source. A magnetoresistive sensor is centrally disposed within and at one end of the excitation coil to thereby define a sensing end of the probe. A tubular flux-focusing lens is disposed between the excitation coil and the magnetoresistive sensor. An excitation wire is spaced apart from the magnetoresistive sensor in a plane that is perpendicular to the sensor's axis of sensitivity and such that, when the sensing end of the eddy current probe is positioned adjacent to the surface of a structure, the excitation wire is disposed between the magnetoresistive sensor and the surface of the structure. The excitation wire is coupled to a high-frequency AC source. The excitation coil and flux-focusing lens can be omitted when only surface inspection is required.
US08717005B2	Inherently accurate adjustable switched capacitor voltage reference with wide voltage range A switched capacitor voltage reference including a single bias current source, three capacitors, diode devices, an amplifier and switching circuits for developing a temperature independent reference voltage. A single current source avoids having to match multiple current sources. A first capacitor and at least one diode device set a voltage having a negative temperature coefficient. A second capacitor and each of the diode devices set a voltage having a positive temperature coefficient. A third capacitor allows adjustable gain to enable a wide voltage range including a low voltage such as less than one volt. The switching circuits switch between multiple modes for developing and then combining the different temperature coefficient voltages. The topology allows a simple amplifier to be used. The topology is inherently accurate and does not require device trimming. An averaging method may be used to compensate for any mismatch between the diode devices.
US08717003B2	Voltage regulator circuit including pulse generators A voltage regulator circuit includes: a first pulse generator configured to output a pulse whose level remains unchanged when an input signal of a first circuit is in a first period, and whose level changes from a second level to a first level when an edge of the input signal of the first circuit is detected after the first period; a second pulse generator configured to output a pulse from a time that the pulse output by the first pulse generator becomes the first level until a second period elapses; a first field-effect transistor having a source connected to a power supply potential node, and a drain connected to a power supply potential terminal of the first circuit; and a first switch configured to cause a potential at a gate of the first field-effect transistor to be a first potential.
US08716994B2	Analog circuit configured for fast, accurate startup Techniques and circuits are described by which analog circuits may be quickly driven to desired states at startup in a fast and accurate manner.
US08716993B2	Low dropout voltage regulator including a bias control circuit A low dropout (LDO) regulator includes a voltage regulation loop for providing an output voltage to an output terminal, where the output voltage is proportional to a reference voltage. The voltage regulation loop includes a current bias input for receiving a bias current. The LDO regulator also includes a bias current control circuit for providing the bias current at a first value when the reference voltage is greater than a feedback voltage and at a second value higher than the first value when the reference voltage is less than the feedback voltage.
US08716990B2	Synchronous rectifying DC-to-DC converter device with compensated low-side switch offset voltage According to one embodiment, a DC-to-DC converter includes a high-side switch, a low-side switch, a high-side controller, and a low-side controller. The low-side switch is connected to the high-side switch in series. The high-side controller is configured to control the high-side switch. The low-side controller includes a first detector and an offset canceller. The first detector is configured to detect a current of the low-side switch. The offset canceller is configured to hold an output of the first detector as an offset voltage when the low-side switch is off and compensate an output of the first detector by the offset voltage when the low-side switch is on. The low-side controller is configured to compare a compensated output of the first detector with a reference voltage and turn off the low-side switch.
US08716989B2	Controllable DC to DC converter A DC to DC converter comprising an inductor, first and second electrically controllable switches and a controller, wherein the first electrically controllable switch is interposed between an input node and a first terminal of the inductor and the second electrically controllable switch extends between a second terminal of the inductor and a common node or a ground, and where a first rectifier extends between the common node or ground and the terminal of the inductor and a second rectifier connects the second terminal of the inductor to an output node, wherein the controller controls the operation of the first and second switches to perform voltage step down or step up, as appropriate, to achieve a desired output voltage and wherein a decision about when to switch the first electrically controlled switch is made as a first function of a voltage error between the output voltage and a target output voltage, and an estimate of the current flowing in the inductor.
US08716985B2	Power factor correction device and correcting method thereof A power factor correction device comprises a power stage circuit converting input alternating current voltage into input current according to a pulse width modulation signal and outputs the input current to a load generating output voltage on the load, and sampling the input current outputting a correcting current; a current compensating circuit receiving and comparing the correcting current with a reference current signal generating a compensating current signal; a voltage compensating circuit receiving and comparing the output voltage with a reference voltage generating a compensating voltage signal; a multiplication amplifier receiving the compensating current signal and the compensating voltage signal generating an updated reference current signal by multiplying the compensating current signal with the compensating voltage signal; and a pulse width modulation converter receiving the compensating current signal and the compensating voltage signal generating the pulse width modulation signal to synchronize phase of alternating current voltage and input current.
US08716974B2	Resonance type non-contact charging apparatus that matches the input impedance of the resonance system with the output impedance of the AC power source A resonance type non-contact charging system is disclosed that includes a resonance system. The resonance system has a primary side resonance coil, a secondary side resonance coil, a reflected power detecting section, a power converting section having a DC/DC converter, and a battery. The charging system has a controlling section that controls the DC/DC converter. The controlling section controls the duty cycle of the DC/DC converter based on detection result of the reflected power detecting section such that the input impedance of the resonance system at the resonant frequency and the output impedance of a high-frequency power source match each other.
US08716970B2	Method and circuit for controlling motors A method for controlling a motor comprises steps of: first, determining whether a switch of a motor control circuit in an electronic system is in a first state; then, operating the motor at a fanless operation mode when a temperature inside an enclosure of the electronic system is higher than zero and lower than a first threshold temperature, wherein the rotation speed of the motor is zero rpm; operating the motor at a silent operation mode when the temperature is higher than the first threshold temperature and lower than a second threshold temperature, wherein the rotation speed of the motor is a constant rotation speed; and operating the motor at a cooling operation mode when the temperature is higher than the second threshold temperature, wherein the rotation speed of the motor is a function of the temperature and varies between the constant rotation speed and a maximum rotation speed.
US08716968B2	Low cost blender control permitting low actuation force switches A control circuit for a blender provides low-cost power conditioning through the use of a high resistance which provides temporary power for operation of low-voltage logic circuitry and low-voltage switches for a time sufficient to switch the motor on, and a lower resistance which provides sufficient power for maintaining the motor on state indefinitely as instructed by the low-voltage logic circuitry. Low average power dissipation is provided by powering the low-voltage logic circuitry and low-voltage switches using the high resistance in a standby mode and switching in the lower resistance only when the motor is activated.
US08716967B2	Motor control device A motor control device for controlling a three-phase brushless motor that has a rotor and field coils includes: a load range determining unit that determines a rotor rotation angle range, in which the three-phase brushless motor becomes a load, as a load range when a short-circuit fault occurs in one of a plurality of switching elements. The load range determining unit determines a rotor rotation angle range, in which load current is presumed to flow through a closed circuit formed of the short-circuit switching element and any one of regenerative diodes connected in parallel with the respective normal switching elements when the rotor is rotated in a state where all the switching elements other than the short-circuit switching element are turned off, as the load range.
US08716964B2	Motor drive device, and compressor and refrigerator using same Phase correction unit (25) for outputting a commutation signal for switching a winding that allows a current to flow to brushless DC motor (4) and drive unit (16) for outputting a drive signal indicating supplying timing of electric power supplied to brushless DC motor (4) by inverter (3) based on the commutation signal output from phase correction unit (25) are provided so as to maintain a predetermined relation between a phase of a current flowing to a predetermined winding of brushless DC motor (4) and a phase of a voltage. Since brushless DC motor (4) is driven by a signal for holding the predetermined relation between the phase of the current and the phase of the voltage, the stability of drive under high-speed and high-load conditions is enhanced and a drive range is extended.
US08716961B2	Switched reluctance and PM brushless DC motor drive control for electric vehicle application A method of operating an electrical machine having first and second phase windings. The method includes: (1) applying positive first current to the first phase winding while the first phase winding's back electromotive force (emf) is positive; (2) applying negative second current to the first phase winding while the first phase winding's back emf is negative; and (3) applying positive third current to the second phase winding while the second phase winding's back emf is positive. The first current is conducted through a circuit composed of a battery, the first phase winding, and a first switch. The second current is conducted through a circuit composed of a first capacitive storage element, the battery, the first phase winding, and a second switch, and the third current is conducted through a circuit composed of the battery, the second phase winding, and a third switch.
US08716957B2	Powering high-efficiency lighting devices from a triac-based dimmer A circuit for powering high-efficiency lighting devices from a thyristor-controlled dimmer predicts a zero-crossing time of the AC power line supplying the dimmer and causes a glue impedance to be imposed at the output of the dimmer starting at the time of the zero-crossing, so that the timer in the dimmer will operate properly to generate the turn-on event at the correct time. At turn-on, a lower level of impedance is presented to absorb the energy associated with the turn-on event. A higher level of impedance may be presented after the energy is absorbed until all of the energy needed for the cycle is transferred. Then, a high impedance state is maintained until the next zero-crossing time. The impedance control may be provided by non-uniform operation of a power converter that supplies the lighting devices, or by a combination of non-uniform power converter operation and dissipative loading.
US08716954B2	LED drive circuit An LED drive circuit for driving an LED includes a reactor L1, a switch element, a current detection resistor R1 to detect a current of the switch element, a constant current circuit 2 that generates a first control signal to control a current of the switch element to be constant, a disconnection detection circuit 4a that generates a second control signal to keep the switch element OFF if determining that a current equal to or over a predetermined value passes through the switch element when a predetermined time elapses after the timing at which the switch element changes its state from ON to OFF, and a driver of the switch element that drives the switch element and keeps the switch element OFF in case of a disconnection according to the second control signal in priority to the first control signal.
US08716947B2	LED current source digital to analog convertor Various embodiments relate to a method of producing a high precision current using N current mirrors, a feedback control amplifier, and a reference current regulator to drive a light emitting diode, including: selecting one of the N current mirrors as a first current mirror; driving the first current mirror using a reference current produced by the reference current regulator; measuring a first sense voltage at the first current mirror; measuring a second sense voltage at a second current mirror that is one of the remaining N−1 current mirrors; integrating a difference of the first sense voltage and the second sense voltage to produce a feedback signal; and driving the remaining N−1 current mirrors using the feedback signal.
US08716945B2	Light tube and power supply circuit A light tube for illumination by a power supply circuit includes a bulb portion and at least one end cap disposed on the bulb portion. A plurality of light emitting diodes is disposed inside the bulb portion for illuminating in response to electrical current to be received from the power supply circuit. The light emitting diodes are arranged in spaced-apart groupings.
US08716942B2	Managing light system energy use A first lighting assembly receives a lighting profile that instructs the first lighting assembly to operate according to the lighting profile over a first period of time. The received lighting profile is implemented, including causing a light of the first lighting assembly to illuminate at a first intensity. An input acquired in proximity to the first lighting assembly and indicating activity in a region proximate the first lighting assembly is received. The received lighting profile is then deviated from, in response to the received input, by increasing the intensity of the light to illuminate at a second intensity for a predetermined period of time. A message is transmitted for receipt by the control center, the message including an indication of the increased light intensity and an identifier associated with the first lighting assembly.
US08716941B2	Terminal and brightness control method thereof A terminal and a brightness control method thereof are provided. The terminal includes an illumination sensor for measuring peripheral illumination of the terminal, a proximity sensor for detecting an object within a preset distance, a memory for storing a brightness table including data for controlling brightness of a display unit corresponding to the measured illumination, the display unit for displaying and for changing a brightness of the display unit under control of a controller, and the controller for controlling the display unit to change the brightness according to the measured illumination and the brightness table when the object is not detected. The terminal and brightness control method thereof provide a more suitable screen to a user.
US08716936B2	Emergency lighting device for operating a light source, in particular an LED An emergency lighting device (1) for operating a light source, in particular an LED, incorporates an energy storage unit (4), a charging circuit (3) to be supplied with mains supply voltage (Uin) for charging the energy storage unit (4) during a charging operation, wherein the charging circuit (3) has potential isolation, and a driver circuit (5) supplied by the energy storage unit (4) during operation of the emergency light, for operating the light source. A control unit (2) is further provided that is designed to monitor the state of the mains supply voltage (Uin) during the charging operation, and to activate emergency operation upon detecting an emergency state, wherein the control unit (2) determines the state of the mains supply voltage (Uin) from operating parameters of the emergency lighting device (1) measured on the output side of the charging circuit (3).
US08716933B2	Semiconductor device including light emitting element A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) (107) is provided facing a substrate (first substrate) (101) that has a luminous element (102) formed thereon. A PWB side wiring (second group of wirings) (110) on the printed wiring board (107) is electrically connected to element side wirings (first group of wirings) (103, 104) by anisotropic conductive films (105a, 105b). At this point, because a low resistant copper foil is used to form the PWB side wiring (110), a voltage-drop of the element side wirings (103, 104) and a delay of a signal can be reduced. Accordingly, the homogeneity of the quality of an image is improved, and the operating speed of a driver circuit portion is enhanced.
US08716931B2	Organic light emitting diode (OLED) display An organic light emitting diode display includes a substrate main body; an organic light emitting element on the substrate main body; an encapsulation substrate covering the organic light emitting element and coupled to the substrate main body; a translucent insulating layer filter formed on the encapsulation substrate; and a microcavity between the translucent insulating layer filter and the encapsulation substrate.
US08716930B2	Flat panel display device and method thereof A flat panel display device including a display area where an image is displayed and a non-display area located at an outside of the display area includes bank portions arranged in a pattern in the display area and partitioning a plurality of openings, emission elements located in the openings, dummy bank portions formed in the non-display area and integrated therewith, and a sealing passivation layer having a multi-layered structure of organic films and inorganic films alternately arranged, one organic film being located at an interface directly contacting the emission element and one inorganic film located firstly on an outermost portion of the dummy bank portions when the sealing passivation layer extends from the display area to the non-display area.
US08716913B2	Devices and methods for magnetic pole and back iron retention in electromagnetic machines In some embodiments, an electromagnetic machine includes a rotor element configured for movement relative to a stator. The rotor element includes a support member, a backing member, and a magnetic pole assembly. The support member includes a first coupling portion. The backing member is formed, at least in part, from a ferromagnetic material and the magnetic pole assembly is configured to be coupled to the backing member. The magnetic pole assembly and/or the backing member include a second coupling portion configured to removably couple the backing member and the magnetic pole assembly collectively to the first coupling portion of the support member.
US08716912B2	Direct drive rotor with metal coupler A rotor for an outer rotor-type motor is provided. The rotor includes a metallic coupler and a polymeric frame molded over at least part of the metallic coupler.
US08716908B2	Power tool A power tool in the form of an electric disc grinder has a driving motor for driving a grinding wheel that performs a grinding or polishing operation on a workpiece, a motor housing that houses the driving motor, a rear cover that is mounted to a rear end region of the motor housing and forms together with the motor housing a grip to be held by a user, and a power switch including an operating lever that extends longitudinally on both of the motor housing and the rear cover and is operated by gripping with a user's hand, and a switch part that is disposed within the rear cover and actuated by operation of the operating lever to control energization of the driving motor and connected to the operating lever through an opening.
US08716906B2	Electronic circuit device including a noise blocker An electric circuit device operable under a first power supply includes: a first circuit; a switch connecting the first circuit with the first power supply; a second circuit for producing a signal output; a control signal output unit for outputting a control signal in accordance with the signal output of the second circuit, wherein while the first circuit is supplied with a first power supply voltage via the switch by supplying of a driving voltage to the switch, the supply of the driving voltage is temporality cut off in response to the control signal.
US08716904B2	Variable-spectrum high-power electrical pulse generator, and facility and equipment operating such a generator The present disclosure relates to a high-voltage pulse generator including a “frozen-wave” generation system for generating high-voltage pulses and a trigger system for triggering the pulses, the generation system including a first and a second photoconductor element, wherein the triggering system includes means for generating a laser light beam and means for splitting the laser beam into two laser beam fractions, each laser beam fraction being directed onto a photoconductor element of the generation system, the splitting means being capable of controlling the distribution of the respective powers of the two laser beam fractions as a function of the orientation of the polarization of the laser beam. The present disclosure also relates to a facility comprising multiple high-voltage pulse generators and electrooptic pump-probe equipment operating such a high-voltage pulse generator.
US08716903B2	Low AC resistance conductor designs Described herein are improved configurations for providing a stranded printed circuit board trace comprising, a plurality of conductor layers, a plurality of individual conductor traces on each of the said conductor layers, and a plurality of vias for connecting individual conductor traces on different said conductor layers, the vias located on the outside edges of the stranded trace. The individual conductor traces of each layer may be routed from vias on one side of the stranded printed circuit board trace to vias on the other side in a substantially diagonal direction with respect to the axis of the stranded printed circuit board trace. In embodiments, the stranded printed circuit board trace configuration may be applied to a wireless power transfer system.
US08716901B2	Circuit for generating a direct current voltage and method thereof A circuit for generating a direct current voltage includes a three-axis antenna set, a first capacitor, a limiting direct current voltage generator, a second capacitor, and a low dropout regulator. The three-axis antenna set receives a signal transmitted by a reader. The first capacitor generates a first direct current voltage according to an X-axis component, a Y-axis component, and a Z-axis component of the signal. The limiting direct current voltage generator limits and converts the X-axis component, the Y-axis component, and the Z-axis component to generate an X-axis direct current voltage, a Y-axis direct current voltage, and a Z-axis direct current voltage. The second capacitor generates a second direct current voltage according to the X-axis direct current voltage, the Y-axis direct current voltage, and the Z-axis direct current voltage. The low dropout regulator generates a direct current output voltage according to the second direct current voltage.
US08716892B2	Energy storage system and method of controlling the same An energy storage system and a method of controlling the energy storage system, the energy storage system including a power converting unit for converting a voltage output from the power generating system into a direct current (DC) link voltage, a bidirectional converter enabled to perform mutual conversion between an output voltage of the battery and the DC link voltage, a DC link unit for constantly maintaining a level of the DC link voltage, a bidirectional inverter for converting the DC link voltage into an alternating current (AC) voltage appropriate for the grid, and for converting an AC voltage of the grid into the DC link voltage, and an integrated controller for controlling the power converting unit, the bidirectional converter, and the bidirectional inverter, and for controlling operation modes of the energy storage system. In particular, the integrated controller may control operation modes in accordance with the DC link voltage.
US08716889B2	Solar powered electrical generation device and related methods Embodiments relate to a solar electrical power generation device, including one or more prefabricated solar photovoltaic power source units each unit including an adapter to electrically connect to other units, a moveable and adjustable frame supporting at least one of the one or more prefabricated solar photovoltaic power source units and an electrical storage device being capable of storing electrical power generated from the one or more power source units. The frame is moveable from between sites and within a site and adjustable to increase or decrease a unit angle in relation to the sun and wherein the device being capable of connecting to a utility grid or serving as a stand-alone electrical power system.
US08716885B2	Disconnect switch for distributed energy system A switching assembly includes a first terminal and a second terminal, a first switch connected to the first terminal, and a second switch connected to the second terminal. The switching assembly further includes a rectifier bridge connected between the first switch and the second switch, and a third switch connected between the first terminal and the second terminal. The switching assembly also includes a control unit that selectively opens and closes the first switch, the second switch and the third switch, and selectively turns on and off the rectifier bridge.
US08716878B2	Downwind type wind turbine having transformer therein and operating method thereof A downwind type wind turbine having a transformer stored in a support post or in a nacelle includes the nacelle which supports a rotor and stores therein a generator, a support post which supports the nacelle and a main transformer disposed between the generator and an electric power system and the main transformer is stored in the nacelle or in the support post.
US08716876B1	Systems and methods for stacking a memory chip above an integrated circuit chip Systems and methods for stacking a memory chip with respect to an integrated circuit (IC) chip are described. In the systems and methods, a plurality of like memory chips are stacked above one or more IC chip members of a family. The use of a plurality of like memory chips for the family may save costs and complications involved in designing, fabricating, and assembling memory chips of different sizes. The use of a plurality of the memory chips on a single IC chip can enable higher data transfer rates due to parallel data transmission.
US08716873B2	Semiconductor packages and methods of packaging semiconductor devices A device is disclosed. The device includes a carrier substrate having first and second major surfaces. The first surface includes a die region and contact pads and the second surface includes package contacts. The carrier substrate includes a patterned lead frame which defines a line level with conductive traces and a via level with via contacts. The patterned lead frame provides interconnections between the contact pads and package contacts. The carrier substrate further includes a dielectric layer isolating the conductive traces and via contacts. The device includes a die mounted on the die region of the first surface.
US08716869B2	Cell array and density features with decoupling capacitors A method includes defining an array including a plurality of unit cells, receiving unit cell density parameters in a computing apparatus, and defining a plurality of sub-arrays of unit cells using the computing apparatus. The computing apparatus defines density features disposed between adjacent sub-arrays. The computing apparatus generates density feature density parameters based on the unit cell density parameters and at least one density limit.
US08716867B2	Forming interconnect structures using pre-ink-printed sheets A method of forming a device includes printing conductive patterns on a dielectric sheet to form a pre-ink-printed sheet, and bonding the pre-ink-printed sheet onto a side of a substrate. The conductive feature includes a through-substrate via extending from a first major side of the substrate to a second major side of the substrate opposite the first major side. A conductive paste is then applied to electrically couple conductive patterns to a conductive feature in the substrate.
US08716866B2	Semiconductor device An object of the present invention is to solve the problem that the number of pads increases due to high packaging density and the size of semiconductor devices increases due to increase of the pad density. A semiconductor device according to the present invention uses a conductor trace on an interconnection substrate to interconnect two nonadjacent pads.
US08716864B2	Solderless die attach to a direct bonded aluminum substrate A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed.
US08716863B2	Structure and method for high performance interconnect The present disclosure provides an integrated circuit structure. The integrated circuit structure includes a substrate having an IC device formed therein; a first dielectric material layer disposed on the substrate and having a first trench formed therein; and a first composite interconnect feature disposed in the first trench and electrically coupled with the IC device. The first composite interconnect feature includes a first barrier layer disposed on sidewalls of the first trench; a first metal layer disposed on the first barrier layer; and a first graphene layer disposed on the metal layer.
US08716862B2	Integrated circuit including a gate and a metallic connecting line An integrated circuit includes a gate of a transistor disposed over a substrate. A connecting line is disposed over the substrate. The connecting line is coupled with an active area of the transistor. A level difference between a top surface of the connecting line and a top surface of the gate is about 400 Å or less. A via structure is coupled with the gate and the connecting line. A metallic line structure is coupled with the via structure.
US08716858B2	Bump structure with barrier layer on post-passivation interconnect A semiconductor device includes a barrier layer between a solder bump and a post-passivation interconnect (PPI) layer. The barrier layer is formed of at least one of an electroless nickel (Ni) layer, an electroless palladium (Pd) layer or an immersion gold (Au) layer.
US08716855B2	Integrated circuit system with distributed power supply comprising interposer and voltage regulator module An integrated circuit system having an interposer and an integrated circuit with first and second bond pads, the integrated circuit die bonded to the interposer using the first bond pads. The integrated circuit having circuit blocks, that operate at different operating voltages and voltage regulator modules die bonded to the second bond pads of the integrated circuit. The voltage regulator modules converting a power supply voltage to the operating voltage of a respective circuit block and supply the respective operating voltage to the circuit block via the second bond pads.
US08716854B2	Multi-chip package A multi-chip package includes a main substrate; a plurality of first semiconductor chips stacked on an upper surface of the main substrate and having bonding pads which are electrically connected with the main substrate; and a semiconductor package attached to side surfaces of the stacked first semiconductor chips and electrically connected with the main substrate.
US08716849B2	Semiconductor device including one or more stiffening elements A stiffener molded to a semiconductor substrate, such as a lead frame, and methods of molding the stiffener to the substrate are provided. The stiffener is molded to the substrate to provide rigidity and support to the substrate. A stiffener material can comprise a polymeric material molded to the substrate by a molding technique such as transfer molding, injection molding, and spray molding, or using an encapsulating material. One or more dies, chips, or other semiconductor or microelectronic devices can be disposed on the substrate to form a die assembly. The stiffener can be molded to a substrate comprising one or more dies, over which an encapsulating material can be applied to produce a semiconductor die package.
US08716848B2	LED device with conductive wings and tabs Apparatus for increased heat dissipation from a light-emitting diode (LED) die are provided. The apparatus may include a metal member thermally and electrically coupled to the LED die and having one or more wings for heat transfer away from the LED die and/or increased mechanical strength of the metal member. The wings may be flat, sloped, or tiered. For some embodiments, the wings may have holes in them in an effort to increase the structural integrity when combined with a housing, which made be composed of plastic or resin.
US08716835B2	Bipolar transistor A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0
US08716833B2	Semiconductor devices and methods of manufacturing the same A method of manufacturing a semiconductor device including forming on a substrate an insulating interlayer through which a capacitor contact is interposed; forming on the insulating interlayer a first upper electrode having an opening through which the capacitor contact is exposed; forming a first dielectric layer pattern on a lateral wall of the opening; forming a lower electrode on the first dielectric layer pattern formed in the opening and the capacitor contact; forming a second dielectric layer pattern on the lower electrode formed in the opening and the first dielectric layer pattern; and forming on the second dielectric layer pattern a second upper electrode so as to fill the opening and to contact the first upper electrode. The semiconductor device may prevent a lower electrode of a capacitor from collapsing.
US08716829B2	Semiconductor devices with sealed, unlined trenches and methods of forming same A semiconductor device includes unlined and sealed trenches and methods for forming the unlined and sealed trenches. More particularly, a superjunction semiconductor device includes unlined, and sealed trenches. The trench has sidewalls formed of the semiconductor material. The trench is sealed with a sealing material such that the trench is air-tight. First and second regions are separated by the trench. The first region may include a superjunction Schottky diode or MOSFET. In an alternative embodiment, a plurality of regions are separated by a plurality of unlined and sealed trenches.
US08716827B2	Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells Integrated circuits and manufacturing methods are presented for creating diffusion resistors (101, 103) in which the diffusion resistor well is spaced from oppositely doped wells to mitigate diffusion resistor well depletion under high biasing so as to provide reduced voltage coefficient of resistivity and increased breakdown voltage for high-voltage applications.
US08716825B2	Semiconductor structure and manufacturing method for the same A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a well region, a dielectric structure, a first doped layer, a second doped layer and a first doped region. The dielectric structure is on the well region. The dielectric structure has a first dielectric sidewall and a second dielectric sidewall opposite to each other. The dielectric structure includes a first dielectric portion and a second dielectric portion, between the first dielectric sidewall and the second dielectric sidewall. The first doped layer is on the well region between the first dielectric portion and the second dielectric portion. The second doped layer is on the first doped layer. The first doped region is in the well region on the first dielectric sidewall.
US08716822B2	Back-illuminated type solid-state imaging device and method of manufacturing the same A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
US08716820B2	Magnetic memory A memory includes an underlying layer of a ferromagnetic body, a first nonmagnetic layer on the underlying layer, a data memorizing layer laid on the first nonmagnetic layer and made of a ferromagnetic body having perpendicular magnetic anisotropy, a reference layer coupled through a second nonmagnetic layer with the data memorizing layer, and first and second magnetization fixed layers laid underneath the underlying layer to come into contact with the underlying layer. The data memorizing layer includes a magnetization liberalized region having reversible magnetization, and overlapping with the reference layer, a first magnetization fixed region coupled with an end of the magnetization liberalized region, and having a magnetization direction fixed to +z direction by the first magnetization fixed layer, and a second magnetization fixed region coupled with a different end of the magnetization liberalized region, and having a magnetization direction fixed to −z direction by the second magnetization fixed layer.
US08716818B2	Magnetoresistive element and method of manufacturing the same According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.
US08716817B2	Magnetic memory element and nonvolatile memory device According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
US08716815B2	MEMS coupler and method to form the same A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.
US08716810B2	Selective floating body SRAM cell A memory cell has N≧6 transistors, in which two are access transistors, at least one pair [say (N−2)/2] are pull-up transistors, and at least another pair [say (N−2)/2] are pull-down transistors. The pull-up and pull-down transistors are all coupled between the two access transistors. Each of the access transistors and the pull-up transistors are the same type, p-type or n-type. Each of the pull-down transistors is the other type, p-type or n-type. The access transistors are floating body devices. The pull-down transistors are non-floating body devices. The pull-up transistors may be floating or non-floating body devices. Various specific implementations and methods of making the memory cell are also detailed.
