专利汇可以提供Method for growing single crystal专利检索,专利查询,专利分析的服务。并且PURPOSE:To grow a single crystal having uniform oxygen concentration by Czochralski process, by enlarging the diameter of the single crystal gradually in the course of the crystal pulling process, thereby decreasing the surface area of the molten liquid. CONSTITUTION:In the growing of a single crystal by Czochralski process using a crucible 1 made of an oxide such as quartz, the oxygen in the crucible material is diffused into the single crystal 4, and its amount decreases with the increase in the solidification ratio, because the convective stirring action of the molten liquid 2 decreases according to the decrease in the molten liquid 2 in the crucible 1 by the progress of solidification, resulting in the decrease of the oxygen supply from the crucible material 1. The decrease of the oxygen supply from the crucible material is compensated by enlarging the diameter of the pulling single crystal 4 gradually according to the progress of solidification, thereby decreasing the surface area of the molten liquid 2 and suppressing the dissipation of oxygen from the surface of the molten liquid. A single crystal having uniform oxygen concentration along the pulling direction can be produced by this process.,下面是Method for growing single crystal专利的具体信息内容。
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