US08716808B2	Static random-access memory cell array with deep well regions An integrated circuit including a complementary metal-oxide-semiconductor (CMOS) static random access memory (SRAM) with periodic deep well structures within the memory cell array. The deep well structures are contacted by surface well regions of the same conductivity type (e.g., n-type) in the memory cell array, forming two-dimensional grids of both n-type and p-type semiconductor material in the memory cell array area. Bias conductors may contact the grids to apply the desired well bias voltages, for example in well-tie regions or peripheral circuitry adjacent to the memory cell array.
US08716804B2	Device and methods for small trench patterning A semiconductor device and methods for small trench patterning are disclosed. The device includes a plurality of gate structures and sidewall spacers, and an etch buffer layer disposed over the sidewall spacers. The etch buffer layer includes an overhang component disposed on the upper portion of the sidewall spacers with an edge that extends laterally. The width between the edges of adjacent overhang components is narrower than the width between adjacent sidewall spacers.
US08716802B2	Semiconductor device structure and fabricating method thereof A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS) transistor region. The resistor is disposed on the substrate within the resistor region. The resistor includes a first dielectric layer, a metal layer, a second dielectric layer, and a semiconductor layer sequentially stacked on the substrate. The first gate structure is disposed on the substrate within the MOS transistor region. The first gate structure includes the first dielectric layer, the metal layer, and the semiconductor layer sequentially stacked on the substrate.
US08716800B2	Semiconductor structure and method for manufacturing the same Semiconductor structure and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device is formed on an SOI substrate comprising an SOI layer, a buried insulating layer, a buried semiconductor layer and a semiconductor substrate from top to bottom, and comprises: source/drain regions formed in the SOI layer; a gate formed on the SOI layer, wherein the source/drain regions are located at both sides of the gate; a back gate region formed by a portion of the buried semiconductor layer which is subjected to resistance reduction; and a first isolation structure and a second isolation structure which are located at both sides of the source/drain regions and extend into the SOI substrate; wherein the first isolation structure and the second isolation structure laterally adjoin the SOI layer at a first side surface and a second side surface respectively; the first isolation structure laterally adjoins the buried semiconductor layer at a third side surface; and the third side surface is located between the first side surface and the second side surface.
US08716799B2	MOSFET The present application discloses a MOSFET and a method for manufacturing the same, wherein the MOSFET comprises: an SOI wafer, which comprises a semiconductor substrate, a buried insulator layer, and a semiconductor layer, the buried insulator layer being disposed on the semiconductor substrate, and the semiconductor layer being disposed on the buried insulator layer; a gate stack, which is disposed on the semiconductor layer; a source region and a drain region, which are disposed in the semiconductor layer and on opposite sides of the gate stack; and a channel region, which are disposed in the semiconductor layer and sandwiched by the source region and the drain region, wherein the MOSFET further comprises a back gate disposed in the semiconductor substrate, and wherein the back gate comprises first, second and third compensation doping regions, the first compensation doping region is disposed under the source region and the drain region; the second compensation doping region extends in a direction away from the channel region and adjoining the first compensation doping region; and the third compensation doping region is disposed under the channel region and adjoining the first compensation doping region. By changing the doping type of the back gate, the MOSFET can have an adjustable threshold voltage, and can have a reduced parasitic capacitance and a reduced contact resistance in connection with the back gate.
US08716798B2	Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors A method for fabricating recessed source and recessed drain regions of aggressively scaled CMOS devices. In this method a processing sequence of plasma etch, deposition, followed by plasma etch is used to controllably form recessed regions of the source and the drain in the channel of a thin body, much less than 40 nm, device to enable subsequent epitaxial growth of SiGe, SiC, or other materials, and a consequent increase in the device and ring oscillator performance. A Field Effect Transistor device is also provided, which includes: a buried oxide layer; a silicon layer above the buried oxide layer; an isotropically recessed source region; an isotropically recessed drain region; and a gate stack which includes a gate dielectric, a conductive material, and a spacer.
US08716794B2	SOI lateral MOSFET devices The present invention relates to a semiconductor power device and power integrated circuits (ICs). The lateral SOI MOSFET in the present comprises a trench gate extended to the dielectric buried layer, one or multiple dielectric trenches in the drift region, and a buried gate in said dielectric trench. The permittivity of the dielectric in said dielectric trench is lower than that of said active layer. Firstly, said dielectric trench not only greatly improves breakdown voltage, but also reduces pitch size. Secondly, the trench gate widens the effective conductive region in the vertical direction. Thirdly, dual gates of said trench gate and buried gate increase channel and current densities. Thereby, specific on-resistance and the power loss are reduced. The device of the present invention has many advantages, such as high voltage, high speed, low power loss, low cost and ease of integration. The device in the present invention is particularly suitable for power integrated circuits and RF power integrated circuits.
US08716788B2	Semiconductor device with self-charging field electrodes Disclosed is a semiconductor device including a drift region of a first doping type, a junction between the drift region and a device region, and at least one field electrode structure in the drift region. The field electrode structure includes a field electrode, a field electrode dielectric adjoining the field electrode and arranged between the field electrode and the drift region, and having an opening, at least one of a field stop region and a generation region.
US08716787B2	Power semiconductor device and fabrication method thereof A fabrication method of a power semiconductor device is provided. Firstly, a plurality of trenched gate structures is formed in the base. Then, a body mask is used for forming a pattern layer on the base. The pattern layer has at least a first open and a second open for forming at least a body region and a heavily doped region in the base respectively. Then, a shielding structure is formed on the base to fill the second open and line at least a sidewall of the first open. Next, a plurality of source doped regions is formed in the body region by using the pattern layer and the shielding structure as the mask. Then, an interlayer dielectric layer is formed on the base and a plurality of source contact windows is formed therein to expose the source doped regions.
US08716785B2	Method and system for metal gate formation with wider metal gate fill margin A method includes providing a semiconductor substrate having a gate trench and depositing a metal layer, using a physical vapor deposition (PVD) process, over the substrate to partially fill the trench. The metal layer includes a bottom portion and a sidewall portion that is thinner than the bottom portion. The method also includes forming a coating layer on the metal layer, etching back the coating layer such that a portion of the coating layer protects a portion of the metal layer within the trench, and removing the unprotected portion of the metal layer. A different aspect involves a semiconductor device that includes a gate that includes a trench having a top surface, and a metal layer formed over the trench, wherein the metal layer includes a sidewall portion and a bottom portion, and wherein the sidewall portion is thinner than the bottom portion.
US08716784B2	Semiconductor device and associated fabrication method A semiconductor device and a method for forming the semiconductor device wherein the semiconductor comprises: a trench MOSFET, formed on a semiconductor initial layer, comprising a well region, wherein the semiconductor initial layer has a first conductivity type and wherein the well region has a second conductivity type; an integrated Schottky diode next to the trench MOSFET, comprising a anode metal layer contacted to the semiconductor initial layer; a trench isolation structure, coupled between the trench MOSFET and integrated Schottky diode, configured to resist part of lateral diffusion from the well region; wherein the well region comprises an overgrowth part which laterally diffuses under the trench isolation structure and extends out of it.
US08716775B2	Semiconductor integrated circuit having reservoir capacitor A semiconductor integrated circuit including a large capacity reservoir capacitor to provide suitable power is provided. The semiconductor integrated circuit includes a semiconductor substrate in which a cell area and a peripheral circuit area are defined, a MOS capacitor formed on the semiconductor substrate corresponding to the peripheral circuit area, and a dummy capacitor group formed on the peripheral circuit area to overlap the MOS capacitor. One electrode of the MOS capacitor and one electrode of the dummy capacitor group are connected to each other and the other electrode of the MOS capacitor and the other electrode of the dummy capacitor group are connected to difference voltage sources from each other.
US08716774B2	Semiconductor device having a buried gate type MOS transistor and method of manufacturing same A semiconductor device includes a semiconductor substrate having a first gate groove having first and second sides opposite to each other; a first diffusion region underneath the first gate groove; a second diffusion region in the semiconductor substrate, the second diffusion region covering an upper portion of the first side of the first gate groove; and a third diffusion region in the semiconductor substrate. The third diffusion region covers the second side of the first gate groove. The third diffusion region is coupled to the first diffusion region. The third diffusion region has a bottom which is deeper than a bottom of the first gate groove. The bottom of the third diffusion region is different in level from the bottom of the first diffusion region.
US08716773B2	Dynamic memory device with improved bitline connection region A semiconductor device includes a semiconductor substrate having a memory cell region and a peripheral circuit region; a bit line extending over the memory cell region and the peripheral circuit region, the bit line including a first portion in the peripheral circuit region; and a sense amplifier in the peripheral circuit region. The sense amplifier includes a transistor having a gate electrode which includes the first portion of the bit line.
US08716772B2	DRAM cell design with folded digitline sense amplifier The present invention is generally directed to a DRAM cell design with folded digitline sense amplifier. In one illustrative embodiment, a memory array having a plurality of memory cells having an effective size of 6F2 is disclosed which has a plurality of dual bit active areas, each of the active areas having a substantially longitudinal axis, and a plurality of digitlines arranged in a folded digitline architecture, wherein the active areas are positioned such that the longitudinal axis of the active areas is oriented at an angle with respect to a centerline of the digitlines.
US08716771B2	Anti-reflection structures for CMOS image sensors Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
US08716769B2	Image sensors including color adjustment path An image sensor includes a transfer transistor including a vertical gate portion extending in a depth direction of a substrate in an active region of the substrate and photodiode regions located at positions of different depths with respect to a top surface of the substrate in the active region. At least one color adjustment path extends between at least two photodiode regions of the photodiode regions and provides a charge movement path between the at least two photodiode regions.
US08716768B2	Transistor with self-aligned channel width A device includes a transistor including a source and a drain disposed in a substrate and a gate disposed above the substrate. The gate includes a first longitudinal member disposed above the source and the drain and running substantially parallel to a channel of the transistor. The first longitudinal member is disposed over a first junction isolation area. The gate also includes a second longitudinal member disposed above the source and the drain and running substantially parallel to the channel of the transistor. The second longitudinal member is disposed over a second junction isolation region. The gate also includes a cross member running substantially perpendicular to the channel of the transistor and connecting the first longitudinal member to the second longitudinal member. The cross member is disposed above and between the source and the drain.
US08716767B2	Compliant bipolar micro device transfer head A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.
US08716765B2	Contact structure of semiconductor device A contact structure for a semiconductor device includes a substrate comprising a major surface and a cavity. A bottom surface of the cavity is lower than the major surface. The contact structure also includes a strained material in the cavity, and a lattice constant of the strained material is different from lattice constant of the substrate. The contact structure also includes a first metal layer over the strained material, a dielectric layer over the first metal layer, and a second metal layer over the dielectric layer. The dielectric layer has a thickness ranging from 1 nm to 10 nm.
US08716764B2	Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method thereof are provided. The fin semiconductor device includes a fin formed on a substrate and an insulating material layer formed on the substrate and surrounding the fin. The fin has a semiconductor layer that has a source region portion and a drain region portion. The fin includes a first channel control region, a second channel control region, and a channel region between the two channel control regions, all of which are positioned between the source region portion and the drain region portion. The two channel control regions may have the same conductivity type, different from the channel region.
US08716761B2	Image sensor for semiconductor light-sensitive device, manufacturing thereof, image processing apparatus using the same, and method for detecting color signal An image sensor for a semiconductor light-sensitive device including a semiconductor substrate and a light receiving device configured to receive light and generate a signal from the light. The image sensor may include an electron collecting device formed in the semiconductor substrate to receive at least a portion of the electrons generated by the light in the light receiving device. The image sensor may include a first type device isolation film configured to isolate the light receiving device from the electron collecting device. The image sensor may include a shielding film formed over the semiconductor substrate and configured to shield the first electron collecting device from the light.
US08716752B2	Structure and method for making a strained silicon transistor A graded SiGe sacrificial layer is epitaxially grown overlying a silicon substrate. A single crystal silicon layer is then grown by an epitaxial process overlying the graded SiGe layer. A SiGe layer is next grown by an epitaxial process as a single crystal layer overlying the silicon layer. A subsequent silicon layer, which becomes the active silicon layer for the transistors, is epitaxially grown overlying the second silicon germanium layer. Together the epitaxially grown Si, SiGe and Si layers form a laminate semiconductor structure. A MOS transistor is then formed on the active area of the single crystal silicon. The graded SiGe sacrificial layer is removed by an etch process to electrically isolate the laminate semiconductor structure from the substrate.
US08716751B2	Methods of containing defects for non-silicon device engineering An apparatus including a device including a channel material having a first lattice structure on a well of a well material having a matched lattice structure in a buffer material having a second lattice structure that is different than the first lattice structure. A method including forming a trench in a buffer material; forming an n-type well material in the trench, the n-type well material having a lattice structure that is different than a lattice structure of the buffer material; and forming an n-type transistor. A system including a computer including a processor including complimentary metal oxide semiconductor circuitry including an n-type transistor including a channel material, the channel material having a first lattice structure on a well disposed in a buffer material having a second lattice structure that is different than the first lattice structure, the n-type transistor coupled to a p-type transistor.
US08716750B2	Semiconductor device having epitaxial structures A semiconductor device having epitaxial structures includes a gate structure positioned on a substrate, epitaxial structures formed in the substrate at two sides of the gate structure, and an undoped cap layer formed on the epitaxial structures. The epitaxial structures include a dopant, a first semiconductor material having a first lattice constant, and a second semiconductor material having a second lattice constant, and the second lattice constant is larger than the first lattice constant. The undoped cap layer also includes the first semiconductor material and the second semiconductor material. The second semiconductor material in the epitaxial structures includes a first concentration, the second semiconductor material in the undoped cap layer includes at least a first concentration, and the second concentration is lower than the first concentration.
US08716747B2	Semiconductor device A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime controlled region has a first lifetime controlled region located in the diode region and a second lifetime controlled region located in a part of the IGBT region. The second lifetime controlled region extends from a boundary of the diode region and the IGBT region toward the IGBT region. In the plan view, a tip of the second lifetime controlled region is located in a forming area of the body region in the IGBT region.
US08716742B2	Light emitting device for AC operation A light emitting device includes a substrate, a plurality of rectifier diodes, and at least one light emitting diode (LED) module. The substrate has a first cavity, a second cavity, and a third cavity formed thereon. The rectifier diodes are arranged in the first cavity and the third cavity respectively. The LED module is arranged in the second cavity. The LED module includes a plurality of LEDs. The light emitting device is capable of rectifying and converting an alternating current (AC) power supply to drive the LEDs to emit light.
US08716739B2	Optical electronic package with an optically isolated chamber A package includes a substrate with an attached emitting IC chip and receiving IC chip. The emitting IC chip includes an optical emitter, and the receiving IC chip includes a main optical sensor and a secondary optical sensor. A case is provided with a bottom portion and a peripheral wall portion to cover the IC chips, wherein the edge of the peripheral wall portion is mounted to the substrate. The bottom portion of the case includes a main opening above the main optical sensor and a secondary opening above the optical emitter. An opaque material is interposed between the case and the receiving IC chip to isolate the main optical sensor from the secondary optical sensor and delimiting a chamber containing the secondary optical sensor and the optical emitter. The chamber is optically isolated from the main optical sensor and main opening, and may be filled with a transparent material.
US08716736B2	Surface light emitting device The surface light emitting device includes an organic EL element, a protection substrate, a protection part, and a light extraction structure part. The element has a first face and a second face opposite to the first face, and emits light from the first face. The substrate has transparency for light emitted from the element, and is placed facing the first face, and has a primary surface facing the first face of the element. The protection part is placed facing the second face of the element, and constitutes a housing in combination with the substrate and accommodates the element so as to protect the element from water. The structure part is interposed between the first face of the element and the substrate, and suppresses reflection of light emitted from the element on at least one of the first face of the element and the primary surface of the substrate.
US08716734B2	Light emitting diode package having a portion of reflection cup material covering electrode layer on side surfaces of substrate An LED package includes a substrate, an electrode layer, a light-emitting chip, a reflection cup and an encapsulation. The substrate includes a first surface, an opposite second surface, and two side surfaces. The electrode layer is consisted of a positive electrode and a negative electrode, each of which extends from the first surface to the second surface via a respective side surface. The light-emitting chip is located on the first surface of the substrate and electrically connected to the electrode layer. The reflection cup comprises a first part covering the electrode layer on the side surfaces of the substrate, a second part with a bowl-like shape on the first surface of the substrate and surrounding the light-emitting chip. The encapsulation is filled in the second part of the reflection cup.
US08716732B2	Light emitting element A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.
US08716731B2	Tunable phosphor for luminescent The present disclosure provides an illuminating system including a light emitting diode (LED); and a tunable luminescent material disposed approximate the light-emitting diode, wherein the tunable luminescent material includes alkaline earth metal (AE) and silicon aluminum nitride doped by a rare earth element (RE), formulated as (AE)Si6−pAlpN8, wherein p is a parameter defining a relative aluminum content in weight and p is greater than zero.
US08716729B2	Lighting device A lighting device (1) comprises at least one element (2) emitting light which is at least in part visible, and at least one conversion medium (3), which converts at least part of the radiation emitted by the element (2) into radiation of another frequency. In addition, the lighting device (1) comprises at least one filter medium (4) which filters at least part of the radiation, and which is configured such that the quantity of the conversion medium (4) to be used is reduced for at least one predetermined color saturation and/or one predetermined hue. This means that, compared with a light source corresponding to the lighting device (1) apart from the filter medium (4), savings are made in conversion medium (3) while achieving the same color saturation or the same hue. Light of a predetermined color saturation or of a predetermined hue may be efficiently generated by such a lighting device (1) and the lighting device (1) may be inexpensively produced. In operation, it also has high light intensities and a long service life.
US08716724B2	Optoelectronic projection device An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.
US08716719B2	Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus Provided is a solid-state imaging device including: a first-conductivity-type substrate; a second-conductivity-type well formed in a surface side of the first-conductivity-type substrate; a photoelectric conversion area configured with a first-conductivity-type-impurity area formed in the second-conductivity-type well to convert incident light to charges; a first-conductivity-type-charge retaining area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to retain the charges converted by the photoelectric conversion area until the charges are read out; a charge voltage conversion area configured with the first-conductivity-type-impurity area formed in the second-conductivity-type well to convert the charges retained in the charge retaining area to a voltage; and a first-conductivity-type-layer area configured by forming a first-conductivity-type-in a convex shape from a boundary between the first-conductivity-type substrate and the second-conductivity-type well to a predetermined depth of the surface side under at least one portion of the charge retaining area and the charge voltage conversion area.
US08716715B2	Thin film transistor substrate A thin film transistor substrate including a thin film transistor having a drain electrode with an electrode portion, which overlaps with a semiconductor layer, and an extended portion, which extends from the electrode portion and has a portion overlapping with a storage electrode or storage electrode line. A passivation layer is arranged on the drain electrode, and it has a contact hole that partially exposes the extended portion of the drain electrode without exposing a step in the extended portion caused by the storage electrode or storage electrode line. A pixel electrode is arranged on the passivation layer and is electrically connected with the extended portion of the drain electrode through the contact hole.
US08716711B2	Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
US08716709B2	Display device The present invention provides an inexpensive display device that includes an ion sensor portion and a display and that can be miniaturized. The present invention is a display device that includes an ion sensor portion including an ion sensor circuit and a display including a display-driving circuit. The display device has a substrate, and at least one portion of the ion sensor circuit and at least one portion of the display-driving circuit are formed on the same main surface of the substrate.
US08716708B2	Semiconductor device and method for manufacturing the same Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion of a drain electrode layer (and the vicinity of an end portion of a source electrode layer) when a high gate voltage is applied to a gate electrode layer is reduced and degradation of switching characteristics is suppressed, so that the reliability is improved. The cross-sectional shape of an insulating layer which overlaps over a channel formation region is a tapered shape. The thickness of the insulating layer which overlaps over the channel formation region is 0.3 μm or less, preferably 5 nm or more and 0.1 μm or less. The taper angle θ of a lower end portion of the cross-sectional shape of the insulating layer which overlaps over the channel formation region is 60° or smaller, preferably 45° or smaller, further preferably 30° or smaller.
US08716707B2	Electronic device A device is prepared using a chemical vapor deposition method and has a patterned thin film on a substrate that is applied using a deposition inhibitor material. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material can be patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
US08716702B2	Organic light-emitting display device and method of manufacturing the same An organic light-emitting display device includes: a buffer layer including sequentially stacked materials having different refractive indexes on a substrate; source and drain electrodes on the buffer layer; a first active layer of a thin film transistor between the source and drain electrodes, and a second active layer spaced from the first active layer at a same layer as and including a same material as the first active layer; a first insulation layer on the buffer layer, the source and drain electrodes, the first and second active layers, and including sequentially stacked materials having different refractive indexes; a first gate electrode corresponding to a center region of the first and second active layers with the first insulation layer therebetween, and a pixel electrode at a same layer as and comprising a same material as the first gate electrode; and a second gate electrode on the first gate electrode.
US08716697B2	Electronic devices made with crosslinkable compounds and copolymers The present disclosure relates to electronic devices comprising at least one layer comprising novel cross-linkable polymers. The compounds can function as monomers, and copolymers can be formed from such monomers, such copolymers comprising, as polymerized units, a plurality of units of the compounds. The compositions are especially useful when incorporated into charge transport layers and light-emitting layers of a wide variety of electronic devices.
US08716696B2	Organic semiconductor thin film transistor and method of fabricating the same A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode.
US08716689B2	Thermal diode device and methods A thermal diode comprising a superlyophobic surface, and a lyophilic surface separated from the superlyophobic surface defining a chamber. A liquid is disposed in the chamber, the liquid capable of phase changing during operation of the thermal diode. Methods of cooling and insulating bodies and rectifying heat transfer using the thermal diode.
US08716688B2	Electronic device incorporating memristor made from metallic nanowire An electronic device includes a first electrode, a second electrode and a nanowire connected between the first and second electrodes to allow electric current flow. The nanowire is made from a conductive material exhibiting a variable resistance due to electromigration. The nanowire is repeatably switchable between two states. A voltage clamp operates through feedback control to maintain the voltage across the nanowire and prevent thermal runaway.
US08716686B2	Canister for transporting and/or storing radioactive materials conferring enhanced heat transfer A canister for transporting and/or storing radioactive materials, the canister comprising two concentric shells between which is housed a radiological protection device comprising at least a first and a second metal components adjacent along a circumferential direction. According to the invention, the first component is supported against the outer shell and at a distance from the inner shell, whereas the second component is supported against the shell and at a distance from the shell. In addition, the components are in contact with each other along an interface taking, in section along any plane orthogonal to the longitudinal axis and crossing this interface, the form of a straight line segment defining with a radial straight line crossing it at its centre an acute angle (A).
US08716683B2	Ion beam processing system and sample processing method An ion beam processing system (100) processes the sample (S) mounted on a sample stage (30) by irradiating the sample with an ion beam in a sample chamber (2). The system has a sample container (20) including a cover portion (26) formed to be detachably mountable to a base portion (24), the sample stage (30) on which the container (20) is detachably mountable, and cover mounting/dismounting apparatus (40) for mounting and dismounting the cover portion (26) from outside the sample chamber (2).
US08716681B1	Sample processing method In one embodiment, a sample processing method includes placing a sample on a sample placing module, and setting first processing boxes on one side of slice formation scheduled regions of the sample, and second processing boxes on the other side thereof. The method includes processing the sample by performing a primary scan which sequentially scans the first processing boxes with a continuously generated ion beam, and a secondary scan which sequentially scans the second processing boxes with a continuously generated ion beam, to form slices of the sample. The primary and secondary scans are performed so that a first scanning condition for scanning first regions within the first and second processing boxes is set different from a second scanning condition for scanning second regions between the first processing boxes and between the second processing boxes, to allow frame portions of the sample to remain in the second regions.
US08716680B2	System and method for reducing trapped energetic proton or energetic electron flux at low earth orbits A system and method for improving the survivability of space systems following a High Altitude Nuclear Explosion (HANE) incident resulting in energetic electrons being trapped in the inner radiation belt of Earth is disclosed. The ULF electromagnetic waves is generated by space or ground based transmitters and the frequency range is selected such that the injected waves are in gyrofrequency resonance with trapped energetic particles. The Radiation Belt Remediation (RBR) depends on the wave-number of the injected waves and the wave-number of the injected waves increases along their propagation path when they approach the cyclotron frequency of the dominant or minority ions 0+, He+ and H+.
US08716667B2	Switching apparatus, switching method, and electronic device The present invention relates to a switching apparatus, a switching method, and an electronic device with which it is possible to detect whether or not a proximal object is a human skin.
US08716657B2	High sensitivity mass spectrometry systems A high sensitivity desorption electrospray ionization mass spectrometry system that employs a heated platform, along with means for directing a liquid stream containing an analyte of interest onto a target location on the heated platform to heat the stream, an electrospray emitter for generating an electrospray and directing the electrospray at the target location on the heated platform to produce an ionized, desorbed analyte, and a mass spectrometer for receiving and detecting the ionized, desorbed analyte.
US08716655B2	Integrated ion separation spectrometer An apparatus including an ion injector having an inlet and an outlet and a micro-corona ionizer positioned between the inlet and the outlet of the ion injector. A drift and separation channel having a first end and a second end is positioned with the first end coupled to outlet of the ion injector, and an ion detector is coupled to the second end of the ion separation and drift channel. Other embodiments are disclosed and claimed.
US08716653B2	Sample analysis and ion detection Various embodiments of ion detection systems, devices, and associated methods of operation are described herein. In one embodiment, a method for ion detection includes separating a target species from other species in an ionized sample of a first polarity, generating ions of a second polarity opposite the first polarity, and contacting ions of the second polarity with the ionized sample to generate emissions after separating the target species from other species in the ionized sample. The method also includes detecting the generated emissions when combining the ionized sampled of the first polarity with the ions of the second polarity.
US08716652B2	Method for homogenization of the threshold values of a multi-channel, quanta-counting radiation detector A method is disclosed for homogenization of threshold values of a multichannel, quanta-counting radiation detector. In an embodiment of the method empty measurements are carried out with the detector at different spectral compositions of the radiation with different settings of threshold values of the comparators. For each channel of which the comparators is to be set to the same energy threshold, an adapted threshold value is determined for this energy threshold from the empty measurement, at which a variation of the normalized count rate of the channel is minimized over the different spectral compositions of the radiation. This avoids problems in the further processing of the measurement data of the detector, which can occur during alterations of the spectrum.
US08716650B2	Nuclear gauges and related methods of assembly Nuclear gauges, their components and method for assembly and adjustment of the same are provided. The nuclear gauges are used in measuring the density and/or moisture of construction-related materials. The nuclear gauge can include a gauge housing having a vertical cavity therethrough and at least one radiation detector located within the housing. The nuclear gauge can include a vertically moveable source rod and a radiation source operatively positioned within a distal end of the source rod.
US08716648B2	Photon detection system and method of photon detection According to one embodiment, a photon detection system determines the number of detected photons. The detection system includes an avalanche photodiode and a measuring unit. The measuring unit measures an avalanche signal induced by illumination before the avalanche current through the device has saturated.
US08716647B2	Analog silicon photomultiplier using phase detection An analog silicon photomultiplier system includes at least one analog pixel comprising a plurality of analog photodiodes (APDs), and a capacitor, a signal generator, a phase detector, and a compensation network. The signal generator is configured to generate and propagate a sinusoidal signal concurrently along first and second transmission lines. A capacitor is loaded on the first transmission line when an APD corresponding to the capacitor detects a photon. The phase detector is coupled with the first and second transmission lines, determines a phase difference between the first transmission line and the second transmission line and calculates a number of APDs that have fired from the phase difference. The compensation network is coupled with the second transmission line and the phase detector, and comprises a plurality of compensation capacitors, wherein the compensation capacitors are loaded on the second transmission line in proportion to the number of APDs that have fired.
US08716646B2	Photoelectric conversion device and method for operating the same In a photoelectric conversion device including a photodiode and a current mirror circuit, a diode-connected transistor is provided in parallel with the photodiode. The transistor serves as a leakage path for rapidly discharging charge stored in the gate capacitance in the current mirror circuit. Thus, the response speed of the photoelectric conversion device is increased, and output of an abnormal value is reduced.
US08716633B2	Method for manufacturing PTC device and system for preventing overheating of planar heaters using the same Disclosed are a method for manufacturing a positive temperature coefficient (PTC) device and a system for preventing overheating of a planar heater using the same. The manufacturing of the positive temperature coefficient (PTC) device is performed by mixing one or more polymer resins selected from ethylene butyl acrylate copolymers, ethylene vinyl acetate copolymers and polyethylene oxide, carbon black and an additive to prepare a compounding composition, adhering an electrode to both surfaces of the compounding composition, compressing the resulting electrode structure into a sheet, and irradiating electron beams to the sheet to perform cross-linking. Also, disclosed is a planar heater overheating prevention sensor cable obtained by connecting a plurality of PTC devices in series and adhering the devices to the surface of a planar heater by a predetermined distance. The PTC overheating prevention sensor cable is bent in one direction and adhered to a region in which a planar heater is arranged, thus having a structure in which the PTC devices are randomly dispersed in the form of a dot. The system for preventing overheating of a planar heater controls electric current transfer of the planar heater, when overheating occurs in or around the region in which PCT devices are adhered due to abnormal operation and thus prevents the overheating, thereby exhibiting improved safety, high installment and construction efficiency, decreased energy loss and superior durability.
US08716629B2	Temperature sensor for body temperature measurement This invention relates to a temperature sensor for body temperature measurements. The temperature sensor is made of several layers, where a first layer has a central heater embedded therein, a second layer which is attached to the first layer has at least one first thermistor embedded therein for measuring a first temperature value, a third layer has at one ore second thermistor embedded therein separated from the first thermistor for measuring at least one second temperature value, but this third layer is adapted to be in contact to the skin of the surface of the body for conducting the heat escaping from the body through the layers. The difference between the first and the second temperature values indicates the heat flux from the body. The heat emitted from central heater is tuned oppositely to the heat flux until a zero heat flux is reached, where the temperature at the at least one second thermistor at zero heat flux indicates the body temperature. These layers are fabric layers.
US08716625B2	Workpiece cutting In some aspects, methods includes forming intersecting apertures in a workpiece with a laser beam by moving the laser beam along intersecting line paths, and cutting out a portion of a shape from the workpiece by moving the laser beam along a continuous final path extending around an intersection point of the intersecting line paths.
US08716624B2	Method for forming tubular beam with center leg A roll former for forming a sheet into a continuous multi-tubular reinforcement beam. The roll former includes a first set of rollers that are configured to bend the sheet to form a common center wall in generally perpendicular orientation relative to first and second lateral portions of the sheet that extend in opposing directions from respective first and second radiused ends of the common center wall. The first set of rollers also form radiused edges on the first and second lateral portions. A second set of rollers is configured to form a channel rib longitudinally along each of the first and second lateral portions. A third set of rollers is configured to bend the first and second lateral portions simultaneously and equally to abut the first and second radiused edges with the respective first and second radiused ends of the common center wall to define adjacent tubes of the beam.
US08716622B2	Apparatus and method for performing laser welding operations A laser welding apparatus and method reproduces a welding state substantially identical to an actual operation of a robot at a manufacturing site even when an operating speed of the robot is changed. When a moving speed of the robot is, for example, 50% of an override ratio, a welding point speed, which is a resultant speed of a focus moving speed of the laser beam by movement of the robot having a scanner head and the focus moving speed of the laser beam by rotation of the laser scanning mirror, becomes identical to that when an override ratio is 100%. This is achieved by increasing a rotating speed of a laser scanning mirror within the scanner head.
US08716621B2	Head for the continuous precision machining on three-dimensional bodies and machining equipment that comprises said head A head for the continuous precision machining on three-dimensional bodies includes a fastening means to a flange of a machining equipment, having a first mechanical rotation axis, an intermediate means having a second mechanical rotation axis in series to the first mechanical rotation axis. The second mechanical rotation axis is orthogonal to the first mechanical rotation axis which intersects at a point of intersection. A terminal processing means has in series with the first and second mechanical rotation axes a third mechanical translating axis. The intermediate means has an arc configuration of a circumference with its centre at the point of intersection. The first mechanical rotation axis and the third mechanical translating axis are radially oriented to the arc.
US08716619B2	MEMS switch A MEMS switch in which at least first, second and third signal lines are provided over the substrate, which each terminate at a connection region. A lower actuation electrode arrangement is over the substrate. A movable contact electrode is suspended over the connection regions for making or breaking electrical contact between at least two of the three connection regions and an upper actuation electrode provided over the lower actuation electrode. The use of three of more signal lines enables a symmetrical actuation force to be achieved or enables multiple switch functions to be implemented by the single movable electrode, or both.
US08716609B2	Weighing apparatus and roll-off truck, and associated method An improved method of determining the weight of the contents of a container involves using a roll-off truck's own container loading system to remove a container from a number of weight measure elements. Another improved method of weighing the contents of a container involves employing support elements which enable a container that is engaged with the number of weight measurement elements to be lowered out of engagement with such weight measurement elements. An improved weighing apparatus includes a number of weight measurement elements and a number of support elements. Such an improved weighing apparatus can be retrofitted onto an existing truck to provide an improved truck on which such methods can be performed.
US08716605B2	Structure for shorting line connecting signal lines of flat panel display device A shorting line connecting first and second signal lines arranged in parallel with each other in a flat panel display device is disclosed. The shorting line includes a first branch portion connected with the first signal line and branched from the first signal line toward the second signal line; a second branch portion connected with the second signal line and extended from the second signal line toward the first signal line; and a connection portion connecting the first branch portion to the second branch portion, wherein one end of the connection portion is connected with the first branch portion at a first angle, and another end of the connection portion is connected with the second branch portion at a second angle.
US08716604B2	Metal core wiring board and electric junction box having the same An electric junction box including a metal core wiring board having a high heat-releasing property is provided. The electric junction box includes a case and a metal core wiring board received inside the case. The metal core wiring board includes a base plate and a plurality of relays. The base plate is constituted of a pair of insulation sheets sandwiching respective body portions of two conductive plates and body portions of a plurality of conductive plates. The each conductive plate has a terminal portion formed continuously from the body portion and arranged to project from edge of the insulation sheet. The conductive plates are made of copper alloy including copper and at least one of iron, nickel, tin and zirconium.
US08716603B2	Printed wiring board with dielectric material sections having different dissipation factors An apparatus including a first printed wiring board section and a second printed wiring board section. The first printed wiring board section includes a first dielectric material layer. The first dielectric material layer has a first dissipation factor. The second printed wiring board section is directly attached with the first printed wiring board section to form a unitary printed wiring board structure. The second printed wiring board section includes a second dielectric material layer and an antenna on the second dielectric material layer. The second dielectric material layer has a different second dissipation factor.
US08716601B2	Corona resistant high voltage bushing assembly A corona resistant high voltage bushing assembly includes an insulating sleeve to surround a conductor, a flange located on an outside surface of the insulating sleeve, and a first band of semiconductive glaze located on the outer surface of the insulating sleeve spaced apart from an end of the insulating sleeve.
US08716596B1	Solar cell having silicon nano-particle emitter A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.
US08716594B2	High efficiency photovoltaic cells with self concentrating effect Novel structures of photovoltaic cells (also called as solar cells) are provided. The Cells are based on the micro (or nano) structures which could not only increase the surface area but also have the capability of self concentrating the solar spectrum incident onto the cell. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.
US08716591B2	Array of monolithically integrated thin film photovoltaic cells and associated methods A process of forming an array of monolithically integrated thin film photovoltaic cells from a stack of thin film layers formed on an insulating substrate includes forming at least one cell isolation scribe in the stack of thin film layers. A second electrical contact layer isolation scribe is formed for each cell isolation scribe adjacent to a respective cell isolation scribe. A via scribe is formed in the stack of thin film layers between each cell isolation scribe and its respective second electrical contact layer isolation scribe. Insulating ink is disposed in each cell isolation scribe, and conductive ink is disposed in each via scribe to form a via. Conductive ink is also disposed along the top surface of the stack of thin film layers to form at least one conductive grid.
US08716590B2	Stacked solar cell device This stacked solar battery device includes a plurality of solar battery units 4, an enclosure case made of a metal plate to house these solar battery units 4 therein, a cover glass having a partial cylindrical lens formed. The plurality of solar battery units 4 are housed in a plurality of recesses of the enclosure case, and are sealed with a sealing material of synthetic resin. The solar battery unit 4 has a planar light receiving solar battery module 10, and rod light receiving solar battery modules 30 and 50 stacked so that the module having a shorter center wavelength of the sensitivity wavelength band is positioned closer to the incident side of the sunlight. The solar battery module 10 is configured so that five planar light receiving solar-battery cells 11 are connected in parallel with four connection rods 20a and 20b, and the sunlight modules 30 and 50 are configured so that five sub modules 31 and 51 are connected in parallel respectively with the connection rods 40a, 40b, 60a and 60b. The sub modules 31 and 51 are configured so that a plurality of rod-shaped solar battery cells 32 and 52 respectively are connected in series.
US08716583B2	Musical learning and interaction through shapes The present invention extends to methods, systems, and computer program products for musical learning and interaction. Embodiments include presenting a grouping of keys that share the same tonal context, and that have a tonal context that fits with a particular song. A user is prompted to provide user input, while the particular song is being played, using any order of keys selected from the particular key grouping. User input is received and is used as part of a music lesson and/or as part of a remix of the particular song. In addition, a musical instrument includes a centered keyboard, which include top keys and bottom keys that are pressable to produce musical notes and that are symmetrically centered about the axis of symmetry.
US08716576B1	Maize inbred PH1K93 A novel maize variety designated PH1K93 and seed, plants and plant parts thereof. Methods for producing a maize plant that comprise crossing maize variety PH1K93 with another maize plant. Methods for producing a maize plant containing in its genetic material one or more traits introgressed into PH1K93 through backcross conversion and/or transformation, and to the maize seed, plant and plant part produced thereby. Hybrid maize seed, plant or plant part produced by crossing the variety PH1K93 or a locus conversion of PH1K93 with another maize variety.
US08716568B2	Soybean variety A1035869 The invention relates to the soybean variety designated A1035869. Provided by the invention are the seeds, plants and derivatives of the soybean variety A1035869. Also provided by the invention are tissue cultures of the soybean variety A1035869 and the plants regenerated therefrom. Still further provided by the invention are methods for producing soybean plants by crossing the soybean variety A1035869 with itself or another soybean variety and plants produced by such methods.
US08716567B2	Soybean cultiver NE2412487 The present invention is in the field of soybean variety NE2412487 breeding and development. The present invention particularly relates to the soybean variety NE2412487 and its progeny, and methods of making NE2412487.
US08716565B2	Soybean cultivar WN0913501 The present invention is in the field of soybean variety WN0913501 breeding and development. The present invention particularly relates to the soybean variety WN0913501 and its progeny, and methods of making WN0913501.
US08716563B2	Soybean cultivar WN0912882 The present invention is in the field of soybean variety WN0912882 breeding and development. The present invention particularly relates to the soybean variety WN0912882 and its progeny, and methods of making WN0912882.
US08716558B2	Method of altering glycosylation of proteins in response to nojirimycin glucuronide in a plant cell expressing glucuronidase Novel pro-drugs and methods for their use to alter the growth and biological characteristics of living cells, tissues, or whole organisms are described. Such cells may include animal cells, plant cells and bacterial cells. The methods allow for selective activation of the pro-drugs at or near transformant host cells expressing a gene for an enzyme that activates the pro-drugs. Pro-drugs according to a preferred embodiment of the invention are conjugates of a bioactive compound and a chemical group that is capable of being cleaved from the bioactive compound by action of an enzyme. Methods according to this invention include, (a) introducing into targeted cells a gene encoding an enzyme and (b) administering a pro-drug, wherein the enzyme releases the pro-drug from conjugation. In a preferred embodiment of the invention, the gene encoding the enzyme is a marker gene. Methods according to a preferred embodiment of the invention include altering protein production in a plant cell such as altering glycosylation of a protein produced by the plant cell.
US08716556B2	Use of MYB96 gene from Arabidopsis thaliana to increase cuticular wax biosynthesis A method for increasing cuticular wax biosynthesis of plant includes transforming a plant cell with the recombinant vector containing MYB96 (myb domain protein 96) gene from Arabidopsis thaliana. A method for producing a transgenic plant with increased cuticular wax biosynthesis includes transforming a plant cell with the recombinant vector containing the MYB96 gene, and regenerating the transformed plant cell into the transgenic plant. A plant and a seed with increased cuticular wax biosynthesis are produced by the method. A method for producing a biofuel using a cuticular wax includes separating and purifying a cuticular wax from the plant. A composition for increasing cuticular wax biosynthesis of plant includes the MYB96 gene.
US08716554B2	Plants resistant to cytoplasm-feeding parasites The present invention relates to transgenic plants resistant to parasites that their normal life cycle includes feeding on the plant cytoplasm, including insects, nematodes and fungi, wherein the plants are engineered to produce small interfering RNAs (siRNAs) capable of silencing a parasite specific gene. Particularly the parasite gene is a stage-specific gene, more particularly a gene involved in essential, early developmental stages of the parasite in or on the plant.
US08716545B1	Methods and apparatuses for separating toluene from multiple hydrocarbon streams Methods and apparatuses for separating toluene from multiple hydrocarbon streams are provided. A method includes fractionating a first hydrocarbon stream, which includes benzene-depleted fractionation bottoms from benzene fractionation, in a first fractionation zone into a first fractionation overhead stream that includes toluene and a first fractionation bottoms. A second hydrocarbon stream, which includes toluene and is substantially free of compounds having a higher vapor pressure than toluene, is fractionated in a second fractionation zone into a second fractionation overhead stream including toluene and a second fractionation bottoms. The second fractionation zone is in liquid isolation from and in vapor communication with the first fractionation zone. The first fractionation bottoms are removed from the first fractionation zone, and the second fractionation bottoms are removed from the second fractionation zone separate from the first fractionation bottoms. The first fractionation overhead stream and the second fractionation overhead stream are combined to produce a combined fractionation overhead stream.
US08716539B2	Method for producing substituted diamantanes Dinitroxylated diamantanes are suitable for being reacted with nucleophiles to form the corresponding disubstituted diamantanes. Surprisingly, at least dinitroxylated or hydroxylated diamantanes are rearranged in the presence of a strong acid and at least 4,9-nitroxylated or hydroxylated diamantanes are created. On this basis, 4,9-substituted diamantanes are able to be produced in a targeted manner by reaction with further nucleophiles. Methods for producing at least disubstituted diamantanes include: (a) at least dinitroxylation, followed by the substitution of all nitroxy groups by a nucleophile; or (b) at least dinitroxylation, the subsequent rearrangement in the presence of a strong acid, after realized rearrangement all nitroxy groups are replaced by a nucleophile; or (c) at least dinitroxylation, then subsequent reaction with water (as nucleophile), and rearrangement of the at least dihydroxylated compound in the presence of a strong acid, all hydroxy groups being replaced by another nucleophile in the event of a successful rearrangement.
US08716531B2	Method for producing norbornene derivative A method for producing a norbornene derivative includes forming a Mannich base represented by any of general formulae (5) to (7) by reacting a carbonyl compound represented by any of general formulae (1) to (3) and an amine compound represented by general formula (4) with each other in an acidic solvent, to thereby obtain a reaction liquid comprising the Mannich base in the acidic solvent, wherein the acidic solvent comprises a formaldehyde derivative and 0.01 mol/L or more of an acid represented by formula HX; reacting the Mannich base and a diene compound represented by general formula (8) with each other by adding an organic solvent, a base in an amount of 1.0 to 20.0 equivalents to the acid, and the diene compound to the reaction liquid, and then heating the reaction liquid, to thereby form the norbornene derivative represented by any of general formulae (9) to (11).
US08716527B2	2-substituted-p-quinone derivatives for treatment of oxidative stress diseases Methods of treating or suppressing oxidative stress diseases including mitochondrial diseases, impaired energy processing disorders, neurodegenerative diseases and diseases of aging are disclosed, as well as compounds useful in the methods of the invention, such as 2- substituted-p-quinone derivatives as disclosed herein.
US08716526B2	Method for producing difluoroacetyl chloride A production method of difluoroacetyl chloride according to the present invention includes a chlorination step of bringing a raw material containing at least either a 1-alkoxy-1,1,2,2-tetrafluoroethane or difluoroacetyl chloride into contact with calcium chloride at a reaction enabling temperature. A production method of 2,2-difluoroethyl alcohol according to the present invention includes a catalytic reduction step of causing catalytic reduction of the difluoroacetyl chloride obtained by the above production method. By these methods, the difluoroacetyl fluoride can be efficiently converted to the difluoroacetyl chloride and to the 2,2-difluoroethyl alcohol.
US08716525B2	Process for continuous recovering (meth) acrylic acid and apparatus for the process The present invention relates to a method and apparatus for continuous recovery of (meth)acrylic acid, and more specifically to a method of continuous recovery of (meth)acrylic acid, including: conducting gas phase oxidation of at least one compound selected from the group consisting of propane, propylene, butane, i-butylene, t-butylene, and (meth)acrolein in the presence of a catalyst to obtain a mixed gas containing (meth)acrylic acid; quenching the (meth)acrylic acid-containing mixed gas to remove high boiling point by-products in the (meth)acrylic acid-containing mixed gas; contacting the high boiling point by-product-free (meth)acrylic acid-containing mixed gas with water or an aqueous solution to obtain an aqueous solution containing (meth)acrylic acid; and purifying the aqueous solution containing (meth)acrylic acid to obtain (meth)acrylic acid.The continuous recovery method of (meth)acrylic acid according to the presentA invention may significantly reduce energy consumption and continuously recover high purity (meth)acrylic acid with excellent production efficiency compared to the previous recovery methods.
US08716524B2	Optically active quaternary ammonium salt having axial asymmetry and process for producing a-amino acid and derivative thereof with the same The present invention provides a compound of the following formula (I) below. This compound (I) can be produced by reacting a 2,2′-dimethylene bromide-1,1′-binaphthyl derivative, which can be produced by a relatively small number of processes, with an easily available secondary amine. This compound (I) is useful as a chiral phase-transfer catalyst.
US08716522B2	Acetic acid production from biomass pyrolysis Methods are disclosed for producing, from renewable carbon sources, acetic acid in an economical manner. In particular, these methods are directed to the separation and recovery of acetic acid as a substantial product (e.g., as much as 5% by weight or more) of biomass pyrolysis. For a given commercial biomass pyrolysis unit, the acetic acid yield can represent a significant quantity of that used in a major industrial applications such as purified terephthalic acid (PTA) production. According to some embodiments, pyrolysis conditions and/or flow schemes advantageously improve the recovery of acetic acid for a given purity level.
US08716517B2	Method for producing diisocyanates by gas-phase phosgenation A process for preparing diisocyanates by gas-phase phosgenation starting out from a feed stream comprising the corresponding diamines and a phosgene-comprising feed stream, in which the feed streams are separately converted into the gas phase and preheated to the reaction temperature of the gas-phase phosgenation, wherein the waste heat from a plant for preparing chlorine by heterogeneously catalyzed oxidation of hydrogen chloride by the Deacon process is utilized for this purpose, is proposed.
US08716511B2	Process for preparing organoalkoxyhydrosilanes Process for preparing organoalkoxyhydrosilanes with a boron content less than 100 ppb and of the formula R1xHySi(OR2)z where x+y+z=4 and x, y, z are greater than or equal to 1, wherein, in a first step, a boron-contaminated organohalohydrosilane of the formula R1xHySiHalz where x+y+z=4, x, y, z are greater than or equal to 1, and R1 are linear or branched alkyl, cycloalkyl, aryl, alkenyl or arylalkyl radicals having 1 to 12 carbon atoms and Hal is F, Cl, Br or I, is subjected to a treatment with silica or aluminosilicate and the silica or the aluminosilicate is subsequently removed from the organohalohydrosilane in a second step and then the purified organohalohydrosilane is reacted with alcohol R2—OH where R2 is a methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, n-pentyl, isopentyl, neopentyl or tert-pentyl radical.
US08716509B2	Process for preparing ruthenium(0)-olefin complexes The present invention relates to a process for preparing ruthenium(0)-olefin complexes of the (arene)(diene)Ru(0) type by reacting a ruthenium starting compound of the formula Ru(+II)(X)p(Y)q (in which X=an anionic group, Y=an uncharged two-electron donor ligand, p=1 or 2, q=an integer from 1 to 6), with a cyclohexadiene derivative or a diene mixture comprising a cyclohexadiene derivative, in the presence of a base. In this process, the arene bound in the (arene)(diene)Ru(0) complex is formed from this cyclohexadiene derivative by oxidation. Suitable ruthenium(II) starting compounds are, for example, RuCl2(acetonitrile)4, RuCl2(pyridine)4 or RuCl2(DMSO)4. The bases used are inorganic or organic bases. The ruthenium(0)-olefin complexes prepared by the process according to the invention have a high purity and can be used as precursors for homogeneous catalysts, for preparation of functional ruthenium- or ruthenium oxide-containing layers and for therapeutic applications.
US08716507B2	Iron(II) catalysts containing diimino-diphosphine tetradentate ligands and their synthesis New hexa-coordinate iron (II) complexes comprising compounds of formula (I) are described. These compounds comprise a tetradentate ligand with donor atoms comprising nitrogen and phosphorus. These complexes are shown for the first time to be useful catalysts for the hydrogenation of ketones, aldehydes, or imines to produce alcohols or amines, and the asymmetric hydrogenation of prochiral ketones or imines to produce non-racemic alcohols or amines. The source of the hydrogen can be hydrogen gas or a hydrogen-donating molecule such as isopropanol or hydrogen-donating mixture such as formic acid and an amine depending on the structure of the catalyst. In certain embodiments, the axial ligands on the catalyst comprise organonitrile ligands, carbonyl ligands, isonitrile ligands, or combinations thereof. The catalysts and the preparation thereof are disclosed. A reaction using phosphine and diamine precursors that is templated by the iron ion is the preferred route to the catalysts.
US08716504B2	Epoxidation processes The present invention provides rhenium-promoted epoxidation catalysts based upon shaped porous bodies comprising a minimized percentage of their total pore volume being present in pores having diameters of less than one micron, and a surface area of at least about 1.0 m2/g. Processes of making the catalysts and using them in epoxidation processes are also provided.
US08716503B2	Process for preparing divinylarene dioxides A process for preparing a divinylarene dioxide including reacting (a) at least one divinylarene with (b) at least one oxidant in the presence of (c) at least one transition metal complex catalyst, and (d) optionally, in the presence of a solvent, and (e) optionally in the presence of a catalyst modifier under conditions to form a divinylarene dioxide product.
US08716494B2	Pyrrolidinone carboxamide derivatives Pyrrolidinone carboxamide compounds are provided that are useful for inhibiting the binding of ligands to the ChemR23 receptor.
US08716493B2	Multicyclic compounds and the use thereof The present invention is directed to novel multicyclic molecules that mediate enzymatic activity. In particular, the compounds may be effective in the treatment of diseases or disease states related to the activity of PARP, VEGFR2, and MLK3 enzymes, including, for example, neurodegenerative diseases, inflammation, ischemia, and cancer.
US08716488B2	Olefin metathesis catalysts The present invention refers to novel ruthenium- and osmium-based catalysts for olefin metathesis reactions, particularly to catalysts having stereoselective properties. Z-selectivity is obtained by utilizing two mono-anionic ligands of very different steric requirement. In olefin metathesis reactions these catalysts selectively provide the Z-isomer of disubstituted olefinic products.
US08716486B2	2-heterocyclylaminoalkyl-(p-quinone) derivatives for treatment of oxidative stress diseases Methods of treating or suppressing oxidative stress disorders including mitochondrial diseases, impaired energy processing disorders, neurodegenerative diseases and diseases of aging are disclosed, as well as compounds useful in the methods of the invention, such as 2-heterocyclylaminoalkyl-(p-quinone) derivatives.
US08716480B2	7-aryl-1,2,4-triazolo[4,3-a]pyridine derivatives and their use as positive allosteric modulators of mGluR2 receptors The present invention relates to novel triazolo[4,3-a]pyridine derivatives of Formula (I) wherein all radicals are as defined in the claims. The compounds according to the invention are positive allosteric modulators of the metabotropic glutamate receptor subtype 2 (“mGluR2”), which are useful for the treatment or prevention of neurological and psychiatric disorders associated with glutamate dysfunction and diseases in which the mGluR2 subtype of metabotropic receptors is involved. The invention is also directed to pharmaceutical compositions comprising such compounds, to processes to prepare such compounds and compositions, and to the use of such compounds for the prevention or treatment of neurological and psychiatric disorders and diseases in which mGluR2 is involved.
US08716479B2	Methods for stereoselective reduction The invention is directed to a method to reduce a C—C double bond of an enone of a steroidal compound to produce a mixture of β ketone product and α ketone product, comprising treating a solution or suspension of the steroidal compound in a solvent with hydrogen gas in the presence of a catalyst and a substituted pyridine.
US08716477B2	Crystalline forms of bosentan salts and processes for their preparation The present invention relates to crystalline forms of bosentan salts and processes for their preparation.(FORMULA)
US08716475B2	2-aminopyrimidine modulators of the histamine H4 receptor 2-Aminopyrimidine compounds are described, which are useful as H4 receptor modulators. Such compounds may be used in pharmaceutical compositions and methods for the treatment of disease states, disorders, and conditions mediated by H4 receptor activity, such as allergy, asthma, autoimmune diseases, and pruritis.
US08716474B2	Method for producing 2,4,6-tris(hydroxyphenyl)-1,3,5-triazine compound The present invention provides a method of producing 2,4,6-tris(hydroxyphenyl)-1,3,5-triazine compound in which no rapid solidification or the like occurs and generation of by-products is suppressed, thereby enabling to reduce decrease in the yield.Particularly, the present invention is a method of producing 2,4,6-tris(hydroxyphenyl)-1,3,5-triazine compound represented by the following Formula (1): wherein the reaction between cyanuric halide compound represented by the following Formula (2): and hydroxyphenyl compound represented by the following Formula (3): is carried out by using, as the reaction solvent, a solvent containing sulfolane as the main component in the presence of a Lewis acid at an amount of 0.3 to 0.7 equivalent with respect to 1 equivalent of halogen atom of the cyanuric halide compound represented by the Formula (2), or by using a mixed solvent of inert solvent and cycloalkyl alkyl ether represented by the following Formula (4): Z1—O—Z2. (4)
US08716472B2	Tripodal cyclohexane derivatives and their use as carbohydrate receptors A tri-podal compound according to formula (I) wherein, each Z is the same and is a substituted or unsubstituted N-heteroaromatic single-, multiple-, or fused-ring; and each A is the same, and can represent a direct bond between the cyclohexane ring and Z, or a carboxamide group (—C(O)—N(H)—). Use of the compounds in combinatorial libraries, methods of making the tripodal compounds, sensor devices for detecting carbohydrate targets, and methods of using the tripodal compounds to detect carbohydrate targets in a sample are also disclosed.
US08716468B2	Process for preparing randomly-bonded polysaccharides The invention relates to a process for preparing a randomly-bonded polysaccharide, comprising as ingredients a saccharide, a polyol and an acid serving as a catalyst, the process comprising the steps of feeding the ingredients into a reactor in order to dehydrate the fed ingredients to an essentially anhydrous syrup, polycondensating the essentially anhydrous syrup at elevated temperatures in the said reactor while removing the reaction water, wherein the reactor is a mixing kneader device with counter-acting blades, wherein during the feeding step the saccharide, the polyol and the acid serving as catalyst are simultaneously or consecutively fed to the reactor, and in that during the dehydratation and polycondensation step the free water and reaction water is removed from the mixing kneader device by kneading and mixing the fed ingredients and the subsequent essentially anhydrous syrup under reduced pressure in the reactor, and during the polycondensation the essentially anhydrous syrup is continuously kneaded in the kneader reactor until the required degree of polymerization is obtained.
US08716464B2	Compositions and methods for silencing Ebola virus gene expression The present invention provides compositions comprising therapeutic nucleic acids (e.g., interfering RNA such as siRNA) that target Ebola virus (EBOV) gene expression and methods of using such compositions to silence EBOV gene expression. More particularly, the invention provides unmodified and chemically modified interfering RNA which silence EBOV gene expression and methods of use thereof, e.g., for preventing or treating EBOV infections caused by one or more EBOV species such as Zaire EBOV. The invention also provides serum-stable nucleic acid-lipid particles comprising one or more interfering RNA molecules, a cationic lipid, and a non-cationic lipid, which can further comprise a conjugated lipid that inhibits aggregation of particles. Methods of silencing EBOV gene expression by administering one or more interfering RNA molecules to a mammalian subject are also provided.
US08716462B2	Levels and/or sustainability of DNA-based gene expression The invention encompasses methods for improving the level and/or sustainability of expression for a target nucleic acid in a eukaryotic cell comprising: (a) modifying the target nucleic acid to introduce or to comprise signals that limit or constrain the positions of nucleosome cores, and (b) introducing the modified target nucleic acid into the eukaryotic cell, wherein the modified target nucleic acid has improved levels and/or sustainability of expression compared to original unmodified nucleic acid.
US08716459B2	Isolated nucleic acid molecules encoding variant activin receptor polypeptides The present invention provides variant activin IIB soluble receptor polypeptides and proteins capable of binding and inhibiting the activities of activin A, myostatin, or GDF-11. The present invention also provides polynucleotides, vectors and host cells capable of producing the variant polypeptides and proteins. Compositions and methods for treating muscle-wasting and other diseases and disorders are also provided.
US08716457B2	Nucleobase characterisation The present invention provides modified nucleobase compounds, modified nucleic acid mimetic compounds and various uses thereof. In addition, the invention provides methods for nucleobase characterisation, SNP characterisation and nucleic acid sequencing.
US08716455B2	Genetic products differentially expressed in tumors and use thereof The invention relates to the identification of genetic products that are expressed in association with a tumor and the nucleic acid coding therefor. The invention relates to the therapy and diagnosis of diseases in which said genetic products that are expressed in association with a tumor are expressed in an aberrant manner. The invention also relates to proteins, polypeptides, and peptides which are expressed in association with a tumor and the nucleic acids coding therefor.
US08716453B2	Cystatin C, β2 microglobulin, α1 microglobulin and genes for same, antibody, and kit and method for diagnosis of feline nephropathy Proteins respectively having the amino acid sequences represented by SEQ ID NOs: 1, 17 and 32; structural genes respectively encoding the proteins, preferably respectively having the nucleotide sequences represented by SEQ ID NOs: 2, 18 and 33; an antibody capable of specifically binding to feline-derived cystatin C, feline-derived β2 microglobulin or feline-derived α1 microglobulin; a kit for diagnosing feline nephropathy, containing the antibody of the present invention; and a method for diagnosing feline nephropathy using the antibody of the present invention.
US08716452B2	Fully human antibodies against human 4-1BB Fully human antibodies and antigen-binding portions thereof that bind to human 4-1BB and that allow binding of human 4-1BB to a human 4-1BB ligand. In one aspect, the antibody is an IgG4 antibody. Also provided is a method for treating a disease in a subject comprising administering a therapeutically effective amount of the antibody to said subject.
US08716450B2	Dual variable domain immunoglobulins and uses thereof The present invention relates to engineered multivalent and multispecific binding proteins, methods of making, and specifically to their uses in the prevention, diagnosis, and/or treatment of disease.
US08716449B2	Antibodies against human IL-12 The present invention relates to novel p75 heterodimer specific anti-human IL-12 antibodies that are characterized by a higher potency and greater efficacy in neutralizing human IL-12 bioactivity than known heterodimer specific IL-12 monoclonal antibodies. The heterodimer specific antibodies recognize one or more epitopes of the human IL-12 p75 heterodimer, but do not bind to the p40 subunit alone. The heterodimer specific IL-12 antibodies neutralize rhesus monkey IL-12 bioactivity with a potency similar to their potency for neutralizing human IL-12 bioactivity making them useful IL-12 antagonists for in vivo studies in the rhesus monkey.
US08716446B2	Biopolymer conjugates comprising an interleukin-11 analog The present invention provides for biopolymer conjugates of an IL-11 analog (mIL-11) and a biocompatible polymer. The mIL-11 of the invention displays an enhanced resistance to acidolysis and shows increased stability as compared to rhIL-11. The conjugates of the present invention are characterized by a longer serum half-life and exhibit essentially no loss of activity as compared to the corresponding unconjugated mIL-11.
US08716445B2	Compositions comprising signal peptide-containing proteins The invention provides human signal peptide-containing proteins (HSPP) and polynucleotides which identify and encode HSPP. The invention also provides expression vectors, host cells, antibodies, agonists, and antagonists. The invention also provides methods for diagnosing, treating, or preventing disorders associated with expression of HSPP.
US08716444B2	Method and apparatus for predicting susceptibility to a developmental disorder The present invention provides a method of screening a subject for mutations in the TRAPPC9 gene that are associated with developmental disabilities. The present invention also provides proteins that are associated with developmental disabilities including a truncation of NIBP. Also provided are nucleotide sequences encoding such proteins and methods of screening subjects to identify nucleotide sequences or proteins associated with developmental disabilities.
US08716441B2	Ubiquitin binding polypeptides The invention relates to Tandem Ubiquitin Affinity Entities (TUBES) which are fusion polypeptides comprising at least two ubiquitin binding domains connected to each other by non-naturally occurring spacer regions. The TUBES are capable of binding with high affinity to ubiquitin and to ubiquitylated polypeptides and are therefore suitable for the purification of ubiquitylated polypeptides from cellular extracts as well as for the identification of new ubiquitylated polypeptides.
US08716438B2	Matricryptic ECM peptides for tissue reconstruction Chemoattractant polypeptide compounds for progenitor cells and compositions and drug products comprising the compounds are provided herein. Methods for attracting progenitor cells to a location in or on a patient also are provided along with methods of growing and repairing bone.
US08716436B2	Mu opioid receptor agonist analogs of the endomorphins The invention relates to cyclic peptide agonists that bind to the mu (morphine) opioid receptor and their use in the treatment of acute and/or chronic pain. Embodiments of the invention are directed to cyclic pentapeptide and hexapeptide analogs of endomorphin that have (i) a carboxy-terminal extension with an amidated hydrophilic amino acid and (ii) a substitution in amino acid position 2. These peptide analogs exhibit decreased tolerance relative to morphine, increased solubility compared to similar tetrapeptide analogs, while maintaining favorable or improved therapeutic ratios of analgesia to side effects.
US08716435B2	Multibranched polyoxyalkylene compound and producing method thereof A multibranched polyoxyalkylene compound represented by the following formula (1): wherein R1 is the same or different and is a hydrocarbon group having 1 to 24 carbon atoms, OA1 and OA2 are the same or different and are an oxyalkylene group having 2 to 4 carbon atoms, n and m are the same or different and are an average number of moles of the oxyalkylene group added, n represents 0 to 1000, m is the same or different and represents 10 to 1000, X represents a functional group capable of reacting with an amino group, a mercapto group, an aldehyde group, a carboxyl group, a triple bond, or an azide group to form a chemical bond, and L1 and L2 are the same or different and are a single bond, an alkylene group, or an alkylene group in which at least one bond selected from an ester bond, a urethane bond, an amide bond, an ether bond, and an amino is interposed.
US08716434B2	Aramid copolymer The invention concerns polymer comprising 2-(4-amino phenyl)-5 (6) amino benzimidazole (DAPBI), PPD, and terephthaloyl dichloride, the polymer having a IPC peak block ratio of 1.52 to 1.56 and an inherent viscosity of greater than 2 dl/g.
US08716430B2	Aramid copolymer The invention concerns polymer comprising residues of 2-(4-amino phenyl)-5 (6) amino benzimidazole (DAPBI), paraphenylene diamine (PPD), and terephthaloyl dichloride, made by a process comprising the steps of: (a) forming a slurry of b mole percent DAPBI and y mole percent PPD in a solvent system comprising organic solvent and c weight percent of an inorganic salt, wherein the inorganic salt is present in an amount of at least 5 weight percent of the organic solvent, DAPBI and PPD being present in an amount sufficient for providing a polymer solution having a weight percent solids of 12 percent or greater on a polymer basis; and (b) contacting the slurry of step a) with a stoichiometric amount of terephthaloyl dichloride to form a product comprising the polymer; wherein the sum of y+b is 100 and the product of b×c is 225 or greater.
US08716428B2	Fluorinated polyester compound, coating compositions comprising the compound and methods of making An fluorinated polyester compound is disclosed. The fluorinated polyester compound can be made by combining ingredients comprising a hydroxyl terminated polyphenyl ether; a carboxylic acid terminated perfluoropolyether; an acid catalyst; and a solvent. A coating solution comprising the fluorinated polyester compound and a method of coating a substrate therewith are also disclosed.
US08716426B2	Method for preparing an allophanate, allophanate, and low-viscosity composition containing the allophanate A process for the preparation of an allophanate of one or more identical or different isocyanates, compositions obtained by the process, and uses of the compositions are disclosed. The process comprises reacting an isocyanate with at least one monoalcohol comprising an ether or polyether functional group in the presence of a bismuth-comprising catalyst and a metal compound as co-catalyst.
US08716423B2	Polyethylene for rotomoulding A novel polyethylene is devised which polyethylene is particularly advantageous for manufacturing rotomoulded articles.
US08716421B2	Norbornene-type formate monomers and polymers and optical waveguides formed therefrom This invention discloses and claims a series of polycyclic monomers and polymers useful in the production of optical waveguides. The polymers of the invention comprise one or more repeating units represented by the formula (IV): Wherein m, X, R1 and R2 are as defined herein. The films formed from the polymers of this invention exhibit significant changes in refractive index (greater than or equal to 0.5%) after exposure to suitable actinic or thermal energy thereby having superior optical transmission performance, which is of importance for modern optical applications such as wave guiding and optical data storage.
US08716420B2	Amphiphilic polymers and nanocrystals coated therewith An amphiphilic polymer (A) comprising repeat units of the general formulae (I), (II) and (III): or salts thereof, wherein R1 is H or methyl, R2 is an aliphatic moiety with a main chain of 3 to 30 carbon atoms and 0 to 3 heteroatoms selected from the group N, O, S, Se and Si, and R3 is one of (i) an alicyclic moiety with a main chain of 5 to 80 carbon atoms and 0 to 30 heteroatoms (ii) a moiety —Z—R4 wherein R4 is an alicyclic moiety with a main chain of 5 to 80 carbon atoms and 0 to 30 heteroatoms and Z is an aliphatic bridge of 1 to 3 carbon atoms and 0 to 2 heteroatoms, (iii) an aliphatic moiety with a main chain of 3 to 80 carbon atoms and 0 to about 30, and a C≡C group or an azido group.
US08716419B2	Fluorinated elastic copolymer and production process To provide a fluorinated elastic copolymer having high crosslinkability, having high flowability and excellent in the compression set and the resistance to bases, and its production process.A process for producing a fluorinated elastic copolymer, which comprises copolymerizing (a) tetrafluoroethylene and (b) propylene and as the case requires, (c) a perfluoro(alkyl vinyl ether) in the presence of an iodine compound represented by the formula RI2 (wherein R is a hydrocarbon group or perfluoroalkyl group having at least 3 carbon atoms) at a temperature of from 0° C. to 50° C., and a fluorinated elastic copolymer obtained by the production process.
US08716417B2	Olefin polymerization catalyst and preparation method and use thereof An olefin polymerization catalyst and preparation method and use thereof are provided. The components of the catalyst comprise an active magnesium halide, a titanium compound containing at least one Ti-halide bond loaded on the active magnesium halide, and an internal electron donor selected from one or more silicon esters compounds having formula (I). The method for preparing the catalyst components is that: adding spherical magnesium chloride alcoholate particles and the electron donor into the solution of titanium compound in sequence, and processing with the titanium compound for one or more times to obtain the catalyst. The catalyst system used for the olefin polymerization comprises the catalyst components, a cocatalyst and an external electron donor. The catalyst has high activity for the propylene polymerization, and the activity is 4399 gPP/gTi·h(50° C., 1 h, slurry polymerization at atmospheric pressure), and the isotacticity of the polymer is 98%.
US08716414B2	Mixed metallocene catalyst composition and method for preparing polyolefin using the same The present invention relates to a mixed metallocene catalyst composition including a first metallocene catalyst and a second metallocene catalyst, and a method for preparing a polyolefin using the catalyst composition. According to the catalyst composition and the preparation method, provided is a polyolefin having a wide molecular weight distribution and superior mechanical properties and processability.
US08716413B2	Photocurable composition A method for the preparation of a photocurable resin by a reaction comprising the following steps i) reacting a mixture of a novolak type epoxy resin (A) and a dicyclopentadiene-phenol glycidylether resin (B) with ii) an advancement component (C) containing at least 2 phenolic hydroxyl groups per molecule; iii) reacting with an unsaturated monocarboxylic acid (D); and iv) esterification of the unsaturated group containing resin obtained from the steps of i) to iii) with a polycarboxylic acid anhydride or a carboxylic acid anhydride (E) is disclosed.
US08716409B2	Carboxylate terminated polymers and their use in impact-modified plastics A composition includes a baleable polymer resulting from the polymerization of at least one conjugated diene in the presence of an anionic initiator. The baleable polymer has carboxylate termination resulting from the addition of carbon dioxide to terminate the polymerization reaction. The polymer has Mooney ML1+4 viscosity of >35 and a solution viscosity of X, where X is >75 cP. The addition of an lonolizer to a composition that includes the polymer reduces the solution viscosity of the polymer from X to Y where Y meets the following formula: 0.4X≦Y≧0.58X. The baleable polymer is blended with impact-modified plastics resulting in improved izod values and optical qualities. Processes for making and utilizing the polymer composition, and ionolizer are also described.
US08716401B2	Semiconductor chip laminate and adhesive composition for semiconductor chip lamination A semiconductor chip laminate comprises a plurality of semiconductor chips and an adhesive layer through which the plurality of semiconductor chips are laminated, wherein the adhesive layer is composed of an adhesive composition comprising an acrylic polymer (A); an epoxy resin (B); a thermal curing agent (C); and a certain organophosphonium compound (D) as a thermal curing accelerator, and the content of the organophosphonium compound (D) relative to 100 parts by weight in total of the epoxy resin (B) and the thermal curing agent (C) is 0.001 to 15 parts by weight.
US08716398B2	Method for preparing biodegradable polymer stereocomplexes using a supercritical fluid-organic solvent system and stereocomplexes prepared by the same The present invention relates to methods for preparing biodegradable polymer stereocomplexes using a supercritical fluid-organic solvent system and polymer stereocomplexes prepared by such methods. The method of the present invention involves introducing two types of homopolymers having different stereostructures and a small amount of organic solvent into a reactor, adding a supercritical fluid thereto, followed by applying a specific temperature and pressure to form a polymer stereocomplex having a crystalline structure. According to the method of the present invention, biodegradable polymer stereocomplexes in the form of powder or porous foam having excellent thermal and mechanical stabilities can be prepared in a simple, economical and environmentally-friendly manner in a single process.
US08716397B2	Bio-based roofing adhesive compositions An adhesive composition for use in adhering insulation panels to roofing substrates and roofing membranes to the insulation panels include two components that are mixed prior to application on the roofing substrate. The first component may include a renewable polyol and catalyst. The renewable polyol is selected from any non-petroleum based polyol that is derived from a renewable source. The second component includes isocyanate, and may also include a polyol and a catalyst. The isocyanate and the polyol may each be any non-petroleum based isocyanate or polyol that is derived from a renewable source.
US08716394B2	Polypropylene compositions containing fillers and/or pigments Polypropylene compositions having a MFR value (2.16 kg, 230° C.) from 15 to 200 g/10 min., comprising: A) a propylene polymer or polymer composition selected from propylene homopolymers or copolymers of propylene containing up to 5% by moles of comonomer(s), said homopolymers and copolymers having values of MFR, obtained without degradation treatments, from 500 to 2500 g/10 min., or combinations of the said homopolymers or copolymers; B) a filler or pigment, or their combinations; and optionally C) from 0.5 to 5% by weight, with respect to the total weight of A), B) and C), of a compatibilizer.
US08716390B2	Pigment preparations comprising nonionic surface-active additives The present invention relates to a solid pigment preparation comprising, each percentage being based on the total weight of the preparation, (A) at least 60% by weight of a pigment component comprising one or more pigments and optionally a filler; (B) 1% by weight to 39% by weight of at least one nonionic water-soluble surface-active additive based on polyethers having an HLB value of greater than 10, (C) 1% by weight to 39% by weight of at least one nonionic surface-active additive based on polyethers having an HLB value of less than 10; (D) 0% by weight to 10% by weight of an additive component comprising at least one further additive, the sum total of the weight fractions not exceeding 100% by weight. The present invention further relates to processes for production thereof and to processes for coloring macromolecular materials.
US08716387B2	Heterophasic polypropylene copolymer composition Heterophasic polypropylene composition comprising (A) 45 to 70 wt % of a propylene homo- or copolymer matrix with an MFR2 in accordance with ISO 1133 (230° C., 2.16 kg load) of ≧80 g/10 min and (B) 25 to 40 wt % of an elastomeric propylene-ethylene copolymer, having an intrinsic viscosity IV (ISO 1628, with decalin as solvent) of ≧3.3 dl/g and an ethylene content of 20 to 50 wt %, (C) 0-15 wt % of an elastomeric ethylene/alpha-olefin random copolymer (D) 3-25 parts per weight of inorganic filler, the heterophasic polypropylene compositions having a total MFR2 (230° C./2.16 kg) in accordance with ISO 1133 of ≧5 g/10 min, a Charpy notched impact strength according to ISO 179/1eA at +23° C. of ≧15.0 kJ/m2, preferably ≧25.0 kJ/m2, a minimum value for the Charpy notched impact strength according to ISO 179/1eA at −20° C. of ≧7.0 kJ/m2, preferably ≧10.0 kJ/m2 and a tensile modulus according to ISO 527-3 of ≧1200 MPa; their preparation and use for producing injection moulded articles being free of flow marks.
US08716386B2	Method for producing polymeric balls or beads containing metal elements A method for producing polymeric balls or polymeric beads doped with at least one metal element is provided. The method may comprise the following steps: a) a step for forming polymeric balls or beads by polymerization, in an organic phase comprising a polymerization initiator, of at least one ethylenic monomer comprising at least one chelating ligand of at least one metal element; and b) a step for putting said polymeric balls or beads in contact with a solution comprising at least one metal element.
US08716380B2	Polycarbonate composition having improved heat stability The invention relates to a polycarbonate composition having reduced subsequent yellowing of the mouldings produced therefrom on heat ageing and having good optical properties of the polycarbonate composition on processing.
US08716375B2	Organosilicon compound as well as rubber composition, tire primer composition, paint composition and adhesive using the same This invention relates to an organosilicon compound having a cyclic structure with nitrogen atom and silicon atom, and one or more sulfur atoms in its molecule, and having a bonding side of one or more groups having as small steric hindrance to silicon atom, a rubber composition formed by compounding an inorganic filler (B) and the organosilicon compound (C) into a rubber component (A) consisting of natural rubber and/or diene-based synthetic rubber, and a tire using such a rubber composition.
US08716373B2	Biodegradable resin composition A biodegradable resin composition containing a biodegradable resin and a cellulose having a crystallinity of X (%), wherein the cellulose is obtained by a step including subjecting a cellulose-containing raw material to a pulverization treatment (A), wherein the cellulose-containing raw material contains a cellulose having a crystallinity of Y (%), and has a bulk density of from 100 to 500 kg/m3, and an average particle size of from 0.01 to 1.0 mm, and contains a cellulose in an amount of 20% by weight or more of a residue component obtained by removing water from the raw material, wherein X and Y satisfy the following formulas: 50≦X≦Y−5 (1) and 55≦Y≦99 (2). The biodegradable resin composition can be suitably used for various industrial applications, such as daily sundries, household electric appliance parts, and automobile parts.
US08716370B2	Roof sloping compound A roof sloping compound for creating an auxiliary slope over a wide variety of roof membranes and substrates. The compound includes a dry mixture of aggregate, cement and a redispersible dry polymer adapted to be mixed with water to define a substantially self-leveling consistency enabling the compound to be readily screeded into place in a desired thickness. The aggregate comprises dolomite or limestone and the redispersible dry polymer can comprise a binder based on a copolymer of ethylene vinyl acetate. In a lightweight embodiment of the compound, the aggregate includes lightweight fillers comprising perlite and low density glass granules and a superplasticizer is added to the dry mixture to reduce water demand.
US08716369B2	Reinforced composite material, method of preparing the same, its use for preparing manufactured products, as well as manufactured products formed in this way and their use A reinforced composite material based on aluminous cement and tabular alumina or corundum, reinforced with glass-fibres, method of preparing the same, its use for preparing manufactured products, as well as manufactured products formed in this way and their use.
US08716368B2	Unsaturated polyester resin or vinyl ester resin composition This invention relates to unsaturated polyester resin or vinyl ester resin compositions comprising a polymer containing reactive unsaturations as a resin; a 1,3-dioxo-component, and optionally a reactive diluent and/or an inhibitor and/or a stabilizer; the resin compositions being curable with a peroxide component, and wherein the resin in the resin composition has an acid value=10; and the resin composition contains—while being cured—a base, which is either selected from the group of organic or inorganic oxides, hydroxides, alkoxides or carboxylates for each of which the cation has a redox potential of the metal of at most −1V, or of ammonium ions; or is selected from the group of nitrogen-containing organic compounds. The present invention also relates to objects and structural parts prepared from such resin composition by curing with a peroxide. Finally the invention also relates to methods of peroxide curing of unsaturated polyester or vinyl ester curing and its use in chemical anchoring, roof coatings etc.
US08716361B2	Curable fluorine-containing resin and active-energy-ray-curable composition including the same Provided is a curable fluorine-containing resin produced by causing a reaction between a polymer (P) and a compound (C); the polymer (P) being prepared by copolymerization in which essential monomer components are a compound (A) having a poly(perfluoroalkylene ether) chain and styryl groups at both ends of the poly(perfluoroalkylene ether) chain and a polymerizable unsaturated monomer (B) having at least one functional group (b) selected from the group consisting of a hydroxy group, an isocyanate group, an epoxy group, a carboxyl group, an acid anhydride group, and a carboxylic acid halide group; the compound (C) having a polymerizable unsaturated group and at least one functional group (c) that has reactivity with the functional group (b) and is selected from the group consisting of a hydroxy group, an isocyanate group, an epoxy group, a carboxyl group, an acid anhydride group, and a carboxylic acid halide group.
US08716358B2	Anion exchange membrane and method for producing same There is provided an anion exchange membrane comprising, as a main element, a block copolymer having a vinyl alcohol polymer block and a cationic-group containing polymer block as components and which is subjected to a crosslinking treatment. An anion exchange membrane is produced by heating a film obtained from a solution of the block copolymer at a temperature of 100° C. or more, crosslinking the film with a dialdehyde compound in water, an alcohol or a mixture of these under an acidic condition and then washing the film with water. Thus, there can be provided an anion exchange membrane in which organic fouling can be prevented and which exhibiting excellent basic properties such as a membrane resistance and an ionic transport number and excellent membrane strength.
US08716357B2	Hydrophilic polymer membranes A hydrophilic polymeric ionomer obtainable by reacting, in a solvent, components comprising a polymer and an ionic component selected from a strong acid or a strong base. The present invention also comprises methods of forming such membranes.
US08716345B2	Inhibitors of the 11-beta-hydroxysteroid dehydrogenase type 1 enzyme The present invention relates to inhibitors of the 11-beta-hydroxysteroid dehydrogenase Type 1 enzyme and their use in treatment of non-insulin dependent type 2 diabetes, insulin resistance, obesity, lipid disorders, metabolic syndrome, central nervous system disorders, and diseases and conditions that are related to excessive glucocorticoids.
US08716343B2	Calixarene-based peptide conformation mimetics, methods of use, and methods of making A class of topomimetic calixarene-based peptide mimetics is described. Calixarene-based peptide mimetics have various biological activities such as, for example, bactericidal activity, antiangiogenic activity, and/or antitumor activity. Methods of use and methods of designing calixarene-based peptide mimetics are described.
US08716341B2	Topically applicable compositions for the treatment of keratinization disorders Topical compositions containing from 0.01% to 0.09% by weight of adapalene or salts thereof are useful for the treatment or prevention of keratinization disorders, particularly acne, and additionally contain at least one gelling agent selected from among carbomers, polysaccharides, cellulose and its derivatives, copolymers of acrylate and of alkyl acrylate, copolymers of acrylamide and of sodium acrylamido-2-methylpropanesulfonate, and xanthan gum.
US08716340B2	Topical composition The invention relates to beneficial topical pharmaceutical compositions comprising the diclofenac sodium salt in unusually low amounts. The compositions represent opaque emulsion-gels, in which diclofenac is kept fully dissolved.
US08716332B2	Supplement composition and method of use to treat anhidrosis The present invention relates to a dietary supplement composition made of: linolenic expeller pressed soybean oil in the range of 65%-85%, Omega 3 (18/12) fish oil 15%-35%, and 1%-20% alpha-tocopherol and a method to use this composition to supplement the diet of a domestic animal, such as a canine or an equine.
US08716331B2	Supplement composition and methods of use The present invention relates to a dietary supplement composition made of: linolenic expeller pressed soybean oil in the range of 65%-85%, Omega 3 (18/12) fish oil 15%-35%, and 1%-20% alpha-tocopherol and a method to use this composition to supplement the diet of a domestic animal, such as a canine or an equine.
US08716330B2	Supplement composition and method of use The present invention relates to a dietary supplement composition made of: linolenic expeller pressed soybean oil in the range of 65%-85%, Omega 3 (18/12) fish oil 15%-35%, and 1%-20% alpha-tocopherol and a method to use this composition to supplement the diet of a domestic animal, such as a canine or an equine.
US08716329B2	Use of parthenolide derivatives as antileukemic and cytotoxic agents The present invention provides compounds of the formula (I) wherein: X1, X2 and X3 are heteroatoms; R4, R5, R6, R7, R8, R9 and R10 are independently selected from H, halo, —OH, —NO2, —CN and optionally substituted aliphatic, cycloalkyl, heterocycloalkyl, aryl or heteroaryl; and Z is optionally substituted C1-8 straight-chained or branched aliphatic, optionally containing 1 or more double or triple bonds, wherein one or more carbons are optionally replaced by R* wherein R* is optionally substituted cycloalkyl, heterocycloalkyl, aryl or heteroaryl; an amino acid residue, H, —CN, —C(O)—, —C(O)C(O)—, —C(O)NR1—, —C(O)NR1NR2—, —C(O)O—, —OC(O)—, —NR1CO2—, —O—, —NR1C(O)NR2—, —OC(O)NR1—, —NR1NR2—, —NR1C(O)—, —S—, —SO—, —SO2—, —NR1—, —SO2NR1—, —NR1R2, or —NR1SO2—, wherein R1 and R2 are independently selected from H and optionally substituted aliphatic, cycloalkyl, heterocycloalkyl, aryl or heteroaryl; or where R* is NR1R2, R1 and R2 optionally together with the nitrogen atom form an optionally substituted 5-12 membered ring, said ring optionally comprising 1 or more heteroatoms or a group selected from —CO—, —SO—, —SO2— and —PO—; or a pharmaceutically acceptable salt, ester or prodrug thereof.
US08716328B2	Acid-labile lipophilic prodrugs of cancer chemotherapeutic agents The present application discloses an acid labile lipophilic molecular conjugate of cancer chemotherapeutic agents and methods for reducing or substantially eliminating the side effects of chemotherapy associated with the administration of a cancer chemotherapeutic agent to a patient in need thereof.
US08716327B2	Methods of treating fatty liver disease The disclosure provides methods for treating fatty liver disease and associated conditions by inhibiting the synthesis of glucosphingolipids, as exemplified by the use of glucosylceramide synthase substrate analogs.
US08716319B2	Substituted heterocyclic compounds The present invention relates to novel heterocyclic compounds and to their use in the treatment of various disease states, including cardiovascular diseases and diabetes. In particular embodiments, the structure of the compounds is given by Formula (I): wherein Q1, Q2, R2, R3, R4, R5, and R6 are as described herein. The invention also relates to methods for the preparation of the compounds, and to pharmaceutical compositions containing such compounds.
US08716318B2	Pyridone sulfonamides and pyridone sulfamides as MEK inhibitors This invention concerns N-(ortho phenylamino dihydropyridyl)sulfonamides and N-(ortho phenylamino dihydropyridyl), N′-alkyl sulfamides which are inhibitors of MEK and are useful in the treatment of cancer and other hyperproliferative diseases.
US08716314B2	Isotopologues of thalidomide Provided herein are thalidomide, which is enriched with isotopes such as deuterium. Pharmaceutical compositions comprising the isotopes-enriched compounds, and methods of using such compounds are also provided.
US08716312B2	Inhibitors of diacylglycerol acyltransferase The present invention relates to novel heterocyclic compounds as diacylglycerol acyltransferase (“DGAT”) inhibitors, pharmaceutical compositions comprising the heterocyclic compounds and the use of the compounds for treating or preventing a cardiovascular disease, a metabolic disorder, obesity or an obesity-related disorder, diabetes, dyslipidemia, a diabetic complication, impaired glucose tolerance or impaired fasting glucose. An illustrative compound of the invention is shown below:
US08716309B2	Pharmaceutical composition comprising pyridone derivatives A pyridone derivative compound and a pharmaceutically acceptable salt, isomer, solvate or hydrate thereof, and a preventive or therapeutic pharmaceutical composition for cognitive disorders that includes the pyridone derivative compound or a pharmaceutically acceptable salt, isomer, solvate or hydrate thereof.
US08716308B2	(1-azinone)-substituted pyridoindoles Substituted pyridoindoles for incorporation in pharmaceutical compositions employed in the treatment of various diseases correspond to formula (I) wherein R1 is H or optionally substituted alkyl; R2, R3, R4 are each independently selected from H, —O-alkyl, —S-alkyl, alkyl, halo, —CF3, and —CN; G is —CR12R13—NR5— or —NR5—CR12R13; R5; is H, optionally substituted alkyl, optionally substituted heterocycle, —C(═O)—R6, —C(═O)—O—R7, or —C(═O)—NR19R20; R6 and R7 are each optionally substituted alkyl or optionally substituted heterocycle; R8, R9, R10, R11, R12, R13, R19 and R20 are each independently selected from H or optionally substituted alkyl; R14 and R15 are each independently H or halogen; L is —CH2—O—, —CH2CH2—, —CH═CH— or a bond; and B is aryl or heteroaryl or cycloalkyl; with the proviso that, when L is a direct bond, B cannot be unsubstituted heteroaryl or heteroaryl monosubstituted with fluorine.
US08716307B2	Combination antineoplastic therapy The present invention is directed to methods of using a sirolimus drug and chloroquine or a quinoline derivative in combination. Methods of use are also described.
US08716306B2	Carboxamide bioisosteres of opiates A compound of formula I is disclosed. Compounds of formula I are useful as analgesics, anti-inflammatory agents, anti-diarrheal agents, anticonvulsants, antitussives and anti-addiction medications.
US08716305B2	Multicomponent crystalline system of rosuvastatin calcium salt and vanillin A novel solid form of Rosuvastatin comprises as the active ingredient a salt of bis[(E)-7-[4-(4-fluorophenyl)-6-isopropyl-2-[methyl(methylsulfonyl)-amino]pyrimidin-5-yl]-(3R,5S)-3,5-dihydroxyhept-6-enoic acid] and vanillin or vanillin derivatives. The crystal comprising the two components, and minor amounts of water, shows improved properties such as crystallization behavior stability and decreased hydroscopic behavior.
US08716304B2	Preparation method of MLN4924 as an E1 activating inhibitor The present invention relates to a method for preparation of MLN4924 as an E1 activating inhibitor, and more specifically, to a method for efficient and stereoselective preparation of MLN4924 by means of key steps involving stereoselective reduction of cyclopentenone with isopropylidene, regioselective cleavage of isopropylidene moiety, and synthesis of cyclic sulfate.
US08716300B2	Frequency modulated drug delivery (FMDD) Embodiments of the present disclosure include a coordination complex, comprising a first biologically active moiety, a second biologically active moiety, and a metal, wherein the first biologically active moiety and second biologically active moiety are bound to the metal by covalent coordination bonds, and wherein the first biologically active moiety and second biologically active moiety are different. These complexes may enhance the pharmacodynamic properties of biologically active moieties.
US08716298B2	Composition for reducing skin wrinkles including PDE5 inhibitor Disclosed is a composition effective in reducing skin wrinkles. The composition comprises or uses a phosphodiesterase 5 (PDE5) inhibitor as an active ingredient. Further disclosed is a method for reducing skin wrinkles using the composition.
US08716293B2	Macrocyclic integrase inhibitors Compound having formula I and pharmaceutically acceptable salts or solvates thereof, their pharmaceutical formulations and use as HIV inhibitors.
US08716291B2	Certain 1H-imidazo[4,5-b]pyrazin-2(3H)-ones and 1H-imidazo[4,5-b]pyrazin-2-ols and methods for their use Provided are compounds of Formula I and compounds of Formula II: and pharmaceutically acceptable salts thereof, and methods for their use.
US08716289B2	Carbamate derivatives of alkyl-heterocycles, preparation thereof and therapeutic use thereof Compound corresponding to general formula (I): in which R2 is a hydrogen or fluorine atom or a hydroxyl, cyano, trifluoromethyl, C1-6-alkyl, C1-6-alkoxy or NR8R9 group; n is an integer equal to 1, 2 or 3 and m is an integer equal to 1 or 2; A is a covalent bond or a C1-8-alkylene group; R1 is a phenyl, pyridinyl, pyridazinyl, pyrimidinyl, pyrazinyl, triazinyl, naphthyl, quinolinyl, isoquinolinyl, phthalazinyl, quinazolinyl, quinoxalinyl, cinnolinyl or naphthyridinyl group, this group being optionally substituted; R3 is a hydrogen or fluorine atom, a C1-6-alkyl group or a tritluoromethyl group; R4 is a group selected from furanyl, pyrrolyl, thienyl, isothiazolyl, oxazolyl, isoxazolyl, pyrazolyl, oxadiazolyl, thiadiazolyl, imidazole, triazolyl, tetrazolyl, oxazolone, oxazolidinone, isoxazolone, isoxazolidinone, isothiazolone, isothiazolidinone, imidazolone, imidazolidinone, pyrazolone, pyrazolidinone, oxadiazolone, thiadiazolone and triazolone, this group being optionally substituted; in the form of a base or of an addition salt with an acid. Therapeutic use.
US08716284B2	Adamantyl diamide derivatives and uses of same The present invention provides adamantyl-diamide derivatives of formula (I): wherein R1 and R2 are as defined herein, or a pharmaceutically acceptable salt thereof; and pharmaceutical compositions and methods using the same.
US08716283B2	Type III secretion inhibitors, analogs and uses thereof The invention, in some aspects, relates to compounds and compositions useful for inhibiting Type III secretion systems in pathogenic bacteria, such as Yersinia Pestis. In some aspects, the invention relates to methods for discovering inhibitors of the Type III secretion system and uses of such inhibitors in the treatment and prevention of disease.
US08716278B1	Abuse deterrent and anti-dose dumping pharmaceutical salts useful for the treatment of attention deficit/hyperactivity disorder A pharmaceutical composition comprising a drug substance consisting essentially of a pharmaceutically acceptable organic acid addition salt of an amine containing pharmaceutically active compound wherein the amine containing pharmaceutical active compound is selected from the group consisting of racemic or single isomer ritalinic acid or phenethylamine derivatives and the drug substance has a physical form selected from amorphous and polymorphic.
US08716275B2	Compound for the treatment of hepatitis C The present invention provides (1aR,12bS)-8-cyclohexyl-11-fluoro-N-((1 -methylcyclopropyl)sulfonyl)-1a-((3-methyl-3,8-diazabicyclo[3.2.1]oct-8-yl) carbonyl)-1,1a,2,12b-tetrahydrocyclopropa[d]indolo[2,1-a][2]benzazepine-5-carboxamide (formula I), including pharmaceutically acceptable salts, as well as compositions and methods of using the compound. The compound has activity against hepatitis C virus (HCV) and may be useful in treating those infected with HCV.
US08716274B2	Heteroaryl pyridone and aza-pyridone compounds Heteroaryl pyridone and aza-pyridone compounds of Formula I are provided, where one or two of X1, X2, and X3 are N, and including stereoisomers, tautomers, and pharmaceutically acceptable salts thereof, useful for inhibiting Btk kinase, and for treating immune disorders such as inflammation mediated by Btk kinase. Methods of using compounds of Formula I for in vitro, in situ, and in vivo diagnosis, and treatment of such disorders in mammalian cells, or associated pathological conditions, are disclosed.
US08716273B2	N-(amino-heteroaryl)-1H-pyrrolopyridine-2-carboxamides derivatives preparation thereof and their use in therapy The invention relates to compounds of the general formula (I): Wherein X, Y, Z, Z1, Z2, Z3, Z4 and n are as defined herein. The invention also relates to a method for making the same and to the use thereof in therapy.
US08716272B2	N-(amino-heteroaryI)-1H-pyrrolopyridine-2-carboxamides derivatives preparation thereof and their use in therapy The invention relates to compounds of the general formula (I): Wherein X, Y, Z, Z1, Z2, Z3, Z4 and n are as defined herein. The invention also relates to a method for making the same and to the use thereof in therapy.
US08716269B2	Combination of pilocarpin and methimazol for treating Charcot-Marietooth disease and related disorders The present invention relates to compositions and methods for the treatment of the Charcot-Marie-Tooth disease and related peripheral neuropathies. More particularly, the invention relates to combined therapies for treating said disease by affecting simultaneously muscarinic receptor signaling and thyroid hormone pathway in a subject.
US08716268B2	Nitrate esters of corticoid compounds useful as diuretics The present invention relates to the diuretic effects of nitrate esters of corticoid compounds. A patient in heart failure may be treated by administering a therapeutically effective dosage of a pharmaceutical composition comprising a nitrate ester of corticoid compound as a diuretic having the general formula B—X1—NO2. A method of improving kidney function by administering a therapeutically effective dosage of a pharmaceutical composition having a nitrate ester of corticoid compound of the same formula is also described.
US08716267B2	Bicyclic methyl amine derivatives as sphingosine-1 phosphate receptors modulators The present invention relates to novel bicyclic methyl amine derivatives, processes for preparing them, pharmaceutical compositions containing them and their use as pharmaceuticals as modulators of sphingosine-1-phosphate receptors.
US08716266B2	Use of PKC-iota inhibitors for the treatment of glioma The present invention pertains to use of PKC-iota inhibitors for treatment of glioma. In a specific embodiment, the treatment method comprises administering ICA-1 or a salt thereof to a subject with glioma. In another embodiment, the treatment method comprises contacting glioma cells with an effective amount of ICA-1 or a salt thereof.
US08716265B2	4-quinolinemethanols as anti-malarial agents The present invention relates to substituted 4-qinolinemethanols and pharmaceutical compositions thereof and methods of using the same for treating of malaria, tuberculosis, and other infectious diseases.
US08716263B2	Synthesis of purine nucleosides A process for preparing phosphoramidate prodrugs or cyclic phosphate prodrugs of nucleoside derivatives, which is a compound, its stereoisomers, salts (acid or basic addition salts), hydrates, solvates, or crystalline forms thereof.
US08716262B2	Nucleoside phosphoramidates A nucleoside compound having activity against hepatitis C virus is disclosed.
US08716261B2	Maintenance of platelet inhibition during antiplatelet therapy A method for reducing or maintaining platelet inhibition in a patient by administering cangrelor prior to an invasive procedure is described. The method of this invention can be used for patients in need of antiplatelet therapy or at risk of thrombosis. The method can further be used in patients who were previously treated with long-acting platelet inhibitors without increasing the risk of excessive bleeding.
US08716258B2	Regulation of metabolism by miR-378 The present invention provides a method of regulating fatty acid metabolism in a cell by contacting the cell with a modulator of miR-378 and/or miR-378* activity or expression. The present invention also provides a method of treating or preventing a metabolic disorder, such as obesity, diabetes, or metabolic syndrome, in a subject by administering to the subject an inhibitor of miR-378 and/or miR-378* expression or activity. Methods of treating or preventing pathologic cardiac hypertrophy, cardiac remodeling, myocardial infarction, or heart failure in a subject by inhibiting the expression or activity of miR-378 and/or miR-378* in a subject are also disclosed.
US08716256B2	Method of therapy and diagnosis of atherosclerosis There is provided a method of therapy of atherosclerosis, by providing microRNA let-7g, an analogue thereof or modified let-7g to organisms to inhibit the expression of lectin-like oxidized low density lipoprotein receptor-1 (LOX-1), and the binding of LOX-1 and oxidized low-density lipoprotein (oxLDL), so as to block the pathogenesis of atherosclerosis. Also, a method of diagnosis of atherosclerosis comprises determining the levels of microRNA let-7g in serum or plasma samples of organisms, in which the levels of microRNA let-7g is estimated in individuals with atherosclerosis as compared to individuals without atherosclerosis.
US08716254B2	DNA vaccines against tumor growth and methods of use thereof A DNA vaccine suitable for eliciting an immune response against cancer cells comprises a DNA construct operably encoding a cancer-associated Inhibitor of Apoptosis-family protein and an immunoactive gene product, such as a cytokine or a ligand for a natural killer cell surface receptor, in a pharmaceutically acceptable carrier. A preferred cytokine is CCL21. Preferred ligands for a natural killer cell surface receptor include human MICA, human MICB, human ULBP1, human ULBP2, and human ULBP3. The cancer-associated Inhibitor of Apoptosis (IAP)-family protein is preferably a survivin protein or livin protein. Method of inhibiting tumor growth by administering the vaccine of the invention to a mammal is also described.
US08716250B2	Diazoxide for the treatment of Friedreich's ataxia A pharmaceutical preparation treats Friedreich's ataxia and treats or prevents pathologies related thereto. In particular, the pharaceutical preparation concerns the use of diazoxide or 7-chloro-3-methyl-4H-1,2,4 benzothiadiazine 1,1-dioxide, in combination with glucose and/or leucine, for the treatment of Friedreich's ataxia (FRDA) and for the treatment or prevention of pathologies related thereto.
US08716248B2	Lipid tripeptide-based hydrogelator and hydrogel A hydrogel that includes an aqueous solution or an alcohol aqueous solution, and a hydrogelator containing a lipid peptide represented by Formula (1), or a pharmaceutically usable salt thereof. In Formula (1), R1 represents an aliphatic group having 9 to 21 carbon atoms; R2, R3, and R4 independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms that optionally has a branched chain having 1 or 2 carbon atoms, a phenylmethyl group, or a —(CH2)n—X group, and at least one of R2, R3, and R4 represents a —(CH2)n—X group; n represents an integer from 1 to 4; and X represents an amino group, a guanidino group, a —CONH2 group, or a 5-membered ring, a 6-membered ring or a fused heterocyclic ring composed of a 5-membered ring and a 6-membered ring that optionally has 1 to 3 nitrogen atoms.
US08716243B2	Methods of effecting Wnt signaling through Dkk structural analysis Compositions and methods related to Wnt signaling regulation by Dickkopf (Dkk) polypeptides and Wnt-related diseases are disclosed. For example, compounds that bind a Dkk or LRP polypeptide are disclosed. Compounds that disrupt binding of a Dkk polypeptide to an LRP polypeptide are also disclosed. Methods for using the described compounds and compositions are also disclosed.
US08716237B2	Methods for the treatment or prevention of hemorrhagic conditions The present invention relates to a method for treatment or prevention of a hemorrhagic condition in a patient by administering plasminogen activator inhibitor-1 (“PAI-1”) and/or an inhibitor of deubiquitinating enzyme CYLD (“CYLD”) to a patient. Pharmaceutical compositions that include one or both of PAI-1 and an inhibitor of CYLD are also disclosed.
US08716233B2	NOTCH mutations leading to increased receptor signaling The present invention is based upon the identification of regions within the NOTCH-1 receptor that, when mutated, lead to increase receptor signaling. The mutations are associated with uncontrolled cellular growth and this growth may be arrested using agents that interfere with NOTCH-1 activity, such as inhibitors of gamma-secretase. Assays for the NOTCH-1 mutations may be used diagnostically or as part of a treatment regimen for cancer patients.
US08716229B2	Osteoprotegerin in neuroprotection Methods for treating neurodegeneration, e.g., sensorineural hearing loss, or a demyelinating disease, using bisphosphonates, ERK kinase inhibitors, and osteoprotegerin (OPG) proteins or nucleic acids.
US08716227B2	Graft prosthesis, materials and methods A graft prostheses (11), materials and method for implanting, transplanting, replacing, or repairing a part of a patient. The graft prosthesis includes a purified, collagen-based matrix structure removed from a submucosa tissue source. The submucosa tissue source is purified by disinfection and removal steps to deactivate and remove contaminants, thereby making the purified structure biocompatible and suitable for grafting on and/or in a patient.
US08716222B2	Methods and compositions for promoting organ development Compositions and methods are provided for promoting organ development in warm blooded animals, and in particular in certain aspects a premature infant or fetus. Compositions and methods are also provided for the administration of at least one colony stimulating factor-1 protein (CSF-1), precursor, variant, analogue, derivative thereof, or combinations thereof, or otherwise, at least one nucleic acid molecule encoding colony stimulating factor-1 protein (CSF-1), precursor, variant, analogue, derivative thereof, or combinations thereof.
US08716221B2	Modified exendins and uses thereof The present invention discloses a modified exendin or pharmaceutically acceptable salts thereof, wherein the modified exendin comprises an amino acid sequence having at least 90% sequence identity to SEQ ID No. 17 and the amino acid sequence has a higher stability than the non-modified exendin of SEQ ID No. 4. These compounds are useful in treating type 2 diabetes as GLP-1 receptor agonists.
US08716220B2	Leptin compositions and methods for treating progressive cognitive function disorders resulting from accumulation of neurofibrillary tangles and amyloid beta The present disclosure provides compositions containing a leptin product and methods of clinical therapy and diagnostic methods for progressive cognitive disorders. According to one aspect, the described invention provides a method for treating a progressive cognitive disorder. According to another aspect, the described invention provides a method for improving resilience of cognitive function in a subject in need thereof. According to another aspect, the described invention provides a method for identifying an effective therapeutic agent for treating a progressive cognitive dysfunction disease or disorder that results from at least one of accumulation of Aβ, hyperphosphorylation of tau, or accumulation of neurofibrillary tangles.
US08716219B2	Crosslinked protein nanocrystals, crosslinked protein nanoaggregates and method of preparation thereof This invention relates to crosslinked protein nanoparticles and a method for producing the same. The method comprises the preparation and nanonization (i.e., size reduction to the nanoscale) of protein nanoparticle precursor materials—i.e., crosslinked proteins of the micron or greater size—via mechanical or hydrodynamic shear, mechanical crushing, sonic cavitation and/or hydrodynamic cavitation.
US08716213B2	Liquid detergent composition comprising an external structuring system comprising a bacterial cellulose network A structured liquid detergent composition in the form of a liquid matrix made up of an external structuring system of a bacterial cellulose network; water; and surfactant system including an anionic surfactant; a nonionic surfactant; a cationic surfactant; an ampholytic surfactant; a zwitterionic surfactant; or mixtures thereof, wherein said liquid matrix has a yield stress of from about 0.003 Pa to about 5.0 Pa at about 25° C. and provides suitable particle suspension capabilities and shear thinning characteristics.
US08716211B2	Detergent composition The invention provides a solid dishwashing detergent composition comprising an amount of from 0.01 to 10 % wt of one or more anionic polyesters. The compositions exhibit good drying properties, especially on plasticware.
US08716202B2	Method for improving fluorocarbon elastomer seal compatibility Disclosed is a method for improving compatibility of a fluorocarbon elastomer seal with a lubricating oil composition containing (a) a major amount of a base oil of lubricating viscosity; and (b) one or more dispersants containing one or more basic nitrogen atoms. The method involves adding to the lubricating oil composition an effective amount of one or more fluorocarbon elastomer compatibility improving agents comprising one or more non-halogen-containing oil-soluble titanium complexes comprising at least one ligand selected from the group consisting of (i) an anion of a saturated carboxylic acid, (ii) an anion of an α-, β- or γ-hydroxycarbonyl compound; (iii) an anion of an α-, β- or γ-hydroxycarboxylic acid, amide, or ester; (iv) an anion of an α-, β- or γ-aminocarboxylic acid; and (v) an anion of an α-, β- or γ-keto acid.
US08716201B2	Alkylated naphtylene base stock lubricant formulations In one embodiment a novel lubricant is disclosed. The lubricant comprises an alkylated naphthalene base stock with a viscosity of at least 2 cSt and less than 22 cSt kv100° C., the alkylated naphthalene base stock is greater than 55 weight percent of the lubricant, a PAO base stock with at least 4 cSt and less than 250 cSt kv100° C., the PAO base stock is at least 2 and less than 40 weight percent of the lubricant, at least 0.5 and less than 1.5 weight percent of the lubricant is an amine antioxidant additive, at least 0.5 and less than 1.5 weight percent of the lubricant is a defoamant additive, at least 0.1 and less than 0.4 weight percent of the lubricant is an alkylated rust inhibitor additive, and the lubricant has a viscosity of at least 4 cSt and less than 10 cSt kv100° C., less than 10 ppm metals, less than 100 ppm sulfur, and a VI greater than 70.
US08716199B2	Corrosion inhibitor intensifier compositions Corrosion inhibitor compounds including a corrosion inhibitor and a corrosion inhibitor intensifier composition comprising an intensifier compound that corresponds to the following formula: wherein R1 is a methyl or ethyl group, and R2 is H or an alkyl, aryl, alkyl aryl, alkylthio aryl, alkyloxy aryl, halogenated aryl, phenyl, alkyl phenyl, alkylthio phenyl, alkyloxyphenyl, or a halogenated phenyl group.
US08716197B2	Lubricating compositions for use with downhole fluids Adding a lubricant having a metal stearate and polytetrafluoroethylene (PTFE) to a downhole fluid may lubricate a first surface once the downhole fluid has been circulated within a subterranean reservoir wellbore. Friction, torque, and/or drag may be reduced when the lubricated first surface contacts a second surface. The first surface may be or include, but is not limited to a wellbore casing, a drill string, a pipe, a formation, a drill bit, a metal surface within a mud motor, formation evaluation tool, at least one drilling tool, and combinations thereof. One or both of the first and second surfaces may be metal. The downhole fluid may be or include, but is not limited to, a drilling fluid, a completion fluid, a fracturing fluid, a drill-in fluid, a workover fluid, and combinations thereof.
US08716196B2	Synthetic polypeptide libraries and methods for generating naturally diversified polypeptide variants The invention provides compositions and methods for generating libraries of DNA sequences encoding homologous polypeptides, and uses of the libraries to identify naturally diversified polypeptide variants. The invention also provides compositions and methods for generating collections of synthetic antibody fragments in which one or several complementary determining regions (CDR) are replaced by a collection of the corresponding CDR captured from a natural source. The invention further provides compositions and methods for diversifying a portion of a polypeptide by inserting a diversified sequence of synthetic or natural origin without the need for modification of the original polypeptide coding sequence.
US08716195B2	Antibody ultrahumanization by predicted mature CDR blasting and cohort library generation and screening Methods and compositions directed to improved universal antibody libraries that rationally exploit human diversity information contained within reference antibody libraries, such as universal antibody libraries, are disclosed. The disclosed processes involve use of a query CDR sequence to guide incorporation of human antibody diversity present within the reference library into cohort libraries of the invention. Methods for making and screening such cohort libraries for isolating therapeutics suitable for treating disease are also disclosed.
US08716192B2	Micro RNAs for identification of exposure to lower aliphatic saturated aldehydes and the method of identification using thereof The present invention relates to a biomarker for the identification of exposure to lower aliphatic saturated aldehydes by using micro RNA and a method for the identification of exposure to lower aliphatic saturated aldehydes using the same. In this invention, the micro RNA at least 1.5 fold up-regulated by exposure to lower aliphatic saturated aldehydes and the micro RNA up to 0.66 fold down-regulated by the same were selected. These two micro RNAs can be effectively used as the biomarker for the monitoring of lower aliphatic saturated aldehydes and for the risk assessment thereby and at the same time as a tool to investigate the mechanism of toxicity caused by such lower aliphatic saturated aldehydes.
US08716191B2	Method of preparing an adduct A method for identifying one or several molecular structure(s) having a high-affinity for a target of interest, the molecular structure(s) each including one nucleotide chain onto which is hybridized at least one PNA-encoded molecule.
US08716190B2	Amplification and analysis of selected targets on solid supports Methods are provided for multiplexed amplification of selected targets and analysis of the amplified targets. In preferred aspects the amplification and analysis take place on the same solid support and preferably in a localized area such as a bead or a feature of an array. Targets are circularized by hybridization to probes followed by ligation of the ends of the target to form a closed circle. The targets are then used as template for extension of an array bound probe resulting in extended probes having multiple copies of the target. The extended probes can then be analyzed. The methods may be used for genotyping, sequencing and analysis of copy number.
US08716177B2	Production process of sulfide containing nickel and cobalt A production process of a sulfide containing nickel and cobalt by adding a sulfurizing agent under pressurization into an aqueous solution of sulfuric acid containing nickel and cobalt, which is capable of recovering nickel and cobalt as a sulfide in high yield, as well as enhancing the utilization efficiency of hydrogen sulfide gas.A production process of a sulfide containing nickel and cobalt by adding a sulfurizing agent under pressurization into an aqueous solution of sulfuric acid containing nickel and cobalt, characterized by supplying, as the above sulfurizing agent, hydrogen sulfide gas into the vapor phase of inside of a reactor, as a major sulfurizing agent, as well as, by supplying an aqueous solution containing a sodium hydrosulfide, which is recovered by absorbing unreacted hydrogen sulfide gas, which is discharged from inside of the reactor in producing the above sulfide, with an aqueous solution of sodium hydroxide, into the liquid phase.
US08716175B2	Catalyst for producing ethylene oxide, process for producing the catalyst and process for producing ethylene oxide There is provided a catalyst for producing ethylene oxide from ethylene which is composed of at least silver (Ag), cesium (Cs), rhenium (Re) and a carrier, and can be improved, in particular, in selectivity.The present invention relates to a catalyst for producing ethylene oxide from ethylene, comprising at least silver (Ag), cesium (Cs), rhenium (Re) and a carrier, said catalyst being produced by optionally pretreating the carrier to support an alkali metal thereon and then supporting Ag, Cs and Re on the carrier, wherein the carrier has a specific surface area of 0.6 to 3.0 m2/g and a weight ratio of a silicon (Si) content to a sodium (Na) content of 2 to 50 in terms of SiO2/Na2O; a content of Re in the catalyst is 170 to 600 ppm per 1 m2/g of the specific surface area of the carrier on the basis of a weight of the carrier; and a molar ratio of Cs to Re in the catalyst is 0.3 to 19.
US08716174B2	Method for producing fine metal hydroxide particles There is provided a production method in which highly transparent fine metal hydroxide particles having a small particle size and excellent in monodispersibility can be easily produced without requiring grinding. The method for producing fine metal hydroxide particles at least includes: a reaction step of mixing an aqueous solution of a metal salt, for example, a magnesium salt, with an aqueous solution of a hydroxide salt to precipitate metal hydroxide particles in an uncrystallized state; a purification step of removing by-product salt from a mixed solution containing the precipitated metal hydroxide particles in an uncrystallized state; a surface treatment step of treating the metal hydroxide particles in an uncrystallized state obtained through the purification step with a surface-treatment agent on the surface thereof; and a heating step of crystallizing the surface-treated metal hydroxide particles in an uncrystallized state by hydrothermal treatment.
US08716171B2	Method of manufacturing a porous gallium (III) oxide photocatalyst for preparation of hydrocarbons The present invention relates to preparation of porous gallium (III) oxide [Ga2O3] photocatalyst for production of hydrocarbons a porous gallium oxide photocatalyst for production of hydrocarbons, manufactured by the foregoing method, and a process of producing hydrocarbons using the porous gallium oxide photocatalyst for production of hydrocarbons, manufactured by the foregoing method.
US08716169B2	System and method for protection of SCR catalyst and control of multiple emissions The present invention relates generally to the field of emission control equipment for boilers, heaters, kilns, or other flue gas-, or combustion gas-, generating devices (e.g., those located at power plants, processing plants, etc.) and, in particular to a new and useful method and apparatus for preventing the poisoning and/or contamination of an SCR catalyst. In another embodiment, the method and apparatus of the present invention is designed to protect an SCR catalyst, while simultaneously providing emission control.
US08716167B2	Catalyst for fuel cell and polymer electrolyte fuel cell using the same [Problem] To provide a catalyst which has high oxygen reduction activity, also has excellent durability, and is inexpensive and excellent in electric power generation cost as compared with noble metal catalysts such as platinum.[Solution to problem] A catalyst for a polymer electrolyte fuel cell, including a graphitized carbon powder and a niobium oxycarbonitride or a titanium oxycarbonitride as an active substance, and a polymer electrolyte fuel cell using the catalyst.
US08716166B2	Multifunctional chain shuttling agents The invention generally relates to chain shuttling agents (CSAs), a process of preparing the CSAs, a composition comprising a CSA and a catalyst, a process of preparing the composition, a processes of preparing polyolefins, end functional polyolefins, and telechelic polyolefins with the composition, and the polyolefins, end functional polyolefins, and telechelic polyolefins prepared by the processes.
US08716164B2	Hydrodemetallization catalyst and process This invention is directed to hydrodemetallization catalysts and hydrodemetallization processes employing a magnesium aluminosilicate clay. The magnesium aluminosilicate clay has a characteristic 29Si NMR spectrum. The magnesium aluminosilicate clay is the product of a series of specific reaction steps. Briefly, the magnesium aluminosilicate clay employed in the catalyst and process of the invention is made by combining a silicon component, an aluminum component, and a magnesium component, under aqueous conditions and at an acidic pH, to form a first reaction mixture and subsequently the pH of the first reaction mixture is adjusted to greater than about 7.5 to form a second reaction mixture. The second reaction mixture is allowed to react under conditions sufficient to form the magnesium aluminosilicate clay. The resulting magnesium aluminosilicate clay combines high surface area and activity for use in hydrodemetallization catalysts and processes.
US08716163B2	Hydrocarbon conversion catalyst A hydrocarbon conversion catalyst, which comprises, based on the total weight of the catalyst, 1-60 wt % of a zeolite mixture, 5-99 wt % of a thermotolerant inorganic oxide and 0-70 wt % of clay, wherein said zeolite mixture comprises, based on the total weight of said zeolite mixture, 1-75 wt % of a zeolite beta modified with phosphorus and a transition metal M, 25-99 wt % of a zeolite having a MFI structure and 0-74 wt % of a large pore zeolite, wherein the anhydrous chemical formula of the zeolite beta modified with phosphorus and the transition metal M is represented in the mass percent of the oxides as (0-0.3)Na2O.(0.5-10)Al2O3.(1.3-10)P2O5.(0.7-15)MxOy.(64-97)SiO2, in which the transition metal M is one or more selected from the group consisting of Fe, Co, Ni, Cu, Mn, Zn and Sn; x represents the atom number of the transition metal M, and y represents a number needed for satisfying the oxidation state of the transition metal M.
US08716161B2	Methods of regenerating aromatization catalysts Methods for treating or rejuvenating a spent catalyst are disclosed. Such methods can employ a step of halogenating the spent catalyst, followed by decoking the halogenated spent catalyst.
US08716160B2	Method of activating a Fischer-Tropsch catalyst This invention relates to the field of Fischer-Tropsch catalysis, in particular to activation of a Fischer-Tropsch catalyst. More particularly the invention relates to a method of activating an iron based Fischer-Tropsch catalyst which includes iron in a positive oxidation state by contacting in a reactor said iron based catalyst with a reducing gas selected from the group consisting of CO and a combination of H2 and CO; at a temperature of at least 245° C. and below 280° C.; at a reducing gas pressure of above 0.5 MPa and not more than 2.2 MPa; and at a GHSV of total gas fed to the reactor of at least 6000 ml(N)/g cat/h, thereby reducing the iron that is in a positive oxidation step in the catalyst.
US08716157B2	Optical glass, glass material for press molding, and optical element An optical glass in the form of an oxide glass, characterized by comprising, denoted as cation percentages: P5+ 14 to 36%; Bi3+ 12 to 34%; Nb5+ 12 to 34%; Ti4+ 5 to 20%; and W6+ 0 to 22%; wherein the total content of Bi3+, Nb5+, Ti4+, and W6+ is equal to or greater than 50%; and in that the Knoop hardness is equal to or higher than 370, the refractive index nd is equal to or higher than 2.02, and the Abbé number vd is equal to or lower than 19.0. A glass material for press molding and an optical element comprised of this optical glass. A method for manufacturing a glass material for press molding comprising the step of mechanically processing this optical glass.
US08716152B2	Method of controlling silicon oxide film thickness A deposition process for coating a substrate with films of a different thickness on front and rear surface of a substrate can be achieve in one growth. The thickness of the film deposition can be controlled by the separation between the substrates. Different separation distances between the substrates in the same chemical bath will result in different film thicknesses on the substrate. Substrates may be arranged to have different separation distances between front and back surfaces, a V-shaped arrangement, or placed next to a curtain with varying separation distances between a substrate and the curtain.
US08716145B2	Critical concentration in etching doped poly silicon with HF/HNO3 In some embodiments, the present invention discloses an etchant solution hydrochloric acid and nitric acid to etch doped polysilicon at low etch rates. The doped polysilicon can be doped with Ge, In, B and Ga. Preferably, the concentration of hydrochloric acid can be greater than 1 vol %, and the concentration of nitric acid is greater than 15 vol %.
US08716143B1	Plasma based photoresist removal system for cleaning post ash residue A method of cleaning a low dielectric constant film in a lithographic process includes providing a dielectric film having thereover a resist composition, the dielectric film having a dielectric constant no greater than about 4.0, and stripping the resist composition to leave a substantially silicon-containing ash residue on the dielectric film. The method then includes contacting the ash residue with plasma comprising an ionized, essentially pure noble gas such as helium to remove the resist residue without substantially affecting the underlying dielectric film.
US08716141B2	Electrode configurations for semiconductor devices A III-N semiconductor device can include an electrode-defining layer having a thickness on a surface of a III-N material structure. The electrode-defining layer has a recess with a sidewall, the sidewall comprising a plurality of steps. A portion of the recess distal from the III-N material structure has a first width, and a portion of the recess proximal to the III-N material structure has a second width, the first width being larger than the second width. An electrode is in the recess, the electrode including an extending portion over the sidewall of the recess. A portion of the electrode-defining layer is between the extending portion and the III-N material structure. The sidewall forms an effective angle of about 40 degrees or less relative to the surface of the III-N material structure.
US08716138B2	Method for fabricating a field side sub-bitline nor flash array Field Side Sub-bitline NOR-type (FSNOR) flash array and the methods of fabrication are disclosed. The field side sub-bitlines of the invention formed with the same impurity type as the memory cells' source/drain electrodes along the two sides of field trench oxide link all the source electrodes together and all the drain electrodes together, respectively, for a string of semiconductor Non-Volatile Memory (NVM) cells in a NOR-type flash array of the invention. Each field side sub-bitline is connected to a main metal bitline through a contact at its twisted point in the middle. Because there are no contacts in between the linked NVM cells' electrodes in the NOR-type flash array of the invention, the wordline pitch and the bitline pitch can be applied to the minimum geometrical feature of a specific technology node. The NOR-type flash array of the invention provides at least as high as those in the conventional NAND flash array in cell area density.
US08716135B1	Method of eliminating a lithography operation Methods of semiconductor device fabrication techniques using double patterning are disclosed. According to various embodiments of the invention, methods of semiconductor device fabrication using self-aligned double patterning are provided. Particular embodiments of the invention allow creation of logic circuit patterns using two lithographic operations. One embodiment of the invention employs self-aligned double patterning to define two or more sets of parallel line features with a connection feature between the sets. In such embodiments, the sets of parallel line features along with the connection features are formed using two lithographic masks, without the need for an additional mask layer to form the connection. In other embodiments, other features in addition to the connection can be added in the same mask layer.
US08716134B2	Interconnect structure employing a Mn-group VIIIB alloy liner A metallic liner stack including at least a Group VIIIB element layer and a CuMn alloy layer is deposited within a trench in a dielectric layer. Copper is deposited on the metallic liner stack and planarized to form a conductive interconnect structure, which can be a metal line, a metal via, or a combination thereof. The deposited copper and the metallic liner stack are annealed before or after planarization. The Mn atoms are gettered by the Group VIIIB element layer to form a metallic alloy liner including Mn and at least one of Group VIIIB elements. Mn within the metallic alloy liner combines with oxygen during the anneal to form MnO, which acts as a strong barrier to oxygen diffusion, thereby enhancing the reliability of the conductive interconnect structure.
US08716126B2	Semiconductor device comprising self-aligned contact bars and metal lines with increased via landing regions Disclosed herein is an illustrative semiconductor device that includes a transistor having drain and source regions and a gate electrode structure. The disclosed semiconductor device also includes a contact bar formed in a first dielectric material that connects to one of the drain and source regions and includes a first conductive material, the contact bar extending along a width direction of the transistor. Moreover, the illustrative device further includes, among other things, a conductive line formed in a second dielectric material, the conductive line including an upper portion having a top width extending along a length direction of the transistor and a lower portion having a bottom width extending along the length direction that is less than the top width of the upper portion, wherein the conductive line connects to the contact bar and includes a second conductive material that differs from the first conductive material.
US08716118B2	Replacement gate structure for transistor with a high-K gate stack A transistor includes a semiconductor layer and a gate structure located on the semiconductor layer. The gate structure includes a first dielectric layer. The first dielectric layer includes a doped region and an undoped region below the doped region. A second dielectric layer is located on the first dielectric layer, and a first metal nitride layer is located on the second dielectric layer. The doped region of the first dielectric layer comprises dopants from the second dielectric layer. Source and drain regions in the semiconductor layer are located on opposite sides of the gate structure.
US08716110B2	Laser processing method and laser processing apparatus A laser processing method comprising a step of irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 such that a light-converging point of the laser light is located within the object along the major axis of an ellipse indicative of the elliptical polarization of laser light, along a line which the object is intended to be cut, to form a modified region caused by multiphoton absorption within the object, along the line which the object is intended to be cut.
US08716106B2	Method for producing a bonded substrate A method for producing a bonded substrate having a Si1-xGex (0
US08716105B2	Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods Methods of bonding together semiconductor structures include annealing metal of a feature on a semiconductor structure prior to directly bonding the feature to a metal feature of another semiconductor structure to form a bonded metal structure, and annealing the bonded metal structure after the bonding process. The thermal budget of the first annealing process may be at least as high as a thermal budget of a later annealing process. Additional methods involve forming a void in a metal feature, and annealing the metal feature to expand the metal of the feature into the void. Bonded semiconductor structures and intermediate structures are formed using such methods.
US08716103B2	Semiconductor device and method of fabricating same A semiconductor device having a core device with a high-k gate dielectric and an I/O device with a silicon dioxide or other non-high-k gate dielectric, and a method of fabricating such a device. A core well and an I/O well are created in a semiconductor substrate and separated by an isolation structure. An I/O device is formed over the I/O well and has a silicon dioxide or a low-k gate dielectric. A resistor may be formed on an isolation structure adjacent to the core well. A core-well device such as a transistor is formed over the core well, and has a high-k gate dielectric. In some embodiments, a p-type I/O well and an n-type I/O well are created. In a preferred embodiment, the I/O device or devices are formed prior to forming the core device and protected with a sacrificial layer until the core device is fabricated.
US08716099B2	Phase-change memory A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.
US08716098B1	Selective removal method and structure of silver in resistive switching device for a non-volatile memory device A method for forming a non-volatile memory device includes providing a substrate having a surface region, forming a first wiring structure overlying the surface region, depositing a first dielectric material overlying the first wiring structure, forming a via opening in the first dielectric material to expose a portion of the first wiring structure, while maintaining a portion of the first dielectric material, forming a layer of resistive switching material comprising silicon, within the via opening, forming a silver material overlying the layer of resistive switching material and the portion of the first dielectric material, forming a diffusion barrier layer overlying the silver material, and selectively removing a portion of the silver material and a portion of the diffusion barrier layer overlying the portion of the first dielectric material while maintaining a portion of the silver material and a portion of the diffusion barrier material overlying the layer of silicon material.
US08716097B2	MOS transistors having reduced leakage well-substrate junctions A Metal-Oxide Semiconductor (MOS) transistor includes a substrate having a topside semiconductor surface doped with a first dopant type having a baseline doping level. A well is formed in the semiconductor surface doped with a second doping type. The well forms a well-substrate junction having a well depletion region. A retrograde doped region is below the well-substrate junction doped with the first dopant type having a peak first dopant concentration of between five (5) and one hundred (100) times above the baseline doping level at a location of the peak first dopant concentration, wherein with zero bias across the well-substrate junction at least (>) ninety (90) % of a total dose of the retrograde doped region is below the bottom of the well depletion region. A gate structure is on the well. Source and drain regions are on opposing sides of the gate structure.
US08716094B1	FinFET formation using double patterning memorization Approaches for forming a FinFET device using double patterning memorization techniques are provided. Specifically, a device will initially be formed by defining a set of fins, depositing a poly-silicon layer, and depositing a hardmask. Thereafter, a front end of the line (FEOL) lithography-etch, lithography-etch (LELE) process will be performed to form a set of trenches in the device. The set of trenches will be filled with an oxide layer that is subsequently polished. Thereafter, the device is selectively etched to yield a (e.g., poly-silicon) gate pattern.
US08716092B2	Method for fabricating MOS transistors A method for fabricating a MOS transistor is disclosed. First, a semiconductor substrate having a gate thereon is provided. A spacer is then formed on the sidewall of the gate, and two recesses are formed adjacent to the spacer and within the semiconductor substrate. Next, the spacer is thinned, and epitaxial layer is grown in each of the two recesses. By thinning the spacer before the epitaxial layer is formed, the present invention could stop the epitaxial layer to grow against the sidewall of the spacer, thereby preventing problem such as Ion degradation.
US08716091B2	Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain A method for fabricating an upside-down p-FET includes: fully etching source and drain regions in a donor substrate by etching a silicon-on-insulator layer through buried oxide and partially etching the silicon substrate; refilling a bottom and sidewall surfaces of the etched source and drain regions with epitaxial silicide/germanide to form e-SiGe source and drain regions; capping the source and drain regions with self-aligning silicide/germanide; providing a silicide layer formed over the gate conductor line; providing a first stress liner over the gate and the e-SiGe source and drain regions; depositing a planarized dielectric over the self-aligning silicide/germanide; inverting the donor substrate; bonding the donor substrate to a host wafer; and selectively exposing the buried oxide and the e-SiGe source and drain regions by removing the donor wafer.
US08716083B2	Unitary floating-gate electrode with both N-type and P-type gates An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is formed in a polycrystalline silicon gate level, and includes n-type and p-type doped portions serving as gate electrodes of n-channel and p-channel MOS transistors, respectively; a plate of a metal-to-poly storage capacitor; and a plate of poly-to-active tunneling capacitors. Silicide-block silicon dioxide blocks the formation of silicide cladding on the electrode, while other polysilicon structures in the integrated circuit are silicide-clad. An opening at the surface of the analog floating-gate electrode, at the location at which n-type and p-type doped portions of the floating gate electrode abut, allow formation of silicide at that location, shorting the p-n junction.
US08716082B2	Semiconductor device, method of controlling the same, and method of manufacturing the same The present invention provides a system comprising a semiconductor device, a method of controlling the semiconductor device in the system, and a method of manufacturing the semiconductor device in the system. The semiconductor device includes: a semiconductor region located in a semiconductor layer formed on an isolating layer; an ONO film on the semiconductor region; bit lines on either side of the semiconductor region, which are located in the semiconductor layer, and are in contact with the isolating layer; a device isolating region on two different sides of the semiconductor region from the sides on which the bit lines are located, the device isolating region being in contact with the isolating layer; and a first voltage applying unit that is coupled to the semiconductor region. In this semiconductor device, the semiconductor region is surrounded by the bit lines and the device isolating region, and is electrically isolated from other semiconductor regions.
US08716081B2	Capacitor top plate over source/drain to form a 1T memory device A method and structure for a memory device, such as a 1T-SRAM, having a capacitor top plate directly over a doped bottom plate region. An example device comprises the following. An isolation film formed as to surround an active area on a substrate. A gate dielectric and gate electrode formed over a portion of the active area. A source element and a drain element in the substrate adjacent to the gate electrode. The drain element is comprised of a drain region and a bottom plate region. The drain region is between the bottom plate region and the gate structure. A capacitor dielectric and a capacitor top plate are over at least portions of the bottom plate region.
US08716077B2	Replacement gate compatible eDRAM transistor with recessed channel An eDRAM is fabricated including high performance logic transistor technology and ultra low leakage DRAM transistor technology. Embodiments include forming a recessed channel in a substrate, forming a first gate oxide to a first thickness lining the channel and a second gate oxide to a second thickness over a portion of an upper surface of the substrate, forming a first polysilicon gate in the recessed channel and overlying the recessed channel, forming a second polysilicon gate on the second gate oxide, forming spacers on opposite sides of each of the first and second polysilicon gates, removing the first and second polysilicon gates forming first and second cavities, forming a high-k dielectric layer on the first and second gate oxides, and forming first and second metal gates in the first and second cavities, respectively.
US08716074B2	Methods for forming isolated fin structures on bulk semiconductor material Methods are provided for fabricating a semiconductor device. A method comprises forming a layer of a first semiconductor material overlying the bulk substrate and forming a layer of a second semiconductor material overlying the layer of the first semiconductor material. The method further comprises creating a fin pattern mask on the layer of the second semiconductor material and anisotropically etching the layer of the second semiconductor material and the layer of the first semiconductor material using the fin pattern mask as an etch mask. The anisotropic etching results in a fin formed from the second semiconductor material and an exposed region of first semiconductor material underlying the fin. The method further comprises forming an isolation layer in the exposed region of first semiconductor material underlying the fin.
US08716073B2	Method for processing oxide semiconductor film and method for manufacturing semiconductor device To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film.
US08716069B2	Semiconductor device employing aluminum alloy lead-frame with anodized aluminum A semiconductor device comprises an aluminum alloy lead-frame with a passivation layer covering an exposed portion of the aluminum alloy lead-frame. Since aluminum alloy is a low-cost material, and its hardness and flexibility are suitable for deformation process, such as punching, bending, molding and the like, aluminum alloy lead frame is suitable for mass production; furthermore, since its weight is much lower than copper or iron-nickel material, aluminum alloy lead frame is very convenient for the production of semiconductor devices.
US08716067B2	Power device manufacture on the recessed side of a thinned wafer A recess is formed into a first side of a wafer such that a thinned center portion of the wafer is formed, and such that the central portion is surrounded by a thicker peripheral edge support portion. The second side of the wafer remains substantially entirely planar. After formation of the thinned wafer, vertical power devices are formed into the first side of the central portion of the wafer. Formation of the devices involves forming a plurality of diffusion regions into the first side of the thinned central portion. Metal electrodes are formed on the first and second sides, the peripheral portion is cut from the wafer, and the thin central portion is diced to form separate power devices. In one example, a first commercial entity manufactures the thinned wafers, and a second commercial entity obtains the thinned wafers and performs subsequent processing to form the vertical power devices.
US08716062B1	Array substrate and method of fabricating the same A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the array substrate includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer and an etch prevention layer formed on the gate insulating layer, wherein ends of the oxide semiconductor layer and ends of the etch prevention layer are aligned with each other; source and drain electrodes formed on the etch prevention layer; a passivation layer including a contact hole formed on the source and drain electrodes and on the gate insulating layer; and a pixel electrode formed on the passivation layer and through the contact hole.
US08716057B2	Organic EL display device An organic EL display device includes a pixel electrode which is disposed in each of first to third organic EL elements, a first light emission layer which includes a first dopant material having a first absorbance peak, the first light emission layer extending over the first to third organic EL elements and being disposed above the pixel electrode, a second light emission layer which includes a second dopant material having a second absorbance peak and is disposed above the first light emission layer, a third light emission layer which is disposed above the second light emission layer, a counter-electrode which is disposed above the third light emission layer, and a hole transport layer which is formed of a material having an absorbance bottom on a shorter wavelength side than the first absorbance peak and the second absorbance peak in absorbance spectrum characteristics of the hole transport layer.
US08716056B2	Method for forming chalcogenide switch with crystallized thin film diode isolation A three-dimensional memory array formed of one or more two-dimensional memory arrays of one-time programmable memory elements arranged in horizontal layers and stacked vertically upon one another; and a two-dimensional memory array of reprogrammable phase change memory elements stacked on the one or more two-dimensional memory arrays as the top layer of the three-dimensional memory array.
US08716044B2	Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer.
US08716040B2	Organic light emitting diode display and method for manufacturing the same An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.
US08716039B2	Monitoring apparatus and method for in-situ measurement of wafer thicknesses for monitoring the thinning of semiconductor wafers and thinning apparatus comprising a wet etching apparatus and a monitoring apparatus According to the invention, a monitoring device (12) is created for monitoring a thinning of at least one semiconductor wafer (4) in a wet etching unit (5), wherein the monitoring device (12) comprises a light source (14), which is designed to emit coherent light of a light wave band for which the semiconductor wafer (4) is optically transparent. The monitoring device (12) further comprises a measuring head (13), which is arranged contact-free with respect to a surface of the semiconductor wafer (4) to be etched, wherein the measuring head (13) is designed to irradiate the semiconductor wafer (4) with the coherent light of the light wave band and to receive radiation (16) reflected by the semiconductor wafer (4). Moreover, the monitoring device (12) comprises a spectrometer (17) and a beam splitter, via which the coherent light of the light wave band is directed to the measuring head (13) and the reflected radiation is directed to the spectrometer (17). The monitoring device (12) further comprises an evaluation unit (18), wherein the evaluation unit (18) is designed to determine a thickness d(t) of the semiconductor wafer (4) from the radiation (16) reflected by the semiconductor wafer (4) during thinning of the semiconductor wafer (4) by means of a method that is selected from the group consisting of a 1D-se FDOCT method, a 1D-te FDOCT method and a 1D-se TDOCT method.
US08716038B2	Microelectronic workpiece processing systems and associated methods of color correction Several embodiments of semiconductor systems and associated methods of color corrections are disclosed herein. In one embodiment, a method for producing a light emitting diode (LED) includes forming an (LED) on a substrate, measuring a base emission characteristic of the formed LED, and selecting a phosphor based on the measured base emission characteristic of the formed LED such that a combined emission from the LED and the phosphor at least approximates white light. The method further includes introducing the selected phosphor onto the LED via, for example, inkjet printing.
US08716037B2	Measurement of CMOS device channel strain by X-ray diffraction A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices.
US08716028B2	Control over hydrogen fluoride levels in oxide etchant The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.
US08716026B2	Methods and systems for determining composition and completion of an experiment Methods and systems for determining composition and completion of an experiment are provided. One-computer-implemented method for determining composition and completion of an experiment includes determining one or more characteristics of data acquired during the experiment and determining if the experiment is completed based on the one or more characteristics. One system configured to determine composition and completion of an experiment includes a processor configured to determine one or more characteristics of data acquired during the experiment and to determine if the experiment is completed based on the one or more characteristics. Another system configured to perform an experiment includes a measurement subsystem configured to acquire data during the experiment and a processor configured to determine one or more characteristics of the data during the experiment and to determine the composition of the experiment and if the experiment is completed based on the one or more characteristics.
US08716025B2	Drifting two-dimensional separation with adaption of second dimension gradient to actual first dimension condition A control device for a sample separation apparatus, the sample separation apparatus including a first separation unit and a second separation unit downstream of the first separation unit and supplied with the fluidic sample after treatment by the first separation unit. A control device is configured for controlling the first separation unit to execute a primary separation sequence within a time interval for separating the fluidic sample into fractions, and for controlling the second separation unit to execute secondary separation sequences within the time interval for further separating the separated fractions into sub-fractions, wherein the secondary separation sequences form part of a common sample separation method defined by a common specification of the sample separation involving a set of parameters, and adjusting, over a progress of the primary separation sequence, at least one parameter according to which at least one of the plurality of secondary separation sequences is executed.
US08716021B2	Use of replicators to prevent gene silencing Regulatory elements, specifically replicators and transgene constructs containing replicator nucleic acid sequences, are disclosed herein. Methods of using replicators and transgene constructs including replicators to inhibit, delay, or prevent gene silencing are also disclosed herein.
US08716017B2	Technologies, methods, and products of small molecule directed tissue and organ regeneration from human pluripotent stem cells Pluripotent human embryonic stem cells (hESCs) hold great potential for restoring tissue and organ function, which has been hindered by inefficiency and instability of generating desired cell types through multi-lineage differentiation. This instant invention is based on the discovery that pluripotent hESCs maintained under defined culture conditions can be uniformly converted into a specific lineage by small molecule induction. Retinoic acid induces specification of neuroectoderm direct from the pluripotent state of hESCs and triggers progression to neuronal progenitors and neurons efficiently. Similarly, nicotinamide induces specification of cardiomesoderm direct from the pluripotent state of hESCs and triggers progression to cardiac precursors and cardiomyocytes efficiently. This technology provides a large supply of clinically-suitable human neuronal or cardiac therapeutic products for CNS or myocardium repair. This invention enables well-controlled efficient induction of pluripotent hESCs exclusively to a specific clinically-relevant lineage for tissue and organ engineering and regeneration, cell-based therapy, and drug discovery.
US08716014B2	Adenovirus E1A fragments for use in anti-cancer therapies The present invention relates to an improved cancer therapy comprising co-administration with the E1A 1-80 transcription-repression domain activity. In addition, E1A 1-80 can act as a monotherapy against cancers that express elevated HER2/Neu or in combination with anti-HER2/Neu, chemo- or radiotherapeutic treatments.
US08716012B2	Alpha thymosin peptides as vaccine enhancers The present invention provides methods of vaccination as well as pharmaceutical combinations and kits for enhancing vaccine effectiveness, including for immunodeficient or immunecompromised patients, including non-responders and low-responders to vaccination. As disclosed herein, the invention relates to administering a vaccine and a regimen of thymosin alpha peptide so as to provide higher antibody titers, speed the development of such antibody titers, and/or to provide for a longer duration of such antibody titers, thereby providing a greater protective effect. In another aspect, the invention allows for reducing a vaccine dose, such as an influenza vaccine dose, by administration of a thymosin peptide regimen.
US08716011B2	Transcriptional control in Alicyclobacillus acidocaldarius and associated genes, proteins, and methods Isolated and/or purified polypeptides and nucleic acid sequences encoding polypeptides from Alicyclobacillus acidocaldarius are provided. Further provided are methods of modulating transcription or transcription or transcriptional control using isolated and/or purified polypeptides and nucleic acid sequences from Alicyclobacillus acidocaldarius.
US08716007B2	Portable high gain fluorescence detection system An instrument for fluorometric assays in liquid samples is disclosed. The instrument may include multiple optical channels for monitoring a first fluorophore associated with a target analyte and a second fluorophore associated with a control. The disclosed instrument finds utility in any number of applications, including microfluidic molecular biological assays based on PCR amplification of target nucleic acids and fluorometric assays in general.
US08716006B2	Multi-chamber rotating valve A fluid delivery system having a rotating reservoir insert and a cartridge body. The rotating reservoir insert having a plurality of reservoirs in communication with ports on the external surface of the insert. The ports are positioned such that upon rotation the port is in-line with a fluid extracting device, such as a syringe, capable of extracting fluid from the reservoir.
US08716005B2	Method and device to probe a membrane by applying an in-plane electric field The present invention disposes a membrane between two electrical conductive walls having a height at least as great as the thickness of the membrane. The conductive walls are fabricated on an electrically insolative chip base. The chip base has one or more through hole between the electrically conducting walls. The chip is placed inside a container having a well below the through hole of the electrically insolative base. At least one passageway extends from the well to the periphery of the container. This invention probes changes of the membrane as an in-plane electric field is applied between the conductive walls. The well may include various compounds while-other compounds can be placed in contact with the top of the membrane. The passageways are used to introduce substances into and out of the well.
US08716002B2	Re-engineering bacteria for ethanol production The invention provides recombinant bacteria, which comprise a full complement of heterologous ethanol production genes. Expression of the full complement of heterologous ethanol production genes causes the recombinant bacteria to produce ethanol as the primary fermentation product when grown in mineral salts medium, without the addition of complex nutrients. Methods for producing the recombinant bacteria and methods for producing ethanol using the recombinant bacteria are also disclosed.
US08716001B2	Trichoderma strains that induce resistance to plant diseases and/or increase plant growth A method for enhancing growth of plants comprising contacting a Trichoderma strain with the plant or a plant seed under conditions effective for the Trichoderma strain to colonize the roots of the plant or a plant grown from the plant seed, thereby creating a plant-Trichoderma system. The plant or plant seed is grown under conditions effective to sustain the plant-Trichoderma system in a planting medium and to enhance plant growth. The Trichoderma strain is selected from the group consisting of Trichoderma atroviride strain WW10TC4 (ATCC accession number PTA 9707), Trichoderma harzianum strain RR17Bc (ATCC accession number PTA 9708), Trichoderma harzianum strain F11 Bab (ATCC accession number PTA 9709), and combinations thereof. Methods of enhancing resistance of plants to abiotic stress, increasing nitrogen use efficacy in plants, reducing nitrous oxide emissions in air, reducing leaching of nitrates into soil and water, and enhancing sequestration of carbon from air are disclosed.
US08715999B2	Flaviviridae mutants comprising a deletion in the capsid protein for use as vaccines The present invention relates to a mutant virus of the family flaviviridae, comprising a deletion in the capsid protein of at least 20 successive amino acids, without any further deletion, substitution or insertion mutation except of the amino acids next to the deletion, which may be substituted.
US08715995B2	Polypeptides having beta-glucosidase activity and beta-xylosidase activity and polynucleotides encoding same The present invention relates to isolated polypeptides having beta-glucosidase activity, beta-xylosidase activity, or beta-glucosidase and beta-xylosidase activity and isolated polynucleotides encoding the polypeptides. The invention also relates to nucleic acid constructs, vectors, and host cells comprising the polynucleotides as well as methods of producing and using the polypeptides.
US08715993B2	Glycosidase enzymes A thermostable glycosidase enzymes derived from various Thermococcus, Staphylothermus and Pyrococcus organisms is disclosed. The enzymes are produced from native or recombinant host cells and can be utilized in the food processing industry, pharmaceutical industry and in the textile industry, detergent industry and in the baking industry.
US08715992B2	I-CreI meganuclease variants with modified specificity, method of preparation and uses thereof Method of preparing I-CreI meganuclease variants having a modified cleavage specificity, variants obtainable by said method and their applications either for cleaving new DNA target or for genetic engineering and genome engineering for non-therapeutic purposes. Nucleic acids encoding said variants, expression cassettes comprising said nucleic acids, vectors comprising said expression cassettes, cells or organisms, plants or animals except humans, transformed by said vectors.
US08715991B2	DNA polymerases with increased 3'-mismatch discrimination Disclosed are mutant DNA polymerases having increased 3′-mismatch discrimination relative to a corresponding, unmodified polymerase. The mutant polymerases are useful in a variety of disclosed primer extension methods. Also disclosed are related compositions, including recombinant nucleic acids, vectors, and host cells, which are useful, e.g., for production of the mutant DNA polymerases.
US08715988B2	Alkane oxidation by modified hydroxylases This invention relates to modified hydroxylases. The invention further relates to cells expressing such modified hydroxylases and methods of producing hydroxylated alkanes by contacting a suitable substrate with such cells.
US08715987B2	Solubilized phospholipids for stabilizing nucleic acid polymerases Compositions and methods are provided that relate to solubilized phospholipids and their use in stabilizing nucleic acid polymerases. For example, a phospholipid with a tail containing at least 8 carbons can be solubilized in the presence of an amphipathic molecule.
US08715984B2	Modified tRNA containing unnatural base and use thereof In the method for introducing a noncanonical amino acid residue into a desired position in a protein, the structure of tRNA is so modified as to have improved affinity for aminoacyl-tRNA synthetase or improved specificity to aminoacyl-tRNA synthetase. An unnatural base is contained at any position in tRNA, whereby the efficiency of aminoacylation of the tRNA with a noncanonical amino acid can be improved.
US08715979B2	Method of producing filamentous fungus culture product It is an object of the present invention to provide a method of adjusting productivity of enzymes, in particular, amylolytic enzymes, plant fiber degradation enzymes and proteolytic enzymes in a filamentous fungus culture product, by controlling releasing rate of nutrients from the culture raw material into the culture system when a filamentous fungus culture product is produced by culturing filamentous fungi in liquid medium containing as the culture raw material at least one selected from the group consisting of cereals, beans, tubers, amaranthus and quinoa. The present invention provides a method of producing filamentous fungus culture product by using liquid medium containing as culture raw material at least one selected from the group consisting of cereals, beans, tubers, amaranthus and quinoa comprising, culturing filamentous fungi while releasing rate of nutrients from the culture raw material into the culture system is controlled to adjust productivity of enzymes in the filamentous fungus culture product.
US08715978B2	Generation of hydrogen from hydrocarbon bearing materials Disclosed are strategies for the economical microbial generation of hydrogen, useful as an alternative energy source, from hydrocarbon-rich deposits such as coal, oil and/or gas formations, oil shale, bitumen, tar sands, carbonaceous shale, peat deposits and sediments rich in organic matter through the management of the metabolism of microbial consortia.
US08715975B2	Method for producing an alcohol using β-glucosidase variant enzymes The invention provides variants of the Azospirillum irakense CelA β-glucosidase that have improve β-glucosidase activity, particularly improved thermoactivity, compared to the wild type enzyme. The invention further provides related polynucleotides, vectors, host cell, and methods for making and using the variants.
US08715974B2	Method for producing scyllo-inositol It is intended to provide a novel NAD+-independent myo-inositol 2-dehydrogenase which converts myo-inositol into scyllo-inosose in the absence of NAD+; a novel enzyme scyllo-inositol dehydrogenase which stereospecifically reduces scyllo-inosose into scyllo-inositol in the presence of NADH or NADPH; and a novel microorganism which belongs to the genus Acetobacter or Burkholderia and can convert myo-inositol into scyllo-inositol. By using these enzymes or the microorganism, scyllo-inositol is produced. Furthermore, scyllo-inositol is purified by adding boric acid and a metal salt to a liquid mixture containing scyllo-inositol and a neutral saccharide other than scyllo-inositol to form a scyllo-inositol/boric acid complex, separating the complex from the liquid mixture, dissolving the thus separated complex in an acid to give an acidic solution or an acidic suspension and then purifying scyllo-inositol from the acidic solution or the acidic suspension.
US08715973B1	Organic acid-tolerant microorganisms and uses thereof for producing organic acids Organic acid-tolerant microorganisms and methods of using same. The organic acid-tolerant microorganisms comprise modifications that reduce or ablate AcsA activity or AcsA homolog activity. The modifications increase tolerance of the microorganisms to such organic acids as 3-hydroxypropionic acid (3HP), acrylic acid, and propionic acid. Further modifications to the microorganisms such as increasing expression of malonyl-CoA reductase and/or acetyl-CoA carboxylase provide or increase the ability of the microorganisms to produce 3HP. Methods of generating an organic acid with the modified microorganisms are provided. Methods of using acsA or homologs thereof as counter-selectable markers include replacing acsA or homologs thereof in cells with genes of interest and selecting for the cells comprising the genes of interest with amounts of organic acids effective to inhibit growth of cells harboring acsA or the homologs.
US08715962B2	Production of geranyl diphosphate The invention relates to recombinant geranyl diphosphate (GPP) synthases, genes encoding the synthases, vectors and host cells comprising the same. More particularly, the invention relates to a recombinant GPP synthase, which preferentially facilitates the production of GPP from its isoprenoid precursors and incorporating a recombinant GPP synthase into one or more terpene production pathways of a host organism.
US08715956B2	Method for the intensive extraction of cellular compounds from micro-organisms by continuous culture and extraction, and corresponding device A method is provided for extracting cellular compounds from micro-organisms. The method includes culturing the micro-organisms and extracting the cellular compounds from the micro-organisms. Each step is carried out in a continuous manner, wherein the extraction step is carried out separately from the culture step and in conditions of biocompatibility with the micro-organisms. The method further includes at least one step of recovering the cellular compounds and at least one step of recirculating the micro-organisms towards the culture step.
US08715954B2	Method of producing C3A serum-free clonal cell line A serum-free C3A clonal cell line and methods for generating the same are provided. The C3A cell line has a reduced doubling time in serum-free medium compared to a corresponding C3A cell line from which it is derived. Methods using the cells of the serum-free C3A clonal cell line for the production, expression and recovery of harvestable polypeptides, screening compounds for metabolic activity, studying enteric disease and for use in a bio-artificial liver device are also provided.
US08715952B2	Acetaminophen assay In general, the present invention provides a reliable assay for the quantitative determination of p-aminophenol in an aqueous sample. More particularly, the present invention provides a rapid enzyme-based assay for the quantitative determination of acetaminophen in a sample. The assay employs a xylenol chromophore and a catalyst that is preferably a weak oxidizer. The assay provides reliable results in the presence or absence of N-acetylcystiene (NAC) and can therefore be used to monitor acetaminophen levels during NAC treatment. Methods and kits for determining acetaminophen concentration in an aqueous sample are also provided.
US08715951B2	Highly sensitive immunoassays and antibodies for detection of blood factor VIII Disclosed are antibodies that selectively bind to blood coagulation factor FVIII, and highly sensitive immunological assays comprising these antibodies. Preferred assays can detect FVIII at about 3500-fold below the normal physiological levels, and have a wide array of applications including accurate monitoring of FVIII concentration in pharmaceutical products for treatment of blood coagulation disorders, and determination of FVIII levels in plasma of human patients, including those with blood coagulation disorders such as hemophilia.
US08715950B2	Kits for luminogenic and nonluminogenic multiplex assays Methods and kits to detect the presence or amount of at least one molecule for an enzyme-mediated reaction in a multiplex luminogenic/nonluminogenic assay are provided.
US08715948B2	Granzyme A and granzyme B diagnostics A method for identifying a subject being at risk for or having a chronic inflammatory disease, fibrillinopathy, atherosclerosis, or coronary artery disease is provided. The method may include determining the concentration of GrA and/or GrB in a blood or serum sample from said subject; and comparing the concentrations to the corresponding concentration in a control sample, wherein an elevated concentration of GrA and/or GrB may be indicative of a chronic inflammatory disease, fibrillinopathy, atherosclerosis, or coronary artery disease. The method may further include identifying concentrations of fibrinogen, elastin and/or fibrillin.
US08715944B2	Fluorochromes for organelle tracing and multi-color imaging Provided are compounds, methods and kits for identifying in cells of interest organelles including nuclei and a wide variety of organelles other than nuclei (non-nuclear organelles), as well as cell regions or cell domains. These compounds and methods can be used with other conventional detection reagents for identifying the location or position or quantity of organelles and even for distinguishing between organelles in cells of interest.
US08715941B2	Antibodies to LRP6 Anti-LRP6 antibodies and antigen-binding fragments thereof, as well as pharmaceutical compositions comprising such antibodies and antigen-binding fragments are described. These anti-LRP6 antibodies can be used to enhance Wnt activity and/or antagonize Dkk1 activity. Also described are methods of therapy using such antibodies and antigen-binding regions to bind modulate Wnt/LRP6 signaling to promote tissue homeostasis, regeneration and repair in diseases such as, but not limited to, bone disorders, such as osteoporosis, rheumatoid arthritis, and osteolytic lesions caused by osteoarthritis and multiple myeloma, gastrointestinal disease and wound healing.
US08715937B2	Mutation detection assay A method of sample analysis is provided. In certain embodiments, the method involves: a) amplifying a product from a sample that comprises both wild type copies of a genomic locus and mutant copies of the genomic locus that have a point mutation relative to the wild type copies of the genomic locus, to produce an amplified sample, where: i. the amplifying is done using a first primer and a second primer; and ii. the first primer comprises a 3′ terminal nucleotide that base pairs with the point mutation and also comprises a nucleotide sequence that is fully complementary to a sequence in the locus with the exception of a single base mismatch within 6 bases of the 3′ terminal nucleotide; and b) detecting the presence of the product in the amplified sample using a flap assay that employs an invasive oligonucleotide. A kit for performing the method is also provided.
US08715933B2	Assay methods using nicking endonucleases Assay methods and apparatus for the analysis of biopolymers are disclosed. The assays employ nicking endonucleases to enable the generation of flaps on target biomolecules which are detected in nanopore or fluidic channel devices. Identification of flap locations enables a map of the target biomolecule to be derived.
US08715927B2	Inhibition of DNA polymerases to augment chemotherapeutic and antimicrobial agents Disclosed herein is the identification of human DNA polymerase κ (pol κ) as the polymerase that mediates repair of DNA containing interstrand cros slinks (ICLs). The mechanism of action of a number of chemotherapeutic and antimicrobial agents is the induction of ICLs. Thus, provided herein is a method of enhancing the efficacy of a chemotherapeutic or antimicrobial agent in a subject, including selecting a subject in need of treatment with an ICL -inducing agent and administering to the subject an ICL-inducing agent and a therapeutically effective amount of an inhibitor of pol κ. Also provided is a composition for treating a hyperproliferative disease, an autoimmune disease or an infectious disease, comprising an ICL-inducing agent and an amount of an inhibitor of pol κ sufficient to enhance the efficacy of the ICL-inducing agent. Further provided is a method of identifying a DNA polymerase inhibitor.
US08715926B2	Biomarkers for the detection of head and neck tumors A method of detecting the presence of specific human papilloma virus and host cell biomarkers associated with head and neck tumors in biological samples, like saliva, blood or biopsy tissue, obtained from a subject.
US08715925B2	Genetic test for the identification of carriers of complex vertebral malformations in cattle Genetic markets for identifying bovine carriers of complex vertebral malformation (CVM) disease gene are described. The genetic markers, including the microsatellite markers, BM4129, INRAA003, BMS2790, ILSTS029, INRA123, BM220, HUJ246, BMS862, BMS937, BL1048, BMS2095 and BMS1266 and the bovine SLC35A3 gene, are located on bovine chromosome BTA3. The G/T polymorphism at position 559 of the bovine SLC35A3 gene is identified as being causative and diagnostic for CVM in cattle.
US08715918B2	Thick film resists Thick film photoresist compositions are disclosed.
US08715917B2	Simultaneous photoresist development and neutral polymer layer formation A photoresist layer is lithographically exposed to form lithographically exposed photoresist regions and lithographically unexposed photoresist regions. The photoresist layer is developed with a non-polar or weakly polar solvent including a dissolved neutral polymer material. A neutral polymer layer is selectively formed on physically exposed surfaces of a hard mask layer underlying the photoresist layer. The neutral polymer layer has a pattern corresponding to the complement of the area of remaining portions of the photoresist layer. The remaining portions of the photoresist layer are then removed with a polar solvent without removing the neutral polymer layer on the hard mask layer. A block copolymer material can be subsequently applied over the neutral polymer, and the neutral polymer layer can guide the alignment of a phase-separated block copolymer material in a directed self-assembly.
US08715912B2	Method for producing a high resolution resist pattern on a semiconductor wafer In one disclosed embodiment, a method for producing a high resolution resist pattern on a semiconductor wafer comprises depositing a blanket layer of material on a semiconductor wafer, forming a resist interaction substrate on the blanket layer of material, forming a resist layer of a pre-determined thickness on the resist interaction substrate, exposing the resist layer to a patterned radiation, and developing the resulting high resolution resist pattern. In one embodiment, patterned radiation is provided by an extreme ultraviolet (EUV) light source. In other embodiments, patterned radiation may be provided by an electron beam, or ion beam, for example. In one embodiment, the resist layer comprises a chemically amplified resist utilizing a photogenerated acid (PGA), and having a sublayer. In other embodiments, the resist layer includes an additive, for example, fullerite. One disclosed embodiment involves use of an ultra-thin resist layer in combination with a gold resist interaction substrate.
US08715911B2	Coating composition for DUV filtering, method of forming photoresist pattern using the same and method of fabricating semiconductor device by using the method Provided are a coating composition for deep ultraviolet (DUV) filtering during an extreme ultraviolet (EUV) exposure, the coating composition including about 100 parts by weight of a solvent including a first solvent (the first solvent being an alcoholic solvent); and about 0.05 parts by weight to about 5 parts by weight of a coating polymer having a degree of absorption of about 50%/μm or greater with respect to 193-nm incident light.
US08715910B2	Method for exposing an area on a substrate to a beam and photolithographic system Embodiments of the invention describe a method for exposing an area on a substrate to a beam. The method includes adjusting a focus offset of the beam with respect to the area on the substrate, tilting the beam or tilting the substrate, and exposing the area on the substrate with the beam, thereby generating locations within the area exposed with different foci. Furthermore embodiments describe computer programs for controlling a photolithographic system to do the same and a photolithographic system for doing the same.
US08715909B2	Lithography systems and methods of manufacturing using thereof Multi-beam lithography systems and methods of manufacturing semiconductor devices using the same are disclosed. For example, the method utilizes non-coincidence of boundaries of electrical fields emanating from chrome on glass or phase shifted mask features distributed over two masks for the optimization of lithographic process windows, side lobe suppression, or pattern orientation dependent process window optimization employing one mask with polarization rotating film on the backside.
US08715908B2	Process of using an imaging element having a photoluminescent tag The invention relates to an imaging element and a method of using the imaging element to form a recording element. The imaging element includes a composition sensitive to actinic radiation from a source of radiation having a range of wavelengths and a photoluminescent tag that is responsive to at least one wavelength from the source of radiation. The photoluminescent tag can be used to authenticate the identity of the element, provide information about the element, and/or to establish one or more conditions in a device used to prepare the recording element from the imaging element.
US08715907B2	Developable bottom antireflective coating compositions for negative resists A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist and the NDBARC layer become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.
US08715903B2	Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same An actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a fluorine-containing compound capable of generating an acid upon irradiation with an actinic ray or radiation, wherein the acid has a polarity converting group, and the fluorine content of the fluorine-containing compound (A) is 20% or more based on the molecular weight of the fluorine-containing compound (A).
US08715900B2	Self-imageable layer forming polymer and compositions thereof Copolymers and compositions thereof useful for forming self-imageable films encompassing such copolymers are disclosed. Such copolymers encompass norbornene-type repeating units and maleic anhydride-type repeating units where at least some of such and maleic anhydride-type repeating units have been ring-opened. The films formed from such copolymer compositions provide self imageable, low-k, thermally stable layers for use in microelectronic and optoelectronic devices.
US08715888B2	Method for producing holographic photopolymers on polymer films The invention relates to a method for producing novel photopolymers on the basis of prepolymer-based polyurethane compositions that are suitable for producing holographic media, in particular for the visual display of images.
US08715887B2	Complex holograms, method of making and using complex holograms A method of making a hologram includes recording a first hologram in a holographic recording medium at a first deformation ratio; changing the first deformation ratio to a second deformation ratio that is different from the first deformation ratio; and recording a second hologram in the holographic recording medium at the second deformation ratio to form a recorded holographic medium.
US08715886B1	Method for making a fuel cell The invention is a novel solid oxide fuel cell (SOFC) stack comprising individual bi-electrode supported fuel cells in which an electrolyte layer is supported between porous electrodes. The porous electrodes may be made from graded pore ceramic tape that has been created by the freeze cast method followed by freeze-drying. Each piece of graded pore tape later becomes a graded pore electrode scaffold that, subsequent to sintering, is made into either an anode or a cathode. The electrode scaffold comprising the anode includes a layer of liquid metal. The pores of the electrode scaffolds gradually increase in diameter as the layer extends away from the electrolyte layer. As a result of this diameter increase, any forces that would tend to pull the liquid metal away from the electrolyte are reduced while maintaining a diffusion path for the fuel. Advantageously, the fuel cell of the invention may utilize a hydrocarbon fuel without pre-processing to remove sulfur.
US08715880B2	Solid oxide fuel cell Provided is a solid oxide fuel cell (SOFC), including: a fuel electrode for allowing a fuel gas to be reacted; an air electrode for allowing a gas containing oxygen to be reacted; an electrolyte film provided between the fuel electrode and the air electrode; and a reaction prevention film provided between the air electrode and the electrolyte film. The porosity of the reaction prevention film is less than 10%, particularly preferably “closed pore-ratio” is 50% or more. The diameter of closed pores in the reaction prevention film is 0.1 to 3 μm. The reaction prevention film includes closed pores each containing a component (e.g., Sr) for the air electrode. This can provide an SOFC in which a decrease in output due to an increase in electric resistance between an air electrode and a solid electrolyte film hardly occurs even after long-term use.
US08715874B2	Fuel cell system and method for controlling fuel cell system A fuel cell system includes a fuel cell having an anode, a cathode, and an electrolyte membrane disposed therebetween. An oxidant gas supplying device supplies oxidant gas to the cathode, an oxidant gas backpressure regulating device regulates the pressure of the oxidant gas at the cathode according to a valve opening, and a pressure detecting device detects the oxidant gas pressure at the cathode. During a start-up fuel gas disposal process, a controller controls the oxidant gas supplying device to supply the oxidant gas at a standard oxidant gas flow, controls the valve opening of the oxidant gas backpressure regulating device to a first valve opening, and controls the valve opening of the oxidant gas backpressure regulating device to a second valve opening which is greater than the first valve opening when the oxidant gas pressure detected by the pressure detecting device reaches an elevation target pressure.
US08715872B2	Fuel cell system having decreased deterioration during initiation A fuel cell system can be initiated in shorter time while minimizing the deterioration of a fuel cell. The fuel cell system includes a fuel cell stack having a fuel electrode, an oxidizer electrode and an electrolyte membrane disposed there between, the fuel cell producing electricity by an electrochemical reaction of a fuel gas and an oxidizer gas, which are supplied to the fuel electrode and the oxidizer electrode, respectively; a fuel gas supplying device for supplying the fuel gas to the fuel cell stack; an oxidizer gas supplying device for supplying the oxidizer gas to the fuel cell stack; a current controlling device for extracting a current from the fuel cell stack; and a voltage sensor disposed in at least two of the fuel cell stacks. A controller controls the current controlling device such that a minimum voltage, which is obtained from the voltage sensor after a fuel gas is supplied to the fuel electrode without supplying the oxidizer gas to the oxidizer electrode at the time of initiating, becomes zero volts or more. Then, the oxidizer gas is supplied to the oxidizer to start producing electricity.
US08715870B2	Gas reclaiming system and method A gas reclaiming system is disclosed. The gas reclaiming system includes a getter device adapted to receive mixed gases and separate the mixed gases into at least one gas of interest and constituent gases. A recirculation loop is disposed in fluid communication with the getter device and adapted to receive the at least one gas of interest from the getter device. A gas reclaiming method is also disclosed.
US08715867B1	Deployable microbial fuel cell and methods An anode/cathode system is disclosed for use in a Benthic microbial fuel cell. Carbon cloth forms at least a portion of the anode and is disposed on one side of a water oxygen impermeable layer, which can be weighted around a periphery thereof to hold the anode against a water-sediment interface. Carbon cloth flaps or strands can be attached to the other side of the impermeable layer to form the cathode. The anode and cathode can be divided into sections with each section having an electrical lead coupled thereto. The system is deployed onto the seafloor with the anode side in contact with the water-sediment interface.
US08715865B2	Non-aqueous electrolytic solutions and electrochemical cells comprising the same Non-aqueous electrolyte solutions capable of protecting negative electrode materials such as lithium metal and carbonaceous materials in energy storage electrochemical cells (e.g., lithium metal batteries, lithium ion batteries and supercapacitors) include an electrolyte salt, a non-aqueous electrolyte solvent mixture, an unsaturated organic compound 4-methylene-1,3-dioxolan-2-one or 4,5-dimethylene-1,3-dioxolan-2-one, and other optional additives. The 1,3-dioxolan-2-ones help to form a good solid electrolyte interface on the negative electrode surface.
US08715857B2	Negative electrode active material for lithium ion battery, and negative electrode for lithium ion battery using the same The present invention relates to a negative electrode active material including an Si—Sn—Fe—Cu based alloy, in which an Si phase has an area ratio in a range of from 35 to 80% in the entire negative electrode active material, the Si phase is dispersed in a matrix phase, the matrix phase contains an Si—Fe compound phase crystallized around the Si phase and further contains an Sn—Cu compound phase crystallized to surround the Si phase and the Si—Fe compound phase, the Si—Fe compound phase is crystallized in a ratio of from 35 to 90% in terms of an area ratio in the entire matrix phase, and the matrix phase further contains an Sn phase unavoidably crystallized in the matrix phase in a ratio of 15% or less in terms of an area ratio in the entire matrix phase.
US08715856B2	Lithium secondary battery containing cathode materials having high energy density and organic/inorganic composite porous membrane Disclosed is a secondary battery including a cathode, an anode, a membrane and an electrolyte, wherein the cathode contains a mixture of a first cathode material defined herein and a second cathode material selected from the group consisting of a second-(a) cathode material defined herein and a second-(b) cathode material defined herein, and a combination thereof, wherein a mix ratio of the two cathode materials (first cathode material: second cathode material) is 50:50 to 90:10, and the membrane is an organic/inorganic composite porous membrane including (a) a polyolefin-based membrane substrate and (b) an active layer in which one or more areas selected from the group consisting of the surface of the substrate and a portion of pores of the substrate are coated with a mixture of inorganic particles and a binder polymer, wherein the active layer has a structure in which the inorganic particles are interconnected and fixed through a binder polymer and porous structures are formed by the interstitial volume between the inorganic particles.
US08715853B1	Aluminum batteries comprising metal-oxide, metal-fluoride, metal-sulfide, or sulfur cathodes Variations of the invention provide an improved aluminum battery consisting of an aluminum anode, a non-aqueous electrolyte, and a cathode comprising a metal oxide, a metal fluoride, a metal sulfide, or sulfur. The cathode can be fully reduced upon battery discharge via a multiple-electron reduction reaction. In some embodiments, the cathode materials are contained within the pore volume of a porous conductive carbon scaffold. Batteries provided by the invention have high active material specific energy densities and good cycling stabilities at a variety of operating temperatures.
US08715852B2	Electrolyte for lithium secondary battery and lithium secondary battery including the same An electrolyte for a lithium secondary battery and a lithium secondary battery including the same are provided. The electrolyte includes a non-aqueous organic solvent, lithium salt, and an additive that is either a dicarboxylic acid anhydride and a halogenated ethylene carbonate or a diglycolic acid anhydride and a halogenated ethylene carbonate.
US08715849B2	Microporous polymer membrane The invention relates to a microporous membrane which comprises polyethylene, the microporous membrane having a differential pore volume curve with an area under the curve over the range of pore diameters of from about 100 nm to about 1,000 nm that is 25% or more of a total area under the curve over the range of pore diameters of from about 10 nm to about 1,000 nm.
US08715847B2	Lithium-sulfur battery with polysulfide confining layer The present invention provides a lithium-sulfur battery with a polysulfide confining layer, which can prevent loss of polysulfide formed on the surface of a positive electrode during charge and discharge reactions, thus improving the durability of the battery. For this purpose, the present invention provides a lithium-sulfur battery including a hydrophilic polysulfide confining layer interposed between a positive electrode and a separator to prevent a polysulfide-based material from being lost from the surface of the positive electrode during discharge.
US08715840B2	Reduced spacing recording apparatus Aspects include recording media with enhanced areal density through reduction of head media spacing, head keeper spacing, or head to soft underlayer spacing. Such aspects comprise replacing currently non-magnetic components of devices, such as interlayers and overcoats with components and compositions comprising magnetic materials. Other aspects relate to magnetic seed layers deposited within a recording medium. Preferably, these aspects, embodied as methods, systems and/or components thereof reduce effective magnetic spacing without sacrificing physical spacing.
US08715839B2	Electrical components and method of manufacture An electrical component provides a ceramic element located on or in a dielectric substrate between and in contact with a pair of electrical conductors, wherein the ceramic element includes one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.5 mol % throughout the ceramic element. A method of fabricating an electrical component, provides or forming a ceramic element between and in contact with a pair of electrical conductors on a substrate including depositing a mixture of metalorganic precursors and causing simultaneous decomposition of the metal oxide precursors to form the ceramic element including one or more metal oxides.
US08715837B2	Black-coated steel sheet, worked material, and panel for flat-panel television A black-coated steel sheet exhibits good bendability and a good appearance after press working is provided. Zinc based plating layers, a chromium-free chemical conversion coating disposed on the zinc based plating layer, and a colored single organic coating which is disposed on the chemical conversion coating and which contains a polyester resin having a hydroxyl value of 10 KOHmg/g or more, an imino-containing melamine resin, and 5 to 15 percent by mass of carbon black are included, wherein the glass transition temperature (Tg) of the organic coating is 40° C. or higher, the film thickness is 10 μm or less, and the hardness is 200 N/mm2 or more.
US08715835B2	Tolerance strips A tolerance strip is formed a strip of resilient material with corrugations, the corrugations extending transversely across the full width of the strip, the corrugations defining crests with troughs between adjacent corrugations, a central portion of the corrugations being of substantially uniform height across the strip, portions of the corrugations adjacent each longitudinal edge of the strip decreasing in height towards the edge of the strip. In one form the corrugations are flat longitudinally of the strip at the crests and/or troughs.
US08715834B2	Continuous steel strapping seals A strip of multiple seals, each seal for sealing around overlying courses of strapping material to form a seal of the strapping material onto itself at the overlying courses includes an elongated strip of ductile metal. The strip has a longitudinal direction having edges and defining a longitudinal axis parallel to the edges, and a transverse direction normal to the longitudinal axis. Each seal defines a respective transverse axis. The strip has a plurality of substantially identical slots formed in the transverse direction to define the respective seals. The slots extend toward, but not to, the edges of the strip and define connecting portions between ends of the slot and the respective edges. The slots are equally spaced from one another in a longitudinal direction to define the respective seals.
US08715825B2	Two-piece pull-tab sealing member with improved heat distribution for a container A two-piece tabbed seal and liner as well as a method of manufacture is provided for sealing containers such as bottles, jars and the like. The two-piece tabbed seal is formed with a lower sheet-like structure having a non-foam, heat-distributing layer thereon.
US08715817B2	Glass ceramic plate A low-expansion glass ceramic plate, in which a black coating is applied directly or indirectly to at least some areas of at least one side of the plate and the coating contains precious metal. In order to produce a glass ceramic plate of this type that is opaque, while simultaneously retaining a sufficient degree of its thermal stability, according to this invention, the precious metal content in the coating is ≧50 wt. %, the bismuth oxide content in the coating is at most 20 wt. %, and the layer thickness of the coating is at least 200 nm.
US08715810B2	Coated article and method for making the same A coated article is described. The coated article includes a substrate, a magnesium oxide-alumina compound layer formed on the substrate, and an anti-fingerprint layer formed on the magnesium oxide-alumina compound layer. The anti-fingerprint layer is a layer of magnesium-aluminum-oxygen-fluorine having the chemical formula of MgAlOxFy, wherein 0
US08715807B2	Fused grains of oxides comprising Al, Ti and Mg and ceramic products comprising such grains A mixture of fused grains mainly comprising or composed of an oxide phase of pseudo-brookite type and comprising titanium, aluminum and magnesium, the fused grains having the following chemical composition, in weight percentages on the basis of the oxides: less than 55% of Al2O3; more than 30% and less than 70% of TiO2; more than 1% and less than 15% of MgO, the fused grains also corresponding to the following composition, in molar percentages and on the basis of the single oxides Al2O3, TiO2, MgO: 180≦3t+a≦220, a≦50, m=100−a−t, in which: a is the molar percentage of Al2O3; t is the molar percentage of TiO2; m is the molar percentage of MgO. A ceramic product obtained from such fused grains.
US08715806B2	Formable protector A sandwich construction including a core having inner and outer surfaces and comprising a sheet material oriented extending between the inner and outer core surfaces in a configuration providing resistance to crushing in a direction between the inner and outer surfaces. The formable protector further includes an outer facing layer of a sheet material adhered to the outer surface of the core layer; and an inner facing layer adhered to the core inner surface and being sufficiently deformable to conform to a sharp edge of a protected object when the protector is bent therearound, and being substantially more compressible or stretchable than the outer facing layer. The core has sufficient resistance to crushing and the outer facing layer is sufficiently durable for causing the core to partially crush when the protector is bent around the sharp edge while partially retaining crushing resistance for protecting the sharp edge against impact.
US08715805B2	Optical recording medium An object of the present invention is to provide a recordable recording medium that suppresses increase in terminal noise and does not generate a BCA signal read error. The present invention provides a recordable optical recording medium comprising a substrate as well as at least a reflection layer, recording layer and light transmission layer provided on the substrate, wherein the recording layer of said optical recording medium contains (a) an azo metal complex dye and (b) another dye whose DSC decomposition heat value is 50 cal/g to 200 cal/g and λmax in TFP solution is 250 to 400 nm.
US08715800B2	Apparatus and method to repair the junction of a sewer main line and lateral pipe A liner assembly and method for lining a damaged pipe junction between a main and lateral pipe is provided. The liner assembly includes a main liner member and a lateral liner tube. A collar disposed near the juncture between the main liner member and lateral liner tube is impregnated with a liquid hydrophobic or hydrophilic material capable of curing in a flexible or rigid state with the material expanding in the presence of water. The hydrophobic or hydrophilic material can also be applied without the use of the collar. When the liner assembly is pressed against the main and lateral pipes, a portion of the hydrophilic or hydrophobic material is forced into the damaged pipe junction.
US08715799B2	Thermoplastic polyurethane with antistatic properties The present invention relates to antistatic, thermoplastic polyurethane comprising ethylmethylimidazole ethyl sulfate, to a process for production of antistatic, thermoplastic polyurethane comprising ethylmethylimidazole ethyl sulfate, and to the use of ethylmethylimidazole ethyl sulfate for the production of antistatic, thermoplastic polyurethane.
US08715795B2	Molded plastic part In a molded plastic part 1 including a body 2 constituting a design surface 2a and a reinforcing structure 3 projectingly provided on a design back surface 2b of the body 2, the body 2 and the reinforcing structure 3 being integrally molded by injection molding, the reinforcing structure 3 is formed by a combined body of a plurality of transverse ribs 7a, 7b, 7c and 7d which are arranged at appropriate intervals in the resin flow direction at the time of injection molding in the direction intersecting with the resin flow and longitudinal ribs 6p and 6q which extend at right angles to the transverse ribs and connect the transverse ribs to each other. The transverse ribs are connected to the design back surface 2b, and a gate 8 for injection molding is set on one of the transverse ribs. The longitudinal ribs are disposed so as to be separated from the design back surface 2b.
US08715785B2	Method for reinforcing hollow glass articles The invention relates to: 1) a process for the mass production of hollow glass articles which, when positioned beside one another with the same orientation in one and the same plane, are liable to come into mutual contact along a surface of revolution, characterized in that after they have left the annealing lehr, they are rotated through one turn at least along the axis of said surface of revolution, this surface then being coated, by a process without any solid contact, with an additional layer which reduces the coefficient of friction; 2) a hollow glass article as obtained by this process; and 3) a packaging assembly of such articles.
US08715779B2	Enhanced glass impact durability through application of thin films Apparatus, systems and methods for characteristics of glass components through use of one or more coatings are disclosed. The coatings are typically thin coatings, such as thin film coatings. The coatings can serve to increase strength of the glass components and/or provide durable user interfacing surfaces. Accordingly, glass articles that have received coatings are able to be not only thin but also sufficiently strong so as to resist damage from impact events. The coated glass articles are well suited for use in consumer products, such as consumer electronic devices (e.g., electronic devices).
US08715771B2	Coated stent and method of making the same A coated implantable medical device and a method of coating an implantable medical device is disclosed, the method includes applying a composition onto the device and drying the composition at elevated temperature in an environment having increased relative humidity. A pre-screening method for a manufacturing lot of coated stents to determine the number of drug coating layers for a desired drug release rate is disclosed. The method including coating and testing small groups of stents, and applying the results of the tests to determine the number of drug coating layers to apply to the manufacturing lot of stents.
US08715770B2	Apparatuses and methods for microparticle dry coating of surfaces A device for coating dry powder microparticles onto a surface may include a jet mill configured to mill dry powder particles into microparticles having a desired aerodynamic diameter and to deaggregate the microparticles, a feed hopper structured and arranged to feed dry powder particles to the jet mill, a surface configured to receive dry powder microparticles and an exit nozzle associated with the jet mill. The exit nozzle may be arranged to direct deaggregated micronized dry powder particles from the jet mill to the surface to be coated. The device may further include a holder structured and arranged to hold an item, wherein the item includes the surface. In some aspects of the device, the item may be a film.
US08715769B2	Preventing diseases in infants delivered via caesarean section The present invention provides the use of a composition comprising non-digestible oligosaccharide for the manufacture of a composition for enteral administration to an infant delivered via caesarean section.
US08715765B2	Process of treating biomass A process of treating biomass such as sugar cane bagasse utilizing practically all components of the biomass to produce livestock feed and fuel biomass. Raw bagasse is ensiled for 50-60 days, dried, mechanically separated from soil particles and ground together with plant-derived lignocellulosic materials, pelletized feed material, agricultural processing residues, or by-products at a ratio of 2:1. The resultant ground material is used as cattle feed, feed additives, fuel pellets and for other purposes.
US08715757B2	Systems and methods for processing eggs A package of eggs is disclosed which comprises a plurality of eggs arranged in one or more rows. The eggs are arranged in the package so that a long axis of each egg in the package is tilted toward the back of the package so as to be at least slightly offset from vertical. In some embodiments, each of the eggs in the package may have information laser marked on it in substantially the same location as the other eggs in the package, and the eggs may be oriented in the package such that information marked on each egg faces substantially the same direction as the information marked on the other eggs in the package.
US08715756B2	Method and system for recovering and preparing glacial water Methods and systems for grouping, recovering, and processing ice obtained from an ice source, i.e., a glacier, ice sheet, ice cap, etc., are described herein. In particular, the ice obtained from the ice source is separated and grouped according to common unique properties and processed as a beverage for consumption having the same unique properties.
US08715751B2	Artemisinins in the clinical and veterinary management of kinetoplastid infections The invention relates to the treatment of kintoplastid infections by administering a pharmaceutical composition containing an extract from the plant Artemisia annua. The invention also relates to isolated, semi-synthetic and synthetic artemisinins that show improved efficacy in treating kinetoplastid infections. This invention also relates to a method of treating kintoplastid infections with artelinic acid and artemisinins and where Artelinic acid is administered orally.
US08715747B2	Biocomposition stimulant of the immune system, anti-tumor and anti-HIV Provided is a herbal composition of plants obtained from non-domestic wild sources by means of meristems and the extracts thereof obtained using improved processes, in which the extracts and the active principles thereof generate a synergism demonstrating anti-inflammatory, antiviral nutritional supplement, immune system simulating, prostatic health promoting and supporting properties for improving quality of life with a wide range of benefits in individuals with chronic terminal diseases.
US08715745B2	Fungicidal compositions including hydrazone derivatives and copper The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.
US08715738B2	Fullerene-silica nanoparticles with improved fluorescence, preparation method thereof and use thereof The present invention relates to fullerene-silica nanoparticles with improved fluorescence, a preparation method of the fullerene-silica nanoparticles, and use thereof. More specifically, the present invention relates to fullerene-silica nanoparticles with improved fluorescence in which fullerene and silica are covalently linked, a preparation method of the fullerene-silica nanoparticles, and use thereof. The preparation method of the fullerene-silica nanoparticles comprises the steps of: adding a surfactant to a non-polar organic solvent and a polar solvent and stirring them to form reverse micelles (step 1); adding fullerene to the reverse micelles formed in the step 1 and stirring them (step 2); and adding a silica precursor and a catalyst to a reaction solution containing the fullerene prepared in the step 2 and stirring them to prepare fullerene-silica nanoparticles (step 3). According to the present invention, fullerene-silica nanoparticles in the form of a uniform spherical shape of tens of nanometers can be prepared. As such prepared fullerene-silica nanoparticles have a large surface area due to a nanometer-sized structure, they have good reactivity. Compared with heavy metals or metal nanoparticles, the fullerene-silica nanoparticles, because of using silica, are harmless to a living body. Further, as the fullerene-silica nanoparticles exhibit strong fluorescence, they can be used as a contrast agent for in-vivo imaging or as a drug delivery carrier.
US08715735B2	Stabilised supersaturated solids of lipophilic drugs Methods for improving solubility and bioavailability of lipophilic compounds are described. Particularly, described are stabilized supersaturated solid solutions, particularly in power from, of lipophilic drugs, such as steroidal molecules.
US08715732B2	Nucleic acid hydrogel via rolling circle amplification Methods and compositions are provided for producing nucleic acid-based compositions. Methods include enzyme catalyzed or nucleic acid polymer conjugation. Compositions include nucleic acid-containing hydrogels which can be elongated via rolling circle amplification. The hydrogels can encapsulate bioactive agents for drug delivery.
US08715729B2	Rapidly disintegrating, solid coated dosage form Rapidly disintegrating, solid coated dosage form comprising a solid core consisting of at least 60% by weight of an auxiliary mixture, up to 40% by weight of at least one active ingredient, and optionally further auxiliaries, coated with at least one film coating comprising completely or partially hydrolyzed, rapidly water-soluble polyether-vinyl ester graft polymers, methods for the production thereof, and their use.
US08715727B2	Tablet for pulsed delivery A pharmaceutical tablet comprising an immediate release portion containing an active ingredient and a delayed release portion, wherein the delayed release portion comprises an enteric-coated layer and within the enteric-coated layer there is at least one member selected from the group consisting of enteric-coated microparticle dosage forms containing an active ingredient and enteric-coated mini-tablet dosage forms containing an active ingredient, is disclosed.
US08715726B2	Pharmaceutical composition comprising tramadol and ketoprofen in association The present invention relates to a pharmaceutical composition comprising a combination of active principles. More specifically: a stable pharmaceutical composition comprising a combination of tramadol and ketoprofen. Furthermore, a combination in solid form in which the active principles are vehicled in pharmaceutical forms and/or products that prevent contact between them. Complementarily, the present invention also relates to the combined use of ketoprofen and tramadol in the preparation of an oral medicine useful for relieving pain as well as a method for relieving pain with an oral pharmaceutical composition comprising a combination of tramadol and ketoprofen.
US08715725B2	Secure tracking of tablets The present invention relates to a verification method for tracking and tracing tablets, particularly pharmaceutical tablets. It further relates to a visible secure marking or information that is a part of such tablet (10). The invention further relates to tablets suitable for such verification method, processes for manufacturing such tablets, and methods for reading the information.
US08715721B2	Controlled release hydrocodone A solid oral controlled-release dosage form of hydrocodone is disclosed, the dosage form comprising an analgesically effective amount of hydrocodone or a pharmaceutically acceptable salt thereof, and controlled release material.
US08715720B2	Cloud mixer and method of minimizing agglomeration of particulates An apparatus and a method for dispersing particulate materials prone to agglomeration, in a liquid. Particulate materials are exposed to a liquid and put into that liquid to form a suspension or a dispersion in a controlled method thereby minimizing agglomerates. The method uses mechanical/hydro mixing that prevents the physical deterioration of the particulate material and inhibits agglomeration of the particles. In many cases, these materials may be nanomaterials. Almost all particulate materials can be handled in this manner. This method has been found to be especially useful for preparing solutions of exfoliated graphene and certain drugs.
US08715717B2	Composition for animal consumption This invention is directed generally to compositions (including foods, supplements, treats, toys, etc.) for animal consumption, particularly compositions that tend to aid in weight loss or reduction in weight gain, and particularly compositions that comprise one or more medium chain fatty acid triglycerides (“MCT”). This invention also is directed generally to methods for using such compositions. This invention is further directed generally to processes for making such compositions.
US08715715B2	Dosage form for insertion into the mouth Oral dosage forms as a biodegradable, water soluble film for delivering pharmaceutically active agents, particularly anti-migraine agents to patients through insertion into the mouth of patient and methods for administering pharmaceutically active agents to patients by insertion into the mouth to provide selective uptake of said agents through the mucosa and thus avoiding the gastrointestinal tract.
US08715713B2	Solvent cast film sustained release latanoprost implant The present invention provides a sustained release latanoprost implant in the form of a thin film comprising latanoprost incorporated in a biodegradable polymer matrix. Preferably, said implant is an intraocular implant comprising a thin film comprising latanoprost incorporated in a biodegradable polymer matrix wherein said implant is configured as a disc or a rolled film that can be inserted into the eye and unrolls to provide a film having a high surface area to volume ratio.
US08715711B2	Long-acting injectable moxidectin formulations and novel moxidectin crystal forms This invention provides for novel antiparasitic and pesticidal forms of moxidectin, including a long-acting polymeric implant. The resulting compounds may be used in veterinary compositions which are used in treating, controlling and preventing of endo- and ectoparasite infections in animals.
US08715703B2	Method for the extemporaneous preparation of cosmetic compositions having the texture of a cream and compositions for carrying out said method Disclosed is a method for the preparation of cosmetic compositions having the texture of a cream. Said preparation is made at the time when the composition is used and includes bringing into contact with each other (A) a liquid phase, (B) a powder containing a gelling agent for the liquid phase (A), and (C) an active cosmetic ingredient, whereby the elements are brought into contact by adding phase (A) to phase (B), subjecting a solid powder containing phase (B) and phase (A) in an immobilized form to mechanical stress to release phase (A). Further disclosed are compositions comprising phase (B) and phase (A) in an immobilized form (which are transformed into a cream when applied to the skin).
US08715698B2	Truncated secretory aspartyl proteinase 2 The present invention relates to an isolated truncated form of the secretory aspartyl proteinase 2, as well as to nucleic acid molecules encoding same. The present invention also relates to a composition comprising an isolated truncated form of the secretory aspartyl proteinase 2, as well as to nucleic acid molecules encoding same.
US08715696B2	Full genome DNA of human cytomegalovirus strain JHC isolated from Korean patient and open reading frames thereof Provided are a full genome DNA of a human cytomegalovirus (HCMV) strain JHC isolated from Korean patients and open reading frames (ORFs) thereof and, more particularly, UL1, UL119 and RL6.
US08715695B2	Polypeptide fragments of the hepatitis E virus, the vaccine composition comprising said fragments and the diagnostic kits The present invention relates to polypeptide(s) comprising the amino acid sequence as set forth in SEQ ID No. 1 of hepatitis E virus ORF 2 or its fragment, which is in the form of n-polymeric polypeptide, wherein n is an integer from 1-180; to a chimeric protein consisting of a polypeptide of the present invention and a conserved fragment of hemagglutin antigen from influenza virus; to a polypeptide of the present invention bound to a polypeptide containing epitope from hepatitis E virus ORF3 or an immunogenic fragment thereof; to a recombinant expression vector comprising the DNA molecule encoding the above polypeptides and the host cell transformed with said recombinant expression vector which is able to express polypeptide of the present invention. The present invention further relates to a vaccine composition against hepatitis E virus which comprises the above-mentioned polypeptide, or diagnostic kit for hepatitis E virus infection comprising the above-mentioned polypeptide, which includes IgG, IgM, or total antibody diagnostic kit for hepatitis E virus, and to the use of vaccine composition and diagnostic kit for prophylaxis, diagnosis and/or treatment of hepatitis E virus infection.
US08715694B2	Recombinant dengue virus antigen comprising the capsid protein leader sequence, full-length prM protein, and full-length E protein The invention provides polypeptides and virus-like particles having, for example, an ability to induce an immune response to flaviviruses. The polypeptides can include C15, prM, and E polypeptide sequences.
US08715690B2	Circovirus sequences associated with piglet weight loss disease (PWD) The genome sequences and the nucleotide sequences coding for the PWD circovirus polypeptides, such as the circovirus structural and non-structural polypeptides, vectors including the sequences, and cells and animals transformed by the vectors are provided. Methods for detecting the nucleic acids or polypeptides, and kits for diagnosing infection by a PWD circovirus, also are provided. Method for selecting compounds capable of modulating the viral infection is further provided. Pharmaceutical, including vaccines, compositions for preventing and/or treating viral infections caused by PWD circovirus and the use of vectors for preventing and/or treating diseases also are provided.
US08715683B2	RANK ligand polypeptides Described herein are cell lines and methods for preparing antibodies that bind RANKL, including cell lines that produce blocking antibodies to human RANKL.
US08715680B2	HLA peptide therapy The invention provides polypeptides derived from a major histocompatibility complex (MHC) class I human leukocyte antigen (HLA), such as HLA-A2, and derivatives or analogues thereof. The polypeptides, derivatives and analogues can be used to treat or prevent allosensitisation, such as the treatment or prevention of allograft rejection.
US08715675B2	Vascular targets for detecting, imaging and treating neoplasia or neovasculature Methods of delivering an agent in a tissue-specific manner, by targeting annexin A1, a derivative of annexin A1, or a binding partner of annexin A1, are described. The methods can be used for detecting, imaging and/or treating neoplasia, angiogenesis or neovasculature, as well as for diagnostics and methods of assessing treatment efficacy. Antibodies to annexin A1 are also described, as are methods screening for agents altering annexin A1 activity.
US08715673B2	Staphylococcus aureus specific antibodies and uses thereof The present invention provides antagonizing antibodies that bind to S. aureus alpha-toxin. The invention further provides a method of obtaining such antibodies and antibody encoding nucleic acids. The invention further relates to therapeutic methods for use of these antibodies for the treatment and/or prevention of staphylococcal disease, including, for example, pneumonia, bacteremia, sepsis, eye infection, and abscess.
US08715668B2	Antibody selective for a tumor necrosis factor-related apoptosis-inducing ligand receptor DR5 and uses thereof An antibody of the invention interacts with human DR5 to produce agonistic or antagonistic effects downstream of the receptor including inhibition of cell proliferation and apoptosis. Nucleic acid sequences and amino acid sequences of anti-DR5 antibodies have been elucidated and vectors and cells containing and expressing these sequences have been generated. Methods and uses for the antibodies are detailed including treatment of apoptosis-related disease and treatment of dysregulated cell growth.
US08715666B2	Method for the potentiation of opioid analgesics effects on pain According to the invention there is provided use of an anti-TrkA antibody capable of inhibiting the binding between NGF and TrkA combined with at least one opioid analgesic for the preparation of a medicament for treating and/or preventing pain.
US08715664B2	Use of human TNFα antibodies for treatment of erosive polyarthritis The invention describes methods of treating erosive polyarthritis comprising administering a TNFα antibody, or antigen-binding portion thereof. The invention also describes a method for testing the efficacy of a TNFα antibody, or antigen-binding portion thereof, for the treatment of erosive polyarthritis.
US08715663B2	Epitopes Compositions and methods relating to epitopes of sclerostin protein, and sclerostin binding agents, such as antibodies capable of binding to sclerostin, are provided.
US08715661B2	Methods and compositions for increasing arylsulfatase A activity in the CNS Provided herein are methods and compositions for treating a subject suffering from a deficiency in arylsulfatase A in the CNS. The methods include systemic administration of a bifunctional fusion antibody comprising an antibody to a human insulin receptor and an arylsulfatase A.
US08715654B2	Methods of modulating the negative chemotaxis of immune cells The current invention is directed to methods of inducing migration of an immune cell toward a cancer cell comprising inhibiting the activity of a chemorepellant released from the cancer cell.
US08715652B2	Immunoglobulin preparations having increased stability The present invention relates to a protein preparation having increased stability, comprising a stabiliser selected from the group consisting of non-polar and basic amino acids and having a pH of 4.0 to 5.2. The invention further relates to a pharmaceutical composition and a method of stabilising protein preparations.
US08715649B2	Compositions and methods of use for alpha-1 antitrypsin having no significant serine protease inhibitor activity Embodiments herein illustrate methods and compositions for treating medical disorders. In certain embodiments, compositions and methods relate to reducing, inhibiting or treating graft rejection, transplant rejection or diabetes in a subject. Other embodiments herein relate to compounds including naturally occurring and synthetic mutant compositions of alpha-1 antitrypsin, wherein the alpha-1 antitrypsin has no significant serine protease inhibitor activity.
US08715648B2	Method for treating obesity with anti-obesity formulations and omega 3 fatty acids for the reduction of body weight in cardiovascular disease patients (CVD) and diabetics Combinations of one or more anti-obesity drugs with mixtures of an omega-3 fatty acid formulation containing about 90% or more omega 3 fatty acids by weight comprised of a combination of Eicosapentaenoic acid (EPA), Docosapentaenoic acid (DPA) and Docosahexaenoic acid (DHA) in a weight ratio of EPA:DHA of from 5.7 to 6.3, wherein the sum of the EPA, DHA and DPA comprise about 82% by weight of the total formulation and about 92% of the total omega 3 fatty acid content of the composition for the reduction of body weight in cardiovascular disease patients (CVD) and diabetics.
US08715647B2	Enzyme feed additive and animal feed including it The use is provided composition as a feed additive which comprises one or more endoglucanases, and 0-20% by weight, based upon the content of cellulase proteins in the composition, of a cellobiohydrolase. The endoglycanases may be one or more of EGI, EGII, EGIII and any functionally active derivative of any thereof. Such endoglucanases may be obtained from a genetically modified strain of the fungus Trichoderma. Also provided is an enzyme-based feed additive which comprises EGI and/or EGII which lack the cellulose binding domain, and 0-20% by weight, based upon the content of cellulase proteins in the additive, of a cellobiohydrolase. A further enzyme-based feed additive is provided which comprises a cereal-based carrier, one or more endoglucanases, and 0-20% by weight, based upon the content of cellulase proteins in the additive, of a cellobiohydrolase.
US08715635B2	Frictionless molecular rotary motors A rotaxane consisting of a cucurbituril and an uncharged guest molecule, having low or null affinity therebetween is provided as well as processes for providing the same. Various uses as energy converters (“frictionless” molecular motors), biochips and biosensors using the same are also provided.
US08715631B2	Cosmetic microemulsion The present invention relates to a cosmetic microemulsion comprising a non-ionic surfactant type emulsifying agent, a co-emulsifying agent and a solvent selected from the group consisting of hexadecane and isomers thereof and dodecane and isomers thereof, said cosmetic microemulsions having particle diameter smaller than 100 nm. Preferably, this cosmetic microemulsion is used in the form of a pre-shampoo and has particles with a diameter on the order of 40 nm.
US08715628B1	Cosmetic compositions and methods for inhibiting or reducing trypsin activity A cosmetic composition formulated for topical application to skin is provided. The composition includes a safe and effective amount of cyclohexane-1,2,3,4,5,6-hexol; a safe and effective amount of an N-acyl amino acid compound; and a dematologically acceptable vehicle.
US08715623B2	Pulmonary delivery of aminoglycoside A dispersible powder composition comprises aminoglycoside for delivery to the lungs. The composition is effective to provide a therapeutically effective therapy via administration of less than 6 respirable unit doses by inhalation, wherein each unit dose comprises a volume of 0.30 to 0.95 mL.
US08715622B2	Echogenic polymer microcapsules and nanocapsules and methods for production and use thereof Methods for producing echogenic polymer microcapsules and nanocapsules for use in diagnostic imaging and delivery of bioactive compounds as well as targeted imaging and delivery to selected tissues and cells are provided. Compositions containing these echogenic polymer microcapsules and nanocapsules for use in diagnostic imaging and delivery of bioactive agents are also provided.
US08715619B2	Compositions and methods for treating haematological proliferative disorders of myeloid origin The disclosure relates to methods and compositions effective in the diagnosis, prognosis and treatment of human hematopoietic cancers. In particular, the disclosure provides tumor-associated genes that encode for cytokine receptors that are differentially expressed in hematopoietic tumor cells of myeloid origin compared with other cells, e.g., normal stem cells.
US08715618B2	Process for the direct synthesis of Cu containing zeolites having CHA structure A process for the preparation of a copper containing zeolitic material having CHA framework structure and a composition comprising the molar ratio (n YO2):X203 wherein X is a trivalent element, preferably Al, Y is a tetravalent element, preferably Si, and wherein n is preferably at least 20. The process comprising the preparation of an phosphor-free aqueous solution containing at least one source for X203 and at least one source for YO2, at least one structure directing agent suitable for the preparation of a zeolitic material having CHA framework structure, and at least one Cu source, and the process further comprising the hydrothermal crystallization of said aqueous solution obtaining a suspension containing the copper containing zeolitic material having CHA framework structure.
US08715612B2	Process for preparing zinc peroxide nanoparticles Zinc peroxide nanoparticles, used for arsenic and chromium removal, were synthesized using zinc acetate di-hydrate as precursors in ammonical water medium at room temperature.
US08715608B2	Growth of single-walled carbon nanotubes A method for synthesizing carbon nanotubes having a narrow distribution of diameter and/or chirality is presented. The method comprises providing catalyst particles to a reactor for synthesizing the carbon nanotubes, wherein the catalyst particles are characterized by a narrow distribution of catalyst-particle diameters and a narrow distribution of catalyst-particle compositions. Preferably, the catalyst particles are characterized by a mean catalyst-particle diameter of 2.6 nm or less and a composition of NixFe1-x, wherein x is less than or equal to 0.5.
US08715600B1	Circulating dry scrubber A circulating dry scrubber flue gas desulfurization system is disclosed. Hydrated lime is injected into the flue gas upstream of the CDS vessel. The flue gas then passes through a baghouse, where solids are captured. At least a portion of the solids are recycled. The recycle path runs from the baghouse to a splitter, where the solids are divided between the injection points. No distribution box is needed, which permits lowering the height and/or restructuring the location of many components of the system, reducing costs as well as improving or maintaining removal of combustion byproducts from the flue gas.
US08715599B2	Sorbent formulation for removal of mercury from flue gas Methods and systems for reducing mercury emissions from fluid streams are provided herein. In embodiments, mercury is removed from flue gas streams by injecting a dry admixture of a porous mercury adsorptive material and at least one halide containing agent into the flue gas stream.

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